CN101359509B - 一次性可编程存储器电路及其编程和读取方法 - Google Patents
一次性可编程存储器电路及其编程和读取方法 Download PDFInfo
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- CN101359509B CN101359509B CN2008101193078A CN200810119307A CN101359509B CN 101359509 B CN101359509 B CN 101359509B CN 2008101193078 A CN2008101193078 A CN 2008101193078A CN 200810119307 A CN200810119307 A CN 200810119307A CN 101359509 B CN101359509 B CN 101359509B
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- 238000000034 method Methods 0.000 title claims abstract description 27
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 230000006870 function Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 11
- 238000013500 data storage Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
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- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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CN105243342B (zh) * | 2015-10-08 | 2019-02-19 | 浪潮(北京)电子信息产业有限公司 | 一种基于一次可编程查找表的标准单元逻辑电路 |
CN106775891A (zh) * | 2016-12-29 | 2017-05-31 | 合肥宏晶微电子科技股份有限公司 | 一种适用于OTPMemory内实现IAP功能的技术方法 |
CN111404686B (zh) * | 2020-04-21 | 2023-10-10 | 珠海创飞芯科技有限公司 | 一种基于otp存储阵列的puf密钥生成***和方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1277723A (zh) * | 1997-09-01 | 2000-12-20 | 薄膜电子有限公司 | 只读存储器和只读存储器件 |
CN1522445A (zh) * | 2001-06-29 | 2004-08-18 | �Ҵ���˾ | 通过将位线保持在固定电势来早写入存储器的***和方法 |
CN1521854A (zh) * | 2003-01-24 | 2004-08-18 | ���ǵ�����ʽ���� | 电可擦除可编程只读存储器单元及其制造方法 |
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CN1277723A (zh) * | 1997-09-01 | 2000-12-20 | 薄膜电子有限公司 | 只读存储器和只读存储器件 |
CN1522445A (zh) * | 2001-06-29 | 2004-08-18 | �Ҵ���˾ | 通过将位线保持在固定电势来早写入存储器的***和方法 |
CN1521854A (zh) * | 2003-01-24 | 2004-08-18 | ���ǵ�����ʽ���� | 电可擦除可编程只读存储器单元及其制造方法 |
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