CN101271862A - 存储器元件及其制造方法 - Google Patents
存储器元件及其制造方法 Download PDFInfo
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- CN101271862A CN101271862A CNA2007100877973A CN200710087797A CN101271862A CN 101271862 A CN101271862 A CN 101271862A CN A2007100877973 A CNA2007100877973 A CN A2007100877973A CN 200710087797 A CN200710087797 A CN 200710087797A CN 101271862 A CN101271862 A CN 101271862A
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 152
- 238000000034 method Methods 0.000 claims description 51
- 238000010276 construction Methods 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910010037 TiAlN Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910008599 TiW Inorganic materials 0.000 claims description 4
- 229910004166 TaN Inorganic materials 0.000 claims description 3
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
Claims (30)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710087797A CN100578753C (zh) | 2007-03-19 | 2007-03-19 | 存储器元件及其制造方法 |
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CN200710087797A CN100578753C (zh) | 2007-03-19 | 2007-03-19 | 存储器元件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101271862A true CN101271862A (zh) | 2008-09-24 |
CN100578753C CN100578753C (zh) | 2010-01-06 |
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CN200710087797A Expired - Fee Related CN100578753C (zh) | 2007-03-19 | 2007-03-19 | 存储器元件及其制造方法 |
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CN (1) | CN100578753C (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103427022A (zh) * | 2013-08-22 | 2013-12-04 | 中国科学院上海微***与信息技术研究所 | 包含三明治型电极的相变存储结构及其制备方法 |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
CN105226181A (zh) * | 2015-09-01 | 2016-01-06 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428525A (zh) * | 2015-11-06 | 2016-03-23 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428529A (zh) * | 2015-12-16 | 2016-03-23 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428533B (zh) * | 2015-12-24 | 2018-05-15 | 江苏时代全芯存储科技有限公司 | 相变化记忆体的制造方法 |
CN108520879A (zh) * | 2018-06-12 | 2018-09-11 | 湘潭大学 | 一种新型高密度铁电存储器单元 |
CN108550696A (zh) * | 2016-03-08 | 2018-09-18 | 江苏时代全芯存储科技有限公司 | 相变化记忆体 |
-
2007
- 2007-03-19 CN CN200710087797A patent/CN100578753C/zh not_active Expired - Fee Related
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
CN103427022B (zh) * | 2013-08-22 | 2016-07-06 | 中国科学院上海微***与信息技术研究所 | 包含三明治型电极的相变存储结构的制备方法 |
CN103427022A (zh) * | 2013-08-22 | 2013-12-04 | 中国科学院上海微***与信息技术研究所 | 包含三明治型电极的相变存储结构及其制备方法 |
CN105226181A (zh) * | 2015-09-01 | 2016-01-06 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428525B (zh) * | 2015-11-06 | 2018-03-02 | 江苏时代全芯存储科技有限公司 | 相变化记忆体及其制造方法 |
CN105428525A (zh) * | 2015-11-06 | 2016-03-23 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428529A (zh) * | 2015-12-16 | 2016-03-23 | 宁波时代全芯科技有限公司 | 相变化记忆体及其制造方法 |
CN105428529B (zh) * | 2015-12-16 | 2018-04-13 | 江苏时代全芯存储科技有限公司 | 相变化记忆体的制造方法 |
CN108172684A (zh) * | 2015-12-16 | 2018-06-15 | 江苏时代全芯存储科技有限公司 | 相变化记忆体及其制造方法 |
CN108172684B (zh) * | 2015-12-16 | 2021-01-05 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体及其制造方法 |
CN105428533B (zh) * | 2015-12-24 | 2018-05-15 | 江苏时代全芯存储科技有限公司 | 相变化记忆体的制造方法 |
CN108123035A (zh) * | 2015-12-24 | 2018-06-05 | 江苏时代全芯存储科技有限公司 | 相变化记忆体 |
CN108123035B (zh) * | 2015-12-24 | 2021-04-06 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体 |
CN108550696A (zh) * | 2016-03-08 | 2018-09-18 | 江苏时代全芯存储科技有限公司 | 相变化记忆体 |
CN108550696B (zh) * | 2016-03-08 | 2022-02-25 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体 |
CN108520879A (zh) * | 2018-06-12 | 2018-09-11 | 湘潭大学 | 一种新型高密度铁电存储器单元 |
CN108520879B (zh) * | 2018-06-12 | 2020-09-29 | 湘潭大学 | 一种高密度铁电存储器单元 |
Also Published As
Publication number | Publication date |
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CN100578753C (zh) | 2010-01-06 |
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