CN101320687A - Method for manufacturing conductive film layer - Google Patents
Method for manufacturing conductive film layer Download PDFInfo
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- CN101320687A CN101320687A CNA2007101264401A CN200710126440A CN101320687A CN 101320687 A CN101320687 A CN 101320687A CN A2007101264401 A CNA2007101264401 A CN A2007101264401A CN 200710126440 A CN200710126440 A CN 200710126440A CN 101320687 A CN101320687 A CN 101320687A
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- conductive film
- layer
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- film layer
- barrier layer
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Abstract
The invention discloses a manufacturing method of a conducting film layer, comprising the following steps of: providing a substrate firstly, and forming a patterned photo-resist layer thereon to expose part of the substrate, and then, forming a barrier layer on the patterend photo-resist layer and the exposed substrate, then, undergoing an electrochemical process on the barrier layer to form a metal layer, removing the patterned photo-resist layer then, to form a conducting film layer. The metal layer is formed through the electrochemical process in the manufacturing method of the conducting film layer. Therefore, the invention is capable of saving the manufacturing cost and the manufacturing process thereof.
Description
Technical field
The invention relates to a kind of manufacture method of conductive film layer, and particularly relevant for a kind of manufacture method that is applied to the conductive film layer in the display floater.
Background technology
Social now multimedia technology is quite flourishing, is indebted to the progress of semiconductor element and display unit mostly.With regard to display, have that high image quality, space utilization efficient are good, the LCD of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.Specifically, LCD is made of the liquid crystal layer that a thin-film transistor array base-plate, a colored optical filtering substrates and are sandwiched between the two substrates.Wherein, thin-film transistor array base-plate is made of a plurality of thin-film transistors and relevant peripheral circuit thereof.In the actual fabrication, the grid of thin-film transistor, source electrode, drain electrode and peripheral circuit thereof all are that metal material is carried out patterning process and forms.
For example, in thin-film transistor array base-plate, the grid of thin-film transistor (gate) is by forming in the lump with patterning process with scan line (scan line).Before forming grid and scan line, need on substrate, to form metal level by physical vaporous deposition (PVD) earlier.Then, again this metal level is carried out patterning process, to form required grid and scan line.Because patterning process comprised a plurality of steps such as coating photoresist, exposure, development and etching, it is numerous and diverse not only to make flow process, and the use cost of associated materials (for example etching solution, mask etc.) and vacuum equipment also can't effectively reduce.
Generally speaking, the grid in the thin-film transistor is to utilize silver alloy to be made.Yet advance towards the target of large scale, high-res owing to LCD in recent years always.Therefore, the electrical conductivity of electrode material need heal height better, to reduce the phenomenon that RC postpones.General conductor material commonly used has copper (resistance value 1.7 * 10
-6Ω cm), silver (resistance value 2.6 * 10
-6Ω cm), molybdenum (resistance value 5.7 * 10
-6Ω cm), chromium (resistance value 12.87 * 10
-6Ω cm).Be electrode material so continue to replace silver in recent years in the field of LCD at development utilization copper.
Summary of the invention
The invention provides a kind of manufacture method of conductive film layer, it can effectively save manufacturing cost.
The invention provides a kind of manufacture method of conductive film layer, it can effectively shorten the making flow process.
The present invention proposes a kind of manufacture method of conductive film layer, it is applicable to the thin-film transistor processing procedure, the manufacture method of conductive film layer of the present invention comprises the following steps: at first, a substrate is provided and forms a patterning photoresist layer on substrate, and wherein the patterning photoresist layer exposes the substrate of part.Then, on patterning photoresist layer and the substrate that exposes, form a barrier layer.Then, on barrier layer, carry out an electrochemistry processing procedure, to form a metal level.Afterwards, remove the patterning photoresist layer, so that barrier layer that stays and metal level form a conductive film layer.
Conductive film layer of the present invention manufacture method in, the method for above-mentioned formation barrier layer can comprise the thin film vapor deposition method.
Conductive film layer of the present invention manufacture method in, above-mentioned electrochemistry processing procedure can comprise galvanoplastic.
Conductive film layer of the present invention manufacture method in, above-mentioned electrochemistry processing procedure can comprise electroless plating method.
Conductive film layer of the present invention manufacture method in, the above-mentioned method that removes the patterning photoresist layer can comprise peels off processing procedure.
Conductive film layer of the present invention manufacture method in, the material of above-mentioned barrier layer can comprise indium tin oxide, indium-zinc oxide, aluminium zinc oxide, aluminium, chromium, nickel, manganese, molybdenum, titanium, tantalum, cobalt, tin, palladium and alloy thereof.
Conductive film layer of the present invention manufacture method in, the material of above-mentioned metal level can comprise copper or silver.
Conductive film layer of the present invention manufacture method in, the thickness of above-mentioned barrier layer can be between 300～1000 dusts.
Conductive film layer of the present invention manufacture method in, above-mentioned metal layer thickness can be between 2000～5000 dusts.
The present invention proposes a kind of manufacture method of conductive film layer, be applicable to the thin-film transistor processing procedure, the manufacture method of conductive film layer of the present invention comprises the following steps: at first, a substrate is provided and forms a patterning photoresist layer on substrate, and wherein the patterning photoresist layer exposes the substrate of part.Then, on patterning photoresist layer and the substrate that exposes, form a barrier layer.Then, remove the patterning photoresist layer, to stay the barrier layer that is positioned on the substrate.Afterwards, barrier layer is carried out an electrochemistry processing procedure, cover the metal level of barrier layer to form one, and make metal level and barrier layer form a conductive film layer.
Conductive film layer of the present invention manufacture method in, the metal layer covers blocking layer of above-mentioned conductive film layer.
Conductive film layer of the present invention manufacture method in, the method for above-mentioned formation barrier layer can comprise the thin film vapor deposition method.
Conductive film layer of the present invention manufacture method in, above-mentioned electrochemistry processing procedure can comprise galvanoplastic.
Conductive film layer of the present invention manufacture method in, above-mentioned electrochemistry processing procedure can comprise electroless plating method.
Conductive film layer of the present invention manufacture method in, the above-mentioned method that removes the patterning photoresist layer can comprise peels off processing procedure.
Conductive film layer of the present invention manufacture method in, the material of above-mentioned barrier layer can comprise indium tin oxide, indium-zinc oxide, aluminium zinc oxide, aluminium, chromium, nickel, manganese, molybdenum, titanium, tantalum cobalt, tin, palladium and alloy thereof.
Conductive film layer of the present invention manufacture method in, the material of above-mentioned metal level can comprise copper or silver.
Conductive film layer of the present invention manufacture method in, the thickness of above-mentioned barrier layer can be between 300～1000 dusts.
Conductive film layer of the present invention manufacture method in, above-mentioned metal layer thickness can be between 2000～5000 dusts.
The manufacture method of conductive film layer of the present invention is to adopt the electrochemistry processing procedure to form metal level, adopts patterning process and vacuum equipment fully compared to existing processing procedure, and the manufacture method of conductive film layer of the present invention can effectively be saved manufacturing cost and be shortened the making flow process.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Figure 1A～1D is the flow process generalized section of the manufacture method of first embodiment of the invention conductive film layer.
Fig. 2 A～2D is the flow process generalized section of the manufacture method of second embodiment of the invention conductive film layer.
Embodiment
First embodiment
Figure 1A～1D is the flow process generalized section of the manufacture method of first embodiment of the invention conductive film layer.Please refer to Figure 1A, at first, a substrate 100 is provided and forms a patterning photoresist layer (patterned photo resist layer) 110 on substrate 100, wherein patterning photoresist layer 110 exposes the substrate 100 of part.In general, before forming patterning photoresist layer 110, can be prior to for example being that mode with rotary coating (spin coating) forms a photoresist layer (not illustrating) on the substrate 100 comprehensively, and the material of photoresist layer for example can adopt eurymeric photoresist or negative photoresist.Then, see through mask (not illustrating) and come this photoresist layer is exposed, so that photoresist layer can form needed pattern.Certainly, those skilled in the art should know that the pattern of the patterning photoresist layer 110 shown in Figure 1A only in order to explanation, also is not intended to limitation at this.
Then please refer to Figure 1B, on patterning photoresist layer 110 and the substrate 100 that exposes, form a barrier layer 120 (barrier layer).On the practice, the method for above-mentioned formation barrier layer 120 can be selected the thin film vapor deposition method for use, to form barrier layer 120 on patterning photoresist layer 110 and the substrate 100 that exposes.The material of barrier layer 120 can adopt indium tin oxide (Indium Tin Oxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), the aluminium zinc oxide (Aluminum Zinc Oxide, AZO), aluminium (Al), chromium (Cr), nickel (Ni), manganese (Mn), molybdenum (Mo), titanium (Ti) or tantalum (Ta), cobalt (Co), tin (Sn), palladium (Pd) and alloy thereof.
Please refer to Fig. 1 C then, on barrier layer 120, carry out an electrochemistry processing procedure, to form a metal level 130.In the actual fabrication, the material of metal level 130 can adopt copper (Cu) or silver low resistance material such as (Ag).Here be noted that the electrochemistry processing procedure can select galvanoplastic (ElectroPlating) or electroless plating method (Electroless Plating) for use, in this limitation painstakingly.
Please refer to Fig. 1 D afterwards, remove patterning photoresist layer 110, so that barrier layer 120a that stays and metal level 130a form a conductive film layer 140.Particularly, the thickness of barrier layer 120a for example is between 300～1000 dusts (angstrom), and the thickness of metal level 130a for example is between 2000～5000 dusts.It should be noted that the method that removes patterning photoresist layer 110 can adopt peels off (lift-off) processing procedure.After patterning photoresist layer 110 was stripped from, the barrier layer 120 that is positioned on the patterning photoresist layer 110 shown in Fig. 1 C also can be removed in the lump with metal level 130, only stays the barrier layer 120a and the metal level 130a that are positioned on the substrate 100.So far above-mentioned, conductive film layer 140 of the present invention has completed.
Specifically, the present invention forms barrier layer 120 with the thin film vapor deposition method, and forms metal level 130 (shown in Fig. 1 C) with the electrochemistry processing procedure.Then, just relend by peeling off processing procedure and can make the barrier layer 120a and the metal level 130a (shown in Fig. 1 D) that stay form required pattern.Here be stressed that barrier layer 120 of the present invention need not carry out etch process with metal level 130, therefore can effectively reduce cost of manufacture and make flow process.In addition, conductive film layer 140 of the present invention can be applied on the display panels also can be used as the metallic diaphragm (for example grid) in the thin-film transistor in order to the peripheral circuit of transmission signals, is not limited at this.
Second embodiment
Fig. 2 A～2D is the flow process generalized section of the manufacture method of second embodiment of the invention conductive film layer.Please refer to Fig. 2 A, at first, a substrate 200 is provided and forms a patterning photoresist layer 210 on substrate 200, wherein patterning photoresist layer 210 exposes the substrate 200 of part.Certainly, those skilled in the art should know that the pattern of the patterning photoresist layer 210 shown in Fig. 2 A only in order to explanation, also is not intended to limitation at this.
Then please refer to Fig. 2 B, on patterning photoresist layer 210 and the substrate 200 that exposes, form a barrier layer 220.The method of above-mentioned formation barrier layer 220 can be selected the thin film vapor deposition method for use, to form barrier layer 220 on patterning photoresist layer 210 and the substrate 200 that exposes.In the actual fabrication, the material of barrier layer 220 can adopt indium tin oxide, indium-zinc oxide, aluminium zinc oxide, aluminium, chromium, nickel, manganese, molybdenum, titanium, tantalum, cobalt, tin, palladium and alloy thereof.
Please refer to Fig. 2 C then, remove patterning photoresist layer 210, to stay the barrier layer 220a that is positioned on the substrate 200.It should be noted that the method that removes patterning photoresist layer 210 can adopt peels off processing procedure.Because after patterning photoresist layer 210 was stripped from, the barrier layer 220 on the patterning photoresist layer 210 shown in Fig. 2 B also can be removed in the lump, only stays the barrier layer 220a that is positioned on the substrate 200.
Please refer to Fig. 2 D afterwards, barrier layer 220a is carried out an electrochemistry processing procedure, cover the metal level 230 of barrier layer 220a to form one, and make the common conductive film layer 240 that forms of metal level 230 and barrier layer 220a.In the actual fabrication, the material of metal level 240 can adopt low resistance material such as copper or silver.Here be noted that the electrochemistry processing procedure can select galvanoplastic or electroless plating method for use, in this limitation painstakingly.By Fig. 2 D as can be known, the metal level 230 that forms by the electrochemistry processing procedure can envelope barrier layer 220a, to form conductive film layer 240.So far above-mentioned, conductive film layer 240 of the present invention has completed.
Because the manufacture method of conductive film layer 240 of the present invention can remove patterning photoresist layer 210, to stay required barrier layer 220a (shown in Fig. 2 C) after forming barrier layer 220.Afterwards, form metal level 230 to cover barrier layer 220a with electroplating process again.Owing in the manufacturing process of conductive film layer 240, need not see through etch process and come barrier layer 220 and metal level 230 are carried out patterning.Therefore, the manufacture method of conductive film layer 240 of the present invention can reach the purpose of effective reduction cost of manufacture and making flow process.
In sum, the manufacture method of conductive film layer of the present invention is to adopt electroplating process and peel off processing procedure to form metal level, and need not carry out patterning by etch process and relevant production equipment.Therefore, the manufacture method of conductive film layer of the present invention can effectively reduce manufacturing cost and make flow process with reduction, and then can improve production capacity (throughput).
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (19)
1. the manufacture method of a conductive film layer is applicable to the thin-film transistor processing procedure, it is characterized in that, the manufacture method of this conductive film layer comprises:
One substrate is provided;
Form a patterning photoresist layer on this substrate, this patterning photoresist layer exposes this substrate of part;
In this patterning photoresist layer with expose the part this substrate on, form a barrier layer;
On this barrier layer, carry out an electrochemistry processing procedure, to form a metal level; And
Remove this patterning photoresist layer, so that this barrier layer and this metal level of part form a conductive film layer.
2. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, the method that forms this barrier layer comprises the thin film vapor deposition method.
3. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, this electrochemistry processing procedure comprises galvanoplastic.
4. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, this electrochemistry processing procedure comprises electroless plating method.
5. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, the method that removes this patterning photoresist layer comprises peels off processing procedure.
6. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, the material of this barrier layer comprises indium tin oxide, indium-zinc oxide, aluminium zinc oxide, aluminium, chromium, nickel, manganese, molybdenum, titanium, tantalum, cobalt, tin, palladium and alloy thereof.
7. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, the material of this metal level comprises copper or silver.
8. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, the thickness of this barrier layer is between 300～1000 dusts.
9. the manufacture method of conductive film layer as claimed in claim 1 is characterized in that, this metal layer thickness is between 2000～5000 dusts.
10. the manufacture method of a conductive film layer is applicable to the thin-film transistor processing procedure, it is characterized in that, the manufacture method of this conductive film layer comprises:
One substrate is provided;
Form a patterning photoresist layer on this substrate, this patterning photoresist layer exposes this substrate of part;
On this patterning photoresist layer and this substrate of exposing, form a barrier layer;
Remove this patterning photoresist layer, so that this barrier layer of part is positioned on this substrate; And
This barrier layer is carried out an electrochemistry processing procedure, cover the metal level of this barrier layer to form one, and make this metal level and this barrier layer form a conductive film layer.
11. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, this metal level of this conductive film layer coats this barrier layer.
12. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, the method that forms this barrier layer comprises the thin film vapor deposition method.
13. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, this electrochemistry processing procedure comprises galvanoplastic.
14. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, this electrochemistry processing procedure comprises electroless plating method.
15. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, the method that removes this patterning photoresist layer comprises peels off processing procedure.
16. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, the material of this barrier layer comprises indium tin oxide, indium-zinc oxide, aluminium zinc oxide, aluminium, chromium, nickel, manganese, molybdenum, titanium, tantalum, cobalt, tin, palladium and alloy thereof.
17. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, the material of this metal level comprises copper or silver.
18. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, the thickness of this barrier layer is between 300～1000 dusts.
19. the manufacture method of conductive film layer as claimed in claim 10 is characterized in that, this metal layer thickness is between 2000～5000 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710126440A CN100590801C (en) | 2007-06-08 | 2007-06-08 | Method for manufacturing conductive film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710126440A CN100590801C (en) | 2007-06-08 | 2007-06-08 | Method for manufacturing conductive film layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101320687A true CN101320687A (en) | 2008-12-10 |
| CN100590801C CN100590801C (en) | 2010-02-17 |
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ID=40180664
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710126440A Expired - Fee Related CN100590801C (en) | 2007-06-08 | 2007-06-08 | Method for manufacturing conductive film layer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014071669A1 (en) * | 2012-11-09 | 2014-05-15 | 深圳欧菲光科技股份有限公司 | Transparent conductor and manufacturing method thereof |
| US9510456B2 (en) | 2012-11-09 | 2016-11-29 | Shenzhen O-Film Tech Co., Ltd. | Transparent conductor and preparation method thereof |
| CN109417023A (en) * | 2016-08-09 | 2019-03-01 | 海安科技株式会社 | The metal mesh type electrically conducting transparent film manufacturing method being modified using photoresist intaglio pattern and surface and the transparent conductive film being thus fabricated |
| CN111180333A (en) * | 2020-01-03 | 2020-05-19 | 云谷（固安）科技有限公司 | Display panel manufacturing method and display panel |
-
2007
- 2007-06-08 CN CN200710126440A patent/CN100590801C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014071669A1 (en) * | 2012-11-09 | 2014-05-15 | 深圳欧菲光科技股份有限公司 | Transparent conductor and manufacturing method thereof |
| US9510456B2 (en) | 2012-11-09 | 2016-11-29 | Shenzhen O-Film Tech Co., Ltd. | Transparent conductor and preparation method thereof |
| CN109417023A (en) * | 2016-08-09 | 2019-03-01 | 海安科技株式会社 | The metal mesh type electrically conducting transparent film manufacturing method being modified using photoresist intaglio pattern and surface and the transparent conductive film being thus fabricated |
| CN111180333A (en) * | 2020-01-03 | 2020-05-19 | 云谷（固安）科技有限公司 | Display panel manufacturing method and display panel |
| CN111180333B (en) * | 2020-01-03 | 2022-10-21 | 云谷（固安）科技有限公司 | Display panel manufacturing method and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100590801C (en) | 2010-02-17 |
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