CN101290868A - Preparing method of reference power supply with adjustable voltage - Google Patents
Preparing method of reference power supply with adjustable voltage Download PDFInfo
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- CN101290868A CN101290868A CN 200810028786 CN200810028786A CN101290868A CN 101290868 A CN101290868 A CN 101290868A CN 200810028786 CN200810028786 CN 200810028786 CN 200810028786 A CN200810028786 A CN 200810028786A CN 101290868 A CN101290868 A CN 101290868A
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- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000012360 testing method Methods 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 244000247747 Coptis groenlandica Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000005238 degreasing Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 230000002000 scavenging effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000009954 braiding Methods 0.000 abstract 2
- 238000009434 installation Methods 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
The invention discloses a method for making a voltage-adjustable reference power supply. The method comprises the steps of scribing, dice bonding, precuring, pressure welding, plastic package, flash removal, surface treatment, forming separation, testing, marking, braiding, packaging and warehousing, and provides the concrete operating parameter of each corresponding step and the material specifications of a chip material, a frame material, a gold wire material and a braiding material. The method can reach the goals of process optimization and optimum material collocation, thereby increasing the performances of a voltage-adjustable reference power supply. The voltage-adjustable reference power supply product made by the method has the characteristics of small volume, light weight, shape packaging size suitable for SMT installation, high voltage precision, wide output voltage range, low output impedance and low temperature coefficient.
Description
Technical field
The present invention relates to a kind of preparation method of reference power supply with adjustable voltage.
Technical background
Along with the development of electronic product towards lightening, digitlization and multi-functional three main trend, reference power supply is as the vitals of electronic product, and its status is also more and more higher.At present, various portable type electronic products emerge in an endless stream.Reference power supply has been proposed more and more higher requirement.Thereby, improve power-efficient, reduce power supply power consumption, guarantee that the power supply precision has become the emphasis of reference power supply exploitation.
But existing reference power supply with adjustable voltage manufacturing process does not reach requirement of client, exists the outline packages size undesirable, and voltage accuracy and, output voltage range relative narrower below standard to the shelves rate, working temperature can't satisfy deficiencies such as ordinary production needs.
Summary of the invention
The invention provides the preparation method of reference power supply with adjustable voltage, this method organically combines by the relevant selection of material and the setting of technological parameter, it is little to make product have volume than similar reference power supply with adjustable voltage at product, in light weight, the outline packages size is fit to SMT and installs, the voltage accuracy height, output voltage range is wide, the characteristics of low output impedance and low-temperature coefficient.
Technical scheme of the present invention is: a kind of preparation method of reference power supply with adjustable voltage, and the implementation step of this method is as follows: (1) scribing; (2) bonding die; (3) preceding curing; (4) pressure welding; (5) plastic packaging; (6) remove flash; (7) surface treatment; (8) moulding separates; (9) test mark braid; (10) packing warehouse-in.
Described scribing concrete operations parameter is: baking sheet heating time is 1-3 minute; Baking sheet heating-up temperature is 95-105 ℃; The scribing feed velocity is the 40-80 mm/second; The scribing rotary shaft rotating speed is 28000-32000 rev/min; The scribing knife up is the 50-60 micron; Pure water resistivity is 13-15 megaohm centimetre; The pure water scavenging period is 1-3 minute; The nitrogen purge time is 1-2 minute during cleaning;
Described bonding die concrete operations parameter is: bonding die pressure is the 30-70 gram; Chip thrust 〉=286.1 grams;
Curing comprises four-stage before described, and concrete parameter is: first phase temperature rises to 60 ℃ by 25 ℃, and changing the duration is 15-25 minute; Second phase temperature rises to 175 ℃ by 60 ℃, and changing the duration is 55-65 minute; The three phases temperature remains 170-180 ℃, and temperature hold-time is 35-45 minute; Four-stage, temperature is reduced to 80 ℃ by the temperature that the phase III kept, and changing the duration is 55-65 minute;
The gold thread pulling force of described pressure welding is 〉=4.0 grams; The bonding wire temperature is 230-250 ℃;
Described plastic packaging concrete operations parameter is: mold temperature is 165-175 ℃; Clamping pressure is the 30-60 ton; Be 45-90 second curing time; Injection pressure is the 1.2-2.0 ton, and injection time is 5-15 second;
The described flash concrete operations parameter of going is: electrolysis liquid medicine temperature is 55-65 ℃; Liquid medicine proportion is 6-8 mother-in-law; Water spray pressure is the 300-600 kilogram; Steel band speed be 2.0-6.0 rice/minute; Faradaic current is the 150-300 peace;
Described surface treatment concrete operations parameter is: electrolytic degreasing proportion is 4.0-9.0 mother-in-law; Neutralizer proportion is 2.0-5.0 mother-in-law; The free acid and the Bivalent Tin of 25-60 grams per liter and the additive of 25-45 grams per liter that comprise the 140-240 grams per liter in the electroplate liquid; Adopt the pure tin lead-free process, tin thickness is the 6-12 micron.
Described test mark braid concrete operations parameter is: laser scanning speed is the 1200-1500 mm/second; The braid temperature is 230-270 ℃; The braid time is the 120-180 millisecond.
Among the preparation method of this reference power supply with adjustable voltage, chip meets following test condition when 25 ℃-30 ℃ of temperature:
(1) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, be under 0.5% the situation at output accuracy, input reference voltage V
REFScope is the 2.489-2.511 volt; Be under 1.0% the situation at output accuracy, input reference power supply V
REFScope is the 2.477-2.523 volt; Be under 1.5% the situation at output accuracy, input reference power supply V
REFScope is the 2.464-2.536 volt;
(2) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, at 0 ℃≤T
AUnder≤70 ℃ of conditions, reference voltage rate of change Δ V
REF≤ 17 millivolts;
(3) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KAWhen lying prostrate for 2.5-10, cathode voltage is to reference voltage rate of change Δ V
REF/ Δ V
KAAbsolute value≤2.68 millivolt/volt; As negative electrode continuous current I
k=10 milliamperes, cathode voltage V
KAWhen 10-36 lied prostrate, cathode voltage was to reference voltage rate of change Δ V
REF/ Δ V
KAAbsolute value≤1.98 millivolt/volt;
(4) as negative electrode continuous current I
k=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, reference edge discrepancy electric current I
REF≤ 2.3 microamperes; As negative electrode continuous current I
k=10 milliamperes, cathode voltage V
KA=input reference voltage V
REF, and 0 ℃≤T
AIn the time of≤70 ℃, reference edge discrepancy electric current I
REF≤ 3.8 microamperes;
(5) as cathode voltage V
KA=input reference voltage V
REFThe time, minimum working current I
Min≤ 0.99 milliampere;
(6) cathode voltage V
KA=36 volts, V
REFIn the time of=0 volt, turn-off cathode current I
OffMaximum is 0.99 microampere;
(7) as cathode voltage V
KA=input reference voltage V
REFThe time, negative electrode continuous current I
KFrom 1 milliampere to 100 milliamperes, during frequency f≤1 KHz, motional impedance | Z
KA|≤0.48 ohm.
Among the preparation method of this reference power supply with adjustable voltage
(1) frame material meets following standard:
Leadframe thickness is the 0.092-0.1008 millimeter; The framework base material is an iron-nickel alloy, and nickel content is 40-45%;
(2) the spun gold material meets following standard:
Spun gold consists of Au 〉=99.99%; Ag≤2.0ppm; Cu≤1.0ppm; Fe≤2.0ppm; Mg≤3.0ppm; Pd≤2.0ppm; Si≤2.0ppm;
(3) the braid material meets following standard:
The surface resistivity of reel is 106-1011 Europe centimetre; The surface resistivity of carrier band is 104-108 Europe centimetre.
The present invention at first is exactly to optimize technology compared with prior art, gives optimum configuration by the parameter to each operation in the production stage, makes the product of producing be better than existing product; Secondly be exactly to raw-material control, by controlling the test link of chip well, and the standard of other materials, obtain the collocation of optimal material.
After by above requirement operation, the reference power supply with adjustable voltage of being produced after testing after, its performance index are as follows:
Compare with domestic and international similar producer, relevant parameter contrast of the present invention is as follows:
| Product | Range of regulation | Motional impedance | Accuracy rating | Working temperature | Temperature coefficient |
| Product according to this explained hereafter | 2.5～40V | 200mΩ | ±0.5％～± 1.5％ | -40～125 ℃ | 30ppm/℃ |
| Domestic like product | 2.5～18V | 200mΩ | ±0.5％～±2 ％ | 0～125℃ | 50ppm/℃ |
| External like product | 2.5～36V | 500mΩ | ±0.5％～±2 ％ | -40～85℃ | 50ppm/℃ |
Embodiment
Present embodiment is the preparation method about 431 type reference power supply with adjustable voltage, and its concrete steps comprise: scribing → bonding die → preceding curing → pressure welding → plastic packaging → go flash → surface treatment → moulding separation → test mark braid.Wherein:
The concrete parameter of (1) scribing step is as follows:
(2) the concrete parameter of bonding die step is as follows:
(3) the concrete parameter of preceding curing schedule is as follows:
| Cure stage | Temperature change trend (℃) | Retention time (MIN) |
| Phase I | RT～60 | 20 |
| Second stage | 60～175 | 60 |
| Phase III | 175 | 40 |
| The quadravalence section | 175～80 | 60 |
(4) in the pressure welding step in the technology gold thread pulling force gold thread pulling force be 〉=4.0 the gram;
(5) the concrete parameter of plastic packaging step is as follows:
| Mold temperature | Clamping pressure | Curing time | Injection pressure | Injection time |
| 170±5℃ | 30～60ton | 45～90S | 1.2～2.0ton | 5-15S |
(6) go the concrete parameter of flash step as follows:
| Electrolysis liquid medicine temperature | Liquid medicine proportion | Water spray pressure | Steel band speed | Faradaic current |
| 60±5℃ | 6～8 mother-in-law | 300～600kg | 2.0～6.0m/min | 150-300A |
(7) the concrete parameter of surface treatment step is as follows:
(8) the concrete parameter of moulding separating step is as follows:
SOT-23 stroke: 110～140SPM;
SOT-89 stroke: 55～80SPM;
(9) the concrete parameter of test mark braid step is as follows:
| Laser scanning speed | Laser energy | The braid temperature | The braid time |
| 1200～1500mm/s | 50％～70％ | 250±20℃ | 120～180ms |
In above-mentioned step, following standard is arranged for material:
1. chip material
Require that back layer is complete, non-scale, non-foaming, do not come off, the smooth surface metal level is even; Front side aluminum metal level electrode is complete passivation layer, and the silica dioxide medium layer is light evenly, and the passivation layer of welding zone is must etching clean, the no foreign matter in surface, and pollution-free, must smooth cleaning become clear in the surface.The parameter of chip is as follows:
When temperature was 25 ℃, chip must meet following test condition:
2. frame material
Lead frame requires surface no-pollution, normal winding, and no folding line, thickness are 0.100 ± 0.008mm, and the framework base material is iron-nickel alloy (A42), and nickel content is 42%.
3. spun gold material
The spun gold appearance requirement is a good uniformity, can not have same volume spun gold the different situation of thickness to occur, and the spun gold periphery can not have damaged, the outside at the volume layer must be exposed in two of spun gold, the volume layer must not have the staggered phenomenon of volume layer from inside to outside, and when opening the spun gold packing, the volume layer should not unclamp.
Spun gold is formed and is comprised:
| Composition | Au(％) | Ag(ppm) | Cu(ppm) | Fe(ppm) | Mg(ppm) | Pd(ppm) | Si(ppm) |
| Content | ≥99.99 | ≤2.0 | ≤1.0 | ≤2.0 | ≤3.0 | ≤2.0 | ≤2.0 |
The mechanical performance of spun gold is as follows:
| Spun gold diameter (um) | Model | Fracture load (CN) | Elongation (%) |
| 25 | KG2 | ＞5 | 2～8 |
4. bonding die glue material
5. plastic packaging material material
The plastic packaging material profile is a cylindrical shape, does not have breakage, and color is a black, and wants evenly, and its specification requirement is as follows:
| Project | Unit | Specification |
| Color | - | Black |
| Diameter | mm | 16±0.2 |
| Highly | mm | 16±0.1 |
| Weight | g | 4.1±0.2 |
| Helical flow length | cm(inch) | 91.44±12.7(36±5) |
| Gel time | sec | 25±5 |
| The Shore red hardness | - | Min 70 |
| Thermalexpansioncoefficient 1 | 1×E-6/℃ | 17.0±5.0 |
| Thermalexpansioncoefficient 2 | 1×E-6/℃ | 65.0±5.0 |
| Vitrification point | ℃ | Min 150 |
| Proportion | - | 1.80±0.2 |
| Bending strength A (25 ℃) | Kgf/mm 2 | 13.0±3.0 |
| Bending modulus A (25 ℃) | Kgf/mm 2 | 1300±300 |
| Thermal conductivity | Cal/cm.sec.℃ | Min 1.0×10 -3 |
| Water absorption | ％ | MAX 0.3 |
6. braid material
The appearance color of reel needs evenly, and smooth nothing is criticized the peak, and surface resistivity is 106～1011 Ω .cm.Selected carrier band is a black, the shrinkage of carrier band :≤0.1% (60 ℃, 85%RH) ﹠amp; (85 ℃, 85%RH), surface resistivity is 104～108 Ω .cm.
Claims (5)
1. the preparation method of a reference power supply with adjustable voltage, the implementation step of this method is as follows: (1) scribing; (2) bonding die; (3) preceding curing; (4) pressure welding; (5) plastic packaging; (6) remove flash; (7) surface treatment; (8) moulding separates; (9) test mark braid; (10) packing warehouse-in.
2. the preparation method of reference power supply with adjustable voltage according to claim 1 is characterized in that:
Described scribing concrete operations parameter is: baking sheet heating time is 1-3 minute; Baking sheet heating-up temperature is 95-105 ℃; The scribing feed velocity is the 40-80 mm/second; The scribing rotary shaft rotating speed is 28000-32000 rev/min; The scribing knife up is the 50-60 micron; Pure water resistivity is 13-15 megaohm centimetre; The pure water scavenging period is 1-3 minute; The nitrogen purge time is 1-2 minute during cleaning;
Described bonding die concrete operations parameter is: bonding die pressure is the 30-70 gram; Chip thrust 〉=286.1 grams;
Curing comprises four-stage before described, and concrete parameter is: first phase temperature rises to 60 ℃ by 25 ℃, and changing the duration is 15-25 minute; Second phase temperature rises to 175 ℃ by 60 ℃, and changing the duration is 55-65 minute; The three phases temperature remains 170-180 ℃, and temperature hold-time is 35-45 minute; Four-stage, temperature is reduced to 80 ℃ by the temperature that the phase III kept, and changing the duration is 55-65 minute;
The gold thread pulling force of described pressure welding is 〉=4.0 grams; The bonding wire temperature is 230-250 ℃;
Described plastic packaging concrete operations parameter is: mold temperature is 165-175 ℃; Clamping pressure is the 30-60 ton; Be 45-90 second curing time; Injection pressure is the 1.2-2.0 ton, and injection time is 5-15 second;
The described flash concrete operations parameter of going is: electrolysis liquid medicine temperature is 55-65 ℃; Liquid medicine proportion is 6-8 mother-in-law; Water spray pressure is the 300-600 kilogram; Steel band speed be 2.0-6.0 rice/minute; Faradaic current is the 150-300 peace;
Described surface treatment concrete operations parameter is: electrolytic degreasing proportion is 4.0-9.0 mother-in-law; Neutralizer proportion is 2.0-5.0 mother-in-law; The free acid and the Bivalent Tin of 25-60 grams per liter and the additive of 25-45 grams per liter that comprise the 140-240 grams per liter in the electroplate liquid; Adopt the pure tin lead-free process, tin thickness is the 6-12 micron.
3. the preparation method of reference power supply with adjustable voltage according to claim 2 is characterized in that:
Described test mark braid concrete operations parameter is: laser scanning speed is the 1200-1500 mm/second; The braid temperature is 230-270 ℃; The braid time is the 120-180 millisecond.
4. the preparation method of reference power supply with adjustable voltage according to claim 3 is characterized in that chip when 25 ℃-30 ℃ of temperature, meets following test condition:
(1) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, be under 0.5% the situation at output accuracy, input reference voltage V
REFScope is the 2.489-2.511 volt; Be under 1.0% the situation at output accuracy, input reference power supply V
REFScope is the 2.477-2.523 volt; Be under 1.5% the situation at output accuracy, input reference power supply V
REFScope is the 2.464-2.536 volt;
(2) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, at 0 ℃≤T
AUnder≤70 ℃ of conditions, reference voltage rate of change Δ V
REF≤ 17 millivolts;
(3) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KAWhen lying prostrate for 2.5-10, cathode voltage is to reference voltage rate of change Δ V
REF/ Δ V
KAAbsolute value≤2.68 millivolt/volt; As negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KAWhen 10-36 lied prostrate, cathode voltage was to reference voltage rate of change Δ V
REF/ Δ V
KAAbsolute value≤1.98 millivolt/volt;
(4) as negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REFThe time, reference edge discrepancy electric current I
REF≤ 2.3 microamperes; As negative electrode continuous current I
K=10 milliamperes, cathode voltage V
KA=input reference voltage V
REF, and 0 ℃≤T
AIn the time of≤70 ℃, reference edge discrepancy electric current I
REF≤ 3.8 microamperes;
(5) as cathode voltage V
KA=input reference voltage V
REFThe time, minimum working current I
Min≤ 0.99 milliampere;
(6) cathode voltage V
KA=36 volts, V
REFIn the time of=0 volt, turn-off cathode current I
OffMaximum is 0.99 microampere;
(7) as cathode voltage V
KA=input reference voltage V
REFThe time, negative electrode continuous current I
KFrom 1 milliampere to 100 milliamperes, during frequency f≤1 KHz, motional impedance | Z
KA|≤0.48 ohm.
5, the preparation method of reference power supply with adjustable voltage according to claim 4 is characterized in that:
(1) frame material meets following standard:
Leadframe thickness is the 0.092-0.1008 millimeter; The framework base material is an iron-nickel alloy, and nickel content is 40-45%;
(2) the spun gold material meets following standard:
Spun gold consists of Au 〉=99.99%; Ag≤2.0ppm; Cu≤1.0ppm; Fe≤2.0ppm; Mg≤3.0ppm; Pd≤2.0ppm; Si≤2.0ppm;
(3) the braid material meets following standard:
The surface resistivity of reel is 106-1011 Europe centimetre; The surface resistivity of carrier band is 104-108 Europe centimetre.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810028786 CN100590791C (en) | 2008-06-11 | 2008-06-11 | Preparing method of reference power supply with adjustable voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810028786 CN100590791C (en) | 2008-06-11 | 2008-06-11 | Preparing method of reference power supply with adjustable voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101290868A true CN101290868A (en) | 2008-10-22 |
| CN100590791C CN100590791C (en) | 2010-02-17 |
Family
ID=40035060
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810028786 Expired - Fee Related CN100590791C (en) | 2008-06-11 | 2008-06-11 | Preparing method of reference power supply with adjustable voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100590791C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989535A (en) * | 2009-08-05 | 2011-03-23 | 深圳市远望工业自动化设备有限公司 | All-in-one machine of semiconductor device for testing, sorting, marking and braiding and one-stop processing method |
| CN102565721A (en) * | 2010-12-10 | 2012-07-11 | 三星Led株式会社 | System and method for manufacturing power supply unit, and flicker measurement apparatus |
| CN102602568A (en) * | 2012-02-22 | 2012-07-25 | 格兰达技术（深圳）有限公司 | Rotary detection marking and taping machine for IC (integrated circuit) block materials and working method of rotary detection marking and taping machine |
| CN103354270A (en) * | 2013-07-01 | 2013-10-16 | 宁波康强电子股份有限公司 | Process for removing spilling of EMC packaging LED lead frame |
| CN104752386A (en) * | 2013-12-25 | 2015-07-01 | 天水华天科技股份有限公司 | High reliability small outline package (SOP) lead frame and production method of packaging piece |
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2008
- 2008-06-11 CN CN 200810028786 patent/CN100590791C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989535A (en) * | 2009-08-05 | 2011-03-23 | 深圳市远望工业自动化设备有限公司 | All-in-one machine of semiconductor device for testing, sorting, marking and braiding and one-stop processing method |
| CN101989535B (en) * | 2009-08-05 | 2013-09-18 | 深圳市远望工业自动化设备有限公司 | All-in-one machine of semiconductor device for testing, sorting, marking and braiding and one-stop processing method |
| CN102565721A (en) * | 2010-12-10 | 2012-07-11 | 三星Led株式会社 | System and method for manufacturing power supply unit, and flicker measurement apparatus |
| US8816601B2 (en) | 2010-12-10 | 2014-08-26 | Samsung Electronics Co., Ltd. | System for manufacturing power supply unit and method for manufacturing supply unit, and flicker measurement apparatus |
| CN102565721B (en) * | 2010-12-10 | 2015-01-14 | 三星电子株式会社 | System and method for manufacturing power supply unit, and flicker measurement apparatus |
| CN102602568A (en) * | 2012-02-22 | 2012-07-25 | 格兰达技术（深圳）有限公司 | Rotary detection marking and taping machine for IC (integrated circuit) block materials and working method of rotary detection marking and taping machine |
| CN103354270A (en) * | 2013-07-01 | 2013-10-16 | 宁波康强电子股份有限公司 | Process for removing spilling of EMC packaging LED lead frame |
| CN103354270B (en) * | 2013-07-01 | 2016-08-24 | 宁波康强电子股份有限公司 | A kind of EMC encapsulation LED lead frame goes flash technique |
| CN104752386A (en) * | 2013-12-25 | 2015-07-01 | 天水华天科技股份有限公司 | High reliability small outline package (SOP) lead frame and production method of packaging piece |
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