CN101464188B - Method for improving photoelectric sensor sensibility - Google Patents

Method for improving photoelectric sensor sensibility Download PDF

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Publication number
CN101464188B
CN101464188B CN2008101546351A CN200810154635A CN101464188B CN 101464188 B CN101464188 B CN 101464188B CN 2008101546351 A CN2008101546351 A CN 2008101546351A CN 200810154635 A CN200810154635 A CN 200810154635A CN 101464188 B CN101464188 B CN 101464188B
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photoelectric sensor
raising
sensor
reference light
tested
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CN101464188A (en
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李刚
汤宏颖
林凌
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Tianjin University
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Tianjin University
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Abstract

The invention discloses a method for improving the sensitivity of a photoelectric sensor. The method comprises the following steps: a beam of high-frequency modulation reference light is applied in front of the photoelectric sensor; the high-frequency modulation reference light and an optical signal to be tested are converted by the photoelectric sensor into electrical signals; digital signals can be obtained by subjecting the electrical signals to amplification and analog-to-digital conversion; and the optical signal to be tested is calculated after subjecting the digital signal obtained in a cycle to the superposition in a computer. The high-frequency modulation reference light and the optical signal to be tested are reflected to the photoelectric sensor by a semi-permeable semi-reflector. The photoelectric sensor can be a photodiode, a phototriode, a photomultiplier, a photoresistance or an array type photoelectric sensor. The array type photoelectric sensor can be a CMOS picture sensor, a CCD picture sensor or a cathode ray picture sensor. The invention is simple and convenient, and greatly improves the sensitivity of the photoelectric sensor, thereby enhancing the accuracy of weak light measuring. The invention can be applied to weak light or image measuring technologies.

Description

Improve the method for photoelectric sensor sensibility
Technical field
The present invention relates to a kind of photoelectric sensor.Particularly relate to the method for a kind of raising to the raising photoelectric sensor sensibility of faint light measuring accuracy.
Background technology
Photosignal detects and has a wide range of applications in each fields such as scientific research, industrial or agricultural and military affairs, particularly faint optical signal is detected, and more and more urgent requirement is arranged.But the sensitivity of any photoelectric sensor all has certain restriction.And then make the sensitivity of instrument be restricted.The sensitivity that people often adopt technology such as modulation, coherent detection to improve photoelectric sensor and corresponding instrument, but these methods have all strengthened the complicacy of instrument, and can not improve the sensitivity of sensor.
Summary of the invention
Technical matters to be solved by this invention is, overcomes the deficiencies in the prior art, and a kind of sensitivity that can directly improve photoelectric sensor is provided, thereby improves the method to the raising photoelectric sensor sensibility of faint light measuring accuracy.
The technical solution adopted in the present invention: a kind of method that improves photoelectric sensor sensibility, before photoelectric sensor, apply a branch of high frequency modulated reference light, make described high frequency modulated reference light after tested light signal becomes electric signal by conversion of photoelectric sensor, obtain digital signal through amplification and analog to digital conversion successively again, then, with the machine stack back and deduct the mean value of high frequency modulated reference light as calculated of the digital signal in the resulting one-period, thereby calculate tested light signal.
Described high frequency modulated reference light and tested light signal are to shine on the photoelectric sensor by semi-transparent semi-reflecting light microscopic.
Described photoelectric sensor is a photodiode.
Described photoelectric sensor is a phototriode.
Described photoelectric sensor is a photomultiplier.
Described photoelectric sensor is photoresistance.
Described photoelectric sensor is the array optical electric transducer.
Described array optical electric transducer is a cmos image sensor.
Described array optical electric transducer is a ccd image sensor.
Described array optical electric transducer is the cathode ray imageing sensor.
The method of raising photoelectric sensor sensibility of the present invention, simple and convenient, just when photoelectric sensor receives tested faint light or image, apply a branch of periodic high frequency references light, amplify and analog to digital conversion through opto-electronic conversion, signal, can increase substantially the sensitivity of photoelectric sensor, thereby improve by COMPUTER DETECTION to tested faint light or image the faint light measuring accuracy.Can be applied in faint light or the image measurement technology.
Description of drawings
Fig. 1 is that device used in the present invention constitutes block scheme;
Fig. 2 is that principle of work of the present invention is with scheming.
Wherein:
1: semi-transparent semi-reflecting light microscopic 2: photoelectric sensor
3: amplifier 4: analog to digital converter
5: computing machine
Embodiment
Make a detailed description below in conjunction with embodiment and accompanying drawing method raising photoelectric sensor sensibility of the present invention.
The method of raising photoelectric sensor sensibility of the present invention is to realize on the device shown in 1.
Device shown in Figure 1 includes: the semi-transparent semi-reflecting light microscopic 1 that sets gradually, photoelectric sensor 2, amplifier 3, analog to digital converter 4 and computing machine 5.
The method of raising photoelectric sensor sensibility of the present invention is to apply a branch of high frequency modulated reference light L before photoelectric sensor 2 f, make described high frequency modulated reference light L fWith tested light signal L sShine on the photoelectric sensor 2 by semi-transparent semi-reflecting light microscopic 1 together, after converting electric signal to by photoelectric sensor 2, again successively through amplifying and analog to digital conversion obtains digital signal, then, machine 5 stacks are afterwards and deduct high frequency modulated reference light L as calculated with the digital signal in the resulting one-period fMean value L fThereby, calculate tested light signal L s(wherein N is a high frequency modulated reference light L to described computing formula fCycle in sampling number):
L s ‾ = L ‾ - L f ‾ = 1 N Σ i = 1 N L i - 1 N Σ i = 1 N L f = 1 N Σ i = 1 N ( L s + L f ) - 1 N Σ i = 1 N L f = 1 N Σ i = 1 N L s
Employed photoelectric sensor 2 in this method can be photodiode or phototriode or photomultiplier or photoresistance.
The photoelectric sensor 2 of described use can also be the array optical electric transducer.Described array optical electric transducer can be cmos image sensor or ccd image sensor or cathode ray imageing sensor.
The principle of work of the method for raising photoelectric sensor sensibility of the present invention is:
As shown in Figure 2, suppose tested light signal L sBe Δ X=0.6LSB (LSB represents a minimum sensitivity or quantization level), less than sensor can be responsive minimum 1LSB.Obviously, can not detect with photoelectric sensor 1 by photometry.If the high frequency modulated reference light L that applies fBe one and highly be the sawtooth wave of 1LSB, and ask average again after in a sawtooth period, gathering 10 signals:
L ‾ = 1 10 Σ i = 1 10 L i = 1 10 Σ i = 1 10 ( L si + L fi ) = 1 10 ( 0 + 0 + 0 + 0 + 1 + 1 + 1 + 1 + 1 + 1 ) = 0.6 LSB
Consider L fBe one and highly be the sawtooth wave of 1LSB, (promptly the mean value that only sampling is obtained is a very little value to its mean value, is about 0.1LSB in this example.Sampling number N is big more, and this average is more little) very little to the influence of measurement result.In fact, do not really want to limit L fAt the height of 1 LSB, L fAmplitude can be much larger than 1LSB; Need not be limited to L yet fOne-period sampling 10, the big more effect of interim weekly sampling number is then good more; Also do not need to limit L fBeing sawtooth wave, also can be triangular wave, sine wave etc.
Provide specific embodiments of the invention below.
Embodiments of the invention one:
As shown in Figure 1, tested faint optical signal L sShine photoelectric sensor 2 through semi-transparent semi-reflecting light microscopic 1, simultaneously, high frequency modulated reference light L fAlso shine photoelectric sensor 2 through semi-transparent semi-reflecting light microscopic 1, this two-beam is after photoelectric sensor 2 stacks and convert electric signal to by amplifier 3 amplifications, convert digital signal to by analog to digital converter 4 again and send into computing machine 5, in computing machine 5,, isolate tested faint optical signal L by computing formula sAnd remove high frequency modulated reference light L fL in the present embodiment fCan be produced by common luminotron LED, photoelectric sensor 2 can adopt phototriode 3DU13.
Embodiments of the invention two:
As shown in Figure 1, tested faint light (image) signal L sShine electro-optical imaging sensors 2 through semi-transparent semi-reflecting light microscopic 1, simultaneously, high frequency modulated reference light L fAlso shine electro-optical imaging sensors 2 through semi-transparent semi-reflecting lens 1, this two-beam signal is after electro-optical imaging sensors 2 stacks and convert electric signal to by amplifier 3 amplifications, convert digital signal to by analog to digital converter 4 again and send into computing machine 5, in computing machine 5 by computing formula with L fOne-period in the digital signal phase adduction of same pixel deduct high frequency modulated reference light L fMean value, thereby isolate tested faint light (image) L sL in the present embodiment fCan be produced by common luminotron LED, electro-optical imaging sensors 2 can adopt CCD camera 13HV13.

Claims (10)

1. method that improves photoelectric sensor sensibility is characterized in that: apply a branch of high frequency modulated reference light (L in that photoelectric sensor (2) is preceding f), make described high frequency modulated reference light (L f) and tested light signal (L s) convert electric signal to by photoelectric sensor (2) together after, more successively through amplifying and analog to digital conversion obtains digital signal, then, machine (5) stack is afterwards and deduct high frequency modulated reference light (L as calculated with the digital signal in the resulting one-period f) mean value (L f), thereby calculate tested light signal (L s).
2. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described high frequency modulated reference light (L f) and tested light signal (L s) be to shine on the photoelectric sensor (2) by semi-transparent semi-reflecting light microscopic (1).
3. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described photoelectric sensor (2) is a photodiode.
4. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described photoelectric sensor (2) is a phototriode.
5. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described photoelectric sensor (2) is a photomultiplier.
6. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described photoelectric sensor (2) is photoresistance.
7. the method for raising photoelectric sensor sensibility according to claim 1 is characterized in that, described photoelectric sensor (2) is the array optical electric transducer.
8. the method for raising photoelectric sensor sensibility according to claim 7 is characterized in that, described array optical electric transducer is a cmos image sensor.
9. the method for raising photoelectric sensor sensibility according to claim 7 is characterized in that, described array optical electric transducer is a ccd image sensor.
10. the method for raising photoelectric sensor sensibility according to claim 7 is characterized in that, described array optical electric transducer is the cathode ray imageing sensor.
CN2008101546351A 2008-12-29 2008-12-29 Method for improving photoelectric sensor sensibility Active CN101464188B (en)

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Publication number Priority date Publication date Assignee Title
CN102082956A (en) * 2010-12-28 2011-06-01 天津大学 Method for enhancing sensitivity of image sensor
CN104344887B (en) * 2014-10-29 2016-04-13 华中科技大学 A kind of high speed Larger Dynamic photoelectric detection system
CN105590941B (en) * 2016-03-04 2018-12-28 北华大学 A method of improving photoelectric sensor and photosensitive material Dim light measurement ability
CN106094056A (en) * 2016-06-16 2016-11-09 扬州大学 The energy-saving weather monitoring instrument of a kind of automatic dust removing defrosting

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Assignee: Donge Ejiao Ehua Medical Equipment Co., Ltd.

Assignor: Tianjin University

Contract record no.: 2011990001026

Denomination of invention: Method for improving photoelectric sensor sensibility

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Assignee: Donge Ejiao Ehua Medical Equipment Co., Ltd.

Assignor: Tianjin University

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