CN101501833A - Device for supporting substrate - Google Patents
Device for supporting substrate Download PDFInfo
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- CN101501833A CN101501833A CNA2007800294501A CN200780029450A CN101501833A CN 101501833 A CN101501833 A CN 101501833A CN A2007800294501 A CNA2007800294501 A CN A2007800294501A CN 200780029450 A CN200780029450 A CN 200780029450A CN 101501833 A CN101501833 A CN 101501833A
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- substrate
- noncontact
- guide
- contact guidance
- guidance spare
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a device for supporting a substrate which selectively and uniformly treats both the front surface of a substrate on which a pattern is formed and the back surface of a substrate on which a pattern is not formed. The device for supporting a substrate comprises a non-contact guide part supplying gas toward the substrate to float the substrate by a predetermined space, an elevation part supporting the non-contact guide part, the elevation part lifting up or down the non-contact guide part in a vertical direction, a contact guide part fixing the substrate on the upper part, the contact guide part being an annular shape to surround the non-contact guide part and being disposed concentrically with the non-contact guide part, and a rotation part supporting and rotating the contact guide part. The contact guide part supports the substrate when the non-contact guide part is positioned lower than the contact guide part, and the substrate floats above the non-contact guide part when the non-contact guide part is positioned higher than the contact guide part, and thus the front and back surface of the substrate can be selectively treated.
Description
Technical field
[1] the present invention relates to the device of supporting substrate (as wafer, LCD, PDP etc.).Particularly, the present invention relates to the device of supporting substrate, it can rely on the use Lift Part to raise selectively or reduce the noncontact guide or use rotatable parts to rotate contact guidance spare and the front and back of treatment substrate.
Background technology
[2] in order to make semiconductor device, thereby need be used to make substrate forms semiconductor device on this substrate technology, and in this technology, repeat depositing operation and photoetching process etc.In order to make acquisition high accuracy and high finished product rate in the semiconductor device according to this technology, the etching of substrate and cleaning are extremely important, and in carrying out this technology, need the device of supporting substrate.
[3] common, as cleaning device, this workbench is by being immersed in substrate this on-chip residue of cleaning material cleaning that utilizes in the bathtub wherein with a kind of wet workbench.Yet the shortcoming of this wet workbench is: introduce cross pollution between substrate, the two sides of substrate causes that all by chemical treatment etching is inconsistent, and TAT (turnaround time) is big, and can not select to handle which surface.
[4] Zhuan Zhi development trend be the substrate of larger diameter and microcircuit so that reduce cost, and, therefore more and more widely use single-wafer processor owing to introduce new material with the performance that device is provided, the defective of compensation batch device.The benefit of single-wafer processor is that each equipment can select to handle which face, but its shortcoming is the processor that must equip the processor that is used for the treatment substrate front respectively and be used for the treatment substrate back side.
[5] Fig. 1 and 2 explanation is used for the device of supporting substrate, and it can treatment substrate upper surface and lower surface.As shown in Figure 1, the conventional equipment that is used for supporting substrate is equipped with chuck (10), a plurality of holes (32 that first gas (inert gas) is provided are installed on it, 40,42), and thereby this device provides this this substrate of first gas (A) to float on this chuck and be made as rotatable situation simultaneously from a plurality of nozzles that are formed on the described chuck, and provides the substrate Treatment Solution from last towards the substrate (A) that rotates, and therefore handles the upper surface of this substrate.
[6] the traditional device that is used for supporting substrate in Fig. 1 and 2 explanation can float the processing that substrate carries out front and back by utilizing inert gas; Yet its shortcoming is that it can not carry out two-sided processing.
[7] meanwhile, the problem of traditional Bernoulli Jacob's chuck is that in order to float substrate, it must provide gases at high pressure, and therefore this damage the high aspect-ratio pattern of this substrate.In addition, its problem is not form consistent temperature at whole substrate surface, so the temperature of substrate edge is lower than the temperature of substrate center, promptly it has the edge cooling effect.
[8] mechanical chuck, centrifugal force chuck and the magnetic force chuck of having used at traditional device that is used for supporting substrate is described respectively in Fig. 3 to 5.Mechanical chuck supports this substrate by using one or more pins at an upper portion thereof.Centrifugal force chuck wherein has S clevis tool, and utilization is fixed the centre of described anchor clamps and relied on centrifugal force to come supporting substrate.In magnetic force chuck, a magnet is attached to the bottom of anchor clamps, the form of these anchor clamps and this centrifugal force chuck identical, and the centrifugal force that is produced when this magnet raises from bottom to top supports this substrate.Yet, use the device of these chuck support substrates, front that can treatment substrate and two-sided, but the back side of substrate can not be handled equably.
Summary of the invention
[9] the purpose of this invention is to provide a kind of device of supporting substrate, it is front, the back side and two-sided of treatment substrate selectively.
[10] another object of the present invention provides a kind of device that is used for supporting substrate, and it can prevent that the non-patterned side of substrate is polluted in the patterned side process of treatment substrate.
[11] another object of the present invention provides a kind of device that is used for supporting substrate, and it does not need to have high density gas to float substrate and not have the edge cooling effect in the non-patterned side processing procedure of substrate.
Description of drawings
[12] Fig. 1 is the cutaway view according to the device of the supporting substrate of routine techniques, and it is the upper surface and the lower surface of treatment substrate simultaneously.
[13] Fig. 2 is the vertical view of chuck (10) of the device of supporting substrate shown in Figure 1.
[14] Fig. 3 is the cutaway view of the mechanical chuck of routine.
[15] Fig. 4 is the cutaway view of the centrifugal force chuck of routine.
[16] Fig. 5 is the cutaway view of the magnetic force chuck of routine.
[17] Fig. 6 is the cutaway view according to the device of the supporting substrate of one embodiment of the invention.
[18] Fig. 7 is the vertical view according to the contact guidance spare of one embodiment of the invention.
[19] Fig. 8 is the vertical view according to the noncontact guide of one embodiment of the invention.
[20] Fig. 9 is a structure chart of describing the contact guidance spare structure of Fig. 7.
[21] Figure 10 is the stereogram of upper surface of the contact guidance spare of key diagram 7.
[22] Figure 11 is the contact guidance spare rotor of Fig. 7 and the stereogram of lower body.
[23] Figure 12 is the vertical view of upper surface of the noncontact guide of Fig. 8.
[24] Figure 13 is the vertical view of lower surface of the noncontact guide of Fig. 8.
[25] Figure 14 is the vertical view that the noncontact guide of the porous plate of layout plan 8 on it is described.
[26] Figure 15 is the stereogram of fluid supply opening of the noncontact guide of Figure 12.
[27] Figure 16 is the cutaway view of explanation according to the structure of the Lift Part of one embodiment of the invention and rotatable parts.
[28] Figure 17 is the stereogram of explanation according to the rotatable parts part of one embodiment of the invention.
[29] Figure 18 describes according to one embodiment of the invention, when the front of treatment substrate or front and back, and the figure of the motion of Lift Part, contact guidance spare and noncontact guide.
[30] Figure 19 describes according to one embodiment of the invention, when the back side of treatment substrate, and the figure of the motion of Lift Part and noncontact guide.
[31] Figure 20 be explanation according to one embodiment of the invention, when the front of treatment substrate or front and back, the cutaway view of the method for supporting substrate.
[32] Figure 21 illustrates according to one embodiment of the invention, when the treatment substrate back side, and the cutaway view of the method for supporting substrate.
Embodiment
[33] device characteristic according to supporting substrate of the present invention is that it comprises: provide gas this substrate is floated the noncontact guide of predetermined distance to substrate; Support the Lift Part of this noncontact guide, this Lift Part is in the vertical direction rising or reduce this noncontact guide; This substrate is fixed on the contact guidance spare on top, this contact guidance spare for annular so that the noncontact guide is concentric is provided with around this noncontact guide and with this; With the rotatable parts that support and rotate this contact guidance spare, wherein when this noncontact guide being made as when being lower than this contact guidance spare, this contact guidance spare supports this substrate, and is made as when being higher than this contact guidance spare when this noncontact guide, and this substrate floats on this noncontact guide.Therefore, the front of this substrate, front and the back side and the back side can be handled selectively by the single assembly that uses supporting substrate.
[34] further, this contact guidance spare is characterised in that it comprises: a plurality of support pin, it is arranged as annular on the upper surface of this contact guidance spare, when this contact guidance spare supports this substrate, these a plurality of support pin are made as and are higher than this noncontact guide top, and when this substrate floats on this noncontact guide, be made as and be lower than this noncontact guide, with a plurality of guide pins, it is being arranged on upper surface of this contact guidance spare outside these a plurality of support pin, and the contacts side surfaces of these a plurality of guide pins and this substrate is to fix this substrate.This support pin and guide pin can separate or one.
[35] in various embodiments of the invention, this contact guidance spare can be the centrifugal force chuck shown in Fig. 4.Form the annular brace post of hollow in the middle of this contact guidance spare is included in, and a plurality of anchor clamps are hinged on this support column.Each anchor clamps that has connection on top utilize the protuberance of tight adhesion on this top of this substrate edge, simultaneously, utilization is taken this substrate of clamping by centrifugal force to the bottom of these anchor clamps of the opposite direction inclination in this contact guidance spare center when this contact guidance spare rotates.
[36] in another embodiment of the present invention, this contact guidance spare can be a magnetic force chuck as shown in Figure 5.In the middle of being included in, this contact guidance spare forms the annular brace post of hollow; A plurality of anchor clamps, it is hinged on this support column and in this bottom has magnet; A plurality of magnets have the polarity identical with above-mentioned magnet, and these a plurality of magnets are positioned on this support column, the position corresponding with the bottom of these anchor clamps; And cylinder, in conjunction with described a plurality of magnets with up and down the motion.Each anchor clamps that has connection on this top utilize the protuberance of tight adhesion on this top of this substrate edge, simultaneously, utilize when the magnet that is located at this bottom moves upward by the bottom of repulsion to these anchor clamps of the reversed dip at this contact guidance spare center, and this substrate of clamping.
[37] meanwhile, the porous plate of this noncontact guide comprises one or more plectanes that have different-diameter and be provided with one heart.These one or more plectanes can have the hole of a plurality of same sizes or the hole of a plurality of different sizes.Therefore, this noncontact guide can utilize low-pressure inert gas to float this substrate, prevents to damage in the positive high aspect-ratio pattern that forms of this substrate when handling this substrate back, and prevents that the back side of this substrate when this substrate of processing positive from being polluted.
[38] desirable is that the diameter in these a plurality of holes is 1～1000 μ m.When the diameter in these holes was in described scope, this noncontact guide provided the filtration of capturing impurity in the inert gas.
[39] and, the fluid supply opening of this noncontact guide in the middle of further being included in, and this one or more plectanes center at least a portion of this fluid support mouth (fluid support port).This fluid supply opening is cylindrical and comprises a plurality of fluid supply tubes road therein, and these a plurality of pipelines are insulated by insulating material.Therefore, can handle the front and back of this substrate simultaneously handling this substrate to provide fluid by the back side when positive to this substrate.
[40] this noncontact guide can be circle or polygon.
[41] further, described substrate support device comprises first quill shaft and second quill shaft of arranged concentric, wherein this first quill shaft is included in this second quill shaft, the diameter of this first quill shaft is less than the diameter of this second quill shaft, wherein this first quill shaft is risen in vertical direction by Lift Part or descends to raise or to reduce this noncontact guide, the bottom of this first quill shaft is connected to this noncontact guide of upper support of Lift Part and this first quill shaft, and wherein this second quill shaft is rotated to rotate this contact guidance spare in the horizontal direction by rotatable parts, and the bottom of this second quill shaft is connected to this contact guidance spare of upper support of these rotatable parts and this second quill shaft.
[42] meanwhile, substrate support device according to another embodiment of the present invention comprises: the noncontact guide, provide gas so that this substrate is floated predetermined distance by nozzle ring to this substrate, wherein nozzle ring is configured on the upper surface of this noncontact guide; Support the Lift Part of this noncontact guide, this Lift Part is in the vertical direction rising or reduce this noncontact guide; This substrate is fixed on the contact guidance spare on this top, this contact guidance spare for annular so that the noncontact guide is concentric is provided with around this noncontact guide and with this; With the rotatable parts that support and rotate this contact guidance spare, wherein this contact guidance spare supports this substrate when being lower than this contact guidance spare when this noncontact guide is made as, this noncontact guide is made as when being higher than this contact guidance spare, and this substrate floats on this noncontact guide.
[43] further, the noncontact guide according to one embodiment of the invention provides gas this substrate floated predetermined distance and to comprise one or more plectanes that have different-diameter and be provided with one heart by a plurality of holes to this substrate.These one or more plectanes can have the hole of a plurality of same sizes or the hole of a plurality of different sizes.Desirable is that the diameter in these a plurality of holes is 1～1000 μ m.Fluid supply opening in the middle of this noncontact chuck further is included in, and these one or more plectanes are around at least a portion of this fluid support mouth.This fluid supply opening is cylindrical and comprises a plurality of fluid supply tubes road therein, and wherein these a plurality of pipelines are insulated by insulating material.
[44] this running of the present invention and advantage are by following public embodiment and distinct.Below, the desirable embodiment according to the device of the supporting substrate of one embodiment of the invention is described with reference to the accompanying drawings.
[45] at first, according to the general structure of Fig. 6 description according to the device of the supporting substrate of one embodiment of the invention.
[46] as shown in Figure 6, comprise according to the device of the supporting substrate of one embodiment of the invention: noncontact chuck (106), it provides gas to float this substrate by one or more porous plates with a plurality of holes; Elevation cylinder body (113), it supports this noncontact chuck and raises or reduce it in vertical direction; Contact chuck (101), the support pin (103) that comprises guide pin (102) and fix this substrate; And rotatable parts, comprising rotation motor (112), it rotates this contact chuck (101).
The device more detailed description of supporting substrate of the present invention is disclosed [47].
[48] Fig. 7 to 15 explanation is according to the contact chuck (101) and the noncontact chuck (106) of one embodiment of the invention.
[49] shown in Fig. 7 and 8, this contact chuck (101) is an annular, has hollow at intermediate shaft part, and this noncontact chuck (106) is circular, its diameter contacts the inner hollow of chuck (101) less than this, thus the inner hollow that this noncontact chuck (106) passes this contact chuck (101).
[50] Fig. 9 to 11 is the structure charts that specifically describe the contact chuck structure of Fig. 7.As Fig. 9 and 10, this contact chuck (101) is made of upper body (201), rotor (202) and lower body (203).This upper body (201) surface thereon and is that a plurality of guide pins are constructed a plurality of holes along diameter greater than the circumference of the diameter of the circumference of fixing this support pin along the fixing a plurality of support pin (103a, 103b, 103c) of the circumference with constant diameter.This rotor (202) comprises that (102c), its orientation is that a plurality of holes that penetrate this upper body are upwards fixed to a plurality of guide pins for 102a, 102b.
[51] further, as shown in figure 11, this lower body (203) comprising: a plurality of cylindrical rotary spacing devices (205), and its height is greater than the thickness of this rotor (202); Spring (204), one end are fixed to this lower body (203) and the other end comprises a ring; Close position (closeposition) groove (206) with pin, it is from the hollow of external peripheral surface to the rectangular shape of inner circumferential surface, and it is shorter than the length of spring to have the predetermined degree of depth and length.
[52] as shown in figure 11, the initial position of this rotor (202) is the position when the side that pin closes a groove (206) is touched rotary spacing device (205).For this substrate load is contacted on chuck to this, this rotor (202) is by going fixedly (not shown) of clamping shaft (dechucking shaft), and the upper body (201 of working as this contact chuck (101), do not show) and lower body (203) rotate counterclockwise predetermined angle, this guide pin (102) rotates counterclockwise, and therefore opens this guide pin.Further, for this substrate being fixed on this contact chuck, when this upper body (201, do not show) and lower body (203) that contacts chuck clockwise rotates certain angle, this guide pin (102a) clockwise rotates, and is locked when the top of this guide pin (102a) contacts this substrate.This substrate is limited by this guide pin (102) owing to the elastic force of spring (204).
[53] according to one embodiment of the invention, contact chuck (101) is an annular, has hollow in intermediate shaft part, and is characterised in that therefore it has arcuate section than tradition and has littler quality with the contact chuck of arranging spring in hollow.Because this specific character, consequently have than going out traditional littler inertia of contact chuck, reduce the acceleration and the deceleration time of rotating and stopping this substrate, reduce the turnaround time (TAT), therefore improve this substrate treatment speed, and reduce the specification of the rotation motor be used to rotate this contact chuck, so reduce the price of this substrate support device.
[54] Figure 12 to 15 is vertical views of this noncontact chuck shown in the key diagram 8.Provide fluid to handle the two-sided fluid supply opening (212) of this substrate and to be used for when handling the back side of this substrate, floating the porous plate of this substrate being configured with on the upper surface of this noncontact chuck (106).Further, as shown in figure 13, inert gas supply opening (213) is the lower surface that is configured in this noncontact chuck (106).
[55] as shown in figure 14, on this noncontact chuck (106) upper surface, (214a, 214b 214c) form porous plate to one or more plectanes.Therefore for example, (214a, 214b 214c) can be made by polytetrafluoroethylene (PTFE) plectane, and it has the extensive chemical resistance, and do not produce impurity with the chemicals reaction that is used for handling this wafer.
[56] the concentric porous plate (214a that hole with different size is set, 214b, 214c), described plate is made as middle on the direction at edge from this noncontact chuck (106), from having plate than aperture to the plate that has than macropore, perhaps from having plate than macropore, correspondingly rotate the centrifugal force that causes and construct by this substrate to the plate that has than aperture.
[57] as mentioned above, this substrate relies on inert gas to float on the top of this noncontact chuck (106), therefore prevent when (for example handling, the back side of polluting this substrate when cleaning) it go up to form substrate positive of pattern, this is to prevent that because of the inert gas that provides by these holes (215) impurity from flowing to the back side of this substrate.Further, when handling (for example etching or cleaning) and do not form the back side of substrate of pattern thereon, also can prevent the positive contaminated of this substrate.
[58] size of hole (215) and quantity can be adjusted according to the requirement of occasion, and it is desirable to, and the diameter in these holes is 1～1000 μ m.When the diameter in hole during at 1～1000 μ m, the unfavorable impurity that is present in the inert gas that floats this substrate will be captured, and produces filter effect, and it prevents to pollute substrate when treatment substrate.Further, cause different pressure owing to catch impurity in the hole, plectane (can estimate by the described pressure differential of working pressure instrumentation amount for 214a, 214b by transposing cycle 214c).
[59] further, ideally, this porous plate should cover this substrate at least 50% or large tracts of land more.When the area of this porous plate was in described scope, this inert gas that provides by a plurality of holes that form on this porous plate top flow to all the other zones of this substrate, i.e. edge.As a result, owing to provide inert gas equably at this substrate surface, thus as one man change in whole substrate surface temperature, and therefore can prevent the edge cooling effect (temperature of this substrate edge is lower than the temperature in the middle of this substrate).
[60] Figure 15 explanation is included in the middle fluid discharge outlet (104) of noncontact chuck (106).This fluid discharge outlet (104) is cylindrical and comprises a plurality of fluid supply tubes road therein.According to embodiments of the invention, be present in the middle duct arrangement of this fluid discharge outlet for dry gas (for example, is done N
2) be provided to this substrate by this gas supply opening (211), and in the centre around this pipe arrangement a plurality of duct arrangement around it for to provide various fluids (for example by fluid support mouth (212), be used for the chemicals of treatment substrate, be used for cleaning the deionized water (DIW) of this substrate etc.).Further, this fluid discharge outlet (104) is included in the insulated part between these a plurality of pipelines, thereby should a plurality of pipe-line wrappings.This insulated part can be by using insulating material or forming by forming vacuum.
[61] back side of this substrate can be by using fluid, comprising that by the centre at this noncontact chuck (106) fluid discharge outlet (104) handles.Further, because a plurality of pipelines that are formed in this fluid discharge outlet (104) are insulated by this insulated part (223), thereby prevented the temperature interference between the fluid, and the fluid that will provide by each pipeline is provided to this substrate with the temperature of original setting, and therefore can prevent because the processing mistake that temperature interference caused between the fluid.
[62] Figure 16 and 17 explanations are according to the Lift Part and the rotatable parts of one embodiment of the invention.
[63] Figure 16 is a stereogram, and it is the stereogram of this rotatable parts part of explanation that its specific descriptions are included in according to the structure of Lift Part in the device of the supporting substrate of one embodiment of the invention and rotatable parts and Figure 17.
The structure of this Lift Part [64] at first, is described.In one embodiment, lift motor can be arranged in the back side of this substrate support device.This lift motor is connected to elevation base plate (109) by synchronous belt, and the surperficial thereon fixedly pedestal of this elevation base plate (109) axle (111) is set in the centre of this elevation base plate, and this axle is led by two linings (108).
[65] hold therein the axle (111) pedestal and elevation cylinder (113) be fixed on this elevation base plate.Therefore, along with elevation base part moves up and down, this pedestal and this elevation cylinder (113) also move.This pedestal comprises two linings (108), it guides the rising or the decline of this axle (111), and the bearing (321,322) that is formed on these linings (108) outer surface frictional force between this lining (108) and the rotating shaft (325) when being reduced in rotating shaft (325) and rotating.This axle (111) is located in the hollow of this rotating shaft (325); Yet, because physics does not contact this rotating shaft (325), so even when this rotating shaft (325) is rotated, this axle (111) does not rotate yet.
[66] this elevation cylinder (113) comprises elevation cylinder fixture (328), and this axle (111) is fixed on the elevation cylinder (113) by this elevation cylinder fixture, and therefore this axle (111) along with this elevation cylinder (113) moves up and down and moves up and down.Further, because this axle (111) supports this noncontact chuck (106) at its topmost, this noncontact chuck (106) is along with this axle (111) moves up and down and moves up and down.
[67] next, the structure of these rotatable parts is described.As shown in figure 16, this rotating shaft (325) is contained in this rotating shaft frame (324).Further, form hollow, in this, comprise axle (111) in the air around this central shaft.This rotating shaft frame (324) reduces friction with this rotating shaft (325) by being included in wherein bearing (323,326).This rotating shaft frame (324) is fixed on this elevation base plate (109), and moving runner (107) is supported in the rotating shaft (325) that is contained in this rotating shaft frame (324), and this moving runner (107) supports this contact chuck (101) by using contact chuck support post (105).Therefore, this rotating shaft frame (324) is along with this elevation base plate (109) moves up and down and moves up and down.
[68] the uppermost partial fixing of this rotating shaft (325) is at the lower surface of this moving runner (107), and a plurality of contact chuck support posts (105) that are fixed on this moving runner (107) upper surface are connected to this contact chuck (101).As shown in figure 17, this rotating shaft (325) is rotated by means of the rotatory force of accepting this rotation motor (112) by synchronous belt (135).The moving runner (107) that is fixed on this rotating shaft (325) top rotates with the rotation of this rotating shaft (325), and therefore, this contact chuck (101) also rotates.
[69] below, referring to figs. 18 to 21, be described in according to handle in the device of the supporting substrate of one embodiment of the invention its go up the substrate that forms pattern positive with its on do not form the method for the substrate back of pattern.
[70] Figure 18 and Figure 19 illustrate the rising and the reduction of this lift motor of response and this elevation cylinder, and this contact chuck and this noncontact chuck raise and reduce.Particularly, Figure 18 explanation is when front of handling this substrate or front and back, and this contacts the rising and the reduction of chuck and this noncontact chuck.As shown in figure 18, the elevation base plate (109) that is connected to this lift motor (not shown) is by this lift motor rising C, this contact chuck (101) that is supported by this elevation base plate (109) and this noncontact chuck (106) C that also moves up.In this case, the difference in height between this elevation cylinder (113) and this elevation cylinder fixture (328) is A.
[71] in this case, the topmost of this noncontact chuck (106) is made as the topmost of the support pin (103a) that is lower than this contact chuck (101), and therefore this substrate is supported by this support pin.
[72] meanwhile, Figure 19 explanation should contact the rising and the reduction of chuck and this noncontact chuck when handling the back side of this substrate.As shown in figure 18, this elevation base plate (109) is by this lift motor rising C, and therefore, this contact chuck (101) and this noncontact chuck (106) C that also raises.Yet, in this case, because the cylinder that is included in this elevation cylinder (113) raises, this elevation cylinder fixture (328) A-B that additionally raises.Therefore, the difference in height between this elevation cylinder (113) and this elevation cylinder fixture (328) is B.Raise because this elevation cylinder fixture (328) is extra, be fixed on the axle (111) of this elevation cylinder fixture (328) and by the noncontact chuck (106) of this axle (111) topmost support A-B that also additionally raises.Therefore, the topmost of this noncontact chuck (106) is made as the topmost of the support pin (103a) that is higher than this contact chuck (101), and therefore, this substrate is floated by this noncontact chuck (106).
[73] below, with reference to Figure 20 and Figure 21, describe respectively Figure 18 with illustrated in fig. 19 because this contact that chuck and this noncontact chuck move the difference in the method for supporting substrate.
[74] Figure 20 explanation is used for the method for supporting substrate when the front and back of the front of handling this substrate or this substrate.(102a 102b) fixes, and prevents from thus to move in the horizontal direction when this substrate rotates by this guide pin in the side of this substrate.As mentioned above, the topmost of this noncontact chuck (106) is made as and is lower than this support pin of being configured in this contact chuck (101) top (therefore, (103a 103b) supports this substrate (A) by this support pin for 103a, topmost 103b).So, use the substrate processing device (not shown) be located on the substrate support device of the present invention top, can carry out technology to the front of the substrate of formation pattern it on as etching or cleaning.Further, simultaneously, relying on by being positioned at the middle fluid discharge outlet (104) of this noncontact chuck (106) provides fluid (for example, chemicals, deionized water (DIW)), the back side that can handle this substrate (A) that does not form pattern on it.Therefore, the front and back of handling the positive of this substrate or handling this substrate is possible.
[75] Figure 21 explanation is used for the method for supporting substrate when handling the back side of this substrate.The topmost of this noncontact chuck (106) is made as and is higher than this support pin (therefore, this substrate (A) is floated by the inert gas that the hole of the porous plate by this noncontact chuck (106) provides for 103a, topmost 103b).In this case, also (102a 102b) prevents that this substrate (A) from moving in the horizontal direction by this guide pin s.This substrate (A) is floated by this noncontact chuck (106), and because the substrate processing device (not shown) is located at substrate support device of the present invention top, does not carry out technologies such as etching so can form the back side of this substrate of pattern thereon.
[76] as can be seen from the above, substrate support device according to one embodiment of the invention has higher device usability than traditional substrate support device (owing to it can not handle contact chuck and the noncontact chuck that this substrate needs assembling separately selectively), this is because device of the present invention can be handled surface that forms pattern and the surface that does not form pattern selectively by using this contact chuck (101) with this different relative position of noncontact chuck (106).Further, also because it can realize that all handle the pattern in the front of this substrate, handle the pattern of front and back of this substrate and the pattern of handling the back side of this substrate, so it has higher device usability.
[77] explanation about the disclosed embodiments above offers those skilled in the art, thus anyone used the present invention of this area.The various variations of described embodiment are conspicuous for the technical staff, and the General Principle that limits here can be applied to other embodiment in notion of the present invention and the scope.So the present invention is not limited to these embodiment disclosed herein, and scope of the present invention is principle disclosed herein and the novel pairing scope of characteristic.
[78] this noncontact chuck that present invention resides in the single assembly contacts chuck and passes through this their relative position of Lift Part adjusting of use with this, and having solved traditional substrate support device needs two or more devices to carry out the problem of three patterns (handling the substrate front of formation pattern, substrate back and the treatment substrate front and back that processing does not form pattern).
[79] further, use the quality that has reduced chuck according to the contact chuck of one embodiment of the invention, therefore increase the finished product rate and reduce the price of device.
[80] further, use noncontact chuck according to one embodiment of the invention, when handling described substrate positive, can prevent the pollution of this substrate back of formation pattern it on.Further, when on handling it, not forming the substrate back of pattern, can form consistent temperature at whole substrate surface, and this substrate can only utilize low-pressure inert gas to float, and when on handling it, not forming the substrate back of pattern, can prevent to have substrate positive impaired of high aspect-ratio pattern.
Claims (22)
1. the device of a supporting substrate, it comprises:
The noncontact guide, it provides gas so that this substrate is floated predetermined distance to this substrate;
Lift Part, it supports this noncontact guide, and this Lift Part is in the vertical direction rising or reduce this noncontact guide;
This substrate is fixed on the contact guidance spare on top, this contact guidance spare for annular so that the noncontact guide is concentric is provided with around this noncontact guide and with this; With
Rotatable parts support and rotate this contact guidance spare,
Wherein be made as when being lower than this contact guidance spare when this noncontact guide, this contact guidance spare supports this substrate, and is made as when being higher than this contact guidance spare when this noncontact guide, and this substrate floats on this noncontact guide.
2. the device of supporting substrate according to claim 1, wherein this contact guidance spare comprises:
A plurality of support pin, it is arranged as annular on the upper surface of this contact guidance spare, these a plurality of support pin are made as when this contact guidance spare supports this substrate and are higher than this noncontact guide top, and when this substrate floats over this noncontact guide top, be made as and be lower than this noncontact guide, and
A plurality of guide pins are being arranged on the upper surface of this contact guidance spare outside these a plurality of support pin, and the contacts side surfaces of these a plurality of guide pins and this substrate is to fix this substrate.
3. the device of supporting substrate according to claim 2, wherein this support pin and this guide pin separate.
4. the device of supporting substrate according to claim 2, wherein this support pin and this guide pin are one.
5. the device of supporting substrate according to claim 1, wherein this contact guidance spare comprises the annular brace post that forms hollow therebetween and a plurality of anchor clamps hinged with this support column, each anchor clamps that has connection on this top utilize the protuberance of tight adhesion on this top of this substrate edge, simultaneously, utilization is taken this substrate of clamping by centrifugal force to the bottom of these anchor clamps of the opposite direction inclination in this contact guidance spare center when this contact guidance spare rotates.
6. the device of supporting substrate according to claim 1, wherein this contact guidance spare comprises:
The annular brace post forms hollow therebetween;
A plurality of anchor clamps are hinged on this support column and in this bottom and have first magnet;
A plurality of second magnets have identical polar with this first magnet, and these a plurality of second magnets are positioned at position corresponding with the bottom of these anchor clamps on this support column; With
Cylinder, in conjunction with these a plurality of second magnets with up and down the motion,
Each anchor clamps that wherein has connection on this top utilize the protuberance of tight adhesion on this top of this substrate edge, simultaneously, utilize when be located at this second magnet when moving upward by repulsion to the bottom of these anchor clamps of the reversed dip at this contact guidance spare center and this substrate of clamping.
7. the device of supporting substrate according to claim 1, wherein the porous plate of this noncontact guide comprises one or more plectanes, when comprising two or more plectane, each of these two or more plectanes can have different diameters and be provided with one heart.
8. the device of supporting substrate according to claim 7, wherein these one or more plectanes have the hole of a plurality of same sizes.
9. the device of supporting substrate according to claim 7, wherein said two or more plectanes have the hole of a plurality of different sizes respectively.
10. according to Claim 8 or the device of 9 described supporting substrates, wherein these a plurality of bore dias are 1-1000 μ m.
11. the device of supporting substrate according to claim 10, the fluid supply opening in the middle of wherein this noncontact guide further is included in and this one or more plectanes are around at least a portion of this fluid supply opening.
12. the device of supporting substrate according to claim 11, wherein this fluid supply opening is cylindrical and comprising a plurality of pipelines, and wherein these a plurality of pipelines are insulated by insulating material.
13. the device of supporting substrate according to claim 1, wherein this substrate support device comprises first quill shaft and second quill shaft of arranged concentric,
Wherein this first quill shaft is included in this second quill shaft, and the diameter of this first quill shaft is less than the diameter of this second quill shaft,
Wherein this first quill shaft is risen in vertical direction by Lift Part or descends to raise or to reduce this noncontact guide, and the bottom of this first quill shaft is connected to this noncontact guide of upper support of Lift Part and this first quill shaft, and
Wherein this second quill shaft is rotated to rotate this contact guidance spare in the horizontal direction by rotatable parts, and the bottom of this second quill shaft is connected to this contact guidance spare of upper support of these rotatable parts and this second quill shaft.
14. according to the device of each described supporting substrate of claim 1-9, wherein this noncontact guide is circular.
15. according to the device of each described supporting substrate of claim 1-9, wherein this noncontact guide is a polygon.
16. the device of a supporting substrate, it comprises:
The noncontact guide, it provides gas so that this substrate is floated predetermined distance by nozzle ring to this substrate, and wherein one or more different nozzle ring concentric structures are on the upper surface of this noncontact guide;
Lift Part, it supports this noncontact guide, and this Lift Part is in the vertical direction rising or reduce this noncontact guide;
This substrate is fixed on the contact guidance spare on top, this contact guidance spare for annular so that the noncontact guide is concentric is provided with around this noncontact guide and with this; With
Rotatable parts, its support and rotate this contact guidance spare,
Wherein be made as when being lower than this contact guidance spare when this noncontact guide, this contact guidance spare supports this substrate, and is made as when being higher than this contact guidance spare when this noncontact guide, and this substrate floats on this noncontact guide.
17. noncontact chuck, it provides gas so that this substrate is floated predetermined distance to this substrate, this noncontact chuck comprises one or more plectanes, and when comprising two or more plectane, each of these two or more plectanes has different-diameter and is provided with one heart.
18. noncontact chuck according to claim 17, wherein these one or more plectanes have the hole of a plurality of same sizes.
19. noncontact chuck according to claim 17, wherein said two or more plectanes have the hole of a plurality of different sizes respectively.
20. according to each described noncontact chuck of claim 17-19, wherein the diameter in these a plurality of holes is 1-1000 μ m.
21. noncontact chuck according to claim 20, the fluid supply opening in the middle of wherein this noncontact chuck further is included in and this one or more plectanes are around at least a portion of this fluid supply opening.
22. noncontact chuck according to claim 21, wherein this fluid supply opening is cylindrical and is included in the interior a plurality of fluid supply tubes road of this fluid supply opening, and wherein these a plurality of pipelines are insulated by insulating material.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0074919 | 2006-08-08 | ||
| KR1020060074919 | 2006-08-08 | ||
| KR1020060074919A KR100862912B1 (en) | 2006-08-08 | 2006-08-08 | Device for processing substrate |
| PCT/KR2007/003776 WO2008018731A1 (en) | 2006-08-08 | 2007-08-06 | Device for supporting substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101501833A true CN101501833A (en) | 2009-08-05 |
| CN101501833B CN101501833B (en) | 2012-07-04 |
Family
ID=39033220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800294501A Expired - Fee Related CN101501833B (en) | 2006-08-08 | 2007-08-06 | Device for supporting substrate |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100862912B1 (en) |
| CN (1) | CN101501833B (en) |
| TW (1) | TWI384581B (en) |
| WO (1) | WO2008018731A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681431A (en) * | 2012-09-18 | 2014-03-26 | 三星显示有限公司 | Substrate fixing device utilizing air pressure |
| CN105345937A (en) * | 2015-11-23 | 2016-02-24 | 河南理工大学 | Experiment device for manufacturing Brazilian disc Y-shaped crack and operation method of experiment device |
| CN105990181A (en) * | 2015-01-28 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ejector pin mechanism and degassing cavity |
| CN106548971A (en) * | 2016-10-11 | 2017-03-29 | 武汉新芯集成电路制造有限公司 | A kind of chuck of wet method single chip washer platform |
| CN110034062A (en) * | 2019-04-19 | 2019-07-19 | 德淮半导体有限公司 | Wafer clamping device and chuck |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8246798B2 (en) * | 2009-03-02 | 2012-08-21 | Canon Anelva Corporation | Substrate processing apparatus and apparatus and method of manufacturing magnetic device |
| US8939451B2 (en) * | 2013-03-11 | 2015-01-27 | Varian Semiconductor Equipment Associates, Inc. | Floating high vacuum seal cartridge |
| TWI566327B (en) * | 2015-12-01 | 2017-01-11 | 錫宬國際有限公司 | Wafer supporting device |
| KR101917432B1 (en) * | 2016-11-21 | 2018-11-09 | 세메스 주식회사 | Substrate supporting member and probe station having the same |
| CN108346607B (en) * | 2017-01-25 | 2020-11-03 | 上海新昇半导体科技有限公司 | Vertical plug-in type blocking foot and Bernoulli sucker |
| FR3110948B1 (en) * | 2020-05-29 | 2022-08-12 | Commissariat Energie Atomique | PLATE POSITIONING SYSTEM. |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2855046B2 (en) * | 1993-03-31 | 1999-02-10 | 大日本スクリーン製造株式会社 | Substrate rotation holding device for rotary substrate processing equipment |
| US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
| KR100340154B1 (en) * | 1999-12-06 | 2002-06-10 | 김광교 | Wafer chuck for spinning a wafer |
| JP4177068B2 (en) * | 2002-10-08 | 2008-11-05 | 葵精機株式会社 | Substrate processing apparatus and manufacturing method thereof |
| JP4312001B2 (en) * | 2003-07-28 | 2009-08-12 | リアライズ・アドバンストテクノロジ株式会社 | Substrate support device and substrate removal method |
| KR101195628B1 (en) * | 2004-04-14 | 2012-10-30 | 코레플로우 사이언티픽 솔루션스 리미티드 | A method for focusing an optical device on a facing surface of a flat object |
| JP4467379B2 (en) * | 2004-08-05 | 2010-05-26 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| KR100674922B1 (en) | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | Wafer supporting apparatus having cooling path for cooling focus ring |
-
2006
- 2006-08-08 KR KR1020060074919A patent/KR100862912B1/en active IP Right Grant
-
2007
- 2007-08-03 TW TW96128550A patent/TWI384581B/en active
- 2007-08-06 WO PCT/KR2007/003776 patent/WO2008018731A1/en active Application Filing
- 2007-08-06 CN CN2007800294501A patent/CN101501833B/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681431A (en) * | 2012-09-18 | 2014-03-26 | 三星显示有限公司 | Substrate fixing device utilizing air pressure |
| CN103681431B (en) * | 2012-09-18 | 2018-02-16 | 三星显示有限公司 | Use the apparatus for fixing substrate of air pressure |
| CN105990181A (en) * | 2015-01-28 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ejector pin mechanism and degassing cavity |
| CN113161280A (en) * | 2015-01-28 | 2021-07-23 | 北京北方华创微电子装备有限公司 | Ejector pin mechanism and degassing cavity |
| CN113161280B (en) * | 2015-01-28 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Thimble mechanism and degassing chamber |
| CN105345937A (en) * | 2015-11-23 | 2016-02-24 | 河南理工大学 | Experiment device for manufacturing Brazilian disc Y-shaped crack and operation method of experiment device |
| CN105345937B (en) * | 2015-11-23 | 2017-06-30 | 河南理工大学 | Prepare the experimental provision and its operating method in Brazilian disc herringbone crack |
| CN106548971A (en) * | 2016-10-11 | 2017-03-29 | 武汉新芯集成电路制造有限公司 | A kind of chuck of wet method single chip washer platform |
| CN110034062A (en) * | 2019-04-19 | 2019-07-19 | 德淮半导体有限公司 | Wafer clamping device and chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI384581B (en) | 2013-02-01 |
| CN101501833B (en) | 2012-07-04 |
| WO2008018731A1 (en) | 2008-02-14 |
| KR20080013426A (en) | 2008-02-13 |
| KR100862912B1 (en) | 2008-10-13 |
| TW200816361A (en) | 2008-04-01 |
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