CN101236967A - 一种反相器内嵌的可控硅 - Google Patents
一种反相器内嵌的可控硅 Download PDFInfo
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- CN101236967A CN101236967A CNA2008100600880A CN200810060088A CN101236967A CN 101236967 A CN101236967 A CN 101236967A CN A2008100600880 A CNA2008100600880 A CN A2008100600880A CN 200810060088 A CN200810060088 A CN 200810060088A CN 101236967 A CN101236967 A CN 101236967A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000002347 injection Methods 0.000 claims abstract description 118
- 239000007924 injection Substances 0.000 claims abstract description 118
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2008100600880A CN101236967B (zh) | 2008-03-05 | 2008-03-05 | 一种反相器内嵌的可控硅 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2008100600880A CN101236967B (zh) | 2008-03-05 | 2008-03-05 | 一种反相器内嵌的可控硅 |
Publications (2)
Publication Number | Publication Date |
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CN101236967A true CN101236967A (zh) | 2008-08-06 |
CN101236967B CN101236967B (zh) | 2012-04-11 |
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CN2008100600880A Expired - Fee Related CN101236967B (zh) | 2008-03-05 | 2008-03-05 | 一种反相器内嵌的可控硅 |
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CN (1) | CN101236967B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101814498A (zh) * | 2010-03-10 | 2010-08-25 | 浙江大学 | 一种内嵌nmos辅助触发可控硅结构 |
CN107275324A (zh) * | 2016-04-08 | 2017-10-20 | 旺宏电子股份有限公司 | 静电放电保护装置及方法 |
CN107833884A (zh) * | 2017-11-02 | 2018-03-23 | 杰华特微电子(杭州)有限公司 | 用于静电保护的可控硅电路及其器件结构 |
CN108269800A (zh) * | 2016-12-30 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 用于高压器件的静电保护单元及其制作方法、电子装置 |
CN113629052A (zh) * | 2021-10-12 | 2021-11-09 | 微龛(广州)半导体有限公司 | 触发电压可调的esd保护结构及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1167129C (zh) * | 2000-11-16 | 2004-09-15 | 世界先进积体电路股份有限公司 | 静电放电防护元件及相关的电路 |
US6498357B2 (en) * | 2001-02-09 | 2002-12-24 | United Microelectronics Corp. | Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process |
US6573566B2 (en) * | 2001-07-09 | 2003-06-03 | United Microelectronics Corp. | Low-voltage-triggered SOI-SCR device and associated ESD protection circuit |
US6750515B2 (en) * | 2002-02-05 | 2004-06-15 | Industrial Technology Research Institute | SCR devices in silicon-on-insulator CMOS process for on-chip ESD protection |
CN1649142A (zh) * | 2004-01-19 | 2005-08-03 | 财团法人工业技术研究院 | 静电放电防护电路及静电放电防护方法 |
CN100470804C (zh) * | 2007-03-05 | 2009-03-18 | 浙江大学 | 一种利用多晶硅构建esd泄放通道的防护电路 |
-
2008
- 2008-03-05 CN CN2008100600880A patent/CN101236967B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101814498A (zh) * | 2010-03-10 | 2010-08-25 | 浙江大学 | 一种内嵌nmos辅助触发可控硅结构 |
CN107275324A (zh) * | 2016-04-08 | 2017-10-20 | 旺宏电子股份有限公司 | 静电放电保护装置及方法 |
CN108269800A (zh) * | 2016-12-30 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 用于高压器件的静电保护单元及其制作方法、电子装置 |
CN107833884A (zh) * | 2017-11-02 | 2018-03-23 | 杰华特微电子(杭州)有限公司 | 用于静电保护的可控硅电路及其器件结构 |
CN107833884B (zh) * | 2017-11-02 | 2023-06-23 | 杰华特微电子股份有限公司 | 用于静电保护的可控硅电路及其器件结构 |
CN113629052A (zh) * | 2021-10-12 | 2021-11-09 | 微龛(广州)半导体有限公司 | 触发电压可调的esd保护结构及其制备方法 |
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Publication number | Publication date |
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CN101236967B (zh) | 2012-04-11 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Ding Koubao Inventor after: Huang Dahai Inventor after: Cui Qiang Inventor after: Huo Mingxu Inventor after: Du Xiaoyang Inventor after: Dong Shurong Inventor after: Han Yan Inventor before: Huang Dahai Inventor before: Cui Qiang Inventor before: Huo Mingxu Inventor before: Du Xiaoyang Inventor before: Ding Koubao Inventor before: Dong Shurong Inventor before: Han Yan |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: HUANG DAHAI CUI QIANG HUO MINGXU DU XIAOYANG DING KOUBAO DONG SHURONG HAN YAN TO: DING KOUBAO HUANG DAHAI CUI QIANG HUO MINGXU DU XIAOYANG DONG SHURONG HAN YAN |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20140305 |