CN101395703B - 晶片-载体装置及其制造方法、用于晶片-载体装置的层***及其制造方法 - Google Patents

晶片-载体装置及其制造方法、用于晶片-载体装置的层***及其制造方法 Download PDF

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Publication number
CN101395703B
CN101395703B CN2007800071946A CN200780007194A CN101395703B CN 101395703 B CN101395703 B CN 101395703B CN 2007800071946 A CN2007800071946 A CN 2007800071946A CN 200780007194 A CN200780007194 A CN 200780007194A CN 101395703 B CN101395703 B CN 101395703B
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China
Prior art keywords
layer
wafer
carrier
elastomeric material
boundary layer
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CN2007800071946A
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English (en)
Chinese (zh)
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CN101395703A (zh
Inventor
安德烈亚斯·雅各布
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Thin material Co.,Ltd.
Nissan Chemical Corp
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Thin Materials AG
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Filing date
Publication date
Priority claimed from DE200610009353 external-priority patent/DE102006009353A1/de
Priority claimed from DE102006048799.0A external-priority patent/DE102006048799B4/de
Priority claimed from DE102006048800.8A external-priority patent/DE102006048800B4/de
Application filed by Thin Materials AG filed Critical Thin Materials AG
Priority claimed from PCT/EP2007/051952 external-priority patent/WO2007099146A1/de
Publication of CN101395703A publication Critical patent/CN101395703A/zh
Application granted granted Critical
Publication of CN101395703B publication Critical patent/CN101395703B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN2007800071946A 2006-03-01 2007-03-01 晶片-载体装置及其制造方法、用于晶片-载体装置的层***及其制造方法 Active CN101395703B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE200610009394 DE102006009394A1 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem mit einer Schicht als Trennschicht zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE200610009353 DE102006009353A1 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem zum Trägern von dünnen Wafern bei der Halbleiterherstellung mit der Eigenschaft zum Haltern mittels elektrostatischer Aufladung
DE102006009353.4 2006-03-01
DE102006009394.1 2006-03-01
DE102006048799.0A DE102006048799B4 (de) 2006-10-16 2006-10-16 Verfahren und Einrichtung zum Ablösen eines dünnen Wafers oder bereits vereinzelter Bauelemente eines dünnen Wafers von einem Träger
DE102006048799.0 2006-10-16
DE102006048800.8A DE102006048800B4 (de) 2006-10-16 2006-10-16 Mehrlagenschichtsystem mit hartem Träger zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE102006048800.8 2006-10-16
PCT/EP2007/051952 WO2007099146A1 (de) 2006-03-01 2007-03-01 Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

Publications (2)

Publication Number Publication Date
CN101395703A CN101395703A (zh) 2009-03-25
CN101395703B true CN101395703B (zh) 2012-11-28

Family

ID=38329144

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800071946A Active CN101395703B (zh) 2006-03-01 2007-03-01 晶片-载体装置及其制造方法、用于晶片-载体装置的层***及其制造方法

Country Status (2)

Country Link
CN (1) CN101395703B (de)
DE (1) DE102006009394A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006048800B4 (de) 2006-10-16 2018-12-13 Nissan Chemical Industries, Ltd. Mehrlagenschichtsystem mit hartem Träger zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE102010045035A1 (de) * 2010-09-10 2012-03-15 Siemens Aktiengesellschaft Verkapselung und Herstellen einer verkapselten bestückten Leiterplatte
JP2012064710A (ja) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd 半導体素子の製造方法
DE102014219095A1 (de) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
CN113257722B (zh) * 2021-06-29 2021-09-28 深圳中科四合科技有限公司 一种芯片倒膜方法和芯片倒膜设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1282102A (zh) * 2000-09-01 2001-01-31 陈正明 晶片减薄后与载体分离的批量生产工艺方法及其装置
CN1668715A (zh) * 2002-07-15 2005-09-14 陶氏康宁东丽硅氧烷株式会社 硅氧烷基粘合片材、将半导体芯片粘接到芯片连接元件上的方法,和半导体器件

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1282102A (zh) * 2000-09-01 2001-01-31 陈正明 晶片减薄后与载体分离的批量生产工艺方法及其装置
CN1668715A (zh) * 2002-07-15 2005-09-14 陶氏康宁东丽硅氧烷株式会社 硅氧烷基粘合片材、将半导体芯片粘接到芯片连接元件上的方法,和半导体器件

Also Published As

Publication number Publication date
DE102006009394A1 (de) 2007-09-06
CN101395703A (zh) 2009-03-25

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SE01 Entry into force of request for substantive examination
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Owner name: THIN MATERIALS CO., LTD.

Free format text: FORMER OWNER: JACOB + RICHARD INTELLECTUAL PROPERTY UTILIZATION CO., LTD.

Effective date: 20100908

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Patentee before: Thin Materials AG

TR01 Transfer of patent right

Effective date of registration: 20170526

Address after: Tokyo, Japan

Patentee after: NISSAN CHEMICAL INDUSTRIES, Ltd.

Address before: German mugwort

Patentee before: Thin material Co.,Ltd.