CN101436636B - 一种用于n型硅的透明导电阴极接触结构 - Google Patents
一种用于n型硅的透明导电阴极接触结构 Download PDFInfo
- Publication number
- CN101436636B CN101436636B CN2008102397585A CN200810239758A CN101436636B CN 101436636 B CN101436636 B CN 101436636B CN 2008102397585 A CN2008102397585 A CN 2008102397585A CN 200810239758 A CN200810239758 A CN 200810239758A CN 101436636 B CN101436636 B CN 101436636B
- Authority
- CN
- China
- Prior art keywords
- silicon
- type
- electrode
- lithium fluoride
- type silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008102397585A CN101436636B (zh) | 2008-12-16 | 2008-12-16 | 一种用于n型硅的透明导电阴极接触结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008102397585A CN101436636B (zh) | 2008-12-16 | 2008-12-16 | 一种用于n型硅的透明导电阴极接触结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101436636A CN101436636A (zh) | 2009-05-20 |
CN101436636B true CN101436636B (zh) | 2011-05-25 |
Family
ID=40710957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102397585A Expired - Fee Related CN101436636B (zh) | 2008-12-16 | 2008-12-16 | 一种用于n型硅的透明导电阴极接触结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101436636B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932080B (zh) * | 2016-05-12 | 2017-08-04 | 苏州协鑫集成科技工业应用研究院有限公司 | 异质结太阳能电池及其制备方法 |
CN107093644B (zh) * | 2017-04-21 | 2019-04-23 | 江苏天雄电气自动化有限公司 | 一种具有无功功率补偿***的光伏发电*** |
CN107393974A (zh) * | 2017-07-21 | 2017-11-24 | 协鑫集成科技股份有限公司 | 复合电极及其制备方法及异质结太阳能电池及其制备方法 |
CN109256431A (zh) * | 2018-08-09 | 2019-01-22 | 暨南大学 | 一种用于非掺杂异质n型单抛硅太阳电池的纳米双金属层背接触及其制备方法和应用 |
CN113035975A (zh) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | 一种玻璃粉及其制备方法、一种导电银浆及其制备方法和应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1642376A (zh) * | 2004-01-18 | 2005-07-20 | 北京大学 | 一种有机电致发光器件及其制备方法 |
WO2007102683A1 (en) * | 2006-03-06 | 2007-09-13 | Lg Chem, Ltd. | Novel anthracene derivative and organic electronic device using the same |
-
2008
- 2008-12-16 CN CN2008102397585A patent/CN101436636B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1642376A (zh) * | 2004-01-18 | 2005-07-20 | 北京大学 | 一种有机电致发光器件及其制备方法 |
WO2007102683A1 (en) * | 2006-03-06 | 2007-09-13 | Lg Chem, Ltd. | Novel anthracene derivative and organic electronic device using the same |
Also Published As
Publication number | Publication date |
---|---|
CN101436636A (zh) | 2009-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Aydin et al. | Sputtered transparent electrodes for optoelectronic devices: Induced damage and mitigation strategies | |
CN101436636B (zh) | 一种用于n型硅的透明导电阴极接触结构 | |
US20060202614A1 (en) | Organic electroluminescent devices and display device employing the same | |
CN103180970A (zh) | 用于薄膜太阳能电池的扩散阻挡层 | |
EP3018721A1 (en) | Substrate for photoelectric device and photoelectric device comprising same | |
US20120273039A1 (en) | Solar Cell Apparatus and Method for Manufacturing the Same | |
US10991841B2 (en) | Perovskite solar cell and tandem solar cell | |
JP2012532444A (ja) | 太陽電池及びその製造方法 | |
JP2012530378A (ja) | 太陽電池及びその製造方法 | |
CN102918652A (zh) | Cigs型太阳能电池和cigs型太阳能电池用基板 | |
US11205735B2 (en) | Low temperature p-i-n hybrid mesoporous optoelectronic device | |
Hsu et al. | Enhanced carrier collection in p-Ni1− xO: Li/n-Si heterojunction solar cells using LiF/Al electrodes | |
GB2558109A (en) | OLED luminescent device and display device | |
US20100258188A1 (en) | Thin Film Type Solar Cell and Method for Manufacturing the Same | |
CN102460717A (zh) | 太阳能电池及其制造方法 | |
CN204315587U (zh) | 基于GaN纳米线阵列的太阳能电池 | |
CN116347908B (zh) | 钙钛矿太阳电池及其制备方法、光伏组件 | |
KR101631970B1 (ko) | 박막 태양 전지의 제조방법 | |
US20120073645A1 (en) | Solar Cell Apparatus and Method of Manufacturing the Same | |
US9871159B2 (en) | Apparatus for generating electricity using solar power and method for manufacturing same | |
US9178084B2 (en) | Solar cell and method for manufacturing the same | |
CN213636039U (zh) | 一种顶发射oled阴极结构 | |
KR20110043358A (ko) | 태양전지 및 이의 제조방법 | |
CN111326659B (zh) | 一种金属透明电极及有机太阳能电池 | |
US20100139757A1 (en) | Photovoltaic cell structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GAOPING RONGGAO PV SOLAR DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: ELECTROTECHNICS INST., OF THE CHINESE ACADEMY OF SCIENCES Effective date: 20110914 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100080 HAIDIAN, BEIJING TO: 048407 JINCHENG, SHAANXI PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110914 Address after: 048407, Shanxi province Gaoping Ma Town Village health camp Patentee after: Gaoping Rong Gao solar energy development Co., Ltd. Address before: 100080 Beijing Haidian District Zhongguancun north two No. 6 Patentee before: Institute of Electrical Engineering of the Chinese Academy of Sciences |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110525 Termination date: 20171216 |
|
CF01 | Termination of patent right due to non-payment of annual fee |