CN101414555B - 闪存浮栅制造方法 - Google Patents
闪存浮栅制造方法 Download PDFInfo
- Publication number
- CN101414555B CN101414555B CN2007100941467A CN200710094146A CN101414555B CN 101414555 B CN101414555 B CN 101414555B CN 2007100941467 A CN2007100941467 A CN 2007100941467A CN 200710094146 A CN200710094146 A CN 200710094146A CN 101414555 B CN101414555 B CN 101414555B
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- Prior art keywords
- floating gate
- polysilicon
- flash memory
- silicon dioxide
- bowl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 238000001259 photo etching Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- -1 phosphonium ion Chemical class 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000001154 acute effect Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2007100941467A CN101414555B (zh) | 2007-10-16 | 2007-10-16 | 闪存浮栅制造方法 |
Applications Claiming Priority (1)
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CN2007100941467A CN101414555B (zh) | 2007-10-16 | 2007-10-16 | 闪存浮栅制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101414555A CN101414555A (zh) | 2009-04-22 |
CN101414555B true CN101414555B (zh) | 2011-12-14 |
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CN2007100941467A Active CN101414555B (zh) | 2007-10-16 | 2007-10-16 | 闪存浮栅制造方法 |
Country Status (1)
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CN (1) | CN101414555B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101923296B (zh) * | 2009-06-17 | 2011-12-14 | 上海华虹Nec电子有限公司 | Nvm器件制备中光刻对准记号的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045488A (en) * | 1990-01-22 | 1991-09-03 | Silicon Storage Technology, Inc. | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device |
CN1841783A (zh) * | 2005-03-07 | 2006-10-04 | 三星电子株式会社 | ***栅极存储单元及制造其阵列的方法 |
CN1945798A (zh) * | 2005-08-17 | 2007-04-11 | 三星电子株式会社 | 制造非易失性存储器件的方法 |
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2007
- 2007-10-16 CN CN2007100941467A patent/CN101414555B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045488A (en) * | 1990-01-22 | 1991-09-03 | Silicon Storage Technology, Inc. | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device |
CN1841783A (zh) * | 2005-03-07 | 2006-10-04 | 三星电子株式会社 | ***栅极存储单元及制造其阵列的方法 |
CN1945798A (zh) * | 2005-08-17 | 2007-04-11 | 三星电子株式会社 | 制造非易失性存储器件的方法 |
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Publication number | Publication date |
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CN101414555A (zh) | 2009-04-22 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |