CN101355137A - 相变存储器装置及其制造方法 - Google Patents
相变存储器装置及其制造方法 Download PDFInfo
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- CN101355137A CN101355137A CNA2007101369193A CN200710136919A CN101355137A CN 101355137 A CN101355137 A CN 101355137A CN A2007101369193 A CNA2007101369193 A CN A2007101369193A CN 200710136919 A CN200710136919 A CN 200710136919A CN 101355137 A CN101355137 A CN 101355137A
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CN2007101369193A CN101355137B (zh) | 2007-07-23 | 2007-07-23 | 相变存储器装置及其制造方法 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858961B2 (en) * | 2008-06-03 | 2010-12-28 | Industrial Technology Research Institute | Phase change memory devices and methods for fabricating the same |
CN102122700A (zh) * | 2011-01-06 | 2011-07-13 | 上海新储集成电路有限公司 | 一种双轨相变存储器及其制备方法 |
CN102237488A (zh) * | 2010-04-20 | 2011-11-09 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器器件单元及制备方法 |
CN102870215A (zh) * | 2010-04-19 | 2013-01-09 | 美光科技公司 | 垂直晶体管相变存储器 |
CN101997082B (zh) * | 2009-08-24 | 2013-01-23 | 旺宏电子股份有限公司 | 自会聚底部电极环 |
CN103531710A (zh) * | 2013-10-22 | 2014-01-22 | 中国科学院上海微***与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN107394039A (zh) * | 2009-04-09 | 2017-11-24 | 高通股份有限公司 | 相变随机存取存储器的菱形式四电阻器单元 |
CN109216543A (zh) * | 2017-07-06 | 2019-01-15 | 三星电子株式会社 | 半导体器件 |
CN107482118B (zh) * | 2015-07-07 | 2020-04-03 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体的制备方法 |
CN111463345A (zh) * | 2020-03-26 | 2020-07-28 | 中国科学院上海微***与信息技术研究所 | 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元 |
CN112420922A (zh) * | 2020-11-20 | 2021-02-26 | 湖北大学 | 一种基于钛银合金的低功耗cbram器件及其制备方法和应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501111B1 (en) * | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
CN100514663C (zh) * | 2005-12-30 | 2009-07-15 | 财团法人工业技术研究院 | 半导体存储元件、相变存储元件及其制造方法 |
-
2007
- 2007-07-23 CN CN2007101369193A patent/CN101355137B/zh active Active
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858961B2 (en) * | 2008-06-03 | 2010-12-28 | Industrial Technology Research Institute | Phase change memory devices and methods for fabricating the same |
CN107394039A (zh) * | 2009-04-09 | 2017-11-24 | 高通股份有限公司 | 相变随机存取存储器的菱形式四电阻器单元 |
CN107394039B (zh) * | 2009-04-09 | 2019-07-30 | 高通股份有限公司 | 相变随机存取存储器的菱形式四电阻器单元 |
CN101997082B (zh) * | 2009-08-24 | 2013-01-23 | 旺宏电子股份有限公司 | 自会聚底部电极环 |
CN102870215A (zh) * | 2010-04-19 | 2013-01-09 | 美光科技公司 | 垂直晶体管相变存储器 |
CN102237488A (zh) * | 2010-04-20 | 2011-11-09 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器器件单元及制备方法 |
CN102237488B (zh) * | 2010-04-20 | 2013-12-04 | 中国科学院上海微***与信息技术研究所 | 一种相变存储器器件单元及制备方法 |
CN102122700A (zh) * | 2011-01-06 | 2011-07-13 | 上海新储集成电路有限公司 | 一种双轨相变存储器及其制备方法 |
CN102122700B (zh) * | 2011-01-06 | 2014-11-26 | 上海新储集成电路有限公司 | 一种双轨相变存储器及其制备方法 |
CN103531710B (zh) * | 2013-10-22 | 2016-03-16 | 中国科学院上海微***与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN103531710A (zh) * | 2013-10-22 | 2014-01-22 | 中国科学院上海微***与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN107482118B (zh) * | 2015-07-07 | 2020-04-03 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体的制备方法 |
CN109216543A (zh) * | 2017-07-06 | 2019-01-15 | 三星电子株式会社 | 半导体器件 |
CN109216543B (zh) * | 2017-07-06 | 2023-10-24 | 三星电子株式会社 | 半导体器件 |
CN111463345A (zh) * | 2020-03-26 | 2020-07-28 | 中国科学院上海微***与信息技术研究所 | 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元 |
CN112420922A (zh) * | 2020-11-20 | 2021-02-26 | 湖北大学 | 一种基于钛银合金的低功耗cbram器件及其制备方法和应用 |
CN112420922B (zh) * | 2020-11-20 | 2023-12-19 | 湖北大学 | 一种基于钛银合金的低功耗cbram器件及其制备方法和应用 |
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