CN101567521A - Method for growing controllable quantum dots and quantum rings - Google Patents

Method for growing controllable quantum dots and quantum rings Download PDF

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CN101567521A
CN101567521A CNA2008101047616A CN200810104761A CN101567521A CN 101567521 A CN101567521 A CN 101567521A CN A2008101047616 A CNA2008101047616 A CN A2008101047616A CN 200810104761 A CN200810104761 A CN 200810104761A CN 101567521 A CN101567521 A CN 101567521A
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quantum
substrate
density
rings
quantum dot
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CN101567521B (en
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赵暕
陈涌海
王占国
徐波
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a method for growing controllable quantum dots and quantum rings, which comprises the steps: preparing a mu m-magnitude photolithography plate containing bar-shaped regions, square hole areas and round hole areas; performing ordinary photoetching on a patterned substrate of the photolithography plate; preparing the patterned substrate through wet etching; and adopting certain growth conditions and a molecular beam epitaxial (MBE) growth method of deposition amount to grow a quantum dot and quantum ring structure of which the density of the quantum dots is gradually smaller, the density of the quantum rings is gradually larger and the positions are controllable on the same substrate slice. The method is utilized to prepare the patterned substrates with different morphologies on different regions on the same substrate under same growth conditions by introducing a substrate treatment mode of the patterned substrates, thereby ensuring the morphologies and distribution of the quantum dots or the quantum rings formed on the plane are changed, and realizing the modulation of the density and distribution positions of the quantum dots and the quantum rings.

Description

The method of a kind of growing controllable quantum dots and Quantum Rings
Technical field
The present invention relates to the semiconductor material growing technical field, relate in particular to the method for a kind of drop extension in conjunction with graph substrate growth InAs/GaAs controllable quantum dots and Quantum Rings.
Background technology
Low micro-nanometer structural material is being handled such as quantum information, and there is application more and more widely aspects such as quantum cryptography communication, and many quantum devices that have very much a practical value such as unimolecule light source are based on all that controllable growth to quantum dot just can be achieved.The growth of present low micro-nanometer structural material comprises molecular beam epitaxy (MBE) growing technology, metal organic chemical vapor deposition (mocvd) technology (MOCVD) or the like, wherein strain self assembly (SK) growing technology based on molecular beam epitaxy (MBE) growing technology is a growing technology comparatively commonly used
That InAs quantum dot among the GaAs has become is selected by most of MBE system, growth rhythm and the relatively ripe typical material system of growing technology, and the InAs/GaAs quantum dot laser also is maximum, the most ripe laser of research.The strain self assembly quantum dot of usefulness individual layers such as Kirstatedter in 1994 is that luminescent active region has at first been developed the quantum dot laser of continuous operation under the low temperature.In the last few years, the power output of quantum dot laser is also improving constantly, semi-conducting material science key lab of Semiconductor institute, Chinese Academy of Sciences is also making outstanding work aspect the research of InAs/GaAs quantum dot laser, the threshold current density of the 980nm quantum dot laser of development is 218A/cm 2, maximum room temperature continuous power output has reached 3.6W, and working life surpasses 4000h during 1W output.
But the SK growing technology has the difficult control of quantum dot density, and require for lattice mismatch very high, the shortcoming of the substrate epitaxial (as GaAs/AlGaAs) of the lattice match that can't be used to grow.
Drop extension (droplet epitaxy) is a kind of newer growth technology, is proposed by people such as Japanese scientist Nobuyuki Koguchi in 1991.The main growing principle of drop extension is that the extension V group element reacts with it after the drop of III family element of growing at first separately, is basic crystallization with the drop that has formed, and finally forms the quantum dot of III-V group element compound.Quantum Dots Growth technology as a kind of novelty, drop epitaxial growth mode is except relatively easy to control aspect the grown quantum dot density, can grow in outside the substrate epitaxial of lattice match, can also form the quantum structure that characteristics are much arranged very much, Quantum Rings is exactly one of them.The formation of Quantum Rings, and make it become the ideal of making various new units to the controllability of its energy level, impact strength, polarizability, magnetic field intensity one of to select.
In the last few years, a lot of research groups tested and studied drop extensional mode growth quantum point and Quantum Rings, and had tentatively drawn certain conclusion.But, still there is not very complete conclusion for the formation mechanism of quanta ring structure, temperature, factors such as deposition, especially substrat structure are still also unclear to the influence of growth result.
The method of using the subring of SK self-organizing growth mode preparation amount is also arranged both at home and abroad, but that need be after self-organized quantum dot growth be finished regrowth one deck cap rock and high annealing in addition, the introducing of cap rock has influenced the application of quanta point material, and has no idea to prepare simultaneously on same sample the structure of quantum dot Quantum Rings coexistence.
Graph substrate is that the predetermined depression or the structure of protuberance appear in a kind of aufwuchsplate that is the plane by the feasible script of a series of processes such as plate-making, whirl coating, photoetching, corrosion, thereby influences growth result.Up to the present, the preparation method in conjunction with the graph substrate of SK growth pattern is arranged, but any research report that graph substrate is directly applied to drop epitaxial growth mode is not arranged as yet.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide the method for a kind of growing controllable quantum dots or Quantum Rings, by introducing the substrate processing mode of graph substrate, prepare the graph substrate of different-shape in different zone under the same growth conditions, on the same substrate, make the quantum dot of formation in the plane or the pattern and the distribution of Quantum Rings change, realize modulation quantum dot and Quantum Rings density and distributing position.
(2) technical scheme
For achieving the above object, the technical solution used in the present invention is such:
The method of a kind of growing controllable quantum dots and Quantum Rings, this method comprises:
The photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of preparation μ m magnitude;
This photolithography plate graph substrate is carried out common photoetching;
Wet etching prepares graph substrate;
Adopt the molecular beam epitaxy MBE growing method of certain growth conditions and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable.
Preferably, the photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of described preparation μ m magnitude uses L-edit software to draw, and adopts the mode of electron beam exposure to be prepared; Described bar-shaped zone comprises 1 μ m bar-shaped zone and 2 μ m bar-shaped zones, and wherein, the spacing of 1 μ m bar-shaped zone Zhong Gou and ditch is respectively 1 μ m, 2 μ m, 3 μ m, 4 μ m, and the spacing of 2 μ m bar-shaped zone Zhong Gou and ditch is respectively 2 μ m, 3 μ m, 4 μ m, 5 μ m; Described square hole zone is 1 μ m length of side square hole zone, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively; Described circular hole zone is 1 μ m diameter circle bore region, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively.
Preferably, described the photolithography plate graph substrate is carried out common photoetching, specifically comprises:
Use the washed with de-ionized water substrate slice;
Substrate slice is inserted experiment cup, add acetone soln, heating is treated that acetone seethes with excitement to pour out in back 5 minutes, repeats 3 times;
The adding ethanolic solution is heated to boiling and pours out after 5 minutes, repeats 3 times;
With washed with de-ionized water substrate slice 20 times;
Dry up substrate slice with nitrogen, put into baking oven with 120 ℃ of bakings 30 minutes;
Drip the AZ6103 thin photoresist, with 3500 rev/mins of whirl coatings, with the mechanical main shaft of substrate natural cleavage plane alignment light, light intensity 8mW exposed 5 seconds;
With (CH 3) 4NOH 5H 2O and deionized water are deployed into developer solution according to 1: 4 ratio, the egative film that exposed is put into taken out after this developer solution developed 40 seconds, use washed with de-ionized water.
Preferably, described wet etching prepares graph substrate, specifically comprises: under the mixture of ice and water environment, be taken up in order of priority according to 3: 50: 1 volume ratio to add H 3PO 4, H 2O 2, H 2O opens ultrasonicly, and appropriateness is mixed into corrosive liquid, and the GaAs sheet that exposure is finished is put into corrosive liquid and carried out wet etching, and etching time is 40 seconds; Etching time is put into deionized water with the GaAs sheet at once and is cleaned after finishing, and obtains the graph substrate structure of depths 50nm, the shallow 40nm of place.
Preferably, the molecular beam epitaxy MBE growing method of growth conditions that described employing is certain and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable, specifically comprise:
GaAs (100) substrate that possesses 0.5 ° of 1 μ m, 2 μ m ditch type structures and 1 μ m pass structure drift angle is simultaneously put into the Riber-32p molecular beam epitaxy system;
The Mo holder of order placement substrate does not stop rotation with 50 rev/mins speed all the time in the growth overall process, to guarantee that line drops on the substrate uniformly;
In As4 protection gas, substrate is heated to reflection high energy electron diffraction RHEED light and shade occurs and contrast tangible spot image, the substrate deoxidation is finished;
At 580 ℃ of 20nmGaAs resilient coatings of growing down;
Substrate is cooled to 120 ℃, closes As source protection gas;
Open the In source and, close the In source then with the In of 0.1mon/s growth 1.5mon;
The As valve wide open makes the As pressure reach 9.45 * 10 -6Torr also continues 15 minutes;
Rise to 450 ℃ of high annealings 6 minutes;
Sample is taken out in cooling.
Preferably, described quantum dot density is from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable comprise:
Density is 2.04 * 10 8Cm -2, the quantum dot of average height 21.64nm, average diameter radius 141.4nm and Quantum Rings density be 0 structure and
Density is 4 * 10 7Cm -2, average height 6.4nm, average diameter radius 97.8nm quantum dot and density be 2.24 * 10 8Cm -2, average height 26.5764nm, mean outside diameter 222.77nm, average interior diameter 78.75nm quanta ring structure;
Wherein, the density of quantum dot with the formed lateral area of graph substrate increase and reduce gradually, the density of Quantum Rings increases gradually with the minimizing of the formed lateral area of graph substrate.
Described quantum dot and Quantum Rings are all tended to be formed on away from the formed step of graph substrate place, and the density minimum point of quantum dot and Quantum Rings all is near the step of graph substrate formation.
(3) beneficial effect
1, utilizes the present invention, by introducing the substrate processing mode of graph substrate, prepare the graph substrate of different-shape in different zone under the same growth conditions, on the same substrate, make the quantum dot of formation in the plane or the pattern and the distribution of Quantum Rings change, realized modulation quantum dot and Quantum Rings density and distributing position.
2, utilize the present invention, adopt the growth pattern of graph substrate in conjunction with the drop extension, can be under identical growth temperature, under the evenly unified deposition, the zones of different on same GaAs substrate grows high density (2.04 * 10 respectively 8Cm -2) quantum dot (average height 21.64nm average diameter radius 141.4nm) simultaneously Quantum Rings density be 0 structure, and low-density (4 * 10 7Cm -2) quantum dot (average height 6.4nm average diameter radius 97.8nm) possess high density (2.24 * 10 simultaneously 8Cm -2) structure of Quantum Rings (the average interior diameter 78.75nm of average height 26.5764nm mean outside diameter 222.77nm), therebetween the density of quantum dot with the formed lateral area of graph substrate increase and reduce gradually, the density of Quantum Rings increases gradually with the minimizing of the formed lateral area of graph substrate.
3, utilize the present invention, all quantum dots, Quantum Rings are all tended to be formed on away from the formed step of graph substrate place, and the density minimum point of all quantum dot Quantum Rings all is near the step of graph substrate formation.Experimental result is seen accompanying drawing 4, Fig. 5 and Fig. 6.
4, the present invention further meaning is, because the pattern of graph substrate can be realized by using more accurate instrument and preparation method, if therefore the common photoetching in the middle of this experiment changes electron beam exposure into, if etching condition can be realized at the fixing ultra-clean chamber of temperature humidity, in conjunction with to the further trial of experiment condition with to the further appropriate design of graph substrate, can be by graph substrate accurate quantum dot for preparing different-shape and density in same secondary growth, quanta ring structure, this not only can realize not having the experiment purpose or the industrial processes purpose that can't realize under the graph substrate situation, and can save the research and production cost under similar circumstances, possess certain researching value and practical value.
Description of drawings
Fig. 1 is the method flow diagram of growing controllable quantum dots provided by the invention and Quantum Rings;
Fig. 2 is the schematic diagram that utilizes the photolithography plate full figure of L-edit software drafting;
Fig. 3 is the schematic diagram that utilizes photolithography plate 1/4 figure of L-edit software drafting;
Fig. 4 is through No. 1 sample (1 μ m furrow width zones of 2 μ m spacings) the figure a after the epitaxial growth of graph substrate drop, No. 2 samples (the square hole zone of 1 μ m spacing) figure b, No. 3 samples (the circular hole zone of 1 μ m spacing) figure c, No. 4 samples (2 μ m furrow width zones of 2 μ m spacings) figure d, No. 5 samples (3 μ m spacings, 2 μ m furrow width zones) figure e, the AFM photo of No. 6 samples (no graph substrate plane domain) figure f;
Fig. 5 is the quantum dot density of 1 to No. 6 sample shown in Figure 3 and owing to introduces the per 100 μ m of graph substrate 2The schematic diagram of the lateral area that is increased;
Fig. 6 is the distribution map of the quantum dot (ring) of No. 5 samples of InAs (a figure), No. 4 samples (b figure), No. 1 sample (c figure) on the GaAs substrate that is obtained by the experimental result that AFM measures, sample is along equidistantly being divided into 20 parts with the subvertical direction of ditch (x axle) by a length of the cycle, the block diagram correspondence falls into quantum dot (ring) number of respective regions, the height relief of the corresponding respective substrate of black line.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Up to the present, use the Quantum Rings of drop epitaxial growth different-shape and density or method that Quantum Rings is taked to have both at home and abroad: (1) adopts different depositions, and (2) adopt different growth temperatures.
Method (1) be difficult to realize the precise quantification control of same sample zones of different deposition though can accurately control the single deposition of same sample, both has been not easy by relatively the studying of precise information, and does not also possess to drop into to quantize the feasibility of producing.
Method (2) is though can accurately control the single growth temperature of same sample, but be difficult to realize the precise quantification control of same sample zones of different temperature, possess beyond the defective identical with first method, quantum dot that the drop extension forms under different temperatures or quanta ring structure are when pattern changes simultaneously, luminous efficiency or the like optical property also can change, and is unfavorable for practical application.
Graph substrate of the present invention is in conjunction with the growth pattern of drop extension, can be under identical growth temperature, and under the evenly unified deposition, the zones of different on same GaAs substrate grows high density (2.04 * 10 respectively 8Cm -2) quantum dot (average height 21.64nm average diameter radius 141.4nm) simultaneously Quantum Rings density be 0 structure, and low-density (4 * 10 7Cm -2) quantum dot (average height 6.4nm average diameter radius 97.8nm) possess high density (2.24 * 10 simultaneously 8Cm -2) structure of Quantum Rings (the average interior diameter 78.75nm of average height 26.5764nm mean outside diameter 222.77nm), therebetween the density of quantum dot with the formed lateral area of graph substrate increase and reduce gradually, the density of Quantum Rings increases gradually with the minimizing of the formed lateral area of graph substrate.Simultaneously, all quantum dots, Quantum Rings is all tended to be formed on away from the formed step of graph substrate place, and the density minimum point of all quantum dot Quantum Rings all is near the step of graph substrate formation.
Quantum Rings has higher shockproofness as a kind of new nanostructure, higher luminous peak position, quantum dots such as the electronic structure of ring-type incomparable physical characteristic.This makes Quantum Rings in the photoelectric device application facet wide prospect and potential huge applications value more be arranged.Common SK growth pattern can't directly form Quantum Rings, need on the quantum dot that has formed, cap layer annealing could form quanta ring structure with cap rock, though common drop extension can realize the preparation of Quantum Rings by changing deposition, but be difficult in the quantum dot for preparing different proportion on the same sample by accurate control deposition simultaneously, quanta ring structure.
The present invention is by adopting different graph substrate structures on same substrate, be implemented in same growth conditions, the zones of different of same sample is growth quantum point respectively, Quantum Rings, quantum dot and Quantum Rings coexisting region are by changing the variation that graph substrate realizes quantum dot Quantum Rings ratio.And Quantum Rings and the quantum dot nucleation site that has generated had certain modulation function.The new method of further accurate controlled preparation Quantum Rings is provided.
As shown in Figure 1, Fig. 1 is the method flow diagram of growing controllable quantum dots provided by the invention and Quantum Rings, and this method may further comprise the steps:
Step 101: the photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of preparation μ m magnitude;
Step 102: this photolithography plate graph substrate is carried out common photoetching;
Step 103: wet etching prepares graph substrate;
Step 104: adopt the molecular beam epitaxy MBE growing method of certain growth conditions and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable.
In the above-mentioned steps 101, the photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of described preparation μ m magnitude uses L-edit software to draw, and adopts the mode of electron beam exposure to be prepared; Described bar-shaped zone comprises 1 μ m bar-shaped zone and 2 μ m bar-shaped zones, and wherein, the spacing of 1 μ m bar-shaped zone Zhong Gou and ditch is respectively 1 μ m, 2 μ m, 3 μ m, 4 μ m, and the spacing of 2 μ m bar-shaped zone Zhong Gou and ditch is respectively 2 μ m, 3 μ m, 4 μ m, 5 μ m; Described square hole zone is 1 μ m length of side square hole zone, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively; Described circular hole zone is 1 μ m diameter circle bore region, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively.
In the above-mentioned steps 102, described the photolithography plate graph substrate is carried out common photoetching, specifically comprises:
Use the washed with de-ionized water substrate slice;
Substrate slice is inserted experiment cup, add acetone soln, heating is treated that acetone seethes with excitement to pour out in back 5 minutes, repeats 3 times;
The adding ethanolic solution is heated to boiling and pours out after 5 minutes, repeats 3 times;
With washed with de-ionized water substrate slice 20 times;
Dry up substrate slice with nitrogen, put into baking oven with 120 ℃ of bakings 30 minutes;
Drip the AZ6103 thin photoresist, with 3500 rev/mins of whirl coatings, with the mechanical main shaft of substrate natural cleavage plane alignment light, light intensity 8mW exposed 5 seconds;
With (CH 3) 4NOH 5H 2O and deionized water are deployed into developer solution according to 1: 4 ratio, the egative film that exposed is put into taken out after this developer solution developed 40 seconds, use washed with de-ionized water.
In the above-mentioned steps 103, described wet etching prepares graph substrate, specifically comprises: under the mixture of ice and water environment, be taken up in order of priority according to 3: 50: 1 volume ratio to add H 3PO 4, H 2O 2, H 2O opens ultrasonicly, and appropriateness is mixed into corrosive liquid, and the GaAs sheet that exposure is finished is put into corrosive liquid and carried out wet etching, and etching time is 40 seconds; Etching time is put into deionized water with the GaAs sheet at once and is cleaned after finishing, and obtains the graph substrate structure of depths 50nm, the shallow 40nm of place.
In the above-mentioned steps 104, the molecular beam epitaxy MBE growing method of growth conditions that described employing is certain and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable, specifically comprise:
GaAs (100) substrate that possesses 0.5 ° of 1 μ m, 2 μ m ditch type structures and 1 μ m pass structure drift angle is simultaneously put into the Riber-32p molecular beam epitaxy system;
The Mo holder of order placement substrate does not stop rotation with 50 rev/mins speed all the time in the growth overall process, to guarantee that line drops on the substrate uniformly;
In As4 protection gas, substrate is heated to reflection high energy electron diffraction RHEED light and shade occurs and contrast tangible spot image, the substrate deoxidation is finished;
At 580 ℃ of 20nmGaAs resilient coatings of growing down;
Substrate is cooled to 120 ℃, closes As source protection gas;
Open the In source and, close the In source then with the In of 0.1mon/s growth 1.5mon;
The As valve wide open makes the As pressure reach 9.45 * 10 -6Torr also continues 15 minutes;
Rise to 450 ℃ of high annealings 6 minutes;
Sample is taken out in cooling.
Described quantum dot density is from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable comprise:
Density is 2.04 * 10 8Cm -2, the quantum dot of average height 21.64nm, average diameter radius 141.4nm and Quantum Rings density be 0 structure and
Density is 4 * 10 7Cm -2, average height 6.4nm, average diameter radius 97.8nm quantum dot and density be 2.24 * 10 8Cm -2, average height 26.5764nm, mean outside diameter 222.77nm, average interior diameter 78.75nm quanta ring structure etc.
Wherein, the density of quantum dot with the formed lateral area of graph substrate increase and reduce gradually, the density of Quantum Rings increases gradually with the minimizing of the formed lateral area of graph substrate.
Described quantum dot and Quantum Rings are all tended to be formed on away from the formed step of graph substrate place, and the density minimum point of quantum dot and Quantum Rings all is near the step of graph substrate formation.
Further describe below in conjunction with the method for specific embodiment to growing controllable quantum dots provided by the invention and Quantum Rings, this method specifically may further comprise the steps:
Step 1, use L-edit software to draw, adopt the mode of electron beam exposure to prepare the required photolithography plate of photoetching, concrete form is seen Fig. 2 and Fig. 3, wherein Zhong Jian red line is the wide printing opacity intervallum of 500nm, the purpose one of setting intervallum is to be that the crystal orientation is consistent in order to be convenient to make photolithography plate direction and substrate natural cleavage plane in the process of lithography alignment, the 2nd, and in order to be convenient to etching after, the rotational symmetric 4 part cleavage of 2 inches whole plates to be separated.Circle among the figure is exactly the size of 2 inches plates of a standard.
Step 2 is with 2 inches common (100) crystal orientation substrate slices of washed with de-ionized water preparation growth.
Step 3 is inserted experiment cup with substrate slice, adds acetone soln, and heating is treated that acetone seethes with excitement to pour out in back 5 minutes, repeats 3 times.
Step 4, the adding ethanolic solution is heated to boiling and pours out after 5 minutes, repeats 3 times.
Step 5 is used washed with de-ionized water substrate slice 20 times.
Step 6 dries up substrate slice with nitrogen, puts into 120 ℃ of bakings of baking oven 30 minutes.
Step 7 is dripped the AZ6103 thin photoresist, puts into photoresist spinner and gets rid of 3500 commentaries on classics.
Step 8 is put into southern light H94-25C type exposure machine, with the mechanical main shaft of substrate natural cleavage plane alignment light, adjusts light intensity to 6mW, exposes for 5 seconds.
Step 9 is with (CH 3) 4NOH 5H 2O and deionized water are deployed into developer solution according to 1: 4 ratio, the egative film that exposed is put into developer solution take out after 40 seconds, use washed with de-ionized water.
Step 10 is put into beaker in the ultrasonic device under the mixture of ice and water environment, is taken up in order of priority according to 3: 50: 1 volume ratios to add H 3PO 4, H 2O 2, H 2O opens ultrasonicly, and appropriateness is mixed into corrosive liquid, and the GaAs sheet that exposure is finished is put into corrosive liquid and carried out wet etching, and etching time is 40 seconds.Etching time is put into deionized water with the GaAs sheet at once and is cleaned after finishing.
Step 11, the substrate slice that corrosion is finished is 4 along printing opacity intervallum cleavage because 4 graph substrate structures are identical, can after growth in take temporary transient no the storage in the nitrogen cabinet according to the demand of sample.
Step 12 is taken out corresponding GaAs substrate slice according to the required sample number of growth, removes photoresist 10 minutes with 300PLASMA type plasma degumming machine, and the employed gas that removes photoresist is pure oxygen, and throughput is the 300ml/ branch, and the power of resist remover is 100W.
Step 13 added the ultrasonic cleaning substrate slice 10 minutes with acetone, added the ultrasonic cleaning substrate slice 5 minutes with ethanol.
Step 14, with absolute ethyl alcohol=＞acetone=＞trichloroethylene=＞trichloroethylene=＞acetone=＞heated in sequence of absolute ethyl alcohol cleans substrate slice, each step all will be waited until after the solution boiling 5 minutes and finish.
Step 15, repeating step 14 times.
Step 10 six, with the substrate washed with de-ionized water of cleaning, nitrogen dries up, and is taken up in order of priority according to 3: 50: 1 ratios of volume ratio to add H 3PO 4, H 2O 2, H 2O, appropriateness is mixed into corrosive liquid, substrate slice is put into taken out after corrosive liquid corroded for 15 seconds, uses deionized water rinsing 30 times, dries up.
Step 10 seven is pasted In with the substrate slice back side and is bonded in the Mo holder of MBE growth room, sends into Riber-32p molecular beam epitaxy (MBE) system growth room.
Step 10 eight, the preceding growth room degasification of growing is about 24 hours.
Step 10 nine makes Mo holder beginning not stop rotation with 50 rev/mins speed, to guarantee that line drops on the substrate uniformly.Open As4 protection gas to 1 * 10 -5Torr is heated to reflection high energy electron diffraction (RHEED) with substrate and light and shade occurs and contrast tangible spot image, and the substrate deoxidation is finished.
Step 2 ten is opened Ga, As valve, growth 20nmGaAs resilient coating on 580 ℃ substrate.
Step 2 11, substrate are cooled to 120 ℃, close As source protection gas.
Step 2 12 is opened the In source and with the In of 0.1mon/s growth 1.5mon.
Step 2 13 is closed the In source, and the As valve wide open makes the As pressure reach 9.45 * 10 -6Torr also continues 15 minutes.
Step 2 14, substrate were warming up to 450 ℃ of high annealings 6 minutes.
Step 2 15, sample is taken out in cooling.
The place that step 11 should be noted that is, gives in addition mark of rotational symmetric 4 substrate slices before cleavage, generally can partly label in no graph substrate with the Sapphire Substrate sheet, so that contrast corresponding crystal orientation behind growth ending.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1, the method for a kind of growing controllable quantum dots and Quantum Rings is characterized in that, this method comprises:
The photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of preparation μ m magnitude;
This photolithography plate graph substrate is carried out common photoetching;
Wet etching prepares graph substrate;
Adopt the molecular beam epitaxy MBE growing method of certain growth conditions and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable.
2, the method for growing controllable quantum dots according to claim 1 and Quantum Rings, it is characterized in that, the photolithography plate that includes bar-shaped zone, square hole zone and circular hole zone of described preparation μ m magnitude uses L-edit software to draw, and adopts the mode of electron beam exposure to be prepared;
Described bar-shaped zone comprises 1 μ m bar-shaped zone and 2 μ m bar-shaped zones, and wherein, the spacing of 1 μ m bar-shaped zone Zhong Gou and ditch is respectively 1 μ m, 2 μ m, 3 μ m, 4 μ m, and the spacing of 2 μ m bar-shaped zone Zhong Gou and ditch is respectively 2 μ m, 3 μ m, 4 μ m, 5 μ m;
Described square hole zone is 1 μ m length of side square hole zone, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively;
Described circular hole zone is 1 μ m diameter circle bore region, and the line space of Kong Yukong and column pitch are 1 μ m, 2 μ m, 3 μ m, 4 μ m respectively.
3, the method for growing controllable quantum dots according to claim 1 and Quantum Rings is characterized in that, described the photolithography plate graph substrate is carried out common photoetching, specifically comprises:
Use the washed with de-ionized water substrate slice;
Substrate slice is inserted experiment cup, add acetone soln, heating is treated that acetone seethes with excitement to pour out in back 5 minutes, repeats 3 times;
The adding ethanolic solution is heated to boiling and pours out after 5 minutes, repeats 3 times;
With washed with de-ionized water substrate slice 20 times;
Dry up substrate slice with nitrogen, put into baking oven with 120 ℃ of bakings 30 minutes;
Drip the AZ6103 thin photoresist, with 3500 rev/mins of whirl coatings, with the mechanical main shaft of substrate natural cleavage plane alignment light, light intensity 8mW exposed 5 seconds;
With (CH 3) 4NOH 5H 2O and deionized water are deployed into developer solution according to the ratio of 1:4, the egative film that exposed is put into taken out after this developer solution developed 40 seconds, use washed with de-ionized water.
4, the method for growing controllable quantum dots according to claim 1 and Quantum Rings is characterized in that, described wet etching prepares graph substrate, specifically comprises:
Under the mixture of ice and water environment, be taken up in order of priority according to 3: 50: 1 volume ratio to add H 3PO 4, H 2O 2, H 2O opens ultrasonicly, and appropriateness is mixed into corrosive liquid, and the GaAs sheet that exposure is finished is put into corrosive liquid and carried out wet etching, and etching time is 40 seconds; Etching time is put into deionized water with the GaAs sheet at once and is cleaned after finishing, and obtains the graph substrate structure of depths 50nm, the shallow 40nm of place.
5, the method for growing controllable quantum dots according to claim 1 and Quantum Rings, it is characterized in that, the molecular beam epitaxy MBE growing method of growth conditions that described employing is certain and deposition, on same substrate slice, grow quantum dot density from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable, specifically comprise:
GaAs (100) substrate that possesses 0.5 ° of 1 μ m, 2 μ m ditch type structures and 1 μ m pass structure drift angle is simultaneously put into the Riber-32p molecular beam epitaxy system;
The Mo holder of order placement substrate does not stop rotation with 50 rev/mins speed all the time in the growth overall process, to guarantee that line drops on the substrate uniformly;
In As4 protection gas, substrate is heated to reflection high energy electron diffraction RHEED light and shade occurs and contrast tangible spot image, the substrate deoxidation is finished;
At 580 ℃ of 20nmGaAs resilient coatings of growing down;
Substrate is cooled to 120 ℃, closes As source protection gas;
Open the In source and, close the In source then with the In of 0.1mon/s growth 1.5mon;
The As valve wide open makes the As pressure reach 9.45 * 10 -6Torr also continues 15 minutes;
Rise to 450 ℃ of high annealings 6 minutes;
Sample is taken out in cooling.
6, the method for growing controllable quantum dots according to claim 1 and Quantum Rings is characterized in that, described quantum dot density is from high to low, Quantum Rings density changes from low to high and the quantum dot and the quanta ring structure of position-controllable comprise:
Density is 2.04 * 10 8Cm -2, the quantum dot of average height 21.64nm, average diameter radius 141.4nm and Quantum Rings density be 0 structure and
Density is 4 * 10 7Cm -2, average height 6.4nm, average diameter radius 97.8nm quantum dot and density be 2.24 * 10 8Cm -2, average height 26.5764nm, mean outside diameter 222.77nm, average interior diameter 78.75nm quanta ring structure;
Wherein, the density of quantum dot with the formed lateral area of graph substrate increase and reduce gradually, the density of Quantum Rings increases gradually with the minimizing of the formed lateral area of graph substrate.
7, the method for growing controllable quantum dots according to claim 6 and Quantum Rings, it is characterized in that, described quantum dot and Quantum Rings are all tended to be formed on away from the formed step of graph substrate place, and the density minimum point of quantum dot and Quantum Rings all is near the step of graph substrate formation.
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