CN101436636A - 一种用于n型硅的透明导电阴极接触结构 - Google Patents
一种用于n型硅的透明导电阴极接触结构 Download PDFInfo
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- CN101436636A CN101436636A CNA2008102397585A CN200810239758A CN101436636A CN 101436636 A CN101436636 A CN 101436636A CN A2008102397585 A CNA2008102397585 A CN A2008102397585A CN 200810239758 A CN200810239758 A CN 200810239758A CN 101436636 A CN101436636 A CN 101436636A
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CN2008102397585A CN101436636B (zh) | 2008-12-16 | 2008-12-16 | 一种用于n型硅的透明导电阴极接触结构 |
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CN2008102397585A CN101436636B (zh) | 2008-12-16 | 2008-12-16 | 一种用于n型硅的透明导电阴极接触结构 |
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CN101436636A true CN101436636A (zh) | 2009-05-20 |
CN101436636B CN101436636B (zh) | 2011-05-25 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932080A (zh) * | 2016-05-12 | 2016-09-07 | 苏州协鑫集成科技工业应用研究院有限公司 | 异质结太阳能电池及其制备方法 |
CN107093644A (zh) * | 2017-04-21 | 2017-08-25 | 江苏天雄电气自动化有限公司 | 一种具有无功功率补偿***的光伏发电*** |
CN107393974A (zh) * | 2017-07-21 | 2017-11-24 | 协鑫集成科技股份有限公司 | 复合电极及其制备方法及异质结太阳能电池及其制备方法 |
CN109256431A (zh) * | 2018-08-09 | 2019-01-22 | 暨南大学 | 一种用于非掺杂异质n型单抛硅太阳电池的纳米双金属层背接触及其制备方法和应用 |
CN113035975A (zh) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | 一种玻璃粉及其制备方法、一种导电银浆及其制备方法和应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1642376A (zh) * | 2004-01-18 | 2005-07-20 | 北京大学 | 一种有机电致发光器件及其制备方法 |
TWI348463B (en) * | 2006-03-06 | 2011-09-11 | Lg Chemical Ltd | Novel anthracene derivative and organic electronic device using the same |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932080A (zh) * | 2016-05-12 | 2016-09-07 | 苏州协鑫集成科技工业应用研究院有限公司 | 异质结太阳能电池及其制备方法 |
CN107093644A (zh) * | 2017-04-21 | 2017-08-25 | 江苏天雄电气自动化有限公司 | 一种具有无功功率补偿***的光伏发电*** |
CN107393974A (zh) * | 2017-07-21 | 2017-11-24 | 协鑫集成科技股份有限公司 | 复合电极及其制备方法及异质结太阳能电池及其制备方法 |
CN109256431A (zh) * | 2018-08-09 | 2019-01-22 | 暨南大学 | 一种用于非掺杂异质n型单抛硅太阳电池的纳米双金属层背接触及其制备方法和应用 |
CN113035975A (zh) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | 一种玻璃粉及其制备方法、一种导电银浆及其制备方法和应用 |
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CN101436636B (zh) | 2011-05-25 |
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Owner name: GAOPING RONGGAO PV SOLAR DEVELOPMENT CO., LTD. Free format text: FORMER OWNER: ELECTROTECHNICS INST., OF THE CHINESE ACADEMY OF SCIENCES Effective date: 20110914 |
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Effective date of registration: 20110914 Address after: 048407, Shanxi province Gaoping Ma Town Village health camp Patentee after: Gaoping Rong Gao solar energy development Co., Ltd. Address before: 100080 Beijing Haidian District Zhongguancun north two No. 6 Patentee before: Institute of Electrical Engineering of the Chinese Academy of Sciences |
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Granted publication date: 20110525 Termination date: 20171216 |