CN101430923A - Solid-state semiconductor storage device and application system and control assembly thereof - Google Patents
Solid-state semiconductor storage device and application system and control assembly thereof Download PDFInfo
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Abstract
The invention discloses a solid-state semiconductor storage device with a temperature control function, and an application system and a control assembly thereof. The temperature sensing assembly is used for sensing the operating temperature of the solid-state semiconductor storage device so as to provide a temperature sensing signal to the control unit, and the control unit judges the operating temperature of the solid-state semiconductor storage device according to the temperature sensing signal value and executes a corresponding program, thereby achieving the purpose of temperature control.
Description
Technical field
The present invention relates to a kind of solid state semiconductor memory mechanism of nonvolatile memory, particularly relate to a kind of solid state semiconductor memory mechanism and control method thereof with temperature control function.
Background technology
Along with solid state semiconductor memory mechanism is day by day popularized, produces many application that utilize solid-state, non-volatile memory to write down storage of digital information, for example the carry-on dish of USB, storage card and solid magnetic disc driver (Solid-State Disk drive, SSD) etc.Wherein be suitable for most portable computer (as notebook, super mobile computer (Ultra-mobile PC with the solid magnetic disc driver of capacity maximum again, UMPC) etc.), so as to replacing Winchester disk drive and characteristics such as low power consumption, high storage speed, high-reliability being provided.For higher storage volume and access speed is provided, solid state semiconductor memory mechanism inside need be provided with several nonvolatile memories, and can carry out data read, record or erase operation simultaneously, so as to reducing the complete operation required time, reach the purpose that improves access speed.
Please refer to Fig. 1, be known solid magnetic disc driver functions calcspar, solid magnetic disc driver 1 comprises Power Management Unit 11, Nonvolatile memery unit 12 and control module 13.Power Management Unit 11 self-application system (not shown) are accepted the power supply of its supply, transfer the form of power that other unit of solid magnetic disc internal drive is suitable for to.Control module 13 system interfaces 131 connect application systems receiving instruction, and control Nonvolatile memery unit 12 carries out, and data input, data output, memory page write, memory block is wiped and other necessary operation.Utilize system interface 131 to connect application system in the control module 13, memory interface 132 connects Nonvolatile memery unit 12, is carried out flow processs such as application system instruction, control data transmission and Nonvolatile memery unit 12, is kept in functions such as transmitting data with transmission data buffer 134 by microprocessor 133.Nonvolatile memery unit 12 then is made up of at least one or above nonvolatile memory, and it accepts the steering order that control module 13 is assigned, and writes down and provide the application system numerical information that transmission stores.
Announce US6725321 number " Memory system ", United States Patent (USP) for another United States Patent (USP) and announce US6718406 number " Memory array apparatus with reduced data accessing timeand method for the same " and No. 20050010717 patents such as " Access anddata management method using double parallel tracks for flash memorycells " of U.S. Patent Publication, the system architecture and the method for relevant solid magnetic disc driver also is provided.But, owing to have multinomial electronic package to move simultaneously in the solid magnetic disc driver, make the solid magnetic disc driver produce unnecessary heat energy, in the portable computer that heat radiation is difficult at portable computer, cause temperature to rise easily, and then at high temperature produce the phenomenon of fluctuation of service.
And the known problem that causes the device fluctuation of service at temperature variation, as shown in Figure 2, be the storage system functionality calcspar of known tool attemperating unit, accumulator system 300 comprises a controller 310 and a storage arrangement 320, and controller 310 comes read-write memory device 320 by bus 330.Comprise in the controller 310 that one follows the trail of a circuit 316 and a control circuit 315, be used for running at a specific period monitoring memory device 320 and follow the trail of circuit 316, wherein the running of storage arrangement 320 comprises the number of times read and write or the number of times of renewal etc.; And control circuit 315 data that 320 runnings are provided according to tracking circuit 316 monitoring storage arrangements and the empirical datas of storage arrangement 320 previous runnings are judged in the special time operating temperature that storage arrangement 320 is produced in the cycle, and then if control circuit 315 is judged the operating temperature of storage arrangement 3320 above permissible range, the operation room that facility is used to read and write adds time delay, or storage arrangement 320 being switched on mode such as low-power mode regulates storage arrangement 320, to reduce the operating temperature of storage arrangement 320.
But above-mentioned correlation technique is applicable to volatile random access memory, and its distribute heat could use when only relevant with the read or write speed of Memory Controller access memory.And the Storage Media that the solid magnetic disc internal drive is adopted is nonvolatile memory (a for example NAND type Flash storer), preserve data for a long time as high capacity and use, the volatile memory that its accessing operation mode and characteristic and aforementioned techniques are suitable for has multinomial difference.The NADA type Flash storer that mainly adopts with present solid magnetic disc driver is an example, and itself and volatile random access memory difference comprise:
1.NADA the data of type Flash storer can't random access, it needs flow process by order code and appointment so that the memory page or the memory block of unit be carried out accessing operation greatly;
Do out of tradely 2.NADA type Flash storer removes data output/input as volatile random access memory, other need carry out that memory page writes or the memory block erase operation for use just can be finished the operation of record data;
3. aspect power consumption, memory page writes or the memory block erase operation needs the long time because NADA type Flash storer is carried out, and to carry out the output/input of data merely higher so carry out power ratio that this operation consumes, and the heat that distributes is also higher.
By above-mentioned 3 differences as can be known, NADA type Flash storer has different characteristics respectively with volatile random access memory, so aforementioned correlation technique at memory temperature control can not be applicable to solid magnetic disc driver or other solid state semiconductor memory mechanism.General solid state semiconductor memory mechanism is because the problem of fluctuation of service that temperature causes still lacks preferable solution so far and improves.
Summary of the invention
The object of the present invention is to provide a kind of solid state semiconductor memory mechanism and application system and Control Component with temperature control function, avoid the phenomenon of solid state semiconductor memory mechanism generation fluctuation of service under high temperature, to reach the purpose of continual and steady operation.
To achieve these goals, the invention provides a kind of solid state semiconductor memory mechanism with temperature control function, it comprises a Nonvolatile memery unit, a temperature sensing component and a control module.Wherein Nonvolatile memery unit is used for storage of digital information.Temperature sensing component is used for the operating temperature of this solid state semiconductor memory mechanism of sensing, so that a temperature sensing signal to be provided.Control module utilizes a system interface and an application system to electrically connect, to receive the instruction that this application system is assigned; Utilize a memory interface and this Nonvolatile memery unit to electrically connect; Utilize a temperature sensing interface and this temperature sensing component to electrically connect, to receive this temperature sensing signal.And control module also comprises a microprocessor, it electrically connects this system interface, this memory interface and this temperature sensing interface, this microprocessor is judged the operating temperature of this solid-state disc player according to this temperature sensing signal, and carries out the operator scheme that corresponding program is adjusted this solid-state disc player.
To achieve these goals, the present invention also provides a kind of temperature-controlled process of solid state semiconductor memory mechanism, and its step is at first preset a temperature threshold value according to the different operating temperature in a control module; Detect the operating temperature of this solid state semiconductor memory mechanism and send a temperature sensing signal by a temperature sensing component then and return this control module; Follow this control module relatively this temperature sensing signal value and this temperature threshold value, and, control the operating state of this solid state semiconductor memory mechanism according to comparative result.
So the present invention utilizes the comparison of the operating temperature sensing signal value of temperature threshold value and solid state semiconductor memory mechanism, can allow control module enter different operator schemes, and its control module of different operator schemes has corresponding instruction execution speed and to the access speed of Nonvolatile memery unit, reach temperature controlled effect whereby.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is known solid magnetic disc driver functions calcspar;
Fig. 2 is the storage system functionality calcspar of known tool attemperating unit;
Fig. 3 is the solid state semiconductor memory mechanism functional block diagram of tool temperature control function of the present invention;
Fig. 4 sets table for the solid state semiconductor memory mechanism of preferred embodiment of the present invention with the situation of operating temperature sensing signal value switching operation modes;
Fig. 5 for the solid state semiconductor memory mechanism temperature sensing signal value of preferred embodiment of the present invention and operator scheme in time with the variation synoptic diagram of different hypothesis situations;
Fig. 6 has the functional block diagram of another preferred embodiment of the solid state semiconductor memory mechanism of temperature control function for the present invention; And
Fig. 7 is the temperature-controlled process process flow diagram of solid state semiconductor memory mechanism of the present invention; And
Fig. 8 is the temperature-controlled process process flow diagram of the solid state semiconductor memory mechanism of preferred embodiment of the present invention.
Wherein, Reference numeral:
Solid magnetic disc driver 1
Power Management Unit 11
Nonvolatile memery unit 12
Microprocessor 133
Follow the trail of circuit 316
Solid state semiconductor memory mechanism 4,7
Power Management Unit 41
Nonvolatile memery unit 42
Temperature-controlling module 71
The first temperature threshold value T1
The second temperature threshold value T2
The 3rd temperature threshold value T3
The first operator scheme M1
The second operator scheme M2
The 3rd operator scheme M3
The 4th operator scheme M4
Embodiment
Please refer to Fig. 3, be the solid state semiconductor memory mechanism functional block diagram of tool temperature control function of the present invention.As shown in the figure, the solid state semiconductor memory mechanism 4 of tool temperature control function comprises Power Management Unit 41, Nonvolatile memery unit 42, control module 43, reaches temperature sensing component 44.Power Management Unit 41 is accepted from the power supply of motherboard or application system 45 (as: computing machine, individual digital mobile device or various digita multimedia device) supply, transfers the form of power that solid state semiconductor memory mechanism 4 inner each unit are suitable for to.Control module 43 connects application systems 45 receiving instruction through system interface 431, and Nonvolatile memery unit 42 is carried out data input, data output, memory page write, memory block is erased and other necessary operation.Utilize system interface 431 to connect application system 45 in the control module 43, connect Nonvolatile memery unit 42 by memory interface 432.Control module 43 further also comprises a microprocessor 433, instruction, control data transmission that the execution application system 45 of being responsible for this microprocessor 433 is transmitted reach the data access to Nonvolatile memery unit 12, with the temporary transmit data functionality of control data transmission buffer zone 434.Nonvolatile memery unit 42 then is made up of at least more than one nonvolatile memory, it accepts the steering order that control module 43 is assigned, be used to write down or provide application system 45 required numerical information, and the control relevant information that stores control module 43 parts.
From the above mentioned, solid state semiconductor memory mechanism 4 can further default in temperature threshold value in control module 43, Nonvolatile memery unit 42 or the temperature sensing component 44, and temperature sensing component 44 can be further combined with a comparator circuit to temperature sensing signal and the preset temperature critical value compares and comparative result is transferred to control module 43; In addition, temperature threshold value also can be set or adjust except can fixedly defaulting in said units or the assembly by application system 45; Solid state semiconductor memory mechanism 4 also can be further with regard to its operating characteristic, preestablish a plurality of temperature threshold value and corresponding operator scheme, and reach under the situation of different temperatures critical value in operating temperature sensing signal value, allow this device enter different operator schemes think in response to.Be that example is done explanation then with the operator scheme that preestablishes three temperature threshold value, four kinds of correspondences.
Please refer to Fig. 4, for the solid state semiconductor memory mechanism of preferred embodiment of the present invention is shown with the situation setting of switching operation modes as a result of different operating temperature sensing, and Fig. 5, for the solid state semiconductor memory mechanism temperature sensing signal value of preferred embodiment of the present invention and operator scheme in time with the variation synoptic diagram of different hypothesis situations.
When the operating temperature sensing signal value of solid state semiconductor memory mechanism 4 is lower than the first temperature threshold value T1, solid state semiconductor memory mechanism 4 enters the first operator scheme M1, normal manipulation mode just, this moment, control module 43 was carried out the instruction that application system 45 is assigned at full speed, and access Nonvolatile memery unit 42 at full speed.When the first operator scheme M1, solid state semiconductor memory mechanism 4 provides best access usefulness, but the heat of power that consumes and generation is also the highest.
When the operating temperature sensing signal value of being sent when the sensing component 44 of solid state semiconductor memory mechanism 4 was higher than the first temperature threshold value T1, then this storage device entered the second operator scheme M2, and just low cooling pattern is shown in the S1 of Fig. 5.At this moment, control module 43 enters the running of slowing down, and just carrying out application system 45, to assign the speed of instruction lower, but still access Nonvolatile memery unit 42 at full speed.When the second operator scheme M2, the access usefulness of solid state semiconductor memory mechanism 4 and the power of consumption all are lower than and operate in the first operator scheme M1, with under the unlikely situation that significantly influences data access usefulness, reach low cool effect.If application system 45 is not carried out the operation of mass data access continuously to solid state semiconductor memory mechanism 4, then generally speaking, its built-in function temperature will descend gradually to returning and be lower than the pairing temperature of the first temperature threshold value T1, control module 43 is with being about to operator scheme switchback first operator scheme, so that best data access usefulness to be provided, shown in the S1 to S2 of Fig. 5.
Then if application system 45 continues solid state semiconductor memory mechanism 4 is carried out the mass data accessing operation continuously, or the ambient temperature of device solid state semiconductor memory mechanism 4 is higher, or radiating condition is not when good, lowers the heat that running produces and still possibly can't reach the purpose that reduces temperature even enter the second operator scheme M2.At this moment, the rising that temperature continues is shown in the S3 to S4 of Fig. 5.When built-in function temperature sensing signal value surpasses the second temperature threshold value T2, solid state semiconductor memory mechanism 4 promptly enters the 3rd operator scheme M3, the pattern of height cooling just, further reduce the execution speed of control module 43, and lower the access speed of access Nonvolatile memery unit 42 simultaneously, to reach under harsh environment, the purpose of continual and steady operation is shown in the S4 of Fig. 5.
And the access speed of above-mentioned attenuating access Nonvolatile memery unit 42 can comprise transfer rate, the write operation of the parallel or staggered execution memory page of minimizing, the parallel or staggered executive storage area piece erase operation of minimizing, the time interval that reduces the write operation of execution memory page, minimizing executive storage area piece erase operation, the write operation of increasing execution memory page of lowering data and exporting or importing, the modes of operation such as the time interval that strengthen executive storage area piece erase operation.
If the environment of device solid state semiconductor memory mechanism 4 may have other thermal source and the bad cause of dispelling the heat because of context, even may cause after the 3rd operator scheme M3 highly lowers the temperature, its built-in function temperature can continue the situation of rising.Shown in the S4 to S5 of Fig. 5, even solid state semiconductor memory mechanism 4 enters the 3rd operator scheme M3, still only can slow down the trend that temperature rises, still fail to check fully the phenomenon that operating temperature rises.At this moment, operating temperature promptly continues to rise and can keep the allowable value of stable running up to surpassing solid state semiconductor memory mechanism 4, and operating temperature sensing signal value reaches the 3rd temperature threshold value T3 simultaneously, shown in the S5 of Fig. 5.Operating temperature already exceeds the upper limit that solid state semiconductor memory mechanism 4 can be kept stable running, and control module 43 promptly enters the 4th operator scheme M4, to respond the state of overheated mistake.At this moment, the instruction of assigning for application system 45, control module 43 all responds error message, and stop access Nonvolatile memery unit 42, be back to up to the built-in function temperature and be lower than the pairing temperature of the 3rd temperature threshold value T3, control module 43 returns till the 3rd operator scheme M3, shown in the S6 of Fig. 5 again.
By above-mentioned explanation as can be known, the solid state semiconductor memory mechanism that the present invention has a temperature control function changes the execution speed of control module 43 according to the operating temperature sensing result of solid state semiconductor memory mechanism and to the access speed of nonvolatile memory unit 442, the heat that distributes with effective reduction, and then reach the purpose of continual and steady operation.
Please refer to Fig. 6, have the functional block diagram of another preferred embodiment of temperature controlled solid state semiconductor memory mechanism for the present invention.As shown in the figure, in solid state semiconductor memory mechanism 7 except that temperature sensing component 44 is set, set up a temperature-controlling module 71 again, when temperature sensing component 44 sensing internal temperatures surpass the pairing temperature of a default value, control module 43 also can start this temperature-controlling module 71 to improve radiating efficiency and to accelerate the speed that temperature reduces except that changing execution speed and the access speed to nonvolatile memory unit 442.Wherein, temperature-controlling module 71 can be power-actuated fan or solid-state cooling device.
In addition, the present invention also can carry out the built-in function temperature that an application program 451 is monitored storage device 7 on the application system 45 that solid state semiconductor memory mechanism 7 is connected, when built-in function temperature sensing signal value surpasses a default value, be fed back to application program 451 by control module 43 through system interface 431 transmission one signal, produce the user of information notice application system 45 or another temperature-controlling module in the start-up system by application program 451 again.
Then please refer to Fig. 7, be the temperature-controlled process process flow diagram of solid state semiconductor memory mechanism of the present invention.At first in solid state semiconductor memory mechanism, preestablish at least one temperature threshold value (as figure step S801), utilize the operating temperature of temperature sensing component sensing solid state semiconductor memory mechanism then, then compare the operating temperature sensing signal value and default temperature threshold value (as figure step S803) of solid state semiconductor memory mechanism by control module.If the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses temperature threshold value, then the control module of solid state semiconductor memory mechanism reduces execution speed and to the access speed (as figure step S805) of Nonvolatile memery unit.And wherein, the execution speed of control module and can comprise the control mode of the access speed of Nonvolatile memery unit, control module lower the speed of carrying out the instruction that application system assigns and control module, and access Nonvolatile memery unit, control module are carried out commanded response error message and the control module that instruction that application system assigned and the speed that lowers the access Nonvolatile memery unit or control module assigned the application system with low speed and are stopped the access Nonvolatile memery unit at full speed.
Hold above-mentioned, if when the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses temperature threshold value, can further start the temperature-controlling module (as figure step S807) in the solid state semiconductor memory mechanism.And can on the application system that solid state semiconductor memory mechanism connected, carry out an application program, with the information of reception solid state semiconductor memory mechanism operating temperature sense conditions, and the user of notice application system or the reply handling procedure of start-up system.
Next please refer to Fig. 8, be the temperature-controlled process process flow diagram of the solid state semiconductor memory mechanism of preferred embodiment of the present invention.At first in the control module of solid state semiconductor memory mechanism, set one first temperature threshold value, one second temperature threshold value, reach one the 3rd temperature threshold value, whereby the operator scheme of this control module is divided into first operator scheme, second operator scheme, the 3rd operator scheme and the 4th operator scheme.And wherein first operator scheme is that control module is carried out instruction and the full speed access Nonvolatile memery unit that application system is assigned at full speed, second operator scheme is that control module lower to be carried out the speed of the instruction that application system assigns and access Nonvolatile memery unit at full speed, the 3rd operator scheme be control module with low speed carry out the instruction that application system assigned and the speed that lowers the access Nonvolatile memery unit and the 4th operator scheme to be the instruction that control module is assigned the application system all respond error message and stop the access Nonvolatile memery unit.
After solid state semiconductor memory mechanism starts, the convenient operating temperature that detects this storage device with a temperature sensing component, then the control module in this device relatively the operating temperature sensing signal value of this storage device whether surpass first temperature threshold value (as figure step S905), if do not surpass first temperature threshold value, then control module enters first operator scheme (as figure step S907) and continues to detect and action relatively.
And if the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses first temperature threshold value, then control module enters second operator scheme (as figure step S909), and whether the operating temperature sensing signal value that continues detection and comparison solid state semiconductor memory mechanism then is lower than first temperature threshold value (as figure step S911).If the operating temperature sensing signal value of solid state semiconductor memory mechanism is lower than first temperature threshold value, then be back to step S907, and if the operating temperature sensing signal value of solid state semiconductor memory mechanism is not lower than first temperature threshold value, then relatively whether the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses second temperature threshold value (as figure step S913).
If the operating temperature sensing signal value of solid state semiconductor memory mechanism does not surpass second temperature threshold value, then return step S909, and if the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses second temperature threshold value, then control module enters the 3rd operator scheme (as figure step S915).Whether the operating temperature sensing signal value that continues detection and comparison solid state semiconductor memory mechanism then is lower than second temperature threshold value (as figure step S917), if the operating temperature sensing signal value of solid state semiconductor memory mechanism is lower than second temperature threshold value, then return step S909.And if the operating temperature sensing signal value of solid state semiconductor memory mechanism is not lower than second temperature threshold value, then relatively whether the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses the 3rd temperature threshold value (as figure step S919).If the operating temperature sensing signal value of solid state semiconductor memory mechanism does not surpass the 3rd temperature threshold value, then return step S915.And if the operating temperature sensing signal value of solid state semiconductor memory mechanism surpasses the 3rd temperature threshold value, then control module enters the 4th operator scheme (as figure step S921).Follow the operating temperature sensing signal value that continues detection and compare solid state semiconductor memory mechanism and whether be lower than the 3rd temperature threshold value (as figure step S923), if the operating temperature sensing signal value of solid state semiconductor memory mechanism is not lower than the 3rd temperature threshold value, then return step S921, if the operating temperature sensing signal value of solid state semiconductor memory mechanism is lower than the 3rd temperature threshold value, then return step S915.
In sum, for avoiding solid state semiconductor memory mechanism to produce the phenomenon of fluctuation of service down in high temperature, the invention provides the solid state semiconductor memory mechanism and the control method thereof of an effective tool temperature control function, make the solid state semiconductor memory mechanism operator scheme suitable according to different operating temperature adjustment, reduce the heat that distributes to carry out relevant temperature control mechanism, reach the purpose of continual and steady operation.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (10)
1, a kind of application system is characterized in that, includes the solid state semiconductor memory mechanism of tool temperature control function, and this storage device further comprises:
One Nonvolatile memery unit is used for storage of digital information;
One temperature sensing component is used for the operating temperature of this solid state semiconductor memory mechanism of sensing, and produces the signal of a correspondence; And
One control module is electrically connected at this temperature sensing component and this Nonvolatile memery unit respectively, and receives this respective signal that this temperature sensing component produces.
2, application system according to claim 1, it is characterized in that, described solid state semiconductor memory mechanism is preset with at least one temperature threshold value, and this included temperature sensing component of this solid state semiconductor memory mechanism is an electric thermo-couple temperature inductor, and this solid state semiconductor memory mechanism also comprises a temperature-controlling module, be electrically connected at this control module, in order to reduce the temperature of this storage device.
3, application system according to claim 2 is characterized in that, the temperature-controlled process of described solid state semiconductor memory mechanism comprises:
Detect the operating temperature of this storage device;
Produce a temperature sensing signal;
Relatively this temperature sensing signal value and this temperature threshold value; And
Carry out corresponding program according to this temperature sensing signal value with the comparative result of this temperature threshold value.
4, application system according to claim 3 is characterized in that, the corresponding program in the described temperature-controlled process comprises by this control module and starts this temperature-controlling module.
5, application system according to claim 3, it is characterized in that, corresponding program in the described temperature-controlled process comprises that this control module adjustment carries out the speed of the instruction that this application system assigns this storage device, or this control module adjustment is used at full speed, low at full speed speed or stop this Nonvolatile memery unit of access, wherein when this control module is used low at full speed this Nonvolatile memery unit of speed access, utilize the transfer rate that lowers data output or import, reduce the write operation of parallel or staggered execution memory page, reduce parallel or staggered executive storage area piece erase operation, reduce and carry out the memory page write operation, reduce executive storage area piece erase operation, strengthen the time interval of carrying out the memory page write operation, and one of them the kind mode that strengthens the time interval of executive storage area piece erase operation is reached.
6, application system according to claim 1 is characterized in that, described application system also comprises an application program, is used to receive signal that this solid state semiconductor memory mechanism sends and the monitoring temperature information that produces this storage device.
7, a kind of solid state semiconductor memory mechanism that is preset with the tool nonvolatile memory of at least one temperature threshold value is characterized in that, comprising:
One control module, this control module is electrically connected at this nonvolatile memory; And a temperature sensing component is electrically connected at control module, and this temperature sensing component is in order to detecting the operating temperature of this storage device, and sends a temperature sensing signal.
8, solid state semiconductor memory mechanism according to claim 7 is characterized in that, described control module receives this temperature sensing signal so that this sensing signal value and this preset temperature critical value are compared, and carries out corresponding program according to comparative result.
9, a kind of Control Component that is used for controlling nonvolatile semiconductor is characterized in that, comprising:
One system interface is in order to electrically connect with an application system, to receive the instruction that this system is assigned;
One memory interface is in order to electrically connect with this nonvolatile memory;
One temperature sensing interface is in order to electrically connect with a temperature sensing component, to receive the temperature sensing signal that this temperature sensing component is transmitted; And
One microprocessor is electrically connected at this system interface, this memory interface and this temperature sensing interface respectively;
Wherein this microprocessor is controlled this nonvolatile memory by this memory interface;
Wherein this microprocessor receives and carries out the instruction that this application system is assigned by this system interface;
Wherein this microprocessor receives this temperature sensing signal by this temperature sensing interface.
10, Control Component according to claim 9, it is characterized in that, described Control Component also is preset with at least one temperature threshold value, this microprocessor is compared this sensing signal value and this temperature threshold value, and carry out corresponding program according to comparative result.
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| CN103035282A (en) * | 2011-09-30 | 2013-04-10 | 群联电子股份有限公司 | Memory storage device, memory controller and temperature management method |
| CN104346232A (en) * | 2013-08-06 | 2015-02-11 | 慧荣科技股份有限公司 | Data storage device and access limiting method thereof |
| CN107342101A (en) * | 2017-08-29 | 2017-11-10 | 郑州云海信息技术有限公司 | The temprature control method and temperature control system of a kind of solid state hard disc |
| CN108281161A (en) * | 2017-01-05 | 2018-07-13 | 爱思开海力士有限公司 | It is capable of the memory module of measuring temperature and uses its system |
| CN108304156A (en) * | 2017-01-13 | 2018-07-20 | 慧荣科技股份有限公司 | Host device and data transmission rate control method |
| CN108628544A (en) * | 2017-03-22 | 2018-10-09 | 慧荣科技股份有限公司 | Host device and data transmission rate control method |
| CN109273029A (en) * | 2017-07-17 | 2019-01-25 | 爱思开海力士有限公司 | Storage system and its operating method |
| CN109410994A (en) * | 2017-08-18 | 2019-03-01 | 群联电子股份有限公司 | Temprature control method, memory storage apparatus and memorizer control circuit unit |
| US11086564B2 (en) | 2017-08-10 | 2021-08-10 | Phison Electronics Corp. | Temperature control method, memory storage device and memory control circuit unit |
| CN113672461A (en) * | 2021-08-19 | 2021-11-19 | 中汽创智科技有限公司 | Working mode control method and device of memory, terminal and storage medium |
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| CN103035282A (en) * | 2011-09-30 | 2013-04-10 | 群联电子股份有限公司 | Memory storage device, memory controller and temperature management method |
| CN104346232A (en) * | 2013-08-06 | 2015-02-11 | 慧荣科技股份有限公司 | Data storage device and access limiting method thereof |
| CN108281161A (en) * | 2017-01-05 | 2018-07-13 | 爱思开海力士有限公司 | It is capable of the memory module of measuring temperature and uses its system |
| CN108281161B (en) * | 2017-01-05 | 2021-10-08 | 爱思开海力士有限公司 | Memory module capable of measuring temperature and system using the same |
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| CN108628544B (en) * | 2017-03-22 | 2022-04-01 | 慧荣科技股份有限公司 | Electronic device and data transmission rate control method |
| CN108628544A (en) * | 2017-03-22 | 2018-10-09 | 慧荣科技股份有限公司 | Host device and data transmission rate control method |
| CN109273029A (en) * | 2017-07-17 | 2019-01-25 | 爱思开海力士有限公司 | Storage system and its operating method |
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| CN109410994B (en) * | 2017-08-18 | 2021-06-22 | 群联电子股份有限公司 | Temperature control method, memory storage device and memory control circuit unit |
| CN109410994A (en) * | 2017-08-18 | 2019-03-01 | 群联电子股份有限公司 | Temprature control method, memory storage apparatus and memorizer control circuit unit |
| CN107342101A (en) * | 2017-08-29 | 2017-11-10 | 郑州云海信息技术有限公司 | The temprature control method and temperature control system of a kind of solid state hard disc |
| CN113672461A (en) * | 2021-08-19 | 2021-11-19 | 中汽创智科技有限公司 | Working mode control method and device of memory, terminal and storage medium |
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