CN101275062A - 粘合剂组合物、粘合片以及半导体装置的制造方法 - Google Patents

粘合剂组合物、粘合片以及半导体装置的制造方法 Download PDF

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Publication number
CN101275062A
CN101275062A CNA2008100883362A CN200810088336A CN101275062A CN 101275062 A CN101275062 A CN 101275062A CN A2008100883362 A CNA2008100883362 A CN A2008100883362A CN 200810088336 A CN200810088336 A CN 200810088336A CN 101275062 A CN101275062 A CN 101275062A
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China
Prior art keywords
epoxy
binder layer
composition
chip
adhesive sheet
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CNA2008100883362A
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English (en)
Inventor
市川功
佐伯尚哉
贱机弘宪
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Lintec Corp
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Lintec Corp
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Publication of CN101275062A publication Critical patent/CN101275062A/zh
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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Abstract

本发明提供安装有薄半导体芯片的封装即使暴露在严酷的回流焊条件下也不会发生接合界面的剥离和封装开裂、能实现高封装可靠性的粘合剂组合物。本发明涉及的粘合剂组合物的特征在于，含有丙烯酸聚合物(A)、环氧当量为180g/eq以下的环氧树脂(B)以及固化剂(C)。

Description

粘合剂组合物、粘合片以及半导体装置的制造方法
技术领域
本发明涉及特别适于在将半导体元件(半导体芯片)在有机基板、引线框上管芯键合(die bonding)的工序以及将硅晶片等切割并将半导体芯片在有机基板、引线框上管芯键合的工序中使用的粘合剂组合物和具有由该粘合剂组合物构成的粘合剂层的粘合片以及使用该粘合片的半导体装置的制造方法。
背景技术
硅、砷化镓等的半导体晶片以较大的直径被制造，该晶片被切断分离(切割)成元件小片(IC芯片)后转移至下一工序即装配工序。此时，半导体晶片在预先粘贴于粘合片的状态下进行切割、清洗、干燥、扩展、拾取的各工序，然后转移至下一工序即键合工序。
为了简化这些工序中的拾取工序和键合工序的过程，提出了各种同时兼具晶片固定功能和管芯接合功能的切割·管芯键合用粘合片(例如专利文献1～4)。
专利文献1～4中公开了由特定的组合物构成的粘合剂层和基材所形成的粘合片。该粘合剂层在晶片切割时具有固定晶片的作用，而且利用能量线照射，粘接力下降，能控制与基材之间的粘接力，因此若在切割结束后进行芯片拾取，则粘合剂层与芯片一起剥离。将带有粘合剂层的IC芯片置于基板并加热，粘合剂层中的热固化性树脂显现出粘接力，完成IC芯片与基板的粘接。
上述专利文献中公开的粘合片能进行所谓的直接管芯键合，从而可以省略管芯接合用粘接剂的涂布工序。上述专利文献中公开的粘合剂掺有低分子量的能量线固化性化合物作为能量线固化性成分。利用能量线照射，能量线固化性化合物聚合固化，粘接力下降，粘合剂层从基材的剥离变得容易。另外，上述粘合片的粘合剂层在经过能量线固化以及热固化的管芯键合后，所有成分均固化，芯片和基板牢固粘接。
近年来，对半导体装置的物性要求非常严格。例如，要求在严酷的湿热环境下具有封装可靠性。但由于半导体芯片自身薄型化，导致芯片强度下降，在严酷的湿热环境下的封装可靠性并不充分。
上述专利文献中公开的粘合剂使用低分子量的能量线固化性化合物作为能量线固化性成分，但这种低分子量的能量线固化性化合物根据其掺合比例、分散状态或固化条件的不同，会因剪切强度不足而易在湿热环境下引起界面开裂，使芯片与印制电路布线基板等被粘体的粘接性下降。因此，日益严格的半导体封装在可靠性方面有时无法满足所需水平。
近年来，关于电子器件的连接中实施的表面安装法，采用将封装整体以焊锡熔点以上的温度高温化的表面安装法(回流焊)。最近，考虑到对环境的影响，通过改用不含铅的焊锡，安装温度从以往的240℃上升到260℃，半导体封装内部产生的应力变大，发生接合界面剥离和封装开裂的危险性进一步提高。
也就是说，半导体芯片的薄型化和安装温度的上升导致封装可靠性下降。
专利文献1：日本专利特开平2-32181号公报
专利文献2：日本专利特开平8-239636号公报
专利文献3：日本专利特开平10-8001号公报
专利文献4：日本专利特开2000-17246号公报
发明内容
因此，要求安装有薄型化半导体芯片的封装即使暴露在严酷的回流焊条件下也不会发生接合界面剥离和封装开裂，实现高封装可靠性。
本发明是鉴于上述现有技术完成的发明，其目的是对管芯键合中使用的粘接剂进行探讨以满足上述要求。
本发明者以解决上述课题为目的进行潜心研究，结果发现：若增加环氧类热固化性树脂中环氧基的绝对量，则即使暴露在严酷的回流焊条件下也不会发生接合界面剥离和封装开裂，从而完成了本发明。
本发明的技术内容如下所述。
(1)粘合剂组合物，含有丙烯酸聚合物(A)、环氧当量为180g/eq以下的环氧树脂(B)以及固化剂(C)。
(2)上述(1)所述的粘合剂组合物，其中，上述固化剂(C)是具有2个以上酚性羟基且酚性羟基当量为103g/eq以下的化合物。
(3)粘合片，在基材上形成由上述(1)或(2)所述的粘合剂组合物构成的粘合剂层而获得。
(4)半导体装置的制造方法，包括如下工序：在上述(3)所述的粘合片的粘合剂层上粘贴半导体晶片，将上述半导体晶片切割成IC芯片，使粘合剂层粘合残留于上述IC芯片背面而从基材剥离，将上述IC芯片介以上述粘合剂层热压接于管芯焊盘(die pad)部上。
本发明提供安装有薄型化半导体芯片的封装即使暴露在严酷的回流焊条件下也能实现高封装可靠性的粘合剂组合物和具有由该粘合剂组合物构成的粘合剂层的粘合片以及使用该粘合片的半导体装置的制造方法。
具体实施方式
下面，更具体地说明本发明。
本发明涉及的粘合剂组合物含有丙烯酸聚合物(A)(以下也称为“(A)成分”。其他成分也同样。)、环氧当量为180g/eq以下的环氧树脂(B)(以下也称为“(B)成分”。)以及固化剂(C)作为必须成分，为了改善各种物性也可以根据需要含有其他成分。下面，对上述各成分进行具体说明。
(A)丙烯酸聚合物；
丙烯酸聚合物(A)可以采用以往公知的丙烯酸聚合物。丙烯酸聚合物的重均分子量优选为1万以上200万以下，进一步优选为10万以上150万以下。若丙烯酸聚合物的重均分子量过低，则与基材的粘接力提高，会引起拾取不良，若超过200万，则粘合剂层有时无法跟随基板凹凸，导致空隙等的产生。丙烯酸聚合物的玻璃化温度优选-60℃以上0℃以下，进一步优选-50℃以上-10℃以下，特别优选在-40℃以上-20℃以下的范围。若玻璃化温度过低，则粘合剂层与基材的剥离力变大而引起芯片拾取不良，若过高，则用于固定晶片的粘接力有可能不充分。另外，作为该丙烯酸聚合物的单体，可列举(甲基)丙烯酸酯单体或其衍生物。例如，烷基的碳原子数为1～18的(甲基)丙烯酸烷基酯，例如可列举(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等，具有环状骨架的(甲基)丙烯酸酯，例如可列举(甲基)丙烯酸环烷酯、(甲基)丙烯酸苄酯、丙烯酸异冰片酯、丙烯酸二环戊基酯、丙烯酸二环戊烯基酯、丙烯酸二环戊烯氧乙酯、亚氨丙烯酸酯等，丙烯酸2-羟乙酯、甲基丙烯酸2-羟乙酯、丙烯酸2-羟丙酯、甲基丙烯酸2-羟丙酯、丙烯酸、甲基丙烯酸、衣康酸、甲基丙烯酸缩水甘油酯、丙烯酸缩水甘油酯等。也可以与乙酸乙烯酯、丙烯腈、苯乙烯等共聚。另外，具有羟基的物质与环氧树脂的相溶性好，因而优选。
(B)环氧当量为180g/eq以下的环氧树脂；
作为环氧当量为180g/eq以下的环氧树脂(B)，只要环氧当量在180g/eq以下，可以采用以往公知的环氧树脂。
本发明使用环氧当量为180g/eq以下、优选为70～170g/eq的环氧树脂(B)，即环氧基的绝对量多的环氧树脂(B)，因此，本发明的粘合剂组合物固化形成的固化物中的共价键密度增加，以本发明的粘合剂组合物为管芯键合用粘合剂的封装即使暴露在严酷的回流焊条件下也不会发生或极难发生接合界面剥离和封装开裂。另外，本发明的环氧当量的值是根据JIS K7236测定时的值。
作为环氧树脂(B)，具体可列举下式(1)表示的多官能类环氧树脂、下式(2)表示的联苯化合物等。
它们可以单独使用1种，或2种以上组合使用。
Figure A20081008833600071
(式中n表示0以上的整数)
Figure A20081008833600072
在本发明的粘合性树脂组合物中，相对于丙烯酸聚合物(A)100重量份，优选含有1～1500重量份、进一步优选含有3～1000重量份的环氧树脂(B)。若不足1重量份，则有时无法得到充分的粘接性，若超过1500重量份，则与基材的剥离力提高，会引起拾取不良。
本发明的粘合剂组合物也可以含有该环氧树脂(B)以外的环氧树脂(即环氧当量超过180g/eq的环氧热固化性树脂(以下称为“环氧树脂(b’)”)。)，作为该环氧树脂(b’)，可以使用以往公知的各种环氧树脂。作为公知的环氧树脂，可列举双酚A二缩水甘油醚及其氢化物、邻甲酚酚醛清漆环氧树脂(下式(3))、二环戊二烯型环氧树脂(下式(4))、联苯型环氧树脂(下式(5))等分子中有2个以上官能团的环氧化合物。
它们可以单独使用1种，或2种以上组合使用。
(式中n表示0以上的整数)
(式中n表示0以上的整数)
Figure A20081008833600083
(式中n表示0以上的整数)
当使用环氧树脂(b’)时，环氧树脂(b’)/环氧树脂(B)的比率(重量比)优选为20以下，进一步优选为0.01～9。
(C)固化剂；
固化剂(C)作为环氧树脂(B)的固化剂而发挥作用。作为优选的固化剂(C)，可列举1分子中具有2个以上能与环氧基反应的官能团的化合物，该官能团可列举酚性羟基、醇性羟基、氨基、羧基以及酸酐等。其中优选列举酚性羟基、氨基、酸酐等，进一步优选列举酚性羟基、氨基。作为它们的具体例子，可列举下式(6)表示的多官能类酚醛树脂、下式(7)表示的双酚、下式(8)表示的酚醛清漆型酚醛树脂、下式(9)表示的二环戊二烯类酚醛树脂等的酚性固化剂、下式(10)表示的ザイロツク型酚醛树脂、DICY(二氰二胺)等胺类固化剂。这些固化剂可以单独使用1种，或2种以上混合使用。
Figure A20081008833600091
(式中n表示0以上的整数)
Figure A20081008833600092
(式中n表示0以上的整数)
Figure A20081008833600101
(式中n表示0以上的整数)
Figure A20081008833600102
(式中n表示0以上的整数)
固化剂(C)中优选使用具有2个以上酚性羟基且酚性羟基当量为103g/eq以下(下限值通常为55g/eq左右。)的固化剂(以下也称为“固化剂(cc)”。)。这种固化剂(cc)中能与环氧基反应的酚性羟基的绝对量多，因此若使用固化剂(cc)，则本发明粘合剂组合物固化形成的固化物中的共价键密度增加，能进一步切实地防止接合界面剥离和封装开裂的发生。作为固化剂(cc)的具体例子，可列举上式(6)、(7)表示的化合物。另外，该羟基当量的值是根据JIS K0070测定时的值。
当使用固化剂(cc)时，固化剂(C)中的固化剂(cc)的比率优选为50～100重量％，进一步优选为80～100重量％。
固化剂(C)的使用量相对于环氧树脂(B)和环氧树脂(b’)的总计100重量份，优选为0.1～500重量份，进一步优选为1～200重量。若固化剂(C)的量过小，则有时固化不充分而无法得到粘接性，若过剩，则吸湿率提高，有时导致封装可靠性下降。
本发明涉及的粘合剂组合物含有上述丙烯酸聚合物(A)、环氧树脂(B)以及固化剂(C)作为必须成分，为了改善各种物性也可以根据需要含有以下成分。
(D)固化促进剂；
固化促进剂(D)用于调节粘合剂组合物的固化速度。作为优选的固化促进剂，可列举能促进环氧基与酚性羟基或胺等的反应的化合物，具体可列举三亚乙基二胺、苄基二甲基胺、三乙醇胺、二甲基氨基乙醇、三(二甲基氨基甲基)苯酚等叔胺类，2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑等咪唑类，三丁基膦、二苯基膦、三苯基膦等有机膦类，四苯基鏻四苯基硼酸盐、三苯基膦四苯基硼酸盐等四苯基硼盐。它们可以单独使用1种或2种以上混合使用。
固化促进剂(D)相对于环氧树脂(B)、环氧树脂(b’)以及固化剂(C)的总计100重量份，优选含有0.001～100重量份，进一步优选0.01～50重量份，更优选0.1～10重量份。
(E)偶联剂；
偶联剂用于提高粘合剂组合物对被粘体的粘接性、密合性。通过使用偶联剂，在不损坏粘合剂组合物固化得到的固化物的耐热性的前提下，可提高其耐水性。作为偶联剂，优选使用具有与上述(A)成分、(B)成分等含有的官能团反应的基团的化合物。偶联剂优选硅烷偶联剂。作为该偶联剂，可列举γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷、β-(3，4-环氧基环己基)乙基三甲氧基硅烷、γ-(甲基丙烯酰丙基)三甲氧基硅烷、γ-氨基丙基三甲氧基硅烷、N-6-(氨基乙基)-γ-氨基丙基三甲氧基硅烷、N-6-(氨基乙基)-γ-氨基丙基甲基二乙氧基硅烷、N-苯基-γ-氨基丙基三甲氧基硅烷、γ-脲基丙基三乙氧基硅烷、γ-巯基丙基三甲氧基硅烷、γ-巯基丙基甲基二甲氧基硅烷、双(3-三乙氧基甲硅烷基丙基)四硫烷、甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙酰氧基硅烷、咪唑硅烷等。它们可以单独使用1种或2种以上混合使用。使用这些偶联剂时，相对于环氧树脂(B)、环氧树脂(b’)以及固化剂(C)的总计100重量份，通常以0.1～20重量份、优选以0.2～10重量份、进一步优选以0.3～5重量份的比例使用。若不足0.1重量份，则有可能无法得到效果，若超过20重量份，则有可能成为漏气的原因。
(F)交联剂；
为了调节粘合剂组合物的初期粘接力和凝聚力，也可以添加交联剂。作为交联剂，可列举有机多元异氰酸酯化合物、有机多元亚胺化合物。
作为上述有机多元异氰酸酯化合物，可列举芳香族多元异氰酸酯化合物、脂肪族多元异氰酸酯化合物、脂环族多元异氰酸酯化合物以及这些多元异氰酸酯化合物的三聚体、以及由这些多元异氰酸酯化合物和多元醇化合物反应得到的末端异氰酸酯聚氨酯预聚物等。作为有机多元异氰酸酯化合物的更具体的例子，例如可例举2，4-甲苯二异氰酸酯、2，6-甲苯二异氰酸酯、1，3-苯二亚甲基二异氰酸酯、1，4-苯二亚甲基二异氰酸酯、二苯基甲烷-4，4’-二异氰酸酯、二苯基甲烷-2，4’-二异氰酸酯、3-甲基二苯基甲烷二异氰酸酯、1，6-己二异氰酸酯、异佛尔酮二异氰酸酯、二环己基甲烷-4，4’-二异氰酸酯、二环己基甲烷-2，4’-二异氰酸酯、三羟甲基丙烷加成甲代亚苯基二异氰酸酯、赖氨酸异氰酸酯等。
作为上述有机多元亚胺化合物的具体例子，可列举N，N’-二苯基甲烷-4，4’-双(1-氮杂环丙烷羧酰胺)、三羟甲基丙烷-三-β-氮杂环丙烷基丙酸酯、四羟甲基甲烷-三-β-氮丙啶基丙酸酯、N，N’-甲苯-2，4-二(1-氮杂环丙烷羧酰胺)三亚乙基三聚氰胺等。
交联剂(F)相对于丙烯酸聚合物(A)100重量份，通常以0.01～10重量份、优选以0.1～5重量份、进一步优选以0.5～3重量份的比率使用。
(G)无机填充剂；
通过在粘合剂中掺合无机填充剂，可以调节热膨胀系数，对于与由金属、有机树脂形成的基板具有不同热膨胀系数的半导体芯片，通过使固化后的粘合剂层的热膨胀系数最适化，可以提高封装的耐热性。此外，还能减少粘合剂层固化后的吸湿率。作为优选的无机填充剂，可列举二氧化硅、氧化铝、滑石、碳酸钙、钛白、氧化铁红、碳化硅、氮化硼等的粉末，将它们球形化后得到的圆珠、单晶纤维、无定形纤维等。它们可以单独使用1种或2种以上混合使用。其中，本发明优选使用二氧化硅粉末、氧化铝粉末。
关于无机填充剂的用量，相对于本发明粘合剂组合物整体，通常可在0～80重量％的范围内调节。
(H)能量线聚合性化合物；
本发明的粘合剂组合物中可掺入能量线聚合性化合物(H)。通过利用能量线照射使能量线聚合性化合物(H)固化，可以降低粘合剂层的粘接力，使基材和粘合剂层的层间剥离易于进行。
能量线聚合性化合物(H)是受到紫外线、电子射线等能量线照射即聚合固化的化合物。作为该能量线聚合性化合物，具体可使用二环戊二烯二甲氧基二丙烯酸酯、三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二季戊四醇六丙烯酸酯或1，4-丁二醇二丙烯酸酯、1，6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、低聚酯丙烯酸酯、聚氨酯丙烯酸酯类低聚物、环氧改性丙烯酸酯、聚醚丙烯酸酯、衣康酸低聚物等丙烯酸酯类化合物。该化合物在分子内至少具有1个聚合性双键，通常重均分子量为100～30000，优选为300～10000左右。
当使用能量线聚合性化合物(H)时，能量线聚合性化合物(H)相对于丙烯酸共聚物(A)100重量份，通常以1～400重量份、优选以3～300重量份、进一步优选以10～200重量份的比例使用。若超过400重量份，则会使粘合剂层对有机基板、引线框的粘接性下降。
(I)光聚合引发剂；
当使用上述能量线聚合性化合物(H)时，通过在其使用之际向该组合物中添加光聚合引发剂(I)，可以减少聚合固化时间以及光线照射量。
作为该光聚合引发剂，具体可列举二苯甲酮、苯乙酮、苯偶姻、苯偶姻甲醚、苯偶姻***、苯偶姻异丙醚、苯偶姻异丁醚、苯偶姻苯甲酸、苯偶姻苯甲酸甲酯、苯偶姻二甲基乙缩醛、2，4-二乙基噻吨酮、α-羟基环己基苯基酮、苄基二苯硫、一硫化四甲基秋兰姆、偶氮二异丁腈、苯偶酰、联苄、丁二酮、β-氯蒽醌等。光聚合引发剂(I)可以单独使用1种或2种以上组合使用。
关于光聚合引发剂(I)的掺合比例，理论上应根据粘合剂中存在的不饱和键量、其反应性以及使用的光聚合引发剂的反应性来决定，但在复杂的混合物体系中未必容易。使用光聚合引发剂(I)时，作为一般性参考标准，光聚合引发剂(I)相对于丙烯酸共聚物(A)100重量份优选含有0.1～10重量份，进一步优选1～5重量份。当含量在上述范围时，可得到满意的拾取性。若超过10重量份，则生成无助于光聚合的残留物，粘合剂的固化性会变得不充分。
(其他成分)
除上述以外，本发明的粘合剂组合物中还可以根据需要掺合各种添加剂。例如，为了保持固化后的柔性，可以添加柔性成分。柔性成分是在常温及加热下具有柔性的成分。柔性成分可以是热塑性树脂、弹性体形成的聚合物，也可以是聚合物的接枝成分、聚合物的嵌段成分。另外，还可以是柔性成分预先被环氧树脂改性后的改性树脂。
此外，作为粘合剂组合物的各种添加剂，可以使用增塑剂、防静电干扰剂、抗氧剂、颜料、染料等。
(粘合剂组合物)
上述各成分形成的粘合剂组合物具有压敏粘接性和加热固化性，在未固化状态下具有暂时承载各种被粘体的作用。而且，经热固化最终可提供耐冲击性高的固化物，且剪切强度和剥离强度也达到良好的平衡，即使在严酷的湿热条件下也能保持充分的粘接物性。
本发明涉及的粘合剂组合物通过将上述各成分以适当比例混合而得到。混合时，可以先用溶剂将各成分稀释，也可以在混合时加入溶剂。
(粘合片)
本发明涉及的粘合片通过在基材上层积由上述粘合剂组合物构成的粘合剂层而获得。本发明涉及的粘合片的形状可以是带状、标签状等任意的形状。
作为粘合片的基材，例如可使用聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚对苯二甲酸乙二醇酯膜、聚萘二甲酸乙二醇酯膜、聚对苯二甲酸丁二醇酯膜、聚氨酯膜、乙烯乙酸乙烯酯共聚物膜、离子键聚合物树脂膜、乙烯·(甲基)丙烯酸共聚物膜、乙烯·(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚酰亚胺膜等透明膜。也可以使用它们的交联膜。还可以是它们的层积膜。另外，除上述透明膜外，可以使用将它们着色后的不透明膜、氟树脂膜等。
本发明涉及的粘合片被粘贴在各种被粘体上，对被粘体实施必要的加工后，粘合剂层粘合残留于被粘体而从基材剥离。即，在包含将粘合剂层从基材转印到被粘体的工序的过程中使用。因此，基材与粘合剂层接触的面的表面张力优选在40mN/m以下，进一步优选在37mN/m以下，特别优选在35mN/m以下。这种表面张力低的基材可通过适当选择材质来获得，也可通过在基材表面涂布剥离剂实施剥离处理来得到。
作为基材的剥离处理中使用的剥离剂，采用醇酸类、聚硅氧烷类、氟类、不饱和聚酯类、聚烯烃类、蜡类等，特别是醇酸类、聚硅氧烷类、氟类的剥离剂由于具有耐热性，因而优选。
用上述剥离剂对基材的表面进行剥离处理时，将剥离剂直接在无溶剂的状态下，或者进行溶剂稀释或乳化后用凹版涂布机、线棒涂布机、气刀涂布机、辊涂布机等涂布，于常温或加热或实施电子射线固化，再用湿法层合、干法层合、热熔层合、熔融挤出层合、共挤出加工等形成层积体即可。
基材的膜厚通常为10～500μm，优选为15～300μm，特别优选为20～250μm左右。
另外，粘合剂层的厚度通常为1～500μm，优选为5～300μm，特别优选为10～150μm左右。
粘合片的制造方法不受特殊限定，可通过在基材上将构成粘合剂层的组合物涂布并干燥来制造，也可以将粘合剂层设在剥离膜上，将其转印到上述基材来制造。另外，在粘合片使用前，为了保护粘合剂层，还可以预先在粘合剂层的上表面层积剥离膜。此外，在粘合剂层的表面外周部还可以另行设置用于固定环形框等其他夹具的粘合剂层或胶粘带。
下面，关于本发明涉及的粘合片的利用方法，以将该粘合片在半导体装置的制造中使用时的情况为例进行说明。
本发明涉及的半导体装置的制造方法中，首先将本发明涉及的粘合片用环形框固定在切割装置上，将硅晶片的一面置于粘合片的粘合剂层上，轻轻按压，将晶片固定。接着，用切割锯等切割工具将上述硅晶片切断，得到IC芯片。此时的切断深度为硅晶片的厚度和粘合剂层的厚度的合计以及加入了切割锯磨损程度的深度。
接着，如果根据需要进行粘合片的扩展，则IC芯片间隔扩大，从而能更容易地进行IC芯片的拾取。此时，在粘合剂层与基材之间产生偏移，粘合剂层与基材之间的粘接力减少，芯片的拾取性提高。
若按上述操作进行IC芯片的拾取，则可以使被切断的粘合剂层在IC芯片背面粘合残留而从基材剥离。
接着，介以粘合剂层将IC芯片置于管芯焊盘部。管芯焊盘部在放置IC芯片前加热或在放置后立即加热。加热温度通常为80～200℃，优选为100～180℃，加热时间通常为0.1秒～5分，优选为0.5秒～3分，芯片安装压力通常为1kPa～600MPa。
将IC芯片在管芯焊盘部进行芯片安装后，还可以根据需要进一步进行加热。此时的加热条件为在上述加热温度的范围，加热时间通常为1～180分钟，优选为10～120分钟。
另外，也可以不进行芯片安装后的加热处理，使其处于假粘接状态，利用后续工序中进行的树脂密封时的加热来使粘合剂层固化。
经上述工序，粘合剂层固化，可以将IC芯片和管芯焊盘部牢固粘接。粘合剂层在管芯键合条件下流动化，因此，管芯焊盘部的凹凸被充分掩埋，可以防止空隙的产生。
即，得到的安装品由于作为芯片粘合手段的粘合剂固化，且管芯焊盘部的凹凸被充分掩埋，所以即使在苛刻的条件下也能实现充分的封装可靠性和基板安装性。
另外，本发明的粘合剂组合物以及粘合片除了上述使用方法外，还可以在半导体化合物、玻璃、陶瓷、金属等的粘接中使用。
(实施例)
下面，通过实施例说明本发明，但本发明不限于这些实施例。
另外，在以下的实施例和比较例中，如下所述进行“表面安装性的评价”。
“表面安装性的评价”
(1)半导体芯片的制造；
在#2000研磨后的硅晶片(径长150mm、厚150μm)的研磨面上，用带式贴装机(琳得科株式会社制、Adwill RAD2500)粘贴实施例和比较例的粘合片，固定于晶片切割用环形框。当粘合剂组合物含有光聚合引发剂时，接着用紫外线照射装置(琳得科株式会社制、Adwill RAD2000)从基材面照射紫外线(350mW/cm2、190mJ/cm2)。然后，使用切割装置(东京精密株式会社制、AWD-4000B)切割，得到8mm×8mm大小的芯片。切割时的切入量为切入基材20μm。
(2)半导体封装的制造；
作为基板，采用在设有铜箔的层积板(三菱瓦斯化学株式会社制CCL-HL830)的铜箔上形成电路图案并在该图案上具有40μm厚的阻焊剂(太阳油墨制PSR4000 AUS5)的BT基板(株式会社千野技研(株式会社ちの技研)制)。将上述(1)中得到的粘合片上的芯片与粘合剂层一起从基材拾取，在BT基板上介以粘合剂层在120℃、100gf、1秒钟的条件下压接，然后以120℃下1小时、进而140℃下1小时的条件加热，使粘合剂层充分热固化。之后，用模制树脂(京瓷化学株式会社制KE-1100AS3)将BT基板密封并使密封厚度为400μm(密封装置 山田尖端科技株式会社制MPC-06M Trial Press)，在175℃、5小时的条件下使模制树脂固化。然后，将密封后的BT基板粘贴于切割带(琳得科株式会社制Adwill D-510T)，使用切割装置(东京精密株式会社制、AWD-4000B)切成12mm×12mm大小，得到用于可靠性评价的半导体封装。
(3)半导体封装表面安装性的评价；
将得到的半导体封装在85℃、60％RH条件下放置168小时，使其吸湿后，进行3次最高温度为260℃、加热时间为1分钟的IR回流焊(回流焊炉：相模理工制WL-15-20DNX型)，然后通过扫描型超声波探伤装置(日立建机方克株式会社(日立建机フアインテツク株式会社)制Hye-Focus)以及截面观察来评价接合部有无上浮·剥离、有无发生封装开裂。
当在基板/半导体芯片接合部观察到0.25mm2以上的剥离时，判断为剥离，对封装进行25个试验，数出未发生剥离的个数。
另外，构成粘合剂组合物的各成分如下所述。
(A)丙烯酸聚合物：日本合成化学工业株式会社制可朴尼露(コ一ポニ一ル)N-2359-6(Mw：约30万)
(B-1)固体环氧树脂：多官能型环氧树脂(日本化药株式会社制EPPN-502H、环氧当量169g/eq)
(b’-2)液状环氧树脂：双酚A型环氧树脂20phr丙烯酸粒子含有物(株式会社日本触媒制阿朴斯特(エポセツト)BPA328、环氧当量235g/eq)
(b’-3)固体环氧树脂：双酚A型环氧树脂(大日本油墨化学株式会社制EPICLON 1055、环氧当量850g/eq)
(b’-4)固体环氧树脂：DCPD型环氧树脂(大日本油墨化学株式会社制EPICLON HP-7200HH、环氧当量278g/eq)
(C-1)固化剂：酚醛清漆型酚醛树脂(昭和高分子株式会社 昭诺BRG-556、酚性羟基当量104g/eq)
(C-2)固化剂：ザイロツク型酚醛树脂(三井化学株式会社 米勒克斯(ミレツクス)XLC-4L、酚性羟基当量168g/eq)
(C-3)固化剂：多官能型酚醛树脂(明和化成株式会社MEH-7500、酚性羟基当量97g/eq)
(D)固化促进剂：咪唑(四国化成工业株式会社制、克阿唑(キユアゾ一ル)2PHZ)
(E)硅烷偶联剂(三菱化学株式会社制MKC硅酸酯MSEP2、环氧当量222g/eq)
(G)无机填充剂：株式会社阿得马特斯(株式会社アドマテツクス)制 阿得马方(アドマファイン)SC2050
(H)能量线聚合性化合物：二环戊二烯二甲氧基二丙烯酸酯(日本化药株式会社制KAYARAD R-684)
(I)光聚合引发剂：α-羟基环己基苯基酮(汽巴精化学株式会社制 易加干184)
另外，作为粘合片的基材，使用聚乙烯膜(厚100μm、表面张力33mN/m)。
使用表1记载的组成的粘合剂组合物。表中，数值表示固体成分换算的重量份。将表1记载的组成的粘合剂组合物的MEK(甲乙酮)溶液(固体浓度61％wt)在经聚硅氧烷处理的剥离膜(琳得科株式会社制SP-PET3811(S))上涂布，形成30μm的膜厚，干燥(干燥条件：烘箱中100℃、1分钟)，然后与基材贴合，将粘合剂层转印到基材上，得到粘合片。
用得到的粘合片进行表面安装性的评价。结果如表2所示。
[表1]
Figure A20081008833600201
单位：重量份(固体成分换算值)
[表2]
  表面安装性评价结果
  实施例1   25/25
  实施例2   25/25
  实施例3   25/25
  实施例4   25/25
  实施例5   25/25
  实施例6   25/25
  实施例7   25/25
  比较例1   7/25
  比较例2   5/25
接合部无上浮·剥离且未发生封装开裂的个数/进行试验的个数
产业上利用的可能性
本发明提供安装有薄型化半导体芯片的封装即使暴露在严酷的回流焊条件下也能实现高封装可靠性的粘合剂组合物和具有由该粘合剂组合物构成的粘合剂层的粘合片以及使用该粘合片的半导体装置的制造方法。

Claims (4)

1.粘合剂组合物，其特征在于，含有丙烯酸聚合物(A)、环氧当量为180g/eq以下的环氧树脂(B)以及固化剂(C)。
2.如权利要求1所述的粘合剂组合物，其特征在于，所述固化剂(C)是具有2个以上酚性羟基且酚性羟基当量为103g/eq以下的化合物。
3.粘合片，其特征在于，在基材上形成由权利要求1或2所述的粘合剂组合物构成的粘合剂层而获得。
4.半导体装置的制造方法，其特征在于，包括如下工序：在权利要求3所述的粘合片的粘合剂层上粘贴半导体晶片，将所述半导体晶片切割成IC芯片，使粘合剂层粘合残留于所述IC芯片背面而从基材剥离，将所述IC芯片介以所述粘合剂层而热压接于管芯焊盘部上。
CNA2008100883362A 2007-03-29 2008-03-28 粘合剂组合物、粘合片以及半导体装置的制造方法 Pending CN101275062A (zh)

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KR101035873B1 (ko) * 2008-12-24 2011-05-19 제일모직주식회사 고온 속경화형 접착필름 조성물 및 이를 이용한 접착필름
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Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JP3739488B2 (ja) * 1996-06-25 2006-01-25 リンテック株式会社 粘接着テープおよびその使用方法
JP4275221B2 (ja) * 1998-07-06 2009-06-10 リンテック株式会社 粘接着剤組成物および粘接着シート
ATE370209T1 (de) * 1999-06-18 2007-09-15 Hitachi Chemical Co Ltd Klebstoff, klebstoffgegenstand, schaltungssubstrat für halbleitermontage mit einem klebstoff und eine halbleiteranordnung die diesen enthält
KR100931742B1 (ko) * 2000-02-15 2009-12-14 히다치 가세고교 가부시끼가이샤 접착제 조성물, 그 제조 방법, 이것을 이용한 접착 필름, 반도체 탑재용 기판 및 반도체 장치
JP3711842B2 (ja) * 2000-06-01 2005-11-02 ソニーケミカル株式会社 異方性導電接続材料及び接続構造体
JP3912076B2 (ja) * 2001-11-09 2007-05-09 日立化成工業株式会社 接着シートならびに半導体装置およびその製造方法
JP4244777B2 (ja) * 2002-10-18 2009-03-25 日立化成工業株式会社 硬化性樹脂の硬化促進剤、硬化性樹脂組成物、電子部品装置、及びホスフィン誘導体の製造方法
JP4283596B2 (ja) * 2003-05-29 2009-06-24 日東電工株式会社 チップ状ワークの固定方法
US20050267286A1 (en) * 2003-10-20 2005-12-01 Shinya Nakamura Curing accelerator for curing resin, curing resin composition, electronic component device and method for producing phosphine derivative
JP4421972B2 (ja) * 2004-04-30 2010-02-24 日東電工株式会社 半導体装置の製法
JP3754700B1 (ja) * 2004-09-02 2006-03-15 住友ベークライト株式会社 半導体用接着フィルム及びこれを用いた半導体装置
JP2006269887A (ja) * 2005-03-25 2006-10-05 Sumitomo Bakelite Co Ltd 半導体用接着フィルム及びこれを用いた半導体装置

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