CN101232056A - Semiconductor optoelectronic angle transducer with three-layer structure - Google Patents
Semiconductor optoelectronic angle transducer with three-layer structure Download PDFInfo
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- CN101232056A CN101232056A CNA2007100010906A CN200710001090A CN101232056A CN 101232056 A CN101232056 A CN 101232056A CN A2007100010906 A CNA2007100010906 A CN A2007100010906A CN 200710001090 A CN200710001090 A CN 200710001090A CN 101232056 A CN101232056 A CN 101232056A
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- angle transducer
- optoelectronic angle
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Abstract
The invention relates to a photoelectrical angle sensor with three-layer semiconductor structure, which belongs to the field of semiconductor technology. According to photovoltaic principle of semiconductor, a required resistor layer is prepared on a semiconductor photovoltaic device. The photoelectrical angle sensor with three-layer semiconductor structure has the advantages of greatly improved and extended dynamic performance and stability for long-term service.
Description
Technical field
The present invention relates to a kind of semiconductor optoelectronic angle transducer of three-decker, belong to technical field of semiconductors.
Background technology
The present invention is mainly used in needs rotational angle micrometric measurement and pinpoint servo system.It is the core technology of laser technology field light deflection component.Metering system commonly used at present is the electro-optical pickoff of capacitance type sensor and two-layer structure.There is following shortcoming in capacitance type sensor: 1, circuit complexity, and by the discrete component overlap joint, there is not Integrated Solution to select, mainly comprise capacitor, resistor, inductance coil and transistor in the circuit.2, poor stability, the circuit instability of discrete component overlap joint, temperature environment, atmospheric humidity influence very big for certainty of measurement, generally can only guarantee 1/000 certainty of measurement, easy break-down.3, debug difficulties, the gap between capacitor plate and the dielectric object requires very accurate, and the high consistency of manufacturing process difficulty can't guarantee.The extensive use of photo-electric angle sensor has significantly improved the performance index of the accurate measurement and positioning of angle.But common photoelectric sensor is two layer devices, and is simple in structure, and principle is directly perceived, because the limitation of material and manufacturing process, its dynamic property is not good, fails to give full play to the good characteristic of electro-optical pickoff spare.
Summary of the invention
The characteristics that the present invention is different from existing electro-optical pickoff are, have used the semiconductor device of three-decker, significantly improve and the dynamic property of extension sensor, and principle is as follows:
According to semiconductor photoproduction voltaic principle, prepare the PN junction of required form at monocrystalline silicon piece through oxidation, mask, etching, diffusion, see Fig. 1.The silicon chip back side is anode, and the front is a negative electrode, when the light source irradiation PN junction, produces the photovoltage electric current.
Wherein: Vco open circuit voltage, the A curve factor, K Boltzmann constant, T absolute temperature, q charge value, JI photoelectric current, Jo reverse saturation current.Can be derived by formula one, Vco only changes with light-receiving area when light illumination is constant relatively.
On the PN junction of above-mentioned preparation, adhere to the 3rd layer of material two kinds of methods arranged:
1, increase anti-reflection, the counnter attack of plating one deck, optical filtering resistive film at the device sensitive surface, this film size, material, thickness, electrical characteristics all can change as required.As Fig. 1.
2, the PN junction to above-mentioned preparation carries out the secondary diffusion, produces a resistive layer as required, and the diffusion concentration of this resistive layer, thickness, electrical characteristics all can change.As Fig. 2.Carrying out secondary diffusion device extraction electrode afterwards is two, A and B.
Implementation method
1, photoelectric sensor shape and installation method such as Fig. 3, two fan-shaped sensors A, B center on a center of circle, light source by directly over inject, the butterfly anti-dazzling screen is fixed on the rotation axis between light source and transducer, A, B transducer detect the photovoltage under the light-receiving area separately respectively, rotate the butterfly anti-dazzling screen and changed the light-receiving area of A, B transducer, A, B photovoltage change thereupon.This two-way voltage signal amplifies through difference, can obtain the angle changing of rotation axis.
2, photoelectric sensor shape and installation method such as Fig. 4, four fan-shaped sensors A, B, C, B center on a center of circle, light source by directly over inject, the butterfly anti-dazzling screen is fixed on the rotation axis between light source and transducer, A, B, C, D transducer are bridge-type and are connected in series and detect photovoltage under the light-receiving area separately respectively, rotate the butterfly anti-dazzling screen and changed the light-receiving area of A, B, C, D transducer, A, B, C, D photovoltage change thereupon.Because AC, BD series connection draws two-way voltage signal ac, bd, this two-way voltage signal amplifies through difference, can obtain the angle changing of rotation axis.
3, photoelectric sensor shape and installation method such as Fig. 5, the fan-shaped sensors A of a slice, the output of B two-way, when light source from directly over when injecting, the photovoltaic voltage that produces will arrive A, B end by the resistance that secondary diffuses to form respectively, along with the anti-dazzling screen angle changes, the zone that produces photovoltaic voltage will change, and be equivalent to change the divider resistance between A, the B output, A, B two paths of signals difference are amplified, can obtain the angle changing of rotation axis.
4, photoelectric sensor shape and installation method such as Fig. 6, two fan-shaped sensors A, B, C, D four tunnel export, when light source from directly over when injecting, the photovoltaic voltage that produces will arrive A, B respectively by the resistance that secondary diffuses to form, and C, D end is along with the anti-dazzling screen angle changes, the zone that produces photovoltaic voltage will change, be equivalent to change the divider resistance between A, B and C, the D output, AD, BC four road signals difference of suing for peace has respectively again been amplified, can obtain the angle changing of rotation axis.
Description of drawings
Fig. 1 is the semiconductor optoelectronic angle transducer structural representation of three-decker, R---resistive layer among the figure, K---negative electrode, A---anode.
Fig. 2 is the dual output end mode of the semiconductor optoelectronic angle transducer structural representation of three-decker, R---resistive layer among the figure, K---negative electrode, A---anode.
Fig. 3 is the basic implementation method of the semiconductor optoelectronic angle transducer of three-decker, the fan-shaped transducer 4---of 1---light source 2---anti-dazzling screen 3---rotation axis A---detection signal output B---detection signal output among the figure.
Fig. 4 is the enhancing implementation method of the semiconductor optoelectronic angle transducer of three-decker, the fan-shaped transducer 4---of 1---light source 2---anti-dazzling screen 3---rotation axis ABCD---detection signal output a among the figure, b---detection signal output (series connection or in parallel).
Fig. 5 is the basic implementation method of the semiconductor optoelectronic angle transducer of three-decker, the fan-shaped transducer 4---of 1---light source 2---anti-dazzling screen 3---rotation axis A---detection signal output B---detection signal output among the figure.
Fig. 6 is the enhancing implementation method of the semiconductor optoelectronic angle transducer of three-decker, the fan-shaped transducer 4---of 1---light source 2---anti-dazzling screen 3---rotation axis ABCD---detection signal a among the figure, b---detection signal output (parallel connection).
Claims (2)
1. the semiconductor optoelectronic angle transducer of a three-decker and application process thereof.
2. design any electro-optical pickoff that inspires thus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100010906A CN101232056A (en) | 2007-01-24 | 2007-01-24 | Semiconductor optoelectronic angle transducer with three-layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100010906A CN101232056A (en) | 2007-01-24 | 2007-01-24 | Semiconductor optoelectronic angle transducer with three-layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101232056A true CN101232056A (en) | 2008-07-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100010906A Pending CN101232056A (en) | 2007-01-24 | 2007-01-24 | Semiconductor optoelectronic angle transducer with three-layer structure |
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| Country | Link |
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| CN (1) | CN101232056A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104596551A (en) * | 2013-10-30 | 2015-05-06 | 西门子公司 | Collision Sensor Device for a Medical Apparatus, and Medical Apparatus |
| CN111998875A (en) * | 2020-08-19 | 2020-11-27 | 北京市汉华环球科技发展有限责任公司 | Angular position sensor based on photoelectric detector and measuring method thereof |
-
2007
- 2007-01-24 CN CNA2007100010906A patent/CN101232056A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104596551A (en) * | 2013-10-30 | 2015-05-06 | 西门子公司 | Collision Sensor Device for a Medical Apparatus, and Medical Apparatus |
| US9737270B2 (en) | 2013-10-30 | 2017-08-22 | Siemens Aktiengesellschaft | Collision sensor device for a medical apparatus, and medical apparatus |
| CN104596551B (en) * | 2013-10-30 | 2017-09-29 | 西门子公司 | Crash sensor device and medical equipment for medical equipment |
| CN111998875A (en) * | 2020-08-19 | 2020-11-27 | 北京市汉华环球科技发展有限责任公司 | Angular position sensor based on photoelectric detector and measuring method thereof |
| CN111998875B (en) * | 2020-08-19 | 2022-04-19 | 北京市汉华环球科技发展有限责任公司 | Angular position sensor based on photoelectric detector and measuring method thereof |
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