CN101471332A - Optical device containing laser diode and luminous diode - Google Patents
Optical device containing laser diode and luminous diode Download PDFInfo
- Publication number
- CN101471332A CN101471332A CNA2007103063479A CN200710306347A CN101471332A CN 101471332 A CN101471332 A CN 101471332A CN A2007103063479 A CNA2007103063479 A CN A2007103063479A CN 200710306347 A CN200710306347 A CN 200710306347A CN 101471332 A CN101471332 A CN 101471332A
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- CN
- China
- Prior art keywords
- light
- laser diode
- diode chip
- backlight unit
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a lighting device, which at least comprises a base, wherein the base is provided with a or a plurality of laser diode chips and a or a plurality of lighting diode chips, wherein at least a laser diode and a lighting diode is arranged on the base. The lighting device can have characteristic illuminating of the laser diode when an extremely narrow spectrum frequency bandwidth is needed, and characteristic illuminating of the lighting diode which has better heat dissipating characteristics when the extremely narrow spectrum frequency bandwidth is not needed.
Description
Technical field
The present invention relates to light-emitting device.Specifically, the present invention a kind ofly can produce even luminosity, low emission, the light-emitting device that bandwidth is narrower.More particularly, light-emitting device of the present invention is the light-emitting device that comprises at least one laser diode chip and at least one light-emitting diode chip for backlight unit.
Background technology
It is little that laser diode has a volume, high efficiency, and consumed power is little, long service life, and modulate the advantage of its power output easily by size of current.The application that electricity is penetrated diode is relevant with its wavelength of launching, short wavelength's's (390～950 nanometer) laser is mainly used in CD drive, laser printer, barcode machine, optical information and demonstration purposes such as scanner, long wavelength's's (980～1500 nanometer) laser then is mainly used in optical fiber communication.The characteristics of luminescence of laser diode is oval bright dipping, and has low emission, high strength, and bandwidth is narrower, coherence's height.Yet also owing to the light that laser diode sent, its bandwidth is narrower and phase place is consistent, therefore when light beam projects the target area, will cause spot distribution because of interference.On the other hand, the injection current of laser diode must be greater than critical current density, and critical current density is relevant with interface temperature, and the remote-effects benefit.During high-temperature operation, critical current improves, and benefit reduces, even can damage element.
On the other hand, light-emitting diode has the brightness height, the radiating efficiency height, and the advantage of long service life often is applied at electronic marker and mark, display lighting, high brightness indicator or the like.The wide broad of the spectral hand that light-emitting diode sends, therefore when LED source was incident upon the target area, luminosity evenly distributed in the target area, can't produce the phenomenon of spot distribution.
Traditional laser diode package as United States Patent (USP) notification number US 7,060,515, only has the laser diode element in single packaging body, or only has light-emitting diode as U.S. Patent Publication No. US2006267037.The light source that laser diode element and light-emitting diode are sent has complementarity on using.Therefore the present invention wishes that the problem that solves is, how to make lighting device when using, in the occasion of data processing or communications applications, provide bandwidth narrower, the light beam of phase place unanimity, and can be when needs throw light on, provide luminosity to throw light on uniformly, suitable spectral illumination is provided.
Summary of the invention
A purpose of the present invention is how to make lighting device when using, at the wide demand of spectral hand, provides suitable luminescent spectrum and illumination.
The present invention discloses a kind of light-emitting device, it includes a pedestal at least, and on described pedestal, have one or more laser diode chips, with one or more light-emitting diode chip for backlight unit, wherein at least one laser diode chip and a light-emitting diode chip for backlight unit are disposed on the described pedestal.
Make when being applied to need extremely narrow spectral hand wide application the illumination that can have laser diode characteristics.And when not needing the wide application of extremely narrow spectral hand, the illumination that can have the uniform light-emitting diode characteristic of luminosity.
Description of drawings
Figure 1 shows that light-emitting device according to the first embodiment of the present invention.
Figure 2 shows that light-emitting device according to the second embodiment of the present invention.
Figure 3 shows that light-emitting device according to the third embodiment of the present invention.
Figure 4 shows that light-emitting device according to the fourth embodiment of the present invention.
Embodiment
A kind of light-emitting device, it includes a pedestal at least, and on described pedestal, has one or more laser diode chips, with one or more light-emitting diode chip for backlight unit, wherein at least one laser diode chip and a light-emitting diode chip for backlight unit are disposed on the described pedestal.
Figure 1 shows that first embodiment, a kind of light-emitting device 10, it includes a bottom base 11, a footstock (header) 12 is positioned on the bottom base 11, at a side of footstock 12 pedestal (submount) 13 once, and at least one laser diode chip 14 is arranged in a side of inferior pedestal, with respect to the position of laser diode one inspection optical diode 15 is arranged at bottom base 11, in general, the position 15 of inspection optical diode is opposite with the main light direction of laser diode chip 14, as shown in Figure 1a, and on footstock 12, have at least one light-emitting diode chip for backlight unit 16, light-emitting diode chip for backlight unit also can be disposed on the bottom base 11.And top cover (cap) 17 can cover on bottom base; protection laser diode chip and light-emitting diode chip for backlight unit; and a side of top cover has a transparent light hole; can make the luminous of laser diode chip and light-emitting diode chip for backlight unit; can penetrate light source through light hole thus; and several conductive connecting pins 18 electrically connect with laser diode chip 14 and light-emitting diode chip for backlight unit 16, to provide laser diode chip 14 and light-emitting diode chip for backlight unit 16 required power supply.
The material of the footstock 12 on the bottom base 11 is the highly heat-conductive material metal, can conduct the heat that laser diode chip 14 and light-emitting diode chip for backlight unit 16 produce whereby, and inferior pedestal 13 materials is insulating material, as ceramic material.According to the present invention, laser diode chip 14 can be via identical heat dissipation path heat radiation with light-emitting diode chip for backlight unit 16.
In the embodiment of the invention 1, same side or different sides at inferior pedestal can have several laser diode chips, and described laser diode chip can be identical wavelength or different wave length, and each laser diode chip can be controlled it separately and goes out luminous intensity.And on inferior pedestal, also can have several light-emitting diode chip for backlight unit, and each light-emitting diode chip for backlight unit also can be homochromy or not homochromy.The bright dipping simultaneously of laser diode and light-emitting diode, or the laser diode chip bright dipping is only arranged on demand, or only light-emitting diode chip for backlight unit bright dipping.Different wavelength of laser diode chip for backlight unit and light-emitting diode chip for backlight unit mutual encapsulation are in same construction unit, and it is long-pending little to reach packaging housing, and cost is low, and advantage such as have wide range of applications.
Second embodiment as shown in Figure 2, light-emitting device 20, it includes a bottom base 21, one or more footstocks (header) 22, the sidewall of footstock 22 has the gradient of a predetermined angle, α can be more than or equal to 0, and there is the gradient of a predetermined angular β top of footstock 22, β can be more than or equal to 0, the α that can have differing tilt angles in the different sides of footstock, and the β that can have a plurality of different sizes on the footstock, and the arbitrary sidewall on the footstock 22 has one or more times pedestal (submount) 23, at least one laser diode chip 24 is arranged on inferior pedestal, and inferior pedestal 23 also can be on the footstock with β angle with laser diode chip 24.With the opposite relative position of laser diode chip 24 main light directions, configurable inspection optical diode 25, to detect the optical property that of described laser diode chip, feedback modulated laser diode goes out luminous intensity whereby.The sidewall of footstock 22 or above, have at least one light-emitting diode chip for backlight unit 16.Several conductive connecting pins 28 are electrically connected with laser diode chip and light-emitting diode chip for backlight unit around pedestal, to provide laser diode chip 24 and light-emitting diode chip for backlight unit 26 required power supply.
The light direction of laser diode chip 24, design angle α and β by footstock controlled with the light direction of light-emitting diode chip for backlight unit 26, and the light direction that makes several laser diode chips 24 can be parallel or not parallel, equally, the light direction of several light-emitting diode chip for backlight unit 26 can be parallel or not parallel, and the light direction of laser diode chip 24 and light-emitting diode chip for backlight unit 26, also can be parallel to each other or not parallel.Light direction designs according to demands of applications.
Identical with embodiment 1, each laser diode chip and light-emitting diode chip for backlight unit can independently be controlled.The luminous intensity that goes out of each laser diode can be detected by the inspection optical diode 25 of its correspondence, and feedback control.Each construction unit can hold the laser diode of several identical or different wavelength, and the light-emitting diode of identical or different glow color, therefore can make range of application more extensive in limited volume.
The third enforcement aspect of the present invention as shown in Figure 3, a kind of light-emitting device 30, it includes a bottom base 31, one or more footstocks 32, footstock 32 has one or more times pedestal 33, and described pedestal can have a predetermined γ angle, γ can be more than or equal to 0, configurable one or more laser diode chip 34 and one or more light-emitting diode chip for backlight unit 36 on one pedestal 33, because pedestal has predetermined γ angle, and the γ of pedestal can be identical or different each time, so that the light direction of each laser diode chip 34 and each light-emitting diode chip for backlight unit 36 can be parallel or not parallel, light direction designs according to demands of applications.Each laser diode chip and light-emitting diode chip for backlight unit can independently be controlled.The luminous intensity that goes out of each laser diode can be detected by the inspection optical diode 35 of its correspondence, and feedback control.
The 4th embodiment as shown in Figure 4, a kind of light-emitting device 40 includes a bottom base 41, one or more footstocks 42, footstock 42 has one or more times pedestal 43, and dispose a kind of chip 44 that can be luminous on the pedestal each time, and described chip 44 has laser diode characteristics unit and light-emitting diode characteristics unit, and have a predetermined θ angle between the laser diode rising angle of described chip and light-emitting diode rising angle, θ can be more than or equal to 0, in addition by footstock 42, the design of inferior pedestal 43 and the design of chip component also can determine the laser diode unit of described luminescence chip and the light direction of light emitting diode.
Claims (9)
1. light-emitting device, it comprises a pedestal, one or more laser diode chips and one or more light-emitting diode chip for backlight unit, wherein at least one laser diode chip and a light-emitting diode chip for backlight unit are disposed at described pedestal.
2. light-emitting device according to claim 1, wherein said laser diode chip includes the light direction of first direction at least, and described light-emitting diode chip for backlight unit includes the light direction of second direction at least.
3. light-emitting device according to claim 2, the light direction of the described first direction of wherein said laser diode chip can be by the shape decision of pedestal.
4. light-emitting device according to claim 2, the light direction of the described second direction of wherein said light-emitting diode chip for backlight unit can be by the shape decision of pedestal.
5. light-emitting device according to claim 2, the light direction of the light direction of the first direction at least of described laser diode chip and the second direction at least of described light-emitting diode chip for backlight unit can be parallel or not parallel.
6. light-emitting device according to claim 1, it further comprises the inspection optical diode.
7. light-emitting device, it comprises a pedestal and chip that at least one contains laser diode characteristics and contains the light-emitting diode characteristic.
8. light-emitting device according to claim 7, wherein said laser diode characteristics has the light direction of first direction, and described light-emitting diode characteristic contains the light direction of second direction at least.
9. light-emitting device according to claim 8, the light direction of wherein said first direction and the light direction of described second direction can be determined by the shape of pedestal, or determined by the configuration of described optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103063479A CN101471332A (en) | 2007-12-28 | 2007-12-28 | Optical device containing laser diode and luminous diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103063479A CN101471332A (en) | 2007-12-28 | 2007-12-28 | Optical device containing laser diode and luminous diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101471332A true CN101471332A (en) | 2009-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007103063479A Pending CN101471332A (en) | 2007-12-28 | 2007-12-28 | Optical device containing laser diode and luminous diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101471332A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104200780A (en) * | 2014-08-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Display system |
| WO2017109428A1 (en) * | 2015-12-24 | 2017-06-29 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for observing a sample by lensless imaging |
-
2007
- 2007-12-28 CN CNA2007103063479A patent/CN101471332A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104200780A (en) * | 2014-08-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Display system |
| WO2017109428A1 (en) * | 2015-12-24 | 2017-06-29 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for observing a sample by lensless imaging |
| FR3046238A1 (en) * | 2015-12-24 | 2017-06-30 | Commissariat Energie Atomique | METHOD FOR OBSERVING A SAMPLE BY IMAGING WITHOUT LENS |
| KR20180097679A (en) * | 2015-12-24 | 2018-08-31 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | Method for observing a sample by lensless imaging |
| CN108496070A (en) * | 2015-12-24 | 2018-09-04 | 原子能和替代能源委员会 | The method for observing sample by no lens imaging |
| JP2019509466A (en) * | 2015-12-24 | 2019-04-04 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | Method for observing a sample by lensless image processing |
| CN108496070B (en) * | 2015-12-24 | 2021-06-22 | 原子能和替代能源委员会 | Method for observing a sample by lens-free imaging |
| US11221290B2 (en) | 2015-12-24 | 2022-01-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for observing a sample by lensless imaging |
| KR102562719B1 (en) | 2015-12-24 | 2023-08-03 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | Method for observing a sample by lensless imaging |
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Open date: 20090701 |