CN101383337A - 可编程相变材料结构及其形成方法 - Google Patents
可编程相变材料结构及其形成方法 Download PDFInfo
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- CN101383337A CN101383337A CNA2008101294581A CN200810129458A CN101383337A CN 101383337 A CN101383337 A CN 101383337A CN A2008101294581 A CNA2008101294581 A CN A2008101294581A CN 200810129458 A CN200810129458 A CN 200810129458A CN 101383337 A CN101383337 A CN 101383337A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 193
- 239000003989 dielectric material Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 89
- 239000000463 material Substances 0.000 claims description 41
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- 239000010410 layer Substances 0.000 description 21
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- 230000009467 reduction Effects 0.000 description 3
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- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
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- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/850,742 US7633079B2 (en) | 2007-09-06 | 2007-09-06 | Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material |
US11/850,742 | 2007-09-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101383337A true CN101383337A (zh) | 2009-03-11 |
CN101383337B CN101383337B (zh) | 2010-07-21 |
Family
ID=40430858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101294581A Expired - Fee Related CN101383337B (zh) | 2007-09-06 | 2008-07-31 | 可编程相变材料结构及其形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7633079B2 (zh) |
CN (1) | CN101383337B (zh) |
TW (1) | TW200919716A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101901823A (zh) * | 2009-05-28 | 2010-12-01 | 台湾积体电路制造股份有限公司 | 集成电路结构与形成集成电路结构的方法 |
CN104040711A (zh) * | 2012-01-11 | 2014-09-10 | 国际商业机器公司 | 后段电可编程熔断器 |
Families Citing this family (42)
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US7736964B2 (en) * | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
US8217380B2 (en) * | 2008-01-09 | 2012-07-10 | International Business Machines Corporation | Polysilicon emitter BJT access device for PCRAM |
US7642176B2 (en) * | 2008-04-21 | 2010-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse structure and method |
GB2460275B (en) * | 2008-05-23 | 2012-12-19 | Exacttrak Ltd | A Communications and Security Device |
US20100163833A1 (en) * | 2008-12-31 | 2010-07-01 | Stmicroelectronics S.R.I. | Electrical fuse device based on a phase-change memory element and corresponding programming method |
KR101536562B1 (ko) * | 2009-02-09 | 2015-07-14 | 삼성전자 주식회사 | 반도체 집적 회로 장치 |
US8569734B2 (en) | 2010-08-04 | 2013-10-29 | Micron Technology, Inc. | Forming resistive random access memories together with fuse arrays |
US8927909B2 (en) | 2010-10-11 | 2015-01-06 | Stmicroelectronics, Inc. | Closed loop temperature controlled circuit to improve device stability |
US9159413B2 (en) * | 2010-12-29 | 2015-10-13 | Stmicroelectronics Pte Ltd. | Thermo programmable resistor based ROM |
US8809861B2 (en) | 2010-12-29 | 2014-08-19 | Stmicroelectronics Pte Ltd. | Thin film metal-dielectric-metal transistor |
US8526214B2 (en) * | 2011-11-15 | 2013-09-03 | Stmicroelectronics Pte Ltd. | Resistor thin film MTP memory |
US9070858B2 (en) | 2012-03-16 | 2015-06-30 | Micron Technology, Inc. | Method, system, and device for storage cell, such as for memory |
HUP1200249A2 (hu) * | 2012-04-27 | 2014-02-28 | Budapesti Mueszaki Es Gazdasagtudomanyi Egyetem | Logikai elrendezés |
US9224640B2 (en) | 2012-08-17 | 2015-12-29 | Globalfoundries Inc. | Method to improve fine Cu line reliability in an integrated circuit device |
US9640757B2 (en) * | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
US9093452B2 (en) | 2013-03-08 | 2015-07-28 | International Business Machines Corporation | Electronic fuse with resistive heater |
US9362492B2 (en) | 2014-08-25 | 2016-06-07 | Qualcomm Switch Corp. | Integrated phase change switch |
US9714914B2 (en) | 2015-01-20 | 2017-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS compatible biofet |
US9968927B2 (en) | 2015-05-22 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical biosensor device |
US10522400B2 (en) * | 2016-05-27 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded temperature control system for a biosensor |
US10101295B2 (en) | 2016-12-15 | 2018-10-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | On-chip reference electrode for biologically sensitive field effect transistor |
CN108932962A (zh) * | 2017-05-25 | 2018-12-04 | 清华大学 | 相变存储器写入、读取、擦除数据的方法 |
US10686130B2 (en) * | 2018-08-14 | 2020-06-16 | Newport Fab, Llc | Phase-change material (PCM) contact configurations for improving performance in PCM RF switches |
US10862477B2 (en) | 2018-08-14 | 2020-12-08 | Newport Fab, Llc | Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches |
US10862032B2 (en) | 2018-08-14 | 2020-12-08 | Newport Fab, Llc | Phase-change material (PCM) radio frequency (RF) switch |
US11031689B2 (en) | 2018-08-14 | 2021-06-08 | Newport Fab, Llc | Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches |
US11196401B2 (en) | 2018-08-14 | 2021-12-07 | Newport Fab, Llc | Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches |
US10944052B2 (en) | 2018-08-14 | 2021-03-09 | Newport Fab, Llc | Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer |
US10770389B2 (en) | 2018-08-14 | 2020-09-08 | Newport Fab, Llc | Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals |
US11050022B2 (en) * | 2018-08-14 | 2021-06-29 | Newport Fab, Llc | Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance |
US11031555B2 (en) | 2018-08-14 | 2021-06-08 | Newport Fab, Llc | Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits |
US10916540B2 (en) | 2018-08-14 | 2021-02-09 | Newport Fab, Llc | Device including PCM RF switch integrated with group III-V semiconductors |
US10644236B2 (en) * | 2018-08-14 | 2020-05-05 | Newport Fab, Llc | Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance |
US10615338B2 (en) | 2018-08-14 | 2020-04-07 | Newport Fab, Llc | Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches |
US10937960B2 (en) | 2018-08-14 | 2021-03-02 | Newport Fab, Llc | Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch |
US11158794B2 (en) | 2018-08-14 | 2021-10-26 | Newport Fab, Llc | High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches |
US10978639B2 (en) | 2018-08-14 | 2021-04-13 | Newport Fab, Llc | Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches |
US11522010B2 (en) | 2019-08-19 | 2022-12-06 | Northrop Grumman Systems Corporation | Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS |
CN113327641B (zh) * | 2020-02-28 | 2024-05-03 | 中芯国际集成电路制造(上海)有限公司 | eFuse存储单元、eFuse存储阵列及其使用方法、eFuse*** |
CN112002652B (zh) * | 2020-07-21 | 2023-10-20 | 中电科工程建设有限公司 | 一种芯片制造过程中电镀工艺成品率的控制方法 |
CN114171083A (zh) | 2020-11-03 | 2022-03-11 | 台湾积体电路制造股份有限公司 | 存储器器件 |
US20230029141A1 (en) * | 2021-07-23 | 2023-01-26 | Taiwan Semiconductor Manufacturing Company | Embedded double side heating phase change random access memory (pcram) device and method of making same |
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US6448576B1 (en) * | 2001-08-30 | 2002-09-10 | Bae Systems Information And Electronic Systems Integration, Inc. | Programmable chalcogenide fuse within a semiconductor device |
JP4190238B2 (ja) * | 2002-09-13 | 2008-12-03 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
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US20050158950A1 (en) * | 2002-12-19 | 2005-07-21 | Matrix Semiconductor, Inc. | Non-volatile memory cell comprising a dielectric layer and a phase change material in series |
KR100491978B1 (ko) * | 2003-04-12 | 2005-05-27 | 한국전자통신연구원 | 저 전력 동작이 가능한 상변화 메모리 소자 및 그 제조 방법 |
US6970034B1 (en) * | 2003-07-07 | 2005-11-29 | Sun Microsystems, Inc. | Method and apparatus for reducing power consumption due to gate leakage during sleep mode |
JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
US7030651B2 (en) * | 2003-12-04 | 2006-04-18 | Viciciv Technology | Programmable structured arrays |
US7577859B2 (en) * | 2004-02-20 | 2009-08-18 | International Business Machines Corporation | System and method of controlling power consumption in an electronic system by applying a uniquely determined minimum operating voltage to an integrated circuit rather than a predetermined nominal voltage selected for a family of integrated circuits |
US7391642B2 (en) * | 2005-01-25 | 2008-06-24 | Intel Corporation | Multilevel programming of phase change memory cells |
US7221579B2 (en) * | 2005-06-13 | 2007-05-22 | International Business Machines Corporation | Method and structure for high performance phase change memory |
US7388273B2 (en) * | 2005-06-14 | 2008-06-17 | International Business Machines Corporation | Reprogrammable fuse structure and method |
US8183551B2 (en) * | 2005-11-03 | 2012-05-22 | Agale Logic, Inc. | Multi-terminal phase change devices |
US7494849B2 (en) * | 2005-11-03 | 2009-02-24 | Cswitch Inc. | Methods for fabricating multi-terminal phase change devices |
US7324365B2 (en) * | 2006-03-02 | 2008-01-29 | Infineon Technologies Ag | Phase change memory fabricated using self-aligned processing |
US7646006B2 (en) * | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US7345899B2 (en) * | 2006-04-07 | 2008-03-18 | Infineon Technologies Ag | Memory having storage locations within a common volume of phase change material |
US7473921B2 (en) * | 2006-06-07 | 2009-01-06 | International Business Machines Corporation | Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement |
US7750333B2 (en) * | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
US7453081B2 (en) * | 2006-07-20 | 2008-11-18 | Qimonda North America Corp. | Phase change memory cell including nanocomposite insulator |
US7800092B2 (en) * | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
US7394089B2 (en) * | 2006-08-25 | 2008-07-01 | International Business Machines Corporation | Heat-shielded low power PCM-based reprogrammable EFUSE device |
US7411818B1 (en) * | 2007-02-07 | 2008-08-12 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures using externally heated phase change material |
US7969770B2 (en) * | 2007-08-03 | 2011-06-28 | International Business Machines Corporation | Programmable via devices in back end of line level |
US7659534B2 (en) * | 2007-08-03 | 2010-02-09 | International Business Machines Corporation | Programmable via devices with air gap isolation |
-
2007
- 2007-09-06 US US11/850,742 patent/US7633079B2/en not_active Expired - Fee Related
-
2008
- 2008-07-31 CN CN2008101294581A patent/CN101383337B/zh not_active Expired - Fee Related
- 2008-09-03 TW TW097133775A patent/TW200919716A/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101901823A (zh) * | 2009-05-28 | 2010-12-01 | 台湾积体电路制造股份有限公司 | 集成电路结构与形成集成电路结构的方法 |
CN104040711A (zh) * | 2012-01-11 | 2014-09-10 | 国际商业机器公司 | 后段电可编程熔断器 |
US9685404B2 (en) | 2012-01-11 | 2017-06-20 | International Business Machines Corporation | Back-end electrically programmable fuse |
US9893011B2 (en) | 2012-01-11 | 2018-02-13 | International Business Machines Corporation | Back-end electrically programmable fuse |
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US7633079B2 (en) | 2009-12-15 |
TW200919716A (en) | 2009-05-01 |
CN101383337B (zh) | 2010-07-21 |
US20090065761A1 (en) | 2009-03-12 |
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