CN102544185A - Light spot position detection sensor - Google Patents
Light spot position detection sensor Download PDFInfo
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- CN102544185A CN102544185A CN2011104492923A CN201110449292A CN102544185A CN 102544185 A CN102544185 A CN 102544185A CN 2011104492923 A CN2011104492923 A CN 2011104492923A CN 201110449292 A CN201110449292 A CN 201110449292A CN 102544185 A CN102544185 A CN 102544185A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a light spot position detection sensor. The light spot position detection sensor comprises a first low-resistance semiconductor layer, a high-resistance semiconductor layer, a second low-resistance semiconductor layer and an insulating anti-reflection protection layer, wherein the first low-resistance semiconductor layer, the high-resistance semiconductor layer, the second low-resistance semiconductor layer and the insulating anti-reflection protection layer are arranged successively, the first low-resistance semiconductor layer and the high-resistance semiconductor layer are of the same conducting type; the second low-resistance semiconductor layer and the high-resistance semiconductor layer are of reverse conducting types, so that a semiconductor PN junction is formed; the doping concentration of the second low-resistance semiconductor layer is higher than the doping concentration of the high-resistance semiconductor layer; the surface of the insulating anti-reflection protection layer is provided with four same electrodes; the four electrodes define a square effective photosensitive area; and the surface of the first low-resistance semiconductor layer is provided with a metal layer. The light spot position detection sensor works on the basis of an avalanche breakdown principle, response current has a self-activation amplification function, and the sensitivity is greatly increased; and the light spot position detection sensor can be manufactured with an ordinary silicon wafer, so that the material cost is low, and the manufacturing cost of the sensor is lowered remarkably.
Description
Technical field
The present invention relates to a kind of transducer, be specifically related to a kind of light spot position detecting sensor.
Background technology
The light spot position detecting sensor is widely used in measurement and control, remote optical control system, displacement and vibration monitoring, laser beam calibration, automatic range detection system and the fields such as human motion and analytical system of optical position and angle.
Traditional light spot position detecting sensor is produced on the silicon materials, is made up of the large tracts of land PIN photodiode, and it compares advantage such as have the position resolution height, response current is simple, quick with the separate unit detector array.
The report of making PIN type light spot position detecting sensor on the SOI substrate silicon is also arranged in recent years.Though adopt the PIN structure to realize that light spot position detects aforementioned advantages such as the detection sensitivity height is arranged, owing to relate to the I layer of material of using nearly intrinsic, increases manufacturing cost greatly.
Summary of the invention
To the deficiency that prior art exists, the object of the invention provides a kind of light spot position detecting sensor that improves sensitivity.
To achieve these goals, the present invention realizes through following technical scheme:
The present invention includes the first low resistance semiconductor layer, high resistance semiconductor layer, the second low resistance semiconductor layer and the insulation antireflection protective layer that set gradually; The first low resistance semiconductor layer is identical with the conduction type of high resistance semiconductor layer; The conductivity type opposite of the high resistance semiconductor layer and the second low resistance semiconductor layer forms semiconductor PN; The doping content of the second low resistance semiconductor layer is higher than the doping content of high resistance semiconductor layer; When semiconductor PN is anti-inclined to one side like this; Depletion region is mainly expanded to high resistance semiconductor layer, thereby makes the reverse withstand voltage easy control of device; The surface of insulation antireflection protective layer is provided with four identical electrodes, and four electrodes surround effectively photosensitive region of square; The surface of the first low resistance semiconductor layer is provided with metal level.
When no luminous point shines square effectively during photosensitive region, this semiconductor PN is anti-inclined to one side, and no current flows through.
As light spot to square effectively during photosensitive region; The semiconductor PN position that then point of irradiation is corresponding down is owing to produce a large amount of photo-generated carriers; Cause semiconductor PN place avalanche breakdown under this point; Thereby produce considerable reverse current, this electric current is lateral flow in the second low resistance semiconductor layer, and distributes size of current according to four electrode positions; Through measuring the size of current on these four electrodes, utilize existing formula can calculate the two-dimensional position of luminous point then at the effective photosensitive region of square.
Operate as normal bias voltage between above-mentioned electrode and the metal level is slightly less than the avalanche breakdown voltage of (in the concrete little 1V, can not carry concrete numerical value, the form of presentation here is the common practise of this area) semiconductor PN.
What the above-mentioned first low resistance semiconductor layer, high resistance semiconductor layer and the second low resistance semiconductor layer adopted is common silicon chip.
Form high resistance semiconductor layer at the above-mentioned first low resistance semiconductor laminar surface through epitaxy.
On above-mentioned high resistance semiconductor layer, form the second low resistance semiconductor layer through diffusion method or ion implantation.
Form insulation antireflection protective layer at the above-mentioned second low resistance semiconductor laminar surface through oxidation and low-pressure chemical vapor phase deposition.
Above-mentioned insulation antireflection protective layer comprises silica and silicon nitride.
The present invention is based on the avalanche breakdown principle work, response current has the self-excitation amplification, and sensitivity is greatly enhanced; The first low resistance semiconductor layer of the present invention, high resistance semiconductor layer and the second low resistance semiconductor layer can adopt common silicon chip to make, and the cost of material is low, significantly reduced the manufacturing cost of transducer.
Description of drawings
Fig. 1 is a light spot position detecting sensor structural representation of the present invention.(s representes among the figure be square effectively in the photosensitive region more arbitrarily)
Each label among the figure: the first low resistance semiconductor layer 1, high resistance semiconductor layer 2, the second low resistance semiconductor layers 3, insulation antireflection protective layer 4, electrode 5, metal level 6.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, below in conjunction with embodiment, further set forth the present invention.
Referring to Fig. 1, the present invention includes the first low resistance semiconductor layer 1 (highly doped), high resistance semiconductor layer 2, the second low resistance semiconductor layer 3 and the insulation antireflection protective layer 4 that set gradually from top to bottom, wherein, insulation antireflection protective layer 4 is a hyaline layer.
Wherein, the first low resistance semiconductor layer 1, high resistance semiconductor layer 2, the second low resistance semiconductor layer 3 are semi-conducting material, like common silicon chip, adopt common silicon chip to make, and can significantly reduce manufacturing cost of the present invention.
The first low resistance semiconductor layer 1 is identical with the conduction type of high resistance semiconductor layer 2.
The conductivity type opposite of the high resistance semiconductor layer 2 and the second low resistance semiconductor layer 3 is formed with the semiconductor PN of certain area.
Wherein, the doping content of the second low resistance semiconductor layer 3 is higher than the doping content of high resistance semiconductor layer 2, and when semiconductor PN was anti-inclined to one side like this, depletion region was mainly expanded to high resistance semiconductor layer 2, thereby makes the reverse withstand voltage easy control of device.
The upper surface of insulation antireflection protective layer 4 is provided with 5, four electrodes 5 of four identical electrodes and surrounds effectively photosensitive region of square.In four electrodes 5 two symmetrically, two electrodes 5 in addition are also symmetrical.
The lower surface of the first low resistance semiconductor layer 1 is provided with metal level 6.
Four electrodes 5 are connected with metal level 6 respectively through lead.
In the present embodiment, form high resistance semiconductor layer 2 through epitaxy at the first low resistance semiconductor layer, 1 upper surface.
In the present embodiment, form the second low resistance semiconductor layer 3 through diffusion method or ion implantation at high resistance semiconductor layer 2 upper surfaces.
In the present embodiment, form insulation antireflection protective layer 4 through oxidation and low-pressure chemical vapor phase deposition at the second low resistance semiconductor layer, 3 upper surface; Insulation antireflection protective layer 4 specifically comprises silica and silicon nitride.
The course of work of the present invention is following:
During work, between every electrode 5 and metal level 6, apply reversed bias voltage, make semiconductor PN anti-inclined to one side, and make the avalanche breakdown voltage of reversed bias voltage a little less than semiconductor PN.
When no luminous point shines square effectively during photosensitive region, this semiconductor PN is anti-inclined to one side, but no current flows through.
As light spot to square effectively during photosensitive region; Such as the s point position in the effective photosensitive region of square; The semiconductor PN position that then the s point is corresponding down causes semiconductor PN place avalanche breakdown under this point, thereby produces considerable reverse current owing to produce a large amount of photo-generated carriers.This electric current is in the second low resistance semiconductor layer, 3 beginning lateral flow, and because four electrodes 5 are arranged, 5 at electrode is different from avalanche breakdown point distance, thereby causes electric current in 3 reallocation of the second low resistance semiconductor layer.Through measuring four size of current on these four electrodes 5, utilize following formula just can confirm the light spot position coordinate (x, y).
In the formula, L is the effectively length of side of photosensitive region of square, I
L, I
R, I
TAnd I
BThe electric current that the electrode 5 of the electrode 5 on the left of being respectively among the figure, the electrode 5 on right side, upside and the electrode 5 of downside flow through.
Manufacturing process of the present invention is following:
At first, choose the first low resistance semiconductor layer 1 and be substrate.
Then, through epitaxy at superficial growth one deck of the first low resistance semiconductor layer 1 and the first low resistance semiconductor layer 1 high resistance semiconductor layer 2 with conduction type.
Next, on high resistance semiconductor layer 2, form the second low resistance semiconductor layer 3 of one deck films of opposite conductivity again through diffusion method or ion implantation, like this, the high resistance semiconductor layer 2 and the second low resistance semiconductor layer 3 have just constituted the semiconductor PN junction.
And then, the insulation antireflection protective layer of forming by silica and silicon nitride through oxidation and low-pressure chemical vapor phase deposition growth one deck on the second low resistance semiconductor layer, 3 surface again 4.
At last, form fairleads through photoetching, corrosion insulation antireflection protective layer 4, splash-proofing sputtering metal on the surface and photoetching corrosion form four electrodes 5; The lower surface of the first low resistance semiconductor layer 1 also covers layer of metal layer 6 through sputtering method.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection range to be defined by appending claims and equivalent thereof.
Claims (7)
1. a light spot position detecting sensor is characterized in that, comprises the first low resistance semiconductor layer (1), high resistance semiconductor layer (2), the second low resistance semiconductor layer (3) and the insulation antireflection protective layer (4) that set gradually;
The said first low resistance semiconductor layer (1) is identical with the conduction type of high resistance semiconductor layer (2);
Said high resistance semiconductor layer (2) forms semiconductor PN with the conductivity type opposite of the second low resistance semiconductor layer (3), and the doping content of the said second low resistance semiconductor layer (3) is higher than the doping content of high resistance semiconductor layer (2);
The surface of said insulation antireflection protective layer (4) is provided with four identical electrodes (5), and four said electrodes (5) surround effectively photosensitive region of square;
The surface of the said first low resistance semiconductor layer (1) is provided with metal level (6).
2. light spot position detecting sensor according to claim 1 is characterized in that, the operate as normal bias voltage between said electrode (5) and the metal level (6) is slightly less than the avalanche breakdown voltage of semiconductor PN.
3. light spot position detecting sensor according to claim 1 is characterized in that, what the said first low resistance semiconductor layer (1), high resistance semiconductor layer (2) and the second low resistance semiconductor layer (3) adopted is common silicon chip.
4. according to any described light spot position detecting sensor of claim 1 to 3, it is characterized in that, form high resistance semiconductor layer (2) through epitaxy on the said first low resistance semiconductor layer (1) surface.
5. according to any described light spot position detecting sensor of claim 1 to 3, it is characterized in that, go up at said high resistance semiconductor layer (2) and form the second low resistance semiconductor layer (3) through diffusion method or ion implantation.
6. according to any described light spot position detecting sensor of claim 1 to 3, it is characterized in that, form insulation antireflection protective layer (4) through oxidation and low-pressure chemical vapor phase deposition on the said second low resistance semiconductor layer (3) surface.
7. light spot position detecting sensor according to claim 6 is characterized in that, said insulation antireflection protective layer (4) comprises silica and silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104492923A CN102544185A (en) | 2011-12-29 | 2011-12-29 | Light spot position detection sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104492923A CN102544185A (en) | 2011-12-29 | 2011-12-29 | Light spot position detection sensor |
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| CN102544185A true CN102544185A (en) | 2012-07-04 |
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| CN2011104492923A Pending CN102544185A (en) | 2011-12-29 | 2011-12-29 | Light spot position detection sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103615961A (en) * | 2013-11-19 | 2014-03-05 | 华中科技大学 | Spiral photoelectric position-sensitive locating device and method |
| CN106837929A (en) * | 2015-12-01 | 2017-06-13 | Smc株式会社 | Position-detection sensor |
| CN107023535A (en) * | 2015-12-01 | 2017-08-08 | Smc株式会社 | Position-detection sensor |
| CN107533126A (en) * | 2015-04-22 | 2018-01-02 | 特里纳米克斯股份有限公司 | Detector for the optical detection of at least one object |
| CN113871405A (en) * | 2020-06-30 | 2021-12-31 | 北京师范大学 | Position sensitive silicon photomultiplier detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1031779A (en) * | 1987-08-12 | 1989-03-15 | 中山大学 | Device for sensing optic position of amorphous silicon |
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| CN202434554U (en) * | 2011-12-29 | 2012-09-12 | 东南大学 | Light spot location detection sensor |
-
2011
- 2011-12-29 CN CN2011104492923A patent/CN102544185A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1031779A (en) * | 1987-08-12 | 1989-03-15 | 中山大学 | Device for sensing optic position of amorphous silicon |
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| CN202434554U (en) * | 2011-12-29 | 2012-09-12 | 东南大学 | Light spot location detection sensor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103615961A (en) * | 2013-11-19 | 2014-03-05 | 华中科技大学 | Spiral photoelectric position-sensitive locating device and method |
| CN103615961B (en) * | 2013-11-19 | 2016-03-23 | 华中科技大学 | A kind of spiral photoelectric position-sensitive locating device and method |
| CN107533126A (en) * | 2015-04-22 | 2018-01-02 | 特里纳米克斯股份有限公司 | Detector for the optical detection of at least one object |
| CN106837929A (en) * | 2015-12-01 | 2017-06-13 | Smc株式会社 | Position-detection sensor |
| CN107023535A (en) * | 2015-12-01 | 2017-08-08 | Smc株式会社 | Position-detection sensor |
| CN113871405A (en) * | 2020-06-30 | 2021-12-31 | 北京师范大学 | Position sensitive silicon photomultiplier detector |
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Application publication date: 20120704 |