CN101256051A - Heat treatment device - Google Patents

Heat treatment device Download PDF

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Publication number
CN101256051A
CN101256051A CNA2008100815810A CN200810081581A CN101256051A CN 101256051 A CN101256051 A CN 101256051A CN A2008100815810 A CNA2008100815810 A CN A2008100815810A CN 200810081581 A CN200810081581 A CN 200810081581A CN 101256051 A CN101256051 A CN 101256051A
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Prior art keywords
roller
way
glass substrate
hardness
temperature
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CNA2008100815810A
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CN101256051B (en
Inventor
植松克仁
森田真登
西木直巳
桐原信幸
石尾博明
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20Constructional details
    • H01J11/34Vessels, containers or parts thereof, e.g. substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00Apparatus and processes for manufacture of discharge tubes
    • H01J2209/38Control of maintenance of pressure in the vessel
    • H01J2209/389Degassing
    • H01J2209/3896Degassing by heating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

In the heat processing device, a plurality heat processing chambers (10a, 10b) for heat processing objects on a glass substrate (11) are connected in a specific direction. Each of the heat processing chambers (10a, 10b) is provided with first and second roll channels (12a, 12b) for placing the glass substrate (11) above for transmitting. The first roll channel (12a) is a roll channel with a vickers hardness increasing with the rise of temperature in the heat processing temperature scope, a second roll channel (12b) is a roll channel with a vickers hardness decreasing with the rise of temperature. Any of the first roll channel (12a) or the first roll channel (12b) is arranged in each of the heat processing chambers (10a, 10b), such that the hardness difference between the vicker hardness thereof and the vicker hardness of the glass substrate at a predetermined temperature of heat processing temperature is small.

Description

Annealing device
Technical field
The present invention relates to employed annealing device, the particularly annealing device that transmits glass substrate, heat-treats simultaneously with roller-way in the manufacturing of plasm display panel etc.
Background technology
Plasma display apparatus is because to 37 inches~103 inches etc. large scale development, price continues to descend simultaneously, therefore popularizes just rapidly.The plasm display panel of plasma display apparatus is constituted 2 flat glass substrates configured electrodes regularly, simultaneously between adjacent electrode, dividing plate is set, and a plurality of discharge cells that formation utilizes dividing plate to separate between two glass substrates (being called front panel and backplate), inclosure is the gas of main component with neon, and to the voltage that each discharge cell applies, discharge selectively with luminous by control.
Make such plasm display panel, need form dividing plate, medium, lead-in wire, electrode, fluorophor, resistive element etc. on each glass substrate, these mainly are to form by photoetching formation thick film figure and heat treatment after this.
For example, in order to form dividing plate, the separator material of coating pasty state on whole of substrate, make its drying, with the mask of photoresists, carry out sandblast thereon by this mask by lithographic printing formation dividing plate figure, after removing separator material selectively, burn till.In addition, in order to form cathode electrode, printing makes its drying to the pastes of metal dust adding glass powder and binding agent and solvent on substrate, burns till.
According to panel construction and form member, coating that repeated multiple times is such or printing, drying, process of thermal treatment such as burn till.For used annealing device in the heat treatment that forms electrode, medium, fluorophor etc., roller-way conveying type annealing device is arranged.
Figure 6 shows that the formation of roller-way conveying type annealing device.Shown in Fig. 6 (a), tunnel type a plurality of thermal chamber 10 is connected in series, in each thermal chamber 10, be provided with a plurality of roller-ways 12, formed the glass substrate 11 (below, abbreviate glass substrate 11 as) of heat treatment object thing (not shown) above these a plurality of roller-ways 12 are used for being transmitted in.
Each thermal chamber 10 on top and the bottom bottom heater 13 and top heater 14 with indoor heating usefulness are set, in the above, following and side covers with heat-barrier material 15.Form a plurality of roller-ways 12 with the hear resistance ceramic material, and be configured in the top of bottom heater 13 and below top heater 14, utilize motor (not shown) to be rotated, the glass substrate of placing 11 is transmitted to certain orientation.
With a plurality of thermal chambers 10 be divided into glass substrate 11 be heated to the thermal treatment zone X of set point of temperature, slowly the cooling slow cooling district Y and the cooling zone Z that is cooled to the normal temperature degree, glass substrate 11 transmits in these thermals treatment zone X and slow cooling district Y and cooling zone Z successively, and in accordance with regulations temperature curve is heat-treated in the meantime.
Fig. 6 (b) is depicted as an example of the temperature curve that is suitable for the plasm display panel manufacturing.In elapsed time when transverse axis is represented the glass substrate transmission, the longitudinal axis is represented the surface temperature of glass substrate.Glass substrate slowly heats up from room temperature during transmitting, and reaches 550~600 ℃ of peak temperatures, and cooling reaches room temperature then.
As the above-mentioned method of utilizing roller-way to transmit glass substrate like that, the method that directly is placed on the roller-way is arranged; And be placed on the accessory plate of heat resistant glass of being called transfer plate etc., again transfer plate be placed on the method (for example, opening flat 4-182326 communique) on the roller-way with reference to the spy.
But, utilizing roller-way to transmit in above-mentioned two kinds of methods of glass substrate, owing to use the method for transfer plate to come glass substrate,, consume original unwanted power therefore in order to heat this transfer plate by transfer plate.In addition,, must exploitation be fit to the heat treated large-scale transfer plate of large-size glass substrate along with the maximization of plasm display panel, must cost cost and time in order to make it.
According to this viewpoint, the method that glass substrate directly is placed on the roller-way without transfer plate is more favourable.But in the method, can produce because of contact the mechanical injuries of scar of causing etc. with roller-way, be difficult to satisfy desired quality and characteristic glass substrate.Particularly, for surface in a pair of glass substrate, that constitute the front panel of display surface, the requirement height of its quality etc. is difficult to satisfy.
Summary of the invention
The present invention in view of the above-mentioned problems, its purpose is to provide a kind of and glass substrate directly is being placed on the annealing device that can suppress mechanical injuries when transmitting on the roller-way.
In order to achieve the above object, annealing device of the present invention, the thermal chamber of this annealing device has a plurality of transmission roller-ways that transmit above being placed on glass substrate just in inside, and with of the direction of transfer connection of a plurality of aforementioned hot process chambers along aforementioned glass substrate, and the heat treatment object thing that will form on the glass substrate that transmits is heat-treated, wherein, as aforementioned transmission roller-way, the use first transmission roller-way that Vicker-hardness increases along with the temperature rising in aforementioned heat treated temperature range, and Vicker-hardness rise along with temperature and reduce second transmit roller-way, and in each thermal chamber that the heat treatment temperature of aforementioned glass substrate is set, select aforementioned first transmit that roller-way or aforementioned second transmits roller-way any transmit roller-way and arrange, make with this design temperature under the difference of hardness of Vicker-hardness of aforementioned glass substrate less.In view of the above, owing to select roller-way with the design temperature (atmosphere temperature) of each thermal chamber and relation for the difference of hardness of glass substrate, so the mechanical injuries such as scar that can suppress to produce on the glass substrate.
First transmits roller-way is arranged on design temperature less than 250 ℃ thermal chamber, less than the Vicker-hardness in 250 ℃ the temperature range be Vicker-hardness with aforementioned glass substrate be benchmark+20% in, second transmits roller-way is arranged on the thermal chamber of design temperature more than 250 ℃, the Vicker-hardness in the temperature range more than 250 ℃ be the Vicker-hardness with aforementioned glass substrate be benchmark+20% in.By like this, suppress the mechanical injuries of glass substrate really.
Be preferably in glass substrate and be when being made by high melting point glass, first to transmit roller-way be to be the sintered body of main component with carborundum, and second to transmit roller-way be to be the sintered body of main component with the mullite.
Transmit roller-way with second and constitute and have the arrangement pitch D ' that represents with following formula (mm), and unit are load W (g/cm 2) be below 30.
D’=A/(B-1),W=C/(B×F×S)
In the formula, A: the direction of advance length (mm) of glass substrate, B: the roller-way radical of supporting glass substrate, C: the weight of glass substrate (g), F: the length of the width that glass substrate contacts with roller-way (mm), S: the length of the direction of advance that glass substrate contacts with roller-way (mm).Like this,, relax the load of per unit area, can further suppress scar by reducing the arrangement pitch D ' of the second transmission roller-way, increase to support area.
Description of drawings
Figure 1 shows that the concise and to the point formation cutaway view of the annealing device that the invention process form 1 is relevant.
Figure 2 shows that the concise and to the point formation cutaway view of the annealing device that the invention process form 2 is relevant.
Fig. 3 is the temperature of the glass substrate of heat-treating and the correlation diagram of scar number.
Fig. 4 is about the temperature of the material of glass substrate of heat-treating and transmission roller-way and the correlation diagram of Vicker-hardness.
Fig. 5 for about the glass substrate of heat-treating for the load that transmits roller-way and the correlation diagram of scar number.
Figure 6 shows that the concise and to the point formation cutaway view and the temperature profile of annealing device in the past.
The specific embodiment
Below, describe example of the present invention with reference to the accompanying drawings in detail.
Figure 1 shows that the cutaway view that the part of the annealing device in the invention process form 1 is amplified.Integral body about this annealing device constitutes, since identical with the front with the annealing device in the past of Fig. 6 explanation, therefore also with reference to Fig. 6.
The tunnel type a plurality of thermal chamber 10 that is connected in series, and in each thermal chamber 10, be provided with a plurality of roller-ways 12, above being used for being transmitted in, these a plurality of roller-ways 12 formed the glass substrate 11 of heat treatment object thing (not shown).
Each thermal chamber 10 is provided with bottom heater 13 and top heater 14 with indoor heating usefulness on top and the bottom, in the above, following and side covers with heat-barrier material 15.A plurality of roller-ways 12 are configured in the top of bottom heater 13 and below top heater 14, utilize motor (not shown) to be rotated, and the glass substrate of placing 11 is transmitted to certain orientation.
With a plurality of thermal chambers 10 be divided into glass substrate 11 be heated to the thermal treatment zone X of set point of temperature, slowly the cooling slow cooling district Y and the cooling zone Z that is cooled to the normal temperature degree, glass substrate 11 transmits in these thermals treatment zone X and slow cooling district Y and cooling zone Z successively, and (about 60~90 minutes) temperature curve is in accordance with regulations heat-treated in the meantime.
In Fig. 1, only the highest design temperature that will heat-treat of expression for less than 250 ℃ thermal chamber 10a, with the highest design temperature be two continuous Room of thermal chamber 10b more than 250 ℃.
Roller-way 12a in the thermal chamber 10a is to be the sintered body of main component with carborundum (SiC).Roller-way 12b in the thermal chamber 10b is with the material different with roller-way 12a, is that mullite is the sintered body of main component.Roller-way 12a is identical with the external diameter R equidimension of 12b, and arrangement pitch D is also identical.
Figure 2 shows that the cutaway view that the part of the annealing device in the invention process form 2 is amplified.The difference of the annealing device of annealing device of this example 2 and example 1 is, with the highest design temperature for comparing less than the arrangement pitch D of the roller-way 12a in 250 ℃ the thermal chamber 10a, making the highest design temperature is that the arrangement pitch D ' of the roller-way 12b in the thermal chamber 10b more than 250 ℃ reduces.Roller-way 12a is identical with the external diameter R equidimension of 12b.
Below enumerate specific embodiment, the heat treatment with the annealing device of these examples 1 and example 2 is described.
(embodiment 1)
In annealing device with Fig. 1 and formation shown in Figure 6, use the heater up and down of each thermal chamber, set maximum temperature and reach 600 ℃ heat-treat condition,, establish the glass substrate that heats transmission with 15 ℃/minute as the intensification condition that reaches maximum temperature.The transfer rate of glass substrate is about 15mm/s.
For the roller-way that is provided with in less than 250 ℃ thermal chamber (below, be called the 1st thermal chamber) (below, be called the 1st roller-way), is to be the sintered body (SiC: about 78 weight %, Al of main component with carborundum at the highest design temperature of heat-treating 2O 3: about 12 weight %, SiO 2: about 8 weight %), length is 1.8m, and external diameter R is 38mm, and interval D is installed as 350mm.The ratio less than 250 ℃ the 1st thermal chamber like this is whole about 10%.
The roller-way that in the highest design temperature is thermal chamber (below, be called the 2nd thermal chamber) more than 250 ℃, is provided with (below, be called the 2nd roller-way), be to be the sintered body (Al of main component with the mullite 2O 3: about 83 weight %, SiO 2: about 16 weight %), length is 1.8m, and external diameter R is 38mm, and interval D is installed as 350mm.
Glass substrate itself be the rectangular flat of size 2.5m * 1.5m * 3mm, make by high melting point glass, density is 2.8g/cm 3, linear expansion coefficient is 82 * 10 -7/ ℃, Young's modulus is 7.13 * 10 4N/mm 2, Poisson's ratio is 0.2.Gross weight under the state that dividing plate, medium, lead-in wire, electrode, resistive element etc. are formed as the thick film figure is about 35kg.This glass substrate directly is placed on the 1st and the 2nd roller-way, and as direction of advance, one side transmits, one side is heat-treated with the substrate length direction.
The core of the glass substrate after the heat treatment cuts out 500mm * 500mm as sample, estimates.Promptly, from the back portion that directly contacts with the 1st and the 2nd roller-way with the ethanol wiping, obtain attachments such as dust, check the scar that has on the face of 200mm * 200mm scope with digital microscope (VHX600 number of making of キ one エ Application ス (Qi Ensi), 450 multiplying powers).
Since the shape of scar nearly all be along the direction of advance of glass substrate scar, be the scar of wire, therefore decision is estimated scar with length.In addition, have problems and observer is also formed the viewpoint of the size that offends the eye in intensity when assembling, will be defined as scar more than the 50 μ m as plasm display panel.
To meet this definition scar, be that the number of the above scar of length 50 μ m is counted, be converted into per unit area (m 2) number.In order to compare, obtain the number of the scar when using the annealing device that only changes roller-way to heat-treat equally too.It is the numbers of the both sides of the 1st and the 2nd roller-way scar of (comparative example 2) when the both sides of (comparative example 1) and the 1st and the 2nd roller-way are the mullite sintered body when being carborundum sintered body.Show the result in the following table 1.
Table 1
As shown in Table 1, annealing device according to embodiment 1, as described above, glass substrate produce thermal deformation and with the temperature province of the difference of hardness of roller-way in, compare with comparative example 1,2, can reduce the scar number, even compare with the comparative example 2 that the scar number is less, also can reduce about about 40%.
(embodiment 2)
In annealing device with Fig. 2 and formation shown in Figure 6, identical with embodiment 1, set maximum temperature and reach 600 ℃ heat-treat condition, as the intensification condition that reaches maximum temperature, establish the glass substrate that heats transmission with 15 ℃/minute.
At 1st roller-way of the highest design temperature for being provided with in less than 250 ℃ the 1st thermal chamber, be to be the sintered body of main component with carborundum, have composition similarly to Example 1, length is 1.8m, external diameter R is 38mm, and interval D is installed as 350mm.
The 2nd roller-way that is provided with in the highest design temperature is the 2nd thermal chamber more than 250 ℃ is to be the sintered body of main component with the mullite, has composition similarly to Example 1, length is 1.8m, external diameter R is 38mm, still, with interval D ' install as 150mm.
In this annealing device, similarly to Example 1 glass substrate is identical with embodiment 1, directly be placed on the 1st and the 2nd roller-way, as direction of advance, one side transmits, one side is heat-treated with the substrate length direction.In the 2nd thermal chamber, support glass substrate with 11 the 2nd roller-ways all the time.
The core of the glass substrate after the heat treatment cuts out 500mm * 500mm as sample, estimates similarly to Example 1.The result is shown in the following table 2 with the result of embodiment 1.
Table 2
Figure A20081008158100091
As shown in Table 2,, compare, the scar number can be reduced about 80% with the annealing device of embodiment 1 according to the annealing device of embodiment 2.
In addition, in each annealing device of above-mentioned comparative example 1 and comparative example 2, transmit the polylith glass substrate successively, heat-treat, glass substrate takes out from some conveying ends that 100 ℃ to 550 ℃ the wall every 50 ℃ position is provided with respectively, identical with embodiment 1, check the scar number of mid portion at the back side of the 1st and the 2nd roller-way contact.The result is shown in respectively in Fig. 3 (a) and (b).Transverse axis is represented the highest design temperature of annealing device chamber, and the longitudinal axis is represented per unit area (m 2) the scar number.
Shown in Fig. 3 (a), in the annealing device of comparative example 1, promptly the both sides of the 1st and the 2nd roller-way are when being the sintered body (below, be called carborundum sintered body) of main component with carborundum, sharply increase from 250 ℃ of scar numbers approximately, reach unexpectedly near about 4000.
Shown in Fig. 3 (b), in the annealing device of comparative example 2, promptly the both sides of the 1st and the 2nd roller-way be with the mullite be main component sintered body (below, be called the mullite sintered body) time, even undiscovered low-temp. portion has also been found the scar generation in Fig. 3 (a), but do not find the situation from the rapid increase of 250 ℃ of scar numbers of discovery among Fig. 3 (a).
Here, for above-mentioned like that glass substrate directly is placed on when heat-treating on the roller-way, the material high melting point glass of glass substrate and the combination of roller-way material carborundum sintered body or mullite sintered body, the relation of atmosphere temperature (material temperature) and difference of hardness and scar is discussed.
Generally know that the difference of hardness of mechanical injuries such as scar and contact-making surface has relation, if difference of hardness increases, then mechanical injuries also increase in addition.Know that in addition the hardness of material changes with temperature, for example, the hardness of glass material raises along with temperature and reduces.As the representation example of hardness, Mohs' hardness and Vicker-hardness are arranged.
According at normal temperatures with adamantine hardness as 10 Mohs' hardness, high melting point glass is determined as hardness 7, carborundum is determined as hardness 9.But, demonstrate lower value though we can say high melting point glass than carborundum, in the combination through the high melting point glass of fine grinding and carborundum, high melting point glass is trace in spite of wound not necessarily.
Therefore, measure Vicker-hardness for high melting point glass, carborundum sintered body, mullite sintered body respectively.Before measuring, high melting point glass coating cerium oxide abrasive liquid compresses with the sanding machine that rotates with 30rpm, by grinding like this, surface roughness (center line average roughness) Ra is become below the 5 μ m.Carborundum sintered body and mullite sintered body grind with diamond abrasive tool, and surface roughness (center line average roughness) Ra is become below the 5 μ m.High melting point glass, carborundum sintered body, the mullite sintered body that uses as sample be with embodiment 1 or embodiment 2 in the identical glass substrate and the roller-way that use.
In order to measure, use the Vicker-hardness analyzer (ア カ シ (A Kaxi) make AVK-HF number) of band heating microscope, the diamond briquetting of plane set-hammer shape load and the sample with 5kgf compressed, according to forming pyramidal impression, obtain with the value of load with the Vicker-hardness of the ratio definition of the surface area of impression.But, because high melting point glass, carborundum sintered body, mullite sintered body are respectively fragile materials,, therefore get 5 measuring points because of be full of cracks etc. takes place impression, with the mean value of this measured value of 5 as Vicker-hardness.Figure 4 shows that the result.Transverse axis presentation surface temperature, the longitudinal axis is represented Vicker-hardness.
In Fig. 4, the hardness of high melting point glass and mullite sintered body rises with temperature and reduces, otherwise the hardness of carborundum sintered body increases with the temperature rising.That is, along with temperature rises, the difference of hardness of high melting point glass and carborundum sintered body increases, and the difference of hardness of opposite high melting point glass and mullite sintered body reduces.
At first, consideration from the rapid situation (with reference to Fig. 3 (a)) that increases of about 250 ℃ of scar numbers, is investigated the result of Fig. 4 simultaneously when the both sides of the 1st and the 2nd roller-way are carborundum sintered body.In the time of about 250 ℃, carborundum sintered body equates that with the hardness of mullite sintered body in the temperature range lower than it, carborundum sintered body is less with respect to the difference of hardness of high melting point glass, in the temperature range higher than it, the mullite sintered body is less with respect to the difference of hardness of high melting point glass.
These results represent that in order to suppress scar, for the 1st roller-way that uses, the most handy carborundum sintered body is for the 2nd roller-way that uses, the most handy mullite sintered body in than about 250 ℃ of high temperature ranges in than about 250 ℃ of low temperature ranges.
When carborundum sintered body equates with the hardness of mullite sintered body, its hardness the hardness of the high melting point glass of uniform temp+20% in.In Fig. 4, also illustrate hardness with high melting point glass and be benchmark+calculated value of 20% Vicker-hardness.Embodiment 1 and embodiment 2 be be in hardness with this high melting point glass be benchmark+material in the scope of 20% Vicker-hardness is carborundum sintered body, mullite sintered body, considers temperature range again, and roller-way is selected, and can suppress scar.
In addition, be not limited to the said the 1st and the 2nd thermal chamber (corresponding with thermal chamber 10a, the 10b of Fig. 1, Fig. 2) among embodiment 1 and the embodiment 2, thermal chamber and roller-way to the Zone Full in the annealing device can both adopt above-mentioned structure.But if the Vicker-hardness of roller-way is below the Vicker-hardness of glass substrate, then because roller-way weares and teares, and the manufacturing of article on plasma dignity plate probably will bring bigger fault, it is unsuitable therefore roller-way being selected such material.
Below, annealing device for formation shown in Figure 2, promptly with the 1st thermal chamber in the arrangement pitch D of the 1st roller-way (carborundum sintered body) that the is provided with annealing device of comparing, make the arrangement pitch D ' of the 2nd roller-way (mullite sintered body) that is provided with in the 2nd thermal chamber to reduce, the size of arrangement pitch D ' is discussed.
Change various arrangement pitch D ', assemble a plurality of annealing devices, in each annealing device, with embodiment 2 identical (promptly carrying out similarly to Example 1), glass substrate directly is placed on the 1st and the 2nd roller-way, with the substrate length direction as direction of advance, one side transmits, and one side is heat-treated.Glass substrate is 2.5m * 1.5m in vertical view, heavy 35kg, and the external diameter R of roller-way is 38mm, long 1.8m.
For the back side of the 1st and the 2nd roller-way of each glass substrate after heat treatment contact, with embodiment 1 same detection per unit area (m 2) the scar number, the arrangement pitch D ' that the 2nd roller-way is discussed simultaneously (mm) with the load W (g/cm of per unit area 2) relation.
D’=A/(B-1),W=C/(B×F×S)
In the formula, A: the direction of advance length (mm) of glass substrate, B: the roller-way radical of supporting glass substrate, C: the weight of glass substrate (g), F: the length of the width that glass substrate contacts with roller-way (mm), S: the length of the direction of advance that glass substrate contacts with roller-way (mm).
Here, the load W of per unit area is with corresponding from the counter-force of the 2nd roller-way.Reduce the arrangement pitch D ' of the 2nd roller-way, increase, thereby contact area increases therefore calculating and the corresponding contact area of roller-way radical owing to mean the roller-way radical of supporting glass substrate.
The length S of the direction of advance that glass substrate contacts with roller-way and { (1-vA 2)/EA+ (1-vB 21/2 power of)/EB} is proportional, and this by hertz formula as can be known.Specifically represent with following formula.
S=0.366×{(1-vA 2)/EA+(1-vB 2)/EB} 1/2
VA: the Poisson's ratio of high melting point glass
EA: the Young's modulus of high melting point glass
VB: the Poisson's ratio of mullite
EB: the Young's modulus of mullite
Obtain the length S of direction of advance by this formula, the length F and the roller-way radical B of width multiplied each other, and calculating contact area (B * F * S).Use the Poisson's ratio (vA) of high melting point glass: 0.22, Young's modulus (EA): 7.13 * 10 4N/mm 2, use the Poisson's ratio (vB) of mullite in addition: 0.24, Young's modulus (EB): 39.2 * 10 4N/mm 2Physics value.
Figure 5 shows that the load of calculating and the relation of scar number.In Fig. 5, if the load of per unit area surpasses 30g/cm 2, then scar sharply increases.This expression wishes to arrange like this 2nd roller-way (mullite sintered body) in order to suppress scar, makes the load of per unit area become 30g/cm 2Below.
As mentioned above, annealing device of the present invention, because the design temperature (atmosphere temperature) that uses each thermal chamber select roller-way with the relation with respect to the difference of hardness of glass substrate, even so glass substrate directly be placed on the roller-way transmit, also can suppress mechanical injuries such as scar.Like this, be useful for the productivity ratio that improves plasm display panel etc.

Claims (4)

1. annealing device, the thermal chamber of this annealing device has a plurality of transmission roller-ways that transmit above being placed on glass substrate just in inside, and with of the direction of transfer connection of a plurality of described thermal chambers along described glass substrate, and the heat treatment object thing that will form on the glass substrate that transmits is heat-treated, it is characterized in that
As transmitting roller-way, use Vicker-hardness in described heat treated temperature range rises and first transmission roller-way of increase and the second transmission roller-way that Vicker-hardness reduces along with the temperature rising along with temperature, and in each thermal chamber that the heat treatment temperature of described glass substrate is set, select described first transmit that roller-way or described second transmits roller-way any transmit roller-way and arrange, make with this design temperature under the difference of hardness of Vicker-hardness of described glass substrate less.
2. annealing device as claimed in claim 1 is characterized in that,
First transmits roller-way is arranged at design temperature less than 250 ℃ thermal chamber, less than the Vicker-hardness in 250 ℃ the temperature range be Vicker-hardness with described glass substrate be benchmark+20% in, second transmits roller-way is arranged at the thermal chamber of design temperature more than 250 ℃, the Vicker-hardness in the temperature range more than 250 ℃ be the Vicker-hardness with described glass substrate be benchmark+20% in.
3. as each described annealing device of claim 1 or 2, it is characterized in that,
Glass substrate is made by high melting point glass, and the first transmission roller-way is to be the sintered body of main component with carborundum, and the second transmission roller-way is to be the sintered body of main component with the mullite.
4. as each described annealing device of claim 1 to 3, it is characterized in that,
Transmit roller-way with second and constitute and have the arrangement pitch D ' that represents with following formula (mm), and unit are load W (g/cm 2) be below 30,
D’=A/(B-1)
W=C/(B×F×S)
In the formula, A: the direction of advance length (mm) of glass substrate, B: the roller-way radical of supporting glass substrate, C: the weight of glass substrate (g), F: the length of the width that glass substrate contacts with roller-way (mm), S: the length of the direction of advance that glass substrate contacts with roller-way (mm).
CN2008100815810A 2007-03-01 2008-02-27 Heat treatment device Expired - Fee Related CN101256051B (en)

Applications Claiming Priority (3)

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CN105021033A (en) * 2014-04-28 2015-11-04 三星电机株式会社 Firing furnace
CN107906950A (en) * 2017-12-28 2018-04-13 洛阳北玻硅巢装备技术有限公司 One kind fires foamed ceramic slow cooling roller kilns
CN107917615A (en) * 2017-12-28 2018-04-17 洛阳北玻硅巢装备技术有限公司 One kind fires exterior insulation multisection type roller kilns
CN110655055A (en) * 2018-06-29 2020-01-07 山西贝特瑞新能源科技有限公司 Continuous carbide furnace device of negative electrode material

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CN103534215A (en) * 2011-05-16 2014-01-22 旭硝子株式会社 Method for detecting defect of glass ribbon conveying roll and device for conveying glass ribbon
CN103534215B (en) * 2011-05-16 2016-03-02 旭硝子株式会社 The defect defining method of the conveying roller of glass ribbon and glass ribbon e Foerderanlage
CN105021033A (en) * 2014-04-28 2015-11-04 三星电机株式会社 Firing furnace
CN107906950A (en) * 2017-12-28 2018-04-13 洛阳北玻硅巢装备技术有限公司 One kind fires foamed ceramic slow cooling roller kilns
CN107917615A (en) * 2017-12-28 2018-04-17 洛阳北玻硅巢装备技术有限公司 One kind fires exterior insulation multisection type roller kilns
CN107917615B (en) * 2017-12-28 2024-01-30 洛阳北玻轻晶石技术有限公司 Multistage roller kiln for firing foamed ceramic insulation board
CN107906950B (en) * 2017-12-28 2024-01-30 洛阳北玻轻晶石技术有限公司 Slow cooling roller kiln for firing foamed ceramics
CN110655055A (en) * 2018-06-29 2020-01-07 山西贝特瑞新能源科技有限公司 Continuous carbide furnace device of negative electrode material

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