CN101368265A - Gas path system of apparatus for preparing gallium nitride thin film - Google Patents
Gas path system of apparatus for preparing gallium nitride thin film Download PDFInfo
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- CN101368265A CN101368265A CNA200810028855XA CN200810028855A CN101368265A CN 101368265 A CN101368265 A CN 101368265A CN A200810028855X A CNA200810028855X A CN A200810028855XA CN 200810028855 A CN200810028855 A CN 200810028855A CN 101368265 A CN101368265 A CN 101368265A
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Abstract
The invention relates to an air course system in a device for preparing a gallium nitride film which includes a nitrogen air source supply system (1), a plurality of organic metal air source inlet pipeline and outlet pipeline systems (2), a plurality of flow control systems (3) respectively connected with a plurality of organic metal air source inlet pipeline and outlet pipeline systems (2) and a pressure control system (4). In the invention, as a structure which includes the nitrogen air source supply system, a plurality of organic metal air source inlet pipeline and outlet pipeline systems, a plurality of flow control systems respectively connected with a plurality of organic metal air source inlet pipeline and outlet pipeline systems and the pressure control system is adopted, compared with the prior art, the air course system in a device for preparing a gallium nitride film has the advantages or effects that the air course system can supply the output of organic metal air sources within four; each air course can freely switch; the flow of each air course can be precisely controlled; a GaN film with different doped components can be prepared. The invention relates to an air course system in a device for preparing a gallium nitride film which is simply operated and conveniently controlled.
Description
Technical field
The present invention is a kind of air-channel system for preparing in the gallium nitride film device, belongs to the renovation technique of the air-channel system in the preparation gallium nitride film device.
Background technology
With gan (GaN) film is that the broad stopband direct semiconductor material of representative enjoys attention in recent years in the world, because it is wide to have band gap, the luminous efficiency height, electronic drift saturating speed height, the thermal conductivity height, hardness is big, specific inductivity is little, stable and the radioprotective of chemical property, characteristics such as high temperature resistant, make it at high brightness blue light-emitting diode (LED), opto-electronic device such as blue laser and ultraviolet detector and radioprotective, high frequency, high temperature, field of electronic devices such as high pressure have huge application market prospect, also all types of film deposition equipments have been proposed higher design requirements simultaneously.The ECR-MOPECVD technology is the new technology that newly-developed gets up, it have plasma density height, degree of ionization be higher than 10%, do not have in electrode discharge, no energetic ion (ion energy 20～40eV), be easy to advantage such as the even plated film of big area.ECR-MOPECVD can be ionized reactant gases TMG and high pure nitrogen, dissociate, excite behind the feed-in reaction chamber, produce high-density, highly active reactant activity base, prepare under than low deposition temperature and even room temperature high-quality, evenly, the thin-film material of compact structure.
In all types of depositing devices, air-channel system all is unusual important components, and ECR-MOPECVD is no exception.The plasma reinforced thin film deposition utilization be a large amount of high mars free radicals, excited state particle, the ion generation vapor deposition reaction that is rich in the plasma body in the reaction chamber, on substrate, be deposited as film through gas transport, realize the low temperature depositing of palpus high temperature synthetic materials.Different reactive gas species has determined the composition of deposit film, and the reactant gases of different ratios is imported, and has determined the structure and the performance of deposit film again to a great extent.Specific to deposition GaN film, the air-channel system of existing ECR-MOPECVD can only provide the output of the organo-metallic source of the gas below two kinds, has limited the application of different doping compositions in the GaN film; And the air-channel system of existing ECR-MOPECVD is difficult to accomplish between different gas circuits free accurate conversion and control, thereby limited the preparation and the application of high-quality GaN film to a certain extent.
Summary of the invention
The objective of the invention is to consider the problems referred to above and provide a kind of gas circuit of each organo-metallic source of the gas freely to switch, the air-channel system in the preparation gallium nitride film device that each gas circuit flow can accurately be controlled.The present invention is simple to operate, and control is convenient, can be used to prepare the high-quality gallium nitride film of different doping compositions.
Technical scheme of the present invention is: include nitrogen source of the gas plenum system, several organo-metallic source of the gas turnover piping systems, pass in and out several flow control systems that piping systems are connected with several organo-metallic sources of the gas respectively, pressure control system, wherein nitrogen source of the gas plenum system comprises two mass flowmeters that are connected with the nitrogen source of the gas, one of them mass flowmeter that is used to control as the nitrogen flow of reactant gases directly links to each other with reaction chamber, another mass flowmeter that is used to control as the nitrogen flow of organic metal gas carrier gas links to each other with the turnover piping system of organo-metallic source of the gas, each organo-metallic source of the gas turnover piping system comprises the organo-metallic source of the gas, be used to control three control valves and the connecting pipeline thereof of the input and output of the output of organic metal gas and nitrogen, wherein the organo-metallic source of the gas is connected with nitrogen source of the gas plenum system and flow control system respectively by two control valves and connecting pipeline thereof, another control valve is connected between above-mentioned two control valves, flow control system comprises and is used for freely switching different gas circuits, and accurately control the mass flowmeter of each gas circuit flow, pressure control system comprises the pressure controlled valve that is connected with several flow control systems, pressure controller, needle-valve and connecting pipeline thereof, each flow control system is passed through pressure controlled valve successively, pressure controller, and needle-valve is connected with reaction chamber.
Three control valves of above-mentioned organo-metallic source of the gas turnover piping system are ball valve.
The pressure controlled valve of above-mentioned pressure control system is a ball valve.
Above-mentioned organo-metallic source of the gas turnover piping system is provided with more than 3 or 3, and flow control system is corresponding also to be provided with more than 3 or 3.
The present invention is because employing includes nitrogen source of the gas plenum system, several organo-metallic sources of the gas turnover piping systems, several flow control systems that are connected with several organo-metallic sources of the gas turnover piping systems respectively, the structure of pressure control system, compared with prior art, the present invention has following advantage or effect: air-channel system of the present invention can provide 4 kinds of outputs with interior organo-metallic source of the gas, each gas circuit can freely be switched, each gas circuit flow can accurately be controlled, and can prepare the GaN film of different doping compositions.The present invention is a kind of simple to operate, and control prepares the air-channel system in the gallium nitride film device easily.
Description of drawings
Fig. 1 is a schematic diagram of the present invention.
Embodiment
Embodiment:
Schematic diagram of the present invention as shown in Figure 1, include nitrogen source of the gas plenum system 1, several organo-metallic source of the gas turnover piping systems 2, pass in and out several flow control systems 3 that piping systems 2 are connected with several organo-metallic sources of the gas respectively, pressure control system 4, wherein nitrogen source of the gas plenum system 1 comprises two mass flowmeter MFCl that are connected with the nitrogen source of the gas, MFC2, one of them mass flowmeter MFCl that is used to control as the nitrogen flow of reactant gases directly links to each other with reaction chamber 5, another mass flowmeter MFC2 that is used to control as the nitrogen flow of organic metal gas carrier gas links to each other with the turnover piping system 2 of organo-metallic source of the gas, each organo-metallic source of the gas turnover piping system 2 comprises organo-metallic source of the gas 21, be used to control three control valves 22 of the input and output of the output of organic metal gas and nitrogen, 23,24 and connecting pipeline, wherein organo-metallic source of the gas 21 is by two control valves 22,23 and connecting pipeline be connected with nitrogen source of the gas plenum system 1 and flow control system 3 respectively, another control valve 24 is connected above-mentioned two control valves 22, between 23, flow control system 3 comprises and is used for freely switching different gas circuits, and accurately control the mass flowmeter MFC3 of each gas circuit flow, pressure control system 4 comprises the pressure controlled valve 41 that is connected with several flow control systems 3, pressure controller 42, needle-valve 43 and connecting pipeline thereof, each flow control system 3 are successively by pressure controlled valve 41, pressure controller 42, and needle-valve 42 is connected with reaction chamber 5.
In the present embodiment, three control valves 22,23,24 in the above-mentioned organo-metallic source of the gas turnover piping system 2 are ball valve.The pressure controlled valve 41 of above-mentioned pressure control system 4 is a ball valve.
Above-mentioned organo-metallic source of the gas turnover piping system 2 is provided with more than 3 or 3 flow control system 3 corresponding also being provided with more than 3 or 3.In the present embodiment, organo-metallic source of the gas turnover piping system 2 is provided with 4, and flow control system 3 is corresponding also to be provided with 4.
Principle of work of the present invention is as follows: the nitrogen source of the gas enters reaction chamber 5 by 2 mass flowmeters respectively and enters organo-metallic source of the gas turnover piping system 2,4 organo-metallic sources of the gas 21 are by the high-performance stainless steel pipe, the high-performance ball valve, the special stainless steel adapter is connected with the flow control system of its corresponding configuration, the turnover piping system of each organo-metallic source of the gas finally links to each other with pressure control system, pressure control system is realized total organic metal gas pressure-controlling, control the flow size that each organic metal gas and nitrogen enter reaction chamber, then can prepare the GaN film of different doping compositions.
Claims (4)
1. air-channel system for preparing in the gallium nitride film device, it is characterized in that including nitrogen source of the gas plenum system (1), several organo-metallic source of the gas turnover piping systems (2), pass in and out several flow control systems (3) that piping systems (2) are connected with several organo-metallic sources of the gas respectively, pressure control system (4), wherein nitrogen source of the gas plenum system (1) comprises two mass flowmeter (MFC1 that are connected with the nitrogen source of the gas, MFC2), one of them mass flowmeter (MFC1) that is used to control as the nitrogen flow of reactant gases directly links to each other with reaction chamber (5), another mass flowmeter (MFC2) that is used to control as the nitrogen flow of organic metal gas carrier gas links to each other with the turnover piping system (2) of organo-metallic source of the gas, each organo-metallic source of the gas turnover piping system (2) comprises organo-metallic source of the gas (21), be used to control three control valves (22 of the input and output of the output of organic metal gas and nitrogen, 23,24) and connecting pipeline, wherein organo-metallic source of the gas (21) is by two control valves (22,23) and connecting pipeline be connected with nitrogen source of the gas plenum system (1) and flow control system (3) respectively, another control valve (24) is connected above-mentioned two control valves (22,23) between, flow control system (3) comprises and is used for freely switching different gas circuits, and accurately control the mass flowmeter (MFC3) of each gas circuit flow, pressure control system (4) comprises the pressure controlled valve (41) that is connected with several flow control systems (3), pressure controller (42), needle-valve (43) and connecting pipeline thereof, each flow control system (3) are successively by pressure controlled valve (41), pressure controller (42), and needle-valve (42) is connected with reaction chamber (5).
2. the air-channel system in the preparation gallium nitride film device according to claim 1 is characterized in that three control valves (22,23,24) of above-mentioned organo-metallic source of the gas turnover piping system (2) are ball valve.
3. the air-channel system in the preparation gallium nitride film device according to claim 1, the pressure controlled valve (41) that it is characterized in that above-mentioned pressure control system (4) is a ball valve.
4. according to the air-channel system in each described preparation gallium nitride film device of claim 1 to 3, it is characterized in that above-mentioned organo-metallic source of the gas turnover piping system (2) is provided with more than 3 or 3, flow control system (3) is corresponding also to be provided with more than 3 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810028855XA CN101368265B (en) | 2008-06-17 | 2008-06-17 | Gas path system of apparatus for preparing gallium nitride thin film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810028855XA CN101368265B (en) | 2008-06-17 | 2008-06-17 | Gas path system of apparatus for preparing gallium nitride thin film |
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| CN101368265A true CN101368265A (en) | 2009-02-18 |
| CN101368265B CN101368265B (en) | 2010-09-08 |
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| CN200810028855XA Expired - Fee Related CN101368265B (en) | 2008-06-17 | 2008-06-17 | Gas path system of apparatus for preparing gallium nitride thin film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102471061A (en) * | 2009-09-04 | 2012-05-23 | 大阳日酸株式会社 | Method and apparatus for supplying hydrogen selenide mixed gas for solar cell |
| CN103882409A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Source conveying gas path device with adjustable mixing ratio |
| CN105161573A (en) * | 2015-09-17 | 2015-12-16 | 浙江师范大学 | System and method for preparing hydrogenated nanocrystalline silicon film solar cell |
-
2008
- 2008-06-17 CN CN200810028855XA patent/CN101368265B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102471061A (en) * | 2009-09-04 | 2012-05-23 | 大阳日酸株式会社 | Method and apparatus for supplying hydrogen selenide mixed gas for solar cell |
| CN102471061B (en) * | 2009-09-04 | 2014-09-24 | 大阳日酸株式会社 | Method and apparatus for supplying hydrogen selenide mixed gas for solar cell |
| TWI498152B (en) * | 2009-09-04 | 2015-09-01 | Taiyo Nippon Sanso Corp | Supplying method and supplier of hydrogen selenide-mixed gas |
| CN103882409A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Source conveying gas path device with adjustable mixing ratio |
| CN103882409B (en) * | 2014-03-13 | 2016-04-20 | 中国科学院半导体研究所 | The adjustable gas path device of source conveying ratio of mixture |
| CN105161573A (en) * | 2015-09-17 | 2015-12-16 | 浙江师范大学 | System and method for preparing hydrogenated nanocrystalline silicon film solar cell |
| CN105161573B (en) * | 2015-09-17 | 2017-03-22 | 浙江师范大学 | System and method for preparing hydrogenated nanocrystalline silicon film solar cell |
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| Publication number | Publication date |
|---|---|
| CN101368265B (en) | 2010-09-08 |
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