CN101314212A - Ultra-precision processing apparatus based on photon crystal material and imaging monitoring method - Google Patents
Ultra-precision processing apparatus based on photon crystal material and imaging monitoring method Download PDFInfo
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- CN101314212A CN101314212A CNA2008101007587A CN200810100758A CN101314212A CN 101314212 A CN101314212 A CN 101314212A CN A2008101007587 A CNA2008101007587 A CN A2008101007587A CN 200810100758 A CN200810100758 A CN 200810100758A CN 101314212 A CN101314212 A CN 101314212A
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Abstract
The invention discloses a superprecision machining device based on a photon crystal material and a method for monitoring imaging and relates to the mechanical manufacturing industry technical field, in particular to the technical field of the superprecision machining device based on the photon crystal material. The lower end of a polishing sheet supporting frame power system is connected with a supporting clamp; the lower end of the supporting clamp is connected with the polishing sheet; the lower end of the polishing sheet is correspondingly provided with a substrate; a polished and fallen grinding medium is filled between the polishing sheet and the substrate; detecting light emitted by a detecting light source is reflected on a spectrum scanning platform by a phase dichroscope and transported to a scanning lens arranged on the upper end of the spectrum scanning platform; and the detecting light runs through the scanning lens and reaches a substrate supporting frame. The superprecision machining device and the method realize the aims of having good polishing effect, monitoring the spectral characteristic of the polishing sheet in a polishing region at any moment and acquiring the local deformation and the stress parameters of the polishing sheet in time.
Description
Technical field
The present invention relates to the technical field of machinery manufacturing industry, relate in particular to technical field based on the ultra-precision processing apparatus of photon crystal material.
Background technology
Along with greatly developing of society, people increase day by day to the large-scale semiconductor silicon chip in the industry that is applied in electronics and the high-end detection of optics and the demand of optical material, along with present 12 inches silicon chips put into production, never stop for the research of the manufacturing process of more large-area silicon chip.At electronic manufacturing field, development never stops towards the driving of the equipment of large area silicon sheet microfabrication.For example develop large-area STEP exposure equipment, major diameter silicon ingot the cutting of growth apparatus, large-diameter silicon wafer, grind, the research of equipment such as throwing always is the advanced tackling key problem object of making.At present, domestic many colleges and universities and research institute have carried out certain research in the grinding of large area silicon sheet, the research of polissoir: for example the grinding and polishing equipment, professor Yuan Julong of Zhejiang Polytechnical University that have developed the silicon chip spinning of Dalian University of Technology proposes to utilize principle that half fixed abrasive material polishes or the like.Because these equipment belong to the high-tech category, China's research starting in this respect is late, and a lot of researchs are in the stage of follow-up study always.Because the technical threshold of electronic manufacturing industry is high and the inherence of industry is accustomed to, the reliability of home equipment on production line do not verified fully yet, and can't directly use on production line.At present, in the field of large tracts of land grinding and polishing, the product technology of our autonomous innovation has seldom also restricted the development of relevant device.
At present few with regard to the basic research of Ultraprecise polished mechanism problem.We know that the grinding and polishing instrument that adopts flexible matrix is the primary selection of fragile material polishing.Usually, abrasive material particle that is connected with spring of picture in macromolecular material.
Research particle in formula (1)-(3) is in the relation of three directional accelerations and power.Utilize newton's second law of motion, can calculate acceleration in three directions.M is a point mass, and k is an elastic modelling quantity.
If do not consider the influence of damping, abrasive material is represented in stressed (1)-(3) of can using of three dimensions.Usually the many overall permanences from elastomeric material of research are considered the stressed of abrasive material, thereby the stressed of abrasive material studied.Main on the other hand consideration adopts the method for molecular dynamics and finite element analysis to carry out the simulation study of relevant grinding mechanics.For flexible polishing tool, whole elastic characteristic has variation with the elastic characteristic of part, after the special portion of time after polishing processing, elastomeric material is because whether the variation of the micro-property that heat, cutting fluid etc. cause can influence the mechanism and the effect of polishing, because seldom, almost there is not relevant research at present for local research method.Although the correlative study personnel of Dalian University of Technology and Shanghai Maritime University have studied polishing material body his-and-hers watches The surface roughness affected simultaneously, proposition along with the large area silicon sheet polishing, requirement for the intrinsic property of instrument etc. is more and more higher, and therefore the research for the fundamental mechanics problem in the grinding and polishing seems particularly important.How to study the also characteristic variations of polishing this subject of online detection abrasive material part, also seem particularly urgent.
Existing polishing technology is mainly studied group effect, adopts the optimization of the method discussion burnishing parameters of off-line simultaneously, after a period of time is carried out in polishing, quits work and measures the surface characteristic of burnishing surface.Because polishing area contacts with the processing grinding tool, the introducing more complicated of on-line measurement roughness device, polishing process is influential to the measurement of roughness simultaneously.The problem of the ambient noise of fluorescence and duration is brought certain problem for the monitoring of polishing area in addition.
Summary of the invention
Technical problem: it is good to the purpose of this invention is to provide a kind of polishing effect, polished silicon wafer spectral characteristic in the polishing area can be monitored at any time, polished silicon wafer local deformation and ultra-precision processing apparatus and the imaging monitoring method thereof that are subjected to force parameter can be in time obtained simultaneously based on photon crystal material.
Technical scheme: the present invention adopts following technical scheme for achieving the above object:
Processing unit (plant) of the present invention comprises polishing hardware system I and the II of spectral detection system two parts, and described polishing hardware system I comprises polished silicon wafer support dynamical system, polished silicon wafer, gripping clamping apparatus, polishing come off abrasive material, substrate, substrate support, substrate support dynamical system; The lower end of polished silicon wafer support dynamical system connects gripping clamping apparatus, the lower end of gripping clamping apparatus connects polished silicon wafer, the lower end correspondence of polished silicon wafer is provided with substrate, the lower end of substrate connects the substrate support, the lower end of substrate support connects substrate support dynamical system, is filled with between above-mentioned polished silicon wafer and the substrate to polish the abrasive material that comes off; The above-mentioned spectral detection II of system comprises detection light source, the spectral scan platform, scanning lens, two-phase look mirror, detect charge-coupled image sensor, computer, the above-mentioned spectral detection II of system comprises detection light source, the spectral scan platform, scanning lens, two-phase look mirror, detect charge-coupled image sensor, computer, the detection light of detection light source emission is mapped on the spectral scan platform by two-phase look mirror reversal, and be transferred on the scanning lens that is arranged on spectral scan platform upper end, above-mentioned detection light arrives the substrate support through scanning lens, be transferred on the detection charge-coupled image sensor that is arranged on two-phase look mirror below after the reflection of substrate support, and be transferred on the computer; Above-mentioned polished silicon wafer support dynamical system, detection light source, detection charge-coupled image sensor are connected with computer respectively; The direction of rotation of above-mentioned polished silicon wafer support dynamical system and substrate support dynamical system.
Utilization of the present invention comprises based on the imaging monitoring method of the ultra-precision processing apparatus of photon crystal material:
Step 1: above-mentioned polished silicon wafer is to be mixed by aluminium oxide or cubic boron nitride or diamond and the photonic crystal polymer ratio according to 1: 1 or 1: 2 or 1: 3 or 1: 4, and utilizes polymer grinding tool preparation technology to process;
Step 2: start polished silicon wafer support dynamical system, gripping clamping apparatus makes polished silicon wafer rotate under the drive of polished silicon wafer support dynamical system; Start substrate support dynamical system, the substrate support makes substrate rotate under the drive of substrate support dynamical system;
Step 3: be arranged on polishing between polished silicon wafer and the substrate abrasive material that comes off and in polishing hardware system I, polish, produce certain spectrum simultaneously;
Step 4: detection light source is to two-phase look mirror emission detection light source, and two-phase look mirror reflexes to detection light source on the spectral scan platform, and is transferred to the substrate support through scanning lens;
Step 5: the detection light source that is transferred in the above-mentioned steps four on the substrate support is transferred on the detection charge-coupled image sensor, and signal is presented on the screen of computer;
Step 6: computer is monitored the signal that detects charge-coupled image sensor, obtains the spectral characteristic of the photon crystal material of polished silicon wafer, calculates the spectrum of photon crystal material and the relation of deformation simultaneously, can obtain the deformation x of photonic crystal part; Mechanical characteristic according to photon crystal material obtains elastic modelling quantity K, utilizes Hooke's law to obtain the stressed of part,
Step 7: computer is according to the velocity of rotation of the result of calculation control polished silicon wafer support dynamical system of step 6.
At first abrasive material is mixed with the photonic crystal polymer, certain ratio (for example 1: 3; 1: 2; 1: 1) under carry out moulding, utilize the technology of photoresist preparation, obtain for example polished silicon wafer such as polystyrene, dimethyl silicone polymer, polyimides of abrasive material and photon crystal material.Then polished silicon wafer is polished monitoring experiment in polishing hardware system I.Utilize spectral scan on the II of spectral detection system to detect the elastomeric spectral characteristic of polishing of abrasive material microcell, the deformation of the relation research polishing material by spectral characteristic and deformation, thus obtain the stressed of abrasive material from microcell.
Beneficial effect: the present invention adopts technique scheme, compared with prior art has following advantage:
(1) polishing effect is good.The present invention utilizes polished silicon wafer support dynamical system to drive polished silicon wafer and rotates, utilizing the support dynamical system to drive substrate rotates, polished silicon wafer and substrate are finished polishing at polishing area, the spectral characteristic that can in time detect polished silicon wafer by two-phase look mirror and detection charge-coupled image sensor also shows on computers, can revise the velocity of rotation of polished silicon wafer support dynamical system by computer, thereby reach best polishing effect, polishing time has been lacked in the place greatly, has also reduced raw-material waste.
(2) can monitor polished silicon wafer spectral characteristic in the polishing area at any time.Polished silicon wafer is when finishing polishing in the polishing area, and the light that detection light source is sent is by two-phase look mirror and detect the spectral characteristic that charge-coupled image sensor obtains polished silicon wafer, and in time shows on computers, has realized the effect of synchronous monitoring, has improved polishing effect.
(3) can in time obtain the polished silicon wafer local deformation and be subjected to force parameter.Spectral characteristic by real-time demonstration polished silicon wafer on computers can analyze the local deformation of polished silicon wafer, thereby obtains the force parameter that is subjected to of polished silicon wafer, for large-area polishing provide can reference data, improved the polishing efficiency of ultraprecise processing.
(4) the present invention adopts said structure, and is simple in structure, easy to operate, realized automation mechanized operation; To raw-material utilization rate height, avoid the generation of waste and substandard products simultaneously, greatly reduced production cost.
Spectral characteristic and deformation behavior by polymer around the abrasive material of monitoring polishing area polishing photonic crystal polymer grinding tool, can the on-line monitoring technological parameter for the influence of polishing area microcell, thereby experiment by parameter optimization, parameter is optimized in online acquisition, and online characterization processes parameter, a kind of detection method and thinking based on the online technological parameter that feeds back is provided.
Description of drawings
Fig. 1 is a structure principle chart of the present invention.
Among the figure: polished silicon wafer support dynamical system 1; Polished silicon wafer 2; Gripping clamping apparatus 3; Polish the abrasive material 5 that comes off; Substrate 6; Substrate support 7; Support dynamical system 8; Laser instrument or detection light source 9; Spectral scan platform 10; Scanning lens 11; Two-phase look mirror 12; Detect CCD13; Computer 14.
The specific embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is elaborated, as shown in Figure 1, ultra-precision processing apparatus of the present invention comprises: this device comprises polishing hardware system I and the II of spectral detection system two parts, and described polishing hardware system I comprises polished silicon wafer support dynamical system 1, polished silicon wafer 2, gripping clamping apparatus 3, polishes come off abrasive material 5, substrate 6, substrate support 7, substrate support dynamical system 8; The lower end of polished silicon wafer support dynamical system 1 connects gripping clamping apparatus 3, the lower end of gripping clamping apparatus 3 connects polished silicon wafer 2, the lower end correspondence of polished silicon wafer 2 is provided with substrate 6, the lower end of substrate 6 connects substrate support 7, the lower end of substrate support 7 connects substrate support dynamical system 8, is filled with between above-mentioned polished silicon wafer 2 and the substrate 6 to polish the abrasive material 5 that comes off; The above-mentioned spectral detection II of system comprises detection light source 9, spectral scan platform 10, scanning lens 11, two-phase look mirror 12, detect charge-coupled image sensor 13, computer 14, the above-mentioned spectral detection II of system comprises detection light source 9, spectral scan platform 10, scanning lens 11, two-phase look mirror 12, detect charge-coupled image sensor 13, computer 14, the detection light of detection light source 9 emissions reflexes on the spectral scan platform 10 by two-phase look mirror 12, and be transferred on the scanning lens 11 that is arranged on spectral scan platform 10 upper ends, above-mentioned detection light arrives substrate support 7 through scanning lens 11, be transferred on the detection charge-coupled image sensor 13 that is arranged on two-phase look mirror 12 belows after 7 reflections of substrate support, and be transferred on the computer 14; Above-mentioned polished silicon wafer support dynamical system 1, detection light source 9, detection charge-coupled image sensor 13 are connected with computer 14 respectively; The direction of rotation of above-mentioned polished silicon wafer support dynamical system 1 and substrate support dynamical system 8.
Utilization of the present invention comprises based on the imaging monitoring method of the ultra-precision processing apparatus of photon crystal material:
Step 1: above-mentioned polished silicon wafer 2 is to be mixed by aluminium oxide or cubic boron nitride or diamond and the photonic crystal polymer ratio according to 1: 1 or 1: 2 or 1: 3 or 1: 4, and utilizes polymer grinding tool preparation technology to process;
Step 2: start polished silicon wafer support dynamical system 1, gripping clamping apparatus 2 makes polished silicon wafer 2 rotate under the drive of polished silicon wafer support dynamical system 1; Start substrate support dynamical system 8, substrate support 7 makes substrate 6 rotate under the drive of substrate support dynamical system 8;
Step 3: be arranged on polishing between polished silicon wafer 2 and the substrate 6 abrasive material 5 that comes off and in polishing hardware system I, polish, produce certain spectrum simultaneously;
Step 4: detection light source 9 is to two-phase look mirror 12 emission detection light source, and two-phase look mirror 12 reflexes to detection light source on the spectral scan platform 10, and is transferred to substrate support 7 through scanning lens 13;
Step 5: the detection light source that is transferred in the above-mentioned steps four on the substrate support 7 is transferred on the detection charge-coupled image sensor 13, and signal is presented on the screen of computer 14;
Step 6: 14 pairs of signals that detect charge-coupled image sensor 13 of computer are monitored, and obtain the spectral characteristic of the photon crystal material of polished silicon wafer 2, calculate the spectrum of photon crystal material and the relation of deformation simultaneously, can obtain the deformation x of photonic crystal part; Mechanical characteristic according to photon crystal material obtains elastic modelling quantity K, utilizes Hooke's law to obtain the stressed of part,
Step 7: computer 14 is according to the velocity of rotation of the result of calculation control polished silicon wafer support dynamical system 1 of step 6.
Photonic crystal polymer of the present invention mainly uses materials such as Merlon, polystyrene.The present invention sets up the curve of spectrum of photonic crystal polymer and the corresponding relation of deformation at first according to the deformation of photonic crystal polymer and the relation of spectral drift.Photonic crystal polymer and aluminium oxide or cubic boron nitride or diamond are mixed moulding.The polishing abrasive tool of moulding is fixed on the grinding tool anchor clamps polished silicon wafer 2, and the relative motion under the driving of polishing drive system 1 and substrate drive system 8 of grinding tool and workpiece substrate 6 is polished the abrasive material 5 that comes off and is full of polishing area.Detection light source 9 by dichroscope 12 excitation source is incided polishing area by camera lens 11 and the excitation photon crystal produces emission light, emission light by camera lens 11 and dichroscope 12 with the spectral illumination of drift in detection means 13, by the scanning motion of detection platform 10,14 obtain detecting image on computers.By regulating parameters such as driving rotating speed, obtain abrasive material different spectrographic images on every side at polishing area, by the test of spectrographic images and finished surface, we obtain best burnishing parameters.
Claims (2)
1, a kind of ultra-precision processing apparatus based on photon crystal material, it is characterized in that: this device comprises polishing hardware system (I) and spectral detection system (II) two parts, and described polishing hardware system (I) comprises polished silicon wafer support dynamical system (1), polished silicon wafer (2), gripping clamping apparatus (3), polishes come off abrasive material (5), substrate (6), substrate support (7), substrate support dynamical system (8); The lower end of polished silicon wafer support dynamical system (1) connects gripping clamping apparatus (3), the lower end of gripping clamping apparatus (3) connects polished silicon wafer (2), the lower end correspondence of polished silicon wafer (2) is provided with substrate (6), the lower end of substrate (6) connects substrate support (7), the lower end of substrate support (7) connects substrate support dynamical system (8), is filled with between above-mentioned polished silicon wafer (2) and the substrate (6) to polish the abrasive material (5) that comes off; Above-mentioned spectral detection system (II) comprises detection light source (9), spectral scan platform (10), scanning lens (11), two-phase look mirror (12), detect charge-coupled image sensor (13), computer (14), the above-mentioned spectral detection II of system comprises detection light source (9), spectral scan platform (10), scanning lens (11), two-phase look mirror (12), detect charge-coupled image sensor (13), computer (14), the detection light of detection light source (9) emission reflexes on the spectral scan platform (10) by two-phase look mirror (12), and be transferred on the scanning lens (11) that is arranged on spectral scan platform (10) upper end, above-mentioned detection light arrives substrate support (7) through scanning lens (11), be transferred on the detection charge-coupled image sensor (13) that is arranged on two-phase look mirror (12) below after substrate support (7) reflection, and be transferred on the computer (14); Above-mentioned polished silicon wafer support dynamical system (1), detection light source (9), detection charge-coupled image sensor (13) are connected with computer (14) respectively; The direction of rotation of above-mentioned polished silicon wafer support dynamical system (1) and substrate support dynamical system (8).
2, a kind of imaging monitoring method that utilizes the described ultra-precision processing apparatus based on photon crystal material of claim 1, it is characterized in that: described imaging monitoring method comprises:
Step 1: above-mentioned polished silicon wafer (2) is to be mixed by aluminium oxide or cubic boron nitride or diamond and the photonic crystal polymer ratio according to 1: 1 or 1: 2 or 1: 3 or 1: 4, and utilizes polymer grinding tool preparation technology to process;
Step 2: start polished silicon wafer support dynamical system (1), gripping clamping apparatus (2) makes polished silicon wafer (2) rotate under the drive of polished silicon wafer support dynamical system (1); Start substrate support dynamical system (8), substrate support (7) makes substrate (6) rotate under the drive of substrate support dynamical system (8);
Step 3: be arranged on polishing between polished silicon wafer (2) and the substrate (6) abrasive material (5) that comes off and in polishing hardware system I, polish, produce certain spectrum simultaneously;
Step 4: detection light source (9) is to two-phase look mirror (12) emission detection light source, and two-phase look mirror (12) reflexes to detection light source on the spectral scan platform (10), and is transferred to substrate support (7) through scanning lens (13);
Step 5: the detection light source that is transferred in the above-mentioned steps four on the substrate support (7) is transferred on the detection charge-coupled image sensor (13), and signal is presented on the screen of computer (14);
Step 6: computer (14) is monitored the signal that detects charge-coupled image sensor (13), obtain the spectral characteristic of the photon crystal material of polished silicon wafer (2), calculate the spectrum of photon crystal material and the relation of deformation simultaneously, can obtain the deformation x of photonic crystal part; Mechanical characteristic according to photon crystal material obtains elastic modelling quantity K, utilizes Hooke's law to obtain the stressed of part,
Step 7: computer (14) is according to the velocity of rotation of the result of calculation control polished silicon wafer support dynamical system (1) of step 6.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103978418A (en) * | 2014-04-23 | 2014-08-13 | 宁波大学 | Polishing method for chalcogenide glass optical fibers with protective layers |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103978418A (en) * | 2014-04-23 | 2014-08-13 | 宁波大学 | Polishing method for chalcogenide glass optical fibers with protective layers |
| CN103978418B (en) * | 2014-04-23 | 2016-05-04 | 宁波大学 | A kind of finishing method for the chalcogenide glass fiber with protective layer |
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