CN101553547A - 耐热遮蔽带及其用法 - Google Patents

耐热遮蔽带及其用法 Download PDF

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Publication number
CN101553547A
CN101553547A CNA2007800448355A CN200780044835A CN101553547A CN 101553547 A CN101553547 A CN 101553547A CN A2007800448355 A CNA2007800448355 A CN A2007800448355A CN 200780044835 A CN200780044835 A CN 200780044835A CN 101553547 A CN101553547 A CN 101553547A
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China
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methyl
acrylate
heat
rete
heat resistant
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高松赖信
马渡理奈
内田友香
筱原大
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN101553547A publication Critical patent/CN101553547A/zh
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Abstract

本发明提供一种可以容易地剥离而不会留下粘合剂残余的遮蔽带。一种耐热遮蔽带，包括(1)耐热背衬膜层，和(2)压敏粘合剂层，所述压敏粘合剂层设置在所述耐热背衬膜层上，其中所述粘合剂层包括在25℃下溶解度参数(SP)值为20MPa0.5或更小的聚合物。

Description

耐热遮蔽带及其用法
技术领域
本发明涉及耐热遮蔽带及其用法。
背景技术
一般来讲，包括背衬层和背衬层上形成的含有丙烯酸类聚合物作为主要组分的粘合剂层的胶带用于多种目的。丙烯酸类粘合剂一般在耐候性上是优越的，在丙烯酸类粘合剂交联的情况下，其可以具有耐热性。
交联型丙烯酸类粘合剂的实例在美国专利No.3,284,423的说明书中有所公开。这种交联型丙烯酸类粘合剂含有(a)35至75重量％的具有6至15个碳原子的丙烯酸酯，(b)10至60重量％的丙烯酸甲酯或丙烯酸乙酯，(c)0.1至10重量％的酸组分，例如(甲基)丙烯酸、衣康酸或巴豆酸，以及(d)0.1至10重量％的(甲基)丙烯酸缩水甘油酯，并且这种交联型丙烯酸类粘合剂在室温下或加热时自交联。因此，交联型丙烯酸类粘合剂可以既具有内聚力又具有保持力，以及在高温下足够高的粘合力。优选的是，(甲基)丙烯酸缩水甘油酯存在的量为1至3重量％，从而为上述交联型丙烯酸类粘合剂赋予所需的内聚力。
此外，日本专利No.2,955,095公开了一种用于表面保护膜的粘合剂，包含由(甲基)丙烯酸酯单体与含羧酸基团的可共聚单体的共聚化衍生的共聚物，该共聚物由每分子具有两个或多个环氧基团的环氧化合物(例如聚缩水甘油醚或聚缩水甘油胺)交联，其中粘合剂在交联后的10％模量为0.8至4.0kgf/cm2。其描述了粘合剂用于保护树脂板的表面。其还描述了通过调节粘合剂的模量至0.8kg/cm2或更大，其允许具有粘合剂的保护膜从树脂板高速剥离。
美国专利No.3,729,338的说明书公开了一种通过涂布材料制备的自粘合带，其通过在基底材料上向低分子量共聚物中加入少量催化剂和/或多官能化合物并且加热后固化这种材料制备，该低分子量共聚物包含(a)85至99.95重量％的具有4至12个碳原子的丙烯酸烷基酯，以及(b)0.05至15重量份的具有除了双键外一个或多个反应基团的可共聚单体。该文献描述了这种胶带具有好的粘合力和好的耐热性。甲基丙烯酸缩水甘油酯和(甲基)丙烯酸被用作具有反应基团的单体并且将酸(例如辛基膦酸或对-甲苯磺酸)和金属化合物(例如氯化锌或二月桂酸二丁基锡)用作催化剂。
日本未审查专利公布(Kokai)No.2005-53975公开了一种耐热遮蔽带，包括(1)耐热背衬膜层，和(2)设置在耐热背衬膜层上的粘合剂层，其中粘合剂层包含聚合物，该聚合物由聚合并交联包含具有4至15个碳原子的烷基的(甲基)丙烯酸烷基酯、(甲基)丙烯酸缩水甘油酯和(甲基)丙烯酸的单体混合物生成，(甲基)丙烯酸缩水甘油酯存在的量为2至13重量％的单体总重，(甲基)丙烯酸存在的量为1至7重量％的单体总重。具体地讲，丙烯酸正丁酯主要用作(甲基)丙烯酸烷基酯。
然而，当在制造芯片级封装(CSP)的工艺中进行用环氧模塑化合物(EMC)的封装试验(其中上述胶带包含在上述提到的专利文献中描述的粘合剂并且使用引线框)时，在下列不期望的条件下可能出现使用的不方便。假定上述粘合剂没有经受CPS中遇到的高于150℃的温度，因为其在高温下的粘合力不足够。另外，由于粘合剂和EMC之间的高亲和力，在加热时EMC固化的步骤之后，剥离遮蔽带变得困难。难以从EMC中剥离遮蔽带，因此粘合剂残余留在封装上。在这种情况下，清洁封装的步骤变得必要，导致高的制造成本。
发明内容
在用于例如在芯片级封装制造中使用的引线框的遮蔽带等的领域中，需要能够抵抗增加的苛刻条件的胶带。例如，需要这样一种粘合剂遮蔽带，其对于粘附物具有足够的初始粘合力以及可重新定位能力的内聚力，在延长的时间内在高温下热处理时以及等离子处理时具有稳定的粘合强度，并且后来可以容易剥离而没有留下粘合剂残余。本发明的目的是提供满足这些要求的遮蔽带。
在一个实施例中，本发明提供耐热遮蔽带，包括(1)耐热背衬膜层，以及(2)设置在该耐热背衬膜层上的压敏粘合剂层，其中该粘合剂层包含在25℃下溶解度参数(SP)值为20MPa0.5或更小的聚合物。
在另一个实施例中，本发明提供耐热遮蔽带，包括(1)耐热背衬膜层，以及(2)设置在该耐热背衬膜层上的压敏粘合剂层，其中该粘合剂层包含聚合物，该聚合物由包含(甲基)丙烯酸烷基酯、(甲基)丙烯酸、(甲基)丙烯酸缩水甘油酯的聚合单体混合物衍生，其中(甲基)丙烯酸烷基酯的均聚物在25℃下溶解度参数(SP)值为19MPa0.5或更小，其中基于(甲基)丙烯酸烷基酯和(甲基)丙烯酸100重量份的总重量而言，(甲基)丙烯酸烷基酯存在的量为90至99重量份，其中基于(甲基)丙烯酸烷基酯和(甲基)丙烯酸100重量份的总重量而言，(甲基)丙烯酸存在的量为1至10重量份，并且其中基于1摩尔的(甲基)丙烯酸而言，(甲基)丙烯酸缩水甘油酯存在的量为0.25至2.5摩尔。
在另一实施例中，本发明提供用于制备芯片级封装的方法，包括如下步骤：将遮蔽带和引线框层合、在引线框上安装半导体芯片、电连接芯片以及用包覆成型化合物对该封装进行树脂密封，其中遮蔽带是上述耐热遮蔽带，并且包覆成型化合物为环氧模塑化合物(EMC)。
附图说明
图1a-1f示出了方形扁平非引线(QFN)芯片级封装的制造工艺流程图的一个实施例。
具体实施方式
根据本发明的具有粘合剂层的耐热遮蔽带可以是可重新定位的，在施加后具有足够的粘合强度，将不会例如通过加热处理或等离子处理的作用而剥离或增加粘合强度，并且在使用之后可以被剥离而没有残余粘合剂。
当在使用引线框制造芯片级封装(下文称为“CSP”)的方法中用作使用环氧模塑化合物(下文称为“EMC”)的封装的引线框的遮蔽带时，不需要清洁封装的步骤，因为几乎没有任何粘合剂残余留在环氧模塑化合物“EMC”上。
如本文所用，术语“(甲基)丙烯酸酯”是指丙烯酸酯或甲基丙烯酸酯，并且术语“(甲基)丙烯酸类”是指丙烯酸类或甲基丙烯酸类。此外，术语“耐热遮蔽带”广义地理解为涵盖膜、片或带。
现在将通过下列优选实施例来说明本发明的耐热遮蔽带。本领域中的普通技术人员应当理解本发明并不限于具体描述的实施例。
本发明的耐热遮蔽带包括耐热背衬膜层和设置在该耐热背衬膜层上的压敏粘合剂层。粘合剂层设置在耐热背衬膜层的至少一个表面的至少一部分上。耐热背衬膜层支承粘合剂层。耐热背衬膜层可以仅在其一个总表面或部分表面上支承丙烯酸系粘合剂层，或可以在其总表面或部分表面的两侧面上支承粘合剂层。通常，根据在使用时遮蔽带遇到的温度正确选择用于耐热背衬膜层的材料。例如，当处理过程中遇到的温度低于170℃时，可以选择聚对苯二甲酸乙二醇酯(PET)膜作为优选的耐热背衬膜层。当处理温度为170至200℃时，优选的耐热背衬膜层为聚醚酰亚胺、聚醚砜、聚萘二甲酸乙二醇酯或聚苯硫醚的膜。此外，当处理温度为约200℃或更高时，优选的耐热背衬膜层为聚醚醚酮、聚酰胺酰亚胺或聚酰亚胺的膜。特别是考虑可用性和化学稳定性，由于高的灵活性，聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚苯硫醚和聚酰亚胺为优选的。考虑到处理和可用性，耐热背衬膜层的厚度优选为约1至约250μm。
粘合剂层包含在25℃下具有20MPa0.5或更小的溶解度参数(SP)值的聚合物。
粘合剂层包含衍生自单体混合物的共聚和交联的聚合物，所述单体混合物包含：
90至99重量份的(甲基)丙烯酸烷基酯(a)，其中均聚物在25℃下溶解度参数值为19MPa0.5或更小，
1至10重量份的(甲基)丙烯酸(b)，以及
按1摩尔(甲基)丙烯酸(b)计0.25至2.5摩尔的(甲基)丙烯酸缩水甘油酯。该单体混合物中(甲基)丙烯酸烷基酯和(甲基)丙烯酸的总重为100重量份。
当(甲基)丙烯酸酯(其中均聚物在25℃下溶解度参数(SP)值为19MPa0.5或更小)的含量为90至99重量份时，构成粘合剂层的聚合物在25℃下溶解度参数(SP)值为20MPa0.5或更小。另一方面，EMC在25℃下溶解度参数(SP)值通常为从20.0至26.0MPa0.5。一般来讲，具有更接近的SP值的聚合物具有高的亲和力，而具有不同SP值的聚合物具有低的亲和力。通过降低构成粘合剂层的聚合物的SP值，可以改善粘合剂可从EMC剥离的能力。当选择单体组合物以调整SP值至20MPa0.5或更小时，粘合剂层中的聚合物可以在热处理之后表现出足够的粘合剂层可从EMC剥离的能力。
如本文所用，SP值是指在25℃下测量的SP值。
“在25℃下溶解度参数(SP)值(δ)”由下列公式定义：
δ＝(ΔEv/V)0.5
其中ΔEv表示摩尔蒸发能，V表示摩尔体积。根据Fedors方法，SP值可以仅通过化学结构计算(见，如R.F.Fedors，A Method forEstimating Both the Solubility Parameters and Molar Volumes of Liquids，Polym.Eng.Sci.，14(2)，p.147，1974(用于评估液体的溶解度参数和摩尔体积两者的方法，聚合物工程与科学，第14卷(2)期，147页，1974年))。具体的计算实例在实例中示出。
(甲基)丙烯酸烷基酯(a)(其中均聚物在25℃下溶解度参数(SP)值为19MPa0.5或更小)为(例如)丙烯酸2-乙基己酯(其均聚物的SP＝18.9MPa0.5)、丙烯酸异辛酯(其均聚物的SP＝18.9MPa0.5)、丙烯酸月桂酯(其均聚物的SP＝18.7MPa0.5)，或丙烯酸异冰片酯(其均聚物的SP＝18.6MPa0.5)。丙烯酸正丁酯不适于使用，因为其具有20.0MPa0.5的SP值。
(甲基)丙烯酸(b)存在的量，按(甲基)丙烯酸烷基酯(a)和(甲基)丙烯酸酯(b)的总的100重量份计，为1至10重量份。例如，丙烯酸的SP值为26.4并且当单体(b)的量超过10重量份时，聚合物的SP值增加。另一方面，当单体(b)的量小于1.0重量份时，由于(甲基)丙烯酸(b)的羧基和(甲基)丙烯酸缩水甘油酯(c)的缩水甘油基之间的反应，交联不太可能发生并且耐热性降低，并且由于差的内聚力而在使用之后留下粘合剂残余。
(甲基)丙烯酸缩水甘油酯(c)存在的量，按1摩尔(甲基)丙烯酸(b)计，为0.25至2.5摩尔。当量太小时，粘合剂的耐热性变低并且在热处理之后在粘附物上留下粘合剂残余。另一方面，当(甲基)丙烯酸(b)的量太大时，由于对粘附物的粘合力低而在使用期间可能发生分层。考虑粘合剂层的内聚力与对粘附物的粘合力之间的好的平衡，(甲基)丙烯酸缩水甘油酯是如上所述。
除了上述单体(a)、(b)和(c)，用于构成粘合剂的聚合物的单体混合物可以含有其它单体，只要对本发明的效果没有施加不利影响。具体地讲，其它单体包括(例如)丙烯酸C2-8烷基酯，例如丙烯酸正丁酯、丙烯酸异丁酯、丙烯酸异辛酯、丙烯酸2-乙基己酯、丙烯酸2-甲基丁酯、丙烯酸异戊酯或丙烯酸正辛酯；以及甲基丙烯酸C8-15烷基酯，例如甲基丙烯酸异辛酯、甲基丙烯酸2-乙基己酯、甲基丙烯酸十二烷基酯和/或甲基丙烯酸正辛基酯。其实例还包括(甲基)丙烯酸烷基酯，例如(甲基)丙烯酸甲酯、甲基丙烯酸乙酯、(甲基)丙烯酸十八烷醇酯、(甲基)丙烯酸环己酯或丙烯酸月桂酯；(甲基)丙烯酸羟烷基酯，例如(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯或(甲基)丙烯酸羟丁酯；以及极性单体，例如丙烯酰胺、(甲基)丙烯酸二甲基氨乙酯、N-乙烯基吡咯烷酮、丙烯酸2-羟基-3-苯氧基丙酯、二甲氨基丙酰胺、N，N-二甲基丙烯酰胺、异丙基丙烯酰胺或N-羟甲基丙烯酰胺。
聚合物的耐热性和粘合剂残余的防止可以通过由于足够的交联而引起的高的内聚力来体现。因此，有必要充分地进行单体(b)的羧基和单体(c)的缩水甘油基之间的反应。通常，在聚合反应期间，缩水甘油基开环以与羧基形成交联。另外，在聚合反应后可以进行后固化以提高交联度。例如，可以在60至100℃的温度下进行数小时至3天的后固化步骤。还可以通过将单体混合物与固化促进剂混合而省略后固化步骤。磷基固化剂可以用作固化促进剂并且通常按单体的总重量计以0.05至5.0重量％的量使用。可用的磷基固化剂包括三苯膦(TPP)。
此外，构成粘合剂层的聚合物优选分别在25或80℃下具有0.1×105至10.0×105(Pa)的弹性模量，以对粘附物表现出足够的初始粘合力以及可在使用之后从粘附物剥离的能力。当弹性模量太大时，对粘附物的初始粘合力可能变得不够。另一方面，当弹性模量太小时，内聚力降低并且在剥离时粘合剂残余可能留在粘附物上。具体地讲，考虑到当(甲基)丙烯酸的量增加和/或(甲基)丙烯酸缩水甘油酯对(甲基)丙烯酸酯的比率增加时弹性模量增加，可以调整弹性模量。优选的是，在80℃下损耗角正切(tanδ)优选小于0.5。当损耗角正切在上述范围内时，由于充分的交联，即高的内聚力，一般没有粘合剂残余留下。
如本文所用，“弹性模量”是指使用动态粘弹仪在1.0赫兹的频率、-80至100℃范围内的温度和5℃/min的温度上升速率的条件下以剪切模式测量的存储弹性模量G′。另外，损耗角正切(tanδ)是指测量中获得的存储弹性模量(G”)/存储弹性模量(G′)。
粘合剂层的厚度优选为0.5至100μm。当粘合剂层的厚度小于0.5μm时，所得的膜在与粘附物接触时难以与其贴合并且在使用期间可能被剥离。另一方面，当粘合剂层的厚度大于100μm时，在涂布粘合剂层后难以充分地移除溶剂或当热处理粘合剂层时可能出现起泡。
在耐热背衬膜层和粘合剂层之间的粘合力(锚固性能)差的情况下，在从粘附物剥离耐热遮蔽带时，耐热背衬膜层和粘合剂层之间有时发生分层。在那种情况下，可以让耐热背衬膜层的一个表面接受表面处理以易于用常规的已知技术粘合。表面处理的优选实例包括物理处理，例如电晕放电处理、火焰处理、等离子处理或紫外光辐射处理；或湿化学处理。电晕放电处理是特别优选的，因为经受电晕放电处理的耐热背衬膜层是市售的并且可容易得到。
在没有进行表面处理或甚至在表面处理之后锚固性能很差的情况下，可以进行打底漆处理以进一步提高锚固性能。打底漆处理是指在耐热背衬膜层上提供对耐热背衬膜层和粘合剂层两者均具有良好的粘着性的涂覆层(底漆层)的处理，并且粘合剂层可以布置在底漆层上。在那种情况下，底漆层的厚度优选地从0.1至2μm。当底漆层的厚度为0.1μm或更小时，就不能期望其效果。另一方面，当厚度为2μm或更大时，溶剂或化学品可以渗透并且可能发生耐热遮蔽带的分层以及污染粘附物。
可以让与粘合剂层设置在上面的侧面相对的耐热背衬膜层的表面接受防粘处理。当相对侧表面接受防粘处理时，本发明的耐热遮蔽带可以成卷带材的形式保存。作为用于防粘处理的隔离剂，例如，可以使用硅氧烷基隔离剂、氟基隔离剂、具有长链烷基的(甲基)丙烯酸类隔离剂和具有长链烷基的乙烯基醚基隔离剂。
只要本发明的目的和效果没有被不利地影响，粘合剂层可以含有诸如抗氧化剂、紫外线吸收剂、填料(例如无机填料、导电颗粒或颜料)、润滑剂(例如蜡)、增粘剂、增塑剂、固化促进剂和/或荧光染料之类的添加剂。
接下来，将说明用于制备上述耐热遮蔽带的方法的实例。
首先，使上述单体混合物聚合。可以在存在基于偶氮化合物或过氧化物的共聚引发剂的情况下使单体混合物发生自由基聚合。对于聚合方法，可以使用传统已知的聚合方法，例如溶液聚合法、乳液聚合法、悬浮聚合法和本体聚合法等。在这些方法中，溶液聚合法是尤其优选的，因为在聚合后通过涂布并干燥含所得聚合物的溶液可以容易地在耐热背衬膜层上形成粘合剂层。溶液聚合通常在氮气气氛下在30至80℃的聚合温度下进行，聚合时间为1至24小时。将如上所述制备的聚合物溶解在有机溶剂中以制备涂布溶液。对于有机溶剂，通常可以使用乙酸乙酯、甲基乙基酮(MEK)、甲苯或它们的混合物。然后，通过模具涂布法、刮涂法、刮棒涂布法或其它传统已知的涂布方法将涂布溶液均匀地涂布在耐热背衬膜层上。由于大部分涂布溶液仅从上述聚合物和溶剂制备，因此可以容易地实现均匀涂布。然后，通过干燥涂布溶液，连同一起干燥耐热背衬膜层而移除溶剂。然后，通过加热耐热背衬膜层上的聚合物而使聚合物交联。通过在低于100℃或更低的温度下加热，干燥步骤还可以用作交联步骤。或者，在干燥步骤期间初步进行交联，然后另外在额外的附加加热步骤中继续进行。交联是通过聚合物中的缩水甘油基和羧基之间的反应进行。然而，交联不一定完全完成。例如，可以通过在60至100℃的温度下进行反应数小时至约3天而获得足够的粘合强度和使用后的可剥离能力。当与固化促进剂(例如磷基固化促进剂)混合并且在使单体混合物聚合后加速交联时，不必要进行上述交联步骤(后固化)。如上所述，可以制备本发明的耐热掩蔽胶带。
本发明的耐热遮蔽带尤其可用作层合到铜基底或镍-钯合金基底以用于防止在引线框上的半导体芯片将通过模制而覆盖时环氧模塑化合物(EMC)的泄露的遮蔽带。图1示出方形扁平非引线(QFN)芯片级封装的制造工艺流程图的一个实施例。首先，制备耐热背衬膜层2上具有粘合剂层3的本发明的耐热遮蔽带1。层合耐热遮蔽带1和引线框11以使得引线框11的背面接触遮蔽带1的粘合剂层3(步骤(a))。因此，其防止了在后面步骤中模塑化合物通过引线框11的开口从引线框11流到其背面。
接下来，通过等离子处理(例如氩等离子、氩/氧等离子、氩/氢等离子、氩/氮等离子处理)清洁引线框11以移除粘附在引线框11上的污染物(步骤(b))。在此时，尽管等离子通过引线框的开口轰击本发明的遮蔽带1的粘合剂层3，但遮蔽带1的粘合剂层3将不会被剥离或将不会发生粘合强度的过度增加。
接下来，将粘合晶粒的胶带粘合剂12涂布到引线框11上，将半导体芯片13安装在其上，并且加热使粘合晶粒的粘合剂12固化(步骤(c))。粘合晶粒的胶带12通常为环氧基热固性粘合剂并且在180至240℃的温度下处理约几分钟至1小时时固化。
在如步骤(b)中进行等离子清洁之后，进行引线结合(步骤(d))。引线结合通常由金属线材(例如金线)将芯片上的电极垫电连接到引线上。通常通过(例如)将诸如金丝之类的金属火花和热-压到芯片上的电极上来熔融金属线材进行引线结合。在该方法中，可以将该层合材料从180℃加热至210℃并且在一些情况下，将其从200℃加热至240℃。
然后，通过使用包覆成型化合物进行树脂密封步骤(步骤(e))。包覆成型化合物是(例如)环氧基热固性树脂，即，环氧模塑化合物(EMC)。通过将液化树脂加热至约160至240℃将其固化为密封树脂14。
接下来，剥离附接到引线框11的遮蔽带1(步骤(f))。本发明的遮蔽带1的特性没有被高温热处理和等离子处理降低，并且胶带保持稳定的粘合强度。因此，其没有分层并且没有引起粘合强度的过度增加。由于粘合剂具有足够低的粘合强度用于剥离以及具有足够高的内聚强度，剥离时引线框11上没有留下任何粘合剂残余。
在剥离遮蔽带1后，可以对所得主体进行通常的工序。例如，将其进行焊镀、固定到切片胶带上并切片为单独的封装。
实例
将以举例的方式说明本发明。本领域的普通技术人员应当理解本发明并不限于这些实例。
实例1至29(Ex.1-29)以及比较例1至7(Comp.1-7)
丙烯酸类共聚物的合成
通过将乙酸乙酯溶剂中具有50重量％单体浓度的单体溶液进行共聚化而制备如在下列表1和2中示出的具有下列组合物比率的丙烯酸类共聚物。对于引发剂，使用由和光纯药工业株式会社(Wako PureChemical Industries，Ltd.)制造的偶氮二(2，4-二甲基戊腈)(V-65(商品名))，用量为按单体的重量计的0.25重量％。在氮气吹扫反应器后在55℃下水浴中进行24小时的聚合反应。
Figure A20078004483500151
表2：材料
  共聚物的SP值(MPa0.5)
 丙烯酸丁酯(BA)   20.0
 丙烯酸2-乙基己酯(2EHA)   18.9
 丙烯酸异辛酯(IOA)   18.9
 丙烯酸叔丁酯(TBA)   18.5
 丙烯酸月桂酯(LA)   18.7
 丙烯酸异冰片酯(IBXA)   18.6
 丙烯酸(AA)   26.4
 甲基丙烯酸缩水甘油酯(GMA)   22.0
溶解度参数
根据Fedors方法，仅通过化学结构计算SP值(请参见R.F.Fedors，A Method for Estimating Both the Solubility Parameters and MolarVolumes of Liquids，Polym.Eng.Sci.，14(2)，p.147，1974(用于评估液体的溶解度参数和摩尔体积两者的方法，聚合物工程与科学，第14卷(2)期，147页，1974年))。具体地讲，构成粘合剂层的聚合物的SP值通过表3和4中示出的工序确定。
Figure A20078004483500171
Figure A20078004483500181
表4：粘合剂聚合物SP值的计算实例
Figure A20078004483500191
虽然交联前后的SP值之间的比较在表4中示出，但可以确认这两种情况下的值几乎是相同的。
分子量的测量
通过凝胶渗透色谱法(GPC)在下列条件下测量重均分子量Mw、数均分子量Mn和多分散性Mw/Mn。
设备：HP-1090系列II
稀释剂：四氢呋喃(THF)
柱子：PLgel MIXED-Ax2(300毫米×7.5毫米，内径(i.d.)；5毫米)
烘箱温度：室温(25℃)
流速：1.0mL/min
检测器：折射率
样品浓度：0.1％(w/w)
注射体积：50微升
校准标准：聚苯乙烯
遮蔽带的制备
如在下表5中示出的，通过将100重量份固体含量的上述聚合物与预定量的三苯膦(TPP)混合而制备粘合剂溶液。调整所有溶液的浓度至浓度为在甲苯中30重量％的固体含量。用该粘合剂溶液涂布25μm厚的聚酰亚胺膜(Kapton 100V，由Du Pont-Toray有限公司制造)，在65℃的烘箱中干燥5分钟，并然后将其层合到硅氧烷处理过的50μm厚的聚对苯二甲酸乙二醇酯(PET)膜(Purex A50，由Teijin Dupont有限公司制造)上。干燥后将粘合剂的涂层厚度调整至5μm。此外，如在表5中示出的，相对于某些胶带，在65℃的烘箱中进行后固化3天以加速交联反应。
粘弹性的测量
用上面得到的溶液样品涂布硅氧烷处理过的50μm厚的聚对苯二甲酸乙二醇酯(PET)膜(Purex A50，由Teijin Dupont有限公司制造)，然后在65℃的烘箱中干燥5分钟以形成5μm厚的粘合剂层。使用由Rheometrix有限公司制造的ARES，在1.0赫兹的频率、-80至100℃范围内的温度和5℃/min的温度上升速率的条件下，以剪切模式测量存储弹性模量(G′)、存储弹性模量(G”)和损耗角正切(tanδ)(存储弹性模量(G”)/存储弹性模量(G′))。另外，将玻璃化转变温度(Tg)确定为损耗角正切(tanδ)的峰值温度。将在25或80℃下存储弹性模量与在80℃下tanδ值比较。在足够程度足够的情况下，tanδ值小于0.5。
Figure A20078004483500221
Figure A20078004483500231
在上述表中，因为使用具有20.0的SP值的正丁基单体，因此就聚合物组成而言比较例1至4(比较例1至3)不在本发明的范围之内。另外，就因为没有进行后固化以及没有加入固化促进剂而丙烯酸类聚合物没有交联的事实而言，比较例5至7(Comp.5-7)不在本发明的范围之内。将这个事实与下文描述的tanδ为0.64或更大以及实例1至25(Ex.1-25)的交联聚合物的δ小于0.5的事实形成对比。
据信因为玻璃化转变温度为25°或更低并且在25或80℃下弹性模量为从0.1×105至10×105(Pa)，所以所有的样品(实例和比较例)可以充分表现出具有初始粘合强度。据信，当tanδ超过0.5时，交联度不够并因而留下粘合剂残余。当tanδ为0.5或更小时，交联度是足够的，并因而没有留下任何粘合剂残余。
粘合强度的测量(对于铜板的粘合强度)(初始粘合强度以及热 处理后的粘合强度)
将上面得到的样品切成每个具有25毫米的宽度，它们中的每一个用2千克的辊来回滚动一次压粘到铜板(C1100，1.0毫米厚，由NipponTact K.K.制造)上。将压粘过的样品在室温下保持20分钟并且在tensilon上测量其90°剥离粘合强度(N/25mm)。在25℃下以300毫米/分钟的测量速率进行测量。这称为“初始粘合强度”。将样品压粘到板上，在200℃的烘箱中保持45分钟，并且在室温下保持1小时后在tensilon上测量90°剥离粘合强度(N/25mm)。这称为“热处理之后的粘合强度”。结果如表6所示。
粘合强度(对EMC的粘合强度)的测量
在上面得到的胶带样品上，将EMC(CEL-9200-HF10，由日立化成工业株式会社(Hitachi Chemicals Co.，Ltd.)制造)在2.0kgf/cm2的压力和185℃的温度条件下热压90秒。将压制的样品在室温下保持1小时并切成25毫米宽度的样品，然后在25℃下以300mm/min的测量速率测量90剥离粘合强度(N/25mm)。结果如表6所示。
施加测试
模拟在用于制造方形扁平非-引线(QFN)芯片级封装(CSP)的引线框遮蔽施加中遇到的条件。通过下面的步骤1至5进行评估以检查EMC的渗漏以及剥离胶带后粘合剂的残余。对于引线框，使用镀镍钯的铜框架。
步骤1：将上面得到的遮蔽带层合到引线框上以不会在它们之间掺入气泡。
步骤2：为了模拟晶粒附连的环氧树脂粘合剂的热固化以及引线结合，将层合材料在200℃下热处理10分钟。
步骤3：使用EMC(CEL-9200-HF10，由日立化成工业株式会社制造)在185℃下进行熔融模制和固化90秒。
步骤4：剥离胶带。
胶带5：通过显微镜观察引线框的胶带剥离表面。
结果如表6所示。
表6：遮蔽带的评估结果
Figure A20078004483500251
Figure A20078004483500261
在处理期间所有的遮蔽带都没有分层并且也没有确认MEC的渗漏。另外，所有的遮蔽带在胶带可从铜框架剥离的能力方面是非常好的，并且没有观察到诸如粘合剂残余之类的污染。
然而，当构成粘合剂层的聚合物的SP值高时，类似于比较例1至4，即，使用具有20.0MPa0.5SP值的丙烯酸正丁酯(在整个聚合物的情况下大于20.0MPa0.5)，对EMC的亲和力很高并且因此MEC可能熔融粘附。因此，剥离胶带是，EMC的表面特别粗糙。这种现象在没有进行后固化的样品中是极严重的，并且在比较例1中留有粘合剂残余。这显示了粘合剂层差的粘合强度，即，没有产生充分的交联。
在本发明中，因为单体(其中构成粘合剂层的聚合物具有低的SP值，即，均聚物的SP值为19MPa0.5或更小)用作主要组分(在整个聚合物的情况下小于20.0MPa0.5)，所以对EMC的亲和力低并且EMC不太可能熔融粘附。因此，据发现没有任何粘合剂残余留在EMC表面上并且剥离胶带时EMC的表面不是粗糙的。
据发现，TPP的加入显著地加速了粘合剂的交联反应并且在用粘合剂涂布时仅温和的干燥步骤(在65℃下5分钟)就赋予所需的内聚力。因此，通常需要的进行很长时间的后固化变得不必要。当含加入其中的TPP的样品被进一步后固化时，其对于粘附物表现出足够的初始粘合强度，并且可以在热处理后被剥离而不会引起粘合强度大的改变。据发现，当使用本发明的遮蔽带时，粘附物没有被EMC污染，因此在使用后剥离遮蔽带时不需要清洁步骤。

Claims (6)

1.一种耐热遮蔽带，包括(1)耐热背衬膜层，和(2)压敏粘合剂层，所述压敏粘合剂层设置在所述耐热背衬膜层上，其中所述粘合剂层包含在25℃下溶解度参数(SP)值为20MPa0.5或更小的聚合物。
2.一种耐热遮蔽带，包括(1)耐热背衬膜层，和(2)压敏粘合剂层，所述压敏粘合剂层设置在所述耐热背衬膜层上，其中所述粘合剂层包含衍生自聚合单体混合物的聚合物，所述单体混合物包含(甲基)丙烯酸烷基酯、(甲基)丙烯酸和(甲基)丙烯酸缩水甘油酯，其中所述(甲基)丙烯酸烷基酯的均聚物在25℃的溶解度参数(SP)值为19MPa0.5或更小，其中所述(甲基)丙烯酸烷基酯存在的量，按所述(甲基)丙烯酸烷基酯和所述(甲基)丙烯酸100重量份的总重计，为90至99重量份，其中所述(甲基)丙烯酸存在的量，按所述(甲基)丙烯酸烷基酯和所述(甲基)丙烯酸100重量份的总重计，为1至10重量份，并且其中所述(甲基)丙烯酸缩水甘油酯存在的量，按1摩尔所述(甲基)丙烯酸计，为0.25至2.5摩尔。
3.根据权利要求1或2所述的耐热遮蔽带，其中所述(甲基)丙烯酸烷基酯为选自由丙烯酸2-乙基己酯、丙烯酸异辛酯、丙烯酸月桂酯、丙烯酸叔丁酯和丙烯酸异冰片酯组成的组中的至少一种。
4.根据权利要求1至3中任一项所述的耐热遮蔽带，其中所述耐热背衬膜层是选自由聚对苯二甲酸乙二醇酯(PET)、聚醚酰亚胺、聚醚砜、聚萘二甲酸乙二醇酯或聚苯硫醚、聚醚醚酮、聚酰胺酰亚胺和聚酰亚胺组成的组的材料。
5.一种用于制备芯片级封装的方法，包括如下步骤：将遮蔽带和引线框层合、在所述引线框上安装半导体芯片、电连接所述芯片以及用包覆成型化合物对所述封装进行树脂密封，其中所述遮蔽带是权利要求1至4中任一项所述的耐热遮蔽带，并且所述包覆成型化合物为环氧模塑化合物(EMC)。
6.一种根据权利要求5所述制备芯片级封装的方法，其中所述环氧模塑化合物(EMC)在25℃的SP值大于20.0MPa0.5并且不大于26.0MPa0.5，构成所述粘合剂层的所述聚合物的SP值为20.0MPa0.5或更小。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102061136A (zh) * 2009-11-12 2011-05-18 日东电工株式会社 树脂密封用粘合带及树脂密封型半导体装置的制造方法
CN102136432A (zh) * 2010-01-26 2011-07-27 东丽世韩株式会社 利用耐热胶粘片制造半导体器件的方法
CN106687545A (zh) * 2014-07-14 2017-05-17 电化株式会社 聚偏二氟乙烯系树脂粘合薄膜
CN104995273B (zh) * 2013-02-18 2017-10-20 3M创新有限公司 压敏胶带及其制成的制品

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010017380A2 (en) * 2008-08-08 2010-02-11 Saint-Gobain Performance Plastics Corporation Thermal spray masking tape
JP5511830B2 (ja) * 2008-10-14 2014-06-04 ビーエーエスエフ ソシエタス・ヨーロピア 長鎖アクリラートを有するコポリマー
TW201107442A (en) 2009-04-30 2011-03-01 Furukawa Electric Co Ltd Tape for wafer processing
JP5366781B2 (ja) * 2009-12-14 2013-12-11 日東電工株式会社 樹脂封止用耐熱性粘着テープ及びこれを用いた樹脂封止型半導体装置の製造方法
TWI590394B (zh) * 2011-03-10 2017-07-01 住友電木股份有限公司 半導體裝置之製造方法
JP6279316B2 (ja) * 2012-12-27 2018-02-14 日本合成化学工業株式会社 耐熱粘着フィルム用アクリル系樹脂の製造方法
JP2015017159A (ja) * 2013-07-09 2015-01-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体ウェハ加工用粘着フィルム、薄層化された半導体ウェハの製造方法及び半導体チップの製造方法
KR101854493B1 (ko) * 2014-08-29 2018-05-04 삼성에스디아이 주식회사 점착필름, 및 이를 이용한 디스플레이 부재
JP6777974B2 (ja) * 2015-04-01 2020-10-28 デンカ株式会社 雨樋
US10121765B2 (en) 2017-03-01 2018-11-06 Semiconductor Components Industries, Llc Semiconductor device and method of forming WLCSP
JP7099896B2 (ja) * 2018-07-20 2022-07-12 スリーエム イノベイティブ プロパティズ カンパニー ウィンドウフィルム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3284423A (en) * 1963-12-20 1966-11-08 Monsanto Co Pressure-sensitive creep-resistant resin composition
DE1719096B2 (de) * 1967-10-31 1976-11-04 Beiersdorf Ag, 2000 Hamburg Verfahren zur herstellung von selbstklebebaendern oder -folien
US4812541A (en) * 1987-12-23 1989-03-14 Avery International Corporation High performance pressure-sensitive adhesive polymers
CA2042065C (en) * 1989-09-14 2002-12-17 Sebastian S. Plamthottam Tackified dual cure pressure-sensitive adhesive
DE19960466A1 (de) * 1999-12-15 2001-09-20 Beiersdorf Ag Klebeband, insbesondere zum Maskieren einer KTL-Grundierung
JP4266120B2 (ja) * 2002-03-27 2009-05-20 三井化学株式会社 半導体ウェハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウェハの保護方法
WO2003081653A1 (fr) * 2002-03-27 2003-10-02 Mitsui Chemicals, Inc. Film adhesif sensible a la pression destine a la protection de surface de plaquettes de semi-conducteurs et procede de protection de plaquettes de semi-conducteurs a l'aide de ce film
JP4610168B2 (ja) * 2003-08-06 2011-01-12 スリーエム イノベイティブ プロパティズ カンパニー 耐熱マスキングテープ
KR100576068B1 (ko) * 2004-04-21 2006-05-03 일동화학 주식회사 아크릴계 방열 패드
KR20060102197A (ko) * 2005-03-23 2006-09-27 강규정 바닥재 ｐｖｃ 타일용 친환경 아크릴계 에멀젼 접착제조성물

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102061136A (zh) * 2009-11-12 2011-05-18 日东电工株式会社 树脂密封用粘合带及树脂密封型半导体装置的制造方法
CN102061136B (zh) * 2009-11-12 2015-03-04 日东电工株式会社 树脂密封用粘合带及树脂密封型半导体装置的制造方法
CN102136432A (zh) * 2010-01-26 2011-07-27 东丽世韩株式会社 利用耐热胶粘片制造半导体器件的方法
CN104995273B (zh) * 2013-02-18 2017-10-20 3M创新有限公司 压敏胶带及其制成的制品
CN106687545A (zh) * 2014-07-14 2017-05-17 电化株式会社 聚偏二氟乙烯系树脂粘合薄膜
CN106687545B (zh) * 2014-07-14 2020-10-16 电化株式会社 聚偏二氟乙烯系树脂粘合薄膜

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