CN101301994A - Electron beam-ion beam micro-nanometer process composite system - Google Patents
Electron beam-ion beam micro-nanometer process composite system Download PDFInfo
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- CN101301994A CN101301994A CNA2008101164249A CN200810116424A CN101301994A CN 101301994 A CN101301994 A CN 101301994A CN A2008101164249 A CNA2008101164249 A CN A2008101164249A CN 200810116424 A CN200810116424 A CN 200810116424A CN 101301994 A CN101301994 A CN 101301994A
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Abstract
The invention discloses an electron beam-ion beam micro and nano machining combination system, wherein the electron beam and the ion beam can be operated simultaneously, and the electron in SEM can be integrated with the positively charged ion to effectively decrease influence on observation and analysis caused by charge accumulation on the surface of sample. The electron beam-ion beam micro and nano machining combination system of the invention comprises a flange, a scan electron microscope, a focused ion beam device, a computer which is a part of the scan electron microscope, wherein the flange is arranged on the bevel of a reaction chamber of the scan electron microscope, and the ion gun of the focused ion beam is arranged in the through hole of the flange. By adopting electron beam and ion beam symmetric device, the design scheme has advantages of stabilized, simple and aesthetic structure, convenient and accurate alignment, defined image and high stabilization of sample stage etc., being beneficial to improvement of the imaging quality of the electron beam.
Description
Technical field
The present invention relates to a kind of electron beam-ion beam micro-nanometer process composite system, is that ion gun is installed on the electron-beam reaction chamber by flange, realizes that electron beam, ion beam are respectively perpendicular to the sample platform.
Background technology
Along with improving constantly of the level of the productive forces, energy problem becomes the main challenge that the mankind face, and the microminiaturization of product is to solve one of means of energy crisis, so nanosecond science and technology become present international research focus.The surfacing science and the application thereof in nanosecond science and technology research nanometer field, not only comprise with observation, analyze and study the basic subject of serving as theme, also comprise with nanometer engineering with add the technological sciences that engineering is served as theme, so nanosecond science and technology are integral frameworks that a forward position basic subject and high-tech combine together.It comprises branch's subjects such as nano-fabrication technique, nano measurement, nanometer system physics, nanochemistry, nanobiology, nanomaterial science, nanoelectronics and Nanotribology, wherein, it is the basis of current nano science research that nano-fabrication technique and nano measurement are learned, and plays a part very important in nanosecond science and technology.Nano-fabrication technique is as one of center of nanometer technology, be basic " art " of mixing other diverse discipline, be current nano science research the basis-it not only provides strong means for the research and the expansion of nano science every field, and be the pillar of following nanometer industry, be the important symbol of weighing the nanosecond science and technology development.And nano measurement is learned the evaluation relate to nanoscale and the nanoscale of composition, micro-structural and rerum natura is measured, and for the nano-fabrication technique that relates to nano material and nano-device, characterizes and the measurement ring that is absolutely necessary.
The method of nanometer manufacturing has contained machining, chemical etching, energy beam processing, Compound Machining and technique of scan tunnel microscope processing etc., because need to cut off interatomic combination in the nanoscale processing, needs very big energy density, is about 10
5～10
11J/cm
3Perhaps 10
-21～10
-16The J/ atom.The energy density that traditional cutting grinding consumes is less, be actually that the defective of utilizing junction between atom, molecule or crystal processes, can't cut off interatomic combination, therefore directly utilizing the processing of basic energon such as photon, electronics, ion, must be the main direction and the main method of nano-fabrication technique.Along with people's going deep into to nanosecond science and technology research, nano-fabrication technique has obtained very fast development, machining accuracy improves constantly, can be by mach technology from top to bottom to nanoscale, also can realize, but lack the approach of technology and technology combination from down to up from top to bottom by the technology from down to up of utilizing molecule and biosystem.Development nano measurement science has two important channels: the one, create new nano measurement technology, and set up new principle, new method; The 2nd, routine techniques is transformed, make them can adapt to the needs of nano measurement.The former development in recent years is very fast, Binning in 1984 and Rohrer at first succeed in developing PSTM (STM), for the mankind study the surface atom of material on nanoscale and even atom level level, the geometry and physics, the chemical property relevant with electronic behavior of molecule opened up new approach, the scan-probe technology of Jian Liing becomes the core technology of nano measurement on this basis.The main analysis means of scan-probe technology has transmission electron microscope (TEM) and sweep type transmission electron microscope (STEM) and AFM (AFM) etc., reach its maturity at present, but the complexity of TEM and STEM sample preparation and time-consuming have limited further developing of scan-probe measuring technique.
Focused ion beam technology is a kind of novel micro nanometer process technology that integrates pattern observation, location sample preparation, analysis of components, thin-film deposition and each process of non-mask etching, and the compatibility of ion beam technology and semiconductor technology can combine these two kinds of technology, it has improved the precision and the speed of material, technology, device analysis and repairing on the microelectronics industry greatly, has become one of requisite key technology of microelectronics technology at present.Yet focused ion beam system needs ceaselessly conversion beam intensity in the process of finishing big line processing and tuftlet stream observation pattern, for the performance that should calibrate ion beam after the each conversion of the precision that guarantees to process.This not only has higher requirement to the stability of equipment, and has increased the damage to sample.
Summary of the invention
The purpose of this invention is to provide a kind of electron beam-ion beam micro-nanometer process composite system, this micro-nano processing combined system is the novel micro nanometer process equipment that a cover possesses real time monitoring function, FIB realizes that high-resolution electron beam scanning looks like to be used for the microexamination and the detection of sample to the processing of sample at micron, nanoscale.
The present invention is a kind of electron beam-ion beam micro-nanometer process composite system, include flange (4), SEM (1), focused ion beam apparatus (2), computer (3), computer (3) is the part of SEM (1), flange (4) is installed on the inclined-plane (1b) of reative cell (1a) of SEM (1), and the ion gun (21) of focused ion beam apparatus (2) is installed in the through hole (401) of flange (4).
Flange (4) is an one machine-shaping part, and flange (4) has through hole (401) along central axis, and an end of flange (4) is connector (403), and the other end of flange (4) is annulus (405); The installed surface (402) of connector (403) is provided with groove (408), A screwed hole (409), places seal washer in the groove (408), and end face (410) center of connector (403) is provided with B screwed hole (404); The ring body (411) of annulus (405) is provided with B through hole (406), and the anchor ring (412) of annulus (405) is provided with C screwed hole (407).Adopt flange (4) that SEM (1) and focused ion beam apparatus (2) are made up, realize integrated design, reduced the complicated machinery design of being done for the lens barrel counterweight.
The invention has the advantages that: the symmetrical distribution of electron beam-ion beam makes Stability Analysis of Structures, succinct, attractive in appearance, and centering is convenient, accurate, clear picture; Because the angle that the sample platform need vert is little, the sample platform is more stable, and imaging is more clear, the accuracy of alignment height; Can Real Time Observation ion beam picture and electron beam picture, carry out the adjustment of process immediately; Operating process is fully by computer control software, intelligent degree height.
Description of drawings
Fig. 1 is the schematic diagram of electron beam-ion beam micro-nanometer process composite system of the present invention.
Figure 1A is an electron-beam reaction cell structure sketch.
Fig. 2 is the structure chart of flange of the present invention.
Fig. 2 A is the rearview of Fig. 2.
Fig. 3 is that electron beam, ion beam and sample platform three are adding the state sketch in man-hour.
Fig. 4 is the procedure of processing of electron beam.
Fig. 5 is the procedure of processing of ion beam.
Fig. 6 is the output form of computer to the result.
The specific embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
Shown in Fig. 1, Figure 1A, the present invention is a kind of electron beam-ion beam micro-nanometer process composite system, electron beam, ion beam can be worked simultaneously, and the electronics among the SEM can combine with the ion of positively charged, have effectively reduced the influence to observing and analyzing that sample surfaces causes because of the electric charge accumulation.Flange 4, SEM 1, focused ion beam apparatus 2, computer 3 have been the present invention includes, computer 3 is the part of SEM 1, flange 4 is installed on the inclined-plane 1b (screwed hole 1d is arranged on the inclined-plane 1b) of the reative cell 1a of SEM 1, and the ion gun of focused ion beam apparatus 2 is installed in the through hole 401 of flange 4.Present design has Stability Analysis of Structures, succinct, attractive in appearance owing to adopted electron beam and ion beam symmetrical mounting, and centering is convenient, accurately, and clear picture, sample platform stability advantages of higher help improving the image quality of electron beam.
In the present invention, the scanning electron image software (prior art) that is applicable to materials processing is installed in the computer 3, computer 3 disposes Wicrosoft 2000/2003/XP operating system, pentinum 42.80GHZ (CPU), 80G hard disk, 512M internal memory.
In the present invention, computer 3 is used for
(A) beam spot size of the electronic beam current 12 of gated sweep electron microscope 1 electron gun 11 outgoing, quicken the moving of pressurization, sample platform 13, electron beam focuses on, imaging pattern is eliminated astigmatism etc. down;
(B) exit direction of the ion beam current 22 of control ion beam instrument 2 intermediate ion rifles 21 class origin, accelerating potential, line size, ion beam focusing, imaging pattern are eliminated astigmatism and selection of processing technology etc. down;
(C) the receiving transducer collected specimens related information by the secondary electron in the SEM 1; Described sample related information includes high-resolution sample surfaces pattern, species distribution etc.;
(D) by Real Time Observation, can obtain the situation of sample in process etc. to described sample related information;
(E) control the working process parameter of step (A), step (B) by the sample data of real-time collection;
(F) described sample related information is carried out the file format conversion, be beneficial to utilize once more;
(G) be made into picture or animation output (as shown in Figure 6).
Shown in 1A, on the reative cell 1a of existing SEM 1, cut out an inclined-plane 1b, have A through hole 1c, screwed hole 1d on the inclined-plane 1b, the ion gun 21 that A through hole 1c is used for focused ion beam apparatus 2 passes through, and the ion beam 22 of maintenance ion gun 21 outgoing is perpendicular to sample platform 13.The upper face of reative cell 1a and connector 403 junctions also are provided with screwed hole.
Shown in Fig. 2, Fig. 2 A, in the present invention, flange 4 is an one machine-shaping part, adopts stainless steel.Flange 4 has through hole 401 along central axis, and an end of flange 4 is a connector 403, and the other end of flange 4 is an annulus 405; The installed surface 402 of connector 403 is provided with groove 408, A screwed hole 409, places seal washer in the groove 408, and end face 410 centers of connector 403 are provided with B screwed hole 404; The ring body 411 of annulus 405 is provided with B through hole 406 (B through hole 406 is built in screw, the lens barrel of ion gun can be held out against), and the anchor ring 412 of annulus 405 is provided with C screwed hole 407.The installed surface 402 of connector 403 and the inclined-plane 1b on the reative cell 1a fit, and A aligns with through hole 401 by 1c; Then screw is inserted among A screwed hole 409, the screwed hole 1d and to realize fixedlying connected of flange 4 and reative cell 1a.The anchor ring 412 of annulus 405 is fitted with the end face of ion gun 21, realizes fixedlying connected of annulus 405 and ion gun 21 by screw.Adopt flange 4 that SEM 1 and focused ion beam apparatus 2 are made up, realize integrated design, reduced the complicated machinery design of being done for the lens barrel counterweight.
Referring to shown in Figure 3, the electron beam-ion beam micro-nanometer process composite system that adopts the present invention to design carries out sample and adds man-hour, by adjusting sample platform 13 (the angle β of sample platform and horizontal plane is smaller or equal to 30 °), make the electron beam 12 of electron gun 11 outgoing, the ion beam 22 of ion gun 21 outgoing be radiated at the central point O of sample platform 13.The angle β of sample platform and horizontal plane is designed to smaller or equal to 30 ° in the combined system of the present invention's design, just sample platform 13 is adding the man-hour rotational angle also in this scope, makes the embodiment that combined system of the present invention is minimized the processing cost of sample platform.
The electron beam-ion beam micro-nanometer process composite system of the present invention's design, can be to the step of handling referring to Fig. 4, Fig. 5, shown in Figure 6, the processing that computer 3 in the SEM 1 can be carried out electron beam, ion beam operation respectively and result is exported also can be carried out combination operation.
The electron beam-ion beam micro-nanometer process composite system of the present invention's design also can abbreviate double-beam system as.In system, realize high-resolution imaging with field emission scanning electron microscope, owing to adopt electron beam, not only improved the quality of imaging greatly, and the damage to sample has dropped to bottom line in will observing as once restrainting.The error of having avoided FIB conversion beam intensity repeatedly to bring simultaneously.The present invention is by flange, and making the angle between electron beam and the ion beam is 60 °, not only specious, and the complicated machinery that has reduced to be done for the lens barrel counterweight designs.Be to guarantee the precision of sample processing, add man-hour FIB should and samples vertical, according to structure shown in Figure 3, the sample platform only need rotate 30 ° can satisfy the demand, and greatly reduces the requirement to the sample platform, is convenient to install the large sample platform.Electronics among the SEM can combine with the ion of positively charged, has effectively reduced the influence to observing and analyzing that sample surfaces causes because of the electric charge accumulation.In addition, high-resolution SEM picture can be used as the reference of FIB light beam body parameter adjustment, obtains more high performance FIB.At last, repeat in the process of etching sample, utilize several high-resolution SEM two-dimensional image can carry out three-dimensional analysis and observation at FIB.
The present invention combines high-resolution nano measurement device ESEM and focused ion beam system, and the microfabrication ability of performance FIB has reduced the damage to sample greatly under the monitoring of high-resolution SEM picture.Give full play to the FIB/SEM two-beam technology of FIB and ESEM strong point, carry out three dimensional viewing and analysis in the time of not only can be, and shortened the making flow process of TEM and STEM sample greatly processed sample.This novel symmetrical structure of the present invention design has reduced the rotating range of sample platform greatly, has reduced the requirement of system to the sample platform.In addition, this symmetrical distribution has reduced the counterweight part of lens barrel, has simplified the system mechanics part.
In the present invention, SEM also comprises following characteristic parameter except the parameter of routine:
In the present invention, focused ion beam apparatus also comprises following characteristic parameter except the parameter of routine:
Claims (4)
1, a kind of electron beam-ion beam micro-nanometer process composite system, include SEM (1), focused ion beam apparatus (2), it is characterized in that: also include flange (4), flange (4) is installed on the inclined-plane (1b) of reative cell (1a) of SEM (1), and the ion gun of focused ion beam apparatus (2) is installed in the through hole (401) of flange (4);
Cut out an inclined-plane (1b) on the reative cell (1a) of SEM (1), have A through hole (1c) on the inclined-plane (1b), the ion gun (21) that A through hole (1c) is used for focused ion beam apparatus (2) passes through, and the ion beam (22) of maintenance ion gun (21) outgoing is perpendicular to sample platform (13);
Flange (4) is an one machine-shaping part, and flange (4) has through hole (401) along central axis, and an end of flange (4) is connector (403), and the other end of flange (4) is annulus (405); The installed surface (402) of connector (403) is provided with groove (408), A screwed hole (409), places seal washer in the groove (408), and end face (410) center of connector (403) is provided with B screwed hole (404); The ring body (411) of annulus (405) is provided with B through hole (406), and the anchor ring (412) of annulus (405) is provided with C screwed hole (407).
2, electron beam-ion beam micro-nanometer process composite system according to claim 1, it is characterized in that: adopt flange (4) that SEM (1) and focused ion beam apparatus (2) are made up, realize integrated design, reduced the complicated machinery design of being done for the lens barrel counterweight.
3, electron beam-ion beam micro-nanometer process composite system according to claim 1 is characterized in that: the angle β of sample platform (13) and horizontal plane is smaller or equal to 30 °.
4, electron beam-ion beam micro-nanometer process composite system according to claim 1, it is characterized in that: the processing that the computer (3) in the SEM (1) can be carried out electron beam, ion beam operation respectively and result is exported, also can carry out combination operation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101164249A CN101301994A (en) | 2008-07-10 | 2008-07-10 | Electron beam-ion beam micro-nanometer process composite system |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008101164249A CN101301994A (en) | 2008-07-10 | 2008-07-10 | Electron beam-ion beam micro-nanometer process composite system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064077A (en) * | 2010-12-02 | 2011-05-18 | 北京航空航天大学 | Method for improving focused ion beam machining accuracy by synchronous controllable electron beam |
| CN102332382A (en) * | 2010-06-22 | 2012-01-25 | 卡尔蔡司Nts有限责任公司 | Method of processing of an object |
| CN103177922A (en) * | 2013-02-19 | 2013-06-26 | 北京中科科仪股份有限公司 | Centering device for electric microscope |
| CN105668514A (en) * | 2016-01-25 | 2016-06-15 | 北京航空航天大学 | Focused ion beam-electron beam fused controllable micro-nano machining method |
| CN106185798A (en) * | 2016-07-22 | 2016-12-07 | 天津大学 | The fragile material nanometer cutting process injected based on focused ion bundle |
| CN109553673A (en) * | 2017-09-25 | 2019-04-02 | 中国科学院上海微***与信息技术研究所 | A kind of bioprotein building blocks and preparation method thereof |
| CN112882353A (en) * | 2021-01-28 | 2021-06-01 | 清华大学 | Scanning electron microscope direct-writing photoetching system based on flexible nano servo motion system |
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2008
- 2008-07-10 CN CNA2008101164249A patent/CN101301994A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332382A (en) * | 2010-06-22 | 2012-01-25 | 卡尔蔡司Nts有限责任公司 | Method of processing of an object |
| CN102332382B (en) * | 2010-06-22 | 2017-03-01 | 卡尔蔡司显微镜有限责任公司 | The method of processing object |
| CN102064077A (en) * | 2010-12-02 | 2011-05-18 | 北京航空航天大学 | Method for improving focused ion beam machining accuracy by synchronous controllable electron beam |
| CN103177922A (en) * | 2013-02-19 | 2013-06-26 | 北京中科科仪股份有限公司 | Centering device for electric microscope |
| CN103177922B (en) * | 2013-02-19 | 2015-12-02 | 北京中科科仪股份有限公司 | For the centralising device of electron microscope |
| CN105668514A (en) * | 2016-01-25 | 2016-06-15 | 北京航空航天大学 | Focused ion beam-electron beam fused controllable micro-nano machining method |
| CN105668514B (en) * | 2016-01-25 | 2019-04-23 | 北京航空航天大学 | A kind of method of focused ion beam-electron beam two-beam fusion controllable micro-nano processing |
| CN106185798A (en) * | 2016-07-22 | 2016-12-07 | 天津大学 | The fragile material nanometer cutting process injected based on focused ion bundle |
| CN109553673A (en) * | 2017-09-25 | 2019-04-02 | 中国科学院上海微***与信息技术研究所 | A kind of bioprotein building blocks and preparation method thereof |
| CN112882353A (en) * | 2021-01-28 | 2021-06-01 | 清华大学 | Scanning electron microscope direct-writing photoetching system based on flexible nano servo motion system |
| CN112882353B (en) * | 2021-01-28 | 2021-11-30 | 清华大学 | Scanning electron microscope direct-writing photoetching system based on flexible nano servo motion system |
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Open date: 20081112 |