CN101488427A - Fuse having cutting regions and fuse set structure having the same - Google Patents
Fuse having cutting regions and fuse set structure having the same Download PDFInfo
- Publication number
- CN101488427A CN101488427A CNA2009100007048A CN200910000704A CN101488427A CN 101488427 A CN101488427 A CN 101488427A CN A2009100007048 A CNA2009100007048 A CN A2009100007048A CN 200910000704 A CN200910000704 A CN 200910000704A CN 101488427 A CN101488427 A CN 101488427A
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- China
- Prior art keywords
- fuse
- zone
- cutting regions
- parallel
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Discloses is a fuse having cutting regions and fuse set structure having the same, wherein the area of the fuse is reduced proportionally with the integration of the semiconductor device. The fuse includes a main fuse region and a plurality of cutting regions extending from the main fuse region.
Description
The cross reference of related application
The application requires to be committed to korean patent application 10-2008-0004850 number of Korean Patent office and to be committed to the priority of korean patent application 10-2008-0122847 number of Korean Patent office on December 5th, 2008 on January 16th, 2008, and its full content is incorporated herein by reference.
Technical field
The fuse assembly structure that embodiment described herein relates to a kind of fuse (fuse) and has this fuse, and more specifically, relate to a kind of fuse assembly structure that has the fuse of a plurality of cutting regions and have this fuse.
Background technology
Along with the size of devices that constitutes semiconductor integrated circuit diminishes, the quantity that is integrated in the device in the single semiconductor chip increases, so defect concentration also increases.The increase of this defect concentration has reduced finished semiconductor device product rate.And under extreme case, need abandon the wafer that is used for producing the semiconductor devices.
For reducing defect concentration, proposed a kind of redundant circuit (redundancy circuit) and changed defective unit to utilize extra unit.Under the situation of semiconductor memory, can redundant circuit (or fuse circuit) be installed corresponding to row interconnection (for example word line) and row interconnection (for example bit line), and this redundant circuit can comprise that the fuse assembly group is to store the address information of defective unit.This fuse assembly group comprises a plurality of fuse assembly arrays, and this array has a plurality of fuses, and the program of each fuse assembly can be cut to cut and carried out by selective laser.
As shown in Figure 1, traditional fuse assembly 40 comprises that D is configured to a plurality of fuses parallel to each other 41 to 48 at regular intervals.Fuse 41 to 48 is configured to linear pattern, and has identical live width W and spacing p.Reference numeral 50 expressions are treated to cut the zone of cutting by laser beam.
Yet,, be integrated in the quantity increase of the semiconductor memory cell in the memory bank and the size of memory bank and dwindle along with the integration density of semiconductor memory increases.But, must guarantee the spacing p between the fuse 41 to 48 again, cut a spacing, when reduction comprises the area of circuit blocks of fuse assembly 40, cause difficulty thus to obtain cutting of fuse assembly 40.
In more detail, because the spacing p between the fuse 41 to 48 is that the ability by this laser beam equipment is that the laser alignment tolerance decides, therefore if can't guarantee that spacing p between the fuse 41 to 48 is corresponding to the laser alignment tolerance, then, may damage contiguous fuse 41 to 48 cutting section fuse by laser at 41 to 48 o'clock.Thereby, on normal memory cell, carry out redundant operation, even make that detecting defective unit can not replace this defective unit yet.
Thereby, can't be by dwindling the area of fuse assembly simply with the proportional mode of the integration density of semiconductor integrated circuit.Thus, the footprint area of fuse assembly little by little increases, thereby the miniaturization of semiconductor integrated circuit is caused restriction.
Summary of the invention
Herein disclosed is a kind of fuse and a kind of fuse assembly structure with this fuse, wherein the integration density of the area of fuse and semiconductor device reduces pro rata.
According to one side, fuse comprises: main fuse zone, and a plurality of cutting regions that extend from the main fuse zone.
According on the other hand, fuse assembly comprises a plurality of fuses, this fuse comprises main fuse zone and a plurality of cutting regions that extend from the main fuse zone, and wherein contiguous fuse is reversed relative to each other and rotates about 180 degree and keep predetermined space between contiguous fuse.
In the embodiment later these and other feature, aspect and embodiment will be described.
Description of drawings
By detailed description below in conjunction with accompanying drawing, can more be expressly understood the above-mentioned of theme of the present invention and other aspect, feature and other advantage, wherein:
Fig. 1 is the plan view that the fuse assembly of conventional semiconductors integrated circuit is shown;
Fig. 2 is the plan view that illustrates according to the example of structure of the fuse of first embodiment of the invention;
Fig. 3 is a plan view, and the example of structure that wherein is provided with according to the fuse assembly of the fuse of first embodiment of the invention is shown;
Fig. 4 is the plan view that illustrates according to the example of structure of the fuse of second embodiment of the invention;
Fig. 5 is a plan view, and the example of structure that wherein is provided with according to the fuse assembly of the fuse of second embodiment of the invention is shown;
Fig. 6 is the plan view that illustrates according to the example of structure of the fuse of third embodiment of the invention;
Fig. 7 is a plan view, and the example of structure that wherein is provided with according to the fuse assembly of the fuse of third embodiment of the invention is shown;
Fig. 8 is the plan view that illustrates according to the example of structure of the fuse of fourth embodiment of the invention;
Fig. 9 is a plan view, and the example of structure that wherein is provided with according to the fuse assembly of the fuse of fourth embodiment of the invention is shown;
Figure 10 is the plan view that illustrates according to the example of structure of the fuse of fifth embodiment of the invention;
Figure 11 is a plan view, and the example of structure that wherein is provided with according to the fuse assembly of the fuse of fifth embodiment of the invention is shown; And
Figure 12 and 13 is plan views, wherein according to the single fuse of being provided with of other embodiments of the invention and have the fuse of a plurality of cutting regions.
Embodiment
As shown in Figure 2, fuse 110 can comprise main fuse zone 111 and two cutting regions (being called first cutting regions 113 and second cutting regions 115 hereinafter).
First and second cutting regions 113 and 115 α ° of end from main fuse zone 111 at a predetermined angle forms branch, extends parallel to each other then.That is, first and second cutting regions 113 and 115 has bending section X, and is divided into stub area 113a and 115a and parallel zone 113b and 115b at bending section X place.
First and second cutting regions 113 and 115 is about main fuse zone 111 side direction symmetry each other.In addition, fuse 110 can comprise in order to form the conductor layer of pattern, for example polysilicon layer in semiconductor integrated circuit.Main fuse zone 111 and first and second cutting regions 113 and 115 form continuously, and have identical live width.
As shown in Figure 3, a plurality of fuses 110 with a plurality of cutting regions 113 and 115 are integrated to form single fuse assembly 150.For example, select signal, therefore must provide 8 fuses according to correlation technique because the fuse assembly 150 of present DRAM device can receive 8 blocks.Yet according to present embodiment, fuse 110 has two cutting regions 113 and 115, so fuse assembly 150 can be made of four fuses 110.
As mentioned above, comprise a plurality of fuses 110, and selected fuse 110 is reversed the angles of rotating 180 degree with respect to the fuse 110 of contiguous this selected fuse 110 according to the fuse assembly 150 of present embodiment.This fuse assembly 150 is to be made of four fuses 110.For example, the cutting regions 113 and 115 that is arranged on the fuse 110 of odd positions faces the top, and being arranged on the cutting regions 113 and 115 faced downwards of the fuse 110 of even number position, the cutting regions 113 and 115 that wherein is set at the fuse 110 of even number position is set between the main fuse 111 of the fuse 110 of odd positions.
The contiguous fuse 110 that forms fuse assembly 150 is apart with laser alignment tolerance D or more distance on the whole zone of fuse 110.Reference number C shown in the figure is represented that laser beam is cut its fuse that shines and is cut the district.
In above-mentioned fuse assembly 150, fuse 110 comprises two cutting regions 113 and 115, and is close to the angles that fuse 110 relative to each other is reversed rotation 180 degree, so the entire length of fuse assembly 150 is 5D.This length is represented the length of the major axis of fuse assembly 150.
Compared to the length 7D of traditional fuse assembly (referring to Fig. 1 40), can shorten about 40% according to the length of the fuse assembly 150 of present embodiment.
Fig. 4 is the plan view that illustrates according to the example of structure of the fuse of second embodiment of the invention.
As shown in Figure 4, be similar to previous embodiment, comprise 211 and two cutting regions 213 in main fuse zone and 215 according to the fuse 210 of present embodiment.In addition, be similar to previous embodiment, cutting regions 213 and 215 has bending section X, and is divided into stub area 213a and 215a and parallel zone 213b and 215b at the local X of bending place.
As shown in Figure 5, a plurality of fuses 210 are integrated to constitute single fuse assembly 250.
According to present embodiment, on the whole zone of fuse 210, contiguous fuse 210 is apart with laser alignment tolerance D or more distance.Reference number C shown in the figure is represented that laser beam is cut its fuse that shines and is cut the district.
250 li of above-mentioned fuse assemblies, fuse 210 comprises two cutting regions 213 and 215, and contiguous fuse 210 is reversed setting with the angles that become 180 degree relative to each other, so the entire length of fuse assembly 250 is reduced to 5D.
Fig. 6 is the plan view that illustrates according to the example of structure of the fuse of third embodiment of the invention.
As shown in Figure 7, a plurality of fuses 310 are integrated to constitute single fuse assembly 350.
Be similar to previous embodiment, according to 350 li of the fuse assemblies of present embodiment, selected fuse 310 is to be reversed setting with 310 one-tenths 180 angles of spending of fuse of contiguous this selected fuse 310.In addition, in single fuse assembly 350, provide four fuses 310, make and to form 8 cutting regions 313 and 315 for 350 li at fuse assembly.
According to the fuse assembly 350 with said structure, compared to traditional fuse assembly 40, the entire length of fuse assembly 350 can shorten into 5D.
Fig. 8 is the plan view that illustrates according to the example of structure of the fuse of fourth embodiment of the invention.
As shown in Figure 8, fuse 410 comprises main fuse zone 411 and a plurality of cutting regions, for example four cutting regions 413,414,415 and 416.Cutting regions 413,414,415 and 416 extends parallel to each other, and apart with laser alignment tolerance D.In the cutting regions 413,414,415 and 416 one, for example, extend with form of straight lines in first cutting regions, 413 autonomous fuse zones 411, and four cutting regions 413,414,415 and 416 are connected to each other via join domain 417.Join domain 417 extends perpendicular to four cutting regions 413,414,415 and 416.
As shown in Figure 9, two fuses 410 that comprise four cutting regions 413,414,415 and 416 are integrated to constitute single fuse assembly 450.
According to present embodiment, a pair of fuse assembly 450 that comprises four cutting regions 413,414,415 and 416 is configured to be mutually symmetrical and becomes the angles of 180 degree between them.Contiguous fuse 410 on the whole zone of fuse 410 with laser alignment tolerance D or more apart from each interval.Particularly, must guarantee to be spaced apart laser alignment tolerance D between the contiguous join domain 417.
Total length with fuse assembly 450 of aforementioned structure is 4D, thereby compared to traditional fuse assembly 40, the length of fuse assembly 450 can reduce about 70%.
In addition, as shown in figure 10, can between two cutting regions 113 and 115 as shown in Figure 2, the 3rd cutting regions 118 be set.Extend continuously with form of straight lines the end in the 3rd cutting regions 118 autonomous fuse zones 111.First cutting regions 113 and the 3rd cutting regions 118 be laser alignment tolerance D at interval, and second cutting regions 115 and the 3rd cutting regions 118 interval laser alignment tolerance D.
With reference to Figure 11, the fuse 110A that comprises three cutting regions 113,115 and 118 constitutes single fuse assembly 150A together with two single fuses 120.The fuse that has single cutting regions according to single fuse 120 expressions of present embodiment.As mentioned above, because single fuse assembly 150 must have 8 fuse cutting regions, therefore when fuse assembly 150A be when forming by fuse 110A with three cutting regions 113,115 and 118 according to present embodiment, should increase by two single fuses 120.
That is, the fuse assembly 150A according to present embodiment comprises that wherein fuse 110A comprises: three cutting regions 113,115 and 118 relative to each other with the reverse a pair of fuse 110A that is provided with of the angle of 180 degree; And single fuse 120, this list fuse 120 on the whole zone of fuse 110A with the outside of the fuse 110A laser alignment tolerance D of being separated by.Since single fuse 120 on the whole zone of fuse 110A be separated by laser alignment tolerance D and being provided with in parallel with each other of fuse 110A, therefore single fuse 120 must have at least two bending zones, is similar to fuse 110A.
Length with fuse assembly 150A of aforementioned structure is 5D.
The present invention is not limited to this embodiment.
Although the invention describes: when the divisor of the quantity of the cutting regions of fuse required cutting regions in corresponding to fuse assembly, the fuse that only possesses a plurality of cutting regions sequentially is provided with.According to another embodiment, a plurality of cutting regions and single fuse sequentially can be provided with to form fuse assembly.
That is, shown in Figure 12 and 13, each among fuse assembly 150B and the 150C comprises a pair of fuse 110 with two cutting regions 113 and 115, and is set at the single fuse 120 between the fuse 110.Fuse 110 is reversed setting with the angle that becomes 180 degree relative to each other, and two single fuses 120 or four single fuses 120 can be set respectively between fuse 110, shown in Figure 12 and 13.At fuse 110 and be adjacent to spacing between single fuse 120 of this fuse 110 corresponding to laser alignment tolerance D with two cutting regions 113 and 115.Single fuse 120 is parallel with the profile of fuse 110.Fuse assembly 150B and 150C have the length of 6D, are reduced compared to traditional fuse assembly 40 these length.
In addition, although comprise 8 fuse cutting regions, the invention is not restricted to this and can differently revise according to single fuse assembly of embodiment.
Promptly describe in detail as preamble, according to the present invention, fuse has at least two cutting regions, and fuse is provided with being mutually symmetrical.Thereby compared to traditional fuse assembly, the area of fuse assembly can significantly reduce, and wherein single cutting regions is set on single fuse.Therefore, the area of fuse assembly can reduce pro rata with the integrated level of semiconductor integrated circuit.
Though above described specific embodiment, it should be understood that described embodiment is an example.Thereby, should not limit system and method as described herein based on described embodiment.On the contrary, should limit system and method as described herein according to follow-up claim and in conjunction with foregoing description and accompanying drawing.
Claims (21)
1. fuse comprises:
The main fuse zone; And
The a plurality of cutting regions that extend from described main fuse zone.
2. fuse as claimed in claim 1, wherein said cutting regions is apart with the laser alignment tolerance.
3. fuse as claimed in claim 1, each in wherein said a plurality of cutting regions comprises: first stub area and second stub area that form branch at a predetermined angle from described main fuse zone; And
First parallel zone and second parallel zone that extends from described first stub area and second stub area respectively in parallel with each other.
4. fuse as claimed in claim 3, wherein said first parallel zone and the described second parallel zone described laser alignment tolerance of being separated by.
5. fuse as claimed in claim 3, wherein said first stub area and second stub area form branch from described main fuse zone, and form the angle of 180 degree between described first stub area and second stub area.
6. fuse as claimed in claim 3 further is included in the 3rd parallel zone that extends from described main fuse zone with form of straight lines between described first parallel zone and second parallel zone,
Wherein said first parallel zone and described the 3rd parallel zone described laser alignment tolerance of being separated by, and wherein said second parallel zone and described the 3rd parallel zone described laser alignment tolerance of being separated by.
7. fuse as claimed in claim 1, wherein said cutting regions extends parallel to each other, and in the wherein said cutting regions one extends from described main fuse zone with form of straight lines.
8. fuse as claimed in claim 7 comprises further connecting the join domain of described main fuse zone to described cutting regions that wherein said join domain is vertical with the bearing of trend in described cutting regions and described main fuse zone.
9. fuse as claimed in claim 7, wherein said cutting regions is apart with described laser alignment tolerance.
10. fuse assembly comprises:
A plurality of fuses, described fuse comprise main fuse zone and a plurality of cutting regions that extend from described main fuse zone, and wherein contiguous fuse is reversed relative to each other to rotate between about 180 degree and the described contiguous fuse and keeps predetermined space.
11. as the fuse assembly of claim 10, wherein said contiguous fuse is apart with the laser alignment tolerance on the whole zone of described fuse.
12. as the fuse assembly of claim 10, each in a plurality of cutting regions of wherein said fuse comprises:
Form first stub area and second stub area of branch at a predetermined angle from described main fuse zone; And
First parallel zone and second parallel zone that extends from described first stub area and second stub area respectively in parallel with each other.
13. as the fuse assembly of claim 12, wherein said first parallel zone and described second parallel zone laser alignment tolerance of being separated by.
14., have the angle of 180 degree between wherein said first stub area and described second stub area as the fuse assembly of claim 12.
15. as the fuse assembly of claim 12, further be included in the 3rd parallel zone that extends from described main fuse zone with form of straight lines between described first parallel zone and second parallel zone,
Wherein said first parallel zone and described the 3rd parallel zone described laser alignment tolerance of being separated by, and wherein said second parallel zone and described the 3rd parallel zone described laser alignment tolerance of being separated by.
16. as the fuse assembly of claim 10, wherein said a plurality of cutting regions extend parallel to each other, and in wherein said a plurality of cutting regions one extends from described main fuse zone with form of straight lines.
17. as the fuse assembly of claim 16, comprise further connecting the join domain of described main fuse zone that wherein said join domain extends perpendicular to described main fuse zone and described cutting regions to described cutting regions.
18. as the fuse assembly of claim 16, wherein said cutting regions is apart with the laser alignment tolerance.
19. as the fuse assembly of claim 10, wherein said fuse sequentially is provided with, and makes the quantity of described cutting regions select the quantity of signal corresponding to block.
20. as the fuse assembly of claim 19, wherein the fuse with single cutting regions further is set having between the described fuse of described cutting regions, makes the quantity of cutting regions of fuse select the quantity of signal corresponding to described block.
21. as the fuse assembly of claim 20, the fuse that wherein has described single cutting regions is separated by with the fuse with described cutting regions on the whole zone of described fuse.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20080004850 | 2008-01-16 | ||
| KR1020080004850 | 2008-01-16 | ||
| KR1020080122847 | 2008-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101488427A true CN101488427A (en) | 2009-07-22 |
Family
ID=40891251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100007048A Pending CN101488427A (en) | 2008-01-16 | 2009-01-07 | Fuse having cutting regions and fuse set structure having the same |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR100980416B1 (en) |
| CN (1) | CN101488427A (en) |
| TW (1) | TW200933865A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103733295A (en) * | 2011-08-09 | 2014-04-16 | 矢崎总业株式会社 | Multi-fusible link |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101102048B1 (en) * | 2009-09-16 | 2012-01-04 | 주식회사 하이닉스반도체 | The fuse of semicondutor device and method for fabricating the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747869A (en) * | 1995-12-22 | 1998-05-05 | Micron Technology, Inc. | Reduced pitch laser redundancy fuse bank structure |
| US6172896B1 (en) * | 1998-11-05 | 2001-01-09 | Samsung Electronics Co., Ltd. | Layout arrangements of fuse boxes for integrated circuit devices, including bent and straight fuses |
| TW552695B (en) * | 2001-03-15 | 2003-09-11 | Infineon Technologies Ag | Integrated circuit having electrical connecting elements |
| CN1494145A (en) * | 2002-09-27 | 2004-05-05 | 三星电子株式会社 | Fuse element and integrated circuit device using said element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100721544B1 (en) * | 2001-04-24 | 2007-05-23 | 주식회사 하이닉스반도체 | Column redundancy circuit |
| KR20070023978A (en) * | 2005-08-25 | 2007-03-02 | 삼성전자주식회사 | Semiconductor memory device with improved fuse arrangement |
| KR20070057336A (en) * | 2005-12-01 | 2007-06-07 | 삼성전자주식회사 | Memory device having common fuse block |
-
2008
- 2008-12-04 KR KR20080122599A patent/KR100980416B1/en not_active IP Right Cessation
- 2008-12-05 KR KR1020080122847A patent/KR20090079158A/en not_active Application Discontinuation
- 2008-12-16 TW TW97149037A patent/TW200933865A/en unknown
-
2009
- 2009-01-07 CN CNA2009100007048A patent/CN101488427A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747869A (en) * | 1995-12-22 | 1998-05-05 | Micron Technology, Inc. | Reduced pitch laser redundancy fuse bank structure |
| US6172896B1 (en) * | 1998-11-05 | 2001-01-09 | Samsung Electronics Co., Ltd. | Layout arrangements of fuse boxes for integrated circuit devices, including bent and straight fuses |
| TW552695B (en) * | 2001-03-15 | 2003-09-11 | Infineon Technologies Ag | Integrated circuit having electrical connecting elements |
| CN1494145A (en) * | 2002-09-27 | 2004-05-05 | 三星电子株式会社 | Fuse element and integrated circuit device using said element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103733295A (en) * | 2011-08-09 | 2014-04-16 | 矢崎总业株式会社 | Multi-fusible link |
| CN103733295B (en) * | 2011-08-09 | 2015-12-23 | 矢崎总业株式会社 | Multi-fusible link |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100980416B1 (en) | 2010-09-07 |
| TW200933865A (en) | 2009-08-01 |
| KR20090079158A (en) | 2009-07-21 |
| KR20090079157A (en) | 2009-07-21 |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090722 |