CN101436543A - Method for preparing single electron device - Google Patents
Method for preparing single electron device Download PDFInfo
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- CN101436543A CN101436543A CNA2008102398840A CN200810239884A CN101436543A CN 101436543 A CN101436543 A CN 101436543A CN A2008102398840 A CNA2008102398840 A CN A2008102398840A CN 200810239884 A CN200810239884 A CN 200810239884A CN 101436543 A CN101436543 A CN 101436543A
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Abstract
The invention relates to a method for preparing a single electronic device in the technical field of nano-device manufacture. In order to overcome the defect that preparation technique for the prior single electronic device excessively depends on electron beam lithography to increase difficulty of the electron beam lithography. The invention aims to provide a method for preparing the single electronic device, which comprises the following steps: using electron beam lithography technique to manufacture an electrode pattern, preparing a thin silicon layer through an electron beam evaporation means, and then manufacturing a thin layer of silicon on the surface through quick annealing technique into a silicon quantum pot. The method has simple steps, and can be compatible with the prior microelectronic process. The single electronic device prepared by the method has large consistency, and has the advantage of low operation voltage and little power consumption.
Description
Technical field
The present invention relates to the nano-device manufacture technology field, be specifically related to a kind of preparation method of single-electron device.
Background technology
Since over half a century, be that the semiconductor integrated circuit of mainstream technology is being followed " Moore's Law " always and developed rapidly with CMOS, its characteristic size has entered into nanoscale, but also be faced with simultaneously more and more serious challenge, therefore become the focus of research based on the nano electron device of new material, new principle such as various quantum dot device, nano wire, nanometer tube device, single-electron device etc.In the making of these nano electron devices, manufactured size making little, that be evenly distributed, have the quantum dot of nanometer scale is a key.
Traditional method for preparing single-electron device is mainly direct etching method, promptly directly on the SOI top layer silicon, pass through dry method or wet etching, produce electrode pattern and quantum dot, but the shortcoming of the method is very to rely on electron beam lithography, not only need electron beam lithography to go out the very near electrode pattern of distance, also need to produce quantum dot, and this has just more increased the difficulty of electron beam lithography.
Summary of the invention
Too rely on electron beam lithography in order to solve in the existing single-electron device technology of preparing, increased the shortcoming of electron beam lithography difficulty, the object of the present invention is to provide a kind of preparation method of single-electron device, its preparation process is simple, can with traditional microelectronic technique compatibility.
In order to achieve the above object, the technical solution used in the present invention is: a kind of preparation method of single-electron device, and its preparation process is as follows:
(1) cleans the SOI substrate;
(2) on the SOI substrate, make the glue pattern of source, leakage, gate electrode by electron beam exposure;
(3) by dry etching or wet etching glue pattern is transferred on the SOI top layer silicon;
(4) by electron beam evaporation equipment evaporation skim silicon;
(5) prepare silicon quantum dot by the rapid thermal annealing method.
Top layer silicon thickness is 50 ± 1nm in the SOI substrate in the above-mentioned steps (1), and the buried regions oxidated layer thickness is 375 ± 10nm, top layer silicon resistivity＜0.01 Ω cm.
Used electron beam resist is negative glue HSQ or positive glue Zep520 in the above-mentioned steps (2).
Dry etching is for using SF in the above-mentioned steps (3)
2And CHF
3Mist carry out plasma etching; The used corrosive liquid of wet etching is HNO
3, NH
4F, H
2The mixture of O.
Etching depth is 50-60nm in the above-mentioned steps (3), and etching depth is controlled by etch period.
The thickness of thin-layer silicon is 10 ± 1nm in the above-mentioned steps (4).
The size of silicon quantum dot grains is 10～20nm in the above-mentioned steps (5).
Compared with prior art, the beneficial effect of technical solution of the present invention generation is as follows:
The present invention adopts electron beam lithography to make electrode pattern, adopts rapid thermal annealing fabrication techniques quantum dot, have processing step few, simple, can with the advantage of traditional microelectronic technique compatibility.The quantum dot of making by rapid thermal annealing method among the present invention has the size advantage of uniform, thereby makes the single-electron device of made have very big consistency, and characteristics such as it is low to have an operating voltage, and power consumption is little.
Description of drawings
Fig. 1～Fig. 5 is a process chart of the present invention;
Fig. 6 is the schematic diagram of the single-electron device of the present invention's preparation;
Fig. 7 is the stereoscan photograph of quantum dot among the present invention.
Reference numeral:
The 1-SOI substrate, 2-top layer silicon, 3-buried regions oxide layer, 4-glue pattern, 5-thin-layer silicon, 6-quantum dot.
Embodiment
Below in conjunction with the drawings and specific embodiments technical scheme of the present invention is elaborated.
The present invention is a kind of preparation method of single-electron device, and concrete processing step is as follows:
(1) adopt the p type,＜2 cun SOI of 100〉crystal orientation do substrate, this substrate top layer silicon 2 thick 50nm, buried regions oxide layer 3 thick 375nm, the thick 5000nm of body silicon layer.Top layer silicon 2 resistivity＜0.01 Ω cm; SOI substrate 1 was successively used acetone, alcohol, deionized water respectively ultrasonic 5 minutes, this moment SOI substrate 1 structure as shown in Figure 1;
(2) spin coating Zep520 photoresist on SOI substrate 1 after electron beam lithography exposure, develops, photographic fixing, and dries up with high pure nitrogen, obtains the glue pattern 4 of source, leakage, gate electrode, and shape is as shown in Figure 2 on SOI substrate 1 for electrode pattern;
(3) with wet etching glue pattern 4 is transferred on the top layer silicon 2, wet etching liquid adopts HNO
3, H
2O and NH
4The hybrid corrosion liquid of F, etching depth is 50nm-60nm, and etching depth is controlled by etch period, removes the Zep520 photoresist with butanone after corrosion finishes, and the structure after glue pattern 4 is transferred to above the top layer silicon 2 is as shown in Figure 3;
(4) the deposited by electron beam evaporation technology is corroding on the later substrate evaporation skim silicon 5, and thickness is 10nm, this moment device structure as shown in Figure 4;
(5) with the rapid thermal annealing technology thin-layer silicon 5 on surface is made into densification, silicon quantum dot 6 uniformly, the single-electron device structure after preparation is finished as shown in Figure 5, through characterizing, lateral size of dots is about 15nm.
As shown in Figure 6, Fig. 6 is for preparing the single-electron device plan structure schematic diagram after finishing.As can be seen from Figure 6, the single-electron device that the present invention prepares, its used coulomb island is the quantum dot for preparing by rapid thermal annealing separately, its diameter is about 15nm.Its preparation method is easy, is a new method; The diameter of its quantum dot is the minimum diameter of the silicon quantum dot of existing reported in literature.
As shown in Figure 7, Fig. 7 is the figure of the viewed quantum dot of scanning electron microscopy.By this ESEM figure we as can be seen, the quantum dot uniform particles is arranged fine and closely, can satisfy the requirement of preparation single-electron device fully
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1, a kind of preparation method of single-electron device is characterized in that, this method comprises the steps:
(1) cleans the SOI substrate;
(2) on the SOI substrate, make the glue pattern of source, leakage, gate electrode by electron beam exposure;
(3) glue pattern is transferred on the top layer silicon of SOI substrate by dry etching or wet etching;
(4) by electron beam evaporation equipment evaporation skim silicon;
(5) prepare silicon quantum dot by the rapid thermal annealing method.
2, the preparation method of single-electron device according to claim 1 is characterized in that: top layer silicon thickness is 50 ± 1nm in the SOI substrate in the described step (1), and the buried regions oxidated layer thickness is 375 ± 10nm, top layer silicon resistivity＜0.01 Ω cm.
3, the preparation method of single-electron device according to claim 1 is characterized in that: used electron beam resist is negative glue HSQ or positive glue Zep520 in the described step (2).
4, the preparation method of single-electron device according to claim 1 is characterized in that: dry etching is for using SF in the described step (3)
2And CHF
3Mist carry out plasma etching; The used corrosive liquid of wet etching is HNO
3, NH
4F, H
2The mixture of O.
5, the preparation method of single-electron device according to claim 1 is characterized in that: etching depth is 50-60nm in the described step (3).Etching depth is controlled by etch period.
6, the preparation method of single-electron device according to claim 1 is characterized in that: the thickness of thin-layer silicon is 10 ± 1nm in the described step (4).
7, the preparation method of single-electron device according to claim 1 is characterized in that: the size of silicon quantum dot grains is 10～20nm in the described step (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102398840A CN101436543A (en) | 2008-12-19 | 2008-12-19 | Method for preparing single electron device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102398840A CN101436543A (en) | 2008-12-19 | 2008-12-19 | Method for preparing single electron device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101436543A true CN101436543A (en) | 2009-05-20 |
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|---|---|---|---|
| CNA2008102398840A Pending CN101436543A (en) | 2008-12-19 | 2008-12-19 | Method for preparing single electron device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515191A (en) * | 2012-06-20 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
-
2008
- 2008-12-19 CN CNA2008102398840A patent/CN101436543A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515191A (en) * | 2012-06-20 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN103515191B (en) * | 2012-06-20 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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Open date: 20090520 |