CN101324472A - Method for manufacturing embedded type multi-layer compound film cutting temperature sensor - Google Patents
Method for manufacturing embedded type multi-layer compound film cutting temperature sensor Download PDFInfo
- Publication number
- CN101324472A CN101324472A CNA2008100123561A CN200810012356A CN101324472A CN 101324472 A CN101324472 A CN 101324472A CN A2008100123561 A CNA2008100123561 A CN A2008100123561A CN 200810012356 A CN200810012356 A CN 200810012356A CN 101324472 A CN101324472 A CN 101324472A
- Authority
- CN
- China
- Prior art keywords
- film
- nicr
- nisi
- thermocouple
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for manufacturing an embedded multi-layer composite thin-film cutting temperature sensor, in particular to a method for measuring the transient cutting temperature of a cutter point during cutting and manufacturing, and belongs to the temperature sensor field. SiO2 insulating film deposition on a cutter body is carried out for a plurality of times, so as to form a multi-layer composite thin film; then a thin-film thermocouple is formed through sputtering deposition of a NiCr thin-film electrode and a NiSi thin-film electrode; and then the prepared thin-film thermocouple is embedded into a protective layer. The radio-frequency reactive unbalanced magnetron sputtering technology is enhanced by adopting a microwave ECR plasma; the prepared thin-film thermocouple is embedded into the protective layer, so as to be prepared into an embedded multi-layer composite thin-film temperature measurement sensor integrating the cutting and the temperature measurement. The sensor has the advantages of long service life and cost-effectiveness. The thermocouple has the advantages of minimum size of a hot end and short response time, thereby achieving the submicrosecond level. A compensation conducting wire is hidden in a cutter head, so that the anti-interference capability is strong. Therefore, the cutting temperature of the cutter point can be measured rapidly, accurately and stably by the method.
Description
Technical field
The invention belongs to the temperature sensor field, the measuring method of cutter point of a knife place transient cutting temp of cutting when relating to cut.
Background technology
Owing to produce a large amount of heat in metal cuttings in the high-speed machining process, cutting temperature is raise, directly influence workpiece thermal deformation, machined surface quality, cutter rake face built-up edge generation and disappear and cutter life etc., so monitor crudy and the cutter duty that cutting temperature can obtain workpiece quickly and accurately.
The method of at present more common measurement cutting temperature has: natural thermocouple, artificial thermopair, far infrared radiation method, metal micro structure and microhardness changing method etc.What natural thermocouple method was measured is the medial temperature of cutting zone, and the cutting temperature of utilizing this method to record is easy to be reliable.But a kind of cutter material of every change or workpiece material just need to demarcate again.Artificial thermopair can only be measured the temperature from rake face a distance point, and can not directly measure the temperature on the rake face.The far infrared radiation method is applicable to remote noncontact monitoring object surface temperature under the rugged surroundings, and above-mentioned numerous measuring methods all each have its relative merits and suitable application area, but all can't directly measure the cutting temperature at point of a knife place.Because cutting zone is hidden is in semi-closed state between point of a knife and workpiece, common temp measuring method can't touch, can only be by setting up three-dimensional heat conduction model, and Gauss's thermal source formula is for example derived the temperature at point of a knife place.Though temperature that obtains the point of a knife place and thermograde that a large amount of sunykatuib analyses and heat conduction model result of calculation can be similar to, all there is many-sided hypothesis in the foundation of all these models, and the precision of analysis result is difficult to be guaranteed.
Film thermocouple is the temperature sensor that a kind of advanced person's of rise in modern age measurement transient temperature changes, and is widely applied to the temperature survey of firearm chamber inwall, internal combustion engine end face, forging film surface and shuttle motor inwall.US National Aeronautics and Space Administration's Lewis Research Center is devoted for years in the applied research of film thermocouple under rugged surroundings such as high temperature, high pressure, chemical corrosion.Through years of development, film thermocouple is no matter be that size or volume are all very small, and the response time is extremely short even tens ns are only arranged, and can stablize to such an extent that work reliably and with long-term under rugged surroundings.
At present the research of the cutting temperature during applied film thermocouple measurement cutting metal is fewer.People's deposit film thermopairs on the rake face of sintex such as Ali Basti of Japan, sputter HfO on the film thermocouple
2As insulation course, cutting such as sputtered with Ti AlSiN coating more afterwards.But sintex application percentage in factory is smaller, and the wearing and tearing of rake face are more violent relatively, makes two coatings on the thin film thermoelectric double-layer, can hinder the transmission of heat in metal cutting, reduces the measuring accuracy of sensor.And hot junction has certain distance from point of a knife, not the cutting temperature at energy measurement point of a knife place.The people such as Ceng Qiyong of sensing observing and controlling research institute of Dalian University of Technology adopt branch blade type structure, make film thermocouple in last lower knife body junction, and hot junction directly is produced on the point of a knife.Though this film thermocouple can be measured the cutting temperature at point of a knife place accurately, it is soft nonmetal to divide blade structure only to be fit to cutting, and the crack of branch blade is filled in smear metal during cutting metal, and wearing and tearing thermoelectricity occasionally makes the thermopair short circuit.Therefore this paper invents a kind ofly based on hard alloy substrate, makes SiO on knife face behind the cutter
2Multilayer insulating film, the sputtered film thermopair deposits Si at last afterwards
3N
4Protective seam is embedded in the sensor film thermocouple.The hot junction of film thermocouple directly plating is put at the point of a knife place, can measure the cutting temperature at point of a knife place accurately; Be produced on behind the cutter on the knife face, it is slight relatively to wear and tear, and makes protective seam again, more can prolong the life-span of sensor.
Summary of the invention
The technical problem to be solved in the present invention is to develop a kind of embedded film thermocouple thermometric cutter sensor, and collection cutting, thermometric are one, can be used to measure quickly and accurately the cutting temperature at point of a knife place.Point of a knife place's temperature survey in the time of can solving the cutting explosive material owing to use damascene structures effectively to protect sensor, can be convenient for measuring the high-speed cutting temperature of thin-walled non-ferrous alloy.
The preparation method of a kind of embedded type multi-layer compound film cutting temperature sensor of the technical solution used in the present invention, the step of its making is as follows:
1, utilize accurate line cutting numerically-controlled machine high-speed steel or carbide cutter tool piece to be processed into the cutter hub 1 of standard clamped cutting bit sheet form, leave a groove C in cutter hub 1 bottom, back knife face A sanding and polishing with cutter hub (1), use the diamond paste looking-glass finish of granularity at last less than 0.1 μ m, cutter hub 1 is put into acetone, alcohol or resistance respectively greater than 13M Ω deionized water, use ultrasonic cleaning, put into vacuum chamber after cutter hub 1 usefulness nitrogen is dried up;
2, adopt the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, operation in the following order: highly purified Si target is installed, is vacuumized, plasma sputtering cleans, and sputtering sedimentation cools off with stove; At last at cutter hub 1 back knife face A sputtering sedimentation ground floor SiO
2 Dielectric film 2; To make SiO
2The cutter hub 1 of dielectric film 2 is put into the alcohol ultrasonic cleaning, and then puts vacuum chamber into, and sputter is twice under identical parameters; I.e. sputter three times under identical parameters forms three layers of compound inslation film;
3, unloading Si target is installed the NiCr target; Give and made SiO
2The cutter hub 1 of dielectric film 2 is installed the mask of NiCr, covers the position that does not need plated film; Adopt the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, sputtering sedimentation NiCr membrane electrode 3 after the stove cooling, takes out and puts into the alcohol ultrasonic cleaning; Unloading NiCr target is installed the NiSi target, and is taken off the NiCr mask, replaces with the NiSi mask, adopts the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, continues deposition NiSi film 4; Form the hot junction B of film thermocouple by NiCr and NiSi double-layer films at the point of a knife place;
4, the Si target is installed, on the cold junction of NiCr membrane electrode 3, is made the mask of a circle, also make the mask of a circle at the cold junction of NiSi film 4 simultaneously; Making SiO
2On the high-speed steel or wimet cutter hub 1 of dielectric film 2, NiCr film 3, NiSi film 4, utilize the microwave ECR plasma source to strengthen the radio frequency reaction non-balance magnetically controlled sputter and cover Si
3N
4 Protective seam 5 is embedded into the film thermocouple of making in the protective seam; Remove above-mentioned two masks, the cold junction of membrane electrode exposes out;
5, with the cold junction exposed locations bonding of high temperature resistant conductive silver glue 6 with NiCr thermocouple wire 7 with the NiCr film 3 of φ 0.2mm; With the cold junction exposed locations bonding of NiSi thermocouple wire 8 with NiSi film 4;
6, NiCr thermocouple wire 7 and NiSi thermocouple wire 8 are drawn by groove C, groove C insulating gel 9 embeddings, and the cutting of formation collection, thermometric are the embedded type multi-layer compound film temperature probe of one at last.
Remarkable result of the present invention: the cutting of embedded film thermocouple thermometric cutter set of sensors, thermometric be in one, be sensor be again actuator.Embedded film thermocouple skin has high hardness spray coating protection, the serviceable life of having improved sensor, good economy performance.The pyrometer fire-end size is minimum, and the response time is short, can reach the submicrosecond level.Compensating wire is hidden in the cutter head, and antijamming capability is strong.Therefore can fast, accurately, stably measure the cutting temperature at point of a knife place.
Description of drawings
Accompanying drawing 4 film thermocouple temperature sensors and knife bar wiring layout.Wherein 1-high-speed steel or wimet cutter hub, 7-NiCr compensating wire, 8-NiSi compensating wire, 10-knife bar, 11-be by cut spare, 12-pressing plate, 13-mica sheet, 14-plate washer.
Embodiment
Below in conjunction with technical scheme and accompanying drawing, describe specific implementation process of the present invention in detail, it is as follows to make embedded film thermocouple thermometric cutter sensor concrete steps:
The first step: preparation cutter hub 1
When adopting high speed steel material, with accurate wire cutting machine tool high speed steel tool bit is processed into the cutter hub 1 of standard clamped cutting bit sheet form, as shown in Figure 1.Knife face A grinds from coarse to fine with № 240, № 400, № 600, № 800, № 1000 waterproof abrasive papers respectively with cutter hub 1 back, is polished to minute surface with granularity less than the water-soluble diamond paste of 0.1 μ m at last.When adopting Hardmetal materials, the wimet tool section is processed into standard clamped cutting bit sheet form cutter hub 1 with accurate wire cutting machine tool, as shown in Figure 1; Blade 1 back knife face A is used the polishing of high speed boart boart turbine, be polished to minute surface with granularity less than the water-soluble diamond paste of 0.1 μ m at last.During cleaning, earlier with acetone, alcohol wash, use resistance value greater than 13M Ω washed with de-ionized water again high-speed steel or wimet cutter hub 1, it all is to finish on supersonic wave cleaning machine that three steps cleaned, and puts into vacuum chamber after drying up with nitrogen and closes tight.
Second step: carry out SiO
2Insulator film deposition:
1), vacuumize, open slowly to open behind the mechanical pump and take out valve in advance and slightly vacuumize, when vacuum tightness reaches 17Pa, open molecular pump, and close and take out valve in advance, the molecular pump rotating speed begins to increase, until 24000 rev/mins, vacuum chamber bled reaches 5.0 * 10 up to vacuum tightness
-3Below the Pa.
2), sputter clean; Open circulating cooling system, regulate D08-3C/ZM triple channel Flow Measurement Display Meter, feeding purity to vacuum chamber is 99.999% Ar gas, and controlling its flow is certain value, open GNL-120 type ECR magnetic field power supply, two power supplys make electric current be approximately 77A about the adjusting vacuum chamber.Open the program control microwave source of MPG-2010C type, programming is set to mode of operation 1, microwave power P=850W, and the time is provided with as required, starts preheated one-section and exports microwave after the time.Open and be added in on-chip SY type 500W radio frequency power source, the self-bias that produces on substrate is for-200V or add dc negative bias voltage, like this Ar
+The high fast direction substrate of ion is carried out sputter clean about 10 minutes to substrate.
3), sputtering sedimentation; Regulate matching capacitance, self-bias is reduced to-90V～-80V between.Feed the O of certain flow
2Gas, its purity are 99.999%, vacuum tightness 1.1 * 10 at this moment
-1This air pressure of Pa is called sputtering pressure.Open the radio frequency power source that is added on the target, regulate matching capacitance, make incident power P
Go into=250W～350W, reflective power P
Instead≤ 5W.On target, form self-bias and be-340V～-370V, at this moment can see the glow discharge phenomenon that vacuum chamber is interior, Ar
+The ion bombarded silicon target, the silicon atom or the atomic group that sputter rush at substrate, at A face and O
2React and generate SiO
2Be deposited on the A surface, form SiO
2 Dielectric film 2.
4), with stove cooling according to the sputtering sedimentation time of setting, microwave source can automatically reset, plated film finishes.Close substrate radio frequency source, silicon target radio frequency source, magnetic field power supply, vacuum meter, molecular pump, O successively
2Gas and Ar gas, push-pull valve, shutdown valve.Molecular pump remains in operation under inertia and damping and effect, treats to close its power supply and circulating water cooling system after it stops.Workpiece can take out with the vacuum chamber cooling in about 2 hours.
The 3rd step: film thermocouple electrode NiCr and NiSi depositing of thin film
The deposition process of thermopair electrode film and SiO
2Thin film deposition is basic identical.Be divided into cleaning, vacuumize, sputter clean, sputtering sedimentation, with five steps of stove cooling.When a utmost point of blade 1 back knife face A deposition thermopair film, to cover up the place that does not need to plate NiCr film 3 with mask earlier; During plating NiSi film 4, need change another kind of target and corresponding mask.Two kinds of masks all form with stainless steel material warp cutting processing and sanding and polishing.Two masks have 1 * 3.5mm at the point of a knife place
2The coincidence zone, be film thermocouple hot junction B behind the plated film herein.Use two little square-masks the pin pad locations of film thermocouple to be covered magnetron sputtering Si
3N
4 Protective seam 5.
The 4th step: embedded film thermometric cutter sensor assembling
With the NiCr compensating wire 7 and membrane electrode 3 exposed pads bonding of high temperature resistant conductive silver glue 6, again with NiSi compensating wire 8 and membrane electrode 4 exposed pads bonding with φ 0.2mm.NiCr compensating wire 7 and NiSi compensating wire 8 are drawn by groove C, and groove C becomes the collection cutting after with insulating gel 9 embeddings, thermometric is the embedded type multi-layer compound film temperature sensor of one; As accompanying drawing 1, shown in the accompanying drawing 2.
During use, cutter head is contained on the pressure type clamped cutting bit bar 10, clamps with pressing plate 12.Insulate with mica sheet 13 between cutter head 1 and the knife bar 10.NiCr compensating wire 7, NiSi compensating wire 8 are drawn from knife bar 10 manufactured holes and groove, with baffle plate 14 sealings.NiCr compensating wire 7, NiSi compensating wire 8 link by twin-core shielding line and amplifying circuit and data acquisition, analyzing and processing link.During cutting, because the heat in metal cutting that produces raises the hot-side temperature of film thermocouple, the thermoelectrical potential in the loop is after subsequent conditioning circuit is handled and amplified.Send into computing machine through the high-speed collection card collection and convert temperature output to.
Claims (1)
1, the method for making of a kind of embedded type multi-layer compound film cutting temperature sensor of the present invention is characterized in that: carry out repeatedly SiO on cutter hub
2Insulator film deposition forms multi-layer compound film, and sputtering sedimentation NiCr membrane electrode (3) is formed film thermocouple with NiSi membrane electrode (4) then, and the film thermocouple of making is embedded in the protective seam, and the step of its making is as follows:
1), utilize accurate line cutting numerically-controlled machine high-speed steel or carbide cutter tool piece to be processed into the cutter hub (1) of standard clamped cutting bit sheet form, leave a groove (C) in cutter hub (1) bottom, back knife face (A) sanding and polishing with cutter hub (1), use the diamond paste looking-glass finish of granularity at last less than 0.1 μ m, cutter hub (1) is put into acetone, alcohol or resistance respectively greater than 13M Ω deionized water, use ultrasonic cleaning, put into vacuum chamber after cutter hub (1) is dried up with nitrogen;
2), adopt the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, operation in the following order: highly purified Si target is installed, is vacuumized, plasma sputtering cleans, and sputtering sedimentation cools off with stove; At last at cutter hub (1) back knife face (A) sputtering sedimentation ground floor SiO
2Dielectric film (2); To make SiO
2The cutter hub (1) of dielectric film (2) is put into the alcohol ultrasonic cleaning, and then puts vacuum chamber into, and sputter is twice under identical parameters; I.e. sputter three times under identical parameters forms three layers of compound inslation film;
3), unload Si target, installation NiCr target; Give and made SiO
2The cutter hub (1) of dielectric film (2) is installed the mask of NiCr, covers the position that does not need plated film; Adopt the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, sputtering sedimentation NiCr membrane electrode (3) after the stove cooling, takes out and puts into the alcohol ultrasonic cleaning; Unloading NiCr target is installed the NiSi target, and is taken off the NiCr mask, replaces with the NiSi mask, adopts the microwave ECR plasma source to strengthen radio frequency reaction non-balance magnetically controlled sputter technology, continues deposition NiSi membrane electrode (4); Form film thermocouple by NiCr membrane electrode (3) and NiSi membrane electrode (4), and form the hot junction (B) of film thermocouple at the point of a knife place by NiCr and NiSi double-layer films;
4), the Si target is installed, on the cold junction of NiCr membrane electrode (3), make the mask of a circle, also make the mask of a circle at the cold junction of NiSi film (4) simultaneously; Making SiO
2On the high-speed steel or wimet cutter hub (1) of dielectric film (2), NiCr film (3), NiSi film (4), utilize the microwave ECR plasma source to strengthen the radio frequency reaction non-balance magnetically controlled sputter and cover Si
3N
4Protective seam (5) is embedded into the film thermocouple of making in the protective seam; Remove above-mentioned two masks, the membrane electrode cold junction partly exposes;
5), with the cold junction exposed locations bonding of high temperature resistant conductive silver glue (6) with NiCr thermocouple wire (7) with the NiCr film (3) of φ 0.2mm; Use high temperature resistant conductive silver glue (6 ') with the cold junction exposed locations bonding of NiSi thermocouple wire (8) simultaneously with NiSi film (4);
6), NiCr thermocouple wire (7) and NiSi thermocouple wire (8) draw by groove (C), groove (C) is with insulating gel (9) embedding, makes the collection cutting at last, thermometric is the embedded type multi-layer compound film temperature probe of one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810012356A CN100582698C (en) | 2008-07-14 | 2008-07-14 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810012356A CN100582698C (en) | 2008-07-14 | 2008-07-14 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101324472A true CN101324472A (en) | 2008-12-17 |
| CN100582698C CN100582698C (en) | 2010-01-20 |
Family
ID=40188100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810012356A Expired - Fee Related CN100582698C (en) | 2008-07-14 | 2008-07-14 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100582698C (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819071A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Film thermocouple and manufacturing method thereof |
| CN101819074A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Diaphragm type heat-flow density sensor and manufacturing method thereof |
| CN102419217A (en) * | 2011-08-22 | 2012-04-18 | 北京大学 | Metal film micron-scale thermocouple device |
| CN102539004A (en) * | 2011-12-23 | 2012-07-04 | 重庆市伟岸测器制造股份有限公司 | Method of manufacturing temperature sensor |
| CN102749148A (en) * | 2012-07-13 | 2012-10-24 | 中国航天空气动力技术研究院 | Manufacture method for membrane resistance thermometer |
| CN102853930A (en) * | 2012-08-24 | 2013-01-02 | 大连交通大学 | Transient temperature measuring system for diesel engine piston and measuring method thereof |
| CN103560204A (en) * | 2013-10-30 | 2014-02-05 | 清华大学 | Thin film thermocouple for metal cutting temperature measurement and manufacturing method thereof |
| CN103900727A (en) * | 2014-04-18 | 2014-07-02 | 大连交通大学 | Thin film sensor for transient temperature measurement and manufacturing method thereof |
| TWI560022B (en) * | 2012-01-31 | 2016-12-01 | Toshiba Machine Co Ltd | |
| CN106768438A (en) * | 2016-11-18 | 2017-05-31 | 中国计量大学 | A kind of New-type thermocouple measurement end and preparation method thereof |
| CN106975984A (en) * | 2017-05-05 | 2017-07-25 | 大连交通大学 | A kind of intelligent transient state milling thermometric cutter based on film thermocouple |
| CN107063490A (en) * | 2017-04-12 | 2017-08-18 | 大连交通大学 | A kind of sensor and its preparation technology for measurement surface transient temperature |
| CN107806940A (en) * | 2017-09-19 | 2018-03-16 | 江苏师范大学 | A kind of embedded heat-sensitive sensor and thermometry |
| CN108981941A (en) * | 2018-05-08 | 2018-12-11 | 深圳万佳互动科技有限公司 | A kind of anticorrosion thermocouple |
| CN109338290A (en) * | 2018-11-02 | 2019-02-15 | 中国航空工业集团公司上海航空测控技术研究所 | A kind of film temperature sensor for aero engine turbine blades |
| CN110862064A (en) * | 2019-11-05 | 2020-03-06 | 中国航空工业集团公司北京航空精密机械研究所 | Preparation method of low-abrasion self-sensing composite microstructure |
| CN110957294A (en) * | 2019-12-11 | 2020-04-03 | 厦门大学 | Connecting structure of thin film sensor and processing method thereof |
| CN111693167A (en) * | 2020-04-29 | 2020-09-22 | 莆田学院 | Wireless temperature measurement method and device based on embedded film thermocouple cutter |
| CN111979521A (en) * | 2020-08-17 | 2020-11-24 | 航天工程装备（苏州）有限公司 | Composite coating method for realizing high-wear-resistance film thermocouple manufacturing on FSW stirring head |
| CN113188670A (en) * | 2021-04-09 | 2021-07-30 | 浙江工业大学 | Novel high-power laser probe and manufacturing method |
| CN113324669A (en) * | 2021-05-19 | 2021-08-31 | 大连交通大学 | Film thermocouple temperature sensor capable of following abrasion and manufacturing method thereof |
| CN114224426A (en) * | 2021-12-13 | 2022-03-25 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114773038A (en) * | 2022-05-10 | 2022-07-22 | 燕山大学 | Ceramic cutter integrating temperature sensing and cutting functions, and preparation method and application thereof |
| CN116475418A (en) * | 2023-04-28 | 2023-07-25 | 哈尔滨工业大学 | Preparation method of polycrystalline diamond cutter with embedded film thermocouple array |
-
2008
- 2008-07-14 CN CN200810012356A patent/CN100582698C/en not_active Expired - Fee Related
Cited By (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819074A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Diaphragm type heat-flow density sensor and manufacturing method thereof |
| CN101819074B (en) * | 2010-03-16 | 2012-07-04 | 中国飞机强度研究所 | Diaphragm type heat-flow density sensor and manufacturing method thereof |
| CN101819071A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Film thermocouple and manufacturing method thereof |
| CN102419217A (en) * | 2011-08-22 | 2012-04-18 | 北京大学 | Metal film micron-scale thermocouple device |
| CN102419217B (en) * | 2011-08-22 | 2013-04-10 | 北京大学 | Metal film micron-scale thermocouple device |
| CN102539004B (en) * | 2011-12-23 | 2013-12-25 | 重庆市伟岸测器制造股份有限公司 | Method of manufacturing temperature sensor |
| CN102539004A (en) * | 2011-12-23 | 2012-07-04 | 重庆市伟岸测器制造股份有限公司 | Method of manufacturing temperature sensor |
| TWI560022B (en) * | 2012-01-31 | 2016-12-01 | Toshiba Machine Co Ltd | |
| CN102749148B (en) * | 2012-07-13 | 2013-10-30 | 中国航天空气动力技术研究院 | Manufacture method for membrane resistance thermometer |
| CN102749148A (en) * | 2012-07-13 | 2012-10-24 | 中国航天空气动力技术研究院 | Manufacture method for membrane resistance thermometer |
| CN102853930B (en) * | 2012-08-24 | 2014-04-23 | 大连交通大学 | Transient temperature measuring system for diesel engine piston and measuring method thereof |
| CN102853930A (en) * | 2012-08-24 | 2013-01-02 | 大连交通大学 | Transient temperature measuring system for diesel engine piston and measuring method thereof |
| CN103560204A (en) * | 2013-10-30 | 2014-02-05 | 清华大学 | Thin film thermocouple for metal cutting temperature measurement and manufacturing method thereof |
| CN103560204B (en) * | 2013-10-30 | 2016-06-15 | 清华大学 | A kind of metal cutting thermometric film thermocouple and preparation method thereof |
| CN103900727A (en) * | 2014-04-18 | 2014-07-02 | 大连交通大学 | Thin film sensor for transient temperature measurement and manufacturing method thereof |
| CN106768438B (en) * | 2016-11-18 | 2019-06-14 | 中国计量大学 | A kind of production method at thermocouple measurement end |
| CN106768438A (en) * | 2016-11-18 | 2017-05-31 | 中国计量大学 | A kind of New-type thermocouple measurement end and preparation method thereof |
| CN107063490A (en) * | 2017-04-12 | 2017-08-18 | 大连交通大学 | A kind of sensor and its preparation technology for measurement surface transient temperature |
| CN106975984A (en) * | 2017-05-05 | 2017-07-25 | 大连交通大学 | A kind of intelligent transient state milling thermometric cutter based on film thermocouple |
| CN107806940A (en) * | 2017-09-19 | 2018-03-16 | 江苏师范大学 | A kind of embedded heat-sensitive sensor and thermometry |
| CN108981941A (en) * | 2018-05-08 | 2018-12-11 | 深圳万佳互动科技有限公司 | A kind of anticorrosion thermocouple |
| CN108981941B (en) * | 2018-05-08 | 2020-07-28 | 唐山市开平区天诺热电偶厂 | Anti-corrosion thermocouple |
| CN109338290A (en) * | 2018-11-02 | 2019-02-15 | 中国航空工业集团公司上海航空测控技术研究所 | A kind of film temperature sensor for aero engine turbine blades |
| CN110862064A (en) * | 2019-11-05 | 2020-03-06 | 中国航空工业集团公司北京航空精密机械研究所 | Preparation method of low-abrasion self-sensing composite microstructure |
| CN110957294B (en) * | 2019-12-11 | 2021-11-16 | 厦门大学 | Connecting structure of thin film sensor and processing method thereof |
| CN110957294A (en) * | 2019-12-11 | 2020-04-03 | 厦门大学 | Connecting structure of thin film sensor and processing method thereof |
| CN111693167B (en) * | 2020-04-29 | 2022-08-02 | 莆田学院 | Wireless temperature measurement method and device based on embedded film thermocouple cutter |
| CN111693167A (en) * | 2020-04-29 | 2020-09-22 | 莆田学院 | Wireless temperature measurement method and device based on embedded film thermocouple cutter |
| CN111979521A (en) * | 2020-08-17 | 2020-11-24 | 航天工程装备（苏州）有限公司 | Composite coating method for realizing high-wear-resistance film thermocouple manufacturing on FSW stirring head |
| CN113188670A (en) * | 2021-04-09 | 2021-07-30 | 浙江工业大学 | Novel high-power laser probe and manufacturing method |
| CN113188670B (en) * | 2021-04-09 | 2022-12-20 | 浙江工业大学 | High-power laser probe and manufacturing method thereof |
| CN113324669A (en) * | 2021-05-19 | 2021-08-31 | 大连交通大学 | Film thermocouple temperature sensor capable of following abrasion and manufacturing method thereof |
| CN114224426A (en) * | 2021-12-13 | 2022-03-25 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114224426B (en) * | 2021-12-13 | 2023-11-14 | 大连交通大学 | Embedded bone drilling monitoring device for multi-parameter in-situ measurement |
| CN114773038A (en) * | 2022-05-10 | 2022-07-22 | 燕山大学 | Ceramic cutter integrating temperature sensing and cutting functions, and preparation method and application thereof |
| CN114773038B (en) * | 2022-05-10 | 2023-02-17 | 燕山大学 | Ceramic cutter integrating temperature sensing and cutting functions, and preparation method and application thereof |
| CN116475418A (en) * | 2023-04-28 | 2023-07-25 | 哈尔滨工业大学 | Preparation method of polycrystalline diamond cutter with embedded film thermocouple array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100582698C (en) | 2010-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100582698C (en) | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor | |
| CN101575696B (en) | Preparation method of chromium-aluminum-nitrogen film by closed field unbalanced magnetron sputtering | |
| CN104942318B (en) | A kind of intelligent transient state cutting thermometric cutter, preparation method and its temp measuring method | |
| CN110487166A (en) | Thin film strain sensors preparation method | |
| EP0880672A1 (en) | Capacitive gap measurement device | |
| CN104726862A (en) | Metal matrix film sensor with composite insulating layer and preparation method thereof | |
| CN104748876A (en) | High-temperature thin-film thermocouple temperature sensor | |
| CN107131965A (en) | A kind of self refresh film thermocouple sensor for being used to measure transient state axle temperature | |
| Lian et al. | Temperature measurement performance of thin-film thermocouple cutting tool in turning titanium alloy | |
| CN206974557U (en) | A kind of self refresh film thermocouple sensor for being used to measure transient state axle temperature | |
| CN105970177B (en) | A kind of titanium carbide base high temperature solar energy selective absorption coating and preparation method thereof | |
| CN108817880B (en) | A kind of cutting tool and preparation method with inserted thin film temperature sensor | |
| CN102912302B (en) | Method for preparing yttrium/silicon nitride compound coating material on surface of magnesium alloy | |
| CN107245692A (en) | A kind of cemented carbide substrate surfaces preprocess method of PVD coatings | |
| CN104260440B (en) | A kind of nano-composite coating cutter containing aluminum titanium silicon yttrium nitrogen and preparation method thereof | |
| CN102115872A (en) | Preparation method for magnetron sputtering TiMo film on titanium alloy surface | |
| CN101231352A (en) | HfON/BP antireflecting protective film for infrared optical window and manufacture method thereof | |
| CN107012424A (en) | A kind of TiZrB2Hard coat and its preparation method and application | |
| CN106756848B (en) | A kind of Metal Substrate high temperature combined insulation layer and preparation method thereof | |
| CN102095527A (en) | Novel in-situ natural thermocouple calibration method suitable for coated cutting tool | |
| Cui et al. | Fabrication and characterization of NiCr/NiSi functional thin films on temperature measurement of cutter sensor | |
| CN101251421A (en) | Radiation-absorbing composite diamond heat-exchanging diaphragm and manufacture method thereof | |
| CN101246049A (en) | Absorption radiation boron-doped diamond compound film and method for producing the same | |
| Huang et al. | An experimental investigation of temperature distribution in workpiece machined surface layer in turning | |
| JP2007196360A (en) | Cutting tool having lifetime sensor circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100120 Termination date: 20120714 |