CN101533693A - Microwave film resistor, microwave film resistor network module and manufacturing method thereof - Google Patents
Microwave film resistor, microwave film resistor network module and manufacturing method thereof Download PDFInfo
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- CN101533693A CN101533693A CN200910037910A CN200910037910A CN101533693A CN 101533693 A CN101533693 A CN 101533693A CN 200910037910 A CN200910037910 A CN 200910037910A CN 200910037910 A CN200910037910 A CN 200910037910A CN 101533693 A CN101533693 A CN 101533693A
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Abstract
The invention discloses a microwave film resistor and a manufacturing method thereof, and belongs to the field of circuit elements. The microwave film resistor comprises a ceramic substrate, a film resistance layer which is adhered to the upper surface of the ceramic substrate and an electrode layer which is adhered to the film resistance layer. The film resistor has the advantages of high precision, high using frequency and high resistance stability. In addition, the invention also discloses a microwave film resistor network module and a manufacturing method thereof, wherein the microwave film resistor network module is formed by integrating three or more microwave film resistors on one module.
Description
Technical field
The present invention relates to a kind of circuit element, especially relate to a kind of microwave film resistor and a kind of integrated on a module, the microwave film resistor mixed-media network modules mixed-media that makes it to form by several microwave film resistors.
Simultaneously, the invention still further relates to the manufacture method of above-mentioned microwave film resistor and the manufacture method of above-mentioned microwave film resistor mixed-media network modules mixed-media.
Background technology
Resistor is one of passive component that is most widely used in the circuit, mainly plays power supply decoupling, transistor operating bias in circuit, network mates and effect such as grade coupled.Along with electronic product constantly to the development of high frequencyization and miniaturization, require that the resistive element size is more and more littler, frequency of utilization is more and more higher (more than the 20GHz), resistance precision and reliability is more and more higher, the resistance temperature rate of change is ppm/ ℃ of level.
Traditional thin film resistor adopts the form of termination electrode; the two ends that are resistor are wrapped up by electrode; as shown in Figure 1; for example: publication number is CN1507635A; CN1822251A; CN1525498A; CN1918675A; CN1977347A; the electrode form of the resistor of patent disclosure such as CN1524275A and CN101203922A is this resistor of termination electrode and adopts conducting resinl to mount or the alloy soldering paste mounts having under the condition of protective gas; though the assembly automation degree is than higher; but technology is loaded down with trivial details; the series resistance that assembling brings increases, and influences the impedance frequency characteristic of resistor.And, owing to there is termination electrode, making that resistance electrode length is elongated, the resistance lossy microwave increases, and influences microwave property; Owing to there is termination electrode, make that relative area strengthens between the electrode, contain the ceramic dielectric of high dielectric constant simultaneously between the termination electrode, cause the resistor parasitic capacitance to become big, influence the device microwave property.The surface electrode resistor has appearred in this shortcoming at the termination electrode thin film resistor.
Existing surface electrode resistor is the patent of CN1323044A as publication number, though can form surface electrode.But, the manufacture method of this patent is to form the conductor layer pattern earlier, form resistive layer then in the conductor layer gap, there is no resistive layer under the conductor layer, just partly link to each other between conductor layer and the resistive layer by EDGE CONTACT, be easy to open circuit between conductor layer and the resistive layer, this connected mode poor reliability can not satisfy the requirement of high reliability.
Publication number is the patent of CN101295569A, though there is electrode on the surface, but link to each other with the internal electrical resistance layer by plated-through hole, be that whole resistor not only has surface electrode, and also have interior electrode, so not only increased the length of metal, thereby increased stray inductance, and interior electrode is to realize that by through hole technology is numerous and diverse, and causes resistance reliability to descend.
Though publication number is the described resistor of the patent of CN101253631A is surface electrode from see in form, as shown in Figure 2, though the square resistance of this resistance material can reach 900 Ω/, but do not have the excellent microwave characteristic, and need between substrate and resistive layer, insulating barrier be arranged in the preparation process, technology is numerous and diverse.
In addition, the existing attenuator that utilizes active device (as the Pin pipe etc.) to constitute, frequency characteristic is poor, temperature stability is poor, and size is difficult to miniaturization.The attenuator technology that traditional distributed component (as microstrip line, waveguide etc.) constitutes is loaded down with trivial details, and size is huge, and the frequency scope of application is narrow.The attenuator that adopts thick-film technique to make is poor owing to its pattern precision, and frequency of utilization is low, can only reach several GHz at present, and is difficult to satisfy the requirement of high stability, microminiaturization, and the resistor network attenuator microwave property of termination electrode form is bad.
Summary of the invention
Technical problem to be solved by this invention is a kind of reliable height, the simple surface electrode microwave film resistor of technology and manufacture method of providing.This resistor precision height, frequency of utilization height, resistance stability height.
Another one technical problem to be solved by this invention provides a kind of surface electrode microwave film resistor mixed-media network modules mixed-media and manufacture method thereof that is made of above-mentioned a plurality of resistors.This microwave film resistor mixed-media network modules mixed-media pattern precision height, stability of material is good, parasitic parameter is little, and electrode structure is reasonable, and frequency of utilization is wide, the temperature stability excellence, and the reliability excellence can satisfy the requirement of miniaturization simultaneously.
In order to solve first technical problem, the invention provides a kind of microwave film resistor, described microwave film resistor comprises ceramic substrate, be attached to the thin film resistive layer of ceramic substrate upper surface and be attached to electrode layer on the thin film resistive layer.
Wherein, described electrode layer is divided into two or more electrode blocks, is attached on the resistive layer, is connected on same surface by resistive layer between all electrode blocks, plays bonding action and electric action.Ceramic substrate is the carrier of resistor, and the structural strength and the thermolysis of whole element are provided.
Described resistive layer is TaN film or NiCr film.
Described ceramic substrate is alundum (Al ceramic substrate, aluminium nitride ceramics substrate and beryllium oxide ceramics substrate or glass ceramic baseplate.
Preferably described ceramic substrate lower surface has back face metalization layer 1, and metal layer is used for welding.The existence of back face metalization layer can guarantee the welding that element is more firm.
Preferably described back face metalization layer or resistive layer or electrode layer stay limit 5, and conducting resinl is to the influence of electrode or resistance in the time of can reducing assembling.
In order to solve first technical problem, the present invention also provides a kind of manufacture method of microwave film resistor, comprises the steps:
(1), makes some photo etched masks according to product requirement.If do not stay the limit product, then only need a mask; If electrode and resistive layer do not stay the limit, the back face metalization layer stays the limit, then needs two masks; If electrode layer and or resistive layer stay the limit, the back side is Liu Bian or do not have the back face metalization layer not, needs two masks; If electrode layer and or resistive layer stay the limit, metal layer also stays the limit, needs three masks.
(2) electrode is being carried out be pre-formed the surface electrode pattern on the patterned mask, this is to guarantee that the electrode of resistor is the key of surface electrode.
(3) method by reactive sputtering generates the NiCr film at the upper surface generation TaN film of ceramic substrate or the method for sputter;
(4) form one or more layers metal in TaN film or the NiCr film surface method by sputter, form electricity level layer.
(5) if product needed back face metalization layer, then at one or more layers metal of lower surface sputter of ceramic substrate; If product does not need back face metalization, then this step does not need.
(6) the upper surface metal level of the ceramic substrate that step (4) or step (4) and step (5) are obtained carries out graphical treatment.
(7) if the back face metalization layer stays the limit, then the back face metalization layer is also carried out graphical treatment.
(8) plating of the substrate surface metal level after the graphical treatment is thickeied to 3 μ m-5 μ m.
(9) the ceramic substrate upper surface after will electroplating etches TaN film or NiCr thin layer.
(10) if product back face metalization layer stays the limit, then the substrate lower surface is etched and stay the position, limit; If the limit is not stayed at the back side, then this does not need.
(11) if electrode layer or resistive layer stay the limit, then TaN film or NiCr thin layer carry out graphical treatment; If electrode layer and resistive layer all do not stay the limit, then this does not need.
(12) ceramic substrate is carried out cutting-up by the figure that forms, obtain a plurality of thin film resistors, the electrode of thin film resistor is common surface;
(13) product behind the cutting-up is cleaned, dries with acetone, heat-treat or the laser-induced thermal etching processing, obtain final products.
For solving second technical problem of the present invention, the invention provides a kind of microwave film resistor mixed-media network modules mixed-media, it is integrated on a module by the mode of common electrode to be about to the above-mentioned microwave film resistor more than three or three, form "T"-shaped network or " ∏ " l network, or the composite network of "T"-shaped network and " ∏ " l network composition, make it to form surface electrode microwave film resistor mixed-media network modules mixed-media.Described microwave film resistor mixed-media network modules mixed-media is applied to play a part in the microwave circuit attenuator.
In order to obtain a certain size pad value, it is as follows that the resistance of each resistor should satisfy certain relation:
Formula (one)
("T"-shaped network) (" ∏ " l network)
Illustrate:
1) Z
0Be port input and output impedance, for example, be used in 50 ohm of systems as fruit product, then Z
0=50 ohm.
2) the symbol dB attenuator decay central value representing to design.
For solving second technical problem of the present invention, the present invention also provides a kind of manufacture method of microwave film resistor mixed-media network modules mixed-media, and step is as follows:
(1) according to the output requirement of microwave film resistor mixed-media network modules mixed-media, first designing circuit pattern.Form "T"-shaped network by the mode of the resistor more than three or three by common electrode, or " ∏ " l network, or the composite network formed of "T"-shaped network and " ∏ " l network, and the resistance of each resistor is answered coincidence formula ().
(2) according to the circuitous pattern of design, make some photo etched masks; If do not stay the limit product, then only need a mask; If electrode and resistive layer do not stay the limit, the back face metalization layer stays the limit, then needs two masks; If electrode layer and/or resistive layer stay the limit, the back side is Liu Bian or do not have the back face metalization layer not, needs two masks; If electrode layer and or resistive layer stay the limit, metal layer also stays the limit, needs three masks.
(3) electrode is being carried out be pre-formed the surface electrode pattern on the patterned mask, this is to guarantee that the electrode of resistor is the key of surface electrode.
(4) method by reactive sputtering generates the NiCr film at the upper surface generation TaN film of ceramic substrate or the method for sputter;
(5) form one or more layers metal in TaN film or the NiCr film surface method by sputter.
(6) if product needed back face metalization layer, then at one or more layers metal of lower surface sputter of ceramic substrate; If product does not need back face metalization, then this step does not need.
(7) the upper surface metal level of the ceramic substrate that step (4) or step (4) and step (5) are obtained carries out graphical treatment.
(8) if the back face metalization layer stays the limit, then the back face metalization layer is also carried out graphical treatment.
(9) the substrate surface metal level after the graphical treatment is electroplated thickening 3 μ m-5 μ m thickness.
(10) the ceramic substrate upper surface after will electroplating etches TaN film or NiCr thin layer.
(11) if product back face metalization layer stays the limit, then the substrate lower surface is etched and stay the position, limit; If the limit is not stayed at the back side, then this does not need.
(12) if electrode layer or resistive layer stay the limit, then TaN film or NiCr thin layer carry out graphical treatment; If electrode layer and resistive layer all do not stay the limit, then this does not need.
(13) ceramic substrate is carried out cutting-up by the figure that forms, obtain a plurality of microwave film resistor mixed-media network modules mixed-medias, the electrode of this module is common surface.
(14) product behind the cutting-up is cleaned, dries with acetone, then heat-treat or the laser-induced thermal etching processing, obtain final products.
The microwave film resistor of technical solution of the present invention and mixed-media network modules mixed-media resistor advantage thereof are as follows:
(1) because two electrode blocks of resistor or plural electrode block on same upper surface, adopt gold wire bonding technology to carry out electric interconnection, reduce the resistor lossy microwave, assembly technology is simple and cost is more moderate.Therefore and the parasitic capacitance that produces can be ignored simultaneously, because what adopt is the form of surface electrode, the electrode relative area is very little, and medium is the little air of dielectric constant; Spun gold and electrode are finished bonding after utilizing technologies such as ultrasonic wave to melt altogether, and the contact resistance that this kind technology is brought also can be ignored, and has reduced the resistor lossy microwave;
(2) the electrode plane formula resistor back side is not electrode, so assembling the time can be adopted cheap binding agent, can utilize assembly machine to finish assembling fast, has reduced the cost of assembly technology and has simplified assembly technology.
(3) owing to be resistive layer below the electrode, electrode invests on the resistive layer, and the phenomenon that does not have disconnection between electrode and the resistance takes place, therefore, and the reliability height.
(4) this thin film resistor mixed-media network modules mixed-media can play the effect of attenuator in circuit, the employing thin-film technique is made, the pattern precision height, stability of material is good, parasitic parameter is little, electrode structure is reasonable, frequency of utilization super wide (DC-20GHz), the temperature stability excellence, the reliability excellence can satisfy the requirement of miniaturization simultaneously.Minimum dimension can reach the EIA0402 dimensional standard, and accuracy value can be up to ± 0.1dB at band segment.
(5) resistance precision can be up to ± 5%.Resistance has good high frequency characteristics, and frequency of utilization is up to 20GHz.Resistance has high stability, serviceability temperature scope-55 ℃～+ 150 ℃, and the resistance temperature variation coefficient is no more than ± 125ppm/ ℃.
Description of drawings
Fig. 1-existing end electricity level resistor schematic diagram; (contain front view and vertical view, down together.)
Fig. 2-existing surface electrode resistor schematic diagram;
Fig. 3-embodiment of the invention 1 electrode layer, resistive layer and back face metalization layer all do not stay the microwave film resistor schematic diagram on limit;
Fig. 4-embodiment of the invention 1 electrode layer and resistive layer do not stay the limit, and the back face metalization layer stays the microwave film resistor schematic diagram on limit;
Fig. 5-embodiment of the invention 2 electrode layers, resistive layer and back face metalization layer all stay the microwave film resistor schematic diagram on limit;
Fig. 6-embodiment of the invention 2 electrode layers and back face metalization layer do not stay limit, resistive layer to stay the microwave film resistor schematic diagram on limit;
Fig. 7-embodiment of the invention 2 electrode layers and back face metalization layer do not stay limit, resistive layer to stay the microwave film resistor schematic diagram on limit;
Fig. 8-embodiment of the invention 2 electrode layers and resistive layer do not stay limit, back face metalization layer to stay limit microwave film resistor schematic diagram;
Fig. 9-embodiment of the invention 3 electrode layers, resistive layer and back face metalization layer all have the microwave film resistor schematic diagram that stays the limit;
Figure 10-embodiment of the invention 4 electrode layers and resistive layer all do not stay the limit, the microwave film resistor schematic diagram of back face metalization layer are arranged;
Figure 11-embodiment of the invention 4 electrode layers and resistive layer all have the microwave film resistor schematic diagram that stays limit, no back face metalization layer;
Figure 12-embodiment of the invention 5 electrode layers and resistive layer all stay the limit, and the microwave film resistor schematic diagram of back face metalization layer is arranged;
Figure 13-embodiment of the invention 6 electrode layers and resistive layer all stay the limit, and the back face metalization layer does not stay the microwave film resistor network module schematic diagram on limit;
Figure 14-embodiment of the invention electrode layer and resistive layer stay the limit, and the back face metalization layer does not stay limit microwave film resistor network module schematic diagram;
Figure 15-embodiment of the invention 7 electrode layers, resistive layer and back face metalization layer all stay the microwave film resistor network module schematic diagram on limit;
Figure 16-embodiment of the invention 8 electrode layers and resistive layer stay the limit, the microwave film resistor network module schematic diagram of no metal layer;
Figure 17-embodiment of the invention 9 electrodes and resistive layer stay the limit, and the back face metalization layer does not stay the microwave film resistor network module schematic diagram on limit;
Figure 18-"T"-shaped resistor network and " ∏ " shape resistor network circuit diagram.
Embodiment
At thickness is that 0.381mm, purity are that the method for upper surface by reactive sputtering of 99.6% alundum (Al substrate generates one deck TaN film, Au in the lower surface sputter of TaN film surface and ceramic substrate then, then (selecting the mask 1 of 0201 size for use) carried out graphically on the TaN/Au surface, by electroplating the Au layer is thickeied to 3 μ m again, the TaN layer is exposed in etching, last carry out cutting-up, clean that to obtain dimensions be 0201 the thin film resistor product that does not all stay the limit, as shown in Figure 3 according to the dimension of picture that obtains.Or according to the dimension of picture that obtains carry out cutting-up, cleaning obtains electrode layer and resistive layer does not stay the limit, it is 0201 thin film resistor that the back face metalization layer stays the dimensions on limit, as shown in Figure 4.Product is tested after 10 minutes 400 ℃ of heat treatments, and 98% product resistance value is calculated by 50 Ω scale values between 48.5～52.0 Ω, and its precision can reach ± and 5%.In-55 ℃～+ 150 ℃ temperature ranges the resistance temperature variation coefficient is measured, the resistance temperature variation coefficient is 85ppm/ ℃.Measure at network analyzer, its frequency of utilization can reach 21.5GHz.
At thickness is 0.508mm, the method that purity is 99.6% alundum (Al substrate upper surface by reactive sputtering generates layer of Ni Cr film, TiW alloy in the lower surface sputter of NiCr layer and ceramic substrate then, Ni and Au, then to NiCr/TiW/Ni/Au surface graphics (selecting the mask 2 of 0402 size for use), by electroplating the Au layer is thickeied to 4 μ m again, erode to the NiCr layer, then to NiCr layer patternization (0402 size mask 3, resistance length-width ratio 2.0:1), erode to and stay the position, limit to expose ceramic substrate, the dimension of picture that last basis obtains carries out cutting-up, it is 0402 electrode layer that cleaning obtains dimensions, resistive layer and back face metalization layer all stay the thin film resistor product on limit, as shown in Figure 5.Or carry out cutting-up, clean that to obtain dimensions be that 0402 electrode layer and resistive layer stay the limit according to the dimension of picture that obtains, the back face metalization layer does not stay the thin film resistor product on limit, as shown in Figure 6.Or carry out cutting-up, clean that to obtain dimensions be that 0402 electrode layer and back face metalization layer do not stay limit, resistive layer to stay the thin film resistor product on limit according to the dimension of picture that obtains, as shown in Figure 7.Or carry out cutting-up, clean that to obtain dimensions be that 0402 electrode layer and resistive layer do not stay limit, back face metalization layer that the thin film resistor product that stays the limit is arranged according to the dimension of picture that obtains, as shown in Figure 8.400 ℃ of heat treatments 10 minutes, 94.3% product resistance value was calculated by 100 Ω scale values between 96.6～104.3 Ω with product, and its precision can reach ± and 5%.
At thickness is 0.381mm, purity is that the method for upper surface by reactive sputtering of 99.6% aluminium nitride substrate generates one deck TaN film, sputtered with Ti W alloy and Au on the lower surface of TaN film and ceramic substrate then, then TaN/TiW/Au and TiW/Au surface are carried out graphical treatment (selecting the mask 4 and 5 of 0201 size for use), by electroplating the Au layer is thickeied to 5 μ m again, etching is exposed the TaN layer up to upper surface, lower surface stays the position, limit to expose ceramic layer, then the TaN layer is carried out graphically (0201 size mask 6, resistance length-width ratio 1.5:1) and etching up to staying the position, limit to expose ceramic substrate, the dimension of picture that last basis obtains carries out cutting-up, it is 0201 thin film resistor product that cleaning obtains dimensions, this product electrode layer, resistive layer and back face metalization layer all stay the limit, as shown in Figure 9.400 ℃ of heat treatments 10 minutes, 95.2% product resistance value can reach 75 Ω ± 2% with product.
At thickness is the method generation one deck TaN film of the glass ceramic baseplate upper surface of 0.508mm by reactive sputtering, TiW alloy in the lower surface sputter of TaN layer and ceramic substrate then, Ni and Au, then to TaN/TiW/Ni/Au surface graphics (selecting the mask 7 of 0402 size for use), by electroplating the Au layer is thickeied to 3 μ m again, corrosion is to exposing the TaN layer, then the TaN layer is carried out graphically (0402 size mask 8, resistance length-width ratio 2.0:1), the dimension of picture that last basis obtains carries out cutting-up, it is 0402 electrode layer that cleaning obtains dimensions, resistive layer does not all stay the thin film resistor product on limit, as shown in Figure 10.Or carry out cutting-up, clean that to obtain dimensions be that 0402 electrode layer has the thin film resistor product that stays limit, resistive layer to have to stay the limit according to the dimension of picture that obtains, as shown in Figure 11.400 ℃ of heat treatments 10 minutes, 95.6% product resistance value was calculated by 100 Ω scale values between 97.6～102.3 Ω with product, and its precision can reach ± and 5%.Resistance value is not carried out the laser-induced thermal etching resistance trimming at 100 Ω ± 5% with interior product handle, resistance value all can be adjusted in 100 Ω ± 5%.
At thickness is 0.381mm, purity is that the method for upper surface by reactive sputtering of 99.6% beryllium oxide ceramics substrate generates one deck TaN film, TiW/Au in the sputter of TaN film surface then, then graphical treatment (selecting the mask 9 of 0201 size for use) is carried out on the TaN/TiW/Au surface, again Au is electroplated and thicken to 3 μ m, etching is exposed the TaN layer up to upper surface, then to graphical (the 0201 size mask 10 of TaN, resistance length-width ratio 1.5:1), and etch into and stay the position, limit to expose ceramic substrate, the dimension of picture that last basis obtains carries out cutting-up, it is 0201 resistor product that cleaning obtains dimensions, there is not metal layer below the ceramic substrate of this product, electrode layer and resistive layer all stay the limit, as shown in Figure 12.400 ℃ of heat treatments 10 minutes, 96.5% product resistance value was calculated by 75 Ω scale values between 71.85～78.35 Ω with product, and its precision can reach ± and 5%.
Embodiment 6
According to product requirement, three film resistors are designed to common electrode " ∏ " shape type of attachment, and the resistance value of the resistance value of two pin of " ∏ " shape and the 3rd resistance is 1:1:2.917, and designs and produces out photo etched mask 11 and photo etched mask 12 according to this.
At thickness is that 0.508mm, purity are that the method for upper surface by reactive sputtering of 99.6% alundum (Al substrate generates one deck TaN film, TiW alloy, Ni and Au in the lower surface sputter of TaN layer and ceramic substrate then, then to TaN/TiW/Ni/Au graphical (selecting the mask 11 of 0805 size for use), by electroplating the Au layer is thickeied 4 μ m again, corrosion is to exposing the TaN layer again, then to TaN layer patternization (0805 size mask 12), and erode to and stay the position, limit to expose pottery.Last carry out cutting-up, clean that to obtain dimensions be 0805 resistor network module according to the dimension of picture that obtains, this product electrode layer and resistive layer all stay the limit, and the back face metalization layer does not stay the limit, as shown in figure 13.400 ℃ of heat treatments 10 minutes, the pad value of 92.7% product was pressed the 7.0dB scale value and is calculated between 6.98～7.08dB with product, and its precision can reach ± 0.1dB.
Embodiment 7
According to product requirement, three film resistors are designed to common electrode " ∏ " shape type of attachment, and the resistance value of two pin of " ∏ " shape and the resistance value of the 3rd resistance are 1:1:2.917, product is of a size of 1206, design and produce out photo etched mask 15 and photo etched mask 16 and 17 according to this, wherein photo etched mask 15 and 16 is respectively applied for ceramic substrate is carried out photoetching in two surfaces up and down.
At thickness is 0.635mm, the method of upper surface by sputter of glass ceramic baseplate generate layer of Ni Cr film, TiW alloy in the lower surface sputter of NiCr layer and ceramic substrate then, Ni and Au, then to NiCr/TiW/Ni/Au and/TiW/Ni/Au superficial layer respectively graphical (selecting the mask 15 and 16 of 1206 sizes for use), by electroplating the Au layer is thickeied 4 μ m again, upper surface being etched into NiCr layer lower surface stays the position, limit to etch into glass-ceramic layer again, then to NiCr layer patternization (1206 size mask 17), and etch into ceramic layer, the dimension of picture that last basis obtains carries out cutting-up, cleaning obtains electrode layer and resistive layer stays the limit, the back face metalization layer does not stay the limit, dimensions is 1206 resistor network module, as shown in figure 14.Or carry out cutting-up, clean and to obtain electrode layer, resistive layer and back face metalization layer all to stay the limit dimensions be 1206 resistor network modules according to the dimension of picture that obtains, as shown in figure 15.400 ℃ of heat treatments 10 minutes, the pad value of 92.7% product was pressed the 5.0dB scale value and is calculated between 4.98～5.08dB with product, and its precision can reach ± 0.1dB.
Embodiment 8
According to product requirement, three film resistors are designed to the "T"-shaped type of attachment of common electrode, and the resistance value of the resistance value of "T"-shaped two arms and the 3rd resistance is 1:1:5.871, and product is of a size of 1206, designs and produces out photo etched mask 13 and 14 according to this.
At thickness is 0.635mm, purity is that the method for upper surface by reactive sputtering of 99.6% alundum (Al ceramic substrate generates one deck TaN film, TiW alloy and Au in sputter on the TaN film then, then to TaN/TiW/Au surface graphics (selecting the mask 13 of 1206 sizes for use), by electroplating the Au layer is thickeied to 4 μ m again, corrosion is to exposing the TaN layer again, then TaN layer patternization (1206 size mask 14) is also corroded to exposing pottery, the dimension of picture that last basis obtains carries out cutting-up, cleaning obtains electrode layer and resistive layer stays the limit, no metal layer dimensions is 1206 resistor network module, as shown in figure 16.400 ℃ of heat treatments 10 minutes, the pad value of 91.6% product was pressed the 5.0dB scale value and is calculated between 4.98～5.08dB with product, and its precision can reach ± 0.1dB.
Embodiment 9
According to product requirement, four film resistors are designed to the composite network figure of common electrode " ∏ " shape and "T"-shaped composition.When wherein three resistance were connected to " ∏ " shape, the resistance value of the resistance value of two pin and the 3rd resistance was 1:1:2.917; When wherein three resistance are connected to when "T"-shaped, the resistance value of the resistance value of "T"-shaped two arms and the 3rd resistance is 1:1:5.871.Design and produce out photo etched mask 18 and photo etched mask 19 according to this.
At thickness is 1.0mm, purity is that the method for upper surface by reactive sputtering of 99.6% aluminium nitride substrate generates one deck TaN film, TiW alloy in TaN layer and the sputter of ceramic substrate lower surface then, Ni and Au, then the TaN/TiW/Ni/Au superficial layer is carried out graphically (selecting the mask 18 of 1206 sizes for use), by electroplating the Au layer is thickeied 5 μ m again, corrosion is to exposing the TaN layer, then the TaN layer is carried out graphically (1206 size mask 19), and erode to and stay the position, limit to expose pottery, the dimension of picture that last basis obtains carries out cutting-up, it is 1206 resistor composite network module that cleaning obtains dimensions, this mixed-media network modules mixed-media electrode and resistive layer stay the limit, the back face metalization layer does not stay the limit, as shown in figure 17.400 ℃ of heat treatments 10 minutes, when this resistor network connected measurement by " ∏ ", the pad value of 92.7% product was between 6.98～7.08dB with product, and its precision can reach 7.0 ± 0.1dB; When by "T"-shaped connection, 91.26% product pad value is between 4.91～5.08dB, and its precision can reach 5.0 ± 0.10.1.
Claims (10)
1, a kind of microwave film resistor, it is characterized in that: comprise ceramic substrate, be attached to the thin film resistive layer of ceramic substrate upper surface and be attached to electrode layer on the thin film resistive layer, described electrode layer is divided into two or more electrode blocks, be attached on the resistive layer, be connected on same surface by resistive layer between the electrode block.
2, microwave film resistor according to claim 1 is characterized in that: described resistive layer is TaN film or NiCr film.
3, microwave film resistor according to claim 2 is characterized in that: described ceramic substrate is alundum (Al ceramic substrate, aluminium nitride ceramics substrate, beryllium oxide ceramics substrate or glass ceramic baseplate.
4, according to the arbitrary described microwave film resistor of claim 1-3, it is characterized in that: described electrode layer or resistive layer one deck at least stay the limit.
5, microwave film resistor according to claim 4 is characterized in that: described ceramic substrate lower surface has the back face metalization layer.
6, microwave film resistor according to claim 5 is characterized in that: described back face metalization layer stays the limit.
7, a kind of manufacture method of microwave film resistor is characterized in that comprising the steps:
(1), makes an above photo etched mask according to product requirement;
(2) electrode is being carried out be pre-formed the surface electrode pattern on the patterned mask;
(3) method by reactive sputtering generates the NiCr film at the upper surface generation TaN film of ceramic substrate or the method for sputter;
(4) form one or more layers metal in TaN film or the NiCr film surface method by sputter, form electrode layer;
(5) the upper surface metal level of the ceramic substrate that step (4) is obtained carries out graphical treatment;
(6) plating of the substrate surface metal level after the graphical treatment is thickeied to 3 μ m-5 μ m;
(7) the ceramic substrate upper surface after will electroplating etches TaN film or NiCr thin layer;
(8) ceramic substrate is carried out cutting-up by the figure that forms, obtain a plurality of thin film resistors, the electrode of thin film resistor is common surface;
(9) product behind the cutting-up is cleaned, dries with acetone, heat-treat or the laser-induced thermal etching processing, obtain microwave film resistor.
8, the manufacture method of a kind of microwave film resistor according to claim 7 is characterized in that: between step (4)-step (5), also comprise step: at one or more layers metal of lower surface sputter of ceramic substrate and carry out graphical treatment.
9, a kind of microwave film resistor mixed-media network modules mixed-media, it is characterized in that: integrated on a module more than three or three as the mode of the arbitrary described microwave film resistor of claim 1-5 by common electrode, form "T"-shaped network or " ∏ " l network, or the composite network of "T"-shaped network and " ∏ " l network composition.
10, a kind of manufacture method of microwave film resistor mixed-media network modules mixed-media, it is characterized in that: as the manufacture method of the arbitrary described microwave film resistor of claim 7-8, before first step, output requirement according to the microwave film resistor mixed-media network modules mixed-media, the "T"-shaped network of elder generation's designing circuit pattern, or " ∏ " l network, or the composite network of "T"-shaped network and " ∏ " l network composition.
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