CN101409304B - Organic electro-luminescent display device - Google Patents
Organic electro-luminescent display device Download PDFInfo
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- CN101409304B CN101409304B CN2008101685956A CN200810168595A CN101409304B CN 101409304 B CN101409304 B CN 101409304B CN 2008101685956 A CN2008101685956 A CN 2008101685956A CN 200810168595 A CN200810168595 A CN 200810168595A CN 101409304 B CN101409304 B CN 101409304B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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Abstract
Pixels each of which is sandwiched between an upper electrode and a lower electrode are arranged in a matrix array to form a display region. An auxiliary electrode extends in the lateral direction between the pixels and the pixels for preventing a voltage drop of the upper electrode. A current supply line which supplies an electric current to the upper electrode and the auxiliary electrodes are made conductive with each other by forming a through hole in an insulation layer. To ensure reliability of connection at the through hole, a contact electrode made of metal which overlaps with the auxiliary electrode is formed on the through hole by vapor deposition. The top-emission-type organic EL display device which exhibits uniform screen brightness is realized by preventing a voltage drop of an upper electrode formed of a transparent conductive film.
Description
Technical field
The present invention relates to organic EL display, relate in particular to top light emitting (top emission) the type organic EL display that improves brightness uniformity and improve reliability.
Background technology
Organic EL display has to be made the bottom-emission type that the light that takes place from organic EL layer penetrates to the glass substrate direction that is formed with organic EL layer etc. and makes it to the top emission type that penetrates with the opposite direction of glass that is formed with organic EL layer etc.Top emission type can obtain the area of bigger organic EL layer, therefore has the advantage that can improve display brightness.
In organic EL display, the clamping organic EL layer applies certain voltage to upper electrode between lower electrode and upper electrode, and lower electrode is applied voltage data signal, controls the luminous of organic EL layer, forms image thus.Supplying with voltage data signal to lower electrode carries out via thin-film transistor (TFT).In the top emission type organic EL display, also can on this TFT etc., form organic EL layer, therefore can increase light-emitting area.
The top emission type organic EL display penetrates light to upper electrode one side, and it is transparent therefore needing upper electrode.Generally use ITO (Indium Tin Oxide) or the IZO (Indium Zinc Oxide) etc. of metal conductive oxide film as transparency electrode.But the resistance ratio metal of ITO or IZO etc. is high.Therefore, when apart from the distance of the portion of terminal of supplying electric current when big, near the upper electrode current potential the portion of terminal and dissimilate away from the current potential of the upper electrode of portion of terminal.This will cause occurring brightness irregularities, thereby make deterioration of image quality.
Record following content in " patent documentation 1 " and " patent documentation 2 ": in the top emission type organic EL display, therefore the current potential that suppresses upper electrode for the resistance that utilizes upper electrode forms auxiliary electrode because of the different phenomenon in position.
Patent documentation 1: TOHKEMY 2002-318556 communique
Patent documentation 2: TOHKEMY 2001-230086 communique
Summary of the invention
The technology of record is under the dike that forms between pixel and the pixel (bank), to utilize the less metal of resistance to form auxiliary wiring in " patent documentation 1 ".And shape through hole (through-hole) is electrically connected upper electrode and auxiliary wiring on dike.The resistance of auxiliary wiring is less, even therefore in the pixel away from portion of terminal, also can suppress the reduction of upper electrode current potential.But, in this technology, when under dike, forming auxiliary wiring, need the graphical of auxiliary wiring.The photoetching that graphically utilizes of auxiliary wiring is carried out, so cost can increase.The connection of the throughhole portions that on dike, forms in addition, is only undertaken by upper electrode.The through hole that on dike, forms is darker, so the reliability of the conducting of through-hole section also has problems.
In the technology of in " patent documentation 2 ", putting down in writing; Record following content: with upper electrode be divided into according to be formed on the organic EL layer the upper electrode as literal and from the wiring portion (auxiliary electrode) of portion of terminal to the upper electrode supplying electric current, utilize the lower metal of resistance to form wiring portion.In this technology, also need the graphical of auxiliary wiring.Graphically carrying out of auxiliary wiring through photoetching, so cost can increase.In addition, in " patent documentation 2 " open, between pixel and pixel, do not form dike, but it is identical with " patent documentation 1 " to form the situation of dike, can produce the problem of the conducting of through-hole section.
The present invention is in the organic EL display of top emission type; The voltage upper electrode that causes descends in order to prevent big by the resistance of upper electrode; Using under the situation of auxiliary electrode, realizing suppressing the structure of reliability that manufacturing cost rises and guarantees the conducting of through-hole section.
The present invention addresses the above problem to accomplish.For the voltage that suppresses upper electrode descends, through vapor deposition or sputter on the upper electrode or form auxiliary electrode under the upper electrode.To the upper electrode supplying electric current, carrying out electric current supplying wire and being connected of auxiliary electrode with what identical with drain electrode wiring layer formed via the through hole that is formed on the dielectric film.For the phenomenon that the bad connection that suppresses this through hole or resistance increase,, come and the overlapping contact electrode that forms by metal that adheres to of auxiliary electrode through mask evaporation or sputter in through-hole section.Particularly, scheme is following.
(1) a kind of organic EL display; Having pixel is rectangular and viewing area that form; This pixel has the organic EL layer by upper electrode and lower electrode clamping, it is characterized in that: above-mentioned upper electrode is formed by transparency electrode, between above-mentioned pixel and above-mentioned pixel; Auxiliary electrode horizontal expansion with above-mentioned upper electrode conducting; Above-mentioned auxiliary electrode is via being formed on the through hole on the insulating barrier and be connected with electric current supplying wire to above-mentioned upper electrode supplying electric current, and is in above-mentioned through hole, overlapping and be formed with contact electrode with above-mentioned auxiliary electrode.
(2) according to (1) described organic EL display, it is characterized in that: above-mentioned contact electrode is formed by metal, and its thickness is greater than the thickness of above-mentioned auxiliary electrode.
(3) according to (1) described organic EL display, it is characterized in that: above-mentioned auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
(4) according to (1) described organic EL display, it is characterized in that: above-mentioned contact electrode forms to such an extent that more lean on last than above-mentioned auxiliary electrode.
(5) according to (1) described organic EL display, it is characterized in that: above-mentioned contact electrode and above-mentioned auxiliary electrode are formed by same material.
(6) according to (1) described organic EL display, it is characterized in that: above-mentioned auxiliary electrode is formed on the above-mentioned upper electrode.
(7) according to (1) described organic EL display, it is characterized in that: above-mentioned auxiliary electrode is formed under the above-mentioned upper electrode.
(8) a kind of organic EL display; Have pixel and be rectangular and viewing area that form, this pixel has the organic EL layer by upper electrode and lower electrode clamping, it is characterized in that: above-mentioned upper electrode is formed by transparency electrode; Between above-mentioned pixel and above-mentioned pixel; With the auxiliary electrode horizontal expansion of above-mentioned upper electrode conducting, above-mentioned auxiliary electrode outside above-mentioned viewing area via being formed on the through hole on the insulating barrier and be connected, in above-mentioned through hole with electric current supplying wire to above-mentioned upper electrode supplying electric current; Overlapping and be formed with contact electrode with above-mentioned auxiliary electrode, above-mentioned contact electrode is shared and cover a plurality of above-mentioned through holes.
(9) according to (8) described organic EL display, it is characterized in that: auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
(10) a kind of organic EL display has pixel and is rectangular and viewing area that form, and this pixel has the organic EL layer by upper electrode and lower electrode clamping; It is characterized in that: above-mentioned upper electrode is formed by transparency electrode; Between above-mentioned pixel and above-mentioned pixel, with the auxiliary electrode horizontal expansion of above-mentioned upper electrode conducting, above-mentioned auxiliary electrode is in above-mentioned viewing area; Between above-mentioned pixel and above-mentioned pixel; Via being formed on the through hole on the insulating barrier and be connected,, overlapping and be formed with contact electrode with above-mentioned auxiliary electrode in above-mentioned through hole with electric current supplying wire to above-mentioned upper electrode supplying electric current.
(11) according to (10) described organic EL display, it is characterized in that: the width of above-mentioned contact electrode is greater than the width of above-mentioned auxiliary electrode.
(12) according to (10) described organic EL display, it is characterized in that: between above-mentioned pixel and above-mentioned pixel, be formed with dike, above-mentioned auxiliary electrode is formed on the above-mentioned dike, and above-mentioned through hole connects dike and forms with other insulating barriers.
(13) according to (10) described organic EL display, it is characterized in that: auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
According to the present invention, form auxiliary electrode through mask evaporation or mask sputter, so the formation of auxiliary electrode do not need photo-mask process, amplitude increases cost ground formation auxiliary electrode.
In addition, via being formed on the through hole on the dielectric film and be connected with auxiliary electrode with electric current supplying wire to the upper electrode supplying electric current, but this through hole is generally very dark, is easy to generate poor flow.In the present invention, in the through hole, not only to carry out and being connected of electric current supplying wire with auxiliary electrode, but overlapping and form contact electrode with auxiliary electrode, therefore can prevent the poor flow of contact site.
Like this, according to the present invention, the current potential that can suppress upper electrode is because of the different phenomenons in position, and then can improve the conducting reliability of electric current supplying wire and upper electrode.Therefore, can realize the excellent in uniformity and the high top emission type organic EL display of reliability of picture brightness.
Description of drawings
Fig. 1 is the vertical view of viewing area of the organic EL display of embodiment 1.
Fig. 2 is the A-A cutaway view of Fig. 1.
Fig. 3 is the peripheral vertical view in viewing area of the organic EL display of embodiment 1.
Fig. 4 is the vertical view of the through-hole section of embodiment 1.
Fig. 5 is other modes of A-A cutaway view of Fig. 1 of embodiment 1.
Fig. 6 is the cutaway view of the dot structure of embodiment 2.
Fig. 7 is the cutaway view of the through-hole section of embodiment 2.
Fig. 8 is the vertical view of viewing area of the organic EL display of embodiment 3.
Fig. 9 is the cutaway view of the through-hole section of embodiment 3.
Embodiment
Below, detailed content of the present invention is disclosed according to embodiment.
[embodiment 1]
Fig. 1 is the vertical view of the viewing area of top emission type organic EL display of the present invention.Fig. 2 is the A-A cutaway view of Fig. 1.In Fig. 1, be arranged with red pixel 101, green pixel 102, blue pixel 103 in the horizontal.Be arranged with the pixel of same color in the vertical.Each pixel has the organic EL layer 22 that sends colors such as red, green, blue respectively.Be used as on each organic EL layer 22 upper electrode 23 transparency electrode, be that IZO covers.In addition, also can use ITO as transparency electrode.
Longitudinally between pixel and the pixel, auxiliary electrode 30 extends in the horizontal.This auxiliary electrode 30 forms through mask evaporation on the upper electrode 23 that forms continuously.In the present invention, auxiliary electrode 30 is to form through vapor deposition or the sputter of using mask, therefore need not be used for the photo-mask process of auxiliary electrode 30, and is favourable to reducing cost.Be about 25 μ m～30 μ m longitudinally between pixel and the pixel.Therefore, the width of auxiliary electrode 30 forms 10 μ m～15 μ m less than this width.The vapor deposition of the width of this degree can utilize mask evaporation or sputter.
The film resistor (sheet resistance) of the viewing area after forming auxiliary wiring is that 10 Ω/when was following, the current potential that can suppress upper electrode 23 was because of the different phenomenon in position.The film resistor of this moment is called the film resistor that comprises under auxiliary electrode 30 and upper electrode 23 situation.Promptly compare with the situation of upper electrode 23 only, film resistor diminishes significantly.
Fig. 2 is the A-A cutaway view of Fig. 1.In Fig. 2, on the device substrate that forms by glass 10, be formed with bottom gate thin film transistor (TFT).Fig. 2 is bottom gate type TFT, but as illustrated later, also can be top gate type TFT.
In Fig. 2, on source electrode substrate 10, be formed with gate electrode 15.Covering grid electrode 15 is formed with gate insulating film 14 by SiN.On gate electrode 15, be formed with semiconductor layer 13.This semiconductor layer 13 forms the groove of TFT.Active electrode or drain electrode (SD electrode 17) are set on semiconductor layer 13, but, are formed with not shown n+Si layer in order between semiconductor layer 13 and SD electrode 17, to keep ohmic contact.
Through channel-etch, after the part of the n+Si layer of groove and semiconductor layer 13 is carried out etching, adhere to organic passivation (passivation) film 19.In Fig. 2, passivating film is merely organic passivation film 19, but also under organic passivation film 19, forms inorganic passivating film 18 such as SiN sometimes.Organic passivation film 19 also has the effect as planarization film, therefore forms about 1～4 μ m than heavy back.
The reflecting electrode 24 of Al or Al alloy is formed on the organic passivation film 19.Therefore the present invention is the top emission type organic EL display, must make from the light of organic EL layer 22 on the direction opposite with device substrate 10, to penetrate, so need on organic passivation film 19, form reflecting electrode 24.On organic passivation film 19, form the SD electrode 17 that through hole comes conducting reflecting electrode 24 and TFT.
On lower electrode 21, form the organic EL layer 22 that light takes place.Organic EL layer 22 generally is made up of for 5 layers hole injection layer, hole transport layer, luminescent layer, electron transport layer, electron injecting layer etc.Each layer of organic EL layer 22 is extremely thin, and different because of glow color, hole transport layer is 120nm～250nm, and luminescent layer is 30nm～40nm, and electron transport layer is about 10nm, and electron injecting layer is about 60nm.Like this, though organic EL layer overlapping 5 layers also extremely thin, therefore when there is step difference in substrate, can cause the step disconnection of film.
For the step that prevents organic EL layer 22 breaks off, between each pixel, be formed with dike 20.Dike 20 generally by forming as the acrylic acid of organic membrane or polyimides etc., prevents that organic EL layer 22 is damaged because of step difference in the end.
On organic EL layer 22, be attached with IZO as nesa coating as upper electrode 23.IZO is attached on the whole display part that comprises on the dike 20 through vapor deposition.Light from organic EL layer 22 penetrates to the outside through the IZO as upper electrode 23, and the light transmission of IZO is increased.So, can not increase the thickness of IZO, the thickness of IZO is about 30nm.Therefore, the film resistor of IZO is higher, causes that the voltage of upper electrode 23 descends, and the current potential that causes upper electrode is because of the different phenomenon in position.
For the voltage that prevents this upper electrode 23 descends, on dike 20, be formed with auxiliary electrode 30.This is because so long as on dike 20, auxiliary electrode just can not hinder the light from organic EL layer 22 to penetrate.Auxiliary electrode 30 forms strip in the horizontal by the lower metal of resistance, and this is as illustrated in fig. 1.The thickness of auxiliary electrode 30 is about 150nm, forms thicklyer than upper electrode 23.In addition, auxiliary electrode 30 is formed by metal, so resistivity is far smaller than the upper electrode 23 that is formed by metal oxide.Therefore, through using auxiliary electrode 30, can prevent that the voltage of upper electrode 23 from descending.
In the present embodiment, not only form auxiliary electrode 30, also form contact electrode 40, thereby improve the reliability of this through-hole section through other vapor deposition or sputter at contact site.Fig. 4 is the A-A cutaway view of Fig. 3.In Fig. 4, on device substrate 10, be formed with gate insulating film 14.On gate insulating film 14, be formed with electric current supplying wire 175.Electric current supplying wire 175 is at the layer identical with SD electrode 17, and forms simultaneously.
On electric current supplying wire 175, form organic passivation film 19, on organic passivation film 19, be formed for connecting the through hole of auxiliary electrode 30 and electric current supplying wire 175.Cover this through hole and at first vapor deposition as the IZO of upper electrode 23.And, vapor deposition or sputter auxiliary electrode 30 on upper electrode 23.
But the thickness of upper electrode 23 is about 30nm, and the thickness of auxiliary electrode 30 is about 150nm.And the thickness of organic passivation film 19 is 1 μ m～4 μ m, in most cases is about 3 μ m, and is very thick.
Therefore, formed through hole is very dark, so produce the fully situation of conducting such as upper electrode 23 or auxiliary electrode 30 generation step disconnections.Particularly at contact site, to a plurality of pixel supplying electric currents, the electric current that therefore flows through is bigger, when resistance becomes big, is easy to generate reliability problems in through-hole section.
In the present invention, in order to solve such problem, that kind as shown in Figure 4 in contact hole portion, is also adhered to the contact electrode 40 that is formed by metal on auxiliary electrode 30.Contact electrode 40 adheres to thicklyer than auxiliary electrode 30, in addition, near through hole, also forms greatlyyer than auxiliary electrode 30 on the plane.The material of contact electrode 40 is identical with the material of auxiliary electrode 30, is waited and is formed and can simplify working process by Al or Al alloy, Zn, Mg.But also can be other metals.
As present embodiment,, also has the advantage that freely to select the shape of contact site through forming contact electrode 40 in addition at contact site.For example, the auxiliary wiring of viewing area has restriction on width, therefore can not make the extreme change of thickness big.But the thickness of the contact electrode 40 of present embodiment can change according to the requirement of reliability.In addition, can increase the figure of contact electrode 40, so the flat shape of contact electrode 40 can freely be set also according to the requirement of display unit.
Fig. 3 and Fig. 4 are in contact site, and contact electrode more leans on than auxiliary electrode and adheres to lastly, but opposite, auxiliary electrode also can be than contact electrode more by adhering to down.This after also be same among the embodiment that states 2 and the embodiment 3.
Fig. 5 is on the dike 20 to be the example that IZO on form auxiliary wiring as upper electrode 23 through vapor deposition or sputter and being attached to.Present embodiment is not limited thereto, and is as shown in Figure 5, can at first on dike 20, form auxiliary electrode 30 through vapor deposition, and vapor deposition is as the IZO of upper electrode 23 above that.In the present embodiment, all form auxiliary electrode 30, upper electrode 23, do not use photoetching with vapor deposition, therefore at first form auxiliary electrode 30, upper electrode 23 which is all no problem.The situation of upside that other structure and auxiliary electrode 30 are positioned at upper electrode 23 is identical.
[embodiment 2]
The present invention is in the top emission type organic EL display, and no matter organic EL layer 22 is the top anode type, or the top cathode type, and in addition, no matter TFT is bottom gate type, or top gate type can both be suitable for.Present embodiment is TFT to be taken as top gate type, organic EL layer 22 to be taken as the example of using situation of the present invention under the situation of top anode type.Fig. 6 is the cutaway view of the pixel portions of present embodiment.Fig. 6 is equivalent to the B-B cutaway view of Fig. 1.
In Fig. 6, on device substrate 10, be formed with first basilar memebrane 11 that constitutes by SiN and second basilar memebrane 12 that constitutes by SiO2.This is in order to prevent the contaminating impurity semiconductor layer 13 from glass substrate.Be formed with semiconductor layer 13 on second basilar memebrane 12.After semiconductor layer 13 forms the a-Si film by CVD, be transformed to the poly-Si film by laser radiation.
Covering grid electrode 15 and form interlayer dielectric 16 by SiO2.This is for grid wiring or gate electrode 15 are insulated with drain electrode wiring 171.On interlayer dielectric 16, be formed with drain electrode wiring 171.Drain electrode wiring 171 is connected with the drain electrode of semiconductor layer 13 via the through hole that in interlayer dielectric 16 and gate insulating film 14, forms.
Then, adhere to the inorganic passivating film 18 that constitutes by SiN in order to protect TFT.On inorganic passivating film 18, form organic passivation film 19.Organic passivation film 19 together has the effect of protecting TFT more fully with inorganic passivating film 18, and has the smooth effect of face that is formed with organic EL layer 22 that makes.Therefore, organic passivation film 19 is 1～4 μ m, forms thicklyer.
On organic passivation film 19, form reflecting electrode 24 by Al or Al alloy.The reflectivity of Al or Al alloy is higher, therefore is suitable as reflecting electrode 24.Reflecting electrode 24 is via being formed on the through hole on organic passivation film 19 and the inorganic passivating film 18 and be connected with drain electrode wiring 171.
Present embodiment is a top anode type organic EL display, so the lower electrode 21 of organic EL layer 22 is a negative electrode.Therefore, Al that uses as reflecting electrode 24 or Al alloy can dual-purpose organic EL layer 22 lower electrode 21.The work function of Al or Al alloy is smaller, therefore can play a role as anode.
On lower electrode 21, form organic EL layer 22.At this moment, the order of organic EL layer 22 is different with the situation of embodiment 1.That is, be followed successively by electron injecting layer, electron transport layer, luminescent layer, hole transport layer, hole injection layer since next time.On organic EL layer 22, become the upper electrode 23 of anode.Under the situation of top negative electrode, also can use IZO as upper electrode 23.In the viewing area, IZO does not use mask and by vapor deposition in the viewing area on the whole.In order to keep the optical transmission rate, the thickness of IZO forms about 30nm, and this is identical with embodiment 1.
Damaged because of the step disconnection in order to prevent organic EL layer 22 in the end, between pixel and pixel, form dike 20, this is identical with embodiment 1.In addition, also the Fig. 1 with embodiment 1 is identical for the planar structure of pixel.The auxiliary electrode 30 of present embodiment can be formed on the dike 20, on the upper electrode 23 or in any one under the upper electrode 23, this is identical with Fig. 2 and Fig. 5.
In addition, the lateral outer side in the viewing area forms also identical with Fig. 3 with the contact site of electric current supplying wire 175.Fig. 7 is the cutaway view of the contact site of present embodiment.Fig. 7 is corresponding to the A-A section of Fig. 3.In Fig. 7, on device substrate 10, be formed with first basilar memebrane 11, second basilar memebrane 12.Be formed with gate insulating film 14 and interlayer dielectric 16 above that.The effect of each layer, material are like that kind illustrated in fig. 6.
On interlayer dielectric 16, exist electric current supplying wire 175.Electric current supplying wire 175 forms at the layer identical with drain line simultaneously.Cover electric current supplying wire 175 and form inorganic passivating film 18, further form organic passivation film 19.On organic passivation film 19, be extended with auxiliary electrode 30.In the present embodiment, the acrylic resin or the polyimide resin that form dike are removed in the outside in the viewing area.
In order to connect auxiliary electrode 30 and electric current supplying wire 175, on organic passivation film 19 and inorganic passivating film 18, be formed with through hole.Cover this through hole, at first vapor deposition forms the IZO of upper electrode, adheres to auxiliary electrode 30 through vapor deposition or sputter then, and connects upper electrode 23 and electric current supplying wire 175.In through-hole section,, cover auxiliary electrode 30 and form contact electrode 40 in through-hole section in order to connect more reliably.Contact electrode 40 forms through mask evaporation or sputter, and this is identical with embodiment 1.
[embodiment 3]
In Fig. 8, pixel arrangement is identical with Fig. 1.In addition, auxiliary electrode 30 transversely extends also identical with Fig. 1 at picture.In Fig. 8, it is different with Fig. 1 with contacting of electric current supply wiring that auxiliary electrode 30 is set in the viewing area.In Fig. 8, contact site is arranged on the centre position of pixel and pixel.This is because the space that is easy to obtain to be used for through hole is sent out by this one.In addition, this through hole is formed on the dike 20.
In Fig. 8, contact site forms to whole auxiliary electrodes 30 in the vertical, forms by per 5 pixels in the horizontal.Which kind of degree the formation cycle of contact site can allow decide by the potential difference of picture size etc. and upper electrode 23 to get final product.Make the width of the width of contact site greater than auxiliary electrode 30.This is in order to do one's utmost to suppress the resistance increase of through-hole section.In addition, and the width contact electrode 40 that form overlapping at conducting portion and auxiliary electrode forms greater than the width of the auxiliary electrode 30 of the position beyond through hole.
Fig. 9 is the A-A cutaway view of Fig. 8.Cutaway view shown in Figure 9 is the cutaway view that is equivalent to the situation that is formed with top gate type TFT of Fig. 6.That is, on the device substrate that forms by glass 10, be formed with first basilar memebrane 11, second basilar memebrane 12, gate insulating film 14, interlayer dielectric 16, be formed with electric current supplying wire 175 above that.Cover electric current supplying wire 175 and be formed with inorganic passivating film 18 and organic passivation film 19.In addition, because auxiliary wiring is formed on the dike 20, therefore in Fig. 9, on organic passivation film 19, form dike 20.
Form through hole through dike 20, organic passivation film 19 and passivating film.This is in order to connect auxiliary wiring and electric current supplying wire 175.In the present embodiment, on dike 20, form through hole, so this through hole is very dark.That is, dike 20 is about 2 μ m under with organic film formed situation, and organic passivation film 19 is about 3 μ m, and inorganic passivating film 18 is about 0.4 μ m, therefore add up to 5.4 microns thickness, so the degree of depth of through hole is 5.4 μ m.No matter whether need form dark like this through hole, owing on dike 20, form through hole, so the profile of through hole has restriction.Like this, the taper theta of through hole becomes big.When the tapering of through hole is big, produce the step disconnection of conducting film easily in through-hole section.
In Fig. 9, cover through hole and adhere to upper electrode 23.Therefore the thickness of upper electrode 23 is about 30nm, in dark like this through hole, causes that easily step breaks off and becomes poor flow.Auxiliary electrode 30 covers upper electrode 23 and is formed in the through hole.The thickness of auxiliary electrode 30 is 150nm.But, in the through hole of the degree of depth of the thickness of this degree and 5.4 μ m big, obtain conducting and also be not easy at bevel angle θ.Therefore, there is the problem on the reliability in the conducting that only obtains through-hole section with auxiliary electrode 30.
The present invention is as shown in Figure 9, covers auxiliary electrode 30 and forms the contact electrode 40 thicker than auxiliary electrode 30 in through-hole section.Contact electrode 40 is formed by metal, for example can use Al or Al alloy, Zn, Mg etc. and auxiliary electrode 30 identical materials.Like this, in the present embodiment, utilize metal to form contact electrode 40, can stablize the conducting resistance of through hole than heavy back at contact site.In the present embodiment,, and, therefore compare, can further make the current potential homogenizing of upper electrode 23 with the situation of embodiment 1 through 30 pairs of viewing area supplying electric currents of auxiliary electrode through 175 pairs of upper electrode 23 supplying electric currents of electric current supplying wire.In addition, in contact site, can utilize contact electrode 40 to stablize through hole resistance, therefore, can further make the picture brightness homogenizing, and improve reliability.
Claims (13)
1. an organic EL display has pixel and is rectangular and viewing area that form, and wherein pixel has the organic EL layer by upper electrode and lower electrode clamping, it is characterized in that:
Above-mentioned upper electrode is formed by transparency electrode; Between above-mentioned pixel and above-mentioned pixel; With the auxiliary electrode horizontal expansion of above-mentioned upper electrode conducting, above-mentioned auxiliary electrode is via being formed on the through hole on the insulating barrier and be connected with electric current supplying wire to above-mentioned upper electrode supplying electric current
In above-mentioned through hole, overlapping and be formed with contact electrode with above-mentioned auxiliary electrode.
2. organic EL display according to claim 1 is characterized in that:
Above-mentioned contact electrode is formed by metal, and its thickness is greater than above-mentioned auxiliary electrode.
3. organic EL display according to claim 1 is characterized in that:
Above-mentioned auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
4. organic EL display according to claim 1 is characterized in that:
Above-mentioned contact electrode forms to such an extent that more lean on last than above-mentioned auxiliary electrode.
5. organic EL display according to claim 1 is characterized in that:
Above-mentioned contact electrode and above-mentioned auxiliary electrode are formed by same material.
6. organic EL display according to claim 1 is characterized in that:
Above-mentioned auxiliary electrode is formed on the above-mentioned upper electrode.
7. organic EL display according to claim 1 is characterized in that:
Above-mentioned auxiliary electrode is formed under the above-mentioned upper electrode.
8. an organic EL display has pixel and is rectangular and viewing area that form, and wherein pixel has the organic EL layer by upper electrode and lower electrode clamping, it is characterized in that:
Above-mentioned upper electrode is formed by transparency electrode; Between above-mentioned pixel and above-mentioned pixel; Auxiliary electrode horizontal expansion with above-mentioned upper electrode conducting; Above-mentioned auxiliary electrode outside above-mentioned viewing area via being formed on the through hole on the insulating barrier and be connected with electric current supplying wire to above-mentioned upper electrode supplying electric current
In above-mentioned through hole, overlapping and be formed with contact electrode with above-mentioned auxiliary electrode, above-mentioned contact electrode is shared and be covered with a plurality of above-mentioned through holes.
9. organic EL display according to claim 8 is characterized in that:
Above-mentioned auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
10. an organic EL display has pixel and is rectangular and viewing area that form, and wherein pixel has the organic EL layer by upper electrode and lower electrode clamping, it is characterized in that:
Above-mentioned upper electrode is formed by transparency electrode; Between above-mentioned pixel and above-mentioned pixel; With the auxiliary electrode horizontal expansion of above-mentioned upper electrode conducting, above-mentioned auxiliary electrode is in above-mentioned viewing area, between above-mentioned pixel and above-mentioned pixel; Via being formed on the through hole on the insulating barrier and be connected with electric current supplying wire to above-mentioned upper electrode supplying electric current
In above-mentioned through hole, overlapping and be formed with contact electrode with above-mentioned auxiliary electrode.
11. organic EL display according to claim 10 is characterized in that:
The width of above-mentioned contact electrode is greater than the width of above-mentioned auxiliary electrode.
12. organic EL display according to claim 10 is characterized in that:
Between above-mentioned pixel and above-mentioned pixel, be formed with dike, above-mentioned auxiliary electrode is formed on the dike, and above-mentioned through hole connects dike and forms with other insulating barriers.
13. organic EL display according to claim 10 is characterized in that:
Above-mentioned auxiliary electrode forms through mask evaporation or mask sputter, and above-mentioned contact electrode forms through mask evaporation or mask sputter.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007264503 | 2007-10-10 | ||
| JP2007-264503 | 2007-10-10 | ||
| JP2007264503A JP5443679B2 (en) | 2007-10-10 | 2007-10-10 | Organic EL display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101409304A CN101409304A (en) | 2009-04-15 |
| CN101409304B true CN101409304B (en) | 2012-07-04 |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5662351B2 (en) * | 2009-02-05 | 2015-01-28 | コーニンクレッカ フィリップス エヌ ヴェ | Sealed electroluminescent device |
| KR101084171B1 (en) * | 2009-08-10 | 2011-11-17 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
| CN102474939B (en) * | 2009-11-04 | 2015-03-04 | 松下电器产业株式会社 | Display panel apparatus and method of fabricating display panel apparatus |
| EP2333863A1 (en) | 2009-12-11 | 2011-06-15 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Electro-optical device, electrode therefore, and method and apparatus of manufacturing an electrode and the electro-optical device provided therewith |
| KR101928407B1 (en) | 2011-12-09 | 2018-12-13 | 엘지디스플레이 주식회사 | Organic electro-luminescence display and manufacturing method thereof |
| JP2015180979A (en) * | 2012-07-31 | 2015-10-15 | シャープ株式会社 | Touch panel and manufacturing method of touch panel |
| KR101407590B1 (en) * | 2012-11-19 | 2014-06-13 | 삼성디스플레이 주식회사 | Organic light emitting display device and the manufacturing method thereof |
| KR102059940B1 (en) * | 2012-11-29 | 2019-12-30 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| JP6231281B2 (en) * | 2013-01-23 | 2017-11-15 | 株式会社ジャパンディスプレイ | Display device |
| KR102069193B1 (en) * | 2013-07-22 | 2020-01-23 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and method for manufacturing the same |
| JP6596224B2 (en) | 2014-05-02 | 2019-10-23 | 株式会社半導体エネルギー研究所 | Light emitting device and input / output device |
| CN104658974A (en) * | 2015-03-12 | 2015-05-27 | 京东方科技集团股份有限公司 | Method for preparing film layer pattern, thin film transistor and array substrate |
| JP2017059314A (en) | 2015-09-14 | 2017-03-23 | 株式会社ジャパンディスプレイ | Display device |
| KR20170080459A (en) * | 2015-12-30 | 2017-07-10 | 엘지디스플레이 주식회사 | Organic light emitting diode display device |
| KR102525822B1 (en) | 2017-07-06 | 2023-04-26 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
| CN107611280B (en) | 2017-09-20 | 2020-04-28 | 京东方科技集团股份有限公司 | Organic light emitting diode substrate and method for manufacturing the same |
| KR102410500B1 (en) * | 2017-11-30 | 2022-06-16 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
| US11335877B2 (en) * | 2018-03-12 | 2022-05-17 | Boe Technology Group Co., Ltd. | Organic light emitting diode array substrate, display panel and display apparatus, and fabricating method thereof |
| CN112952025A (en) * | 2021-03-31 | 2021-06-11 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN115458537A (en) * | 2022-09-30 | 2022-12-09 | 厦门天马微电子有限公司 | Array substrate, preparation method thereof and display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6538374B2 (en) * | 2000-02-16 | 2003-03-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic EL device and manufacturing method thereof |
| US6900470B2 (en) * | 2001-04-20 | 2005-05-31 | Kabushiki Kaisha Toshiba | Display device and method of manufacturing the same |
| CN1866537A (en) * | 2005-05-17 | 2006-11-22 | Lg电子株式会社 | Organic electroluminescent device and method for manufacturing the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002318556A (en) | 2001-04-20 | 2002-10-31 | Toshiba Corp | Active matrix type planar display device and manufacturing method therefor |
| JP4627966B2 (en) * | 2002-01-24 | 2011-02-09 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
| JP4519532B2 (en) * | 2003-06-16 | 2010-08-04 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE USING LIGHT EMITTING DEVICE |
| JP4663257B2 (en) * | 2003-06-16 | 2011-04-06 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
| JP2006318910A (en) * | 2005-05-11 | 2006-11-24 | Lg Electronics Inc | Electroluminescence display and its manufacturing method, and electroluminescence device and its manufacturing method |
| US7812523B2 (en) * | 2005-11-15 | 2010-10-12 | Samsung Electronics Co., Ltd. | Display device having an auxiliary electrode for improved common voltage and fabricating method thereof |
| JP4736757B2 (en) * | 2005-12-01 | 2011-07-27 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2007287354A (en) * | 2006-04-12 | 2007-11-01 | Hitachi Displays Ltd | Organic el display device |
-
2007
- 2007-10-10 JP JP2007264503A patent/JP5443679B2/en active Active
-
2008
- 2008-10-10 CN CN2008101685956A patent/CN101409304B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6538374B2 (en) * | 2000-02-16 | 2003-03-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic EL device and manufacturing method thereof |
| US6900470B2 (en) * | 2001-04-20 | 2005-05-31 | Kabushiki Kaisha Toshiba | Display device and method of manufacturing the same |
| CN1866537A (en) * | 2005-05-17 | 2006-11-22 | Lg电子株式会社 | Organic electroluminescent device and method for manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2007-213999A 2007.08.23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009094347A (en) | 2009-04-30 |
| JP5443679B2 (en) | 2014-03-19 |
| US7915814B2 (en) | 2011-03-29 |
| US20090096371A1 (en) | 2009-04-16 |
| CN101409304A (en) | 2009-04-15 |
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