CN101447517B - Thin film type solar power current collection tube device - Google Patents
Thin film type solar power current collection tube device Download PDFInfo
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- CN101447517B CN101447517B CN 200810240607 CN200810240607A CN101447517B CN 101447517 B CN101447517 B CN 101447517B CN 200810240607 CN200810240607 CN 200810240607 CN 200810240607 A CN200810240607 A CN 200810240607A CN 101447517 B CN101447517 B CN 101447517B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a thin film type solar power current collection tube device, and belongs to the field of main electrical elements. The device comprises an outer tube, an inner tube, a battery component and two lead wires; wherein, the inner tube is inserted in the outer tube, and further the both ends of the inner tube are parallel to the both ends of the outer tube; the battery component is arranged on the outer wall of the inner tube; the lead wires are respectively connected with the two ends of the battery component on the outer wall of the inner tube; the battery component comprises a back electrode layer, a light absorption and photoelectric conversion layer and a transparency electrode layer, and the three layers of the battery component are cascaded on the outer wall of the inner tube from inside to outside in sequence. The invention can overcome the factors of low production yield and high process equipment requirement in the prior planar thin film solar power battery, meanwhile, adopts the thickness of glass tube wall which is thinner than that of the planar glass tube wall, and reduces the manufacturing cost.
Description
Technical field
The invention belongs to the essential electronic element field, particularly a kind of structural design of thin film type solar power current collection tube device.
Background technology
Problem of energy crisis has become the key issue that restriction is developed the economy at present and built.The solar radiation that earth surface is accepted can satisfy 10,000 times of global energy demand.The every square metre of radiation that is subjected to every year on average in the face of land can be produced 1700kWh.The International Energy Agency data show, on the desert in the whole world 4% solar cell system are installed, and just are enough to satisfy the global energy demand.Solar cell mainly is divided into two classes, and a class is a crystal silicon solar batteries, comprises two kinds in monocrystalline silicon (sc-Si) solar cell, polysilicon (mc-Si) solar cell.There is the production cost height in existing crystal silicon solar batteries, high energy consumption and problem such as seriously polluted in the production process.Most equipment of crystal silicon solar batteries production line and expense of raw materials costliness that China is present, it is very low to produce added value; Another kind of is thin-film solar cells, mainly comprise amorphous silicon (a-Si, use be silicon, but with the performance of different form), Copper Indium Gallium Selenide (CIGS) and cadmium telluride (CdTe) solar cell.
Absorbing layer of thin film solar cell thickness is about several microns, has significantly reduced expensive material consumption compared with crystal silicon solar batteries (absorbed layer is the thinnest also to need 150 microns), so the production cost of thin-film solar cells is lower than crystal silicon solar batteries; On the other hand, most effective Copper Indium Gallium Selenide (CIGS) solar cell of conversion in the thin-film solar cells, no matter be the little print in laboratory, or the large tracts of land assembly is all near the level of polysilicon solar cell.So thin-film solar cells develops into second generation solar cell gradually.But, the weak point of this technology is: first, present thin-film solar cells mostly is plate armature, as shown in Figure 1, comprise that substrate 101 is arranged on the battery component 102 of this suprabasil membrane structure and the contact conductor that links to each other with battery component, this battery component comprises three layers, be followed successively by dorsum electrode layer, light absorption and photoelectric conversion layer, transparent electrode layer from inside to outside, wherein dorsum electrode layer can be simple metal molybdenum (Mo) film, also the laminated film of metal molybdenum (Mo) and crome metal (Cr) composition; Photoelectric absorption and conversion layer can be the heterojunction that Copper Indium Gallium Selenide (CIGS) and cadmium sulfide (CdS) are formed, and also can be the heterojunction that cadmium telluride (CdTe) and cadmium sulfide (CdS) are formed, perhaps PN junction of different doped silicon materials or the like; Transparent electrode layer can be ITO (tin indium oxide) film, also can be zinc oxide (ZnO:B, ZnO:Al, ZnO:Ga) film of IIIA family element doping.The area battery assembly photoelectric conversion efficiency of this structure is also lower, and general about 10%; The second, in order to guarantee the annual production of production line, need do the area of battery component very greatly, 0.9 meter * 0.7 meter, 1.2 meters * 1.6 meters of stock sizes etc., big like this area easily since individually flaw points influence whole efficiency, thereby reduced rate of finished products; The 3rd, plane formula large area film solar cell, its substrate mostly is glass material, (area is big more for thickness 3-5 millimeter, thickness is thick more), the production high material consumption, and produce owing to generally need high vacuum production equipment (general per step can only be processed to two), area battery assembly to cause that production equipment is huge, cost is high; The 4th, in extensive cell engineering, in order to overcome the shade influence of tilting to put cell panel, necessary enough at interval distances between the battery substrate plate, making it take up an area of utilization rate so is not very high (mostly being below 50%), thereby has reduced the utilance of unit soil luminous energy.
Summary of the invention
The objective of the invention is to propose a kind of thin film type solar power current collection tube device for overcoming the prior art weak point, the present invention can or be together in parallel by several current collection pipe series connection and form battery pack, improves the light utilization efficiency and the generating efficiency of unit are greatly.
A kind of thin film type solar power current collection tube device that the present invention proposes, it is characterized in that: this device comprises one or more current collection pipe, each current collection pipe comprises outer tube, interior pipe, battery component and two lead-in wires; Pipe inserts in the outer tube in described, and interior pipe two ends are parallel to the outer tube two ends, and described battery component is arranged on the outer wall of inner tube, and described lead-in wire links to each other with battery component two ends on the outer wall of inner tube respectively.
Characteristics of the present invention and effect:
Because it is tubule device (generally managing diameter less than 4 centimetres) that the present invention changes original large-area flat-plate device, thereby the dimensional requirement to vacuum equipment reduces in process of production, each vacuum equipment can be handled many tubular devices simultaneously simultaneously, thereby has reduced equipment manufacturing cost.
The present invention has also further reduced the plated film area (unit are reduces) of finished product unit, and solar power current collection tube is actual to be that the board-like battery component of large tracts of land is decomposed into a plurality of hollow cast battery components, makes uniform film in process of production easily like this.If wherein a current collection pipe poor quality can be chosen it, and not influence other current collection pipe, improve rate of finished products.
The present invention also further provides encapsulating structure to overcome the influence that steam infiltrates, and has guaranteed the long-time open-air reliability of using of thin film type solar power current collection tube device.The wall thickness of glass tube that each solar power current collection tube adopts is thinner than board-like, the about 1-1.5 millimeter of pipe thickness (plate glass thickness 3-5 millimeter), weight saving, cost also can descend on year-on-year basis.
Because the present invention can or be together in parallel by several current collection pipe series connection, adds the solar cell of reflective tile structure various uses, thereby has improved the light utilization efficiency and the generating efficiency of unit are.
Description of drawings
Fig. 1 is the structure chart of conventional plane thin-film solar cells.
Fig. 2 is the structure chart of cadmium telluride solar power current collection tube of the present invention.
Fig. 3 is the structure chart of copper indium gallium selenium solar current collection pipe of the present invention.
Fig. 4 is battery component preparation process figure of the present invention.
Fig. 5 is thin film type solar power current collection tube device structure chart of the present invention (an attached reflective tile).
Embodiment
The thin film type solar power current collection tube device that the present invention proposes reaches embodiment in conjunction with the accompanying drawings and is described in detail as follows:
Embodiment 1 is a Cadimium telluride thin film type solar power current collection tube device, its structure as shown in Figure 2, this device comprises outer tube 201, interior pipe 202, battery component 203, positive wire 204, negative wire 205, two end electrodes sealing-in mouth 206.Pipe 202 inserts in the outer tubes 201 in described, and interior pipe 202 two ends are parallel to outer tube 201 two ends, and battery component 203 is arranged on the outer wall of inner tube, and lead-in wire 204 and lead-in wire 205 link to each other with the two ends, the left and right sides of battery component on the outer wall of inner tube respectively.The outer tube 201 of this device is hollow structure with interior pipe 202, and outer tube 201 all has electrode sealing-in mouth 206 with interior pipe 202 two ends, and the positive and negative polarities in this device 204,205 are drawn from the two ends of this device respectively by going between.The effect of two ends sealing-in mouth 206 is the spaces between interior pipe 202 of sealing and the outer tube 201, and sealing-in mouth 206 in two ends is uncovered structure in the inner spout footpath with interior part, so that the circulation of coolant.
The cross sectional shape of the interior pipe 202 of present embodiment 1 is circular.The material of interior pipe is a transparency material, as glass, quartz glass, macromolecular material etc.
The outer tube effect of present embodiment 1 is the battery component that guarantees photopermeability and protection outer wall of inner tube, and the material of outer tube mostly is transparency material, as glass or macromolecular compound (EVA, PE) etc.
Because solar power current collection tube needs long-time open-air the placement to use, infiltrate in order to prevent steam, present embodiment is added with water absorbing agent (as anhydrous silica gel etc.) in an end of pipe.
The battery component 203 of present embodiment 1 is arranged on the outer wall of inner tube, and this battery component comprises three layers, is followed successively by dorsum electrode layer, light absorption and photoelectric conversion layer, transparent electrode layer from inside to outside.The dorsum electrode layer material is simple metal molybdenum (Mo) film; The light absorbing material that deposits on light absorption and the photoelectric conversion layer is a cadmium telluride, with the P type semiconductor of this material as battery, and deposits N type semiconductor (as: CdS etc.) composition PN junction (heterojunction) on P type semiconductor; The material of transparent electrode layer is ITO (tin indium oxide) film.
Embodiment 2 is a CIGS thin-film type solar power current collection tube device, its structure as shown in Figure 3, this device comprises outer tube 301, interior pipe 302, battery component 303, lead-in wire 305, lead-in wire 308, two electrodes 309, electrode sealing-in mouth 307, blind end 304.Pipe 302 inserts in the outer tubes 301 in described, and interior pipe 302 two ends are parallel to outer tube 301 two ends, and battery component 303 is arranged on the outer wall of inner tube, and lead-in wire 308 and lead-in wire 305 link to each other with the two ends, the left and right sides of battery component on the outer wall of inner tube respectively.The outer tube 301 and the interior pipe 302 of this device are hollow structure, and outer tube and interior Guan Yiduan pass through high temperature ablation, interior pipe, outer tube fusion cooling are condensed and are become blind end 304, the other end is by 307 sealing-ins of electrode sealing-in mouth, and the electrode positive and negative polarities in this device are drawn by an end of closure sealing from this device by lead-in wire 305,308.Between inside and outside two pipes of this device, can feed an amount of inert gas (as nitrogen, argon gas), play certain heat conduction and protective effect.
The cross sectional shape of the interior pipe 302 of present embodiment 2 is circular.The material of interior pipe is opaque material, as metals such as steel, copper, aluminium, pottery, opaque macromolecular material etc.
The outer tube effect of present embodiment 2 is the battery components that guarantee photopermeability and protection outer wall of inner tube, and the material of outer tube mostly is transparency material, as glass or macromolecular compound (EVA, PE) etc.
The battery component 303 of present embodiment 2 is arranged on the outer wall of inner tube, and this battery component comprises three layers, is followed successively by dorsum electrode layer, light absorption and photoelectric conversion layer, transparent electrode layer from inside to outside.The dorsum electrode layer material is the laminated film that metal molybdenum (Mo) and crome metal (Cr) are formed; The light absorbing material that deposits on light absorption and the photoelectric conversion layer is a Copper Indium Gallium Selenide, with the P type semiconductor of this material as battery, and deposits N type semiconductor (as: CdS etc.) composition PN junction (heterojunction) on P type semiconductor; The material of transparent electrode layer be IIIA family element doping zinc oxide (ZnO:B, ZnO:Al, ZnO:Ga).
Battery component preparation process of the present invention as shown in Figure 4, be divided into be six the step a～f:
A earlier at outer wall of inner tube 401 deposition one deck back electrode materials 402, forms dorsum electrode layer, and the back electrode material can be simple metal molybdenum (Mo) film, also the laminated film of metal molybdenum (Mo) and crome metal (Cr) composition.The mode of back electrode material deposition can be a magnetron sputtering, also can be methods such as electro-deposition.
B on the dorsum electrode layer surface, carves some the strias that are parallel to each other 403 with the method for laser ablation along the outer wall of inner tube circumference, and the width of every groove is the 80-160 micron, and the distance between the adjacent slot is the 5-15 millimeter, and groove depth is until outer wall of inner tube.
C, on the basis of finishing for second step, continue deposition photoelectric absorption, transition material, form light absorption and photoelectric conversion layer 404, this light absorption, transition material can be the heterojunction that Copper Indium Gallium Selenide (CIGS) and cadmium sulfide (CdS) are formed, also can be the heterojunction that cadmium telluride (CdTe) and cadmium sulfide (CdS) are formed, perhaps PN junction of different doped silicon materials or the like.
D, in phase the same side of each bar stria 403, at a distance of being 80-160 micron place, etching light absorption and photoelectric conversion layer 404 form some strias 405, and stria 405 all is parallel to stria 403.The mode of stria 405 etchings can adopt laser ablation, also can adopt mechanical etching (needle point etc.).The groove width 80-160 micron of stria 405, groove depth is to dorsum electrode layer 402 surfaces.
E, the transparent electrode layer 406 of deposition battery, the material of this transparent electrode layer can be ITO (tin indium oxide) film, also can be the zinc oxide (ZnO:B of IIIA family element doping, ZnO:Al, ZnO:Ga), preparation method can be a physical vapor deposition (PVD), as magnetron sputtering, it also can be chemical meteorology deposition (CVD), as organic metallochemistry vapor phase deposition, can also be some other mode, as ink-jet thermal decomposition or the like.
F, in phase the same side of each bar stria 405 (being in stria 405 both sides respectively with stria 403), at a distance of being 80-160 micron place, etching forms some strias 407.Stria 407 all is parallel to stria 405.The mode of stria 407 etchings can adopt laser ablation, also can adopt mechanical etching (needle point etc.).The groove width 80-160 micron of stria 407, groove depth is to dorsum electrode layer 402 surfaces.
The material and the preparation method that select for use in above-mentioned each processing step are identical with the battery component of existing plate armature, just reduced the plated film area (unit are reduces) of finished product unit in process of production, dimensional requirement to vacuum equipment reduces, each vacuum equipment can be handled many tubular devices simultaneously simultaneously, thereby reduced equipment manufacturing cost, and improved rate of finished products.
Solar power current collection tube of the present invention is the battery pack that is together in series and is formed by several monocells.The effect of three etchings is to cut off being connected in parallel between the monocell, and makes it form series connection.
Thin film type solar power current collection tube device of the present invention can adopt the connected mode of series connection that many solar power current collection tubes are coupled together, and be sidelong at one of assembly and put reflective tile the low reflective focusing of multiple is provided, form as Fig. 5, comprise reflective tile 501, solar power current collection tube 502, reflective surface 503.So just can provide than a power output (higher curtage) that current collection pipe battery is higher, improve the capacity factor of unit are simultaneously.
Claims (5)
1. a thin film type solar power current collection tube device is characterized in that, this device comprises outer tube, interior pipe, battery component and two lead-in wires; Pipe inserts in the outer tube in described, and interior pipe two ends are parallel to the outer tube two ends, described battery component is arranged on the outer wall of inner tube, described lead-in wire links to each other with battery component two ends on the outer wall of inner tube respectively, and dorsum electrode layer, light absorption and photoelectric conversion layer, transparent electrode layer that this battery component stacks gradually from inside to outside on outer wall of inner tube are formed.
2. device as claimed in claim 1, it is characterized in that, the outer tube of this device and interior pipe are hollow structure, and outer tube and interior pipe two ends are provided with in the sealing electrode sealing-in mouth in space between the pipe and outer tube, and the positive and negative polarities in this device are drawn from the two ends of this device respectively by going between.
3. device as claimed in claim 1, it is characterized in that, the outer tube of this device and interior pipe are hollow structure, and outer tube and interior Guan Yiduan are blind end, the other end is provided with the electrode sealing-in mouth in space between interior pipe of sealing and the outer tube, and the electrode positive and negative polarities in this device are drawn from an end of this electrode sealing-in mouth by lead-in wire.
4. as claim 2 or 3 described devices, it is characterized in that, between these inside and outside two pipes, be connected with inert gas.
5. as claim 2 or 3 described devices, it is characterized in that the cross sectional shape of described interior pipe is circular, the material of interior pipe is the opaque materials material, and the material of outer tube is the transparency material material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200810240607 CN101447517B (en) | 2008-12-26 | 2008-12-26 | Thin film type solar power current collection tube device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810240607 CN101447517B (en) | 2008-12-26 | 2008-12-26 | Thin film type solar power current collection tube device |
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| CN101447517A CN101447517A (en) | 2009-06-03 |
| CN101447517B true CN101447517B (en) | 2011-03-30 |
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| CN 200810240607 Expired - Fee Related CN101447517B (en) | 2008-12-26 | 2008-12-26 | Thin film type solar power current collection tube device |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011020293A1 (en) * | 2009-08-20 | 2011-02-24 | 宇威光电股份有限公司 | Solar cell module |
| CN103050554B (en) * | 2012-12-07 | 2015-04-01 | 上海交通大学 | Solar heat collection and power generation integral film and power generation and heat collection water heater comprising same |
| CN104795459A (en) * | 2015-04-28 | 2015-07-22 | 广西智通节能环保科技有限公司 | Solar cell utilizing heat fully |
| CN104882496A (en) * | 2015-04-28 | 2015-09-02 | 广西智通节能环保科技有限公司 | Cylindrical solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330413A (en) * | 2000-06-27 | 2002-01-09 | 佳能株式会社 | Photoelectric element, its manufacturing method and solar battery module |
| CN1612360A (en) * | 2003-10-31 | 2005-05-04 | 孔维铭 | Solar photovoltaic cell tube |
| CN101237200A (en) * | 2008-03-05 | 2008-08-06 | 云南师范大学 | Slot light- focused solar light voltage thermal compound heat collector |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330413A (en) * | 2000-06-27 | 2002-01-09 | 佳能株式会社 | Photoelectric element, its manufacturing method and solar battery module |
| CN1612360A (en) * | 2003-10-31 | 2005-05-04 | 孔维铭 | Solar photovoltaic cell tube |
| CN101237200A (en) * | 2008-03-05 | 2008-08-06 | 云南师范大学 | Slot light- focused solar light voltage thermal compound heat collector |
Non-Patent Citations (1)
| Title |
|---|
| CN 1330413 A,摘要、说明书9-10页、图1B. |
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