CN101349780A - Plane annular micro-cavity - Google Patents
Plane annular micro-cavity Download PDFInfo
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- CN101349780A CN101349780A CNA2008100793309A CN200810079330A CN101349780A CN 101349780 A CN101349780 A CN 101349780A CN A2008100793309 A CNA2008100793309 A CN A2008100793309A CN 200810079330 A CN200810079330 A CN 200810079330A CN 101349780 A CN101349780 A CN 101349780A
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Abstract
The invention relates to a micro optical resonator as an optical micro cavity, in particular to a plane annular micro cavity, for resolving the problem of the prior art which can not attain ultrahigh quality factor Q of produced annular micro cavity. The production method comprises: 1, thermally growing a silica layer on a silicon substrate, washing via deionized water and acetone, drying via nitrogen gas, baking in a high temperature oven; 2, using etching technique to etch the silica layer on the silicon substrate into a disc form; 3, processing isotropic etching on the silicon substrate to form a smooth table columns under the disc silica layer; 4, using a laser via a Gaussian heat distribution mode and a convergence lens to thermally treat the surface of the disc silica layer to collapse the center surface of the disc silica layer to form an annular chamber. The plane annular micro cavity has good optical property, optical storage function, ultrahigh quality factor and wide application in the fields of nonlinear optics, photonics, quantum electrodynamics and high sensitivity micro optics elements and the like.
Description
Technical field
The present invention relates to miniature optical resonant device-optical microcavity, specifically is the plane annular micro-cavity with high quality factor that a kind of MEMS of employing micro fabrication and Laser Micro-Machining technology combine and processes.
Background technology
Optical microcavity is meant the miniature optical resonant device that size can be comparable with optical wavelength, is a field of enlivening very much in the research of condensed state mesoscopic physics in recent years.The semiconductor optical microcavity that has occurred at present can be summed up as following three kinds of typical cavity configurations substantially: Fabry-Perot (F-P) microcavity, " Whispering-gallery-mode " be type microcavity, photonic crystal defect type microcavity (WG).Wherein, " Whispering-gallery-mode " (whispering gallery mode) is that light wave curved interface in the chamber is when propagating, total reflection can take place, thereby formed the pattern of propagating along in the half-wavelength scope of interface with higher figure of merit Q value, the cavity configuration of this pattern has very strong local effect to the electromagnetic wave that enters in the chamber, energy in the chamber has only a very little part to leak out outside the cavity to cause damage, be a kind of quite successful high Q value optical microcavity.Therefore, have good application prospects in many applications, such as: high sensor, low threshold laser or the like.
Along with the development of MEMS Micrometer-Nanometer Processing Technology, people have broken traditional research tool of forms such as F-P chamber, microballoon chamber, begin to come Design and Machining can launch the optical microcavity of research in application in conjunction with new Micrometer-Nanometer Processing Technology by every means.Therefore, processing simple relatively, have a selection of being convenient to become people's research with " Whispering-gallery-mode " type annular micro-cavity of the unique texture of miscellaneous part coupling.Each research unit has carried out multiple trial, some progress that also obtain at aspects such as material selection, job operations.For example: the polymkeric substance annular microcavity that Washington, DC university makes with the photobleaching method, the SIO that Univ Michigan-Ann Arbor USA is made on metallic substrates with nanometer embossing
2Annular micro-cavity is selected the annular micro-cavity of SOI materials processing in addition, and the way with photoetching, corrosion on silicon base is made annular micro-cavity, or the like.
The annular micro-cavity that present application said method processes has carried out several studies at aspects such as sensor, wave filters, although after deliberation, facts have proved that existing annular micro-cavity quality factor q value is higher, but fail to obtain ultra high quality factor Q value, and then limited it and applied.The reason that can't obtain ultra high quality factor Q value mainly contains following 2 points: 1, the cross section of the annular micro-cavity that obtains of above-mentioned each job operation processing is " square " (as shown in Figure 4), this structure can increase the inherent loss of light among communication process, is unfavorable for the acquisition of ultra high quality factor Q value annular micro-cavity; 2, the surfaceness of the annular micro-cavity of above-mentioned each job operation processing gained is higher, the storage time of having limited light to a certain extent, has reduced the quality factor q value.
Summary of the invention
The present invention fails to obtain ultra high quality factor Q value in order to solve the annular micro-cavity that makes with existing job operation processing, and then limits the problem that it is applied, and plane annular micro-cavity a kind of suitable integrated production, that have ultra high quality factor Q value is provided.
The present invention adopts following technical scheme to realize: plane annular micro-cavity makes with the following steps method:
1, utilizes silicon thermal oxidation technology heat on silica-based to grow the silicon dioxide layer that thickness is 2～5 μ m, after cleaning with deionized water and acetone then,, in high temperature furnace, toasted 5～10 minutes in 100～150 ℃ of high temperature ranges again with the nitrogen oven dry;
2, utilize etching technics to be etched into the silicon dioxide layer on silica-based discoid; Wherein, the size of disk has determined the size of annular micro-cavity to be processed.
3, utilize the body bulk silicon process to the silica-based isotropic etch that carries out below discoid silicon dioxide layer, to form smooth round table-like pillar;
4, adopt laser instrument through plus lens discoid silicon dioxide layer to be carried out surface heat and handle, make the discoid silicon dioxide layer center surface formation ring-shaped cavity that subsides, obtain described plane ring-type microcavity with Gauss's heat distribution pattern.
Compared with prior art, the present invention adopts laser instrument with Gauss's heat distribution pattern discoid silicon dioxide layer to be carried out surface heat and handles, rely on surface tension to form ring-shaped cavity thereby discoid silicon dioxide layer center surface is subsided at disk border, compare the loss that has reduced energy with the square-section annular micro-cavity; And the thickness of annular micro-cavity is at 3～5 μ m, makes inner optical field distribution compact more thereby have an extremely low mode volume; When discoid silicon dioxide layer center subsides, disk border begins to melt, and forms the super surface of ring cavity under surface tension effects, has improved the surface smoothness of cavity, reduced because therefore the scattering of light loss that rough surface brings has high quality factor.Simultaneously, below plane annular micro-cavity, process round table-like pillar following advantage is arranged: 1, support the annular micro-cavity cavity with the body bulk silicon process, 2, annular micro-cavity is raised the optical coupled that certain altitude helps annular micro-cavity and other optical waveguide components, 3, make the annular micro-cavity bottom unsettled, thereby avoided the influence of substrate the microcavity optical characteristics.Therefore, the existing annular micro-cavity of plane annular micro-cavity of the present invention has more stable, higher quality factor.And because its integrated method for comprehensive processing support batch process, thereby guaranteed the unitarity of the properties of product of batch Design and Machining together.Plane annular micro-cavity of the present invention with its good performance by with the optically-coupled of coupled waveguide can widespread use on micro-optical devices such as high sensor, wave filter.Described silicon thermal oxidation technology, etching technics, body bulk silicon process are existing known technologies.
Carry out transmission spectral analysis to plane annular micro-cavity of the present invention with the annular micro-cavity (diameter 90 μ m) of nanometer embossing preparation respectively, get the transmitted light spectrogram shown in Fig. 3,5, the quality factor q that can roughly be extrapolated this annular micro-cavity by the transmitted light spectrogram (as shown in Figure 3) of plane annular micro-cavity of the present invention is 10
8, the free spectrum width is 5.65nm; And can analyze to such an extent that the quality factor q value of this annular micro-cavity is about 10 with the transmitted light spectrogram (as shown in Figure 5) of the annular micro-cavity of nanometer embossing preparation
4The quality factor of plane annular micro-cavity of the present invention obviously exceed 4 orders of magnitude of annular micro-cavity with nanometer embossing preparation, have proved absolutely with the combine advantage of the plane annular micro-cavity that processes of MEMS micro fabrication and Laser Micro-Machining technology.
The present invention has the quality factor of good optical characteristic, optical memory effect, superelevation, is with a wide range of applications in fields such as nonlinear optics, photonics, quantum electrodynamics, high sensitivity micro-optical devices.
Description of drawings
Fig. 1 is the manufacturing procedure synoptic diagram of plane annular micro-cavity of the present invention;
Fig. 2 is the object construction figure after plane annular micro-cavity of the present invention amplifies;
Fig. 3 is the transmitted light spectrogram of plane annular micro-cavity of the present invention (diameter 90 μ m);
Fig. 4 is with the object construction figure after the annular micro-cavity amplification of nanometer embossing preparation;
Fig. 5 is the transmitted light spectrogram with the annular micro-cavity (diameter 90 μ m) of nanometer embossing preparation;
Among the figure: 1-is silica-based; The 2-silicon dioxide layer; The 3-plane annular micro-cavity.
Embodiment
Plane annular micro-cavity makes with the following steps method:
1, utilizes silicon thermal oxidation technology heat on silica-based 1 to grow the silicon dioxide layer 2 that thickness is 2～5 μ m, after cleaning with deionized water and acetone then,, in high temperature furnace, toasted 5～10 minutes in 100～150 ℃ of high temperature ranges again with the nitrogen oven dry;
2, utilize etching technics to be etched into the silicon dioxide layer 2 on silica-based 1 discoid; Wherein, the size of disk has determined the size of annular micro-cavity to be processed.
3, utilize the body bulk silicon process to carry out isotropic etch below discoid silicon dioxide layer 2, to form smooth round table-like pillar to silica-based 1;
4, adopt laser instrument through plus lens discoid silicon dioxide layer 2 to be carried out surface heat and handle, make the discoid silicon dioxide layer 2 center surfaces formation ring-shaped cavity that subsides, obtain described plane ring-type microcavity 3 with Gauss's heat distribution pattern.
During concrete enforcement, silica-based selection＜110 in the step 1〉silicon chip in crystal orientation, silica-based diameter is selected and indefinite, and difference only is the large diameter silica-based big choice that has in scribing.Wherein, " after deionized water and acetone cleaning, with the nitrogen oven dry, toasting 5～10 minutes in 100～150 ℃ of high temperature ranges in high temperature furnace " is the conventional processing means after the silicon thermal oxidation processes again.
In the step 2, the etching technics of utilization can adopt reactive ion beam etching (RIBE) technology or photoetching process or other etching technics, and as adopting photoetching process, its photoresist is selected to be advisable for No. 1813 of U.S. Shipley company.Glue spreading method can be an one in rotary process, spraying process and the czochralski method.Tackifier are at first selected hexam ethylcyclotrisiloxane HMDS, also can be trimethyl silyl diethylamide TMSDEA or hexamethyl cyclotrisiloxane HMCTS.
In the step 3, adopt xenon fluoride XeF
2Under the 400Pa pressure condition to the silica-based isotropic etch that carries out.Why select xenon fluoride XeF
2Be because: 1, xenon fluoride XeF
2Not influence of silicon dioxide layer to silicon substrate surface; 2, adopt xenon fluoride XeF
2To the silica-based isotropic etch that carries out, more help forming smooth round table-like pillar, this shape pillar has guaranteed the performance of annular micro-cavity to a certain extent.Wherein, the time length of corrosion is decided by the height of the silicon pillar that desire is processed and the contact area of annular micro-cavity and pillar.In corrosion process, to note the drying of environment, xenon fluoride XeF
2Produce the discoid silicon dioxide layer that hydrogen fluoride HF damages silicon substrate surface with water interaction meeting.In this step, remove employing xenon fluoride XeF
2Outside corroding, also can adopt xenon fluoride XeF
2The mode that combines with other buffer gass.
Laser instrument in the step 4 adopts high power CO
2Laser instrument, perhaps infrared laser, even non-laser instrument-hydrogen flame machine; The output mode of laser instrument is basic mode (being Gauss's heat distribution pattern) preferably, and laser energy is wanted to reach 100MW/m after converging
2More than; The time length of processing is relevant with the focal length of the plus lens of selection; For fixing plus lens, when processing different-diameter annular micro-cavity, can look for suitable processing stand by the distance of regulating between plus lens and the machined surface-discoid silicon dioxide layer; Will regulate realization processing laser by conventional double light path in the process of processing aims at the accurate of discoid silicon dioxide layer; Do alignment applications with HeNe laser and point to light, can be other visible lasers also, but require gallium arsenide GaAs or zinc selenide ZeSe lens (CO
2Laser instrument is used lens always) this sensing light there is high transmittance.The length in surface heat processing time is decided by the size of microcavity diameter to be processed, in the energy density at processing stand place.Adopt high power CO as laser instrument
2Laser instrument, recommendation use the DIAMOND series K-500 laser instrument of U.S. COHERENT company, and regulating dutycycle is that processing in 7/1000 o'clock had good processing effect in 1800 seconds.
Claims (1)
1, a kind of plane annular micro-cavity is characterized in that: make with the following steps method:
1), utilizing silicon thermal oxidation technology to go up heat in silica-based (1) grows the silicon dioxide layer that thickness is 2～5 μ m (2), after cleaning with deionized water and acetone then, with the nitrogen oven dry, toasted 5～10 minutes in 100～150 ℃ of high temperature ranges in high temperature furnace again;
2), utilize etching technics to be etched into the silicon dioxide layer (2) on silica-based (1) discoid;
3), utilize the body bulk silicon process that silica-based (1) is carried out isotropic etch to form smooth round table-like pillar in discoid silicon dioxide layer (2) below;
4), adopt laser instrument through plus lens discoid silicon dioxide layer (2) to be carried out surface heat to handle with Gauss's heat distribution pattern, make discoid silicon dioxide layer (2) the center surface formation ring-shaped cavity that subsides, obtain described plane ring-type microcavity (3).
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101957479A (en) * | 2010-07-27 | 2011-01-26 | 中北大学 | Method for realizing output of optical microcavity coupling system by temperature modulation and coupling structure thereof |
| CN102005696A (en) * | 2010-09-30 | 2011-04-06 | 中国科学院半导体研究所 | Silicon-based photonic crystal channel-shaped waveguide micro-cavity laser |
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN104466664A (en) * | 2013-09-22 | 2015-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nanometer silicon concentric micro ring core er-doped laser device and manufacturing method thereof |
| CN106772721A (en) * | 2016-12-19 | 2017-05-31 | 厦门大学 | A kind of preparation method of high-quality-factor echo wall die Microsphere Cavities |
| CN108550526A (en) * | 2018-03-29 | 2018-09-18 | 上海集成电路研发中心有限公司 | A method of improving semiconductor fin surface roughness |
| CN109149365A (en) * | 2018-10-15 | 2019-01-04 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver selenide quantum dot |
| CN110277730A (en) * | 2019-06-20 | 2019-09-24 | 中国科学院半导体研究所 | A kind of integrated Brillouin scattering laser |
| CN111313218A (en) * | 2020-02-20 | 2020-06-19 | 南京大学 | Preparation method of microsphere cavity |
| CN112269223A (en) * | 2020-12-22 | 2021-01-26 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Silicon-based wedge-shaped waveguide micro-ring cavity and preparation method thereof |
Family Cites Families (1)
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| CN100487976C (en) * | 2006-05-25 | 2009-05-13 | 中国科学院半导体研究所 | Loop micro-cavity wave-guide filter for eliminating distributed mode coupling and its making method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101957479A (en) * | 2010-07-27 | 2011-01-26 | 中北大学 | Method for realizing output of optical microcavity coupling system by temperature modulation and coupling structure thereof |
| CN101957479B (en) * | 2010-07-27 | 2011-10-05 | 中北大学 | Method for realizing output of optical microcavity coupling system by temperature modulation and coupling structure thereof |
| CN102005696A (en) * | 2010-09-30 | 2011-04-06 | 中国科学院半导体研究所 | Silicon-based photonic crystal channel-shaped waveguide micro-cavity laser |
| CN102005696B (en) * | 2010-09-30 | 2011-10-12 | 中国科学院半导体研究所 | Silicon-based photonic crystal channel-shaped waveguide micro-cavity laser |
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN104466664A (en) * | 2013-09-22 | 2015-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nanometer silicon concentric micro ring core er-doped laser device and manufacturing method thereof |
| CN106772721A (en) * | 2016-12-19 | 2017-05-31 | 厦门大学 | A kind of preparation method of high-quality-factor echo wall die Microsphere Cavities |
| CN106772721B (en) * | 2016-12-19 | 2019-02-01 | 厦门大学 | A kind of preparation method of high-quality-factor echo wall die Microsphere Cavities |
| CN108550526A (en) * | 2018-03-29 | 2018-09-18 | 上海集成电路研发中心有限公司 | A method of improving semiconductor fin surface roughness |
| CN109149365A (en) * | 2018-10-15 | 2019-01-04 | 南京邮电大学 | Include micro- disk cavity laser and preparation method thereof of silver selenide quantum dot |
| CN110277730A (en) * | 2019-06-20 | 2019-09-24 | 中国科学院半导体研究所 | A kind of integrated Brillouin scattering laser |
| CN110277730B (en) * | 2019-06-20 | 2020-11-10 | 中国科学院半导体研究所 | Integrated Brillouin scattering laser |
| CN111313218A (en) * | 2020-02-20 | 2020-06-19 | 南京大学 | Preparation method of microsphere cavity |
| CN112269223A (en) * | 2020-12-22 | 2021-01-26 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Silicon-based wedge-shaped waveguide micro-ring cavity and preparation method thereof |
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