CN101517676B - Chip-type filter - Google Patents
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- CN101517676B CN101517676B CN2007800349453A CN200780034945A CN101517676B CN 101517676 B CN101517676 B CN 101517676B CN 2007800349453 A CN2007800349453 A CN 2007800349453A CN 200780034945 A CN200780034945 A CN 200780034945A CN 101517676 B CN101517676 B CN 101517676B
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Abstract
A chip-type filter comprises a stacked body formed by stacking a plurality of capacitor elements, a pair of anode terminals, a pair of cathode terminals, an insulating exterior resin, and an inductor portion. The stacked body includes a first group of the capacitor elements and a second group of the capacitor elements, the respective anode portions of which are disposed on the opposite sides of the central cathode portion. The anode terminals are electrically connected to the respective anode portions of the first and second groups of the capacitor elements. The cathode terminals are electrically connected to the cathode portion of the stacked body and disposed at both ends in a direction intersecting the direction in which the anode terminals are connected to each other. The inductor portion is insulated from the cathode portion and links the anode terminals to each other.
Description
Technical field
The present invention relates to comprise with electroconductive polymer as solid electrolyte and with the corresponding chip shape of mounted on surface solid electrolytic capacitor, constitute the chip-type filter (チ Star プ shape Off イ Le タ) of pi type filter.
Background technology
Be accompanied by the high frequencyization of electronic equipment, for as the capacitor of one of electronic unit impedance operator that also requires at high-frequency region compared with the past.In order to tackle such requirement, design the solid electrolytic capacitor that the various electroconductive polymers that electrical conductivity is high are used as solid electrolyte.
In addition, in recent years, for needing small-sized, high capacity strongly at employed solid electrolytic capacitors such as the CPU of personal computer peripheries.In addition, strong request and high frequencyization reduce equivalent series resistance (low ESRization) accordingly, and remove in order to improve noise, indicial response and the equivalent series resistance that reduces (hanging down ESLization).In order to tackle such requirement, various researchs have been carried out.
Fig. 8 A～Fig. 8 D is the vertical view cutaway drawing of representing the structure of chip shape solid electrolytic capacitor in the past, main cutaway view, upwarding cutaway view and the upward view looked.Each capacitor element 21 has the anode bodies (not shown) that is formed by valve metals.On the surface of anode bodies, carry out surface roughening, form dielectric oxide film thereon (not shown) then.Preposition at anode bodies is provided with insulation division (not shown), and this insulation division is separated into anode portion 22 and negative electrode formation portion (not shown) with anode bodies.On the dielectric oxide film thereon of negative electrode formation portion, stack gradually be formed with the solid electrolyte layer that forms by electroconductive polymer, by the cathode layer (all not shown) that carbon and silver-colored paste form, be formed with negative pole part 23.Capacitor element 21 constitutes tabular.
Duplexer 24 is by constituting with the stacked polylith capacitor element 21 of mode that alternately sets in the opposite direction.Positive wire framework 25 engages with anode portion 22 in the duplexer 24 and is one.Cathode wire framework 26 engages with negative pole part 23 in the duplexer 24 and is one.
Joint has positive wire framework 25 on anode terminal 27.Two ends at the Width of anode terminal 27 are provided with thin part 27B, remove middle body outside the thin part 27B and form the 27A of anode terminal portion when installing.Joint has cathode wire framework 26 on cathode terminal 28.Two ends at the Width of cathode terminal 28 are provided with thin part 28B, remove middle body outside the thin part 28B and form the 28A of cathode terminal portion when installing.
Outer dress resin 29 one of insulating properties cover duplexer 24, positive wire framework 25, cathode wire framework 26, anode terminal 27 and cathode terminal 28.The thin part 27B, the 28B that are arranged at anode terminal 27, cathode terminal 28 are respectively also covered by outer dress resin 29 one.So below the installed surface of chip shape solid electrolytic capacitor, the 27A of anode terminal portion each other, the 28A of cathode terminal portion exposes at 2 relative positions separately from each other.That is, this chip shape solid electrolytic capacitor has 4 terminal constructions.
In the chip shape solid electrolytic capacitor that constitutes like this,, make by the magnetic flux that electric current produced that between each terminal, flows and cancel each other by 4 terminal constructions.Therefore can reduce ESL significantly.In addition, by with approaching as much as possible circulation (loop) area that reduces electric current of the distance between each terminal, can further reduce ESL (for example patent documentation 1).
Yet,, when forming pi type filter, also can produce unnecessary resistive component (composition), inductive component at access path at external inductor even use such solid electrolytic capacitor.Its result, it is big that impedance becomes.
Patent documentation 1: No. 7215533 specification of United States Patent (USP)
Summary of the invention
The present invention is the chip-shaped filter that can realize Low ESRization by further low ESLization, low ESRization.Chip-shaped filter of the present invention comprises: stacked a plurality of capacitor elements and the duplexer that constitutes, a pair of anode terminal, a pair of cathode terminal, the outer dress resin of insulating properties, and inductor portion.Capacitor element has anode portion and negative pole part respectively, and is stacked at negative pole part.Duplexer comprises the 1st group capacitor element and the 2nd group capacitor element, and anode portion separately is that center configuration is in an opposite side with the negative pole part.Anode terminal is electrically connected with the anode portion of the 1st group capacitor element and the anode portion of the 2nd group capacitor element respectively.Cathode terminal is electrically connected with the negative pole part of duplexer, and is configured in respectively and the two ends that are connected the direction that anode terminal direction each other intersects.Outer dress resin covers described duplexer under the state that the part of the part of anode terminal and cathode terminal is exposed.Inductor portion and negative pole part insulation, and connect anode terminal each other.The chip-type filter of Gou Chenging like this has 4 terminal constructions that anode terminal and cathode terminal expose respectively at 2 the relative positions below installed surface.By this structure, reduced the ESL that causes by access path, and made by the magnetic flux that electric current produced that between each terminal, flows and cancel each other and reduced ESL significantly.And then anode terminal is connected by inductor portion each other, constitutes pi filter by parts.Its result can reduce the impedance of filter significantly.
Description of drawings
Figure 1A is the vertical view cutaway drawing of the chip-type filter in the embodiments of the present invention.
Figure 1B is that the master of the chip-type filter shown in Figure 1A looks cutaway view.
Fig. 1 C is the side view cutaway drawing of the chip-type filter shown in Figure 1A.
Fig. 1 D is the upwarding cutaway view of the chip-type filter shown in Figure 1A.
Fig. 1 E is the upward view of the chip-type filter shown in Figure 1A.
Fig. 1 F is the partial cut-out stereogram of the capacitor element in the chip-type filter shown in Figure 1A.
Fig. 1 G is the equivalent circuit diagram of the chip-type filter shown in Figure 1A.
Fig. 2 is other the upward view of chip-type filter in the embodiments of the present invention.
Fig. 3 is other other the upwarding cutaway view of chip-type filter in the embodiments of the present invention.
Fig. 4 is other other the upward view of chip-type filter in the embodiments of the present invention.
Fig. 5 is other other the upwarding cutaway view of chip-type filter in the embodiments of the present invention.
Fig. 6 A is other other the vertical view cutaway drawing of chip-type filter in the embodiments of the present invention.
Fig. 6 B is that the master of the chip-type filter shown in Fig. 6 A looks cutaway view.
Fig. 6 C is the upwarding cutaway view of the chip-type filter shown in Fig. 6 A.
Fig. 7 A is other other the vertical view cutaway drawing of chip-type filter in the embodiments of the present invention.
Fig. 7 B is that the master of the chip-type filter shown in Fig. 7 A looks cutaway view.
Fig. 7 C is the side view cutaway drawing on the Y1-Y1 line of the chip-type filter shown in Fig. 7 A.
Fig. 7 D is the side view cutaway drawing on the Y2-Y2 line of the chip-type filter shown in Fig. 7 A.
Fig. 7 E is the upwarding cutaway view of the chip-type filter shown in Fig. 7 A.
Fig. 7 F is the upward view of the chip-type filter shown in Figure 1A.
Fig. 8 A is the vertical view cutaway drawing of chip shape solid electrolytic capacitor in the past.
Fig. 8 B is that the master of the chip shape solid electrolytic capacitor shown in Fig. 8 A looks cutaway view.
Fig. 8 C is the upwarding cutaway view of the chip shape solid electrolytic capacitor shown in Fig. 8 A.
Fig. 8 D is the upward view of the chip shape solid electrolytic capacitor shown in Fig. 8 A.
Symbol description
1: capacitor element 1A: duplexer
2: anode portion 3: negative pole part
4,4A, 4B: positive wire framework 5: cathode wire framework
5A: guide wall 6: anode terminal
6A, 71A: portion of terminal 6B, 6D, 6E, 6F: inductor portion
6C, 7A, 71B, 72A: bending part 7,71,72: cathode terminal
8: adorn resin 30 outward: anode bodies
31: dielectric oxide film thereon 32: insulation division
33: solid electrolyte layer 34: cathode layer
41: cell 71C: connecting portion
101,102: combined capacity 103,104: equivalent series inductance component
105,106: the equivalent series resistance component
Embodiment
Figure 1A～Fig. 1 E represents the structure of the chip-type filter in the embodiments of the present invention.Figure 1A is a vertical view cutaway drawing, and Figure 1B is that the master on the X-X line of Figure 1A looks cutaway view, and Fig. 1 C is the side view cutaway drawing on the Y-Y line of Figure 1A, and Fig. 1 D is the upwarding cutaway view on the Z-Z line of Figure 1B, and Fig. 1 E is a upward view.In addition, Fig. 1 F is the partial cut-out stereogram of the capacitor element 1 in this chip-type filter.
Shown in Fig. 1 F, capacitor element 1 has the anode bodies 30 that is formed by valve metals such as aluminium.Preposition at anode bodies 30 is provided with insulation division 32, and this insulation division 32 is separated into anode portion 2 and negative electrode formation portion (not shown) with anode bodies 30.Surface in the negative electrode formation portion of anode bodies 30 is carrying out being formed with dielectric oxide film thereon 31 after surface roughening is handled.On dielectric oxide film thereon 31, stack gradually be formed with the solid electrolyte layer 33 that forms by electroconductive polymer, by the cathode layer 34 that carbon and silver-colored paste form, be formed with negative pole part 3.Capacitor element 1 constitutes tabular.
Shown in Figure 1B, alternately set in the opposite direction mode at negative pole part 3 stacked a plurality of capacitor elements 1 with anode portion 2, constitute duplexer 1A.That is, the capacitor element 1 that disposes anode portion 2 in Figure 1A on the right side constitutes the 1st group, and the capacitor element 1 that disposes anode portion 2 in the left side constitutes the 2nd group.And it is an opposite side at center that the anode portion 2 of the 1st group capacitor element 1 is configured in negative pole part 3 with the anode portion 2 of the 2nd group capacitor element 1.Figure 1B has represented that as an example capacitor element 1 is 6 a situation, but unqualified to number.As long as the 1st group, the 2nd group is made of 1 above capacitor element 1 respectively.
Shown in Figure 1A～Fig. 1 C, a pair of positive wire framework 4 is combined as a whole respectively with the anode portion 2 that is positioned at the two ends of duplexer 1A.That is, be wound with positive wire framework 4, anode portion 2 bindings are combined with anode portion 2 by electric resistance welding etc. in the periphery of anode portion 2.In addition, cathode wire framework 5 be engaged in via not shown conductive silver paste the central authorities that are positioned at duplexer 1A negative pole part 3 below.Guide wall 5A is arranged at the two ends of cathode wire framework 5 respectively.That is, guide wall 5A be set at be connected the direction that anode terminal 6 direction each other intersects on the two ends of cathode wire framework 5.The inner face of guide wall 5A is electrically connected with negative pole part 3 via the conductive silver paste.
Shown in Figure 1A～Fig. 1 D, a pair of anode terminal 6 be engaged in respectively positive wire framework 4 below.Overlook, the part of anode terminal 6 prolongs in the outstanding modes of dress resin 8 outside described later, and its prolongation is bending and be provided with bending part 6C upward along the side of external packing resin 8.Anode terminal 6 is connected to the anode portion 2 of the 1st group capacitor element 1 and the anode portion 2 of the 2nd group capacitor element 1 via positive wire framework 4.
A pair of cathode terminal 7 is engaged in the following two ends of cathode wire framework 5 respectively.That is, cathode terminal 7 is electrically connected on the negative pole part 3 of the central authorities that are positioned at duplexer 1A via cathode wire framework 5, is disposed at respectively and the two ends that are connected the direction that anode terminal 6 direction each other intersects.Overlook, the part of cathode terminal 7 to be prolonging from outer dress resin 8 outstanding modes, and its prolongation is bending and be provided with bending part 7A upward along the side of outer dress resin 8.
The outer dress resin 8 of insulating properties covers the part of positive wire framework 4, cathode wire framework 5, anode terminal 6 and the part of cathode terminal 7 integratedly.Below installed surface, the portion of terminal 6A of anode terminal 6 exposes at 2 relative positions respectively, and cathode terminal 7 exposes at 2 relative positions respectively.That is, adorn resin 8 outward, under the state that exposes as the part of the face of installed surface at least as the part of the face of installed surface and cathode terminal 7 at least of anode terminal 6, cover duplexer 1A.
Like this, this filter has 4 terminal constructions.8 coverings can not exposed in appearance thereby inductor portion 6B is adorned resin outward.
In the chip-type filter in the present embodiment that constitutes like this, the portion of terminal 6A that is arranged at each anode terminal 6 is connected by inductor portion 6B each other.The equivalent electric circuit of this structure is illustrated among Fig. 1 G.The composite value of the electric capacity of a plurality of capacitor elements 1 contained in the 1st group of anode portion 2 is for example disposed in combined capacity 101 expression on the right side in Figure 1A.On the other hand, combined capacity 102 is illustrated in the composite value that the left side disposes the electric capacity of a plurality of capacitor elements 1 contained in the 2nd group of anode portion 2.The anode-side of combined capacity 101,102 is connected with the two ends of inductor portion 6B respectively.Form pi type filter like this.
By this filter is installed, generate respectively 101,102 that connect with each combined capacity, by the equivalent series inductance component 103,104 and the equivalent series resistance component 105,106 of access path generation.Yet it is interior and integrated that inductor portion 6B and duplexer 1A are built in 1 packaging body in the present embodiment.Therefore, be that the solid electrolytic capacitor shown in Fig. 8 A～Fig. 8 D is compared when forming pi type filter with inductor element with the similar structure of use and Figure 1A～Fig. 1 E, equivalent series inductance component 103,104 and equivalent series resistance component 105,106 diminish.In addition, anode portion 2 is alternately set in the opposite direction and constitute duplexer 1A, anode terminal 6 exposes respectively at 2 relative positions of installed surface with cathode terminal 7 and constitutes 4 terminal constructions.Therefore, make by the magnetic flux that electric current produced that between each terminal, flows and cancel each other and equivalent series inductance component 103,104 is reduced significantly.Its result realizes low ESRization, low ESLization as filter, can Low ESRization.
In addition, the part of anode terminal 6, cathode terminal 7 is extended and the bending and be provided with bending part 6C, 7A upward along the side of outer dress resin 8.By this structure, not only when brazing operation, form the soldering pin easily, and can be from top affirmation brazing state.Therefore the credibility of brazing operation improves.
In addition, in the present embodiment, the example that uses stacked 6 capacitor elements 1 to constitute capacitor element is illustrated, but the present invention is not limited thereto.The stacked number of capacitor element 1 is as long as suitably determine accordingly that with needed specification stacked number also can be an odd number.Yet, by stacked number is made as even number, can be with cancelling each other, so more preferably by the magnetic flux that electric current produced that in each capacitor element 1, flows.In addition, in the present embodiment, anode portion 2 is alternately set in the opposite direction and constitute duplexer 1A, but the present invention is not limited thereto.Also anode portion 2 can be set in the opposite direction at random and constitute duplexer 1A.Yet, constitute duplexer 1A in the opposite direction by anode portion 2 is alternately set, the path of current that flows in each capacitor element 1 becomes more symmetrical, so magnetic flux more effectively cancel each other, so preferred.
In addition, in the present embodiment, the downside that inductor portion 6B is configured in duplexer 1A is the installed surface side, but the present invention is not limited thereto.As long as with inductor portion 6B be provided with negative pole part 3 insulation of capacitor element 1, connect simultaneously between the 6A of pair of terminal portion, inductor portion 6B can be configured in the upside of duplexer 1A, also can be configured in capacitor element 1 each other.Inductor portion 6B also is embedded in the outer dress resin 8 under these circumstances.
In addition, preferably inductor portion 6B and anode terminal 6 are constituted one.Thus, equivalent series inductance component 103,104 and equivalent series resistance component 105,106 further diminish.
Next, describe for chip-type filter with structure different with the structure of Figure 1A～Fig. 1 E.Fig. 2 is other the upward view of chip-type filter in the embodiments of the present invention.In this structure, the part of inductor portion 6D is being exposed below installed surface, and this point is different with Fig. 1 E.At this moment, the part of inductor portion 6D also is embedded in the outer dress resin 8.That is, the opposite side of exposing face of inductor portion 6D is embedded in the outer dress resin 8.Basic structure in addition and Figure 1A～Fig. 1 E is same.
In this structure, inductor portion 6D exposes, so thermal diffusivity improves.In addition, when anode terminal 6 constituted one with inductor portion 6D, portion of terminal 6A and inductor portion 6D constituted same plane.Therefore, inductor portion 6D forms than inductor portion 6B easily.For example, when forming inductor portion 6B, need carry out etching from top and bottom in that metal material is carried out etching.On the other hand, when forming inductor portion 6D, only get final product from last facet etch.Therefore control thickness accurately, and can simplify working process.On the other hand, if as Fig. 1 E, inductor portion 6B integral body is embedded in the outer dress resin 8, favourable aspect the long-term credibility relevant with influence, the environmental impact of external magnetic field.
Next, describe having heteroid chip-type filter in addition.Fig. 3 is other other the upwarding cutaway view of chip-type filter in the embodiments of the present invention.In this structure, inductor portion 6E has serpentine shape, and this point is different with Fig. 1 D.Basic structure in addition and Figure 1A～Fig. 1 E is same.
In this structure,, the degree of freedom of the inductance value variation of inductor portion 6E is increased by forming the inductor portion 6E of serpentine shape.Therefore, can easily carry out the control of resistance value.
In addition, inductor portion 6E is represented by the serpentine shape of rectangle in Fig. 3, but also can be the serpentine shape of curve.Except that serpentine shape, also can be for example will in a plane, connect double-helical shape perhaps, also double helix can be configured in the Different Plane it is connected to each other.That is, as long as the current path of inductor portion 6E is longer than anode terminal 6 distance each other.
In addition also can be as shown in Figure 4, same with the structure of Fig. 2, the inductor portion 6E of serpentine shape is being exposed below installed surface.According to such structure,, also can play by the resulting effect of the structure of Fig. 2 except by the resulting effect of the structure of Fig. 3.
Next, the chip-type filter with different in addition structures is described.Fig. 5 is other other the upwarding cutaway view of chip-type filter in the embodiments of the present invention.
In this structure, cathode terminal 71 is made as one with the 71A of pair of terminal portion, bending part 71B and connecting portion 71C and constitutes, and this point is different with Fig. 1 D.Connecting portion 71C engaged with the following of cathode wire framework 5.Bending part 71B with the part of cathode terminal 71 with overlook from outer dress resin 8 outstanding modes prolong and with this prolongation along the side of outer dress resin 8 upward bending form.Connecting portion 71C is that target terminal 71 carries out Bending Processing and forms.Basic structure in addition and Figure 1A～Fig. 1 E is same.In this structure, components number reduces, and assembles and also can shorten man-hour.
Next, the chip-type filter with different in addition structures is described.Fig. 6 A is other other the vertical view cutaway drawing of chip-type filter in the embodiments of the present invention.Fig. 6 B is that the master on the X-X line of Fig. 6 A looks cutaway view, and Fig. 6 C is the upwarding cutaway view on the Z-Z line of Fig. 6 A.In this structure, a pair of cathode terminal 72 directly engages respectively with the following two ends of the negative pole part 3 of the central authorities that are positioned at duplexer 1A.The part of cathode terminal 72 prolongs to overlook from outer dress resin 8 outstanding modes in addition, and this prolongation is bending and form bending part 72A upward along the side of outer dress resin 8.Structure in addition and Figure 1A～Fig. 1 E is same.In this structure, there is not cathode wire framework 5, so can cut down components number and assemble man-hour.Access path shortens in addition, so can reduce unnecessary equivalent series inductance separation 103,104 and equivalent series resistance component 105,106.
In addition, though not shown, also can not use positive wire framework 4 and anode portion 2 directly is connected with anode terminal 6.That is, also can be with anode portion 2 each other by directly combinations such as electric resistance weldings.Also can cut down components number this moment.In addition, access path shortens, so can reduce unnecessary equivalent series inductance component 103,104 and equivalent series resistance component 105,106.
Yet, as Figure 1A～Fig. 1 C, use positive wire framework 4, have the cathode wire framework 5 of guide wall 5A, stacked easily, connect capacitor element 1.
In addition, as shown in Figure 5, cathode terminal 71 has the structure of 71A of pair of terminal portion and connecting portion 71C, also can be combined with the structure that inductor portion 6D as shown in Figure 2 exposes.In addition, also can be combined with the structure of the inductor portion 6E that has serpentine shape as shown in Figure 3.And then, also can be combined with the structure that the inductor portion 6F of serpentine shape as shown in Figure 4 exposes.Under any circumstance can both have effect concurrently by both structure generations.
In addition, shown in Fig. 6 A to 6C, cathode terminal 72 directly is engaged in the structure at the two ends of negative pole part 3 respectively, also can be combined with the structure that inductor portion 6D as shown in Figure 2 exposes.In addition, also can be combined with the structure of the inductor portion 6E that has serpentine shape as shown in Figure 3.And then, also can be combined with the structure that the inductor portion 6F of serpentine shape as shown in Figure 4 exposes.Under any circumstance can both have effect concurrently by both structure generations.By each figure that will represent in the present embodiment like this intrinsic textural association, can have effect separately concurrently.
Next, the different structure to duplexer 1A describes.Fig. 7 A～Fig. 7 F represents other other the structure of chip-type filter in the embodiments of the present invention.Fig. 7 A is a vertical view cutaway drawing, and Fig. 7 B is that the master on the X-X line of Fig. 7 A looks cutaway view, and Fig. 7 C is that cutaway view is looked in the left side on the Y1-Y1 line of Fig. 7 A, and Fig. 7 D is that cutaway view is looked on the right side on the Y2-Y2 line of Fig. 7 A.Fig. 7 E is the upwarding cutaway view on the Z-Z line of Fig. 7 B, and Fig. 7 F is a upward view.
In this structure, with capacitor element 1 neat stacked a plurality of and composed component unit 41 on same direction.In Fig. 7 B～Fig. 7 D as an example, with the stacked and composed component unit 41 of 3 capacitor elements 1.A plurality of cells 41 of Gou Chenging are with stacked with anode portion 2 alternate configurations mode in the opposite direction separately like this.As an example, that 2 cells 41 are stacked in Fig. 7 B～Fig. 7 D.Form duplexer 1A like this.In this structure, the capacitor element 1 of the cell 41 of upside constitutes first group, and the capacitor element 1 of the cell 41 of downside constitutes second group.In addition, for anode portion 2 is engaged with anode terminal 6, and be provided with positive wire framework 4A, 4B.By electric resistance welding etc. they are engaged.In addition, positive wire framework 4A, 4B are not must obligato parts, anode portion 2 directly can be engaged with anode terminal 6 yet.Form cell 41 by stacked so a plurality of capacitor elements 1, operation and assembly precision improve.
In addition, in the present embodiment, the example of composed component unit 41 is illustrated to using stacked 3 capacitor elements 1, but the present invention is not limited thereto.The stacked number of capacitor element 1 is as long as suitably determine accordingly with needed specification, operation.In addition, the stacked number of plies of cell 41 also can be an odd number, but by the stacked number of plies is made as even number, can makes by the magnetic flux that electric current produced that flows in each capacitor element 1 and cancel each other.So more preferably.
In addition, shown in Fig. 7 A～Fig. 7 F, the structure that duplexer 1A is made of a plurality of cells 41 also can be combined with the structure separately of using Fig. 2～Fig. 6 C explanation.In addition also can be with in the said structure combined more than 2.Under any circumstance can both have effect concurrently by both structure generations.By each figure that will represent in the present embodiment like that as mentioned above intrinsic textural association, can have effect separately concurrently.
Next, the result who specifically the ESL characteristic of the chip-type filter in the present embodiment is estimated is illustrated in the table 1.The structure of each embodiment is as shown in table 1.The length of the negative pole part 3 of the capacitor element 1 that uses in the filter of each embodiment is 4mm, and width is 3mm, and thickness is 0.15mm, and rated capacity is 37 μ F.Use 6 such capacitor elements 1 to constitute length and be 4.3mm, thickness filter as 2.0mm as 7.3mm, width.In addition, the length of inductor portion 6B, 6D is 5.3mm, and the length of inductor portion 6E, 6F is 15.6mm.
In addition, table 1 is also represented the measurement result of comparative example No.25.Comparative example is that the solid electrolytic capacitor with the structure shown in Fig. 8 A～Fig. 8 D externally is connected with inductor element and the pi type filter that constitutes.
Table 1
As known from Table 1, the chip-type filter in the present embodiment can both be reduced to ESL below 1/6 of product in the past.In addition, its change is also less, so for also can fully tackling with the corresponding relative present higher requirement of high frequency.
In addition, when the embodiment No.1 of the structure that will have Fig. 1 D (the inductor portion 6B of linearity) compared with the embodiment No.3 of the structure with Fig. 3 (rivulose inductor portion 6E), the latter's ESL was less.So this is because the inductance value increase of inductor portion 6E can be reduced the impedance of high-frequency region.Same tendency also can be seen in No.2 and No.4, No.5 and No.7, No.6 and No.8 etc.
In addition, when the embodiment No.1 of the structure that will have Figure 1A, Figure 1B, Fig. 1 D (having cathode wire framework 5) compared with the embodiment No.9 of the structure with Fig. 6 A～Fig. 6 C (not having cathode wire framework 5), the latter's ESL was less.So this is because do not use cathode wire framework 5 can reduce unnecessary equivalent series inductance component.Same tendency also can be seen in No.2 and No.10, No.3 and No.11, No.4 and No.12 etc.
Chip-type filter of the present invention can reduce ESR, ESL significantly, and its result has the effect that realizes Low ESRization, and is special useful in the field that requires high frequency response etc.
Claims (14)
1. chip-type filter wherein, comprising:
Duplexer, this duplexer comprises the 1st group that is made of at least 1 flat capacitor element with anode portion and negative pole part, with stacked and the 2nd group of constituting of the flat capacitor element that will 1 has anode portion and negative pole part at least, the described negative pole part of the described negative pole part of described the 1st group capacitor element and described the 2nd group capacitor element is stacked, with described negative pole part is the center, and the described anode portion of described the 1st group capacitor element is configured in an opposite side of the described anode portion of described the 2nd group capacitor element;
A pair of anode terminal, this a pair of anode terminal are electrically connected with the described anode portion of described the 1st group capacitor element and the described anode portion of described the 2nd group capacitor element respectively;
A pair of cathode terminal, this a pair of cathode terminal is electrically connected with described the 1st group, the described negative pole part of the 2nd group capacitor element, and is configured in respectively and the two ends that are connected the direction that described a pair of anode terminal direction each other intersects;
The outer dress resin of insulating properties, the state that the outer dress resin of this insulating properties exposes with the part of the part of described anode terminal and described cathode terminal covers described duplexer; With
Inductor portion, the described negative pole part insulation of this inductor portion and described the 1st group, the 2nd group capacitor element, and connect described a pair of anode terminal.
2. chip-type filter as claimed in claim 1, wherein: each of each of described the 1st group capacitor element and described the 2nd group capacitor element is alternately laminated.
3. chip-type filter as claimed in claim 1, wherein: the number of described the 1st group capacitor element is identical with the number of described the 2nd group capacitor element.
4. chip-type filter as claimed in claim 1, wherein:
Each of described the 1st group capacitor element is by directly stacked and form cell, each of described the 2nd group capacitor element be by directly stacked and form other cell, and the cell of the cell of described the 1st group capacitor element and described the 2nd group capacitor element is stacked and constitute described duplexer.
5. chip-type filter as claimed in claim 4, wherein: the positive wire framework that also comprises the anode portion of the described cell of constriction.
6. chip-type filter as claimed in claim 1, wherein: the part of described inductor portion is exposed on the installed surface of described chip-type filter.
7. chip-type filter as claimed in claim 1, wherein: the current path of described inductor portion is than the distance between the described a pair of anode terminal.
8. chip-type filter as claimed in claim 1, wherein: described a pair of cathode terminal forms as one by being arranged on the connecting portion between described inductor portion and the described negative pole part.
9. chip-type filter as claimed in claim 1, wherein: also comprise the cathode wire framework that engages and engage with the described negative pole part of the central authorities that are positioned at described duplexer with described a pair of cathode terminal.
10. chip-type filter as claimed in claim 9, wherein: with direction that the direction that is connected described a pair of anode terminal intersects on the two ends of described cathode wire framework, be provided with the guide wall that is electrically connected with described negative pole part.
11. chip-type filter as claimed in claim 1, wherein: described a pair of cathode terminal is arranged direct joint of described negative pole part.
12. chip-type filter as claimed in claim 1, wherein: also comprise a pair of positive wire framework, this antianode lead frame engages with described anode portion and makes the described anode portion at the two ends be positioned at described duplexer be combined as a whole respectively, and is connected respectively with the described pair of terminal portion of described anode terminal.
13. chip-type filter as claimed in claim 1, wherein: the dress resin prolongs highlightedly outside described overlooking under the state respectively for the part of described anode terminal and the part of described cathode terminal, and adorns the side bending upward of resin along described outside.
14. chip-type filter as claimed in claim 1, wherein:
Described capacitor element has the anode bodies that is formed by valve metals and is arranged on the described anode bodies and described anode bodies is separated into the insulation division that described anode portion and negative electrode form portion;
Described negative pole part comprises described negative electrode formation portion, be formed at the surface of described negative electrode formation portion dielectric oxide film thereon, be formed at the solid electrolyte layer that forms by electroconductive polymer on the described dielectric oxide film thereon and be formed at the cathode layer that forms by carbon and silver-colored paste on the described solid electrolyte layer.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006255589A JP5040230B2 (en) | 2006-09-21 | 2006-09-21 | Chip type solid electrolytic capacitor |
| JP255589/2006 | 2006-09-21 | ||
| JP2006283350A JP5040255B2 (en) | 2006-10-18 | 2006-10-18 | Chip type solid electrolytic capacitor |
| JP283350/2006 | 2006-10-18 | ||
| PCT/JP2007/068112 WO2008035684A1 (en) | 2006-09-21 | 2007-09-19 | Chip-type filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101517676A CN101517676A (en) | 2009-08-26 |
| CN101517676B true CN101517676B (en) | 2011-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007800349453A Active CN101517676B (en) | 2006-09-21 | 2007-09-19 | Chip-type filter |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5040230B2 (en) |
| CN (1) | CN101517676B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI492254B (en) | 2010-12-28 | 2015-07-11 | Ind Tech Res Inst | Decoupling device |
| TWI443698B (en) * | 2012-09-13 | 2014-07-01 | Ind Tech Res Inst | Decoupling device and fabricating method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041716Y2 (en) * | 1979-03-29 | 1985-12-19 | 日立コンデンサ株式会社 | solid electrolytic capacitor |
| JPS62104435U (en) * | 1985-12-20 | 1987-07-03 | ||
| JP4524873B2 (en) * | 1999-12-10 | 2010-08-18 | 株式会社村田製作所 | Multilayer solid electrolytic capacitor |
| JP2001185460A (en) * | 1999-12-27 | 2001-07-06 | Matsushita Electric Ind Co Ltd | Solid electrolytic capacitor and its manufacturing method and substrate of an integrated circuitfor it |
| JP2001267141A (en) * | 2000-03-15 | 2001-09-28 | Ngk Insulators Ltd | Low-pass filter |
| WO2006077906A1 (en) * | 2005-01-24 | 2006-07-27 | Matsushita Electric Industrial Co., Ltd. | Chip type solid electrolytic capacitor |
-
2006
- 2006-09-21 JP JP2006255589A patent/JP5040230B2/en active Active
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2007
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101517676A (en) | 2009-08-26 |
| JP5040230B2 (en) | 2012-10-03 |
| JP2008078370A (en) | 2008-04-03 |
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