CN101421826A - Packaging of mems devices - Google Patents
Packaging of mems devices Download PDFInfo
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- CN101421826A CN101421826A CNA2007800126953A CN200780012695A CN101421826A CN 101421826 A CN101421826 A CN 101421826A CN A2007800126953 A CNA2007800126953 A CN A2007800126953A CN 200780012695 A CN200780012695 A CN 200780012695A CN 101421826 A CN101421826 A CN 101421826A
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Images
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- Materials For Photolithography (AREA)
Abstract
The present invention is directed to a process for packaging a microelectrical, micromechanical, microelectromechanical (MEMS) or microfluidic component on a substrate by forming cavities made from crosslinked photoresists on an easily removable second substrate, bonding the cavities to third substrates containing selected microdevices, then peeling off the removable second substrate.
Description
Background of invention
1.
Invention field
The present invention relates to the packing of micro-structural.Specifically, the present invention relates to packing method, wherein do not rely on the manufacturing of apparatus assembly and make packed surface, use the low temperature bonding method then with the apparatus assembly bonding of wafer scale with the package component and the gained of gained.
2.
The concise and to the point description of correlation technique
The purposes that the SU-8 photoresist is used for making the permanent ＂ structure of the ＂ with high length-diameter ratio is that Micro Electro Mechanical Systems (MEMS) technology is known.SU-8 is a negativity, the epoxy resin photoresist system of Fang Daing chemically, and it is by nearly UV, x ray and electron beam irradiation imaging.The performance that SU-8 has many excellences for example its high-resolution, high length-diameter ratio ability, it processes easily, its chemical resistance, its mechanical strength and its applicability to 3-D processing.Because its simple and low-cost manufacturing capacity, SU-8 has been used for making many MEMS assemblies for example microfluid passage, chip lab (lab-on-a-chip) device, transducer and actuator, optics, passivation layer, dielectric components and MEMS packing etc.
Under the processing conditions of recommending the curing of SU-8 provide have high length-diameter ratio, the micrometer-class of high chemical resistance and mechanical tenacity.Therefore, SU-8 has been widely used in and has made ink-jet tube (U.S. Patent Application Publication No. 2004-0196335), Microspring probe card and RF MEMS packing (Daeche, F. wait people ＂ Low Profile Packaging Solution for RF-MEMSSuitable for Mass Production ＂, at Proc.36th InternationalSymposium on Microelectronics, Boston, Nov.2003. proposes).In addition, many lists of references have solved the low temperature bonding for the silicon of following device and silicon bonding recently: MEMS device (U.S. Patent number 6,669,803), optical element (Aguirregabiria, A. wait people's Novel SU-8 Multilayer TechnologyBased on Successive CMOS Compatible Adhesive Bonding and KaptonReleasing Steps for Multilevel Microfluidic Devices ＂), embedded microfluidic device (Blanco, F.J. wait people's ＂ Novel Three-DimensionalEmbedded SU-8 Microchannels Fabricated Using a Low TemperatureFull Wafer Adhesive Bonding ＂, J.Micromech.Microeng.14:1047 (2004)), the chip lab structure, wherein the imaging SU-8 of use and curing or uncured SU-8 or PMMA bonding makes 3-D structure (Balslev, S. wait people's ＂ Fully IntegratedOptical System For Lab-on-a-Chip Applications ＂, Proc.17th IEEEInternationa lConference on Micro Electro MechanicalSystems, Maastricht, NL, Jan.2004; Bilinberg, B. wait people's ＂ PMMA toSU-8 Bonding for Polymer Based chip lab Systems withIntegrated Optics ＂, submitted to J.Micromech Microeng.) and biochemical reaction device (Schultze, people's such as JLM ＂ Micro SU-8 chamber for PCR andFluorescent Real-Time Detection of Salmonella spp.DNA, Proc. μ TAS 2006 Conferences, Vol 2,1423 (2006)).
Usually, the SU-8 film forms sub-image through exposure, then under 90-95 ℃ of baking temperature processing and make the exposed portion of this film crosslinked, develop then to remove unexposed, uncrosslinked material, stay the required cross-linked structure of adhering to base material.Lamentedly, these structures directly can not be bonded on silicon, glass or the metal structure, not have any bonding strength because SU-8 is too crosslinked.Under solidifying, the SU-8 structure does not play a role yet.
Micro-structural is with bioactivator for example in the application of enzyme modification therein, and wherein the use of high temperature or longer tack time may make the biomolecule passivation of being considered, the use of low temperature bonding also may be useful.The example of these methods is especially based on the SU-8 layer of the continuous bonding of the SU-8 layer of two offset-printing imagings on individual wafers or an imaging and the uncured SU-8 or the bonding of PMMA tack coat.Under these situations, make the wafer contact, the compressed together heating fully then to cause that two polymeric layers bond together.In some cases, at two two similar or complementary imaging layers of preparation and under pressure and heat, these two wafer bondings being in the same place in silicon or chip glass or both combinations independently.Under another kind of situation, on two different base materials, carry out two lithographic step, one of them can be the silicon or the chip glass of silicon, processing, another is the Kapton thick film that scribbles SU-8.At this, before the bonding process, use the lithographic printing processing and the development step of standard to make the imaging of standard bottom base material.Yet only exposed the SU-8 layer on the Kapton film and the ground that do not develop use during the bonding process.After this two SU-8 layers bonding, peel off the Kapton film and the SU-8 stacked body is developed.By repeating this process above the structure, obtained the sandwich construction of SU-8 at this.
The SU-8 of imaging further is used for building the wall around the MEMS structure, adheres to lid then in the above, thus produce cavity protect or pack the MEMS device (people such as Daeche, above).Equally, tack coat is commonly used to obtain the bonding strength of the necessity between lid and the wall.As described, liquid SU-8 is spun on the device wafer and imaging and form the wall of device.Though make good progress in this case, the coating of liquid resist above active MEMS assembly can not be allowed usually.Secondly, applying lid is not inappreciable process, because liquid SU-8 can not be coated in the cavity top and nameless processing knack is necessary to producing this lid.Lid independently, for example but the bonding of glass requires to use tack coat once more can use.Ideally, thereby wish on distinct faces, to build wall construction and avoid getting in touch of liquid resist and developer and MEMS assembly, directly be bonded to this wall construction on the base material then, and preferably can build cavity, lid and whole, and whole cavity is bonded on the base material, describes as Fig. 1.So far, this does not also realize as far as we know, because the SU-8 of imaging is not enough fusible directly to be bonded to for example silicon or on glass of hard base material.In addition, for example above-described also not commercially available so that this method of the dry film pattern of SU-8 can easily be used.
Can be used for micro-structural that MEMS, microfluid and RF MEMS use for example gas channel, reservoir especially the packing of transducer and actuator become more and more important, and usually, the packing cost of MEMS device may surpass 50% of total device cost.For the economic large-scale production of MEMS assembly, the wafer level packaging method of simple and cheap material and method will be required to obtain to adopt.In addition, the method compatible with conventional IC processing of wafers technology will be attractive, and this is owing to wafer assemblies and package component seamlessly being integrated.Therefore, this method also can be applied to the IC packaging applications; Especially be applied to wafer level packaging and 3-D interconnecting method.The present invention it is believed that and solved these needs.
Summary of the invention
In one aspect, the present invention relates on base material, pack microelectronics, micromechanics, the method for microelectron-mechanical (MEMS) or microfluid component may further comprise the steps:
(a) form the ground floor casting die, it comprises the photoimageable polymer photoresist of first negativity layer that is positioned on first base material;
(b) form second layer casting die, it comprises the photoimageable polymer photoresist of second negativity layer that is positioned on second base material;
(c) this ground floor casting die is exposed in the radiant energy in the first photoimageable polymer photoresist layer, to form the sub-image part;
(d) the ground floor casting die is bonded on the second layer casting die so that this imaging moiety contacts with the second photoimageable polymer photoresist layer;
(e) should in conjunction with the part of the first and second photoimageable polymer photoresist layers be exposed in the radiant energy in the photoresist layer of this combination, to form second sub-image; The exposed portion of the described combination of this first and second photoresists layer corresponds respectively to the lid and the wall part of at least one packaging structure of this microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(f) remove second base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (g) will bond so that this film the exposure area is crosslinked before this;
(h) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(i) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(j) face of winning of step (h) is bonded to second of step (i) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(k) first and second from this combination remove first base material.
In one aspect of the method, the present invention relates on base material, pack microelectronics, micromechanics, the method for microelectron-mechanical (MEMS) or microfluid component may further comprise the steps:
(a) cambium layer casting die, it comprises the photoimageable polymer photoresist of the negativity that is positioned on base material layer;
(b) a part that will this photoimageable polymer photoresist layer is exposed in the radiant energy to form sub-image in this photoresist layer; The described exposed portion of this photoresist layer is corresponding to the wall part of at least one packaging structure of this microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(c) remove base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (d) will bond so that this film the exposure area is crosslinked before this;
(e) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(f) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(g) face of winning of step (e) is bonded to second of step (f) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(h) first and second from this combination remove first base material.
These and other aspect will figure out after reading following detailed description of the invention.
The accompanying drawing summary
By read following detailed description the in detail together with accompanying drawing, will understand the present invention more completely, wherein:
Fig. 1 relates to the structured wafer level imaging on the thin polymer film and is bonded to fabrication scheme on the base material, and this base material population has at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device; With
Fig. 2 relates to the wall construction wafer scale imaging on the thin polymer film and is bonded to fabrication scheme on the base material, and this base material population has at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device, then is the follow-up bonding of follow-up base material.
Detailed Description Of The Invention
As noted before, the present invention relates at the single or multiple microelectronics of base material packing, micromechanics, the multistep method of microelectron-mechanical (MEMS) or microfluid component. The method mainly comprises makes the packed surface that does not rely on apparatus assembly, uses then the low temperature bonding method with wafer scale this two sides to be bonded together. The present invention has some advantages, comprises that (1) avoid apparatus assembly and liquid or dry film photoresist, resist development agent or other processing chemicals to contact; (2) reach the bonding of package component and apparatus assembly and do not have complicated manufacturing step; (3) provide the packaging structure of mechanical rigid and anti-most of chemical environment; (4) permission causes the easy change of package design and size owing to the variation of designs and size.
In relating to the field of photoimageable composition; photoresist is generally understood as stripping lacquer; described stripping lacquer is used for optionally protecting a zone of base material to avoid the interference in another zone, so that the subsequently operation of technology only takes place in a zone of the base material that is not covered by photoresist. In case finish this operation subsequently, just remove photoresist. Therefore, the performance of this interim photoresist only be obtain desired image curve and anti-subsequently processing step effect desired those. Yet the present invention has also solved and has not wherein removed the photoresist layer and used as the application of the permanent structure assembly in the device to be manufactured. Using in the situation of photoresist as permanent layer, the material property of light actuating resisting corrosion film must be compatible with function and final use that this device is planned. Therefore, the Photoimageable layer that keeps as the permanent part of device is called as permanent photoresist herein.
The redaction of SU-8 is introduced recently, its with standard SU-8 compare with SU-8 2000 resists be more pliability, toughness and produce the uncured film with lower Tg, U.S. Patent Application Publication No. 2005/0260522 A1. By using these novel resists, might develop the method that allow to produce such SU-8 image, namely this image can easily be developed and produces the fine lines structure and still provide under low sticking temperature for example adhesion of silicon wafer, glass, metal and polymer and SU-8 excellence of typical substrates widely. In addition, the study sample of the dry film version of this resist has become and can obtain and provide chance very scarcely ever easily to make the simple packing method that this class formation also allows simultaneously the multilayer possibility of stacking device, microfluidic structures and optics and allows many MEMS devices. In addition, dry film material even more convenient use because it increases flux significantly because baking prolong the time interval no longer necessary, and provide simultaneously the uniform outer surface that does not have the edge pearl. Dry film also can be used for having the application of irregularly shaped base material and a plurality of layers deposition can adopt the straightforward procedure of hot-roll lamination or wafer bonding to reach.
Process the ability that is coated in advance the SU-8 on transparent PETG (PET), PEN (PEN) or polyimides (Kapton) film and allow during composition, succeeding layer to be alignd, and permission is alignd with the population base material. The SU-8 method allows do not having to obtain bonding in the situation of complicated manufacture method. In addition, the method provides the structure of mechanical rigid and anti-various chemical environments.
The photoimageable material that uses in the inventive method must satisfy two general standards. At first, photoimageable material must can be bonded on the base material after exposure, postdevelopment bake and development. Secondly, photoimageable material must crosslinkable develops to the little and draw ratio of the width 10 μ m level greater than 1:1 to the permission wall construction, still still keeps the ability that is bonded to subsequently on the 3rd base material. Some new photoimageable materials satisfy these criterions at present.
SU-8 3000、SU-8 4000、Micro
3000 and Micro 4000
The preferred first and second negativity photopolymerizable polymer photoresists that use among the present invention are disclosed photo-corrosion-resisting agent compositions among U.S. Patent Application Publication No. 2005/0260522 A1, introduce in full for reference at this. These photo anti-corrosion agent materials can trade name SU-8 3000 and SU-8 4000 is purchased and can be from MicroChem Corp., Newton, and MA obtains. MicroForm 3000 and MicroForm 4000 are respectively the dry film versions of disclosed SU-8 3000 and SU-84000 in applying for as described and also are illustrated that the document is introduced for reference at this in full in the U.S. Patent application 60/680801 on May 13rd, 2005. Briefly, disclosed photoresist can be used for making the permanent photoresist layer of negativity and comprises in these publications:
(A) one or more are according to the bisphenol-A-novolac epoxy resin of general formula I
Its each radicals R can be selected from glycidyl or hydrogen individually, and the k in the general formula I is the real number of 0-about 30;
(B) be selected from one or more epoxy resin in the group that Formula B IIa and BIIb represent;
Each R in Formula B IIa wherein1、R
2And R3Be independently selected from hydrogen or contain the alkyl of 1-4 carbon atom, the numerical value p in Formula B IIa is the real number of 1-30; Numerical value n in Formula B IIb and m are the real number of 1-30 independently, the R in Formula B IIb4And R5Be independently selected from hydrogen, contain alkyl or the trifluoromethyl of 1-4 carbon atom;
(C) one or more cation light initiators (also claiming light acid producing agent or PAG); With
(D) solvent of one or more in liquid formulations.
Except component (A) only also optionally comprises one or more of following additives materials according to composition of the present invention to (D): (E) one or more of optional epoxy resin; (F) one or more of reactive monomers; (G) one or more of sensitising agents; (H) one or more of adhesion promotors; (J) one or more of light-absorbing compounds comprise dyestuff and pigment; (K) one or more of organic group aluminium ions obtain agent (gettering agent). Except component (A) only to (K), also optionally comprise additional material according to composition of the present invention, include but not limited to flow control agent, thermoplasticity and thermosetting organic polymer and resin, inorganic filling material, free radical photo-initiation and surfactant.
This permanent photo-corrosion-resisting agent composition is made up of following: bisphenol-A phenolic epoxy resin (A); One or more of epoxy resin (B) with Formula B IIa and BIIb representative; One or more of cation light initiators (C); And optional additive.
Be suitable for bisphenol-A phenolic epoxy resin of the present invention (A) and have the weight average molecular weight of preferred 2000-11000, and the resin of weight average molecular weight 4000-7000 is especially preferred. By Japanese Epoxy Resin Co., Ltd., Tokyo, the Epicoat that Japan makes
157 (epoxide equivalent is that 180-250 gram resin/equivalent epoxides (g resin/eq or g/eq) and softening point are 80-90 ℃) and by Hexion Specialty Chemicals, Inc.Houston, the Texas manufacturing
SU-8 Resin (epoxide equivalent is that 195-230g/eq and softening point are 80-90 ℃) and analog are quoted the preferred embodiment as the bisphenol-A phenolic epoxy resin that is suitable for using in the present invention.
Be flexible and strong according to formula (BIIa) and epoxy resin (BIIb) (B), and can obtain the performance identical with formed pattern. The example of the epoxy resin (BIIa) that uses in the present invention is the epoxy resin according to Japanese Kokai patent No.Hei9 (1997)-169834, it can be by making two (methoxy phenyl) and phenol reactants, makes then chloropropylene oxide and gained resin reaction and obtain. The example of the commercial epoxy resin of general formula I Ia is by Nippon Kayaku Co., Ltd.Tokyo, and epoxy resin NC-3000 (epoxide equivalent is that 270-300g/eq and softening point are 55-75 ℃) and analog that Japan makes are quoted as an example. It should be understood that can be used for according to composition of the present invention more than a kind of epoxy resin according to Formula B IIa. The instantiation that can be used for epoxy resin BIIb of the present invention is by Nippon-Kayaku Co., Ltd, Tokyo, NER-7604, NER-7403, NER-1302 and NER 7516 resins that Japan makes. It should be understood that can be used for according to composition of the present invention more than a kind of epoxy resin according to Formula B IIb.
When passing through dynamic rays, the compound that produces Bronsted acid during such as radiation such as ultraviolet rays is preferably used as the cationic photopolymerization initator (C) that uses among the present invention. Aromatics iodine father-in-law's complex salts and aromatic sulfonium complex salts are quoted as an example. The quilts such as diphenyl iodine father-in-law hexafluorophosphate, diphenyl iodine father-in-law hexafluoro antimonate, two (4-nonyl phenyl) iodine father-in-law hexafluorophosphate, [4-(octyloxy) phenyl] phenyl-iodide father-in-law hexafluoro antimonate, two (4-tert-butyl-phenyl) iodine father-in-law three (fluorine mesylate) methide are quoted the instantiation as spendable aromatics iodine father-in-law complex salts. In addition, the triphenylsulfonium hexafluorophosphate, the triphenylsulfonium hexafluoro antimonate, triphenylsulfonium four (pentafluorophenyl group) borate, 4,4 '-the two hexafluorophosphates of two [diphenyl sulfonium] diphenylsulfide, phenylcarbonyl group-4 '-diphenyl sulfonium diphenylsulfide hexafluorophosphate, phenylcarbonyl group-4 '-diphenyl sulfonium diphenylsulfide hexafluoro antimonate, diphenyl [4-(thiophenyl) phenyl] sulfonium hexafluoro antimonate, diphenyl [4-(phenyl sulphur) phenyl] sulfonium three (perfluor ethyl) three fluorophosphates etc. can be quoted the instantiation as spendable aromatic sulfonium complex salts. Also can use some ferrocene-containing compounds, the Irgacure 261 that is for example made by Ciba Specialty Chemicals. Can use cation light initiator (C) separately or with the form of mixtures of two or more.
The solvent that relates to (D) no longer is present in the laminated film.
Randomly, it may be favourable using additional epoxy resin (E) in composition. Depend on its chemical constitution, absorbance or physical property that optional epoxy resin (E) can be used for regulating the lithographic printing contrast of photoresist or improves photoresist film. Optional epoxy resin (E) can have the epoxide equivalent that scope is 150-250 gram resin/equivalent epoxides. The example of the epoxy resin that fit for service is optional comprises the Co. by Nippon Kayaku, Ltd., and Tokyo, the EOCN 4400 that Japan makes, a kind of epoxide equivalent is epoxy radicals cresols-novolac resin of about 195g/eq. Another kind of preferred commercial embodiments is EHPE 3150 epoxy resin, and its epoxide equivalent is 170-190g/eq and by Daicel Chemical Industries, Ltd., and Osaka, Japan makes.
Randomly, in some embodiments, can advantageously in composition according to the present invention, use reactive monomer compound (F).Comprise that in composition reactive monomer helps to increase uncured and pliability cured film.The glycidyl ether that contains two or more glycidyl ethers is the example of spendable reactive monomer (F).Can use glycidol ether separately or with the form of mixtures of two or more.Trihydroxymethylpropanyltri diglycidyl ether and polypropylene glycol diglycidyl ether are the preferred embodiments that can be used for reactive monomer of the present invention (F).Alicyclic epoxide compound also can be as reactive monomer (F) and the methacrylic acid 3 among the present invention, 4-epoxycyclohexyl methyl esters and 3, and 4-epoxycyclohexyl methyl-3 ', 4 '-the epoxy-cyclohexane carboxylate can quote as an example.
Randomly, photosensitizer compounds (G) can be included in the composition so that more ultraviolet rays are absorbed, and the energy that is absorbed is transferred on the cationic photopolymerization initator.Therefore, reduce the process time of exposure.Anthracene and N-alkyl carbazole compound are the examples of the sensitising agent that can use in the present invention.The anthracene compound (9,10-dialkoxy anthracene) that has alkoxyl on 9 and 10 is preferred sensitising agent (G).This 9,10-dialkoxy anthracene also can have substituting group.Provide the C1-C4 alkyl, for example methyl, ethyl, propyl group and butyl are as the example of alkyl structure part on the anthracene nucleus.Can use sensitizer compound (G) separately or with the form of mixtures of two or more.
The example of the optional adhesion promotion immunomodulator compounds (H) that can use in the present invention comprises 3-glycidoxypropyltrimewasxysilane, 3-glycidoxypropyl triethoxysilane, 3-sulfydryl propyl trimethoxy silicane, vinyltrimethoxy silane, [3-(methacryloxy) propyl group] trimethoxy silane etc.
Randomly, can comprise usefully that absorption actinic ray and the absorptivity under 365nm are 15L/g.cm or higher compound (J).Can use this compound that the cross section of the camegraph with back taper shape is provided, so that be wider than the image forming material of bottom diagram picture at the image forming material of image top.The instantiation of compound (J) can be used for the present invention by oneself or as mixture.
Randomly, can use organo-aluminum compound (K) to obtain agent in the present invention as ion.Organo-aluminum compound is not particularly limited, as long as it is to have to absorb the effect that is retained in the ionic material in the cured product.Can use these components (K) separately or with the bond form of two or more components, and in the time must alleviating harmful effect of the ion that produces by above-mentioned optical acid generating agent compound (C), use them.
The consumption of spendable bis-phenol novolaks component A is component A, B and C and if existence, the randomly 5-90wt% of the total weight of epoxy resin E, reactive monomer F and adhesion promotor H, more preferably 25-90wt%, most preferably 40-80%.
The consumption of spendable epoxy resin ingredient B is component A, B and C and if existence, the randomly 10-95wt% of the total weight of epoxy resin E, reactive monomer F and adhesion promotor H and more preferably 15-75wt% and most preferably 20-60wt%.
The consumption of spendable smooth acid producing agent Compound C is component A, B and and if existence, the randomly 0.1-10wt% of the total weight of epoxy resin E, reactive monomer F and adhesion promotor H.More preferably use the C of 1-8wt% and most preferably use 2-6wt%.
When using optional epoxy resin E, the consumption of spendable resin E is component A, B and C and if exist, randomly the 5-40wt% of the total weight of epoxy resin E, reactive monomer F and adhesion promotor H, more preferably 10-30wt%, most preferably 15-30wt%.
When using optional reactive monomer F, the consumption of spendable F is component A, B and C and if exist, randomly the 1-20wt% of the total weight of epoxy resin E, reactive monomer F and adhesion promotor H, more preferably 2-15wt% and most preferably 4-10wt%.
When using, optional sensitising agent component G can be with respect to light trigger component C, exists with the consumption of 0.05-4.0wt%, more preferably uses 0.5-3.0wt%, most preferably uses 1-2.5wt%.
Randomly, can use epoxy resin, epoxy acrylate and methacrylate resin and acrylate and methacrylic acid ester homopolymer and copolymer except component A, B and E in the present invention.Phenol-novolac epoxy resin, tris-phenol epoxy resin etc. are cited as this example for the epoxy resin that substitutes, methacrylate monomers, pentaerythrite tetramethyl acrylate and dipentaerythritol five-and six-methacrylate for example, methacrylate oligomers, for example epoxy radicals methacrylate, urethane methacrylate, polyester polymethacrylates etc. are cited as the example of methacrylate compound.Employed consumption is preferably the 0-50wt% of the total weight of component A, B and E.
In addition, can use optional inorganic filler in the present invention, for example barium sulfate, barium titanate, silica, amorphous silicon oxide, talcum, clay, magnesium carbonate, calcium carbonate, aluminium oxide, aluminium hydroxide, montmorillonitic clay and mica powder and various metal dust, for example silver, aluminium, gold, iron, CuBiSr alloy etc.The content of inorganic filler can be the 0.1-80wt% of composition.Equally, can introduce organic filler similarly, for example polymethyl methacrylate, rubber, fluoropolymer, cross-linked epoxy thing, polyurethane powder etc.
In case of necessity, can further use various materials, for example crosslinking agent in the present invention.The reagent that thermoplastic resin, colouring agent, thickener and promotion or improvement adhere to.When using these additives etc., their general content in composition 0.05-10wt% that respectively does for oneself, but optionally, can increase or reduce this consumption according to application purpose.
XP SU-8 Flex and XP Micro
1000
The another kind of preferred photopolymerizable polymer photoresist that can be used for according to first and second photoresists of the inventive method is a U.S. Patent number 6,716, disclosed photo-corrosion-resisting agent composition among 568 B2 and U.S. Patent Application Publication No. 2005/0266335 A1, the document is incorporated herein for reference in full.These photo anti-corrosion agent materials can trade name XP SU-8Flex and Micro
1000 are purchased and can be from MicroChemCorp., Newton, and MA obtains.MicroForm 1000 is dry film form of SU-8 Flex composition.Briefly, disclosed photo-corrosion-resisting agent composition is by (A) at least a epoxidised multiple functionalized bisphenol-A formaldehyde resin in these publications; (B) at least a PCL polyol reaction diluent; (C) at least a smooth acid producing agent and (D) photoresist made of at least a dissolving (A), (B) and solvent (C).Similar compositions is disclosed in Kieninger, people's such as J. ＂ 3D Polymer Microstructures by LaminatingFilms ＂, and Proceedings of μ TAS 2004 Vol.2,
SE is among the p363 (2004).
The epoxidised multiple functionalized bisphenol a resin (A) that is suitable for this photoresist has the weight average molecular weight of preferred 2000-about 11000 and the resin of weight average molecular weight 3000-7000 is especially preferred.By Japan Epoxy Resin Co., Ltd. makes
157 (epoxide equivalent weight 180-250 and softening point 80-90 ℃) and by Hexion SpecialtyChemicals, Inc. makes
SU-8 resin (epoxidised multiple functionalized bisphenol-A formaldehyde phenolic resin varnish has average about 8 epoxy radicals and has the mean molecule quantity of about 3000-6000 and the epoxide equivalent weight of 195-230g/eq and 80-90 ℃ softening point) waits the conduct that is cited to be suitable for the preferred embodiment of the multiple functionalized bisphenol-A phenolic varnish gum of epoxidation of the present invention.Shown in the general formula I, wherein R is hydrogen or glycidyl to preferred construction in the above, and k is the real number of 0-about 30.
PCL polyol component (B) is included in strong acid influence can and serve as the reactive diluent of epoxy resin with the hydroxyl of epoxy reaction down.This PCL polyalcohol makes dry coating softening and therefore prevent to break when the flexible substrate of the coating of reeling around cylinder coating so that the coiled material of dry film photoresist to be provided.This pliability feature is important to practical operation of the present invention, requires the coiled material of dry film photoresist to be installed on the laminating machine because be commonly used to apply the lamination machine of dry film photoresist.Being suitable for PCL examples of polyhydric alcohols of the present invention is ＂ TONE 201 ＂ and ＂ TONE 305 ＂ that obtain from Dow Chemical Company.＂ TONE 201 ＂ are Bifunctionalized PCL polyalcohols of the about 530 gram/moles of number-average molecular weight, have the structure shown in general formula 2,
General formula 2
R wherein
1Be proprietary aliphatic hydrocarbyl, mean value n=2.TONE 305 is trifunctional PCL polyalcohols of the about 540 gram/moles of number-average molecular weight, has the structure shown in general formula 3,
General formula 3
R wherein
2Be proprietary aliphatic hydrocarbyl, mean value x=1.
When by dynamic rays, the compound that for example produces Bronsted acid during radiation such as ultraviolet ray is preferably used as the light acid producing agent (C) that uses in this photoresist.Aromatics iodine father-in-law's complex salts and aromatic sulfonium complex salts are quoted as an example.Quilts such as diphenyl iodine father-in-law hexafluorophosphate, diphenyl iodine father-in-law hexafluoro antimonate, two (4-nonyl phenyl) iodine father-in-law hexafluorophosphate, [4-(octyloxy) phenyl] phenyl-iodide father-in-law hexafluoro antimonate, two (4-tert-butyl-phenyl) iodine father-in-law three (fluorine mesylate) methide are quoted the instantiation as spendable aromatics iodine father-in-law complex salts.In addition, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoro antimonate, triphenylsulfonium four (pentafluorophenyl group) borate, 4,4 '-two hexafluorophosphates of two [diphenyl sulfonium] diphenylsulfide, phenylcarbonyl group-4 '-diphenyl sulfonium diphenylsulfide hexafluorophosphate, phenylcarbonyl group-4 '-diphenyl sulfonium diphenylsulfide hexafluoro antimonate, diphenyl [4-(thiophenyl) phenyl] sulfonium hexafluoro antimonate, diphenyl [4-(phenyl sulphur) phenyl] sulfonium three (perfluor ethyl) three fluorophosphates etc. can be quoted the instantiation as spendable aromatic sulfonium complex salts.Also can use some ferrocene-containing compounds, for example the Irgacure 261 that makes by Ciba Specialty Chemicals.Can use cation light initiator (C) separately or with the form of mixtures of two or more.
Preferred light acid producing agent is made of the mixture of the triarylsulfonium salt with the structure shown in the following general formula 4,
General formula 4
Wherein Ar represents the mixture of aryl.This kind material can be purchased with trade name CYRACURE Cationic Photoinitiator UVI-6976 from Dow Chemical Company, and about 50% solution that its compound by general formula 4 is dissolved in propylene carbonate constitutes.The one pack system version of general formula 4 usefully also can be from San Apro Limited, Kyoto, and Japan is purchased, and it is sold with trade name CPI-101A or CPI-110A.
The solvent that relates in the composition (D) no longer is present in the laminated film.
Except only component (A) is to (D), said composition can also randomly comprise one or more and plant the following additives material: (E) one or more plant optional epoxy resin; (F) one or more plant reactive monomer; (G) one or more plant sensitising agent; (H) one or more plant adhesion promotor; (J) one or more plant light-absorbing compound, comprise dyestuff and pigment; (K) one or more surperficial levelling agents and (L) boiling point greater than one or more solvents of 150 ℃.Except only component (A) is to (L), said composition also can randomly comprise additional material, includes but not limited to flow control agent, thermoplasticity and thermosetting organic polymer and resin, inorganic filling material and free radical photo-initiation.
The enforcement of the inventive method
The method according to this invention, multistep technology is used for the photo-imaging polymer architecture that produces micron or millimetre-sized almost Any shape, size, height or position having on the flexible substrate of limited adhesion, then this construction bonds is had to population on the base material of active device with seal or form around with the shell above this type of active device randomly.This type of device includes but not limited to microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device or assembly.The basic step of this method is as follows:
(a) form the ground floor casting die, it comprises the photoimageable polymer photoresist of first negativity layer that is positioned on first base material;
(b) form second layer casting die, it comprises the photoimageable polymer photoresist of second negativity layer that is positioned on second base material;
(c) this ground floor casting die is exposed in the radiant energy in the first photoimageable polymer photoresist layer, to form the sub-image part;
(d) the ground floor casting die is bonded on the second layer casting die so that this imaging moiety contacts with the second photoimageable polymer photoresist layer;
(e) should in conjunction with the part of the first and second photoimageable polymer photoresist layers be exposed in the radiant energy in the photoresist layer of this combination, to form second sub-image; The exposed portion of the described combination of this first and second photoresists layer corresponds respectively to the lid and the wall part of at least one packaging structure of this microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(f) remove second base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (g) will bond so that this film the exposure area is crosslinked before this;
(h) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(i) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(j) face of winning of step (h) is bonded to second of step (i) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(k) first and second from this combination remove first base material.
This polymer architecture is cavity shape usually, has the lid that contacts with base film or top and at this wall above lid.Lid can be that solid piece or it can comprise opening to allow to lead to other part of external environment condition or this population base material.Polymer architecture can also only comprise the wall that contacts with base film.The film that will comprise this polymer architecture then places with the population base material and contacts, and the top of its mesospore contacts with substrate surface.Under suitable pressure, temperature and time condition, this wall is bonded on the base material to finish the permanent bond of two contact surfaces then.Adhesive strength has such quantity so that allows the structure of this encapsulation to keep protected after the typical life test of this type of device.This method does not plan to provide seal protection, because polymer generally is not waterproof branch or gas, but the diaphragm that this kind protection can be easily applies other by the superstructure in bonding obtain with the protection that nearly sealing level is provided.
The operable substrate material that holds this type of active device includes but not limited to, the glass of silicon, silicon dioxide, silicon nitride, silica, quartz, glass, aluminium oxide, glass-ceramic, GaAs, indium phosphide, copper, aluminium, nickel, iron, Ni-Fe, steel, cupro silicon, indium-tin-oxide-coated, organic film for example polyimides and polyester, have any base material, semiconductor and the insulating material etc. of the pattered region of metal.Randomly, can before applying light actuating resisting corrosion film, on base material, carry out baking procedure and absorb moisture to improve adhesive strength to remove.In addition, for identical purpose, can use plasma descum, prime treatment or surface activation step to come before bonding, to clean or activate the surface of base material.
Base material can population has the device of any kind almost and can comprise passive device or structure and active device, no matter is the device of microelectronics, micromechanics, photoelectron or microelectron-mechanical.The purpose of the practical function of device or purpose and this method is uncorrelated.Yet this method is mainly the packing of MEMS device and designs.
Normally PETG (PET), PEN (PEN) or polyimides be for example for the flexible substrate with limited adhesion that has formed polymer architecture on it
, but can use other similar flexible substrate.These film unique distinctions are that they provide the stable support of light actuating resisting corrosion film and only show solidifying and the limited adhesion of uncured light actuating resisting corrosion film.They further have fully the adhesion of crosslinked or partial cross-linked polymer architecture and enough structure, chemistry and thermal stabilitys are processed to form this class formation to allow the standard photo resist, and do not have structure to fall from film during processing.In case be bonded on the population base material this film and just can easily remove from this polymer architecture yet adhere to enough weak consequently polymer architecture.In addition, these flexible films are used as the carrier substrate of commercially available dry film photoresist laminate usually.
The photoimageable laminated material that this method requires can be prepared as follows by the liquid photo-corrosion-resisting agent composition from commercial sources purchase or they when suitable: directly be spin-coated on the flexible film, use the baking of standard photo resist method with cambium layer extrusion layer on this pliability support membrane then.
First step of this method is the ground floor that forms polymer architecture on the lamination coating.Usually, it is the lid or the top of packaging structure, and it can comprise or can not comprise any opening or hole.For simplicity, usually laminate is cut or struck out the test specimen of circle or wafer shape, but irregular shape is effective equally.Then have the standard projection of required pattern, near to or in contact with exposure tool in the exposure of this film.For the ease of handling, can use temporary adhesive with stacks of thin films to the base material of rigidity more for example maybe it can be attached on the silicon wafer cutting (dicing) with on so that the structural rigidity of increase to be provided.Can adopt cover plate in position this laminate exposure maybe can be removed this cover plate so that improved lithographic performance to be provided.At this moment, the sub-image with ground floor embeds this film and can adhere to the second layer this moment after removing cover plate.Yet after exposure and removing cover plate, the method that can also use manufacturer to recommend as resist is further processed this laminate to be provided as the cap structure of picture on base film.The advantage that this replacement scheme has be in resist, provide alignment structures with allow second or parietal layer align with cover layer.
Secondly, with the second layer of resist film be laminated to ground floor above, no matter imaging is whether.Can before or after lamination, second film be cut or strike out required form.Second mask that will comprise wall construction is then usually aimed at first imaging layer and as above exposure.Alternatively, can under the situation that is not laminated to ground floor, make second layer imaging, only be comprised the structure of wall.If they will be the layers of waiting to be bonded to the population base material, then remove cover plate and continue processing.If will use additional layer, then can repeat this step and add the required number of plies up to by the additional layer of lamination.Then postexposure bake should in conjunction with laminate layers provide required structural walls quality and necessary ＂ viscosity ＂ to be bonded to fully on the population base material to allow imaging arrangement so that necessary partial cross-linked degree to be provided.
Successful bonding range request obtain partial cross-linked via gentleness exposure and/or PEB condition.Lower exposure energy seems to influence indistinctively the cementitiousness of the SU-8 structure of development, but influences the lithographic printing ability of this process really.In most cases, have been found that standard exposure dosage is normally preferred.Yet, lower PEB temperature and time find be requirement be patterning SU-8 3000, SU-8 4000 or the acceptable bonding process of MicroForm structure with the acquisition.This following confirmation: processing SU-8 3000 films under ＂ standard ＂ condition, use 95 ℃ typical PEB to keep 4 minutes, and use following identical bonding condition to be bonded on the silicon wafer.Bond under these conditions after this class formation PEB ' d, find that adhesiveness is unacceptable (almost 100% loss) in the tape test process.
For PEB selects the loss balance of suitable temperature requirement with improved adhesiveness and lithographic printing quality.In this case, target is set artificially, or in the thick film of 25 μ m, obtains 10 μ m resist walls or in the thick film of 50 μ m, obtain 20 μ m resist walls for can access draw ratio above 2:1.60,50 and 40 ℃ PEB temperature keeps finding in 2 and 1 minutes that the processing in this case is suitable.But the acceptable conditions that 50 μ m films are obtained is at 60 ℃ of following PEB2 minutes, then development in 6 minutes under gentleness is stirred.Fully the residual developer of flushing is necessary after development is finished, because residual developer comprises the photoresist component of dissolving, if allow residual resist to be dried on the base material, then this photoresist component will form deposit in matrix.
The 3rd, imaging arrangement is aimed at and is bonded on the population base material.Can in wafer bonding system with alignment capabilities or dry film lamination system, finish bonding.Find the adhesiveness after boning to be had bigger influence at the processing conditions of film before the bonding than bonding condition itself.When exposure suitably with during PEB ' d, the discovery of the bonding condition of wide region is acceptable.Based on bibliographical information, in the condition of 100 ℃ of following 45psi through selecting as starting point.Bonding studies show that in the pressure of the 95 ℃ of following 45psi pair reasonable adhesion with silicon wafer and make good progress, even still like this under the obtainable short tack time when the use laminating machine time.Higher pressure not expection is necessary and does not estimate.Surpass 100 ℃ sticking temperature and also do not have interests.Bonding 100 ℃ the fact at the most is unexpected, because its allows to use commercial PET base film rather than more expensive polyimides, this polyimides also must liquid state apply.
Bonding research shows that also this kind high temperature and pressure are unnecessary.Under the pressure of 5psi, adopt various circulation timeis or laminate speed can on wafer bonding and laminating apparatus, all obtain enough bondings with low in low temperature to 60 ℃.On wafer bonding equipment, lower temperature provides the circulation timei of remarkable minimizing, and this is owing to cool cycles slower on these instruments.On laminating apparatus, in order to be effectively, lower sticking temperature and pressure require slower laminate speed.The combination of higher temperature and the laminate speed of Geng Gao also is successful.Only use simple hot-roll lamination also to obtain patterning SU-8 4000 or MicroForm 4000 structures successful bonding to silicon.
The 4th, after polymer architecture is laminated on the population base material, allow this film-base material stacked body cool to room temperature to keep a few minutes.Carrier film with any supporting construction for example cutting belt easily and peel off with the population base material cleanly, this base material holds the structure that polymer cavity or other and base material bond this moment.In some cases, carrier film is peeled off certainly with polymer architecture after cooling.
At last, 95-250 ℃ of down hard baking packing base material 5-30 minute to improve the adhesive strength between polymer wall and the substrate surface.In fact, all samples that adheres to base material securely after bonding is being baked to 250 ℃ firmly keep will be by being with adherence test after 5 minutes.Many samples can not pass through this girdle tests at 95 ℃ after the hard baking of 5min, and still great majority will all pass through by this test and after 250 ℃ are added 5 minutes down after 150 ℃ of hard bakings in 30 minutes subsequently.
In an alternative embodiment, can postexposure bake before the bonding second layer casting die in step (d) and the ground floor casting die of development step (c).Self-evident, first and second of combination further can be laminated to the 3rd or laminate subsequently on, thereby make the amalgamation layer casting die of multilayer.
In another alternative embodiment, can omit the ground floor casting die and the second layer that in step (e), exposes individually to form the second only corresponding sub-image with parietal layer.Removing after second, with the sticking face of the second layer of the 3rd base material bonding can also be subsequently and the 4th base material, for example second silicon wafer, glass or polymer sheet bonding.In addition, wall on the 3rd base material can be subsequently with the 4th base material for example another wafer bonding to form wafer stacking body, glass or transparent plastic to form transparent cover, or with another imaging sheet material bonding forming sandwich construction, and other possibility, as shown in Figure 2.In Fig. 2, as an alternative embodiment, base material 3 and 4 only can use interchangeably and not need by shown in sequence use.The step of this alternative embodiment is as follows:
(a) cambium layer casting die, it comprises the photoimageable polymer photoresist of the negativity that is positioned on base material layer;
(b) a part that will this photoimageable polymer photoresist layer is exposed in the radiant energy to form sub-image in this photoresist layer; The described exposed portion of this photoresist layer is corresponding to the wall part of at least one packaging structure of this microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(c) remove base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (d) will bond so that this film the exposure area is crosslinked before this;
(e) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(f) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(g) face of winning of step (e) is bonded to second of step (f) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(h) first and second from this combination remove first base material.
Purposes
Method of the present invention is usually applicable to micromechanics, microelectronics or microelectron-mechanical (MEMS) assembly of manufacturing and encapsulation.In the method, the active structure of device is aggregated the thing cavity and covers, and this polymer cavity and device substrate bond consumingly and protect this active site to avoid external environment influence.In the method, this active device never contacts with the liquid that may be harmful to, chemicals or other method material.In order further to be protected from environmental impact, the polymer cavity can further scribble other polymeric material, glass, pottery or metallic film, and they can serve as moisture diffusion barrier, gaseous diffusion barrier or improved leak tightness is provided.This is to use the method for wafer level packaging cheaply of photoimageable resist, and this photoimageable resist is as the active part top that forever is retained in device.Method of the present invention can be applied to make various structures, but mainly is cavity, capping, wall or the passage in covering device structure-activity zone.
This method is mainly the various MEMS devices of packing and designs, and these devices can have almost virtually any size or the height in micron or millimeter scope.It still is a highly versatile, because this design can easily adapt to the different designs or the change of the size or the shape of assembly to be protected through change.One of current the most widely used application of SU-8 is that RF MEMS packing and this method can easily be applied to this application and other similar application.This method applicable to other typical MEMS device be accelerometer, micro-reflector, hold transducer or actuator, pressure sensor, fluid passage, biochemical reaction device, chemical probe, Electronic Nose, blood gas or pressure monitor or the implantable device of cantilever or other movable part.
Though main target application is a MEMS packing, this method also can be by with protection or seal the similar mode of this type of device and be used for many micromechanicss, microelectronics and optoelectronic applications.What be particularly useful will be that wafer level packaging is used, and comprise 3-D interconnection and chip-stacked.At this, the polymer cavity of gained can both provide the protection of reduced levels device, and the interval and second and the bonding platform of subsequent layer between the layer is provided again.
This method also can be bonded on second base material polymer assemblies with preparation as cost effective method, and for example, the biology of integration separates or detects diagnostic device.In fact, many MEMS devices are hybrid devices, and wherein different MEMS functions collect on the individual devices.For example, with the polymer MEMS structure that has formed directly be bonded to separate or diagnostic device on ability, and needn't apply and process the remarkable advantage that polymers compositions on this device can be provided in cost or makes the efficient aspect.Similarly, for example, glass or metal assembly can be bonded on the polymer device with the hybrid MEMS structure of same this kind of generation.
By means of following experiment and contrast the present invention is described in further detail.All parts and percentage by weight, all temperature are degree centigrade, unless offer some clarification in addition.
Embodiment
At first, by using spin coating of standard technology condition and baking liquid resist on PETG (PET) film, to prepare thick SU-8 3000 coatings of 25 or 50 μ m.Subsequently, use the thick XP Micro of 25,50 or 100 μ m
3000 and XPMicro
4000 study sample.Regulate exposure dose and PEB condition only to obtain the partial cross-linked of light actuating resisting corrosion film to improve the adhesion during follow-up adhesion step.
Directly processing this film on the PET and using EVG 620 Precision AlignmentSystem between this film and mask, to adopt the PET cover plate of thin 20-25 μ m to expose to avoid the ＂ stickup ＂ of film to mask with contact mode.When the base material that uses difference to adhere to for example during PET, uncured SU-8 film will preferentially paste on the glass mask after the contact exposure step.Alternatively, can or fluoridize antitack agent and handle this mask or resist film and paste with silicone, thereby allow cover plate before exposure, to remove to prevent mask.In addition, can expose by approaching or projection mode, thereby eliminating is to the needs of adherent layer, because there is not contact between mask and the film.After exposure, remove this film of postexposure bake under diaphragm (if use) and the temperature and time condition in various reductions.Use the standard recommendation condition that this film is developed then, wash up hill and dale to remove any resist that in developer, dissolves, dry then.Be stored as the picture film then up to bonding.
For PEB selects the loss balance of suitable temperature requirement with improved adhesiveness and lithographic printing quality.Use more to PEB that low temperature and shorter time also require than the shorter developing time of ＂ standard ＂ processing, this is owing to cooked possibility.In this case, target is set artificially, in the thick film of 50 μ m, obtains 20 μ m resist walls for can access draw ratio above 2:1.60,50 and 40 ℃ PEB temperature keeps finding processing in 2 and 1 minutes to be suitable.It is at 60 ℃ of following PEB2 minutes that 25 and 50 μ m films are obtained excellent results, then development in 6 minutes under gentleness is stirred.
Embodiment 1.Use the thick cavity structure of 20 μ m to prepare adhesion test on DuPont Riston hot-roll lamination machine, this cavity structure is formed by the spin coating SU-84000 that applies on the PET base material, and it is 60 ℃ of following PEB ' d 2 minutes.On Rist on hot-roll lamination machine, use 90-100 ℃ roll temperature, the roller speed of the roller pressure of 45psi and 0.3m/min with patterning SU-8 construction bonds to silicon wafer.In some cases, each wafer is used 3 times.In case the wafer cool to room temperature is just peeled off PET, stay this moment patterning SU-8 cavity structure with the silicon wafer bonding.Allow whole wafers under environmental condition, to leave standstill a whole night.Use the adhesion of simple tape test screen cloth wafer then.Carry out tape test with a Scotch band, this Scotch band is pressed into downwards on this SU-8 structure securely shuts down perpendicular to this wafer then.The reservation of 100% structure is defined as ＂ by ＂, removes fully to be defined as ＂ failure ＂: 5=passes through, the 1=failure.After for example hard baking of some bondings back processing and pressure cooker testing, carry out tape test.To toast 4 minutes down at 95 ℃ by the wafer of this bonding back tape test, allow under environmental condition, to leave standstill a whole night, and then the test adhesiveness.The result is shown in the Table I.
Table I
| Riston laminating machine response temperature. developing postpones pre-barbecue pressure-speed pass T 95 T 150 T 250 |
| Tested number ℃ sky yes-no psi m/min # |
| 1a 60 0 has 10 0.3 1455 1b 60 0 not have 45 1.5 1111 1c 90 0 has 45 1.5 5555 1d, 90 0 nothings, 10 0.3 5455 1e, 60 7 nothings, 10 1.5 5455 1f 60 7 to have 45 0.3 5555 1g, 90 7 nothings, 45 0.3 1555 1h 90 7 to have 10 1.5 1555 |
Embodiment 2.Prepare the additional samples of the thick film of 25 μ m by the MicroForm 4025 microbedding press molds that obtain from MicroChem, this film holds the wall construction (the wall width is 10 μ m-100 μ m) of various cavity size.On among the embodiment 1, processing the back side that these films are affixed on PET then to 5 mil cutting belt so that the processing rigidity to be provided.Exist then
On the 820 Dry FilmLamination System under 85 ℃ under different pressures and the velocity conditions or on the DuPontRiston laminating machine under the 45psi under different temperatures and velocity conditions with these films bonding.After removing the pet vector film that bonds with 5 mil cutting belt, all films and silicon wafer are well-bonded.All wafers also passes through tape test after 250 ℃ of hard bakings, but some do not pass through after 95 or 150 ℃ of hard bakings: 5=passes through, the 1=failure.The result is shown in the Table II.
Table II
| EVG820 laminating machine response force chuck temperature speed T 95 T 150 T 250 PCT 95 PCT 150 PCT 250 |
| Tested number N ℃ m/min |
| 2a 1000 85 2 3 4 5 — — 3 2b 6500 85 2 3 5 5 — 5 1 2c 6500 85 0.5 5 5 5 5 5 2 2d 1000 85 0.5 1 3 4 -- — 1 |
Embodiment 3.Prepare and process the additional samples of the thick cavity structure of 25 μ m on PET as in Example 2.Exist then
10mbar vacuum on the 520 Wafer Bonding System, 75 ℃ are adopted maximum temperature ramp and various cohesive pressure and pressure hold time before heating these films to be bondd down.After removing the pet vector film that bonds with 5 mil cutting belt, all films and silicon wafer are well-bonded.All wafers also passes through tape test after 250 ℃ of hard bakings, but some do not pass through after 95 or 150 ℃ of hard bakings: 5=passes through, the 1=failure.The result is shown in Table III and the IV.
Table III
| EVG520WB begins the temperature vacuum P ramp system of defeating and keeps heat etc. to become sticky junction temperature heating time |
| Tested number ℃ sec ℃ of min of mbar mbar min |
| 3a 22 10 maximum 2,000 0 45 75 0 3b, 22 10 maximums, 1000=P set, 45 75 0 3c, 22 10 maximum 2,000 5 45 75 0 3d, 22 10 maximum 2,000 0 45 75 30 3e 22 10 maximum 2,000 5 45 95 30 |
Table IV
| Response T 95 T 150 T 250 PCT 95 PCT 150 PCT 250 |
| Tested number |
| 3a 4 5 5 — 5 3 3b 3 3 5 — — 3 3c 4 5 5 — 5 1 3d 1 4 5 — — 1 3e 5 5 5 5 5 3 |
Embodiment 4.Prepare and process the additional samples of the thick cavity structure of 25 μ m on PET as in Example 2.On SUSS MicroTec SB 6e Substrate Bonder, adopt all temps ramp down then at 95 ℃, vacuum degree, cohesive pressure and heating retention time use the statistics EXPERIMENTAL DESIGN with these film bondings.Behind the pet vector film that removes with the attached subsides of 5 mil cutting belt, all films and silicon wafer are well-bonded.All wafers is also by tape test after the hard baking of 150 ℃ and 250 ℃, but a pair ofly do not pass through after 95 ℃ of hard bakings: 5=passes through, and 1=fails.The result is shown in Table V and the VI.
Table V
| SUSS SB 6e begins the temperature vacuum P ramp system of defeating and keeps heat etc. to become sticky junction temperature heating time |
| Tested number ℃ sec ℃ of min of mbar mbar sec |
| 4a 25 10 maximum 750 0 min, 95 0 4b, 25 10 maximum 750 0 180 95 5 4c, 25 10 maximum 3,000 0 min, 95 5 4d, 25 10 maximum 3,000 0 180 95 0 4e 25 10-2Maximum 750 0 min, 95 5 4f 25 10 -2Maximum 750 0 180 95 0 4g 25 10 -2Maximum 3,000 0 min, 95 0 4h 25 10 -2Maximum 3,000 0 180 95 5 4l, 25 10 maximum 3,000 0 min 95 0 |
Table VI
| Response T 95 T 150 T 250 PCT 95 PCT 150 PCT 250 |
| Tested number |
| 4a 5 5 5 5 5 4 4b 5 5 5 5 5 5 4c 5 5 5 5 5 1 4d 5 5 5 5 5 1 4e 5 5 5 5 5 1 4f 4 5 5 -- 5 1 4g 5 5 5 5 5 1 4h 2 3 5 — — 1 4i 5 5 5 5 5 1 |
Embodiment 2-4 pressure cooker testing.Under 125 ℃ and 15psi, all of embodiment 2,3 and 4 are put into pressure cooker by the sample of tape test and kept 100 hours, cooling a whole night, dry blended rubber girdle tests duplicate test.All samples by 95 and 150 ℃ of hard baking tape tests also passes through pressure cooker testing.All not exclusively pass through this tape test at 250 ℃ of hard down samples that toast subsequently.All 0.5 and 1mm than macrostructure all the test on the failure.Some of wall width 10 and 25 μ m are passed through this test than minor structure.Result of the test is included in the table.
Embodiment 5:By the Micro that obtains from MicroChem
1000 DF20 microbedding press molds prepare the sample of the thick film of 20 μ m, and this film holds the wall construction (the wall width is 10 μ m-100 μ m) of various cavity size.Process these films as in Example 1.All films and silicon wafer are well-bonded after removing the pet vector film.All wafers also passes through tape test after 250 ℃ of hard bakings, but some do not pass through after 95 or 150 ℃ of hard bakings.
Embodiment 6:By the tentative Micro that obtains from MicroChem
4500N microbedding press mold prepares the sample of the thick film of 500 μ m, and this film holds the wall construction (the wall width is 25 μ m-1mm) of various cavity size.This film of 60 ℃ of following PEB ' d 2 minutes, develop a few hours by the such of manufacturer recommendation then, in isopropyl alcohol flushing to remove residual developer, dry a whole night at room temperature then.In Optek DPL-24 Differential Pressure laminating machine, do not having under the vacuum under 60 ℃, 10psi, to keep 20sec that the high wall construction of this 500 μ m is affixed on the silicon wafer.Remove the pet vector film and under the identical condition second face of this wall construction is being affixed on 1/8 inch polycarbonate substrate, further attached subsides 4 minutes under 90 ℃, 10psi then.Then on the hot plate 120 ℃ down these combinatorial constructions of heating 60 minutes securely two base materials are bonded on this wall construction.
Though described the present invention above, obviously under the situation that does not break away from the present invention's design disclosed herein, can make many changes, modifications and variations with reference to particular of the present invention.Therefore, the present invention is intended to contain spirit and interior all these changes, the modifications and variations of wide region that belong to appended claims.All patent applications cited herein, patent and other publication are introduced it in full by reference.
Claims (17)
1. on base material, pack the method for microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component, may further comprise the steps:
(a) form the ground floor casting die, it comprises the photoimageable polymer photoresist of first negativity layer that is positioned on first base material;
(b) form second layer casting die, it comprises the photoimageable polymer photoresist of second negativity layer that is positioned on second base material;
(c) this ground floor casting die is exposed in the radiant energy in the first photoimageable polymer photoresist layer, to form the sub-image part;
(d) the ground floor casting die is bonded on the second layer casting die so that this sub-image part contacts with the second photoimageable polymer photoresist layer;
(e) should in conjunction with the part of the first and second photoimageable polymer photoresist layers be exposed in the radiant energy in the photoresist layer of this combination, to form second sub-image; The exposed portion of the described combination of this first and second photoresists layer corresponds respectively to the lid and the wall part of at least one packaging structure of described microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(f) remove second base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (g) will bond so that this film the exposure area is crosslinked before this;
(h) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(i) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(j) face of winning of step (h) is bonded to second of step (i) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(k) first and second from this combination remove first base material.
2. the process of claim 1 wherein before the bonding second layer casting die in step (d) postexposure bake of ground floor casting die and development with step (c).
3. the process of claim 1 wherein with combination first and second further be laminated to the 3rd follow-up laminate (g) or (h) on, make the laminate of multilayer combination.
4. the method for claim 1, the photoimageable polymer photoresist of wherein said first and second negativity comprises the photoimageable resist of negativity, the photoimageable resist of this negativity can be owed to be linked to and allow wall construction to develop under the draw ratio greater than 1:1 to the little level of width 10 μ m, but it be still enough sticking with maintain exposure, PEB, development and dry after the ability that bonds with the 3rd base material subsequently.
5. the process of claim 1 wherein that the photoimageable polymer of described first and second negativity comprises
(A) one or more are according to the bisphenol-A-novolac epoxy resin of general formula I
Wherein each radicals R in the general formula I is independently selected from glycidyl or hydrogen, and the k in the general formula I is the real number of 0-about 30;
(B) be selected from one or more epoxy resin in the group of representing by top Formula B IIa and BIIb, wherein each R in Formula B IIa
1, R
2And R
3Be independently selected from hydrogen or contain the alkyl of 1-4 carbon atom, the numerical value p in Formula B IIa is the real number of 1-30; Numerical value n in Formula B IIb and m are the real number of 1-30 independently, each R in Formula B IIb
4And R
5Be independently selected from hydrogen, contain the alkyl or the trifluoromethyl of 1-4 carbon atom;
(C) one or more cation light initiators or light acid producing agent; With
(D) a little or do not have solvent.
6. the method for claim 5, the photoimageable polymer photoresist of wherein said first and second negativity further comprises the supplementary element that is selected from one or more epoxy resin (E), one or more reactive monomers (F), one or more photosensitizer compounds (G), one or more adhesion promotors (H), organo-aluminum compound (K) and its bond.
7. the process of claim 1 wherein that the photoimageable polymer photoresist of described first and second negativity comprises
(A) one or more are according to the bisphenol-A-novolac epoxy resin of general formula I
Wherein each radicals R in the general formula I is independently selected from glycidyl or hydrogen, and the k in the general formula I is the real number of 0-about 30;
(B) at least a PCL polyol reaction diluent, it has the structure shown in the general formula 2,
General formula 2
R wherein
1Be proprietary aliphatic hydrocarbyl, mean value n=2, or have the structure shown in the general formula 3
General formula 3
R wherein
2Be proprietary aliphatic hydrocarbyl, mean value x=1;
(C) one or more cation light initiators (also claiming light acid producing agent or PAG); (D) a little or do not have solvent.
8. the method for claim 7, the photoimageable polymer photoresist of wherein said first and second negativity further comprises one or more supplementary elements that are selected from reactive monomer component (D), sensitising agent component (E), dye component (F) and rate of dissolution controlling agent (G).
9. the process of claim 1 wherein that described method produces cavity, capping, wall or the passage that covers or surround the device architecture active area.
10. on base material, pack the method for microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component, may further comprise the steps:
(a) cambium layer casting die, it comprises the photoimageable polymer photoresist of the negativity that is positioned on base material layer;
(b) a part that will this photoimageable polymer photoresist layer is exposed in the radiant energy to form sub-image in this photoresist layer; The described exposed portion of this photoresist layer is corresponding to the wall part of at least one packaging structure of described microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluid component;
(c) remove base material from the laminate of this bonding;
The laminate postexposure bake (PEB) that (d) will bond so that this film the exposure area is crosslinked before this;
(e) the tack coat casting die of this postexposure bake is developed with the uncrosslinked part of removing this first and second photoresists layer and stays first of gained, it comprise be positioned at first base material on the corresponding crosslink part of packaging structure;
(f) on the 3rd base material, form second that comprises at least one microelectronics, micromechanics, microelectron-mechanical (MEMS) or microfluidic device;
(g) face of winning of step (e) is bonded to second of step (f) goes up so that each corresponding packaging structure with each device is overlapping and with the 3rd base material formation bond; With
(h) first and second from this combination remove first base material.
11. the method for claim 10, the photoimageable polymer photoresist of wherein said negativity comprises the photoimageable resist of negativity, the photoimageable resist of this negativity can be owed to be linked to and allow wall construction to develop under the draw ratio greater than 1:1 to the little level of width 10 μ m, but it be still enough sticking with maintain exposure, PEB, development and dry after the ability that bonds with the 3rd base material subsequently.
12. the method for claim 10, the photoimageable polymer photoresist of wherein said negativity comprises
(A) one or more are according to the bisphenol-A-novolac epoxy resin of general formula I
Wherein each radicals R in the general formula I is independently selected from glycidyl or hydrogen, and the k in the general formula I is the real number of 0-about 30;
(B) be selected from one or more epoxy resin in the group of representing by top Formula B IIa and BIIb, wherein each R in Formula B IIa
1, R
2And R
3Be independently selected from hydrogen or contain the alkyl of 1-4 carbon atom, the numerical value p in Formula B IIa is the real number of 1-30; Numerical value n in Formula B IIb and m are the real number of 1-30 independently, each R in Formula B IIb
4And R
5Be independently selected from hydrogen, contain the alkyl or the trifluoromethyl of 1-4 carbon atom;
(C) one or more cation light initiators or light acid producing agent; With
(D) a little or do not have solvent.
13. the method for claim 12, the photoimageable polymer photoresist of wherein said negativity further comprises the supplementary element that is selected from one or more epoxy resin (E), one or more reactive monomers (F), one or more photosensitizer compounds (G), one or more adhesion promotors (H), organo-aluminum compound (K) and its bond.
14. the process of claim 1 wherein that the photoimageable polymer photoresist of described negativity comprises
(A) one or more are according to the bisphenol-A-novolac epoxy resin of general formula I
Wherein each radicals R in the general formula I is independently selected from glycidyl or hydrogen, and the k in the general formula I is the real number of 0-about 30;
(B) at least a PCL polyol reaction diluent, it has the structure shown in the general formula 2,
General formula 2
R wherein
1Be proprietary aliphatic hydrocarbyl, mean value n=2, or have the structure shown in the general formula 3
General formula 3
R wherein
2Be proprietary aliphatic hydrocarbyl, mean value x=1;
(C) one or more cation light initiators (also claiming light acid producing agent or PAG); With
(D) a little or do not have solvent.
15. the method for claim 14, the photoimageable polymer photoresist of wherein said negativity also comprises one or more supplementary elements that are selected from reactive monomer component (D), sensitising agent component (E), dye component (F) and rate of dissolution controlling agent (G).
16. the method for claim 10, wherein said method produces parietal layer.
17. the method for claim 10 also comprises the described second layer on described the 3rd base material is bonded to step on the 4th base material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78407106P | 2006-03-17 | 2006-03-17 | |
| US60/784,071 | 2006-03-17 | ||
| US11/716,771 | 2007-03-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101421826A true CN101421826A (en) | 2009-04-29 |
Family
ID=40631523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800126953A Pending CN101421826A (en) | 2006-03-17 | 2007-03-14 | Packaging of mems devices |
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| CN (1) | CN101421826A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339764A (en) * | 2011-06-04 | 2012-02-01 | 湖北东光电子股份有限公司 | Thick-film hybrid integrated circuit surface enveloping process |
| CN105600738A (en) * | 2015-10-09 | 2016-05-25 | 锐迪科微电子（上海）有限公司 | Airtight structure for wafer level encapsulation and manufacturing method thereof |
| CN106542494A (en) * | 2016-09-26 | 2017-03-29 | 西北工业大学 | A kind of method for preparing the not contour micro-nano structure of multilamellar |
| CN107078075A (en) * | 2014-11-05 | 2017-08-18 | Ev 集团 E·索尔纳有限责任公司 | Method and apparatus for carrying out coating to product substrate |
| CN111792618A (en) * | 2020-06-29 | 2020-10-20 | 中国人民解放军军事科学院国防科技创新研究院 | Micro thermal array based on heterogeneous driving unit and preparation method thereof |
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2007
- 2007-03-14 CN CNA2007800126953A patent/CN101421826A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339764A (en) * | 2011-06-04 | 2012-02-01 | 湖北东光电子股份有限公司 | Thick-film hybrid integrated circuit surface enveloping process |
| CN102339764B (en) * | 2011-06-04 | 2013-03-20 | 湖北东光电子股份有限公司 | Thick-film hybrid integrated circuit surface enveloping process |
| CN107078075A (en) * | 2014-11-05 | 2017-08-18 | Ev 集团 E·索尔纳有限责任公司 | Method and apparatus for carrying out coating to product substrate |
| CN105600738A (en) * | 2015-10-09 | 2016-05-25 | 锐迪科微电子（上海）有限公司 | Airtight structure for wafer level encapsulation and manufacturing method thereof |
| CN106542494A (en) * | 2016-09-26 | 2017-03-29 | 西北工业大学 | A kind of method for preparing the not contour micro-nano structure of multilamellar |
| CN106542494B (en) * | 2016-09-26 | 2017-12-26 | 西北工业大学 | A kind of method for preparing the not contour micro-nano structure of multilayer |
| CN111792618A (en) * | 2020-06-29 | 2020-10-20 | 中国人民解放军军事科学院国防科技创新研究院 | Micro thermal array based on heterogeneous driving unit and preparation method thereof |
| CN111792618B (en) * | 2020-06-29 | 2024-01-09 | 中国人民解放军军事科学院国防科技创新研究院 | Micro thermal array based on heterogeneous driving unit and preparation method thereof |
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