CN101298673B - Preparation of insulated heat conducting metal substrate - Google Patents
Preparation of insulated heat conducting metal substrate Download PDFInfo
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- CN101298673B CN101298673B CN2007100221019A CN200710022101A CN101298673B CN 101298673 B CN101298673 B CN 101298673B CN 2007100221019 A CN2007100221019 A CN 2007100221019A CN 200710022101 A CN200710022101 A CN 200710022101A CN 101298673 B CN101298673 B CN 101298673B
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- plasma
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- metal substrate
- reaction chamber
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Abstract
The invention provides a preparation method of an insulating and heat-conducting metallic substrate, which comprises the following steps: a metallic parent material is provided and placed in a plasma reaction chamber; a gas mixture with mixed high-erosiveness gas is let into the plasma reaction chamber, and the surface of the metallic parent material is eroded irregularly; the chemical vapor deposition of plasmas is implemented in the plasma reaction chamber, free radical plasmas are generated, and multiple highly heat-conducting coatings are formed on the surface of the metallic parent material. The preparation method of the insulating and heat-conducting metallic substrate can implement even plating on any metallic substrates with any surface state.
Description
[technical field]
The present invention is a kind of preparation method of insulated heat-conducting metal substrate, particularly a kind of preparation method that can carry out the insulated heat-conducting metal substrate of even plated film to the metal substrate of any condition of surface.
[background technology]
The good insulation performance heat-conducting substrate must possess high thermal conductivity, insulativity, low-expansion coefficient.
One of tradition insulating heat-conductive base plate preparation method is printed foil circuit such as a FR4 tellite (PCB) on plastic base, and its thermal conductivity (K) is about 0.36W/mK, and its shortcoming is that thermal characteristics is relatively poor.
Two of insulating heat-conductive base plate preparation method is to need to attach a slice metal sheet such as aluminium base on the PCB substrate, and promptly so-called Metal Core PCB substrate is to improve radiating efficiency.But the thermal conductivity of its dielectric layer is equivalent to tellite, and service temperature is confined in 140 ℃ simultaneously, and process temperatures is confined in 250～300 ℃.
Three of insulating heat-conductive base plate preparation method is ceramic substrate such as the AlN/SiC substrates that directly adopt sinter molding, has good insulativity and thermal conductivity, but its size is limited to below 4.5 square inches, can't be used for large-area panel.
In addition, four of insulating heat-conductive base plate preparation method is to carry out the direct copper bonded substrate (DBC:Direct Bonded Copper) that association reaction obtains under logical 02 high temperature between copper coin and the pottery, having high thermal conductivity and low heat expansion property and dielectricity concurrently.But its operation and process temperatures need be higher than more than 800 ℃.
Yet there are no on the market at present on metal base, (PlasmaChemical Vapor Deposition, the coating thin film technology of novelty PCVD) prepares the method for insulated heat-conducting metal substrate to the utilization Plasma Enhanced Chemical Vapor Deposition (PECVD).
[summary of the invention]
Main purpose of the present invention is to provide a kind of preparation method that can carry out the insulated heat-conducting metal substrate of even plated film to the metal substrate of any condition of surface.
For reaching above-mentioned purpose, the invention provides a kind of preparation method of insulated heat-conducting metal substrate, it may further comprise the steps: a metal base is provided and this metal base is placed plasma reaction chamber; The gaseous mixture that is mixed with highly aggressive gas is fed in this plasma reaction chamber, the erosion of irregularity ground is done on the surface of this metal base had the nano level surfaceness with formation; In this plasma reaction chamber ionic medium chemical vapour deposition, produce the free radical plasma, and form laminated high heat-conducting coating on the surface of this metal base.
High heat conducting coating of the present invention is preferable to comprise plasma interface conversion layer and plasma high heat conductive insulating layer, and this high heat conducting coating is that composite stack forms.
Compared with prior art, with the thin film deposition of PCVD processing procedure use in the preparation of insulating heat-conductive substrate, several advantages are arranged.Because the PCVD processing procedure is a kind of dry type coating process, therefore can not change metal base and only can change surface property.But the PCVD processing procedure can be deposited on the chemical of gaseous state evaporation with coagulable on the metal base.The PCVD processing procedure is a kind of pure thin film deposition process, and its accurately the chemical ingredients of control coating and nanometer to micron-sized deposit thickness.And produce the plasma (the first free radical plasma and the second free radical plasma) that only comprises free radical on the process nature of ionic medium activating gas mixt of the present invention, be not electric neutrality owing to free radical is charged, so the distribution of free radical can not be subjected to the electric field influence of (being used to keep plasma).Therefore, the first free radical plasma and the second free radical plasma can be evenly distributed in this metal base around and uniform deposition in the surface of this metal base, and the condition of surface of metal substrate can not influence the homogeneity of plated film.
[embodiment]
The preparation method of insulated heat-conducting metal substrate of the present invention may further comprise the steps:
1 provides a metal base and this metal base is placed plasma reaction chamber (plasma reaction chamber can be batch or continous way (in-line) CVD (Chemical Vapor Deposition) reactor), when metal base was placed in the plasma, metallic substrate surface can be with the negative voltage of 20 ~ 30volts.Wherein, the surface of this metal base is Any shape and any condition of surface such as strip, plane, curved surface or three-dimensional.The material of this metal base is a kind of in the metals such as copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or aluminium alloy.And this metal base needs through pre-treatment, and pre-treatment comprises degreasing, pickling, and steps such as cleaning make the cleaning surfaces of this metal base.
2 plasma pre-treatment
To be mixed with highly aggressive gas (as CF
4, CF
2Cl
2, Cl
2Deng one or more) gaseous mixture feed in this plasma reaction chamber, irregularity ground is done on the surface of this metal base to be corroded to form the nano level surfaceness; Wherein, also comprise reactant gas (can be nitrogen or oxygen) or rare gas element (can be Ar or He) in the gaseous mixture.
3 plasma gas-phase deposits
In this plasma reaction chamber ionic medium chemical vapour deposition, so that the surface of this metal base forms laminated high heat-conducting coating, wherein, this high heat conducting coating comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and laminated high heat-conducting coating is that composite stack forms.The concrete steps of plasma gas-phase deposit comprise: plasma gas-phase deposit graded bedding and plasma gas-phase deposit high heat conductive insulating layer.
3.1 plasma gas-phase deposit graded bedding
The gaseous mixture that will be mixed with silicon source precursor (precursor is as TMS) feeds in this plasma reaction chamber, wherein, also comprise reactant gas in the gaseous mixture, and reactant gas comprises gaseous oxygen or water vapour.Produce the first free radical plasma by this gaseous mixture of plasma activation in plasma reaction chamber, the first free radical plasma produces plasma interface conversion layer (for example silicon-dioxide) against the surface that low-pressure vapor phase is diffused in this metal base.The plasma interface conversion layer can be the hydrophobic or hydrophilic characteristic surface who converts may command and homogeneous in metallic surface, and can reduce surface roughness by big spoke.The thickness that can control the plasma interface conversion layer is from about 10 nanometers to 10 micron.Can change the gas phase composition at any time and form and reach plasma interface conversion layer of different nature, and the structure of this plasma interface conversion layer can be unitary film or multilayer film, and be the gradual change shape between the rete of multilayer film.
3.2. plasma gas-phase deposit high heat conductive insulating layer
The gaseous mixture that is mixed with high heat conduction chemistry precursors is fed in this plasma reaction chamber, and wherein, the high heat conduction chemistry precursors that includes metal or pottery in the gaseous mixture is (as the precursors Ta (EtCp) of Tatanlum
2(CO) HEtCp or Al (CH
3)
3), reactant gas is (as O
2, N
2, H
2O, NH
3Deng) and rare gas element (as Ar, He or the like).In plasma reaction chamber, produce the second free radical plasma by this gaseous mixture of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer, wherein, the high heat conductive insulating layer that is produced can be Al
2O
3, AlN, BeO and Ta
2O
5High heat conductive insulating layer thickness control is from about 20 nanometers to 10 micron.
Claims (12)
1. the preparation method of an insulated heat-conducting metal substrate is characterized in that may further comprise the steps:
(1) provide a metal base also this metal base to be placed plasma reaction chamber;
(2) gaseous mixture that will be mixed with highly aggressive gas feeds in this plasma reaction chamber, irregularity ground is done on the surface of this metal base corroded to form the nano level surfaceness;
(3) in this plasma reaction chamber ionic medium chemical vapour deposition, produce the free radical plasma, and in the surface of this metal base formation laminated high heat-conducting coating, this high heat conducting coating comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and laminated high heat-conducting coating is that compound storehouse forms, and this step comprises:
(3.1) gaseous mixture that will be mixed with silicon source precursor feeds in this plasma reaction chamber, produce the first free radical plasma by this gaseous mixture of plasma activation in plasma reaction chamber, the first free radical plasma produces the plasma interface conversion layer against the surface that low-pressure vapor phase is diffused in this metal base;
(3.2) gaseous mixture of chemical precursors that will be mixed with metal or pottery feeds in this plasma reaction chamber; Produce the second free radical plasma in plasma reaction chamber by this gaseous mixture of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer.
2. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: this plasma reaction chamber is batch or continous way CVD (Chemical Vapor Deposition) reactor.
3. the preparation method of insulated heat-conducting metal substrate according to claim 1 is characterized in that: the material of this metal base is any in copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or the aluminium alloy.
4. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: this metal base has passed through pre-treatment before entering plasma reaction chamber, pre-treatment comprises degreasing, and pickling is cleaned.
5. the preparation method of insulated heat-conducting metal substrate according to claim 1 is characterized in that: also comprise reactant gas or rare gas element in the gaseous mixture in the step (2).
6. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the highly aggressive gas in the step (2) is CF
4, CF
2Cl
2, Cl
2In one or more.
7. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the gaseous mixture of step (3.1) also comprises reactant gas, reactant gas is gaseous oxygen or water vapour.
8. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the plasma interface conversion layer is a unitary film.
9. the preparation method of insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the plasma interface conversion layer is a multilayer film.
10. the preparation method of insulated heat-conducting metal substrate according to claim 1 is characterized in that: the chemical precursors of the metal of step (3.2) or pottery is (Ta (EtCp)
2(CO) HEtCp or Al (CH
3)
3In a kind of.
11. the preparation method of insulated heat-conducting metal substrate according to claim 1 is characterized in that: the gaseous mixture of step (3.2) also comprises reactant gas and rare gas element.
12. the preparation method of insulated heat-conducting metal substrate according to claim 11 is characterized in that: the reactant gas of step (3.2) is O
2, N
2, H
2O, NH
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100221019A CN101298673B (en) | 2007-04-30 | 2007-04-30 | Preparation of insulated heat conducting metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100221019A CN101298673B (en) | 2007-04-30 | 2007-04-30 | Preparation of insulated heat conducting metal substrate |
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| Publication Number | Publication Date |
|---|---|
| CN101298673A CN101298673A (en) | 2008-11-05 |
| CN101298673B true CN101298673B (en) | 2010-06-30 |
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| CN2007100221019A Expired - Fee Related CN101298673B (en) | 2007-04-30 | 2007-04-30 | Preparation of insulated heat conducting metal substrate |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102355796A (en) * | 2011-10-14 | 2012-02-15 | 格瑞电子（厦门）有限公司 | Manufacturing method of novel aluminum substrate |
| CN104032282B (en) * | 2013-03-10 | 2017-04-12 | 常州国成新材料科技有限公司 | Scheme and similar device for solving problem of flatness influence caused by substrate atom evaporation at high temperature |
| CN112251738A (en) * | 2020-09-30 | 2021-01-22 | 深圳市创智捷科技有限公司 | Preparation method of plasma chemical vapor deposition substrate surface nano-film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670947A (en) * | 2004-03-16 | 2005-09-21 | 私立逢甲大学 | Integrated radiating base plate and making method thereof |
| CN1831190A (en) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | Method for preventing metals from being damaged by high density plasma chemical vapor deposition |
-
2007
- 2007-04-30 CN CN2007100221019A patent/CN101298673B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670947A (en) * | 2004-03-16 | 2005-09-21 | 私立逢甲大学 | Integrated radiating base plate and making method thereof |
| CN1831190A (en) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | Method for preventing metals from being damaged by high density plasma chemical vapor deposition |
Non-Patent Citations (2)
| Title |
|---|
| 秦福文等.GaN缓冲层上低温生长AlN单晶薄膜.半导体光电24 1.2003,24(1),第32页-第36页. |
| 秦福文等.GaN缓冲层上低温生长AlN单晶薄膜.半导体光电24 1.2003,24(1),第32页-第36页. * |
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|---|---|
| CN101298673A (en) | 2008-11-05 |
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