CN101552030A - Flash memory device for regulating storage efficiency - Google Patents
Flash memory device for regulating storage efficiency Download PDFInfo
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- CN101552030A CN101552030A CNA2008100918840A CN200810091884A CN101552030A CN 101552030 A CN101552030 A CN 101552030A CN A2008100918840 A CNA2008100918840 A CN A2008100918840A CN 200810091884 A CN200810091884 A CN 200810091884A CN 101552030 A CN101552030 A CN 101552030A
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Abstract
The invention provides a flash memory device for regulating storage efficiency, which comprises a multilayered flash memory, a single-layered flash memory and a control unit. The multilayered flash memory and the single-layered flash memory are both used for storing data. The flash memory device provides the multilayered flash memory and the single-layered flash memory. The control unit of the flash memory device can recognize data characteristics of a stored file and determine that the multilayered flash memory or single-layered flash memory is used for storing the data according to different data characteristics, therefore, the flash memory device can more effectively use the storage space so as to achieve the purpose of regulating the storage efficiency.
Description
Technical field
The relevant a kind of access flash memory of the present invention more particularly, is a flash memory of adjusting flash memory access usefulness about a kind of.
Background technology
Flash memory (Flash Memory) is one non-volatile (non-volatile) internal memory, still can preserve the data that before write when power-off.With other Storage Media (as hard disk, floppy disk or tape etc.) relatively, flash memory has that volume is little, in light weight, do not have the machinery action when against shock, access postpones and characteristics such as low power consumption.Because these characteristics of flash memory, therefore data storage mediums such as consumption electronic products, embedded system or portable computer adopt all in a large number in recent years.
Flash memory mainly can divide two kinds: NOR type flash memory and NAND type flash memory.The advantage of NOR type flash memory is that low-voltage, access are fast and stability is high, therefore portable electronic devices and electronic communication equipment have been widely used in, such as personal computer (Personal Computer, PC), mobile phone, personal digital assistant (Personal Digital Assistance, PDA) and set-top box (Set-top Box, STB) etc.NAND type flash memory is the flash memory that designs for the data storing purposes specially, is applied to store and preserve the storing media of lot of data usually, as Portable memory card (SD Memory Card, Compact FlashCard, Memory Stick or the like).When flash memory writes (Write), erases (Erase) and reads (Read) running in execution, can see through inner capacitive coupling (Coupling) and control upward movement of electric charges of floating boom (FloatingGate) effectively, and then make described floating boom to determine the transistorized threshold voltage of lower floor according to described movement of electric charges.In other words, when negatron injected described floating boom, the storing state of described floating boom just can become 0 from 1; And after negatron was removed from described floating boom, the storing state of described floating boom just can become 1 from 0.
Nand flash memory inside is made up of several pieces (block).Each piece comprises several pages or leaves (page), each page or leaf then can be divided into region of data storage and spare area (spare area), and the data capacity of region of data storage can be a byte, is used for storing the use data, the spare area be used for storing bug patch code (Error CorrectionCode, ECC).Different with NOR type flash memory, NAND type flash memory read and the unit of writing is all a page or leaf, the action of reading and writing data must be earlier to chip send read or write instruction after just can carry out.
Yet flash memory itself can't directly be changed data (update-in-place) in the original place, that is to say, if will be when writing Data Position and write data once more, and the action that execution is earlier erased.And the nand flash memory unit of writing is page or leaf, and the unit of erasing is a piece.So write when request when sending to chip, must erase earlier one whole, could write to data described page or leaf.And in general erase time that action needs of piece is about 10～20 times of a page or leaf write activity time.If when a unit of erasing greater than the unit that writes, this expression is if want the execution block action of erasing, and must be first active page in the piece of desiring to erase be moved to other piece and just can carry out.
Moreover (limited erase counts) is restricted for the number of times of erasing of flash memory.This is because write or read when operating in execution when flash memory, because the electric capacity in the reality all has the phenomenon of electric leakage, therefore after flash memory repeats to write or reads above 100,000 times, will cause the stored level difference of described electric capacity to be not enough to the electric charge deficiency that makes that floating boom is stored, and then causing the stored data of described flash memory to lose, severe patient more may make described flash memory begin to decay and can't carry out the running of reading.That is to say,, can cause this piece write/erase stroke defect if a certain often is wiped free of and surpasses available time.
Nand flash memory has can be divided into two kinds: a kind of is that (Multi-level cell, MLC) flash memory, another kind then are single-layer type (Single-level cell, SLC) flash memories to multiple field.Each flash memory cell of multiple field nand flash memory has a floating Gate (Floating Gate).Floating Gate stores to utilize the electric charge of varying level (Level) to present 4 kinds of different store statuss, and every kind of state is represented two binary numerals (00,01,10 and 11), therefore once stores the value more than 4, and packing density is bigger.Review the single-layer type nand flash memory,, when writing data, pass through electric charge making alive floating Gate owing to the oxide film between its floating Gate and source electrode is thinner, see through source electrode then, stored electric charge can be eliminated,, just can store 1 message unit by such mode.Therefore multiple field nand flash memory framework can have reasonable storage density, and multiple field nand flash memory consecutive access speed (Access Time) is faster than single-layer type nand flash memory.In addition, single-layer type nand flash memory framework can access 100,000 times, and multiple field nand flash memory framework can only bear about 10,000 times access, so the serviceable life of multiple field nand flash memory is shorter.Moreover the multiple field nand flash memory can high about about 15% the current drain of loss-rate single-layer type nand flash memory.
See also Fig. 1 and Fig. 2, Fig. 1 is the synoptic diagram that prior art uses the storage device of single-layer type nand flash memory framework.Fig. 2 is the synoptic diagram that prior art uses the storage device of multiple field nand flash memory framework.Use the storage device 70 of multiple field nand flash memory mostly to be the low speed card at present, storage device 70 sees through each multiple field nand flash memory memory district 74 of controller 72 accesses.The storage device 80 of single-layer type nand flash memory then is used for high performance flash card, and storage device 80 sees through each single-layer type nand flash memory memory district 84 of controller 82 accesses.Because no matter the user uses the purpose of flash memory to be not quite similar, but also to consider whether compatible problem.Therefore developing a kind of can the adjustment voluntarily simultaneously uses the multiple field or the flash memory device of single-layer type nand flash memory storage data to be necessary.
Summary of the invention
Therefore the invention provides a kind of flash memory of adjusting access usefulness, can determine according to the data characteristic of a file, to solve the problem of prior art by multiple field flash memory or single-layer type flash memory access file.
A purpose of the present invention provides a kind of flash memory of adjusting access usefulness, and it comprises multiple field flash memory, single-layer type flash memory and control module.Described multiple field flash memory is used for storage data.Described single-layer type flash memory is used for storage data.Described control module is used for determining by described multiple field flash memory or described single-layer type flash memory access file according to the data characteristic of file.
According to embodiments of the invention, described data characteristic include file size.When file size surpasses a default value, deposit file in described multiple field flash memory, when file size during, deposit file in described single-layer type flash memory less than described default value.
According to another embodiment of the present invention, described data characteristic include file form.When data characteristic is image file or audio effect file, deposit described file in described multiple field flash memory.When the data characteristic of described file is encrypt file, deposit described file in described single-layer type flash memory.
For foregoing of the present invention can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is the synoptic diagram that prior art uses the storage device of single-layer type nand flash memory framework.
Fig. 2 is the synoptic diagram that prior art uses the storage device of multiple field nand flash memory framework.
Fig. 3 is the functional block diagram of stocking system of the present invention.
Fig. 4 is a cellular construction figure of multiple field flash memory.
Fig. 5 is a cellular construction figure of single-layer type flash memory.
Embodiment
See also Fig. 3, Fig. 3 is the functional block diagram of stocking system 10 of the present invention.Stocking system 10 comprises a main frame 20 and a flash memory 50.But main frame 20 can be desktop PC, mobile computer, industrial computer or recording playback DVD playing device or the like.Main frame 20 comprises a processing unit 22, is used for being responsible for the communication to operating system and bus driver interface (bus driver).Flash memory 50 comprises control module 52, multiple field flash memory 54 and single-layer type flash memory 56.
See also Fig. 4 and Fig. 5, Fig. 4 is a cellular construction figure of multiple field flash memory, and Fig. 5 is a cellular construction figure of single-layer type flash memory.Unit one of multiple field nand flash memory cell 54 comprises floating boom (Floating Gate) 542, source electrode (source) 544, drain electrode (drain) 546, gate pole 548 and oxide film 545.When electric charge flowed into the unit of multiple field nand flash memory 54 by source electrode 544, floating Gate 542 utilized the electric charge that stores varying level (Level) to present 4 kinds of different store statuss, and every kind of state is represented two binary numerals (00,01,10 and 11).Single-layer type nand flash memory cell 56 comprises a floating Gate (Floating Gate) 562, source electrode 564, drain electrode 566, gate pole 568 and oxide film 565, because the oxide film 565 that floating Gate 562 and source electrode are 564 is thinner, when writing data, by floating Gate 562 is applied voltage, see through source electrode 564 then, stored electric charge can be eliminated,, just can store 1 message unit by such mode.
When flash memory 50 linked main frame 20, the user can see through user's interface 24 of main frame and assign instruction with access flash memory 50.After the user assigned instruction, processing unit 22 can send access request to flash memory 50, with the data in the access flash memory 50.This access request can be sent to the control module 52 of flash memory 50 earlier, and control module 52 can be discerned position and the data characteristic that this described access request is wanted the file of access earlier.In first embodiment, data characteristic refers to the size of desiring accessing file.When file size surpassed a default value, this expression file data amount was bigger, and then control module 52 can be set the passage 62 that is linked to multiple field flash memory 54, deposits described file in multiple field flash memory 54.Opposite, when file size during less than default value, then control module 52 can be set the passage 64 that is linked to single-layer type flash memory 56, deposits file in single-layer type flash memory 56.Certainly, in a second embodiment, also can set when file size surpasses a default value, deposit file in single-layer type flash memory 56.Opposite, when file size during, deposit file in multiple field flash memory 54 less than described default value.
In the 3rd embodiment, data characteristic can also be a file layout.If it is image file or audio effect file that control module 52 identifies file layout, for example JEPG, MPEG, AVI or other image or audio saving format or the like, then control module 52 can be set the passage 62 that is linked to multiple field flash memory 54, and file is stored in multiple field flash memory 54.If it is encrypt file that control module 52 identifies file layout, expression this document may be that important software drives sign indicating number, and then control module 52 can be set the passage 64 that is linked to single-layer type flash memory 56, and file is stored in access speed single-layer type flash memory 56 faster.Certainly, in the 4th embodiment, can also set when control module 52 identifies file layout is image file or audio effect file, then file is stored in single-layer type flash memory 56.If it is encrypt file that control module 52 identifies file layout, file is stored in access speed multiple field flash memory 54 faster.
In sum; though the present invention discloses as above with preferred embodiment; but preferred embodiment is not in order to restriction the present invention; the those of ordinary skill in this field; without departing from the spirit and scope of the present invention; all can do various changes and retouching, so protection scope of the present invention is as the criterion with the scope that claim defines.
Claims (6)
1. flash memory of adjusting access usefulness, it is characterized in that: it comprises:
One multiple field flash memory is used for storage data;
One single-layer type flash memory is used for storage data; And
One control module is used for determining by described multiple field flash memory or the described file of described single-layer type flash memory access according to the data characteristic of a file.
2. flash memory according to claim 1 is characterized in that: described data characteristic comprises the size of described file.
3. flash memory according to claim 2, it is characterized in that: when the size of described file surpasses a default value, deposit described file in described multiple field flash memory,, deposit described file in described single-layer type flash memory when the size of described file during less than described default value.
4. flash memory according to claim 1 is characterized in that: described data characteristic comprises the form of described file.
5. flash memory according to claim 4 is characterized in that: when the data characteristic of described file is an image file or audio effect file, deposit described file in described multiple field flash memory.
6. flash memory according to claim 4 is characterized in that: when the data characteristic of described file is an encrypt file, deposit described file in described single-layer type flash memory.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008100918840A CN101552030A (en) | 2008-04-02 | 2008-04-02 | Flash memory device for regulating storage efficiency |
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| CNA2008100918840A CN101552030A (en) | 2008-04-02 | 2008-04-02 | Flash memory device for regulating storage efficiency |
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Open date: 20091007 |