CN101533798A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
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- CN101533798A CN101533798A CN200910127342A CN200910127342A CN101533798A CN 101533798 A CN101533798 A CN 101533798A CN 200910127342 A CN200910127342 A CN 200910127342A CN 200910127342 A CN200910127342 A CN 200910127342A CN 101533798 A CN101533798 A CN 101533798A
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Abstract
This invention relates to an electrostatic chuck. The electrostatic chuck of this invention is used in a semiconductor manufacturing device that is provided with a cooling device and an electrostatic chuck body, wherein the electrostatic chuck body is mounted on the cooling device and provided with a workpiece holding surface; a gas supply hole passing through the cooling device and extending from one main surface of the cooling device to the other main surface is mounted. An opening section of the gas supply hole is provided with a main counter bore section having larger diameter than the gas supply hole. An arc prevention member is buried in the main counter bore section and is made of an insulating member of a gas flow path connected with the gas supply hole. A thin hole connected with the gas supply hole via the gas flow path is mounted on the workpiece holding surface.
Description
Technical field
The present invention relates to electrostatic chuck.
Background technology
Electrostatic chuck mounting table mainly as fixation workpiece in the various operations that semiconductor device is made is used.Here mainly be equivalent to wafer or chopper wheel as workpiece.
Electrostatic chuck also has the heat of following operation to produce to remove effectively from wafer except fixed wafer, the situation that the temperature maintenance of wafer is used in certain purpose.For example, in order to improve the cooling effect of wafer, electrostatic chuck is configured on the cooling device.In addition, with from the purpose that is adsorbed on the wafer draw heat on the electrostatic chuck for the back side to wafer flows into back of the body gas bodies such as helium, on electrostatic chuck, be provided with to be used to carry on the back the pore (for example, with reference to TOHKEMY 2000-315680 communique) that the gas body flows into.But require further to improve the cooling effect of wafer according to purposes.
In the occasion that the wafer mounting is handled with plasma etching etc. on electrostatic chuck, exist to result from and wait stripped inhomogeneities and make rate of etch different tendency on wafer face.As the measure that addresses this problem, require the densification of plasma.
Yet, because the densification of plasma brings the heat absorption of helium to increase,, reduce the distance of metal cooling device and wafer mounting surface so must reduce the thickness of electrostatic chuck, further improve cooling effectiveness.This occasion has near being used to flow into the pore of carrying on the back the gas body situation of puncture takes place, if puncture, then produces the generation of particle and the problem of the damage of handled wafer, the breakage of electrostatic chuck etc. and obviously changes.
Summary of the invention
The purpose of this invention is to provide and to prevent to increase and produce the electrostatic chuck of electric arc along with plasma density.
The electrostatic chuck of the present invention's first mode, use possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that: be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface; In above-mentioned main countersink region, imbed by the arc protection parts that insulating element constituted that are provided with the gas flow path that is communicated with the above-mentioned gas supply hole; In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
The electrostatic chuck of the present invention's second mode, use possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that: be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface; The arc protection parts are imbedded above-mentioned main countersink region, on the surface of above-mentioned arc protection parts, be provided with a plurality of grooves, so that above-mentioned a plurality of grooves become gas flow path when above-mentioned arc protection parts being inserted into above-mentioned main countersink region with definition around the profile of the center line of air inclusion flow direction; In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
The electrostatic chuck of Third Way of the present invention, use possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that: be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface; On above-mentioned electrostatic chuck main body side interarea, possess two criss-cross secondary countersink region that groove constituted that intersect by radial center at above-mentioned arc protection parts, the arc protection parts are imbedded above-mentioned main countersink region, plane a plurality of notchs of keeping straight on the side of the drum of above-mentioned arc protection parts has length direction at each groove of above-mentioned criss-cross secondary countersink region are so that form gas flow path when above-mentioned arc protection parts being inserted above-mentioned main countersink region; In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
The present invention can provide and can prevent to increase along with plasma density and produce the electrostatic chuck of electric arc.
Description of drawings
The section of the electrostatic chuck of Fig. 1 (a) expression execution mode, Fig. 1 (b) are represented from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of the electrostatic chuck of top observation execution mode and cooling device, the stereogram of Fig. 1 (c) expression arc protection parts.
The section of the electrostatic chuck of the variation 1 of Fig. 2 (a) expression execution mode, Fig. 2 (b) represents from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of the electrostatic chuck of the variation 1 of top observation execution mode and cooling device, the stereogram of Fig. 2 (c) expression arc protection parts.
The section of the electrostatic chuck of the variation 2 of Fig. 3 (a) expression execution mode, Fig. 3 (b) represents from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of the electrostatic chuck of the variation 2 of top observation execution mode and cooling device, the stereogram of Fig. 3 (c) expression arc protection parts.
The section of the electrostatic chuck of the variation 2 of Fig. 4 (a) expression execution mode, Fig. 4 (b) represents from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of variation 2 electrostatic chucks of top observation execution mode and cooling device, the stereogram of Fig. 4 (c) expression arc protection parts.
The section of the electrostatic chuck of the variation 3 of Fig. 5 (a) expression execution mode, Fig. 5 (b) represents from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of variation 3 electrostatic chucks of top observation execution mode and cooling device, the stereogram of Fig. 5 (c) expression arc protection parts.
Fig. 6 represents the section of the electrostatic chuck of comparative example, and Fig. 6 (b) represents from the figure of the cooling device side of the joint interface of the electrostatic chuck main body of the electrostatic chuck of top observation comparative example and cooling device.
Fig. 7 represents the cutaway view of existing electrostatic chuck.
Embodiment
Below illustrate execution mode, but the present invention is not limited to following execution mode.Omit explanation for the identical or similar symbol of part note that has identical functions or similar function among the figure.As workpiece, use wafer to describe.
(inventing problem to be solved)
The object of the present invention is to provide the electrostatic chuck of generation of the puncture of the densification that can prevent to follow plasma.
(electrostatic chuck)
The electrostatic chuck 10 of the execution mode shown in Fig. 1 (a), it uses possessing cooling device 1 and be configured on the above-mentioned cooling device 1 and have in the semiconductor-fabricating device of electrostatic chuck main body 2 of workpiece mounting surface, this electrostatic chuck 10 is provided with the gas supply hole 1a that runs through above-mentioned cooling device and extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface, is provided with the diameter main countersink region 1b bigger than gas supply hole 1a at the peristome of gas supply hole 1a; At main countersink region 1b, imbed by the arc protection parts 3 that insulating element constituted that are provided with the gas flow path 3a that is communicated with the gas supply hole; In the workpiece mounting surface, be provided with the pore 2a that is communicated with gas supply hole 1a by gas flow path 3a.Also have, the present invention has omitted diagram for easy to understand, but electrostatic chuck main body 2 and cooling device 1 engage by the splicing tpae that is configured between electrostatic chuck main body 2 and the cooling device 1.The pore number is not specially limited in three.
Consider that from the viewpoint of the cooling effect that improves workpiece the thickness between the workpiece mounting surface of electrostatic chuck main body 2 and the bearing surface of cooling device is preferably below the 3mm, more preferably below the 1.5mm.The a plurality of pore 2a1,2a2, the 2a3 that are arranged on the electrostatic chuck main body 2 are preferably interior below 160 μ m.The material of electrostatic chuck main body 2 is not particularly limited, but from thermal conductivity viewpoint good, that reactant gas is rich in corrosion resistance is considered, preferred aluminium nitride system pottery, contain the composite ceramics of composite material, alumina series pottery, the composite material that contains aluminium oxide, aluminium oxide and the aluminium nitride of aluminium nitride.In addition, carborundum, yittrium oxide or their composite material also can.The material of internal electrode is not particularly limited, so conductivity pottery or metal get final product still preferred refractory metal, the alloy of preferred especially molybdenum, tungsten, molybdenum and tungsten.
As the material of arc protection parts 3, just be not particularly limited as long as guarantee insulating properties, can enumerate high-melting-point insulating ceramicses such as polytetrafluoroethylene thermal endurance fluororesin such as (for example registered trade mark teflons) or aluminium oxide.Consider that from the viewpoint of long-term use as the material of arc protection parts 3, the material that the tendency of use change of shape is little is better, considers from the viewpoint of cooling, use high-melting-point insulating ceramicses such as high aluminium oxide of thermal conductivity or aluminium nitride better.
As joint fastener, be not particularly limited, can use various materials, for example can use allyl resin, silicone resin.In addition, though use bonding agent replace joint fastener also can, the situation of overflowing if consider bonding agent to flow is then preferably used the good adhesive sheet of operation.
About the action effect of the electrostatic chuck 10 of execution mode, with the contrast of electrostatic chuck 110 shown in Figure 7 in describe.
As shown in Figure 7, the occasion that the distance between cooling device 101 and the electrostatic chuck main body 102 is long, the cooling effectiveness of wafer is low, and if apply high voltage then can not improve plasma density, can not satisfy the desired process characteristic.
Here, the present inventor as shown in Figure 1, visualizes the thickness attenuation with electrostatic chuck main body 2 for the density that improves plasma and the cooling effectiveness of wafer.Though reason is unclear, but shorten by the cooling device 1 of double as RF electrode and the distance of wafer mounting surface, produced following problem, promptly, when plasma takes place, think result from that supply hole peristome at back of the body gas body (バ Star Network サ イ De ガ ス) takes place to puncture or the arc trace of glow discharge attached to workpiece on.Puncture and not only to damage cooling device 1, and become the reason of particle or pollution, because the back side (mounting surface) of the wafer of institute's mounting is produced damage, so require to prevent the method that punctures.
This occasion, if the electrostatic chuck of Fig. 7, then because the distance of 102 of cooling device 101 and electrostatic chuck main bodys, gas supply hole 101a space is broad, so by can prevent the generation of electric arc at this spatial configuration potsherd.But, shown in Fig. 1 (a),, then can not guarantee to dispose the space of potsherd, so the method that prevents to puncture generation that will look for novelty if the distance between cooling device 1 and wafer mounting surface is short.
The result of present inventor's absolute sincerity research according to above-mentioned execution mode, by improving the problem relevant with above-mentioned arc trace, can improve the cooling effectiveness of plasma density and wafer.
According to execution mode, by using arc protection parts 3, can on gas supply hole 1a, not produce puncture, the higher plasma of density can take place.Its result for example can obtain in the operation of plasma etching the action effect of processing speed that can faster wafer.
(manufacture method of electrostatic chuck)
As the manufacture method of electrostatic chuck 10, the manufacture method of electrostatic chuck main body 2 for the occasion of aluminium nitride described.
(1) at first, the aluminium nitride ceramics powder is formed the regulation shape and is formed into body.Then, the internal electrode that configuration is made of molybdenum on this formed body.And fill the discoid formed body that aluminium nitride powder is shaped once more and has obtained burying underground internal electrode thereon.The electrostatic attraction electrode of electrostatic chuck 10 in being embedded in electrostatic chuck main body 2 supplied with and to be used to the RF electric power that adsorbs the direct voltage of wafer and be used to produce plasma.
(2) secondly, by this formed body of sintering in nitrogen atmosphere, make the electrostatic chuck main body 2 of having buried internal electrode underground.To can form with the terminal that internal electrode conducts with engaging.Use pore 2a1,2a2, the 2a3 of laser processing method and etching and processing method setting from the wafer mounting surface to the cooling device bearing surface.Though omitted diagram, that a plurality of pores similarly are set is also passable with pore 2a1,2a2,2a3 on electrostatic chuck main body 2.
(3) make cooling device 1, and on cooling device 1, be set to carry on the back the through hole of gas body supply hole 1a.Configuration space and the diameter of supply hole 1a are not particularly limited, but for example are made as the occasion of 300mm at the diameter with cooling device 1, preferably on the circumference of distance outer circumference end 17mm inboard so that the through hole 1a of 23 diameter 1mm roughly uniformly-spaced to be set.Can main countersink region 1b be set chimeric arc protection parts 3 ground the peristome that becomes the gas supply hole with composition surface side surface electrostatic chuck main body 2.Be preferably dimensioned to be diameter 2.5mm, degree of depth 1.3mm in the countersink region of the diameter of gas supply hole 1a being made the occasion of 1mm.
(4) secondly, such arc protection parts 3 shown in the construction drawing 1 (a)～(b).Arc protection parts 3 are embedded among the main countersink region 1b of cooling device 1.
(5) then, engage electrostatic chuck main body 2 and cooling device 1 by joint fastener.
Produced electrostatic chuck 10 by above step.
(variation of execution mode)
As mentioned above, the present invention puts down in writing by execution mode, but the argumentation and the accompanying drawing that should not be construed as a part that constitutes the disclosure limit the present invention.Those skilled in the art can know various replacement execution modes, embodiment and application technology according to the disclosure.Variation as execution mode can be listed below variation.Arc protection parts with different piece are that the center describes.
(variation 1)
According to variation 1, by reducing to carry on the back the flowing space of gas body, thereby be difficult in gas supply hole 1a, produce plasma.Its reason is considered to, although the junction surface of do not flow electrostatic chuck main body 2 and device for cooling 1 by 3 sealings of arc protection parts, increases from hole 2a1, the 2a2 of electrostatic chuck main body 2,2a3 to the creepage distance of cooling device 1.
(variation 2)
(variation 3)
Fig. 5 (a)～(c) expression arc protection parts 43.Shown in Fig. 5 (c), arc protection parts 43 possess two groove 43b that intersected by the radial center at arc protection parts 43 on electrostatic chuck main body 2 side interareas
1, 43b
2The criss-cross secondary countersink region 43b that is constituted.Shown in Fig. 5 (a), when arc protection parts 43 being inserted main countersink region 1b, forming the mode of gas flow path 1c, shown in Fig. 5 (b) like that at the side of drum 43a (43a
1, 43a
2, 43a
3, 43a
4) have plane a plurality of notch 43c that on the length direction of groove 43b1, the 43b2 of criss-cross secondary countersink region 43b, keep straight on
1, 43c
2, 43c
3, 43c
4The diameter of arc protection parts 43 is like that little more satisfactory than the diameter of main countersink region 1b shown in Fig. 5 (b).This be because, by back of the body gas body at side 43a
1, 43a
2, 43a
3, 43a
4Flow with the small space of the inwall of main countersink region 1b and make and in gas supply hole 1a, be difficult to produce plasma, thereby can prevent effectively that electric arc from producing.Have again, if at notch 43c
1, 43c
2, 43c
3, 43c
4And form the space that back of the body gas body flows between the inwall of main countersink region 1b, though then can make the diameter of arc protection parts 43 identical substantially,, preferably make its diameter little than main countersink region 1b in order effectively to prevent electric arc with the diameter of main countersink region 1b.
Arc protection parts 43 according to Fig. 5, be easy to processing with comparing according to the arc protection parts 3 of execution mode and according to the arc protection parts 13,23,33 of its variation, in addition, can play with arc protection parts 3 and according to the same or above arc protection effect of the arc protection parts 13,23,33 of its variation.It is favourable to use the parts of processing difficulties to make under the situation of arc protection parts at needs.
Like this, the present invention comprises here the various execution modes that do not have record etc. certainly.Therefore, technical scope of the present invention is only determined by the specific item of the invention of the scope that relates to scheme according to above-mentioned explanation.
Effect of the present invention is as follows.
According to the present invention, provide the electrostatic chuck of generation of the puncture of the densification that can prevent to follow plasma.
(embodiment)
(manufacturing of electrostatic chuck)
(Production Example 1)
With above-mentioned manufacture method is benchmark has been made Production Example 1 by following condition electrostatic chuck.
(1) made the electrostatic chuck main body 2 of the aluminum of the diameter 300mm, the thickness 1.1mm that are embedded with bipolar electrode.From cooling device 1 side irradiation CO
2Laser (wavelength 10.6 μ m) also is provided with pore 2a1,2a2, the 2a3 of seven diameter 1mm.Though omitted diagram, except pore 2a1,2a2,2a3, also be provided with four pores.
(2) be made as 300mm, the thickness of cooling device 1 is made as 34mm by diameter, the through hole of the 23 diameter 1mm of place is set on the circumference of distance periphery 17mm, thereby has made the cooling device 1 of oxidation aluminum cooling device 1.
(3) be used for the main countersink region 1b of diameter 2.5mm, the degree of depth 1.3mm of chimeric arc protection parts 3 by slotting cutter being provided with in through hole and composition surface side electrostatic chuck main body 2.
(4) produce the arc protection parts 3 that constitute by polytetrafluoroethylene of the shape shown in (a)～(c) that possesses Fig. 1.In addition, in the hurdle of present embodiment, used registered trade name " teflon " as polytetrafluoroethylene.
(5) embed on the main countersink region 1b of cooling device 1 after the arc protection parts 3, the joint fastener by propylene system engages cooling device 1 and electrostatic chuck main body 2 has obtained electrostatic chuck 10.
(Production Example 2,3,4)
The arc protection parts that are made of polytetrafluoroethylene 13,23,33 that possess the shape of Fig. 2 (a)～(c), Fig. 3 (a)～(c), Fig. 4 (a)～(c) except use are replaced the arc protection parts 3, have similarly made electrostatic chuck 11,12,13 with Production Example 1.
(Production Example 5,6,7)
Replace the arc protection parts 3 except use possesses the arc protection parts 13,23,33 that the aluminium oxide by 99% of the shape of Fig. 1 (a)～(c), Fig. 2 (a)～(c), Fig. 3 (a)～(c), Fig. 4 (a)～(c) constitutes, similarly made electrostatic chuck 10 with Production Example 1.
(manufacturing comparative example)
Except not using arc protection parts this point and the shape of cooling device 1 is made the cooling device 201 of Fig. 6 (a) shown in (b), be the electrostatic chuck 210 that benchmark has been made comparative example with the manufacture method of above-mentioned execution mode.
(puncture prevents effect assessment)
(embodiment 1～embodiment 4, comparative example 1)
For in Production Example 1～Production Example 4, make Fig. 1～electrostatic chuck shown in Figure 5 of making in the comparative example, by the condition evaluating shown in the table 1 puncture and prevent effect.
Fig. 1～Fig. 4, each electrostatic chuck shown in Figure 6 are arranged on evaluation with in the vacuum chamber.Then, will be positioned in by the wafer that silicon constitutes on the electrostatic chuck 10, the electrostatic attraction electrode of electrostatic chuck is applied direct voltage and adsorbs wafer.Absorption is applied voltage to be made as+V250/-V250.
Secondly, in the vacuum attraction chamber and gas supply pipe line and reach 0.1Torr (13.3Pa) afterwards, in chamber, supply with the mist of argon (Ar) and helium (He), make cavity indoor pressure reach 1Torr (133Pa).The gas (He) that to control pressure from the outside of chamber supplies to the gas supply hole 1a of electrostatic chuck, as the back of the body gas body of wafer.Back of the body gas body (He) pressure reaches 10Torr (1330Pa) as shown in Figure 1.Here, the back of the body gas body of wafer is meant the gas in the space that forms between wafer that has been adsorbed and electrostatic chuck surface.
Then, between up and down parallel plate electrode (be chamber in be equipped with upper electrode plate, cooling device 1), apply the high frequency voltage of 13.56MHz, (promptly, on the wafer) generation plasma in the space between electrostatic chuck 10 and the upper electrode.Stop to apply after one minute, place after 30 seconds, the cycle that 1 minute plasma will take place again repeats 10 cycles.
Then, with electrostatic potential ground connection and be made as zero volt, wafer is broken away from after, Visual Confirmation has or not puncture.The member of the vestige of oriented chip back surface is evaluated as " having ", will have the member of vestige to be evaluated as " nothing ", comprehensive income to the result be illustrated in the table 1.
Table 1
(embodiment 5～embodiment 8, comparative example 2)
As shown in table 2, be made as 1Torr (133Pa) this point except carrying on the back gas body pressure, estimate puncture similarly to Example 1 and prevented effect.Comprehensive income to the result be illustrated in the table 2.
Table 2
(embodiment 9～embodiment 13, comparative example 3)
As shown in table 3, except the material as the arc protection parts has adopted 99% aluminium oxide this point, estimated puncture similarly to Example 1 and prevented effect.Comprehensive income to the result be illustrated in the table 3.In addition, measure gas flow according to following benchmark.The result of gained gathers expression in table 3.
(assay method of gas flow)
At the pipe arrangement that is communicated with the gas supply hole of gas supply source and electrostatic chuck maskantflowmeter is set midway.And making chamber is vacuum (roughly 0Torr), is determined at the gas flow that flows on electrostatic chuck under the state that does not have loaded with wafers with maskantflowmeter.To carry on the back gas body pressure and be the pressure that 10Torr (1330Pa) is expressed as the gas supply source in table is 10Torr (1330Pa), and back of the body gas body pressure is identical with the pressure of gas supply source when the absorption wafer.If do not adsorb wafer, then in the vacuum of 0Torr, emit gas, there is not back of the body gas body pressure.Have, " SCCM " in the table 3 is standard cc (cm again
3The abbreviation of)/min is illustrated under the latm (atmospheric pressure 1013hPa) flow that is converted into time per unit of uniform temperature (25 ℃).
Table 3
As known from Table 3, enforceable gas flow can be kept and also electric arc can be prevented.Especially, in embodiment 9,13, the gas flow identical and can prevent electric arc with comparative example.
(embodiment 14～embodiment 18, comparative example 4)
As shown in table 4, except having adopted 99% aluminium oxide this point and will carry on the back gas body pressure, the material as the arc protection parts is made as the 1Torr this point, and estimated similarly to Example 1 to puncture and prevented effect.Comprehensive income to the result be illustrated in the table 4.
Table 4
As can be known, the electrostatic chuck with arc protection parts of embodiment does not draw puncture up to the plasma output higher than comparative example shown in table 1～table 4.In addition, as shape, the arc protection parts 13 that possess shape shown in Figure 2 least are easy to generate puncture.
From the contrast of table 1 and table 2 as can be known, if the pressure of back of the body gas body (He) is low, then has with lower plasma output and produce the tendency that punctures.The contrast of table 3 and table 4 also be we can say equally.Even in the low occasion of pressure of back of the body gas body, the electrostatic chuck with arc protection parts of embodiment 1～embodiment 16 also plays a role effectively as can be known.
In addition, after producing first breakdown, if on identical electrostatic chuck, apply plasma voltage, then used the occasion of the arc protection parts that constitute by polytetrafluoroethylene, have with lower plasma output and produce the tendency that punctures, to this, used the occasion of oxidation aluminum arc protection parts, puncture with identical plasma output.This difference is considered to because the thermal endurance of arc protection parts produces.Promptly, the arc protection parts that are made of polytetrafluoroethylene cause change of shape because of puncture, to this, aluminium oxide is considered to shape and changes hardly.Therefore, as more preferably high-melting-point insulating ceramics such as aluminium oxide of the material of arc protection parts.
Claims (9)
1. electrostatic chuck uses possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that:
Be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface;
In above-mentioned main countersink region, imbed by the arc protection parts that insulating element constituted that are provided with the gas flow path that is communicated with the above-mentioned gas supply hole;
In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
2. electrostatic chuck according to claim 1 is characterized in that,
Above-mentioned arc protection parts possess the inwall that is the section taper of concentric circles expansion from the above-mentioned electrostatic chuck main body side of above-mentioned cooling device side direction internal diameter at the above-mentioned gas stream.
3. electrostatic chuck according to claim 1 is characterized in that,
Above-mentioned electrostatic chuck main body side at above-mentioned arc protection parts is provided with the diameter secondary countersink region also littler than the external diameter of above-mentioned arc protection parts, and possesses a plurality of diameters are connected to the above-mentioned gas supply hole of above-mentioned cooling device side interarea than from the bottom surface of above-mentioned secondary countersink region the also little above-mentioned gas stream of internal diameter.
4. electrostatic chuck uses possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that:
Be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface;
The arc protection parts are imbedded above-mentioned main countersink region, on the surface of above-mentioned arc protection parts, be provided with a plurality of grooves, so that above-mentioned a plurality of grooves become gas flow path when above-mentioned arc protection parts being inserted into above-mentioned main countersink region with definition around the profile of the center line of air inclusion flow direction;
In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
5. electrostatic chuck according to claim 4 is characterized in that,
Above-mentioned electrostatic chuck main body side at above-mentioned arc protection parts is provided with the diameter secondary countersink region also littler than the external diameter of above-mentioned arc protection parts.
6. electrostatic chuck uses possessing cooling device and be configured on the above-mentioned cooling device and have in the semiconductor-fabricating device of electrostatic chuck main body of workpiece mounting surface, it is characterized in that:
Be provided with gas supply hole, be provided with the diameter main countersink region bigger than above-mentioned gas supply hole at the peristome of above-mentioned gas supply hole to run through above-mentioned cooling device and to extend from the mode that an interarea of above-mentioned cooling device arrives another interarea surface;
On above-mentioned electrostatic chuck main body side interarea, possess two criss-cross secondary countersink region that groove constituted that intersect by radial center at above-mentioned arc protection parts, the arc protection parts are imbedded above-mentioned main countersink region, plane a plurality of notchs of keeping straight on the side of the drum of above-mentioned arc protection parts has length direction at each groove of above-mentioned criss-cross secondary countersink region are so that form gas flow path when above-mentioned arc protection parts being inserted above-mentioned main countersink region;
In above-mentioned workpiece mounting surface, be provided with the pore that is communicated with the above-mentioned gas supply hole by the above-mentioned gas stream.
7. electrostatic chuck according to claim 6 is characterized in that,
The diameter of above-mentioned arc protection parts is littler than the diameter of above-mentioned main countersink region.
8. according to each described electrostatic chuck in the claim 1～7, it is characterized in that,
The diameter of above-mentioned arc protection parts is that the thickness twice of above-mentioned electrostatic chuck main body is above and below four times.
9. according to each described electrostatic chuck in the claim 1～7, it is characterized in that,
Above-mentioned arc protection parts are made of aluminium oxide or aluminium nitride.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3547008P | 2008-03-11 | 2008-03-11 | |
| US61/035,470 | 2008-03-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101533798A true CN101533798A (en) | 2009-09-16 |
| CN101533798B CN101533798B (en) | 2012-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101273429A Active CN101533798B (en) | 2008-03-11 | 2009-03-10 | Electrostatic chuck |
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| Country | Link |
|---|---|
| JP (1) | JP5331519B2 (en) |
| KR (1) | KR101364656B1 (en) |
| CN (1) | CN101533798B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102646584A (en) * | 2011-02-16 | 2012-08-22 | 株式会社东京精密 | Workpiece dividing device and method for dividing workpiece |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5331519B2 (en) | 2013-10-30 |
| KR101364656B1 (en) | 2014-02-19 |
| CN101533798B (en) | 2012-04-04 |
| KR20090097797A (en) | 2009-09-16 |
| JP2009218592A (en) | 2009-09-24 |
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