CN101236985B - 一种具有共平面电极表面的存储单元装置及其制造方法 - Google Patents
一种具有共平面电极表面的存储单元装置及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种具有共平面电极表面的存储单元装置及其制造方法。该装置包含多个第一电极,而每一第一电极具有与该位线的该顶表面共平面的顶表面,该第一电极延伸穿过在该位线内对应的过孔。绝缘构件在每一过孔之内,以及其为具有厚度的环形,而该绝缘构件介于该对应的第一电极与作为第二电极的该位线的部位之间。一层存储材料延伸穿过该绝缘构件以接触该位线及该第一电极的该顶表面。
Description
相关申请的交叉引用
本案有关于主张美国临时专利申请案的优先权,其申请号为第60/887,959号,申请日期为2007年2月2日,发明名称为“MEMORYCELL DEVICE WITH COPLANAR ELECTRODE SURFACE ANDMETHOD”。
联合研究合约的当事人
纽约国际商业机械公司、台湾旺宏国际股份有限公司及德国英飞凌技术公司(Infineon Technologies A.G.)为联合研究合约的当事人。
技术领域
本发明涉及使用存储材料的高密度存储装置,例如相变化存储器(PCM)装置,本发明还涉及制造此等装置的方法。通过施加电能,该存储材料可在不同的电性状态之间切换。该存储材料可为相变化存储材料,包括硫属化物与其他材料等。
背景技术
相变化存储材料广泛地用于读写光碟中。这些材料包括有至少两种固态相,包括如一大部分为非晶态的固态相,以及一大体上为结晶态的固态相。激光脉冲用于读写光碟片中,以在二种相中切换,并读取该种材料在相变化之后的光学性质。
如硫属化物及类似材料的此等相变化存储材料,可通过施加其幅度适用于集成电路中的电流,而致使晶相变化。一般而言,非晶态的特征是其电阻高于结晶态,该电阻值可轻易测量得到而用以作为指示。这种特性则引发使用可编程电阻材料以形成非易失性存储器电路等兴趣,该电路可用于随机存取读写。
从非晶态转变至结晶态一般为低电流步骤。从结晶态转变至非晶态(以下称为重置(reset))一般为高电流步骤,其包括短暂的高电流密度脉冲以融化或破坏结晶结构,其后该相变化材料会快速冷却,抑制相变化的过程,使得至少部份相变化结构得以维持在非晶态。理想状态下,致使相变化材料从结晶态转变至非晶态的重置电流幅度应越低越好。欲降低重置所需的重置电流幅度,可通过减少在存储器中的相变化材料元件的尺寸、以及减少电极与该相变化材料的接触面积而达成,因此可针对该相变化材料元件施加较小的绝对电流值而达成较高的电流密度。
该领域发展的一种方法致力于在集成电路结构上形成微小孔洞,并使用微量可编程的电阻材料填充这些微小孔洞。致力于此等微小孔洞的专利包括:在1997年11月11日公告的美国专利第5,687,112号“Multibit Single Cell Memory Element Having Tapered Contact”、发明人为Ovshinky;在1998年8月4日公告的美国专利第5,789,277号“Method of Making Chalogenide[sic] Memory Device”、发明人为Zahorik等;在2000年11月21日公告的美国专利第6,150,253号“Controllable Ovonic Phase-Change Semiconductor Memory Device andMethods of Fabricating the Same”、发明人为Doan等。
在相变化存储器中,通过施加电流而致使相变化材料在非晶态与结晶态之间切换而储存数据。电流会加热该材料并致使在各状态之间转换。从非晶态转变至结晶态一般为低电流步骤。从结晶态转变至非晶态(以下指称为重置(reset))一般为高电流步骤。优选的是将用以导致相变化材料进行转换(从结晶态转换至非晶态)的重置电流幅度最小化。重置所需要的重置电流幅度可以通过将存储单元中的主动相变化材料元件的尺寸减少而降低。相变化存储装置的问题之一在于,重置操作所需要的电流幅度,会随着相变化材料中需要进行相变化的体积大小而改变。因此,使用标准集成电路工艺所制造的单元,将会受到工艺设备的最小特征尺寸所限制。因此,必须研发可提供亚光刻尺寸的技术以制造存储单元,在大尺寸高密度存储装置中,通常缺少均一性与可靠性。
一种用以在相变化单元中控制主动区域尺寸的方式,其是设计非常小的电极以将电流传送至一相变化材料体中。该微小电极结构将在相变化材料的类似蕈状小区域中诱发相变化,亦即接触部位。请参照2002/8/22发证给Wicker的美国专利6,429,064号“Reduced ContactAreas of Sidewall Conductor”、2002/10/8发证给Gilgen的美国专利6,462,353“Method for Fabricating a Small Area of Contact BetweenElectrodes”、2002/12/31发证给Lowrey的美国专利6,501,111号“Three-Dimensional(3D)Programmable Device”、以及2003/7/1发证给Harshfield的美国专利6,563,156号“Memory Elements and Methodsfor Making same”。
因此,需要一种存储单元的制造方法与结构,使存储单元的结构可具有微小的可编程电阻材料主动区域,使用可靠且可重复的工艺技术制造。
发明内容
本发明公开了一种包含具有顶表面及多个过孔的位线的存储装置。该装置包含多个第一电极,而每一第一电极具有与该位线的该顶表面共平面的顶表面,该第一电极延伸穿过在该位线内对应的过孔。绝缘构件在每一过孔之内,以及其为具有厚度的环形,而该绝缘构件介于该对应的第一电极与作为第二电极的该位线的部位之间。一层存储材料延伸穿过该绝缘构件以接触该位线及该第一电极的该顶表面。
一种用来制造存储装置的方法,而该方法包含提供多个存储单元的存取电路,而该存取电路具有导电接点阵列的顶表面。在该存取电路的该顶表面上形成多个第一电极,其中在该多个第一电极的该第一电极连接对应的导电接点。在该第一电极及该存取电路的顶表面上,形成顺形介电材料层。在该介电材料层上形成导电材料层。平坦化该介电材料层及该导电材料层以露出该第一电极的顶表面,而该第一电极的该顶表面与该导电材料层的顶表面共平面,因此在该导电层内形成多个过孔及由该介电材料层形成多个绝缘构件,其中该第一电极延伸穿过该导电材料层内对应的过孔,以及在对应过孔内该绝缘构件为具有厚度的环形,而该绝缘构件介于该对应的第一电极及该导电材料层之间。在该导电材料层的该顶表面、绝缘构件、及该第一电极的该顶表面上形成存储材料层。图案化该导电材料层及该存储材料层以形成包含导电材料及多个存储材料条的多个位线,而每一存储材料条覆盖在对应的位线之上。
本发明公开了一种用来制造存储装置的方法,包含提供多个存储单元的存取电路,而该存取电路具有导电接点阵列的顶表面。形成第一介电材料层在该存取电路的该顶表面。形成导电材料层在该第一介电材料层上。形成多个过孔在该导电材料层及该第一介电材料层内,因此露出该导电接点的顶表面。形成第二介电材料层在该导电材料层上及在该多个过孔之内,该第二介电材料层定义在该过孔内的第一开口。非等向蚀刻该第二介电材料层以形成多个绝缘构件,该绝缘构件在对应的过孔内及定义延伸至对应的导电接点的顶表面的第二开口。形成第一电极在该第二开口之内,而该第一电极具有与该导电材料层的顶表面共平面的个别顶表面。形成存储材料层在该导电材料层的该顶表面、绝缘构件、及该第一电极的该顶表面上;以及图案化该导电材料层及该存储材料层以形成包含导电材料及多个存储材料条的多个位线,而每一存储材料条覆盖在对应的位线之上。
本发明公开了一种在存储元件中可以制造的非常小的主动区域,因此降低了引起相变化所需要电流。该存储元件存储材料的该厚度可以使用在该第一电极及第二电极的顶表面上的存储材料的薄膜沉积技术。更者,该第一电极具有宽度(在一些实施例中是一直径),该宽度优选低于用来形成该存储单元的工艺(通常为光刻工艺)上的最小特征尺寸。该较小的第一电极集中电流密度在该存储材料层的该部位邻近于该第一电极,因此降低该所需电流的大小来引起相变化并使得该主动区域具有“蕈状”外型。此外,绝缘构件提供与该主动区域的热隔绝,如此亦可降低引起相变化时所需要的电流。
通过下面对附图、实施方式及权利要求的说明,可以充分理解本发明的所有特征、目的及优点等。
附图说明
图1示出了具有共平面顶表面的第一电极及第二电极的存储单元的剖面图;
图2至图3是图1所示存储单元的顶视图;
图4至图10示出了本发明所公开的制造存储单元的制造流程图;
图11是示出了集成电路简明方块图,而该集成电路包含具有共平面顶表面的第一电极及第二电极的存储单元的存储阵列;
图12是示出了本发明所公开的具有存储单元的存储阵列的一部位的概要图;以及
图13至图18示出了本发明图4至图7所公开的制造存储单元的替代制造流程图。
具体实施方式
后续的发明说明将参照特定结构实施例与方法。可以理解的是,本发明的保护范围并非限制于特定所公开的实施例,且本发明可利用其他特征、元件、方法与实施例进行实施。对优选实施例进行描述以了解本发明,而非用以限制本发明的保护范围,本发明的保护范围由权利要求限定。本领域技术人员可以根据后续的叙述而了解本发明的均等变化。在各实施例中的类似元件将以类似附图标记表示。
图1示出了具有第一电极110及作为第二电极用的位线120的存储单元剖面图,该第一电极110及该位线120分别具有共平面的顶表面112及122。图2及图3是图1的存储单元100分别沿着附图标记2至附图标记2,及附图标记3至附图标记3的顶视图。
参照图1至图3。介电绝缘构件130位于该位线120中一过孔之内,并且为具有厚度132的环形,该绝缘构件130介于该第一电极110的外表面114及该位线120中一过孔内的内表面134之间。存储材料层140延伸穿过该介电绝缘构件130以接触该第一电极110及该位线120的该顶表面112及122。该存储材料层140包含选自于以下群组中的一个或多个的结合:锗、锑、碲、硒、铟、镓、铋、锡、铜、钯、铅、硫、硅、氧、磷、砷、氮及金。
该第一电极110延伸穿过在该位线中的该过孔至导电栓塞150以耦接该存储材料层140。该第一电极可包含例如氮化钛或氮化钽。氮化钛为优选的,因为其与存储材料层140的GST有良好的接触(如上所述),其为半导体工艺中常用的材料,且在GST转换的高温(典型地介于600至700℃)下可提供良好的扩散障碍。替代地,该第一电极110可为氮化铝钛或氮化铝钽或更包含例如,一个以上选自下列群组中的元素:钛、钨、钼、铝、钽、铜、铂、铱、镧、镍、氧和钌及其组合。
该导电栓塞150延伸穿过层间介电质160至下方的存取电路(未示),该导电栓塞优选地包含顽固金属,例如钨。其他亦可使用的金属包含钛、钼、铝、钽、铜、铂、铱、镧、镍和钌。也可使用其他栓塞结构和材料。
该层间介电质160包含该绝缘构件130包括选自下列群组中的一个以上元素:硅、钛、铝、钽、氮、氧、与碳。而优选地该绝缘构件130具有低导热性,小于0.014J/cm*K*sec。在其他优选实施例中,该绝缘构件130的导热性低于该存储材料层140的非晶态的导热性,或者对于包含有GST的相变化材料而言、低于约0.003J/cm*K*sec。代表性的绝热材料包括由硅、碳、氧、氟、与氢所组成的复合材料。可使用在绝缘构件130的热绝缘材料的范例,包括二氧化硅、SiCOH、聚亚酰胺、聚酰胺、以及氟碳聚合物。
举例来说,该位线120可包含上述所讨论该第一电极110可参考使用的任何材料。
在操作上,在该栓塞150和该位线120的电压可引导电流由该栓塞150流至该位线120或反之亦然,而穿过该第一电极110及该位线120。
该主动区域142是该存储材料层140中存储材料所引起在至少两种固相状态转变的该区域。该主动区域142可在示出的结构中制造的非常地小,因此来降低引起相变化所需电流大小。欲达成该存储材料层140的该厚度144可以在该第一电极110及该位线120的该顶表面112、122之上,使用存储材料的薄膜沉积技术。在一些实施例中,该厚度144小于或等于约100nm,例如约在1nm至100nm之间。更者,该第一电极110具有宽度116(在所示实施例中是一直径),该宽度优选低于用来形成该存储单元100的工艺(通常为光刻工艺)上的最小特征尺寸。该较小的第一电极110集中电流密度在该存储材料层140的该部位邻近于该第一电极110,因此降低该所需电流的大小来引起相变化并使得该主动区域具有如图1所示的“蕈状”外型。该第一电极110的宽度116可低于65nm,例如约在10nm至50nm之间。此外,介电质160包含该绝缘构件130提供与该主动区域142的热隔绝,如此亦可降低引起相变化时所需要的电流大小。
该共平面的顶表面112、122将造成电流路径由该第一电极110横向转向至该第二位线120,因此集中该电流密度在邻接于该第一电极110的该存储材料层140的该部位,并降低在该主动区域142中引起相变化所需电流的大小。
该存储单元100的实施例,包括存储材料层140的相变化存储材料,包括硫属化物材料与其他材料。硫属化物包括下列四元素中的任一种:氧(O)、硫(S)、硒(Se)、以及碲(Te),形成元素周期表上第VIA族的部分。硫属化物包括将硫属元素与更为正电性的元素或自由基结合而得。硫属化合物合金包括将硫属化合物与其他物质如过渡金属等结合。硫属化合物合金通常包括一个以上选自元素周期表第IVA族的元素,例如锗(Ge)以及锡(Sn)。通常,硫属化合物合金包括下列元素中一个以上的复合物:锑(Sb)、镓(Ga)、铟(In)、以及银(Ag)。许多以相变化为基础的存储材料已经被描述在技术文件中,包括下列合金:镓/锑、铟/锑、铟/硒、锑/碲、锗/碲、锗/锑/碲、铟/锑/碲、镓/硒/碲、锡/锑/碲、铟/锑/锗、银/铟/锑/碲、锗/锡/锑/碲、锗/锑/硒/碲、以及碲/锗/锑/硫。在锗/锑/碲合金家族中,可以尝试大范围的合金成分。该成分可以由下列特征式表示:TeaGebSb100-(a+b),其中a与b代表了所组成元素的原子总数为100%时,各原子的百分比。一位研究员描述了最有用的合金为,在沉积材料中所包含的平均碲浓度远低于70%,典型地低于60%,并在一般型态合金中的碲含量范围从最低23%至最高58%,且最优介于48%至58%的碲含量。锗的浓度高于约5%,且其在材料中的平均范围从最低8%至最高30%,一般低于50%。最优地,锗的浓度范围介于8%至40%。在该成分中所剩下的主要成分则为锑。(Ovshinky‘112专利,栏10~11)由另一研究者所评估的特殊合金包括Ge2Sb2Te5、GeSb2Te4、以及GeSb4Te7。(Noboru Yamada,“Potential of Ge-Sb-Te Phase-changeOptical Disks for High-Data-Rate Recording”,SPIE v.3109,pp.28-37(1997))更一般地,过渡金属如铬(Cr)、铁(Fe)、镍(Ni)、铌(Nb)、钯(Pd)、铂(Pt)、以及上述的混合物或合金,可与锗/锑/碲结合以形成相变化合金其包括有可编程的电阻性质。可使用的存储材料的特殊范例,如Ovshinsky‘112专利中栏11-13所述,其范例在此列入参考。
在一些实施例中,硫属化物及其他相变化材料掺杂杂质来修饰导电性、转换温度、熔点及使用在掺杂硫属化物存储元件的其他特性。使用在掺杂硫属化物代表性的杂质包含氮、硅、氧、二氧化硅、氮化硅、铜、银、金、铝、氧化铝、钽、氧化钽、氮化钽、钛、氧化钛。可参见美国专利第6,800,504号专利及美国专利申请号第2005/0029502号专利。
相变化材料可通过施加电脉冲而从一种相态切换至另一相态。先前观察指出,较短、较大幅度的脉冲倾向于将相变化材料的相态改变成大体为非晶态。较长、较低幅度的脉冲倾向于将相变化材料的相态改变成大体为结晶态。在较短、较大幅度脉冲中的能量够大,因此足以破坏结晶结构的键结,同时够短因此可以防止原子再次排列成结晶态。在没有不适当实验的情形下,可以利用实验方法决定特别适用于特定相变化材料及装置结构。
代表的硫属化物材料可整理如下:GexSbyTez,其中x∶y∶z=2∶2∶5。其他成分为x:0~5;y:0~5;z:0~10。以氮、硅、钛或其他元素掺杂的GeSbTe亦可被使用。可以利用PVD溅镀或磁控(Magnetron)溅镀方式,其反应气体为氩气、氮气、及/或氦气、压力为1mTorr至100mTorr。该沉积步骤一般在室温下进行。长宽比为1~5的准直器(collimater)可用以改良其填入表现。为了改善其填入表现,亦可使用数十至数百伏特的直流偏压。另一方面,同时合并使用直流偏压以及准直器亦是可行的。有时需要在真空中或氮气环境中进行沉积后退火处理,以改良硫属化物材料的结晶态。该退火处理的温度典型地介于100℃至400℃,而退火时间则少于30分钟。
图4至图10示出了用来制造本发明所述的存储单元的制造程序。
图4示出了制造流程中形成存储单元结构第一步骤的剖视图,该结构包含第一电极110阵列,其连接在具有顶表面460的存储单元存取层400中的对应栓塞150。可以使用现有技术中所熟知的标准工艺来形成该存储存取层400,并且包含字线440,其以平行的方向延伸于图4所示的横截面。该字线440覆盖基板410并形成该存取晶体管的栅极。该存储存取层400也包含通用源极线450,其连接掺杂区域430作为该存取晶体管的该源极区域之用。在其他实施例中,可借助于在该基板410中一掺杂区域来实施该共同源极线450。该栓塞150连接在该基板410中对应的掺杂区域420来作为该存取晶体管的漏极区域。
该第一电极110具有外表面114及直径116,而其优选小于用来制造该存储存取层400的工艺的最小特征尺寸,而该工艺通常为光刻工艺。
举例来说,使用2007年6月18日申请,以“Method forManufacturing a Phase Change Memory Device with Pillar BottomElectrode”为题的美国专利申请号第11/764,678号专利所公开的方法、材料和工艺,可以形成具有亚光刻直径116的该第一电极110,而该篇专利在此引用为参考文献。举例来说,在该存储存取层400的该顶表面460之上可以形成电极材料层,接着使用标准光刻技术来图案化在该电极层上的光刻胶层,以形成覆盖于该第一电极110位置上的光刻胶幕罩。接着使用例如氧电浆来剪裁该光刻胶幕罩以形成具有亚光刻尺寸且覆盖在该底电极110位置上的幕罩结构。接着,使用该剪裁的光刻胶幕罩来蚀刻该电极材料层,因此形成具有亚光刻尺寸116的该第一电极110。
接着,在图4所示的结构上形成顺形介电材料层500,如图5所示的结构。该顺形介电材料层500可通过介电材料的化学气相沉积CVD来形成,举例来说,该顺形介电材料层500包含在图1至图3中该绝缘构件130所有在上述所讨论中可使用的材料。
接着,在图5所示的结构上形成导电材料层600,如图6所示的结构。举例来说,该导电材料层600包含在图1至图3中该位线120所有在上述所讨论中可使用的材料。
接着平坦化该介电材料层500及该导电材料层600以露出该第一电极110的顶表面112,如图7所示的具有该导电材料层600的顶表面700与该第一电极110的该顶表面112共平面的结构。如在图中可见,在该导电材料层600之内形成具有内表面610的过孔,以及由该介电材料层500形成该绝缘构件130。该第一电极110延伸穿过在该导电材料层600内对应的过孔,以及在该过孔内该绝缘构件130具有厚度132的环形,而该绝缘构件130介于该对应的第一电极110及该导电材料层600之间。
接着,在图7所示的结构上形成存储材料层800,如图8所示的结构。
接着图案化该导电材料层600及该存储材料层800以形成被浅沟槽900及存储材料条920所分隔的位线910,如分别由图9A及图9B所示的剖视图及顶视图的结构。每一存储材料条920覆盖对应的位线910。
借助于形成在该存储材料层800上的保护介电层(未示)、图案化在该保护介电层上的光刻胶层可以形成该位线910及该存储材料条920,使用该图案化的光刻胶作为蚀刻幕罩来蚀刻该保护介电层、该存储材料层800及该导电材料层600,接着移除该光刻胶层。该存储材料条920隔开该第一电极且隔开该主动区域以移除存储材料。这样会使得该存储单元一小块的主动区域不至于被蚀刻工艺所损坏。
接着,利用现有技术所公知的后段工艺来形成图9A及图9B所示的结构,如图10所示的具有介电层1000及导线1010的结构。
如图11所示,示出了本发明所述具有共平面顶表面的第一电极及第二电极的相变化存储单元阵列的集成电路10的简化方块图。字线解码器14电性连接至多个字线16。位线或行解码器18电性连接至多个位线20,以在阵列中的相变化存储单元读取数据,以及读取数据至阵列12中的相变化存储单元。位址经由总线22而提供至字线解码器14与位线解码器18。在方块中的感应放大器与数据输入结构24,经由数据总线26而耦接至位线解码器18。数据来自集成电路10的输入/输出端口、或集成电路内部与外部的其他数据来源,而经由数据输入线28以将数据传输至方块24中的数据输入结构。其他电路30包括在该集成电路10中,例如通用处理器或专用电路、或可提供单芯片***功能的模块组合其由***在单芯片的存储阵列12所支援。数据从方块24中的感应放大器、经由数据输出线32、而传输至集成电路10的输入/输出端口或其他位于集成电路10内部或外部的数据目的地。
在本实施例中所使用的控制器34,使用了偏压调整状态机构,并控制了偏压调整供应电压36的应用,例如读取、编程、抹除、抹除确认与编程确认电压。控制器34可利用特殊目的逻辑电路而应用,如本领域技术人员所知的。在替代实施例中,控制器34包括通用处理器,其可使用于同一集成电路,以执行计算机程序而控制装置的操作。在又一实施例中,控制器34由特殊目的逻辑电路与通用处理器组合而成。
如图12所示,在该型存储单元阵列12中,每个存储单元1530、1532、1534、1536包括了一个存取晶体管(或其他存取装置,例如二极管),其中四个存取晶体管在图上是以附图标记38、40、42、44表示,以及相变化元件,以附图标记46、48、50、52表示。每个存取晶体管38、40、42、44的源极共同连接至源极线54,而其终结于源极线终端55。在另一实施例中,这些选择元件的源极线并未电连接,而是可独立控制的。多个字线包含字线56、58,其沿着第一方向平行地延伸。字线56、58与字线解码器14电性连接。存取晶体管38、42的栅极连接至共同字线,例如字线56,而存取晶体管40、44的栅极共同连接至字线58。多个位线包含位线60、62,其沿着第二方向平行地延伸,并与该相变化元件的一端连接,例如该相变化元件46、48与该位线60连接。特别是相变化元件46连接介于该存取晶体管38的漏极及该位线60之间。类似地,相变化元件50连接介于该存取晶体管42的漏极及该位线62之间,相变化元件52连接介于该存取晶体管44的漏极及该位线62之间。需要注意的是,在图中为了方便起见,仅示出了四个存储单元,在实际中,该阵列12包含数千至数百万的此等存储单元。同时亦可使用其他阵列结构,例如该相变化存储元件连接至存取晶体管的该源极。
图13至图18是示出在图4至图7用来形成该第一电极及该绝缘构件制造流程的替代步骤。
图13示出了形成一结构的该制造流程第一步骤的剖面图,该结构包含形成介电层1300在该存储存取层400的该顶表面460上,以及形成导电材料层1310在该介电层1300上。
接着,穿过该介电层1300及该导电材料层1310形成该过孔1400以露出该存储存取层400的该导电栓塞150。举例来说,可以通过图案化在该导电材料层1310的光刻胶层以及具有覆盖在该过孔1400的该位置上的开口来形成该过孔1400,以及接着使用该图案化的光刻胶层作为蚀刻幕罩来进行蚀刻。
接着在图14所示的该结构上形成顺形介电材料层1500,如图15所示的结构。该介电材料层1500定义在该过孔1400内的开口1500,并可包含,例如所有在上述所讨论中所有图1至图3的该绝缘构件130可使用的材料。
接着,实施非等向蚀刻在图15的该介电材料层1500上以露出该导电材料层1310的该栓塞150,因此形成该绝缘构件130定义开口1600,如图16所示的结构。
接着,在图16所示的该结构上及开口1600内形成导电材料层1700,如图17所示的结构。该导电材料层1700可包含例如所有在上述所讨论中所有图1至图3的该第一电极110可使用的材料。
接着,在图17所示的结构上实施平坦化工艺,例如化学机械研磨法CMP,因此形成第一电极110。
在另一替代实施例中,形成介电层在该存取电路400的该顶表面460上,接着依序形成导电材料层及牺牲层。接着,在该牺牲层之上,形成具有接近或等于用来制造幕罩工艺的该最小特征尺寸的幕罩,该开口覆盖该导电栓塞150。接着,使用该幕罩选择地蚀刻该导电材料层及该牺牲层,因此在该导电材料层及该牺牲层中形成过孔并露出该介电层的顶表面。在移除该幕罩后,在该过孔上实施选择的下切蚀刻(undercutting etch),使得该导电材料层被蚀刻,并留下该牺牲层及该介电层。接着,在该过孔内形成填充材料,而其使用该选择的下切蚀刻工艺产生自动对准空孔,并在每一过孔内形成该填充材料。接着,实施非等向蚀刻工艺在该填充材料上以打开该空孔,因此在每一过孔内形成包含填充材料的侧壁子。该侧壁子具有一开口尺寸,而该开口尺寸实质上由该空孔的尺寸决定,因此可以比光刻工艺的该最小特征尺寸还来的小。接着,使用该侧壁子作为蚀刻幕罩来蚀刻该介电层,因此在该介电层内形成具有直径小于该最小特征尺寸的开口。接着在该介电层及侧壁子的开口内形成第一电极材料层。接着,使用诸如化学机械研磨CMP的平坦化工艺,然后移除该牺牲层及形成该第一电极。在该平坦化工艺后形成存储材料层,接着图案化该导电材料层及该存储材料层以形成位线及覆盖在该位线上的存储材料条。
虽然已经参照优选实施例描述了本发明,但是本领域技术人员应该理解,本发明的创作并未受限于其详细描述内容。替换方式及修改样式已于先前描述中所建议,并且其他替换方式及修改样式将为本领域技术人员所思及。特别是,根据本发明的结构与方法,所有具有实质上相同于本发明的构件结合而达成与本发明实质上相同结果者皆不脱离本发明的精神范畴。因此,所有此等替换方式及修改样式都将落在本发明在所附权利要求及其等价物所界定的保护范围之中。
任何在前文中提及的专利申请案以及印刷文本,均列为本案的参考。
Claims (15)
1.一种存储装置,包含:
具有顶表面及多个过孔的位线;
具有个别的顶表面的多个第一电极,而该个别的顶表面与该位线的该顶表面共平面,而该第一电极延伸穿过在该位线中对应的过孔;
多个绝缘构件,而该些绝缘构件位于对应的过孔内并为具有厚度的环形,而该绝缘构件介于该对应的第一电极与作为第二电极的该位线的部位之间;以及
存储材料层延伸穿过该绝缘构件以接触该位线及该第一电极的该些顶表面。
2.如权利要求1所述的存储装置,更包含:
在该位线下方的多个存储单元的存取电路,该存取电路包含导电接点阵列,其中在该多个第一电极中的该第一电极与在该导电接点阵列中对应的导电接点电性耦接。
3.如权利要求1所述的存储装置,其中每一该第一电极具有小于用来形成该存储装置的光刻工艺的最小特征尺寸的宽度。
4.如权利要求1所述的存储装置,其中该存储材料包含选自于以下群组中的一个或多个的结合:锗、锑、碲、硒、铟、镓、铋、锡、铜、钯、铅、硫、硅、氧、磷、砷、氮及金。
5.如权利要求1所述的存储装置,其中每一该第一电极及该位线包含选自以下群组中的元素:钛、钨、钼、铝、铜、铂、铱、镧、镍、氮、氧和钌及其结合。
6.如权利要求1所述的存储装置,其中每一该第一电极及该位线包含钛及氮。
7.如权利要求1所述的存储装置,其中该存储材料层具有介于约1nm至100nm的厚度。
8.一种用来制造存储装置的方法,而该方法包含:
形成具有顶表面及多个过孔的位线;
形成具有个别的顶表面的多个第一电极,而该个别的顶表面与该位线的该顶表面共平面,而该第一电极延伸穿过在该位线中所对应的过孔;
形成多个绝缘构件,而该绝缘构件位于对应的过孔内,并为具有厚度的环形,而该绝缘构件介于该对应的第一电极与作为第二电极的该位线的部位之间;以及
形成一层存储材料延伸穿过该绝缘构件以接触该位线及该第一电极的该顶表面。
9.如权利要求8所述的方法,更包含:
在该位线下方,形成多个存储单元的存取电路,该存取电路包含导电接点阵列,其中在该多个第一电极的该第一电极与在该导电接点阵列中对应的导电接点电性耦接。
10.如权利要求8所述的方法,其中每一该第一电极具有小于用来形成该存储装置的光刻工艺的最小特征尺寸的宽度。
11.如权利要求8所述的方法,其中该存储材料包含选自于以下群组中的一个或多个的结合:锗、锑、碲、硒、铟、镓、铋、锡、铜、钯、铅、硫、硅、氧、磷、砷、氮及金。
12.如权利要求8所述的方法,其中每一该第一电极及该位线包含选自以下群组中的元素:钛、钨、钼、铝、铜、铂、铱、镧、镍、氮、氧和钌及其结合。
13.如权利要求8所述的方法,其中该存储材料层具有介于约1nm至100nm的厚度。
14.一种用来制造存储装置的方法,而该方法包含:
提供多个存储单元的存取电路,而该存取电路具有导电接点阵列的顶表面;
形成多个第一电极在该存取电路的该顶表面上,其中在该多个第一电极中的该第一电极连接对应的导电接点;
形成顺形介电材料层在该第一电极及该存取电路的顶表面上;
形成导电材料层在该顺形介电材料层上;
平坦化该介电材料层及该导电材料层以露出该第一电极的顶表面,而该第一电极的该顶表面与该导电材料层的顶表面共平面,因此在该导电材料层内形成多个过孔及由该介电材料层形成多个绝缘构件,其中该第一电极延伸穿过该导电材料层内对应的过孔,以及位于对应过孔内的该绝缘构件为具有厚度的环形,而该绝缘构件介于该对应的第一电极及该导电材料层之间;以及
形成存储材料层在该导电材料层的该顶表面、绝缘构件、及该第一电极的该顶表面上;以及
图案化该导电材料层及该存储材料层以形成包含导电材料及多个存储材料条的多个位线,而每一存储材料条覆盖在对应的位线之上。
15.一种用来制造存储装置的方法,而该方法包含:
提供多个存储单元的存取电路,而该存取电路具有导电接点阵列的顶表面;
形成第一介电材料层在该存取电路的该顶表面;
形成导电材料层在该第一介电材料层上;
形成多个过孔在该导电材料层及该第一介电材料层内,因此露出该导电接点的顶表面;
形成第二介电材料层在该导电材料层上及在该多个过孔之内,该第二介电材料层定义在该过孔内的第一开口;
非等向蚀刻该第二介电材料层以形成多个绝缘构件,该绝缘构件在对应的过孔内及定义延伸至对应的导电接点的顶表面的第二开口;
形成第一电极在该第二开口之内,而该第一电极具有与该导电材料层的顶表面共平面的个别顶表面;
形成存储材料层在该导电材料层的该顶表面、绝缘构件、及该第一电极的该顶表面上;以及
图案化该导电材料层及该存储材料层以形成包含导电材料及多个存储材料条的多个位线,而每一存储材料条覆盖在对应的位线之上。
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Publication number | Priority date | Publication date | Assignee | Title |
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US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
KR100749740B1 (ko) * | 2006-08-01 | 2007-08-17 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8105884B2 (en) * | 2008-10-06 | 2012-01-31 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
US8586962B2 (en) | 2008-10-06 | 2013-11-19 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
KR101012435B1 (ko) * | 2008-11-10 | 2011-02-08 | 주식회사 하이닉스반도체 | 상변화 기억 소자 및 그의 제조방법 |
US8097871B2 (en) | 2009-04-30 | 2012-01-17 | Macronix International Co., Ltd. | Low operational current phase change memory structures |
US8110822B2 (en) | 2009-07-15 | 2012-02-07 | Macronix International Co., Ltd. | Thermal protect PCRAM structure and methods for making |
TWI389260B (zh) * | 2009-09-30 | 2013-03-11 | Inotera Memories Inc | 半導體記憶體之電容下電極的製備方法 |
US8319290B2 (en) * | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
US8728859B2 (en) | 2010-08-12 | 2014-05-20 | International Business Machines Corporation | Small footprint phase change memory cell |
CN108231738A (zh) * | 2017-12-29 | 2018-06-29 | 睿力集成电路有限公司 | 半导体器件结构及其制造方法 |
CN110635031B (zh) * | 2019-09-24 | 2021-04-30 | 华中科技大学 | 用于纳米级相变存储器单元的水平电极配置结构 |
CN110783455B (zh) * | 2019-09-24 | 2021-06-18 | 华中科技大学 | 纳米级相变存储器单元水平电极配置结构的制造使用方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501111B1 (en) * | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
Family Cites Families (247)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3271591A (en) | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3530441A (en) | 1969-01-15 | 1970-09-22 | Energy Conversion Devices Inc | Method and apparatus for storing and retrieving information |
IL61678A (en) | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
US4452592A (en) | 1982-06-01 | 1984-06-05 | General Motors Corporation | Cyclic phase change coupling |
JPS60137070A (ja) | 1983-12-26 | 1985-07-20 | Toshiba Corp | 半導体装置の製造方法 |
US4719594A (en) * | 1984-11-01 | 1988-01-12 | Energy Conversion Devices, Inc. | Grooved optical data storage device including a chalcogenide memory layer |
US4876220A (en) | 1986-05-16 | 1989-10-24 | Actel Corporation | Method of making programmable low impedance interconnect diode element |
JP2685770B2 (ja) | 1987-12-28 | 1997-12-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2606857B2 (ja) * | 1987-12-10 | 1997-05-07 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5534712A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
JP2825031B2 (ja) | 1991-08-06 | 1998-11-18 | 日本電気株式会社 | 半導体メモリ装置 |
US5166096A (en) | 1991-10-29 | 1992-11-24 | International Business Machines Corporation | Process for fabricating self-aligned contact studs for semiconductor structures |
JPH05206394A (ja) | 1992-01-24 | 1993-08-13 | Mitsubishi Electric Corp | 電界効果トランジスタおよびその製造方法 |
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5958358A (en) | 1992-07-08 | 1999-09-28 | Yeda Research And Development Co., Ltd. | Oriented polycrystalline thin films of transition metal chalcogenides |
JP2884962B2 (ja) * | 1992-10-30 | 1999-04-19 | 日本電気株式会社 | 半導体メモリ |
US5515488A (en) * | 1994-08-30 | 1996-05-07 | Xerox Corporation | Method and apparatus for concurrent graphical visualization of a database search and its search history |
US5785828A (en) | 1994-12-13 | 1998-07-28 | Ricoh Company, Ltd. | Sputtering target for producing optical recording medium |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5831276A (en) | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US5789758A (en) | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5837564A (en) | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
US5687112A (en) | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US6025220A (en) * | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
US5866928A (en) * | 1996-07-16 | 1999-02-02 | Micron Technology, Inc. | Single digit line with cell contact interconnect |
US5789277A (en) | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US5985698A (en) | 1996-07-22 | 1999-11-16 | Micron Technology, Inc. | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell |
US5814527A (en) | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5998244A (en) | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US5688713A (en) | 1996-08-26 | 1997-11-18 | Vanguard International Semiconductor Corporation | Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers |
US6147395A (en) | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
US6087674A (en) | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
US5716883A (en) * | 1996-11-06 | 1998-02-10 | Vanguard International Semiconductor Corporation | Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns |
US6015977A (en) | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US5952671A (en) * | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US5933365A (en) | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
US5902704A (en) * | 1997-07-02 | 1999-05-11 | Lsi Logic Corporation | Process for forming photoresist mask over integrated circuit structures with critical dimension control |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6617192B1 (en) | 1997-10-01 | 2003-09-09 | Ovonyx, Inc. | Electrically programmable memory element with multi-regioned contact |
US7023009B2 (en) * | 1997-10-01 | 2006-04-04 | Ovonyx, Inc. | Electrically programmable memory element with improved contacts |
US6969866B1 (en) | 1997-10-01 | 2005-11-29 | Ovonyx, Inc. | Electrically programmable memory element with improved contacts |
US6087269A (en) | 1998-04-20 | 2000-07-11 | Advanced Micro Devices, Inc. | Method of making an interconnect using a tungsten hard mask |
US6372651B1 (en) * | 1998-07-17 | 2002-04-16 | Advanced Micro Devices, Inc. | Method for trimming a photoresist pattern line for memory gate etching |
US6141260A (en) * | 1998-08-27 | 2000-10-31 | Micron Technology, Inc. | Single electron resistor memory device and method for use thereof |
US7157314B2 (en) | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6351406B1 (en) * | 1998-11-16 | 2002-02-26 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
JP2000164830A (ja) * | 1998-11-27 | 2000-06-16 | Mitsubishi Electric Corp | 半導体記憶装置の製造方法 |
US6291137B1 (en) | 1999-01-20 | 2001-09-18 | Advanced Micro Devices, Inc. | Sidewall formation for sidewall patterning of sub 100 nm structures |
US6245669B1 (en) | 1999-02-05 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High selectivity Si-rich SiON etch-stop layer |
US6750079B2 (en) | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
US6943365B2 (en) | 1999-03-25 | 2005-09-13 | Ovonyx, Inc. | Electrically programmable memory element with reduced area of contact and method for making same |
US6177317B1 (en) * | 1999-04-14 | 2001-01-23 | Macronix International Co., Ltd. | Method of making nonvolatile memory devices having reduced resistance diffusion regions |
JP2001093374A (ja) * | 1999-09-27 | 2001-04-06 | Sony Corp | スイッチおよびスイッチを有する電子機器 |
US6077674A (en) | 1999-10-27 | 2000-06-20 | Agilent Technologies Inc. | Method of producing oligonucleotide arrays with features of high purity |
US6326307B1 (en) | 1999-11-15 | 2001-12-04 | Appllied Materials, Inc. | Plasma pretreatment of photoresist in an oxide etch process |
US6314014B1 (en) | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6576546B2 (en) | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
TW586154B (en) * | 2001-01-05 | 2004-05-01 | Macronix Int Co Ltd | Planarization method for semiconductor device |
US6927411B2 (en) * | 2000-02-11 | 2005-08-09 | Axon Technologies Corporation | Programmable structure, an array including the structure, and methods of forming the same |
US6420216B1 (en) | 2000-03-14 | 2002-07-16 | International Business Machines Corporation | Fuse processing using dielectric planarization pillars |
US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
US6420215B1 (en) | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
US6555860B2 (en) * | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
US6429064B1 (en) | 2000-09-29 | 2002-08-06 | Intel Corporation | Reduced contact area of sidewall conductor |
US6567293B1 (en) * | 2000-09-29 | 2003-05-20 | Ovonyx, Inc. | Single level metal memory cell using chalcogenide cladding |
KR100382729B1 (ko) | 2000-12-09 | 2003-05-09 | 삼성전자주식회사 | 반도체 소자의 금속 컨택 구조체 및 그 형성방법 |
US6569705B2 (en) | 2000-12-21 | 2003-05-27 | Intel Corporation | Metal structure for a phase-change memory device |
US6271090B1 (en) | 2000-12-22 | 2001-08-07 | Macronix International Co., Ltd. | Method for manufacturing flash memory device with dual floating gates and two bits per cell |
TW490675B (en) | 2000-12-22 | 2002-06-11 | Macronix Int Co Ltd | Control method of multi-stated NROM |
US6627530B2 (en) | 2000-12-22 | 2003-09-30 | Matrix Semiconductor, Inc. | Patterning three dimensional structures |
US6534781B2 (en) * | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
WO2002061840A1 (fr) | 2001-01-30 | 2002-08-08 | Hitachi, Ltd. | Dispositif de circuit integre semi-conducteur et procede de production de ce dernier |
KR100400037B1 (ko) | 2001-02-22 | 2003-09-29 | 삼성전자주식회사 | 콘택 플러그를 구비하는 반도체 소자 및 그의 제조 방법 |
US6487114B2 (en) | 2001-02-28 | 2002-11-26 | Macronix International Co., Ltd. | Method of reading two-bit memories of NROM cell |
US6596589B2 (en) | 2001-04-30 | 2003-07-22 | Vanguard International Semiconductor Corporation | Method of manufacturing a high coupling ratio stacked gate flash memory with an HSG-SI layer |
US6730928B2 (en) | 2001-05-09 | 2004-05-04 | Science Applications International Corporation | Phase change switches and circuits coupling to electromagnetic waves containing phase change switches |
US6514788B2 (en) * | 2001-05-29 | 2003-02-04 | Bae Systems Information And Electronic Systems Integration Inc. | Method for manufacturing contacts for a Chalcogenide memory device |
US6589714B2 (en) | 2001-06-26 | 2003-07-08 | Ovonyx, Inc. | Method for making programmable resistance memory element using silylated photoresist |
US6774387B2 (en) | 2001-06-26 | 2004-08-10 | Ovonyx, Inc. | Programmable resistance memory element |
US6613604B2 (en) | 2001-08-02 | 2003-09-02 | Ovonyx, Inc. | Method for making small pore for use in programmable resistance memory element |
US6511867B2 (en) * | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
US6673700B2 (en) * | 2001-06-30 | 2004-01-06 | Ovonyx, Inc. | Reduced area intersection between electrode and programming element |
US6605527B2 (en) | 2001-06-30 | 2003-08-12 | Intel Corporation | Reduced area intersection between electrode and programming element |
US6643165B2 (en) * | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6737312B2 (en) * | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6507061B1 (en) * | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
US6586761B2 (en) | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
US6861267B2 (en) * | 2001-09-17 | 2005-03-01 | Intel Corporation | Reducing shunts in memories with phase-change material |
US6566700B2 (en) * | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
US6800563B2 (en) | 2001-10-11 | 2004-10-05 | Ovonyx, Inc. | Forming tapered lower electrode phase-change memories |
US6791859B2 (en) * | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6545903B1 (en) * | 2001-12-17 | 2003-04-08 | Texas Instruments Incorporated | Self-aligned resistive plugs for forming memory cell with phase change material |
US6512241B1 (en) * | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
US6867638B2 (en) * | 2002-01-10 | 2005-03-15 | Silicon Storage Technology, Inc. | High voltage generation and regulation system for digital multilevel nonvolatile memory |
JP3948292B2 (ja) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
US6972430B2 (en) | 2002-02-20 | 2005-12-06 | Stmicroelectronics S.R.L. | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
US7122281B2 (en) | 2002-02-26 | 2006-10-17 | Synopsys, Inc. | Critical dimension control using full phase and trim masks |
JP3796457B2 (ja) | 2002-02-28 | 2006-07-12 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US6579760B1 (en) | 2002-03-28 | 2003-06-17 | Macronix International Co., Ltd. | Self-aligned, programmable phase change memory |
AU2003221003A1 (en) * | 2002-04-09 | 2003-10-20 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory and manufacturing method thereof |
US6864500B2 (en) * | 2002-04-10 | 2005-03-08 | Micron Technology, Inc. | Programmable conductor memory cell structure |
US6605821B1 (en) | 2002-05-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Phase change material electronic memory structure and method for forming |
US6864503B2 (en) * | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US6850432B2 (en) * | 2002-08-20 | 2005-02-01 | Macronix International Co., Ltd. | Laser programmable electrically readable phase-change memory method and device |
JP4190238B2 (ja) * | 2002-09-13 | 2008-12-03 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US6992932B2 (en) * | 2002-10-29 | 2006-01-31 | Saifun Semiconductors Ltd | Method circuit and system for read error detection in a non-volatile memory array |
JP4928045B2 (ja) * | 2002-10-31 | 2012-05-09 | 大日本印刷株式会社 | 相変化型メモリ素子およびその製造方法 |
US6791102B2 (en) | 2002-12-13 | 2004-09-14 | Intel Corporation | Phase change memory |
US6744088B1 (en) | 2002-12-13 | 2004-06-01 | Intel Corporation | Phase change memory device on a planar composite layer |
US6815266B2 (en) | 2002-12-30 | 2004-11-09 | Bae Systems Information And Electronic Systems Integration, Inc. | Method for manufacturing sidewall contacts for a chalcogenide memory device |
EP1439583B1 (en) | 2003-01-15 | 2013-04-10 | STMicroelectronics Srl | Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
CN100505086C (zh) | 2003-01-31 | 2009-06-24 | Nxp股份有限公司 | 用于低功耗和高选择性的mram结构 |
US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
KR100486306B1 (ko) * | 2003-02-24 | 2005-04-29 | 삼성전자주식회사 | 셀프 히터 구조를 가지는 상변화 메모리 소자 |
US6936544B2 (en) | 2003-03-11 | 2005-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of removing metal etching residues following a metal etchback process to improve a CMP process |
JP4634014B2 (ja) * | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | 半導体記憶装置 |
KR100979710B1 (ko) * | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
US20060006472A1 (en) * | 2003-06-03 | 2006-01-12 | Hai Jiang | Phase change memory with extra-small resistors |
US7067865B2 (en) | 2003-06-06 | 2006-06-27 | Macronix International Co., Ltd. | High density chalcogenide memory cells |
US6838692B1 (en) * | 2003-06-23 | 2005-01-04 | Macronix International Co., Ltd. | Chalcogenide memory device with multiple bits per cell |
US20050018526A1 (en) * | 2003-07-21 | 2005-01-27 | Heon Lee | Phase-change memory device and manufacturing method thereof |
US7132350B2 (en) * | 2003-07-21 | 2006-11-07 | Macronix International Co., Ltd. | Method for manufacturing a programmable eraseless memory |
KR100615586B1 (ko) * | 2003-07-23 | 2006-08-25 | 삼성전자주식회사 | 다공성 유전막 내에 국부적인 상전이 영역을 구비하는상전이 메모리 소자 및 그 제조 방법 |
US7893419B2 (en) * | 2003-08-04 | 2011-02-22 | Intel Corporation | Processing phase change material to improve programming speed |
US6927410B2 (en) | 2003-09-04 | 2005-08-09 | Silicon Storage Technology, Inc. | Memory device with discrete layers of phase change memory material |
US6815704B1 (en) | 2003-09-04 | 2004-11-09 | Silicon Storage Technology, Inc. | Phase change memory device employing thermally insulating voids |
US20050062087A1 (en) * | 2003-09-19 | 2005-03-24 | Yi-Chou Chen | Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same |
DE10345455A1 (de) | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Verfahren zum Erzeugen einer Hartmaske und Hartmasken-Anordnung |
US6910907B2 (en) | 2003-11-18 | 2005-06-28 | Agere Systems Inc. | Contact for use in an integrated circuit and a method of manufacture therefor |
US7485891B2 (en) | 2003-11-20 | 2009-02-03 | International Business Machines Corporation | Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory |
KR100558548B1 (ko) | 2003-11-27 | 2006-03-10 | 삼성전자주식회사 | 상변화 메모리 소자에서의 라이트 드라이버 회로 및라이트 전류 인가방법 |
US6937507B2 (en) | 2003-12-05 | 2005-08-30 | Silicon Storage Technology, Inc. | Memory device and method of operating same |
US7265050B2 (en) | 2003-12-12 | 2007-09-04 | Samsung Electronics Co., Ltd. | Methods for fabricating memory devices using sacrificial layers |
US7291556B2 (en) | 2003-12-12 | 2007-11-06 | Samsung Electronics Co., Ltd. | Method for forming small features in microelectronic devices using sacrificial layers |
KR100569549B1 (ko) * | 2003-12-13 | 2006-04-10 | 주식회사 하이닉스반도체 | 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치 |
US7038230B2 (en) * | 2004-01-06 | 2006-05-02 | Macronix Internation Co., Ltd. | Horizontal chalcogenide element defined by a pad for use in solid-state memories |
JP4124743B2 (ja) | 2004-01-21 | 2008-07-23 | 株式会社ルネサステクノロジ | 相変化メモリ |
KR100564608B1 (ko) * | 2004-01-29 | 2006-03-28 | 삼성전자주식회사 | 상변화 메모리 소자 |
US6936840B2 (en) | 2004-01-30 | 2005-08-30 | International Business Machines Corporation | Phase-change memory cell and method of fabricating the phase-change memory cell |
US7858980B2 (en) | 2004-03-01 | 2010-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reduced active area in a phase change memory structure |
JP4529493B2 (ja) | 2004-03-12 | 2010-08-25 | 株式会社日立製作所 | 半導体装置 |
KR100598100B1 (ko) | 2004-03-19 | 2006-07-07 | 삼성전자주식회사 | 상변환 기억 소자의 제조방법 |
DE102004014487A1 (de) | 2004-03-24 | 2005-11-17 | Infineon Technologies Ag | Speicherbauelement mit in isolierendes Material eingebettetem, aktiven Material |
US6977181B1 (en) | 2004-06-17 | 2005-12-20 | Infincon Technologies Ag | MTJ stack with crystallization inhibiting layer |
JP2006019455A (ja) * | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US7359231B2 (en) * | 2004-06-30 | 2008-04-15 | Intel Corporation | Providing current for phase change memories |
KR100657897B1 (ko) * | 2004-08-21 | 2006-12-14 | 삼성전자주식회사 | 전압 제어층을 포함하는 메모리 소자 |
US7365385B2 (en) * | 2004-08-30 | 2008-04-29 | Micron Technology, Inc. | DRAM layout with vertical FETs and method of formation |
KR100610014B1 (ko) | 2004-09-06 | 2006-08-09 | 삼성전자주식회사 | 리키지 전류 보상 가능한 반도체 메모리 장치 |
US7443062B2 (en) * | 2004-09-30 | 2008-10-28 | Reliance Electric Technologies Llc | Motor rotor cooling with rotation heat pipes |
KR100626388B1 (ko) * | 2004-10-19 | 2006-09-20 | 삼성전자주식회사 | 상변환 메모리 소자 및 그 형성 방법 |
DE102004052611A1 (de) * | 2004-10-29 | 2006-05-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer mit einem Füllmaterial mindestens teilweise gefüllten Öffnung, Verfahren zur Herstellung einer Speicherzelle und Speicherzelle |
US7364935B2 (en) | 2004-10-29 | 2008-04-29 | Macronix International Co., Ltd. | Common word line edge contact phase-change memory |
US7608503B2 (en) * | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
US7202493B2 (en) * | 2004-11-30 | 2007-04-10 | Macronix International Co., Inc. | Chalcogenide memory having a small active region |
US7355230B2 (en) * | 2004-11-30 | 2008-04-08 | Infineon Technologies Ag | Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array |
KR100827653B1 (ko) | 2004-12-06 | 2008-05-07 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
US7220983B2 (en) | 2004-12-09 | 2007-05-22 | Macronix International Co., Ltd. | Self-aligned small contact phase-change memory method and device |
TWI260764B (en) | 2004-12-10 | 2006-08-21 | Macronix Int Co Ltd | Non-volatile memory cell and operating method thereof |
US20060131555A1 (en) | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Resistance variable devices with controllable channels |
US20060138467A1 (en) | 2004-12-29 | 2006-06-29 | Hsiang-Lan Lung | Method of forming a small contact in phase-change memory and a memory cell produced by the method |
JP4646634B2 (ja) * | 2005-01-05 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7419771B2 (en) | 2005-01-11 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a finely patterned resist |
US7214958B2 (en) | 2005-02-10 | 2007-05-08 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
US7154774B2 (en) | 2005-03-30 | 2006-12-26 | Ovonyx, Inc. | Detecting switching of access elements of phase change memory cells |
US7488967B2 (en) | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
US7166533B2 (en) * | 2005-04-08 | 2007-01-23 | Infineon Technologies, Ag | Phase change memory cell defined by a pattern shrink material process |
EP1710807B1 (en) * | 2005-04-08 | 2008-11-26 | STMicroelectronics S.r.l. | Phase change memory cell with tubular heater and manufacturing method thereof |
KR100668846B1 (ko) * | 2005-06-10 | 2007-01-16 | 주식회사 하이닉스반도체 | 상변환 기억 소자의 제조방법 |
US7598512B2 (en) | 2005-06-17 | 2009-10-06 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
US7514288B2 (en) | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Manufacturing methods for thin film fuse phase change ram |
US7238994B2 (en) | 2005-06-17 | 2007-07-03 | Macronix International Co., Ltd. | Thin film plate phase change ram circuit and manufacturing method |
US7534647B2 (en) | 2005-06-17 | 2009-05-19 | Macronix International Co., Ltd. | Damascene phase change RAM and manufacturing method |
US8237140B2 (en) | 2005-06-17 | 2012-08-07 | Macronix International Co., Ltd. | Self-aligned, embedded phase change RAM |
US7696503B2 (en) | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
US7514367B2 (en) | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Method for manufacturing a narrow structure on an integrated circuit |
US7321130B2 (en) * | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
US20060289848A1 (en) | 2005-06-28 | 2006-12-28 | Dennison Charles H | Reducing oxidation of phase change memory electrodes |
US7309630B2 (en) | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
US7345907B2 (en) * | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
US20070037101A1 (en) * | 2005-08-15 | 2007-02-15 | Fujitsu Limited | Manufacture method for micro structure |
US20070045606A1 (en) | 2005-08-30 | 2007-03-01 | Michele Magistretti | Shaping a phase change layer in a phase change memory cell |
US7417245B2 (en) * | 2005-11-02 | 2008-08-26 | Infineon Technologies Ag | Phase change memory having multilayer thermal insulation |
US7397060B2 (en) * | 2005-11-14 | 2008-07-08 | Macronix International Co., Ltd. | Pipe shaped phase change memory |
US20070111429A1 (en) | 2005-11-14 | 2007-05-17 | Macronix International Co., Ltd. | Method of manufacturing a pipe shaped phase change memory |
US7394088B2 (en) | 2005-11-15 | 2008-07-01 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
US7450411B2 (en) | 2005-11-15 | 2008-11-11 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
US7786460B2 (en) * | 2005-11-15 | 2010-08-31 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
US7635855B2 (en) * | 2005-11-15 | 2009-12-22 | Macronix International Co., Ltd. | I-shaped phase change memory cell |
US7414258B2 (en) * | 2005-11-16 | 2008-08-19 | Macronix International Co., Ltd. | Spacer electrode small pin phase change memory RAM and manufacturing method |
US7507986B2 (en) | 2005-11-21 | 2009-03-24 | Macronix International Co., Ltd. | Thermal isolation for an active-sidewall phase change memory cell |
US7829876B2 (en) | 2005-11-21 | 2010-11-09 | Macronix International Co., Ltd. | Vacuum cell thermal isolation for a phase change memory device |
US7479649B2 (en) | 2005-11-21 | 2009-01-20 | Macronix International Co., Ltd. | Vacuum jacketed electrode for phase change memory element |
US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
US7599217B2 (en) | 2005-11-22 | 2009-10-06 | Macronix International Co., Ltd. | Memory cell device and manufacturing method |
US7459717B2 (en) | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
US7605079B2 (en) | 2005-12-05 | 2009-10-20 | Macronix International Co., Ltd. | Manufacturing method for phase change RAM with electrode layer process |
US7642539B2 (en) | 2005-12-13 | 2010-01-05 | Macronix International Co., Ltd. | Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
CN101461071B (zh) * | 2005-12-20 | 2012-01-18 | Nxp股份有限公司 | 纵向相变存储器单元及其制造方法 |
US7531825B2 (en) | 2005-12-27 | 2009-05-12 | Macronix International Co., Ltd. | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
US8062833B2 (en) | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
US7292466B2 (en) | 2006-01-03 | 2007-11-06 | Infineon Technologies Ag | Integrated circuit having a resistive memory |
US7741636B2 (en) | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7595218B2 (en) | 2006-01-09 | 2009-09-29 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7560337B2 (en) | 2006-01-09 | 2009-07-14 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US20070158632A1 (en) | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
US7825396B2 (en) | 2006-01-11 | 2010-11-02 | Macronix International Co., Ltd. | Self-align planerized bottom electrode phase change memory and manufacturing method |
US7351648B2 (en) * | 2006-01-19 | 2008-04-01 | International Business Machines Corporation | Methods for forming uniform lithographic features |
US7432206B2 (en) | 2006-01-24 | 2008-10-07 | Macronix International Co., Ltd. | Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram |
US7456421B2 (en) | 2006-01-30 | 2008-11-25 | Macronix International Co., Ltd. | Vertical side wall active pin structures in a phase change memory and manufacturing methods |
US7956358B2 (en) * | 2006-02-07 | 2011-06-07 | Macronix International Co., Ltd. | I-shaped phase change memory cell with thermal isolation |
US7426134B2 (en) | 2006-02-24 | 2008-09-16 | Infineon Technologies North America | Sense circuit for resistive memory |
US7910907B2 (en) | 2006-03-15 | 2011-03-22 | Macronix International Co., Ltd. | Manufacturing method for pipe-shaped electrode phase change memory |
US20070252127A1 (en) * | 2006-03-30 | 2007-11-01 | Arnold John C | Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereof |
US20070235811A1 (en) | 2006-04-07 | 2007-10-11 | International Business Machines Corporation | Simultaneous conditioning of a plurality of memory cells through series resistors |
US7928421B2 (en) | 2006-04-21 | 2011-04-19 | Macronix International Co., Ltd. | Phase change memory cell with vacuum spacer |
US20070249090A1 (en) | 2006-04-24 | 2007-10-25 | Philipp Jan B | Phase-change memory cell adapted to prevent over-etching or under-etching |
US8129706B2 (en) | 2006-05-05 | 2012-03-06 | Macronix International Co., Ltd. | Structures and methods of a bistable resistive random access memory |
US7608848B2 (en) | 2006-05-09 | 2009-10-27 | Macronix International Co., Ltd. | Bridge resistance random access memory device with a singular contact structure |
US7423300B2 (en) | 2006-05-24 | 2008-09-09 | Macronix International Co., Ltd. | Single-mask phase change memory element |
US7696506B2 (en) | 2006-06-27 | 2010-04-13 | Macronix International Co., Ltd. | Memory cell with memory material insulation and manufacturing method |
US7663909B2 (en) * | 2006-07-10 | 2010-02-16 | Qimonda North America Corp. | Integrated circuit having a phase change memory cell including a narrow active region width |
US7785920B2 (en) * | 2006-07-12 | 2010-08-31 | Macronix International Co., Ltd. | Method for making a pillar-type phase change memory element |
US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
US7684225B2 (en) * | 2006-10-13 | 2010-03-23 | Ovonyx, Inc. | Sequential and video access for non-volatile memory arrays |
US20080225489A1 (en) | 2006-10-23 | 2008-09-18 | Teledyne Licensing, Llc | Heat spreader with high heat flux and high thermal conductivity |
US20080101110A1 (en) | 2006-10-25 | 2008-05-01 | Thomas Happ | Combined read/write circuit for memory |
US20080137400A1 (en) | 2006-12-06 | 2008-06-12 | Macronix International Co., Ltd. | Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same |
US20080165569A1 (en) | 2007-01-04 | 2008-07-10 | Chieh-Fang Chen | Resistance Limited Phase Change Memory Material |
US7515461B2 (en) | 2007-01-05 | 2009-04-07 | Macronix International Co., Ltd. | Current compliant sensing architecture for multilevel phase change memory |
US20080164453A1 (en) | 2007-01-07 | 2008-07-10 | Breitwisch Matthew J | Uniform critical dimension size pore for pcram application |
US7440315B2 (en) | 2007-01-09 | 2008-10-21 | Macronix International Co., Ltd. | Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell |
US7456460B2 (en) | 2007-01-29 | 2008-11-25 | International Business Machines Corporation | Phase change memory element and method of making the same |
US7535756B2 (en) | 2007-01-31 | 2009-05-19 | Macronix International Co., Ltd. | Method to tighten set distribution for PCRAM |
US7701759B2 (en) | 2007-02-05 | 2010-04-20 | Macronix International Co., Ltd. | Memory cell device and programming methods |
US7463512B2 (en) | 2007-02-08 | 2008-12-09 | Macronix International Co., Ltd. | Memory element with reduced-current phase change element |
US8138028B2 (en) | 2007-02-12 | 2012-03-20 | Macronix International Co., Ltd | Method for manufacturing a phase change memory device with pillar bottom electrode |
-
2008
- 2008-01-31 US US12/023,978 patent/US7619311B2/en active Active
- 2008-02-01 TW TW097104018A patent/TWI376799B/zh active
- 2008-02-02 CN CN2008100094380A patent/CN101236985B/zh not_active Expired - Fee Related
-
2009
- 2009-10-09 US US12/576,819 patent/US7972895B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501111B1 (en) * | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
Non-Patent Citations (2)
Title |
---|
JP平10-335599A 1998.12.18 |
JP平11-233740A 1999.08.27 |
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US20100029042A1 (en) | 2010-02-04 |
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US7619311B2 (en) | 2009-11-17 |
US7972895B2 (en) | 2011-07-05 |
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