CN101569958B - Method for processing ITO membrane and electric device - Google Patents
Method for processing ITO membrane and electric device Download PDFInfo
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- CN101569958B CN101569958B CN 200910105852 CN200910105852A CN101569958B CN 101569958 B CN101569958 B CN 101569958B CN 200910105852 CN200910105852 CN 200910105852 CN 200910105852 A CN200910105852 A CN 200910105852A CN 101569958 B CN101569958 B CN 101569958B
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Abstract
The invention relates to a method for processing ITO membrane, comprising the followings steps: a substrate attached with the ITO membrane is placed on a processing table, the ITO membrane faces the processing table and clearance is arranged between the ITO membrane and the processing table; laser is transmitted from one side where the substrate is located to process the ITO membrane. As laser processing is adopted, no chemical medicine is needed, thus avoiding polluting the environment; in addition, the purpose of rapid preparation of the membrane can be realized so long as the ITO membrane is processed by the laser technology; furthermore, the invention also provides an electric device containing transparent electrodes prepared by the method for processing the ITO membrane.
Description
[technical field]
The present invention relates to the processing technology field of nesa coating, especially the processing method of ITO film and the electronic equipment that adopts the processing method of this ITO film to make.
[background technology]
Tin-doped indium oxide (Indium Tin Oxide, abbreviation ITO) material is a kind of N-shaped semi-conducting material, owing to have high conductance, high visible light transmissivity, high mechanical hardness and chemical stability, so it being the most frequently used material of transparency electrode of liquid crystal display (LCD), plasma display (PDP), electroluminescent display (EL/OLED), touch-screen (Touch Panel), solar cell and other electronic instrument.According to different application, the ITO film need to be processed to different shapes.
The processing of traditional ITO film generally adopts mask and chemicals to carry out etching method, can have some problems in this process:
1) cost with high investment;
2) need more step to process, consuming time dumb;
3) owing to needing to use chemicals, can be to environment.
Therefore some drawbacks that exist for traditional diamond-making technique need to improve, and adopt brand-new processing mode to process.
[summary of the invention]
In view of this, be necessary to provide a kind of processing method of avoiding the ITO film of environment.
A kind of processing method of ITO film may further comprise the steps: will be placed on the substrate of ITO film on the processing table top, described ITO film arranges the gap towards described table top and between ITO film and described table top; The height in described gap is 4-6mm; From a side Emission Lasers at described substrate place described ITO film is processed; In described gap location dust suction, offer through hole at table top, through hole is communicated with the gap and reach the effect of dust suction in the through hole exhausting; The wavelength of described laser is 100-400nm, and the pulse frequency of laser is 120-150KHz, and the pulse width of laser is 3us, and the power of laser is 1.5-2.0W, and the switch time-delay of laser is 20-80us, and the cutting speed of laser is 180-250mm/s.
Preferably, the wavelength of described laser is 355nm.
Preferably, the pulse frequency of described laser is 150KHz.
Preferably, the pulse width of described laser is 3us.
Preferably, the power of described laser is 1.5W.
Preferably, the switch of described laser time-delay 50us.
Preferably, the cutting speed of described laser is 200mm/s.
In addition, also provide a kind of electronic equipment that comprises the transparency electrode of the processing method preparation of adopting above-mentioned ITO film.
Adopt the method for Laser Processing, do not need to use chemicals, can avoid environment, and adopt laser technology to carry out the processing of ITO film and just can realize the fast purpose of manufacturing.
[description of drawings]
Fig. 1 is the schematic diagram of Laser Processing ITO film.
[specific embodiment]
In the following embodiments, adopt the method for Laser Processing, do not need to use chemicals, avoid environment.
In conjunction with consulting Fig. 1, a kind of processing method of ITO film may further comprise the steps: will be placed on the substrate 20 of ITO film 10 on the processing table top 30, ITO film 10 arranges gap 40 towards table top 30 and between ITO film 10 and table top 30; Process from 50 pairs of ITO films 10 of a side Emission Lasers at substrate 20 places.
Between ITO film 10 and table top 30, gap 40 is set, for example by tool substrate 20 is padded up to make between table top 30 and the ITO film 10 and maintain a certain distance, be convenient in the process of Laser Processing in the gap location dust suction.Such as offering through hole at table top 30, through hole is communicated with the gap and reach the effect of dust suction in the through hole exhausting, thereby avoid ITO film 10 dirty.In the present embodiment, the height in gap is 4-6mm.
ITO film 10 is processed from 50 pairs of ITO films 10 of a side Emission Lasers at substrate 20 places towards table top 30, and the purpose that arranges like this can avoid laser 50 to hurt substrate of glass 20.Through test when ITO film 10 dorsad table top 30 place and add man-hour act on laser machine table top 30 because laser 50 can pass ITO film 10 and see through substrate of glass 20, the heat of generation can hurt substrate of glass 20.When ITO film 10 adds man-hour towards table top 30 placements, because laser 50 can see through substrate of glass 20 and can not have an effect with substrate of glass 20, so just can not hurt substrate of glass 20, laser 50 can direct effect to ITO film 10, even if a small amount of laser 50 sees through behind substrate of glass 20 and the ITO film 10 and laser machine table top 30 is done the time spent, because ITO film 10 maintains a certain distance with table top 30, be convenient to the diffusion of heat and flue dust, can stained ITO film 10.And by dust suction, need not to clean the surface of ITO film 10, enhance productivity.
ITO a kind ofly widely can be with thin-film material, and its band gap is 3.5-4.3ev.Ultraviolet region produce the forbidden band to have encouraged the absorption threshold value be 3.75ev, be equivalent to the wavelength of 330nm, so the light transmittance of ultraviolet region ito thin film is extremely low.But the transmitance of visible region ito thin film is very good.Adopt Ultra-Violet Laser that ito thin film is processed and used just it in the extremely low principle of the transmitance of ultraviolet region, ito thin film is higher to the absorptivity of ultraviolet light, thereby can carry out figure processing to it easily.In the present embodiment, the wavelength of laser is 100-400nm, is preferably 355nm; The pulse frequency of laser is 120-150KHz, is preferably 150KHz; The pulse width of laser is 3us; The power of laser is 1.5-2.0W, is preferably 1.5W; The switch time-delay of laser is preferably 50us for 20-80us; The cutting speed of laser is 180-250mm/s, is preferably 200mm/s.The switch time-delay of laser is one of important parameter of controlled working figure Origin And Destination quality, laser head moves to another point from any to be had an acceleration, decelerates to stable process, the needed time of this process is exactly the time of laser switch time-delay, the control laser head reach delay first before stable luminous, after stable again bright dipping process, can reach better processing effect.In the above-mentioned many kinds of parameters, can set as required concrete value, also can only select to set one or more parameters wherein.Select above-mentioned parameter to process, machining locus is evenly smoothly suitable without burr, the depth.
Because it is very fast that electronic equipment market changes, the replacing time of new product model is fast, so that people need a kind of general technology that computer design is directly changed into processing and manufacturing, and adopt laser technology to carry out the purpose that the processing of ITO film just can realize making fast ITO film transparency electrode.Correspondingly, also reduced in the electronic equipment manufacturing process that comprises this transparency electrode pollution to environment.Programmed process is carried out in required graphics processing, the input computerized control system, the substrate that is provided with the ITO film is placed on can be by laser machine according to the figure processing that arranges on the processing table top of laser machine.Laser Processing can be in glass, PET substrate be carried out various patterns on a large scale on the ito thin film, the precision of various sizes, High-speed machining, and can guarantee very high production capacity, have the characteristics of reliable, stable and high performance price ratio.Use Laser Processing also to have quick material removing rate, do not have fuel factor, can show in real time cutting track, characteristics simple to operate.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (7)
1. the processing method of an ITO film is characterized in that, may further comprise the steps:
To be placed on the substrate of ITO film on the processing table top, described ITO film arranges the gap towards described table top and between ITO film and described table top;
The height in described gap is 4-6mm;
From a side Emission Lasers at described substrate place described ITO film is processed;
In described gap location dust suction, offer through hole at table top, through hole is communicated with the gap and reach the effect of dust suction in the through hole exhausting;
The wavelength of described laser is 100-400nm, and the pulse frequency of laser is 120-150KHz, and the pulse width of laser is 3us, and the power of laser is 1.5-2.0W, and the switch time-delay of laser is 20-80us, and the cutting speed of laser is 180-250mm/s.
2. the processing method of ITO film according to claim 1 is characterized in that, the wavelength of described laser is 355nm.
3. the processing method of ITO film according to claim 1 is characterized in that, the pulse frequency of described laser is 150KHz.
4. the processing method of ITO film according to claim 1 is characterized in that, the power of described laser is 1.5W.
5. the processing method of ITO film according to claim 1 is characterized in that, the switch time-delay 50us of described laser.
6. the processing method of ITO film according to claim 1 is characterized in that, the cutting speed of described laser is 200mm/s.
7. electronic equipment that comprises the transparency electrode of the processing method preparation of adopting the described ITO film of any one in the claim 1 to 6.
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| CN 200910105852 CN101569958B (en) | 2009-03-06 | 2009-03-06 | Method for processing ITO membrane and electric device |
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| CN101569958B true CN101569958B (en) | 2013-01-23 |
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| CN103309526B (en) * | 2012-03-14 | 2016-08-03 | 深圳欧菲光科技股份有限公司 | The manufacture method of narrow circuit |
| CN104708212A (en) * | 2015-02-13 | 2015-06-17 | 黄石瑞视光电技术股份有限公司 | Laser cutting method for resistive touch screen ITO film base material |
| CN109590288B (en) * | 2018-11-28 | 2021-06-04 | 四川大学 | Method for cleaning impurities on transmission surface of light-transmitting medium by laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1992443A1 (en) * | 2006-12-22 | 2008-11-19 | Panasonic Corporation | Laser processing apparatus and laser processing method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1992443A1 (en) * | 2006-12-22 | 2008-11-19 | Panasonic Corporation | Laser processing apparatus and laser processing method using the same |
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| JP特开2000-52071A 2000.02.22 |
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Address after: No. 5 road 518000 in Guangdong province Shenzhen city Nanshan District high tech park of Pine Hill Factory District No. 8 Building Room 606 Co-patentee after: HAN'S CNC SCIENCE AND TECHNOLOGY Co.,Ltd. Patentee after: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd. Address before: No. 5 road 518000 in Guangdong province Shenzhen city Nanshan District high tech park of Pine Hill Factory District No. 8 Building Room 606 Co-patentee before: HAN'S CNC SCIENCE AND TECHNOLOGY Co.,Ltd. Patentee before: Han's Laser Technology Co.,Ltd. |
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Effective date of registration: 20200611 Address after: 518101 workshop 5 / F, 1 / 2 / F, 14 / F, 17 / F, antuoshan hi tech Industrial Park, Xinsha Road, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: HAN'S CNC SCIENCE AND TECHNOLOGY Co.,Ltd. Address before: No. 5 road 518000 in Guangdong province Shenzhen city Nanshan District high tech park of Pine Hill Factory District No. 8 Building Room 606 Co-patentee before: HAN'S CNC SCIENCE AND TECHNOLOGY Co.,Ltd. Patentee before: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd. |
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Address after: 518101 5 / F, 1 / 2 / F, 14 / F, 17 / F, No.3 Factory building, antuoshan hi tech Industrial Park, Xinsha Road, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Han's CNC Technology Co.,Ltd. Address before: 518101 5 / F, 1 / 2 / F, 14 / F, 17 / F, No.3 Factory building, antuoshan hi tech Industrial Park, Xinsha Road, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: HAN'S CNC SCIENCE AND TECHNOLOGY Co.,Ltd. |