CN101213829A - CMOS image sensor pixel with selectable binning - Google Patents
CMOS image sensor pixel with selectable binning Download PDFInfo
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- CN101213829A CN101213829A CNA2006800191017A CN200680019101A CN101213829A CN 101213829 A CN101213829 A CN 101213829A CN A2006800191017 A CNA2006800191017 A CN A2006800191017A CN 200680019101 A CN200680019101 A CN 200680019101A CN 101213829 A CN101213829 A CN 101213829A
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Abstract
An image sensor includes a plurality of pixels, at least two pixels each having a photodetector; a charge-to-voltage conversion region; an input to an amplifier; and a switch for selectively connecting the charge-to-voltage conversion regions.
Description
Technical field
The present invention relates generally to field of image sensors, especially, relate to and have the optionally imageing sensor of the pixel of joint charge charge.
Background technology
Pixel architecture such as Fig. 1 of the CMOS CMOS active pixel sensor of prior art are shown in 2 and 3.With reference to Fig. 1, the charge voltage transition zone n that this four transistor pixels has photo-detector n-PD and all has in each pixel
+This architecture provides some advantages.First advantage is by charge voltage transition zone n
+Global shutter (global shutter) operation as the memory block.Second advantage is pixel symmetry.Each pixel all is identical, and this all provides the same photoresponse for each pixel.This pixel architecture also has inferior position, and first inferior position is for big Pixel Dimensions, and the electric capacity of charge voltage transition zone is too little and can not remain on all electric charges of accumulating in the photo-detector, and second inferior position is charge-domain binning in lacking pixel.
Pixel shown in Figure 2 has solved first inferior position, by introduce additional capacity C in each pixel
AddIncreased charge voltage transition zone electric capacity.Though this has solved the capacitance problem of charge voltage transition zone, and can provide more linear output response, it has owing to distribute to additional capacitor C in the pixel
AddThe zone and the inferior position that causes the fill factor, curve factor of pixel to reduce.The fill factor, curve factor that reduces has adverse effect to the charging capacity and the dynamic range of pixel.
Pixel shown in Figure 3 is by sharing charge voltage conversion n between neighbor
+And charge-domain binning scarce capacity, charge voltage district electric capacity is low and fill factor, curve factor is low inferior position have been solved.This pixel architecture has other inferior positions.First inferior position is a pixel symmetry.Each pixel is not the same, and this can cause the system's difference in photoresponse, causes the static image noise that may reduce picture quality.Second inferior position is the deficiency of global shutter capability.Because being neighbor, shares the charge voltage transition zone, so can not be used as charge storage region to isolate the signal that single photo-detector is caught.
Therefore, need the imageing sensor that can overcome above-mentioned shortcoming.
Summary of the invention
The present invention is intended to overcome the one or more of foregoing problems.Brief and comprehensive summary, according to an aspect of the present invention, the invention reside in the imageing sensor that comprises a plurality of pixels, at least two pixels comprise respectively: (a) photo-detector; (b) charge voltage transition zone; (c) to the input of amplifier; The switch that optionally connects the charge voltage transition zone.
By reading following DETAILED DESCRIPTION OF THE PREFERRED and appended claims and, understanding more clearly understanding and cognition these and other aspect of the present invention, purpose, feature and advantage with reference to accompanying drawing.
The invention discloses a kind of CMOS active pixel: the single four transistors operation that (a) has global shutter with following advantage; (b) conversion gain selected that produces of the use by parts in the neighborhood pixels; (c) charge-domain the selected binning on horizontal or vertical direction (charge domain binning); (d) to reducing the more High Data Rate that resolution is read; (e) because all the same pixel symmetry of all pixels.
Description of drawings
Fig. 1 is the pixel of the active picture element image sensor of prior art;
Fig. 2 is having of prior art be used to the to float image sensor pixel of floating of electric capacity of increase of diffusion;
Fig. 3 is the image sensor pixel with shared amplifier of prior art;
Fig. 4 is the schematic diagram of first embodiment of the invention, and its selectivity that shows the charge voltage transition zone by in vertical direction connects five transistor pixels that programmable transition gain and binning are provided;
Fig. 5 is the schematic diagram of second embodiment of the invention, and it shows selectivity by the charge voltage transition zone on vertical and horizontal direction and is connected and provides programmable transition to gain and five transistor pixels of binning;
Fig. 6 is the sequential chart of Fig. 1 under the situation that does not have the charge voltage transition zone to link together;
Fig. 7 is the sequential chart of Fig. 1 under the situation that two adjacent charge voltage transition zones link together;
Fig. 8 is the sequential chart of Fig. 1 under the situation that three charge voltage transition zones link together;
Fig. 9 is the schematic diagram of third embodiment of the invention, and its selectivity that shows by photo-detector connects four transistor pixels that programmable transition gain and binning are provided, and this photo-detector also can be as the charge voltage transition zone on the vertical direction;
Figure 10 is the schematic diagram of fourth embodiment of the invention, and its selectivity that shows by photo-detector connects four transistor pixels that programmable transition gain and binning are provided, and this photo-detector also can be as the charge voltage transition zone on vertical and the horizontal direction;
Figure 11 is the schematic diagram of fifth embodiment of the invention, and its selectivity that shows the charge voltage transition zone of the pixel with same color filter by in vertical direction connects five transistor pixels that programmable transition gain and binning are provided;
Figure 12 is the schematic diagram of fifth embodiment of the invention, and it shows selectivity by the charge voltage transition zone of the pixel with same color filter on vertical and horizontal direction and is connected and provides programmable transition to gain and six transistor pixels of binning;
Figure 13 is the schematic diagram of sixth embodiment of the invention, and it shows the selectivity as the photo-detector of charge voltage transition zone by the pixel that has same color filter on vertical and horizontal direction and is connected and provides programmable transition to gain and five transistor pixels of binning;
Figure 14 is the digital camera that the typical commercial embodiment of imageing sensor of the present invention is shown.
Embodiment
Before going through the present invention, clear definition CMOS CMOS active pixel sensor is enlightenment.CMOS is meant the complementary metal oxide silicon transistor, and wherein complementation has been meant by two transistors of different dopant (is n type dopant, and is p type dopant) composition and has worked together.N type dopant transistor is called as NMOS, and p type dopant transistor is called as PMOS.CMOS active pixel sensor is meant the electronic image sensor with the active device relevant with each pixel (such as transistor).
Referring now to Fig. 4, one embodiment of the present of invention show CMOS active picture element image sensor 10 of the present invention, and it can realize the charge-domain binning in optional mode.As shown in Figure 1, this is the simplest embodiment of five transistor pixels.Each pixel 20 comprises photo-detector 30, is preferably the n type photo-detector of catching the incident light that is converted to electric charge.Transmission gate 40 is applied pulse so that electric charge is sent to signal based on receiving the diffusion of floating (floating diffusion) 50 that the quantity of electric charge changes from photo-detector 30.Reset transistor 60 with reset gate 70 is applied the pulse electric charge of diffusion on 50 of floating to reset, and select the row selecting transistor 80 of grid 90 to apply pulse to select the particular row of pel array to having row.Source follower input transistors 100 detects the voltage in the diffusion 50 of floating and amplifies this voltage.Each all has the storehouse and selects a plurality of " storehouse selections " transistor 110 of grid 120 required arbitrarily combination to be addressed, and being electrically connected adjacent floating diffusion region territory 50, thereby provides merging to spread the ability of 50 electric charge from adjacent floating.For example, merged from two diffusion electric charges of 50 of floating or merged from the electric charge of all three diffusions 50 of floating.This configuration is called as vertical binning.
The design of Fig. 4 is called as five transistors, does not have the pixel (5TNS) of sharing.The benefit of this pixel architecture is: (1) pixel is identical, and therefore the still image noise relevant with configuration difference alleviated; (2) the charge-domain binning can be selected to finish to connect the adjacent diffusion of floating by connecting the storehouse; (3) the variable charge voltage transitions that single pixel is read can select the address to finish by sequential and row that the storehouse is selected; (4) the charge-domain binning is configurable rather than hard wire.
With reference to Fig. 5, horizontal bin is selected also can select transistor (HBSEL) 130 (hereinafter referred to as six transistor arrangement) to finish by adding horizontal bin.In this embodiment, Fu Jia transistor 130 allows horizontal binning by a plurality of diffusions 50 of floating.The described BSEL transistor 110 of Fig. 4 is called as and is designated as vertical bin selection transistor VBSEL110 to represent the selectivity connection of the adjacent diffusion 50 of floating of row in this embodiment.Once more, determined by the number of selecting 130 diffusions 50 of floating that connect by one or more horizontal bin by the number of the diffusion 50 of floating of binning.For clarity sake, should notice that vertical bin selection transistor 110 vertical binnings as discussed above equally connect.
With reference to Fig. 6, it shows Fig. 4 sequential chart of not linking together of diffusion that causes floating there not being BSEL transistor 110 to be switched on.
With reference to Fig. 7, it shows the sequential chart of Fig. 4 when the vertical adjacent diffusion 50 of floating links together.As a result, be used for just being addressed and the BSEL transistor 110 of the row read is switched on, row is floated and the diffusion 50 of floating of adjacent lines is joined together to form the single diffusion sense node of floating so just be read out.In this configuration, conversion gain is reduced and float diffusion 50 electric capacity and charge capacity are increased.For big element sensor, wherein the charge capacity of photodiode 30 is bigger, but diffusion 50 electric capacity of floating are too little and can not handle the photodiode capacity, at this moment is used for enhanced charge capacity that single photodiode 30 reads and floats and wish.Diffusion 50 capacity of floating that increase need just can not finished by integrated big electric capacity in each pixel 20.
It is shown in Figure 8 to connect three adjacent diffusion 50 sequential charts together of floating of row.In this case, two BSEL transistors 110 are switched on, and row that just is being addressed and adjacent lines are so that the diffusion 50 of floating of the row that just is being read out and two adjacent lines is joined together to form the single diffusion sense node of floating.In this configuration, further reduced conversion gain and float and further increased the diffusion charge capacity of floating.
The example that illustrates so far all is about carrying out four transistor pixels of the two samplings of true correlation (CDS).Fig. 9 and 10 show respectively with Figure 4 and 5 in be applied to the identical notion of three transistors (3T).In this case, BSEL transistor 110 is connected between the photodiode 30 of adjacent lines.The pixel that obtains is four transistors (4T) now.Other class of operation is similar to pixel the operation described in the Figure 4 and 5.For the pixel in Fig. 9 and 10, photodiode 30 is also as charge voltage switching node 50 or sense node 50.
Should note selecting how many pixels and BSEL (VBSEL) transistor 110 to be connected and to be independent of the binning operation with 130.For example, wish to connect three diffusions 50 of floating and keep being stored in an electronics in the photodiode 30 to reach enough diffusion capacitances of floating.Except connecting the selection, the diffusion of floating optionally to use or not use binning now.Under light conditions, can select " not connecting " neighbor to reduce sense node capacitance and to increase conversion gain so that the signal to noise ratio of maximization transducer in the low light zone.
An alternative embodiment of the invention is shown in Figure 11.BSEL transistor 110 can be set to connect the neighbor 20 of same color filter pattern rather than connect adjacent pixels physically.For example, color 1 links together, and color 2 links together.
Another embodiment of the present invention is shown in Figure 12.This embodiment is similar to embodiment shown in Figure 11, and its supplementary features are can carry out vertical BSEL (VBSEL) transistor transistorized selective addressing is connected the row and column neighbor of same color filter pattern with horizontal BSEL (HBSEL).
Another embodiment of the present invention is shown in Figure 13.Except photo-detector also was used as float diffusion and charge voltage transition zone, this embodiment was similar to embodiment shown in Figure 12.
Figure 14 is the digital camera 160 that comprises imageing sensor 10 of the present invention, is used to the exemplary embodiments that illustrates that ordinary consumer is accustomed to.
List of parts
10 imageing sensors
20 pixels
30 photodetector/photodiode
40 transmission gates
50 diffusions of floating
60 reset transistors
70 resetting gates
80 row selecting transistors
90 row are selected grid
100 source follower input transistors
110 " storehouse selection " transistor (BSEL)
120 storehouses select grid or vertical bin to select transistor (VBSEL)
130 horizontal bin are selected transistor (HBSEL)
160 digital cameras
Claims (34)
1. imageing sensor comprises:
A plurality of pixels, at least two pixels comprise respectively:
(a) photo-detector;
(b) charge voltage transition zone;
(c) to the input of amplifier; And
Be used for optionally connecting the switch of charge voltage transition zone.
2. imageing sensor as claimed in claim 1, wherein each charge voltage transition zone is connected to photo-detector by transmission gate.
3. imageing sensor as claimed in claim 1, the wherein whole part that forms photo-detector of each charge voltage transition zone.
4. imageing sensor as claimed in claim 3, wherein said photo-detector is a photodiode.
5. imageing sensor as claimed in claim 1, wherein said switch is a transistor.
6. imageing sensor as claimed in claim 5, wherein said transistor is a nmos pass transistor.
7. imageing sensor as claimed in claim 1, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of capable neighbor.
8. imageing sensor as claimed in claim 1, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row neighbor.
9. imageing sensor as claimed in claim 1, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row and column neighbor.
10. imageing sensor as claimed in claim 3, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of capable neighbor.
11. imageing sensor as claimed in claim 3, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row neighbor.
12. imageing sensor as claimed in claim 3, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row and column neighbor.
13. imageing sensor as claimed in claim 1 comprises that further the color filter array and this switch that stride across (spanning) these a plurality of pixels optionally connect by the charge voltage transition zone of the neighbor that same color covered of color filter array.
14. imageing sensor as claimed in claim 3 comprises that further the color filter array and this switch that stride across these a plurality of pixels optionally connect by the charge voltage transition zone of the neighbor that same color covered of color filter array.
15. imageing sensor as claimed in claim 1, wherein said switch are used as the charge voltage transition zone and desired electric capacity are provided or provide the whole of the device of merging from the electric charge of adjacent light detector or combination arbitrarily.
16. imageing sensor as claimed in claim 1, wherein said switch provides desired electric capacity for the charge voltage transition zone.
17. imageing sensor as claimed in claim 1, wherein said switch provide the device of merging from the electric charge of adjacent light detector.
18. a camera comprises:
Imageing sensor, it comprises:
A plurality of pixels, at least two pixels comprise respectively:
(a) photo-detector;
(b) charge voltage transition zone;
(c) to the input of amplifier; And
Be used for optionally connecting the switch of charge voltage transition zone.
19. camera as claimed in claim 18, wherein each charge voltage transition zone is connected to photo-detector by transmission gate.
20. camera as claimed in claim 18, the wherein whole part that forms photo-detector of each charge voltage transition zone.
21. camera as claimed in claim 20, wherein said photo-detector is a photodiode.
22. camera as claimed in claim 18, wherein said switch is a transistor.
23. camera as claimed in claim 22, wherein said transistor is a nmos pass transistor.
24. as claimed in claim 18 according to machine, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of capable neighbor.
25. camera as claimed in claim 18, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row neighbor.
26. camera as claimed in claim 18, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row and column neighbor.
27. camera as claimed in claim 20, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of capable neighbor.
28. camera as claimed in claim 20, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row neighbor.
29. camera as claimed in claim 20, wherein these a plurality of pixels are arranged in rows and columns and this switch optionally connects the charge voltage transition zone of row and column neighbor.
30. camera as claimed in claim 18 comprises that further the color filter array and this switch that stride across these a plurality of pixels optionally connect by the charge voltage transition zone of the neighbor that same color covered of color filter array.
31. camera as claimed in claim 20 comprises that further the color filter array and this switch that stride across these a plurality of pixels optionally connect by the charge voltage transition zone of the neighbor that same color covered of color filter array.
32. as claimed in claim 18 according to machine, wherein said switch is used as the charge voltage transition zone and desired electric capacity is provided or provides the whole of the device of merging from the electric charge of adjacent light detector or combination arbitrarily.
33. camera as claimed in claim 18, wherein said switch provides desired electric capacity for the charge voltage transition zone.
34. camera as claimed in claim 18, wherein said switch provide the device of merging from the electric charge of adjacent light detector.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68610405P | 2005-06-01 | 2005-06-01 | |
| US60/686,104 | 2005-06-01 | ||
| US11/408,640 | 2006-04-21 |
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| Publication Number | Publication Date |
|---|---|
| CN101213829A true CN101213829A (en) | 2008-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800191017A Pending CN101213829A (en) | 2005-06-01 | 2006-05-26 | CMOS image sensor pixel with selectable binning |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102401906A (en) * | 2010-09-19 | 2012-04-04 | 同方威视技术股份有限公司 | Radiation detector as well as imaging device, electrode structure and image acquiring method thereof |
| CN103458197A (en) * | 2013-08-08 | 2013-12-18 | 长春长光辰芯光电技术有限公司 | Image sensor and pixel splicing array sub-pixel stringing reading method |
| CN102132558B (en) * | 2008-08-26 | 2014-04-09 | 全视科技有限公司 | Image sensor pixel with charge domain summing |
| CN105210363A (en) * | 2014-03-17 | 2015-12-30 | 索尼公司 | Solid-state imaging device, driving method therefor, and electronic apparatus |
| CN105991944A (en) * | 2015-02-23 | 2016-10-05 | 联咏科技股份有限公司 | Photosensitive unit for image sensor and photosensitive circuit thereof |
| US10090354B2 (en) | 2015-02-10 | 2018-10-02 | Novatek Microelectronics Corp. | Light sensing unit and light sensing circuit for image sensor with light sensing carriers transferred between different floating nodes |
| CN109076175A (en) * | 2016-04-14 | 2018-12-21 | 高通股份有限公司 | With the imaging sensor for combining the configurable pixel for sharing floating diffusion to divide storehouse |
| CN110753192A (en) * | 2013-03-15 | 2020-02-04 | 拉姆伯斯公司 | Conditional reset image sensor for threshold monitoring |
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2006
- 2006-05-26 CN CNA2006800191017A patent/CN101213829A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132558B (en) * | 2008-08-26 | 2014-04-09 | 全视科技有限公司 | Image sensor pixel with charge domain summing |
| CN102401906B (en) * | 2010-09-19 | 2014-03-12 | 同方威视技术股份有限公司 | Radiation detector as well as imaging device, electrode structure and image acquiring method thereof |
| CN102401906A (en) * | 2010-09-19 | 2012-04-04 | 同方威视技术股份有限公司 | Radiation detector as well as imaging device, electrode structure and image acquiring method thereof |
| CN110753192B (en) * | 2013-03-15 | 2022-04-08 | 拉姆伯斯公司 | Integrated circuit image sensor |
| CN110753192A (en) * | 2013-03-15 | 2020-02-04 | 拉姆伯斯公司 | Conditional reset image sensor for threshold monitoring |
| CN103458197A (en) * | 2013-08-08 | 2013-12-18 | 长春长光辰芯光电技术有限公司 | Image sensor and pixel splicing array sub-pixel stringing reading method |
| CN103458197B (en) * | 2013-08-08 | 2016-06-08 | 长春长光辰芯光电技术有限公司 | The string sub-pixed mapping read method of imageing sensor and pixel splicing array |
| US10403672B2 (en) | 2014-03-17 | 2019-09-03 | Sony Corporation | Solid-state imaging device with pixels having first and second photoelectric conversion units, driving method therefor, and electronic apparatus |
| CN105210363A (en) * | 2014-03-17 | 2015-12-30 | 索尼公司 | Solid-state imaging device, driving method therefor, and electronic apparatus |
| US10090354B2 (en) | 2015-02-10 | 2018-10-02 | Novatek Microelectronics Corp. | Light sensing unit and light sensing circuit for image sensor with light sensing carriers transferred between different floating nodes |
| CN105991944A (en) * | 2015-02-23 | 2016-10-05 | 联咏科技股份有限公司 | Photosensitive unit for image sensor and photosensitive circuit thereof |
| CN105991944B (en) * | 2015-02-23 | 2019-03-22 | 联咏科技股份有限公司 | Photosensitive unit and its photosensitive circuit for image sensor |
| CN109076175B (en) * | 2016-04-14 | 2021-02-26 | 高通股份有限公司 | Image sensor with pixel binning incorporating configurable shared floating diffusion |
| CN109076175A (en) * | 2016-04-14 | 2018-12-21 | 高通股份有限公司 | With the imaging sensor for combining the configurable pixel for sharing floating diffusion to divide storehouse |
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