CN101483218A - 一种温差电池及其制作方法 - Google Patents
一种温差电池及其制作方法 Download PDFInfo
- Publication number
- CN101483218A CN101483218A CNA2009101051739A CN200910105173A CN101483218A CN 101483218 A CN101483218 A CN 101483218A CN A2009101051739 A CNA2009101051739 A CN A2009101051739A CN 200910105173 A CN200910105173 A CN 200910105173A CN 101483218 A CN101483218 A CN 101483218A
- Authority
- CN
- China
- Prior art keywords
- type thermoelectric
- thin layer
- thermoelectric material
- material thin
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000000605 extraction Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000003466 welding Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 14
- 239000000178 monomer Substances 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Secondary Cells (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101051739A CN101483218B (zh) | 2009-01-20 | 2009-01-20 | 一种温差电池的制作方法 |
PCT/CN2009/075422 WO2010083706A1 (zh) | 2009-01-20 | 2009-12-09 | 一种温差电池及其制造方法 |
JP2011545614A JP5554786B2 (ja) | 2009-01-20 | 2009-12-09 | 熱電発電機の製造方法 |
US13/145,207 US8748208B2 (en) | 2009-01-20 | 2009-12-09 | Method for fabricating thermo-electric generator |
EP09838673.3A EP2410584B1 (en) | 2009-01-20 | 2009-12-09 | Method for manufacturing thermoelectric cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101051739A CN101483218B (zh) | 2009-01-20 | 2009-01-20 | 一种温差电池的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101483218A true CN101483218A (zh) | 2009-07-15 |
CN101483218B CN101483218B (zh) | 2011-03-09 |
Family
ID=40880233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101051739A Active CN101483218B (zh) | 2009-01-20 | 2009-01-20 | 一种温差电池的制作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8748208B2 (zh) |
EP (1) | EP2410584B1 (zh) |
JP (1) | JP5554786B2 (zh) |
CN (1) | CN101483218B (zh) |
WO (1) | WO2010083706A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010083706A1 (zh) * | 2009-01-20 | 2010-07-29 | 深圳大学 | 一种温差电池及其制造方法 |
CN103096651A (zh) * | 2011-10-31 | 2013-05-08 | 富泰华工业(深圳)有限公司 | 电子装置 |
CN103325935A (zh) * | 2013-05-24 | 2013-09-25 | 深圳大学 | 一种柔性薄膜温差电池及其制作方法 |
CN103604521A (zh) * | 2013-11-04 | 2014-02-26 | 深圳市彩煌实业发展有限公司 | 温敏探头及其制备方法 |
CN105322087A (zh) * | 2014-07-28 | 2016-02-10 | 中国电子科技集团公司第十八研究所 | BiTe基柔性薄膜温差电池 |
CN106252447A (zh) * | 2016-09-23 | 2016-12-21 | 华中科技大学 | 一种复合太阳能电池及其制备方法 |
CN110783448A (zh) * | 2019-07-30 | 2020-02-11 | 武汉理工大学 | 一种基于飞秒激光技术制造微型热电器件的方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017011181A (ja) * | 2015-06-24 | 2017-01-12 | 積水化学工業株式会社 | 熱電変換材料シート及びそれを有する熱電変換デバイス |
US10231364B2 (en) * | 2016-10-24 | 2019-03-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Fluidly cooled power electronics assemblies having a thermo-electric generator |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05327033A (ja) * | 1992-05-15 | 1993-12-10 | Hitachi Ltd | 熱電変換素子及び熱電発電装置 |
JPH0735618A (ja) * | 1993-07-19 | 1995-02-07 | Technova:Kk | 熱電変換素子 |
JP2002151501A (ja) * | 2000-11-13 | 2002-05-24 | Ebara Corp | 基板成膜方法 |
JP4275399B2 (ja) * | 2002-12-24 | 2009-06-10 | 株式会社東海理化電機製作所 | 熱電変換デバイス及び熱電変換デバイスユニット並びに熱電変換デバイスの製造方法 |
US7629531B2 (en) * | 2003-05-19 | 2009-12-08 | Digital Angel Corporation | Low power thermoelectric generator |
WO2005093864A1 (ja) * | 2004-03-25 | 2005-10-06 | National Institute Of Advanced Industrial Science And Technology | 熱電変換素子及び熱電変換モジュール |
CN100477311C (zh) * | 2004-07-01 | 2009-04-08 | 阿鲁策株式会社 | 热电转换模块 |
CN101483218B (zh) * | 2009-01-20 | 2011-03-09 | 深圳大学 | 一种温差电池的制作方法 |
-
2009
- 2009-01-20 CN CN2009101051739A patent/CN101483218B/zh active Active
- 2009-12-09 WO PCT/CN2009/075422 patent/WO2010083706A1/zh active Application Filing
- 2009-12-09 EP EP09838673.3A patent/EP2410584B1/en active Active
- 2009-12-09 JP JP2011545614A patent/JP5554786B2/ja active Active
- 2009-12-09 US US13/145,207 patent/US8748208B2/en active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010083706A1 (zh) * | 2009-01-20 | 2010-07-29 | 深圳大学 | 一种温差电池及其制造方法 |
CN103096651A (zh) * | 2011-10-31 | 2013-05-08 | 富泰华工业(深圳)有限公司 | 电子装置 |
CN103096651B (zh) * | 2011-10-31 | 2016-06-08 | 镇江福科鑫电子科技有限公司 | 电子装置 |
CN103325935A (zh) * | 2013-05-24 | 2013-09-25 | 深圳大学 | 一种柔性薄膜温差电池及其制作方法 |
CN103325935B (zh) * | 2013-05-24 | 2015-10-28 | 深圳大学 | 一种柔性薄膜温差电池及其制作方法 |
CN103604521A (zh) * | 2013-11-04 | 2014-02-26 | 深圳市彩煌实业发展有限公司 | 温敏探头及其制备方法 |
CN103604521B (zh) * | 2013-11-04 | 2016-01-06 | 深圳市彩煌实业发展有限公司 | 温敏探头及其制备方法 |
CN105322087A (zh) * | 2014-07-28 | 2016-02-10 | 中国电子科技集团公司第十八研究所 | BiTe基柔性薄膜温差电池 |
CN106252447A (zh) * | 2016-09-23 | 2016-12-21 | 华中科技大学 | 一种复合太阳能电池及其制备方法 |
CN110783448A (zh) * | 2019-07-30 | 2020-02-11 | 武汉理工大学 | 一种基于飞秒激光技术制造微型热电器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5554786B2 (ja) | 2014-07-23 |
EP2410584A1 (en) | 2012-01-25 |
CN101483218B (zh) | 2011-03-09 |
US8748208B2 (en) | 2014-06-10 |
EP2410584B1 (en) | 2016-09-14 |
US20120064656A1 (en) | 2012-03-15 |
EP2410584A4 (en) | 2014-01-22 |
JP2012516031A (ja) | 2012-07-12 |
WO2010083706A1 (zh) | 2010-07-29 |
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Owner name: SHENZHEN CAIHUANG INDUSTRIAL DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: SHENZHEN UNIV Effective date: 20110720 |
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Free format text: CORRECT: ADDRESS; FROM: 518060 NO. 3688, NANHAI AVENUE, NANSHAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: 518000 CAIHUANG INDUSTRIAL PARK, HAORIZI AVENUE, QINGHU NEIGHBORHOOD COMMITTEE, LONGHUA SUBDISTRICT OFFICE, SHENZHEN CITY |
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Effective date of registration: 20110720 Address after: 518000, Shenzhen Longhua street, Clear Lake neighborhood committee, good day Avenue, color Huang industrial park Patentee after: Shenzhen Caihuang Industrial Development Co., Ltd. Address before: 518060 Nanhai Road, Guangdong, Shenzhen, No. 3688, No. Patentee before: Shenzhen University |
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TR01 | Transfer of patent right |
Effective date of registration: 20180731 Address after: 518000 Guangdong Shenzhen Longhua New District Longhua Street Qing Hu community Qing Lake Village Choi Huang office building 101 Patentee after: Shenzhen color Huang power and Power Technology Co., Ltd. Address before: 518000 Longhua street, Shenzhen, Qing Lake neighborhood committee good days Avenue Choi Huang industrial park Patentee before: Shenzhen Caihuang Industrial Development Co., Ltd. |
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TR01 | Transfer of patent right |