CN101207093A - SiGe relaxation backing material and method for preparing the same - Google Patents
SiGe relaxation backing material and method for preparing the same Download PDFInfo
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- CN101207093A CN101207093A CNA2006101655519A CN200610165551A CN101207093A CN 101207093 A CN101207093 A CN 101207093A CN A2006101655519 A CNA2006101655519 A CN A2006101655519A CN 200610165551 A CN200610165551 A CN 200610165551A CN 101207093 A CN101207093 A CN 101207093A
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Abstract
The invention discloses SiGe relaxed substrate material, which relates to the semiconductor material technology field. The SiGe relaxed substrate material is composed of a Si substrate and an SiGe composition graded buffer layer epitaxially which grows on the Si substrate, n strainless SiGe isolation layers are inserted into the SiGe composition graded buffer layer, and the strainless SiGe isolation layers divides the SiGe composition graded buffer layer into n+1 layers, and the n is a natural number. The invention simultaneously discloses a preparation method of the SiGe relaxed substrate material. Through using the invention, the roughness of the surface and the dislocation density of the SiGe relaxed substrate are effectively decreased, and therefore the thickness of the entire relaxed substrate is reduced, the epitaxial time is shortened, and the cost is saved.
Description
Technical field
The present invention relates to technical field of semiconductor, relate in particular to a kind of SiGe relaxation backing material and preparation method thereof.
Background technology
The SiGe/Si heterostructure has become the important materials in electronics and the photonic device application, especially utilizes the high Ge content SiGe layer of relaxation can make device with high electron mobility, quantum cascade laser etc.The relaxation SiGe layer that how obtains to have low-dislocation-density and surface roughness on the Si substrate becomes the key of research.
The last extension Ge of Si is heterogeneous mismatch epitaxial.The lattice constant of Si and Ge is respectively 0.5431nm and 0.5658nm, and the lattice mismatch rate is up to 4.2%.Ge content in the SiGe alloy is high more, and the lattice mismatch rate between itself and the Si is just high more.
The SiGe alloy is on the Si substrate during epitaxial growth, heteroepitaxy SiGe film at first is pseudo-crystal growth on the Si substrate, be that it has the lattice constant identical with the Si substrate in the horizontal direction, this just causes having accumulated compression in the SiGe epitaxial loayer, and this strain accumulation increases with the increase of film thickness, when thickness is increased to a certain degree, the film of coherence will be in an unsure state, the direction that reduces to strain energy develops, and deformation relaxation takes place, and this thickness is called critical thickness.
Obviously, the Ge component in the SiGe layer is high more, and the lattice mismatch between the Si is big more, and stress accumulation is obvious more, and critical thickness is just more little.
When SiGe alloy generation relaxation, generally discharge stress: produce misfit dislocation and form surface undulation by two kinds of forms.When what take place is that the misfit dislocation of generation has two classes basic formation, edge dislocation and screw dislocation when producing the relaxation process of misfit dislocation.The Burgers vector of edge dislocation is vertical with dislocation line, and the Burgers vector of screw dislocation is parallel with dislocation line, and dislocation can resolve into edge dislocation and screw dislocation at any angle.Have only the Burgers vector could discharge lattice mismatch perpendicular to dislocation line and the edge dislocation component in epitaxial interface.Trend towards having little Burgers vector so that the principle of energy minimum according to dislocation, in the SiGe alloy, modal dislocation is the 60 ° dislocations of dislocation line along [110] and [110] direction.
When the surface undulation relaxation takes place when, form external waviness, perhaps island rises and falls.This fluctuating derives from the diffusion of the surface atom under the local strain energy gradient-driven.There is a little fluctuating in the surface of solids of supposing a uniaxial strain, and in the position of the paddy that rises and falls, local train can increase, and it orders about material and spreads to the peak from paddy along the surface, and paddy is deepened owing to material reduces, and stress then further increases, and becomes big thereby rise and fall.But in this course, surface area is to increase with the increase that rises and falls, so surface energy also can increase, thereby stops the further increasing that rises and falls.This competition result has determined the final fluctuating quantity of material surface.Surface dislocation density and surface roughness are excessive, all can have a strong impact on device quality.
The effective way that addresses this problem is an extension relaxation substrate on the Si substrate.The purpose of growth relaxation substrate is that mismatch stress is discharged in the relaxation substrate, and the surface of relaxation substrate have with its on want the SiGe layer of extension to be complementary lattice constant.
Therefore, requirement to the relaxation substrate layer is very high, thereby both required the generation plastic relaxation that it can be fast as far as possible to discharge stress, the defectives such as dislocation that require again to produce in this relaxation process can not influence its surface quality, thereby guarantee that the relaxation substrate surface has perfect lattice structure.
As mentioned above, in the SiGe/Si layer plastic relaxation takes place, mainly by in that { introducing 60 ° of dislocations in the 111} slip plane realizes.Screw dislocation is positioned at the two ends of misfit dislocation, and in that { slippage in the 111} face, the top forms dislocation pit at material surface.Various relaxation substrate fabrication methods all are to be based upon on the basis that how to make the minimizing of surface dislocation hole in the process that discharges stress.
At first be to utilize the stressor layers of constant composition as the dislocation filter course, utilize mismatch stress to make screw dislocation generation deviation [Appl.Phys.Lett., 1986,49 (17): 1101-1103], the effect of this method in the SiGe system is also not obvious.Other method is to adopt low temperature Si layer, and the Si layer is grown at low temperatures, is in nonequilibrium state, wherein contain a large amount of point dislocations, saturated point defect becomes the misfit dislocation source, [Thin Solid Films, 1998,336:319-322], this method can not guarantee lattice quality.
In addition, the most frequently used method is the growth components graded buffer layer at present, promptly in certain thickness the Ge component is carried out the transition to needed component [J.Appl.Phys., 1997,81 (7): 3108-3116] gradually from 0.Adopt the content gradually variational resilient coating, can make screw dislocation density can be reduced to 10
5-6/ cm
2, in commerce is used, utilized this content gradually variational resilient coating to make device.Yet because content gradually variational speed (%Ge/ μ m) is high more, residual stress is big more in the plane on surface, and surface roughness also can increase along with the increase of final Ge component and fade rates.
In order to obtain acceptable low surface roughness and low screw dislocation density, the fade rates that will make the Ge component usually is below～10%/μ m, and this just makes and must obtain the very high relaxation substrate of final Ge component, needs sizable thickness, consume the plenty of time, thereby improved cost.
Although can also adopt Sb to make surfactant, the planarization on stable growth surface reduces buffer layer thickness, and improves surface quality [Appl.Phys.Lett., 2001,79 (21): 3431-3433]; Perhaps adopt chemico-mechanical polishing (CMP) to come the surface quality of relaxation substrate is improved [Appl.Phys.Lett., 1998,72 (14): 1718-1720].But the complexity that these have all increased technology undoubtedly also makes cost increase greatly.
Therefore, be necessary to find a kind of content gradually variational buffer layer structure and growth technique thereof of further improvement.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of SiGe relaxation backing material, to reduce the thickness of whole relaxation substrate, shortens the extension time, saves cost.
Another object of the present invention is to provide a kind of preparation method of SiGe relaxation backing material, to reduce the thickness of whole relaxation substrate, shortens the extension time, saves cost.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of SiGe relaxation backing material, this SiGe relaxation backing material by the Si substrate and on the Si substrate epitaxially grown SiGe content gradually variational resilient coating constitute, and in described SiGe content gradually variational resilient coating, be inserted with n no strain SiGe separator, described no strain SiGe separator is divided into the n+1 layer with SiGe content gradually variational resilient coating, and n is a natural number.
In described SiGe content gradually variational resilient coating, along with the increase of SiGe content gradually variational buffer layer thickness, the ratio of component of Si and Ge reduces gradually.
The Ge constituent content is lower than Ge constituent content in the SiGe content gradually variational resilient coating of described no strain SiGe separator insert division in the described no strain SiGe separator.
The superiors that described SiGe content gradually variational resilient coating is not had the division of strain SiGe separator have enough little content gradually variational speed, and the content gradually variational speed that layer more down has is big more.
Described molecular beam epitaxy (MBE) or high vacuum chemical vapor deposition (UHV/CVD) epitaxy method of adopting during epitaxial growth SiGe content gradually variational resilient coating on the Si substrate carries out.
For reaching above-mentioned another purpose, the invention provides a kind of preparation method of SiGe relaxation backing material, this method may further comprise the steps:
Regulate the ratio between silicon source and the germanium source, with ε '
1Content gradually variational speed epitaxial growth Ge component changes to x from 0 on the pretreated Si sheet having carried out
1SiGe content gradually variational resilient coating; Ge component in growth is x then
1SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
1First SiGe separator; Then with ε '
2Content gradually variational speed on first SiGe separator of growth growth Ge component from X
1Change to x
2SiGe content gradually variational resilient coating; Ge component in growth is x then
2SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
2Second SiGe separator; And the like, until with ε '
nContent gradually variational speed grown the Ge component from X
nChange to x
fSiGe content gradually variational resilient coating, obtain SiGe relaxation backing material; Wherein, described ε '
n≤ ε '
N-1≤ ...≤ε '
2≤ ε '
1
This method is in the ratio of regulating between silicon source and the germanium source, with ε '
1Content gradually variational speed epitaxial growth Ge component change to x from 0
1SiGe content gradually variational resilient coating before further comprise: the silicon chip as backing material is carried out preliminary treatment, specifically comprises cleaning, drying, deoxidation.
Described epitaxial growth method comprises molecular beam epitaxy (MBE) or high vacuum chemical vapor deposition (UHV/CVD).
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this SiGe relaxation backing material provided by the invention and preparation method thereof, by in the content gradually variational resilient coating, inserting a plurality of no strain SiGe layers, whole graded bedding is divided into several portions, utilize the no strain SiGe layer that inserts effectively to prevent the upwards accumulation of dislocation and stress, make the graded bedding part that is in the bottom can adopt fast content gradually variational speed, effectively reduce the surface roughness and the dislocation density of SiGe relaxation substrate, thereby reduce the thickness of whole relaxation substrate, shorten the extension time, save cost.
2, this SiGe relaxation backing material provided by the invention and preparation method thereof, because the SiGe layer that inserts is strainless, so its insertion position, the number of plies, thickness etc. can be regulated as required largely.
Description of drawings
Fig. 1 utilizes the content gradually variational layer that inserts no strain SiGe layer to do the principle schematic of SiGe relaxation substrate;
Fig. 2 is the structural representation of SiGe relaxation backing material provided by the invention;
Fig. 3 is sample among the embodiment 1 (a) cross-sectional scans electron microscopic (TEM) photo; (b) the cross section component that is obtained by electron energy loss spectroscopy (EELS) (EELS) distributes;
Fig. 4 be among the embodiment 1 sample surfaces AFM photo (a) through Schemmel solution corrosion 2 minutes; (b) primary surface; (c) annealed 1 hour for 800 ℃;
Fig. 5 is the representative microcell Raman spectral line that the sample (a) among the embodiment 1 is gone up even relaxation SiGe layer most; (b) variation of Si-Si and Si-Ge peak position in the line sweep process.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
At first principle of the present invention is carried out brief description:
As shown in Figure 1, Fig. 1 utilizes the content gradually variational layer that inserts no strain SiGe layer to do the principle schematic of SiGe relaxation substrate.To the component content gradually variational resilient coating of single increase from lower to upper, the dislocation in the time of can calculating its balance that has distributes and surface residual stress [Appl.Phys.Lett., 1993,62 (7): 693-695]:
ρ(z)＝b
-1ε′(z)，0≤z≤z
c (1)
z
c＝W-(2λ/bcε′)
1/2 (2)
Wherein, λ is the unit length dislocation energy, and c is the biaxial strain elastic constant, and b is the mismatch component of dislocation Burgers vector, and W is the gross thickness of content gradually variational layer, and ρ (z) is the dislocation density in the unit cross-sectional area, and ε '=d ε/dz is a content gradually variational speed.The dislocation that is produced just can discharge z
cStress in the thickness is at z
cIn the above thickness, there is overstrain:
ε＝Wε′-z
cε′＝(2λε′/bc)
1/2 (3)
From top formula as can be seen, at z
cOn do not have dislocation zone state only by the decision of content gradually variational speed, and irrelevant with the gross thickness of content gradually variational layer.
Can release by top analysis, for a specific relaxation substrate, can insert strainless SiGe separator therein, whole content gradually variational layer is told a plurality of parts, has enough little content gradually variational speed as long as guarantee the part of its topmost, and following part can be suitable the quickening speed of growth, only otherwise top part is exerted an influence.
For example can insert n strainless SiGe separator in whole content gradually variational layer, be divided into n+1 part, part down can adopt fast more fade rates more more.According to formula (3), all there is little residual strain ε in the top certain thickness of every part content gradually variational layer, therefore, the component of the SiGe separator that inserts all has a little component step with going up most of graded bedding adjacent below it between the component, do not have strain in the SiGe layer that is inserted with assurance.Like this, just can effectively reduce the thickness of whole content gradually variational layer, shorten the extension time, reduce cost.Then, on this content gradually variational layer, just can extension have big relaxivity, the SiGe component conforming layer of little dislocation density and surface roughness.
Based on above-mentioned principle, Fig. 2 shows the structural representation of SiGe relaxation backing material provided by the invention, this SiGe relaxation backing material by the Si substrate and on the Si substrate epitaxially grown SiGe content gradually variational resilient coating constitute, and in described SiGe content gradually variational resilient coating, be inserted with n no strain SiGe separator, described no strain SiGe separator is divided into the n+1 layer with SiGe content gradually variational resilient coating, and n is a natural number.
In described SiGe content gradually variational resilient coating, along with the increase of SiGe content gradually variational buffer layer thickness, the ratio of component of Si and Ge reduces gradually.
The Ge constituent content is lower than Ge constituent content in the SiGe content gradually variational resilient coating of described no strain SiGe separator insert division in the described no strain SiGe separator.
The superiors that described SiGe content gradually variational resilient coating is not had the division of strain SiGe separator have enough little content gradually variational speed, and the content gradually variational speed that layer more down has is big more.
Describedly can adopt UHV/CVD during epitaxial growth SiGe content gradually variational resilient coating on the Si substrate, MBE homepitaxy method is carried out.
Based on the structural representation of SiGe relaxation backing material shown in Figure 2, the method flow to preparation SiGe relaxation backing material provided by the invention is elaborated below.
The method of the SiGe of preparation relaxation backing material provided by the invention may further comprise the steps: regulate the ratio between silicon source and the germanium source, with ε '
1Content gradually variational speed epitaxial growth Ge component changes to x from 0 on the pretreated Si sheet having carried out
1SiGe content gradually variational resilient coating; Ge component in growth is x then
1SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
1First SiGe separator; Then with ε '
2Content gradually variational speed on first SiGe separator of growth growth Ge component from X
1Change to x
2SiGe content gradually variational resilient coating; Ge component in growth is x then
2SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
2Second SiGe separator; And the like, until with ε '
nContent gradually variational speed grown the Ge component from X
nChange to x
fSiGe content gradually variational resilient coating, obtain SiGe relaxation backing material; Wherein, described ε '
n≤ ε '
N-1≤ ...≤ε '
2≤ ε
1
In the above-mentioned method for preparing SiGe relaxation backing material, need to suppose the Ge component of the SiGe relaxation substrate that will prepare in advance, select the number n of the SiGe separator of required insertion arbitrarily.Consider performance parameters such as required surface roughness that obtains or relaxivity, general institute wants the performance that obtains good more, and it is many more to need the SiGe of insertion not have the number n of straining isolated layer.The position of separator can be determined arbitrarily as required.Ge component in each separator is designated as X successively
1, X
2, X
3... X
n, the Ge component of the resilient coating of separator insert division is designated as x
1, x
2, x
3... x
nThe SiGe separator that inserts in order to guarantee does not have strain, and the Ge component X of SiGe separator is slightly less than the Ge component x of corresponding insert division, and this component step can be determined according to experiment experience and formula (3).These parameters can adopt traditional epitaxy technique to prepare sort buffer layer and needed relaxation substrate after determining.
Adopt general technology that silicon chip is carried out preliminary treatment then,, dry deoxidation etc. such as cleaning.
Begin the designed insertion SiGe of epitaxial growth then and do not have the resilient coating of straining isolated layer.Regulate the ratio between silicon source and the germanium source, with ε '
1Content gradually variational speed growth Ge component change to x from 0
1Buffer layer part, the Ge component of growing then is X
1First SiGe separator, afterwards, with ε '
2Content gradually variational speed growth Ge component from X
1Change to x
2Buffer layer part, the Ge component of growing then is X
2Second SiGe separator, and the like, until with ε '
nContent gradually variational speed grown the Ge component from X
nChange to x
fBuffer layer part.General ε '
n≤ ε '
N-1≤ ...≤ε '
2≤ ε '
1Same, according to formula (3), that selects resilient coating goes up component x most
fA little more than the Ge component in the relaxed layer that will prepare.
At last, the SiGe relaxed layer of the required Ge component of epitaxial growth on prepared resilient coating.
Embodiment
As embodiment, adopt the UHV/CVD system content gradually variational resilient coating that thickness is 2 μ m of on Si (001) substrate, having grown, its component up is gradient to 30% gradually from 0, and is 10% and 20% place in the Ge component, has inserted the Si of the about 50nm of one deck respectively
0.92Ge
0.08Layer and Si
0.84Ge
0.16Layer, last, the Si of the 600nm that on this graded bedding, grown
0.72Ge
0.28Conforming layer.Adopt the Tecnai F30 transmission electron microscope of Holland that example cross section is observed, the dislocation of measuring wherein distributes, operating voltage 300kV, and cooperate and adopt electron energy loss spectroscopy (EELS) (EELS), and the component of having measured on the cross section from bottom to top distributes.The JY-HR800 microcell Raman system that adopts France carries out line sweep with the back scattering pattern to sample surfaces, analyzes the Si of the superiors
0.72Ge
0.28The relaxivity of conforming layer and component distribute.And with contact Nanoscope-II Digital Instrument atomic force microscope observing samples surface topography, measure surface roughness.
TEM photo among Fig. 3 (a) shows, the obstruct of the SiGe layer that the propagation of dislocation is inserted, tangible dislocation deviation and gathering are arranged on the SiGe bed boundary, SiGe layer that this explanation is inserted can effectively play the effect on dislocation barrier layer, thereby makes the dislocation of bottom reduce the influence of top graded bedding quality.What Fig. 3 (b) provided is the interface composition distribution map that is obtained by EELS, and the content gradually variational speed that can judge this graded bedding thus is approximately 15%/μ m, and the Ge component of uppermost even relaxed layer is approximately 27.5%.This extension speed is 1.5 times of traditional components graded buffer layer.
Fig. 4 (a) provides is sample with the surface topography of Schemmel solution corrosion after 2 minutes, and can roughly estimate dislocation density from wherein dislocation pit is 9 * 10
5/ cm
2About, this with in traditional content gradually variational layer, obtained quite, this explanation, the SiGe layer of insertion helps to reduce the density of screw dislocation really.Fig. 4 (b) and (c) be primary sample and at 800 ℃ of following annealing surface atom force microscope photos after 1 hour, the surface roughness of the two is respectively about 11.6nm and 11.1nm, and so little difference shows that the conforming layer of primary sample upper space has reached very large relaxivity.
Fig. 5 (a) provides a conduct representative in the resulting Raman spectrum, Ge-Ge, and Si-Ge and Si-Si vibration peak are high-visible.According to three's peak position, can calculate the Ge component and be approximately 29%, relaxivity about 90%.What Fig. 5 (b) provided is under the line sweep situation, and Si-Si and Si-Ge peak position are very little with the variation that diverse location produces, this explanation relaxation degree basically identical everywhere.The SiGe layer that so high relaxivity proof is inserted can stop the accumulation of bottom strain toward top really.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. SiGe relaxation backing material, it is characterized in that, this SiGe relaxation backing material by the Si substrate and on the Si substrate epitaxially grown SiGe content gradually variational resilient coating constitute, and in described SiGe content gradually variational resilient coating, be inserted with n no strain SiGe separator, described no strain SiGe separator is divided into the n+1 layer with SiGe content gradually variational resilient coating, and n is a natural number.
2. SiGe relaxation backing material according to claim 1 is characterized in that, in described SiGe content gradually variational resilient coating, along with the increase of SiGe content gradually variational buffer layer thickness, the ratio of component of Si and Ge reduces gradually.
3. SiGe relaxation backing material according to claim 1 is characterized in that, the Ge constituent content is lower than Ge constituent content in the SiGe content gradually variational resilient coating of described no strain SiGe separator insert division in the described no strain SiGe separator.
4. SiGe relaxation backing material according to claim 1, it is characterized in that, the superiors that described SiGe content gradually variational resilient coating is not had the division of strain SiGe separator have enough little content gradually variational speed, and the content gradually variational speed that layer more down has is big more.
5. SiGe relaxation backing material according to claim 1 is characterized in that, described molecular beam epitaxy MBE or the high vacuum chemical vapor deposition UHV/CVD epitaxy method of adopting during epitaxial growth SiGe content gradually variational resilient coating on the Si substrate carries out.
6. the preparation method of a SiGe relaxation backing material is characterized in that, this method may further comprise the steps:
Regulate the ratio between silicon source and the germanium source, with ε '
1Content gradually variational speed epitaxial growth Ge component changes to x from 0 on the pretreated Si sheet having carried out
1SiGe content gradually variational resilient coating; Ge component in growth is x then
1SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
1First SiGe separator; Then with ε '
2Content gradually variational speed on first SiGe separator of growth growth Ge component from X
1Change to x
2SiGe content gradually variational resilient coating; Ge component in growth is x then
2SiGe content gradually variational resilient coating on epitaxial growth Ge component be X
2Second SiGe separator; And the like, until with ε '
nContent gradually variational speed grown the Ge component from X
nChange to x
fSiGe content gradually variational resilient coating, obtain SiGe relaxation backing material; Wherein, described ε '
n≤ ε '
N-1≤ ...≤ε '
2≤ ε '
1
7. the preparation method of SiGe relaxation backing material according to claim 6 is characterized in that, this method is in the ratio of regulating between silicon source and the germanium source, with ε '
1Content gradually variational speed epitaxial growth Ge component change to x from 0
1SiGe content gradually variational resilient coating before further comprise:
Silicon chip as backing material is carried out preliminary treatment, specifically comprise cleaning, drying, deoxidation.
8. the preparation method of SiGe relaxation backing material according to claim 6 is characterized in that, described epitaxial growth method comprises molecular beam epitaxy MBE or high vacuum chemical vapor deposition UHV/CVD.
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2006
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| CN102859653A (en) * | 2010-04-28 | 2013-01-02 | 日本碍子株式会社 | Epitaxial substrate and method for producing epitaxial substrate |
| US8946723B2 (en) | 2010-04-28 | 2015-02-03 | Ngk Insulators, Ltd. | Epitaxial substrate and method for manufacturing epitaxial substrate |
| CN103026561A (en) * | 2010-05-28 | 2013-04-03 | 康宁股份有限公司 | Gan-based laser diodes with misfit dislocations displaced from the active region |
| CN103026561B (en) * | 2010-05-28 | 2015-07-08 | 康宁股份有限公司 | Gan-based laser diodes with misfit dislocations displaced from the active region |
| CN107316802A (en) * | 2017-06-26 | 2017-11-03 | 南京大学 | A kind of low-temperature epitaxy preparation method of high Ge content germanium-silicon thin membrane |
| CN107316802B (en) * | 2017-06-26 | 2020-04-28 | 南京大学 | Low-temperature epitaxial preparation method of germanium-silicon thin film with high germanium content |
| CN109887847A (en) * | 2019-03-08 | 2019-06-14 | 中国科学院微电子研究所 | Semiconductor structure and its production method |
| CN109950153A (en) * | 2019-03-08 | 2019-06-28 | 中国科学院微电子研究所 | Semiconductor structure and its production method |
| CN109950153B (en) * | 2019-03-08 | 2022-03-04 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
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