CN101390202B - 用于铝铜键合焊盘的盖层 - Google Patents

用于铝铜键合焊盘的盖层 Download PDF

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Publication number
CN101390202B
CN101390202B CN2007800065818A CN200780006581A CN101390202B CN 101390202 B CN101390202 B CN 101390202B CN 2007800065818 A CN2007800065818 A CN 2007800065818A CN 200780006581 A CN200780006581 A CN 200780006581A CN 101390202 B CN101390202 B CN 101390202B
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layer
aluminium
welding pad
bonding welding
copper
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CN101390202A (zh
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李巨钟
凯文·J·埃斯
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

用于诸如集成电路的电子器件(10)的键合焊盘(25)经由互连层(16)与下面的器件(14)实现电气连接。键合焊盘具有材料为铝和铜的第一层(24)和第一层(26)上面的，材料是铝并且完全不含铜的第二材料的第二层(26)。第二层(26)作为第一层(24)的盖，用于防止第一层(24)中的铜因残留的化学元素而被腐蚀。诸如金引线的引线(32)可以键合到键合焊盘的第二层(26)。

Description

用于铝铜键合焊盘的盖层
技术领域
本发明一般涉及半导体器件，并且更具体地，涉及半导体器件中的电气互连结构。
背景技术
半导体具有所需的用于在多种电路组件之间形成电气接触的许多电气互连。常见的电气互连被称为键合焊盘。键合焊盘是从电气集成电路到集成电路外部的点的互连。典型的键合焊盘是由含有少量的铜的铝合金形成的。用于形成半导体器件中的开口以形成键合焊盘的半导体工艺典型地在键合焊盘位置的表面上留下残留化学物质。一个残留化学物质是氟(F)。随后的键合焊盘的形成导致了键合焊盘中使用的铜和铝在氟环境中反应。该反应典型地导致了键合焊盘的局部腐蚀。例如，键合焊盘可能出现凹陷或孔洞，并且不利地影响半导体器件的后继处理。例如，键合焊盘的表面粗糙度的增加导致了随后的与键合焊盘的球键合接触的粘合不太可靠。键合焊盘上的不粘现象导致了引线键合工艺产率的损失。
附图说明
本发明借助于示例进行说明并且不限于附图，其中相同的参考符号表示相似的元件。
图1根据本发明的一个形式以截面的形式说明了键合焊盘结构；
图2以截面的形式说明了具有附连的球键合的图1的键合焊盘；以及
图3根据本发明以截面的形式说明了另一形式的键合焊盘。
本领域的技术人员应认识到，图中的元件被说明用于简化和清楚的目的，没有必要依比例绘制。例如，图中的某些元件的尺寸可能相对于其他元件放大，用以有助于改善对本发明的实施例的理解。
具体实施方式
图1中说明了具有衬底12的半导体器件10。在一个形式中，衬底12由硅、锗或适当的III-V化合物材料形成，诸如可以使用砷化镓(GaAs)。在衬底12中和衬底12上面形成一个或多个有源器件，诸如晶体管14。晶体管14是使用传统工艺形成的传统的晶体管结构，并且因此不作详细讨论。在衬底12上面是一个或多个互连层16。在一个形式中，互连层16由绝缘材料形成，诸如氧化物，并且具有通过该互连层16的多个过孔，以实现针对衬底12的连接。例如，诸如过孔19、过孔21和过孔23的过孔存在于一个或多个互连层16中。过孔19以非线性的路径通过一个或多个互连层16，实现针对晶体管14的栅极的电气接触。在一个或多个互连层16上面形成最终金属部分18，其与过孔19、21和23相接触。最终金属部分18由铜形成。用于最终金属部分18的铜是尽可能纯的。在一个形式中，通过电镀并且随后使用化学机械抛光(CMP)工艺来形成，以使最终金属部分18的上表面和一个或多个互连层16的上表面平整化。在一个或多个互连层16上面是构图的或刻蚀的钝化层20。该钝化层20被构图或被刻蚀以使最终金属部分18的一部分而非全部的上表面暴露。钝化层20可由氧化物或氮化物形成并且具有使最终金属部分18暴露的开口。在最终金属部分18上面以及沿钝化层20的暴露的侧壁形成阻挡层22。在一个形式中，阻挡层22由下列传导材料中的一个形成：钽或钛。此外，双层结构可用于阻挡层。在双层实现方案中，材料钽和氮化钽或者钛和氮化钛用于阻挡层22。通过所选材料的选择性淀积形成阻挡层22。阻挡层22用于保护下面的最终金属部分18或者铜，防止其扩散到随后形成的任何上面的材料中。阻挡层22的尺寸不是严格的并且可以依赖于特定应用而改变。例如，阻挡层22的长度可以横向延伸，如图1中所示。厚度依赖于工艺并且典型地小于500埃。
在阻挡层22上面形成键合焊盘层24。键合焊盘层24由铝和铜形成，其中铜少于1％。在一个形式中，铜的百分比是0.5％。应当理解，由于阻挡层22将键合焊盘层24和最终金属部分18隔开，因此不存在从最终金属部分18迁移到键合焊盘层24中的铜。键合焊盘层24上面是盖层26。在一个形式中，盖层26是纯铝或铝合金。如此处使用的术语“纯铝”意味着含有至少98％的铝的材料。在一个形式中，期望具有99.9％的铝的纯铝盖层26。在使用铝合金时，纯铝与下列材料中一个组合：钯(Pd)、镍(Ni)、金(Au)、铂(Pt)、钌(Ru)、铑(Rh)、铱(Ir)、铈(Ce)和钼(Mo)。所得到的金属互连产生了键合焊盘25。盖层26的功能是提供用于引线键合或块接触的平滑表面。应当注意，盖层26与键合焊盘层24的结合使用允许引线键合形成到没有凹陷或其他腐蚀的金属表面。用于实现引线键合接触的上部的金属表面是不含铜的。因此，半导体处理中使用的和与铜-铝合金反应的化学物质不能不利地影响该公开结构的键合表面。
图2中说明了图1的键合焊盘25的进一步处理。在所说明的形式中，在盖层26的预定部分上形成金球键合30。金球键合30是通过传统的处理形成的，其中将超声或热能量施加到金球30和盖层26的顶表面之间的界面。施加到该界面的热超声能量足够用于擦净或移除留在盖层26上的任何固有的氧化铝层并且形成金铝金属互化物。因此，盖层26上形成的金球键合30形成了低电阻电气接触。
应当理解，其他金属可用于实现球键合30。其他金属包含铜和银及其合金。金球键合30可以横向沿盖层26放置在任何位置，包含紧邻最终金属部分18上方。不论金球键合30安置在何处，由于盖层26由纯铝形成并且不会因形成盖层26和形成金球键合30的步骤之间使用的处理化学物质而腐蚀，因此能实现针对盖层26的良好的电气连接。应当理解，由于金球键合30是传统地形成的，并且因此将不作进一步详细描述。然后使传导引线32与金球键合30接触，用于允许从金球键合30到待确定位置(未示出)的电气连接。引线32通常具有与球键合相同的材料并且典型地是纯铜、铜合金、纯金、金合金、纯银或者银合金中的一个，其中“纯”意味着至少98％的纯度。
图3中说明了可替换的实施例，其说明了具有键合焊盘55的半导体器件40。特别地，提供衬底42，其具有在其中形成的互连46。互连46是诸如金属的传导材料。衬底42可由硅、锗或者适当的III-V化合物材料形成，诸如砷化镓(GaAs)。在衬底42的上部表面上形成键合焊盘44。在一个形式中，键合焊盘44是铜、铝、铜合金或铝合金。键合焊盘44是传导的并且是铝合金。在一个形式中，铝合金含有0.5％的铜。在另一形式中，铝合金含有1％的硅。
在键合焊盘44上面可选地形成阻挡层50。在一个形式中，阻挡层由下列传导材料中一个形成：钽或钛。此外，双层结构可用于阻挡层50。在双层结构实现方案中，材料钽和氮化钽或者钛和氮化钛用于阻挡层50。在提供阻挡层50时，其用于通过防止键合焊盘44中的任何铜或硅扩散到后继形成的任何上面的材料中，保护下面的键合焊盘44。在阻挡层50上面形成盖层52。在不使用阻挡层50时，盖层52可以直接形成在键合焊盘44上。阻挡层50和盖层52均通过衬底42上面的均厚淀积(blanket deposition)形成，诸如溅射。阻挡层50和盖层52被构图以导致如图3中说明的层。在一个形式中，盖层52由纯铝或铝合金制成。此时，在处理中，均厚淀积钝化层48。钝化层48是电绝缘材料，诸如氧化物或氮化物。钝化层48被构图以产生其中形成键合焊盘55的开口。在开口中使一部分盖层52暴露。此时，在处理中，金球键合54直接形成在暴露的盖层52上。应当理解，其他金属可用于实现球键合54。金球键合54具有与之附连的引线56，用于将键合焊盘55连接到未说明的点。
到此为止，应当认识到，提供了一种用于制造具有键合焊盘的半导体器件的方法。该键合焊盘不具有由处理过程中通常使用的残留化学物质所产生的腐蚀效应。因此，此处公开的键合焊盘是可靠的并且呈现出最小的产率减小。管芯内的所有键合焊盘在表面完整性上也是一致的。
在一个形式中，此处提供了一种具有键合焊盘电子器件，该键合焊盘具有第一材料的第一层，第一材料包含铝和铜。第二材料的第二层位于第一层上方，第二材料包括铝，第二材料完全不含铜。因此第二层的第二材料是基于铝的。在一个形式中，第一材料包含重量上至少95％的铝并且包括重量上少于1％的铜。在另一形式中，第二材料包含重量上至少98％的铝。在另一形式中，第二材料包含至少如下材料的一个：钯、镍、金、铂、钌、铑、铱、铈和钼。还是在另一形式中，第二材料是重量上至少99.9％的铝。还是在另一形式中，第二材料包含钯，其中钯在重量上少于1％。在进一步的另一形式中，该电子器件进一步包含引线，其键合到第二层。还是在另一形式中，引线包含重量上至少99％的金。在另一形式中，该器件具有包含半导体材料的至少一个晶体管和该至少一个晶体管上方的互连层。该互连层包含导电互连，其中键合焊盘电气耦合到传导互连。还是在另一形式中，键合焊盘包含位于第一层和第二层之间的阻挡层。
还是在另一形式中，提供了一种形成电子器件的方法。形成键合焊盘的第一层，第一层具有第一材料，第一材料包含铝和铜。在第一层上方形成键合焊盘的第二层，第二层具有第二材料，第二材料包含铝，第二材料完全不含铜。还是在另一形式中，第一材料包含重量上至少95％的铝并且重量上少于1％的铜。还是在另一形式中，第二材料包含重量上至少98％的铝。在另一形式中，第二材料包含至少如下材料的一个：钯、镍、金、铂、钌、铑、铱、铈和钼。在另一形式中，第二材料是重量上至少99.9％的铝。在另一形式中，第二材料包括钯，其中钯在重量上少于1％。在另一形式中，引线键合到键合焊盘的第二层。还是在另一形式中，引线是重量上至少99％的金。还是在另一形式中，形成包含半导体材料的晶体管。在晶体管上方形成互连层，互连层包含导电互连。键合焊盘电气耦合到互连。在另一形式中，键合焊盘的第一层的形成包含在晶片上方形成第一材料的第一层。键合焊盘的第二层的形成包含在晶片上方的第一材料的第一层上方形成第二材料的第二层。键合焊盘的第一层的形成包含在晶片上方的第一材料的第一层上方形成第二材料的第二层之后，对晶片上方的第一材料的第一层构图。键合焊盘的第二层的形成包含对晶片上方的第一材料的第一层上方的第二材料的第二层构图。
还是在另一形式中，此处提供了一种通过形成键合焊盘形成电子器件的方法，键合焊盘包含第一材料的第一层，第一材料包含重量上至少95％的铝，并且第一材料包含铜。键合焊盘包含第一层上方的第二材料的第二层，第二材料具有与第一材料不同的组合物。第二材料具有下列组合物的一个：1)重量上至少95％的铝并且包含至少一个由钯、镍、金、铂、钌、铑、铱、铈和钼构成的组中的一个；或者2)重量上至少99.9％的铝。引线键合到键合焊盘的第二层。
在前面的说明书中，通过参考特定实施例描述了本发明。然而，本领域的普通技术人员应认识到，在不偏离下面权利要求中阐述的本发明的范围的前提下，可以进行多种修改和改变。例如，可以产生键合焊盘轮廓的多种宽度和高度。尽管此处描述的键合焊盘实施例可以与超精细的引线键合间距结合使用，但是该键合焊盘可用于范围广泛的电路尺寸。
因此，说明书和附图应被视为说明性的而非限制性的，并且所有该修改应包含在本发明的范围内。上文参考特定实施例已经描述了益处、其他优点和对问题的解决方案。然而，该益处、优点、对问题的解决方案、以及可以导致任何益处、优点或解决方案的发生或者使其变得更加显著的任何元件不应被解释为任何或所有权利要求的关键的、必需的或本质的特征或元件。如此处使用的术语“包括”或者其任何其他变化形式应该涵盖非排他性的内含物，由此包括元件列表的工艺、方法、产品或装置不仅包含这些元件，而且可以包含未明确列出的或对于该工艺、方法、产品或装置所固有的其他元件。如此处使用的术语“一个”被定义为一个或不止一个。如此处使用的术语“多个”被定义为两个或多于两个。如此处使用的术语“另一”被定义为至少第二个或更多。如此处使用的术语“包含”和/或“具有”被定义为包括(即，开放式语言)。如此处使用的术语“耦合”被定义为连接，但是没有必要是直接连接，也没有必要是机械连接。

Claims (7)

1.一种电子器件(10)，包括：
键合焊盘(25)，所述键合焊盘包括：
金属部分(18)，用于从上方形成电气接触；
第一传导层(22)，在所述金属部分上面并且与所述金属部分(18)接触，所述第一传导层通过保护下面的所述金属部分防止其扩散至上面的材料而成为阻挡；
第一材料的第二传导层(24)，在所述第一传导层上面，并且与所述第一传导层接触，所述第一材料包括铝和铜；以及
第二材料的第三传导层(26)，在所述第二传导层上方，并且与所述第二传导层接触，所述第二材料包括铝并且完全不含铜，而且至少包括钯，其中所述钯在重量上少于1％；以及
传导球键合和引线，与所述第三传导层(26)直接接触。
2.如权利要求1所述的电子器件，其中所述第一材料包括重量上至少95％的铝和重量上少于1％的铜。
3.如权利要求1所述的电子器件，其中所述第二材料包括重量上至少98％的铝。
4.如权利要求1所述的电子器件，其中所述第二材料是重量上至少99.9％的铝。
5.如权利要求1所述的电子器件，进一步包括：
衬底(12)；
晶体管(14)，形成在所述衬底(12)之内和上方；以及
一个或多个互连层(16)，在所述衬底(12)上面，用于形成到所述晶体管(14)的电气接触，其中，所述一个或更多互连层(16)中的至少一个包括所述金属部分(18)。
6.如权利要求5所述的电子器件，其中所述引线包括重量上至少99％的金。
7.如权利要求1所述的电子器件，进一步包括：
多个互连层(16)，在所述金属部分下面，并且包括多个过孔(19，21，23)；以及
晶体管(14)，包括连接至所述多个过孔之一(19)的栅极。
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