CN101538741A - Synthetic utilization method of gallium arsenide polycrystal tail - Google Patents
Synthetic utilization method of gallium arsenide polycrystal tail Download PDFInfo
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- CN101538741A CN101538741A CN200910064346A CN200910064346A CN101538741A CN 101538741 A CN101538741 A CN 101538741A CN 200910064346 A CN200910064346 A CN 200910064346A CN 200910064346 A CN200910064346 A CN 200910064346A CN 101538741 A CN101538741 A CN 101538741A
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- gallium arsenide
- tail
- arsenide polycrystal
- polycrystal
- synthetic
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Abstract
The invention discloses a synthetic utilization method of a gallium arsenide polycrystal tail. The method comprises the following steps: treating and cleaning surface of the gallium arsenide polycrystal tail, polishing impurities and oxide layer off the surface of the gallium arsenide polycrystal tail by waterproof abrasive paper, etching with hydrochloric acid and ammonium nitrate at 3:1 ratio for 3-5min to obtain smooth surface, regulating proportions of the raw materials so that the ratio of arsenic to gallium is 1:1, and adding arsenic accounting for 0.5% of total weight of the gallium arsenide to a quartz tube for synthesis, regulating heating rate of a synthesis heat field to 2:1 during the synthesis and growth process, and keeping pressure in the quartz tube not higher than atmospheric pressure. The method is characterized by regulating raw material weight ratio and heat field heating rate, which increases utilization ratio of synthetic size up to 99%, and enhancing safety in production.
Description
Technical field:
The present invention relates to the synthetic method of utilizing of polycrystalline material gallium arsenide, particularly a kind of gallium arsenide polycrystal tail.
Background technology:
At present in utilizing the synthetic GaAs technology of horizontal gradient freezing method, can produce the gallium arsenide polycrystal tail of a part of rich gallium state, can't obtain utilizing according to this part tailing of existing process method, cause serious waste, the utilization ratio of gallium arsenide synthetic material is about 90%.
Summary of the invention:
The synthetic method of utilizing that the purpose of this invention is to provide the high gallium arsenide polycrystal tail of a kind of gallium arsenide synthetic materials utilization ratio.
Technical solution of the present invention is finished as follows, a kind of synthetic method of utilizing of gallium arsenide polycrystal tail, it is characterized in that: at first that the gallium arsenide polycrystal tail surface treatment is clean, promptly polish off with the impurity and the zone of oxidation of silicon carbide paper with the gallium arsenide polycrystal tail surface, pressed 3: 1 proportioning corrosions 3-5 minute with hydrochloric acid and nitric acid again, reaching surface-brightening is as the criterion, the 2nd, proportion of raw materials is adjusted, the weight ratio that makes arsenic and gallium is 1: 1, and to add the gallium arsenide gross weight be that 0.5% arsenic is packed into simultaneously and synthesized in the silica tube, the 3rd, the temperature rise rate of adjusting synthetic thermal field in the synthetically grown process is 2: 1, and keeps the air pressure in the silica tube not to be higher than a normal atmosphere.With method of the present invention mainly is that raw material weight ratio and thermal field temperature rise rate are adjusted, and the utilization ratio of synthetic material is reached more than 99%, and help improving the security of production process.
Embodiment:
The present invention is improvements over the prior art, promptly the gallium arsenide polycrystal tail that abandons is in the past made full use of.Concrete grammar is, at first the gallium arsenide polycrystal tail surface handled, and treatment process is with silicon carbide paper the surface impurity of above-mentioned tailing and zone of oxidation to be polished off, and uses 3: 1 hydrochloric acid and nitric acid proportioning corrosion 3-5 minute then, is as the criterion to reach surface-brightening; The 2nd, proportion of raw materials is adjusted, making the arsenic and the gross weight ratio of gallium is 1: 1, and adds the arsenic of gallium arsenide gross weight 0.5%, synthesizes in the silica tube of packing into simultaneously; The 3rd, the heat-up rate of adjusting synthetic thermal field in synthetic is 2: 1, and keeps the air pressure in the silica tube not to be higher than a normal atmosphere, can reach requirement of the present invention.
Claims (1)
1, a kind of synthetic method of utilizing of gallium arsenide polycrystal tail, it is characterized in that: at first that the gallium arsenide polycrystal tail surface treatment is clean, promptly polish off with the impurity and the zone of oxidation of silicon carbide paper with the gallium arsenide polycrystal tail surface, pressed 3: 1 proportioning corrosions 3-5 minute with hydrochloric acid and nitric acid again, reaching surface-brightening is as the criterion, the 2nd, proportion of raw materials is adjusted, the weight ratio that makes arsenic and gallium is 1: 1, and to add the gallium arsenide gross weight be that 0.5% arsenic is packed into simultaneously and synthesized in the silica tube, the 3rd, the temperature rise rate of adjusting synthetic thermal field in the synthetically grown process is 2: 1, and keeps the air pressure in the silica tube not to be higher than a normal atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910064346A CN101538741A (en) | 2009-03-09 | 2009-03-09 | Synthetic utilization method of gallium arsenide polycrystal tail |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910064346A CN101538741A (en) | 2009-03-09 | 2009-03-09 | Synthetic utilization method of gallium arsenide polycrystal tail |
Publications (1)
| Publication Number | Publication Date |
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| CN101538741A true CN101538741A (en) | 2009-09-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200910064346A Pending CN101538741A (en) | 2009-03-09 | 2009-03-09 | Synthetic utilization method of gallium arsenide polycrystal tail |
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| CN (1) | CN101538741A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184501A (en) * | 2011-12-30 | 2013-07-03 | 北京有色金属研究总院 | Gallium arsenide polycrystalline ingot casting method |
| CN103184520A (en) * | 2011-12-29 | 2013-07-03 | 北京有色金属研究总院 | Directly pulling reutilization method of gallium arsenide crystal defective material |
| CN103668456A (en) * | 2013-12-12 | 2014-03-26 | 福建福晶科技股份有限公司 | Method for recycling terbium gallium garnet crystal growth oddments |
| CN107829141A (en) * | 2017-11-10 | 2018-03-23 | 北京鼎泰芯源科技发展有限公司 | The circulation utilization method of rich indium indium phosphide polycrystal material |
| CN111575788A (en) * | 2020-05-25 | 2020-08-25 | 广东先导先进材料股份有限公司 | Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste |
-
2009
- 2009-03-09 CN CN200910064346A patent/CN101538741A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184520A (en) * | 2011-12-29 | 2013-07-03 | 北京有色金属研究总院 | Directly pulling reutilization method of gallium arsenide crystal defective material |
| CN103184520B (en) * | 2011-12-29 | 2016-06-01 | 有研光电新材料有限责任公司 | A kind of vertical pulling reuse method of gallium arsenide defective material |
| CN103184501A (en) * | 2011-12-30 | 2013-07-03 | 北京有色金属研究总院 | Gallium arsenide polycrystalline ingot casting method |
| CN103184501B (en) * | 2011-12-30 | 2015-12-09 | 有研光电新材料有限责任公司 | A kind of gallium arsenide polycrystal casting ingot method |
| CN103668456A (en) * | 2013-12-12 | 2014-03-26 | 福建福晶科技股份有限公司 | Method for recycling terbium gallium garnet crystal growth oddments |
| CN103668456B (en) * | 2013-12-12 | 2016-04-27 | 福建福晶科技股份有限公司 | A kind of terbium gallium garnet crystal growth clout recoverying and utilizing method |
| CN107829141A (en) * | 2017-11-10 | 2018-03-23 | 北京鼎泰芯源科技发展有限公司 | The circulation utilization method of rich indium indium phosphide polycrystal material |
| CN111575788A (en) * | 2020-05-25 | 2020-08-25 | 广东先导先进材料股份有限公司 | Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste |
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Application publication date: 20090923 |