CN101393773A - 非易失性存储器的热载流子注入编程的方法和结构 - Google Patents
非易失性存储器的热载流子注入编程的方法和结构 Download PDFInfo
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- CN101393773A CN101393773A CNA2008101756773A CN200810175677A CN101393773A CN 101393773 A CN101393773 A CN 101393773A CN A2008101756773 A CNA2008101756773 A CN A2008101756773A CN 200810175677 A CN200810175677 A CN 200810175677A CN 101393773 A CN101393773 A CN 101393773A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/10—Floating gate memory cells with a single polysilicon layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (38)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/779,838 US7733700B2 (en) | 2007-07-18 | 2007-07-18 | Method and structures for highly efficient hot carrier injection programming for non-volatile memories |
US11/779,838 | 2007-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101393773A true CN101393773A (zh) | 2009-03-25 |
CN101393773B CN101393773B (zh) | 2014-05-07 |
Family
ID=40264723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810175677.3A Expired - Fee Related CN101393773B (zh) | 2007-07-18 | 2008-07-18 | 非易失性存储器的热载流子注入编程的方法和结构 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7733700B2 (zh) |
JP (1) | JP2009027168A (zh) |
KR (1) | KR20090009163A (zh) |
CN (1) | CN101393773B (zh) |
TW (1) | TW200913281A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102411991A (zh) * | 2011-12-20 | 2012-04-11 | 南京大学 | 一种非挥发性存储器低压快速窄注入编程方法 |
CN105931667A (zh) * | 2016-05-11 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 一种闪存的编程方法 |
CN111462801A (zh) * | 2019-01-18 | 2020-07-28 | 爱思开海力士有限公司 | 存储器***及其操作方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE549720T1 (de) * | 2007-06-29 | 2012-03-15 | Nxp Bv | Statische speichervorrichtungen |
JP4594973B2 (ja) | 2007-09-26 | 2010-12-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101566404B1 (ko) * | 2008-11-25 | 2015-11-05 | 삼성전자주식회사 | 반도체 소자의 동작 방법 |
US8139418B2 (en) | 2009-04-27 | 2012-03-20 | Micron Technology, Inc. | Techniques for controlling a direct injection semiconductor memory device |
US8508994B2 (en) * | 2009-04-30 | 2013-08-13 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
KR20120108977A (ko) * | 2009-10-23 | 2012-10-05 | 에이플러스 플래시 테크놀러지, 인크. | Nt―스트링 플래시 디자인을 위한 진보한 천공―스루 프리 프로그램 방식 |
US9779814B2 (en) | 2011-08-09 | 2017-10-03 | Flashsilicon Incorporation | Non-volatile static random access memory devices and methods of operations |
JP2013077780A (ja) * | 2011-09-30 | 2013-04-25 | Seiko Instruments Inc | 半導体記憶装置及び半導体記憶素子 |
US9214465B2 (en) | 2012-07-24 | 2015-12-15 | Flashsilicon Incorporation | Structures and operational methods of non-volatile dynamic random access memory devices |
US9142315B2 (en) | 2012-07-25 | 2015-09-22 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation |
US8873316B2 (en) | 2012-07-25 | 2014-10-28 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation |
US8902667B2 (en) | 2012-07-25 | 2014-12-02 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation |
US8879323B2 (en) | 2012-11-21 | 2014-11-04 | Flashsilicon Incorporation | Interconnection matrix using semiconductor non-volatile memory |
US9685239B1 (en) | 2016-10-12 | 2017-06-20 | Pegasus Semiconductor (Beijing) Co., Ltd | Field sub-bitline nor flash array |
US10685705B2 (en) * | 2018-07-27 | 2020-06-16 | Globalfoundries Inc. | Program and erase memory structures |
US11869566B2 (en) * | 2021-08-05 | 2024-01-09 | Mellanox Technologies, Ltd. | Memory cell based on self-assembled monolayer polaron |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE213562T1 (de) * | 1995-08-11 | 2002-03-15 | Imec Inter Uni Micro Electr | Verfahren zum programmieren einer flash-eeprom- speicherzelle unter optimierung des niedrigen leistungsverbrauchs und verfahren zum löschen dieser zelle |
US6002611A (en) * | 1998-07-22 | 1999-12-14 | Halo Lsi Design & Device Technology, Inc. | Fast, low current program with auto-program for flash memory |
CN1438654A (zh) * | 2002-02-10 | 2003-08-27 | 旺宏电子股份有限公司 | 快闪存储器的数据擦除方法 |
US6891220B2 (en) * | 2002-04-05 | 2005-05-10 | Silicon Storage Technology, Inc. | Method of programming electrons onto a floating gate of a non-volatile memory cell |
US7221591B1 (en) * | 2002-05-06 | 2007-05-22 | Samsung Electronics Co., Ltd. | Fabricating bi-directional nonvolatile memory cells |
US20040004251A1 (en) * | 2002-07-08 | 2004-01-08 | Madurawe Raminda U. | Insulated-gate field-effect thin film transistors |
US7193900B2 (en) * | 2005-01-18 | 2007-03-20 | Mammen Thomas | CACT-TG (CATT) low voltage NVM cells |
US7352631B2 (en) * | 2005-02-18 | 2008-04-01 | Freescale Semiconductor, Inc. | Methods for programming a floating body nonvolatile memory |
US20070158733A1 (en) * | 2006-01-09 | 2007-07-12 | Yield Microelectronics Corp. | High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROM |
US7499336B2 (en) * | 2007-05-14 | 2009-03-03 | Skymedi Corporation | Method of programming a nonvolatile memory cell and related memory array |
-
2007
- 2007-07-18 US US11/779,838 patent/US7733700B2/en active Active
-
2008
- 2008-07-17 TW TW097127134A patent/TW200913281A/zh unknown
- 2008-07-18 KR KR1020080070195A patent/KR20090009163A/ko not_active Application Discontinuation
- 2008-07-18 JP JP2008186992A patent/JP2009027168A/ja active Pending
- 2008-07-18 CN CN200810175677.3A patent/CN101393773B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102411991A (zh) * | 2011-12-20 | 2012-04-11 | 南京大学 | 一种非挥发性存储器低压快速窄注入编程方法 |
CN105931667A (zh) * | 2016-05-11 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 一种闪存的编程方法 |
CN111462801A (zh) * | 2019-01-18 | 2020-07-28 | 爱思开海力士有限公司 | 存储器***及其操作方法 |
CN111462801B (zh) * | 2019-01-18 | 2023-04-28 | 爱思开海力士有限公司 | 存储器***及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200913281A (en) | 2009-03-16 |
US7733700B2 (en) | 2010-06-08 |
KR20090009163A (ko) | 2009-01-22 |
CN101393773B (zh) | 2014-05-07 |
JP2009027168A (ja) | 2009-02-05 |
US20090021984A1 (en) | 2009-01-22 |
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GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151020 Address after: Beijing City, Chaoyang District Wangjing four district 100102 Building No. 7 East 22 2205-1 room Patentee after: Zhongtian Hongjun Semiconductor Co.,Ltd. Address before: California, USA Patentee before: FlashSilicon, Inc. |
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CP01 | Change in the name or title of a patent holder |
Address after: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee after: PEGASUS SEMICONDUCTOR (BEIJING) CO.,LTD. Address before: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee before: Zhongtian Hongjun Semiconductor Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: 201306 C, 888, west two road, Nanhui new town, Pudong New Area, Shanghai Patentee after: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. Address before: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee before: PEGASUS SEMICONDUCTOR (BEIJING) CO.,LTD. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191119 Address after: 201203 Room 201 and 202, 2 / F, No. 1 zhangrun building, Lane 61, shengxia Road, China (Shanghai) pilot Free Trade Zone Patentee after: Zhongtian Hongyu integrated circuit Co.,Ltd. Address before: The new town of Pudong New Area Nanhui lake west two road 201306 Shanghai City No. 888 building C Patentee before: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220620 Address after: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. Address before: Room 201 and 202, 2 / F, No.1 zhangrun building, Lane 61, shengxia Road, China (Shanghai) pilot Free Trade Zone, 201203 Patentee before: Zhongtian Hongyu integrated circuit Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140507 |