CN101445934A - Method for removing gold coating on gallium aluminum arsenide material surface - Google Patents
Method for removing gold coating on gallium aluminum arsenide material surface Download PDFInfo
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- CN101445934A CN101445934A CNA2008101366325A CN200810136632A CN101445934A CN 101445934 A CN101445934 A CN 101445934A CN A2008101366325 A CNA2008101366325 A CN A2008101366325A CN 200810136632 A CN200810136632 A CN 200810136632A CN 101445934 A CN101445934 A CN 101445934A
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- Prior art keywords
- material surface
- aluminum arsenide
- gallium aluminum
- gold coating
- arsenide material
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Abstract
The invention relates to a method for removing a gold coating on a gallium aluminum arsenide material surface. The method is characterized in that aquafortis with the volume ratio of 20%-35% is added into and mixed with potassium iodide solution or ammonium iodide solution containing iodine, and obtained mixture is used to remove the gold coating on a gallium aluminum arsenide ternary mixed crystal material surface. The invention has the technical effects as follows: the method is easy to implement, has no rank poison and has stable and reliable property; by adopting the method, a slight passive film can be formed on a semiconductor material surface while removing the gold coating, thereby relieving impairment of reagent on the material surface.
Description
Technical field
The present invention relates to a kind of method of removing gold coating on gallium aluminum arsenide material surface.
Background technology
Ga
(1-x)Al
xAs ternary mixed crystal semiconductor material is the important raw and processed materials of making ruddiness, infrared light photodiode, laser apparatus.In the process of making photodiode, laser chip, to be the unitized construction of Au layer at first, so that form the ohmic contact of metal and epitaxial material at material surface evaporation one deck major ingredient.The making of electrode is to adopt chemical reagent to remove selectively not need the zone to form.The reagent that is commonly used to remove material surface gold layer at present mainly contains two kinds:
A, basic metal salt compounded of iodine mix the composite solution that forms with iodine, as the mixing solutions of alkalization potassium, iodine
Reaction formula is as follows:
KI+I
2---KI
3+ KI (excessive) 1.
3KI
3+2Au——2KAuI
4+KI ②
B, potassium cyanide solution
Reaction formula is as follows:
4Au+8KCN+2H2O+O2——4Na[Au(CN)2]+4NaOH ③
But being suitable for, reagent A do not remove Ga
(1-x)Al
xAs ternary mixed crystal semiconductor material surface gold layer, because reagent A also has corrosive nature to material surface when removing material surface gold layer, and the X value is big more, and reagent A is obvious more to the corrosive nature of material, and the damage of material itself has a strong impact on chip outward appearance and use properties.Be commonly used to remove Ga at present
(1-x)Al
xThe chemical reagent of As ternary mixed crystal semiconductor material surface gold layer is reagent B.But prussiate has severe toxicity, and operating process and safeguard procedures must be very careful thorough, and the purchase of prussiate and offal treatment program are loaded down with trivial details, is unfavorable for that scale production and cost reduce.
Summary of the invention
The object of the present invention is to provide a kind of method of removing gold coating on gallium aluminum arsenide material surface, this method forms slight passive film at material surface when removing the gold layer, so that guaranteeing to replace existing prussiate severe toxicity prescription under the product quality premise.
The present invention is achieved in that and it is characterized in that adding the concentrated nitric acid of volume ratio at 20%-35% in potassiumiodide that contains iodine or ammonium iodide solution, mixes the surface gold layer that gallium aluminum arsenide ternary mixed crystal material is removed in the back.In led chip is produced,, protected the epitaxial wafer surface owing to after having added concentrated nitric acid, when removing the gold layer, form slight passive film at material surface.
Containing major ingredient in the mixed solution of the present invention is K
+, I
-, I
2, NO
2, I
3-, H
+, NO
3 -
Blended solution of the present invention contains H at least
+, NO
3 -, NO
2
Technique effect of the present invention is: implements easily, do not have severe toxicity, and stable and reliable for performance, can when removing the gold layer, form slight passive film at the gallium aluminum arsenide material surface, help protecting the damage of reagent to material surface.
Embodiment
Embodiment one:
At first get an emission wavelength and be about GaAlAs material epitaxy sheet about 640nm, the method by vacuum evaporation be golden metal at epitaxial wafer surface evaporation one deck major ingredient then.Epitaxial wafer is taken out from the vacuum evaporation platform, applies one deck photoresist layer at golden laminar surface, and utilize exposure, develop, oven dry is fixing etc., and technology forms specific graphics field in photoresist layer.After finishing above operation, install standby with quartzy anchor clamps above epitaxial wafer.
Remove ionized water 1000 gram, iodine 25 grams, potassiumiodide 100 grams and put into quartz curette, stir, placing back more than 15 minutes, to add mass ratio in solution be 300 milliliters of 70% left and right sides concentrated nitric acids, stirs and block evenly.
The GaAlAs epitaxial wafer that installs is soaked in the above solution, and slight jitter waits no photoresist layer protection zone gold layer to remove the back taking-up fully so that the corrosion of gold layer is even, washes away ionized water more than 15 minutes, removes the electrode region photoresist layer and gets final product.
Embodiment two:
At first get an emission wavelength and be about GaAlAs material epitaxy sheet about 940nm, the method by vacuum evaporation be golden metal at epitaxial wafer surface evaporation one deck major ingredient then.Epitaxial wafer is taken out from the vacuum evaporation platform, applies one deck photoresist layer at golden laminar surface, and utilize exposure, develop, oven dry is fixing etc., and technology forms specific graphics field in photoresist layer.After finishing above operation, install standby with quartzy anchor clamps above epitaxial wafer.
Remove ionized water 1000 gram, iodine 20 grams, ammonium iodide 120 grams and put into quartz curette, stir, place that the back adds 250 milliliters of mass ratio 70% left and right sides concentrated nitric acids more than 15 minutes in solution, stir and block evenly.
The GaAlAs epitaxial wafer that installs is soaked in the above solution, and slight jitter waits no photoresist layer protection zone gold layer to remove the back taking-up fully so that the corrosion of gold layer is even, washes away ionized water more than 15 minutes, removes the electrode region photoresist layer and gets final product.
Claims (3)
1, a kind of method of removing gold coating on gallium aluminum arsenide material surface is characterized in that adding the concentrated nitric acid of volume ratio at 20%-35% in potassiumiodide that contains iodine or ammonium iodide solution, mix the surface gold layer that gallium aluminum arsenide ternary mixed crystal material is removed in the back.
2, a kind of method of removing gold coating on gallium aluminum arsenide material surface according to claim 1 is characterized in that mixed solution major ingredient is K
+, I
-, I
2, NO
2, I
3-, H
+, NO
3 -
3, a kind of method of removing gold coating on gallium aluminum arsenide material surface according to claim 2 is characterized in that containing at least in the mixed solution H
+, NO
3 -, NO
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101366325A CN101445934B (en) | 2008-12-26 | 2008-12-26 | Method for removing gold coating on gallium aluminum arsenide material surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101366325A CN101445934B (en) | 2008-12-26 | 2008-12-26 | Method for removing gold coating on gallium aluminum arsenide material surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101445934A true CN101445934A (en) | 2009-06-03 |
| CN101445934B CN101445934B (en) | 2011-04-20 |
Family
ID=40741805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101366325A Expired - Fee Related CN101445934B (en) | 2008-12-26 | 2008-12-26 | Method for removing gold coating on gallium aluminum arsenide material surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101445934B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856429A (en) * | 2011-06-30 | 2013-01-02 | 法国红外探测器公司 | Method for manufacturing an electromagnetic radiation detector and detector obtained by such a method |
| CN103633195A (en) * | 2012-08-27 | 2014-03-12 | 鹤山丽得电子实业有限公司 | Method for processing excess-gold abnormity of LED chip |
| CN106098867A (en) * | 2016-07-06 | 2016-11-09 | 湘能华磊光电股份有限公司 | Improve LED chip to do over again the chip reworking method of efficiency |
| CN111146080A (en) * | 2020-01-03 | 2020-05-12 | 深圳市奥伦德元器件有限公司 | Method for reworking metal layer on surface of gallium-aluminum-arsenic epitaxial material |
| CN112234124A (en) * | 2020-10-30 | 2021-01-15 | 南昌凯迅光电有限公司 | Method for improving multi-gold abnormity of LED chip |
-
2008
- 2008-12-26 CN CN2008101366325A patent/CN101445934B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856429A (en) * | 2011-06-30 | 2013-01-02 | 法国红外探测器公司 | Method for manufacturing an electromagnetic radiation detector and detector obtained by such a method |
| CN102856429B (en) * | 2011-06-30 | 2016-12-07 | 法国红外探测器公司 | The method manufacturing electromagnetic radiation detector and the detector obtained by the method |
| CN103633195A (en) * | 2012-08-27 | 2014-03-12 | 鹤山丽得电子实业有限公司 | Method for processing excess-gold abnormity of LED chip |
| CN106098867A (en) * | 2016-07-06 | 2016-11-09 | 湘能华磊光电股份有限公司 | Improve LED chip to do over again the chip reworking method of efficiency |
| CN111146080A (en) * | 2020-01-03 | 2020-05-12 | 深圳市奥伦德元器件有限公司 | Method for reworking metal layer on surface of gallium-aluminum-arsenic epitaxial material |
| CN112234124A (en) * | 2020-10-30 | 2021-01-15 | 南昌凯迅光电有限公司 | Method for improving multi-gold abnormity of LED chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101445934B (en) | 2011-04-20 |
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Effective date of registration: 20161208 Address after: 330029 Nanchang province Qingshan Lake District hi tech Zone, Jingdong Avenue, No. 168 Patentee after: Jiangxi Lianchuang Optoelectronic Technology Co., Ltd. Address before: 330012 Jiangxi city of Nanchang province Luo Jia Zhen Jiangnan material factory Patentee before: Nantong Sunrise Optech Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110420 Termination date: 20171226 |