CN101206914A - Information storage devices using magnetic domain wall movement and methods of manufacturing the same - Google Patents

Information storage devices using magnetic domain wall movement and methods of manufacturing the same Download PDF

Info

Publication number
CN101206914A
CN101206914A CNA2007101597749A CN200710159774A CN101206914A CN 101206914 A CN101206914 A CN 101206914A CN A2007101597749 A CNA2007101597749 A CN A2007101597749A CN 200710159774 A CN200710159774 A CN 200710159774A CN 101206914 A CN101206914 A CN 101206914A
Authority
CN
China
Prior art keywords
magnetosphere
information
storing device
groove
information stores
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007101597749A
Other languages
Chinese (zh)
Other versions
CN101206914B (en
Inventor
林志庆
赵恩亨
左圣熏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101206914A publication Critical patent/CN101206914A/en
Application granted granted Critical
Publication of CN101206914B publication Critical patent/CN101206914B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)

Abstract

An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.

Description

Utilize the information-storing device and the manufacture method thereof that move of neticdomain wall
Technical field
The present invention relates to a kind of information-storing device that moves of neticdomain wall and manufacture method of this device utilized.
Background technology
Traditional hard disk drive (HDD) is can be by the disc type magnetic recording media and by making read/write head move the device of reading writing information along magnetic recording media.Traditional HDD can store 100 GB (GB) or more multidata nonvolatile data storage, and it is used as the main memory storage of computing machine.
But, the traditional sizable movable machinery of the HDD amount of comprising system (moving mechanicalsystem).When HDD was moved and/or be subjected to jerk, these mechanical systems can break down.As a result, the movability of traditional HDD and/or reliability reduce.Mechanical system also can increase the complicacy of manufacturing, the cost that improves HDD, increase power consumption and/or produce noise.For example, along with the size of HDD reduces, the complexity of manufacturing and/or cost can increase.
As the traditional HDD of another kind, can use the data storage device of the neticdomain wall principle of utilizing magnetic material.Below, will the magnetic domain and the neticdomain wall of magnetic material be described, will describe then the information-storing device that moves that utilizes neticdomain wall.
The magnetic microcell (magnetic minute region) that constitutes magnet is known as magnetic domain.In magnetic domain, the direction of magnetic moment is consistent.Can control the size and the direction of magnetization of magnetic domain by character, shape and the size of external energy and magnetic material.
Neticdomain wall is the border that has between the magnetic domain of different direction of magnetization, and can move by the electric current or the magnetic field that are applied to magnetic material.For example, a plurality of magnetic domains with given direction of magnetization can be formed in the magnetosphere with given width and thickness, and magnetic domain and neticdomain wall can move by electric current or magnetic field that utilization has suitable intensity.
The principle that using magnetic domain wall moves in information-storing device can be rotated read/write head and recording medium reads or writes data.Utilize the traditional information-storing device that moves of neticdomain wall can not comprise the movable machinery system, therefore, it can have mobility, reliability and/or the low-power consumption of raising.
Summary of the invention
Exemplary embodiment relates to information-storing device, for example, utilizes the information-storing device that moves of neticdomain wall, and the method for making this device.
Exemplary embodiment provides the information-storing device that moves that utilizes neticdomain wall, for example has can store relative lot of data and without the information-storing device of the structure of movable machinery system.Exemplary embodiment can have improved mobility and/or reliability.Exemplary embodiment also provides the method for manufacturing information memory storage.
Utilize at least one exemplary embodiment of the information-storing device that moves of neticdomain wall can comprise the magnetosphere of writing with neticdomain wall.At least one stacked structure can comprise that at least one connects magnetosphere and at least one information stores magnetosphere.Described at least one connection magnetosphere and described at least one information stores magnetosphere can be stacked successively.Described at least one stacked structure can be formed on to be write on the magnetosphere.Reader can read the information that is stored in the information stores magnetosphere.
According at least some exemplary embodiments, write magnetosphere and the information stores magnetosphere can be strip, and write magnetosphere can perpendicular to or be parallel to the information stores magnetosphere.A plurality of stacked structures can form so that write along writing magnetosphere.A plurality of stacked structures can be along forming perpendicular to the direction of writing magnetosphere.
According at least some exemplary embodiments, the length of each of described a plurality of information stores magnetospheres can not wait.For example, the length of information stores magnetosphere can reduce gradually towards the magnetosphere of writing in the stacked structure.
According at least some exemplary embodiments, the magnetic anisotropy of writing magnetosphere can be about 2 * 10 3To about 10 7J/m 3, comprise two end points of this numerical range.Writing magnetosphere can be formed by CoPt, FePt or their alloy etc.The magnetic anisotropy that connects magnetosphere can be about 10 to about 10 3J/m 3, comprise two end points of this numerical range.Connecting magnetosphere can be by a kind of formation the in Ni, Co, NiCo, NiFe, CoFe, CoZrNb, CoZrCr, their alloy etc.The magnetic anisotropy of information stores magnetosphere can be about 2 * 10 3To about 10 7J/m 3, comprise two end points of this numerical range.The information stores magnetosphere can be formed by CoPt, FePt or their alloy etc.
According at least some exemplary embodiments, the magnetic anisotropy energy information stores magnetosphere and first district that is connected magnetosphere contact can be less than the magnetic anisotropy energy in second district of information stores magnetosphere.Second district can be the remainder except that first district of information stores magnetosphere.The magnetic anisotropy in first district can (K1) can satisfy: about 0≤K1≤about 10 7J/m 3, the magnetic anisotropy in second district can (K2) can satisfy about 2 * 10 3≤ K2≤about 10 7J/m 3First district can be doped with foreign ion, for example, and He +, Ga +Deng at least a.
According at least some exemplary embodiments, reader can be formed in the (CPP) magnetoresistive sensor on that writes in magnetosphere and described at least one information stores magnetosphere.Write middle part or end that magnetosphere can be disposed in described at least one stacked structure.
At least one other exemplary embodiment provides a kind of method of manufacturing information memory storage.According to this exemplary embodiment at least, writing magnetosphere can be formed in the substrate.First insulation course can be formed in the substrate and write magnetosphere with covering.First insulation course can be patterned, and exposes first opening portion of writing magnetosphere to form; The first connection magnetosphere and first information storage magnetosphere can be formed in first opening portion successively.
According at least some exemplary embodiments, first opening portion can comprise first groove and second groove.First groove can be formed in second groove, and therefore, it can have the width less than the width of second groove.First opening portion can form by utilizing the nano-imprint method.First magnetosphere that is used for connecting can be formed on first groove.First information storage magnetosphere can be formed in second groove.
According at least some exemplary embodiments, connect after magnetosphere and first information storage magnetosphere be formed in first opening portion successively first, second insulation course can be formed on the first information storage magnetosphere and first insulation course.Second insulation course can be patterned second opening portion that exposes first information storage magnetosphere to form.The second connection magnetosphere and the second information stores magnetosphere can be formed in second opening portion successively.
According at least some exemplary embodiments, before forming the second connection magnetosphere and the second information stores magnetosphere, but store magnetosphere impurity ion by the first information that second opening portion exposes.Described foreign ion can comprise He +And Ga +At least a.Second opening portion can comprise the 3rd groove and the 4th groove.The 3rd groove can be formed in the 4th groove, and therefore, it can have the width less than the width of the 4th groove.Second opening portion can form by utilizing the nano-imprint method.Second connects magnetosphere can be formed in the 3rd groove.The second information stores magnetosphere can be formed in the 4th groove.
Description of drawings
By the detailed description that the exemplary embodiment that shows in the accompanying drawing is carried out, described exemplary embodiment will become apparent, wherein:
Figure 1A and Figure 1B are respectively according to the skeleton view of the information-storing device of exemplary embodiment and side view;
Fig. 2 is the skeleton view that shows according to the information-storing device that moves that utilizes neticdomain wall of another exemplary embodiment;
Fig. 3 A to Fig. 3 E is the skeleton view of exemplary write operation of the information-storing device of displayed map 1;
Fig. 4 A to Fig. 4 J shows to come the sectional view of the method for manufacturing information memory storage according to exemplary embodiment.
Embodiment
Now, describe various exemplary embodiment of the present invention with reference to the accompanying drawings more up hill and dale, shown exemplary embodiments more of the present invention in the accompanying drawings.For the sake of clarity, in the accompanying drawings, the thickness in layer and zone is extended.
Detailed illustrative embodiment of the present invention is disclosed at this.But specific 26S Proteasome Structure and Function disclosed herein is just in order to describe the representative of exemplary embodiment of the present invention.But the present invention can realize and should not be constructed to be limited to embodiment set forth herein according to many other interchangeable forms.
Therefore, though exemplary embodiment of the present invention can adapt to various modifications and replacement form, embodiment shows by the example in the accompanying drawing and will be described in detail at this.But, it should be understood that to be not intended to exemplary embodiment of the present invention is limited to particular form disclosed herein that on the contrary, exemplary embodiment of the present invention covers all modifications, equivalent and the replacement that falls within the scope of the present invention.In the description to accompanying drawing, identical label refers to components identical all the time.
Should be appreciated that, though first, second grade of term can use describing various elements at this,, these elements are not limited by these terms should.These terms only are to be used for an element and another element region are separated.For example, first element can be named as second element, and similarly, second element also can be named as first element, and can not break away from the scope of exemplary embodiment of the present invention.Picture here uses, term " and/or " comprise relevant one or more any one and all combinations of listing in the item.
Should be appreciated that when element was known as on " being connected to " or " being attached to " another element, this element can directly connect or be attached on another element, perhaps can have intermediary element.On the contrary, when element is known as on " being directly connected to " or " directly being attached to " another element, there is not intermediary element.Other word that is used to describe the relation between the element should make an explanation according to identical mode (for example, " and ... between " with " and directly exist ... between ", " adjacent " and " direct neighbor " etc.).
Should be appreciated that when an element or layer were known as " being formed on " another element or layer and go up, this element or layer can be formed on another element or the layer directly or indirectly.That is to say, for example, can have intermediary element or layer.On the contrary, when an element or layer are known as " being formed directly into " another element or layer and go up, there are not intermediary element or layer.Other word that is used to describe the relation between the element should make an explanation according to identical mode (for example, " and ... between " with " and directly exist ... between ", " adjacent " and " direct neighbor " etc.).
Term just is used to describe certain embodiments as used herein, and is not intended to limit exemplary embodiment of the present invention.Just as used herein, unless context clearly indicates in addition, otherwise singulative " ", " a kind of " intention also comprise plural form.Should also be appreciated that term used herein " comprises " having specified exists cited feature, composition, step, operation, element and/or assembly, but does not get rid of the existence or the increase of one or more further features, composition, step, operation, element and/or assembly.
Should also be noted that at some and replace in the embodiment that function/action can be carried out not according to the order of representing in the accompanying drawing.For example, in fact two figure that show can carry out substantially simultaneously continuously, and perhaps reversible order is carried out sometimes, and this depends on the function/action that comprises.
Figure 1A and Figure 1B are respectively the skeleton view and the side views of the information-storing device that moves that utilizes neticdomain wall (below, be called first information memory storage) according to an exemplary embodiment.
With reference to Figure 1A, first information memory storage can comprise writes magnetosphere 100 and one deck (for example, multilayer) information stores magnetosphere 300 at least.Information stores magnetosphere 300 can with write magnetosphere 100 and intersect and can have sandwich construction.Writing magnetosphere 100 can be used for writing and can have the neticdomain wall mobility.Be used for writing a plurality of connection magnetospheres 200 that magnetosphere 100 is connected with information stores magnetosphere 300 and can be formed on and write between magnetosphere 100 and the information stores magnetosphere 300, and between each information stores magnetosphere 300.The reader 400 that is used for reading the information that is stored in information stores magnetosphere 300 can be formed on the given area of information stores magnetosphere 300.Reader 400 can be a (CPP) magnetoresistive sensor, for example, and known tunnel magnetoresistance (TMR) sensor, giant magnetoresistance (GMR) sensor etc.Reader 400 can be formed under the information stores magnetosphere 300.On the other hand, (CPP) magnetoresistive sensor 400 can be formed on write on the magnetosphere 100 or under.
According at least some exemplary embodiments, the length of information stores magnetosphere 300 can be downwards (for example, from reader 400 to writing magnetosphere 100) reduce, and the lead (not shown) that is connected to the drive unit (not shown) can be formed on the below at the two ends of information stores magnetosphere 300.In at least one exemplary embodiment, the length of information stores magnetosphere 300 can reduce downwards gradually.
Write magnetosphere 100 and can be the ferromagnetic layer that forms by CoPt, FePt, their alloy etc.The magnetic anisotropy of writing magnetosphere 100 can be about 2 * 10 3To about 10 7J/m 3, comprise two end points of this numerical range.Connect magnetosphere 200 and can be by a kind of soft magnetosphere that forms in Ni, Co, NiCo, NiFe, CoFe, CoZrNb, CoZrCr, their alloy etc., and its magnetic anisotropy can be about 10 to about 10 3J/m 3, comprise two end points of this numerical range.Information stores magnetosphere 300 can comprise the first district A and the second district B.The first district A can be the zone that 300 contacts of information stores magnetosphere connect magnetosphere 200.The magnetic anisotropy energy of the first district A can be less than the magnetic anisotropy energy of the second district B.
Another kind of scheme is that according at least some exemplary embodiments of the present invention, information stores magnetosphere 300 can all have equal magnetic anisotropy energy everywhere.The magnetic anisotropy of the first district A can be about 0≤K1≤about 10 by K1 7J/m 3, and the magnetic anisotropy of the second district B can be about 2 * 10 by K2 3≤ K2≤about 10 7J/m 3 Information stores magnetosphere 300 can be formed by alloy of CoPt, FePt and CoPt and FePt etc.The first district A can be doped with foreign ion, for example He +, Ga +Deng.Because foreign ion is doped among the first district A, therefore, the magnetic anisotropy of the first district A can become less than the magnetic anisotropy energy of the second district B.
With reference to Figure 1B, write magnetosphere 100 and can comprise at least two magnetic domains and at least one neticdomain wall.For example, write magnetosphere 100 and can comprise the first magnetic domain D1 to the, three magnetic domain D3, and the first neticdomain wall DW1 and the second neticdomain wall DW2.The first magnetic domain D1 to the, three magnetic domain D3 can be formed on according to various forms and write in the magnetosphere 100.In one example, soft magnetosphere can be formed on the center of ferromagnetic layer, and given external magnetic field can be applied to described ferromagnetic layer and soft magnetosphere.Described external magnetic field can with the different direction of magnetization of direction of magnetization of the ferromagnetic layer of soft magnetosphere both sides on magnetize soft magnetosphere.The first magnetic domain D1 to the, three magnetic domain D3 can form according to other suitable manner.
The two ends of magnetosphere 100 and middle part can be connected respectively to the first lead C1 to privates C3, to apply electric current.The first neticdomain wall DW1 or the second neticdomain wall DW2 can move according to the electric current that is applied to the electric current between the first lead C1 and the second lead C2 or be applied between the second lead C2 and the privates C3.For example, when from the first lead C1 when the second lead C2 applies electric current, the first neticdomain wall DWi can move towards the first lead C1.Because neticdomain wall moves along the direction of electron motion, so the moving direction of sense of current and neticdomain wall can be opposite.
The direction of magnetization that connects magnetosphere 200 can be according to the position change of the first neticdomain wall DW1 and the second neticdomain wall DW2.For example, the direction of magnetization of magnetosphere 200 can be followed the direction of magnetization of writing magnetosphere 100 that is in contact with it.This may be the soft magnetospheres with the direction of magnetization that is more prone to commutate because connect magnetosphere 200.When connecting the direction of magnetization commutation of magnetosphere 200, it is identical with the direction of magnetization that connects magnetosphere 200 or basic identical that the direction of magnetization of the first district A can become.This may because with when different direction of magnetization is magnetized, compare with the first district A when connecting magnetosphere 200, when connection magnetosphere 200 and the first district A when identical direction of magnetization is magnetized, energy state is more stable.This magnetized commutation can sequentially take place from the connection magnetosphere 200 of the superiors to the uppermost first district A.Can K1 during when the magnetic anisotropy of the first district A less than the magnetic anisotropy energy K2 of the second district B, the magnetized commutation of the first district A can be more prone to.
When the direction of magnetization of the first district A commutates and neticdomain wall moves a bit from the first district A towards the second district B as scheduled, data can be stored among the second district B.
Fig. 2 is the skeleton view that shows information-storing device according to another exemplary embodiment (below, be referred to as second information-storing device).Second information-storing device can be different from first information memory storage shown in Figure 1.Difference between the two can be information stores magnetosphere 300.First information memory storage can comprise the second district B in the both sides of the first district A, and second information-storing device can a side at the first district A comprise the second district B.In second information-storing device, the lead (not shown) can be formed under information stores magnetosphere 300 ends with supply of current.
Write magnetosphere 100 and information stores magnetosphere 300 can form abreast.At least in this exemplary embodiment, a plurality of stacked structures (comprise and connect magnetosphere 200 and information stores magnetosphere 300) also can be stacked in and write on the magnetosphere 100, and a plurality of magnetospheres 100 of writing can be positioned to more even, have interval expectation or given between the magnetosphere 100 a plurality of writing.The width of magnetosphere 100 can be approached or be approached substantially to write in described interval.
Fig. 3 A to Fig. 3 E is the skeleton view of demonstration according to the exemplary write operation of the first information memory storage of Fig. 1 of an exemplary real example.In Fig. 3 A to Fig. 3 E, for convenience of description, only shown the part of first information memory storage.
With reference to Fig. 3 A, write magnetosphere 100 the first magnetic domain D1, connect magnetosphere 200 and information stores magnetosphere 300 can be magnetized along first direction M1, and the second magnetic domain D2 that writes magnetosphere 100 can be magnetized along second direction M2.In Fig. 3 A, connect magnetosphere 200 and can comprise that the first connection magnetosphere 200a is connected magnetosphere 200b with second.Information stores magnetosphere 300 can comprise the first information storage magnetosphere 300a and the second information stores magnetosphere 300b.Privates C4 and the 5th lead C5 can be formed on each end of the first magnetosphere 300a, and the 6th lead C6 and the 7th lead C7 can be formed on the two ends of the second magnetosphere 300b.Label C1 and C2 represent to be respectively formed at the first end E1 that writes magnetosphere 100 and first lead and second lead of the second end E2.
The first information memory storage of Fig. 3 B displayed map 3A, wherein, the first neticdomain wall DW1 has moved.The first neticdomain wall DW1 can move by applying electric current from the first lead C1 to the second lead C2.With reference to Fig. 3 B, the second magnetic domain D2 may extend into the bottom of the first connection magnetosphere 200a, the result, and the direction of magnetization of the first connection magnetosphere 200a is capable of reversing, becomes second direction M2.The direction of magnetization of the first district A1 of the contact first connection magnetosphere 200a is also capable of reversing to be M2, and the commutation of this direction of magnetization can sequentially take place by the first district A2 from the first connection magnetosphere 200a to the second information stores magnetosphere 300b.According to above magnetized commutation, another magnetic domain (below, be referred to as the 4th magnetic domain D4) can be formed in the information stores magnetosphere 300.
With reference to Fig. 3 C, can apply electric current towards the second lead C2 from the 6th lead C6, to expand the 4th magnetic domain D4 among the second information stores magnetosphere 300b towards first end of the second information stores magnetosphere 300b.For example, the data corresponding to the 4th magnetic domain D4 can be 0.
With reference to Fig. 3 D, can apply electric current towards the first lead C1 from the second lead C2, so that the first neticdomain wall DW1 moves towards the second end E2 from the first end E1 of magnetosphere 100.Therefore, the first magnetic domain D1 can expand towards first bottom that connects magnetosphere 200a.According at least some exemplary embodiments, from the first district A2 of first connection magnetosphere 200a to the second information stores magnetosphere 300b, direction of magnetization is capable of reversing to be first direction M1.The magnetic domain that is formed among the first district A1 and the A2 can be known as the 5th magnetic domain D5.For example, the data corresponding to the 5th magnetic domain D5 can be 1.
With reference to Fig. 3 E, by applying electric current from the 6th lead C6 to the first lead C1, the 4th magnetic domain D4 and the 5th magnetic domain D5 can move 1 bit towards first end of the second information stores magnetosphere 300b.
As a result, can be stored among the second district B of the second information stores magnetosphere 300b corresponding to 0 and 1 data.Like this, binary data can be stored in the given or desired region of information stores magnetosphere 300.
In Fig. 3 A to Fig. 3 E, write magnetosphere 100, connection magnetosphere 200 and information stores magnetosphere 300 and can have perpendicular magnetic anisotropic.But above-mentioned exemplary write method also may be used on having writing magnetosphere 100, connecting magnetosphere 200 and information stores magnetosphere 300 of horizontal magnetic anisotropy.
As mentioned above, in the information-storing device of exemplary embodiment, can come record data by mobile neticdomain wall in writing magnetosphere 100 and information stores magnetosphere 300.Therefore, the exemplary embodiment of information-storing device can not need the movable machinery system.In addition, information-storing device can be as Figure 1A and how stacked information-storing device shown in Figure 2, therefore, can store a large amount of information and/or data.
According at least some exemplary embodiments, when the magnetic domain of having stored data moves to the bottom of (CPP) magnetoresistive sensor 400, and given when reading electric current and being applied to (CPP) magnetoresistive sensor 400, readable data.During read and/or write, a part of writing magnetosphere 100 or information stores magnetosphere 300 can be used as the buffer area of temporary transient storage data.
Below, description is utilized the exemplary embodiment of manufacture method of information-storing device of the motion of neticdomain wall.
Fig. 4 A to Fig. 4 J is the sectional view of demonstration according to the method for the manufacturing information memory storage of exemplary embodiment.
With reference to Fig. 4 A, write magnetosphere 100 and can be formed in the substrate 10.The magnetosphere 100 of writing among Fig. 4 A can be corresponding to the magnetosphere 100 of reference Figure 1A description.First insulation course 20 can be formed in the substrate 10 writes magnetosphere 100 with covering.First insulation course 20 can be a resin bed etc.
Having multistage (muti-step) structure first main pressing mold (master stamp) 50 can be disposed on first insulation course 20.The first main pressing mold 50 can utilize nanopatterning method (for example, E-light beam lithography etc.) manufactured and can be repeated to use.
With reference to Fig. 4 B, first insulation course 20 can utilize the first main pressing mold 50 to stamp with patterning first insulation course 20.
Shown in Fig. 4 C, the first main pressing mold 50 can be removed from first insulation course 20.With reference to Fig. 4 C, can handle by the stamp that utilizes the first main pressing mold 50 and form first opening portion 1.First opening portion 1 can expose a part of writing magnetosphere 100.First opening portion 1 can comprise the first groove H1 and the second groove H2.The first groove H1 can be formed among the second groove H2, and therefore, the width of the first groove H1 can be less than the width of the second groove H2.The part of first insulation course 20 can remain in the bottom of the first groove H1, and the described residual fraction of first insulation course 20 can be by utilizing reactive ion etching (RIE), plasma ashing removals such as (plasma ashing).
With reference to Fig. 4 D, first connects magnetosphere 200a can be formed among the first groove H1.First connects magnetosphere 200a can be corresponding to the connection magnetosphere 200 among Figure 1A.First connects magnetosphere 200a can utilize formation such as metallide (electrolysis plating) method.First thickness that connects magnetosphere 200a can be controlled according to reaction conditions in the metallide process and/or reaction time.Therefore, the height of the first connection magnetosphere 200a and the height of the first groove H1 can correspondingly be adjusted.Even when first height that connects the height of magnetosphere 200a and the first groove H1 did not wait, follow-up processing also can be carried out and/or install still and can be operated.
First information storage magnetosphere 300a can be formed among the second groove H2.First information storage magnetosphere 300a can be corresponding to the information stores magnetosphere 300 of reference Figure 1A description.First information storage magnetosphere 300a can be by utilizing spray method and coming to be connected deposition magnetosphere formation on the magnetosphere 200a and first insulation course 20 first carrying out chemically mechanical polishing (CMP) method on the magnetosphere.But, also can use other deposition and finishing method.
With reference to Fig. 4 E, second insulation course 30 can be formed on the first information storage magnetosphere 300a and first insulation course 20.Second insulation course 30 can use identical with the material that forms first insulation course 20 or essentially identical material to form.The second main pressing mold 60 with multilevel hierarchy can be set at second insulation course, 30 tops.
Shown in Fig. 4 F,, can utilize the second main pressing mold 60 to come to second insulation course, 30 patternings according to carrying out the similar or similar substantially mode of mode of patterning to utilizing 50 pairs first insulation courses of the first main pressing mold 20.After patterning, the second main pressing mold 60 can be removed.With reference to Fig. 4 F, at least one exemplary embodiment, can form second opening portion 2 by the method for utilizing the second main pressing mold 60 to stamp.Second opening portion 2 can expose the part of first information storage magnetosphere 300a.
With reference to Fig. 4 F, second opening portion 2 can comprise the 3rd groove H3 and the 4th groove H4.The 3rd groove H3 can be formed among the 4th groove H4, and therefore, the width of the 3rd groove H3 can be less than the width of the 4th groove H4.The big I of the 3rd groove H3 equals or equals substantially the size of the first groove H1 among Fig. 4 C, and the big I of the 4th groove H4 is greater than the size of the second groove H2 among Fig. 4 C.
With reference to Fig. 4 G, the first information storage magnetosphere 300a that exposes by second opening portion 2 can come the impurity ion by utilizing second insulation course 30 to implant mask as ion.Foreign ion can be He +, Ga +Deng.As magnetic material doping He +And Ga +During foreign ion, the magnetic anisotropy of magnetic material can reduce, and this is because foreign ion has reduced the magneto-coupling effect between the magnetic grain that constitutes magnetic material.The magnetic anisotropy of magnetic material can be decreased to about 0 according to the amount of mixing.In Fig. 4 G, A1 represents the part of the first magnetosphere 300a of impurity ion.In the exemplary embodiment, the impurity ion is optional.
With reference to Fig. 4 H, second connects magnetosphere 200b can be formed in second opening 2 according to the identical or essentially identical mode of generation type that is connected the magnetosphere 200a and first information storage magnetosphere 300a with first respectively with the second information stores magnetosphere 300b.
With reference to Fig. 4 I, the 3rd insulation course 40 can be formed on the second information stores magnetosphere 300b and second insulation course 30.The 3rd insulation course 40 can use identical or essentially identical material with the formation material of first insulation course 20 to form.Shown in Fig. 4 I, the 3rd insulation course 40 can be patterned according to the similar or similar substantially mode of the mode that is patterned to first insulation course 20 and second insulation course 30.Still with reference to Fig. 4 I, can form the 3rd opening portion 3.The 3rd opening portion 3 can expose the part of the second information stores magnetosphere 300b.The 3rd opening portion 3 can comprise the 5th groove H5 and the 6th groove H6.The 5th groove H5 can be formed among the 6th groove H6, and therefore, the width of the 5th groove H5 can be less than the width of the 6th groove H6.
With reference to Fig. 4 J, the second information stores magnetosphere 300b that exposes by the 3rd opening portion 3 can come the impurity ion by utilizing the 3rd insulation course 40 to implant mask as ion, and foreign ion can be He+, Ga+ etc.In Fig. 4 J, A2 represents that the second information stores magnetosphere 300b is doped with the part of foreign ion.In the exemplary embodiment, the impurity ion is optional.
Though in Fig. 4 J, do not demonstrate, can be connected magnetosphere and the 3rd information stores magnetosphere according in the 3rd opening, forming the 3rd respectively with the first identical or essentially identical mode of generation type that connects magnetosphere 200a and first information storage magnetosphere 300a.
Information-storing device with reference to Figure 1A has been discussed the exemplary embodiment of the manufacture method of information-storing device at this.But,, also can utilize similar or basic similar methods to make information-storing device shown in Figure 2 by changing the form of the first main pressing mold 50 and the second main pressing mold 60 and first opening portion 1 and second opening portion 2.
According at least some exemplary embodiments, can handle by the stamp of using multistage main pressing mold and form two grooves.Therefore, can utilize the manufacturing of negligible amounts to go on foot the information-storing device of making relatively high capacity more easily.
The exemplary embodiment of information-storing device can not comprise the movable machinery system, therefore, can have improved mobility, reliability and/or can store a large amount of relatively information.The exemplary embodiment of information-storing device also can be utilized the manufacturing step of negligible amounts and be manufactured more easily.
Though show and described the present invention with reference to exemplary embodiment, exemplary embodiment should be understood that to be descriptive and nonrestrictive purpose.For example, those skilled in the art should understand that can make of the present invention at the magnetosphere of writing, at the magnetosphere that connects and at the various changes of the position of the magnetosphere of canned data.Therefore, scope of the present invention be can't help detailed description of the present invention and is limited, and is defined by the claims.

Claims (35)

1. information-storing device comprises:
Write magnetosphere, have at least one neticdomain wall;
At least one stacked structure is formed on and writes on the magnetosphere, and each of described at least one stacked structure comprises that stacked successively at least one connects magnetosphere and at least one information stores magnetosphere;
Reader is used for reading the information that is stored in the information stores magnetosphere.
2. information-storing device as claimed in claim 1 wherein, is write magnetosphere and the information stores magnetosphere is a strip.
3. information-storing device as claimed in claim 1 wherein, is write magnetosphere and is arranged to perpendicular to the information stores magnetosphere.
4. information-storing device as claimed in claim 1 wherein, is write magnetosphere and is arranged to and is parallel to the information stores magnetosphere.
5. information-storing device as claimed in claim 1, wherein, described at least one stacked structure comprises and is formed on a plurality of stacked structures of writing on the magnetosphere.
6. information-storing device as claimed in claim 5, wherein, described at least one stacked structure comprises and replaces stacked a plurality of connection magnetospheres and a plurality of information stores magnetosphere.
7. information-storing device as claimed in claim 5, wherein, each of described at least one stacked structure all is arranged to perpendicular to writing magnetosphere.
8. information-storing device as claimed in claim 1, wherein, described at least one stacked structure comprises and replaces stacked a plurality of connection magnetospheres and a plurality of information stores magnetosphere that each of a plurality of information stores magnetospheres has different length.
9. information-storing device as claimed in claim 8, wherein, the length of uppermost information stores magnetosphere is greater than at least one other layer of described a plurality of information stores magnetospheres in described a plurality of magnetospheres.
10. information-storing device as claimed in claim 9, wherein, the length of described a plurality of information stores magnetospheres reduces towards writing magnetosphere gradually from uppermost information stores magnetosphere.
11. information-storing device as claimed in claim 1, wherein, the magnetic anisotropy of writing magnetosphere can be 2 * 10 3To 10 7J/m 3, comprise two end points of this numerical range.
12. information-storing device as claimed in claim 1 wherein, is write magnetosphere and is formed by CoPt, FePt or their alloy.
13. information-storing device as claimed in claim 1, wherein, the magnetic anisotropy that connects magnetosphere can be 10 to 10 3J/m 3, comprise two end points of this numerical range.
14. information-storing device as claimed in claim 1 wherein, connects magnetosphere by a kind of formation the in Ni, Co, NiCo, NiFe, CoFe, CoZrNb, CoZrCr and their alloy.
15. information-storing device as claimed in claim 1, wherein, the magnetic anisotropy of information stores magnetosphere can be 2 * 10 3To 10 7J/m 3, comprise two end points of this numerical range.
16. information-storing device as claimed in claim 1, wherein, the information stores magnetosphere is formed by CoPt, FePt or their alloy.
17. information-storing device as claimed in claim 1, wherein, the magnetic anisotropy in first district of information stores magnetosphere can be less than the magnetic anisotropy energy in second district of information stores magnetosphere, wherein, first district contacts with being connected magnetosphere, and second district is the remainder except that first district of information stores magnetosphere.
18. information-storing device as claimed in claim 17, wherein, the magnetic anisotropy in first district can satisfy 0≤K1≤10 by K1 7J/m 3, the magnetic anisotropy in second district can satisfy 2 * 10 by K2 3≤ K2≤10 7J/m 3
19. information-storing device as claimed in claim 17, wherein, first district is doped with foreign ion.
20. information-storing device as claimed in claim 19, wherein, foreign ion comprises He +And Ga +At least a.
21. information-storing device as claimed in claim 1, wherein, reader is formed in the (CPP) magnetoresistive sensor on that writes in magnetosphere and described at least one information stores magnetosphere.
22. information-storing device as claimed in claim 1 wherein, is write the end that magnetosphere is disposed in described at least one stacked structure.
23. information-storing device as claimed in claim 1 wherein, is write the middle part that magnetosphere is disposed in described at least one stacked structure.
24. the method for a manufacturing information memory storage, described method comprises:
In substrate, form and write magnetosphere;
Form first insulation course in substrate, first insulation course covers writes magnetosphere;
Patterning first insulation course exposes first opening portion of writing magnetosphere to form;
In first opening portion, form first successively and connect magnetosphere and first information storage magnetosphere.
25. method as claimed in claim 24, wherein, first opening portion comprises first groove and second groove, and first groove is formed in second groove, and the width of first groove is less than the width of second groove.
26. method as claimed in claim 24, wherein, first opening portion forms by utilizing the nano-imprint method.
27. method as claimed in claim 25, wherein, first connects magnetosphere is formed in first groove.
28. method as claimed in claim 25, wherein, first information storage magnetosphere is formed in second groove.
29. method as claimed in claim 24 also comprises:
On the first information storage magnetosphere and first insulation course, form second insulation course;
Patterning second insulation course is to form second opening that exposes first information storage magnetosphere;
In second opening, form second successively and connect the magnetosphere and the second information stores magnetosphere.
30. method as claimed in claim 29 also comprises:
The first information storage magnetosphere that mixes and expose by second opening portion.
31. method as claimed in claim 30, wherein, first information storage magnetosphere is doped with and comprises He +And Ga +At least a foreign ion.
32. method as claimed in claim 29, wherein, second opening portion comprises the 3rd groove and the 4th groove, and the 3rd groove is formed in the 4th groove, and the width of the 3rd groove is less than the width of the 4th groove.
33. method as claimed in claim 29, wherein, second opening portion forms by utilizing the nano-imprint method.
34. method as claimed in claim 32, wherein, second connects magnetosphere is formed in the 3rd groove.
35. method as claimed in claim 32, wherein, the second information stores magnetosphere is formed in the 4th groove.
CN2007101597749A 2006-12-22 2007-12-21 Information storage devices using magnetic domain wall movement and methods of manufacturing the same Active CN101206914B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020060133095A KR100846509B1 (en) 2006-12-22 2006-12-22 Information storage device using magnetic domain wall moving and method of manufacturing the same
KR1020060133095 2006-12-22
KR10-2006-0133095 2006-12-22

Publications (2)

Publication Number Publication Date
CN101206914A true CN101206914A (en) 2008-06-25
CN101206914B CN101206914B (en) 2012-11-28

Family

ID=39567018

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101597749A Active CN101206914B (en) 2006-12-22 2007-12-21 Information storage devices using magnetic domain wall movement and methods of manufacturing the same

Country Status (3)

Country Link
JP (1) JP5172317B2 (en)
KR (1) KR100846509B1 (en)
CN (1) CN101206914B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211652B (en) * 2006-12-29 2011-11-30 三星电子株式会社 Information storage devices using magnetic domain wall movement and methods of manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100907471B1 (en) * 2007-12-06 2009-07-13 고려대학교 산학협력단 Nano wire and Memory device according to current-induced domain wall displacement using it
JP6406791B2 (en) 2017-01-18 2018-10-17 株式会社シマノ Surface decoration structure with silver mirror film layer and method for forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133529A (en) * 2001-10-24 2003-05-09 Sony Corp Information memory and manufacturing method therefor
US6635546B1 (en) * 2002-05-16 2003-10-21 Infineon Technologies Ag Method and manufacturing MRAM offset cells in a damascene structure
JP2004259912A (en) 2003-02-26 2004-09-16 Sony Corp Magnetic memory device and its manufacturing method
US6970379B2 (en) 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
US6920062B2 (en) * 2003-10-14 2005-07-19 International Business Machines Corporation System and method for reading data stored on a magnetic shift register
JP2006005308A (en) 2004-06-21 2006-01-05 Victor Co Of Japan Ltd Non-volatile magnetic memory
US7242604B2 (en) * 2005-01-13 2007-07-10 International Business Machines Corporation Switchable element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211652B (en) * 2006-12-29 2011-11-30 三星电子株式会社 Information storage devices using magnetic domain wall movement and methods of manufacturing the same

Also Published As

Publication number Publication date
JP5172317B2 (en) 2013-03-27
KR20080058898A (en) 2008-06-26
JP2008172219A (en) 2008-07-24
KR100846509B1 (en) 2008-07-17
CN101206914B (en) 2012-11-28

Similar Documents

Publication Publication Date Title
US8339829B2 (en) Information storage devices using movement of magnetic domain walls and methods of manufacturing the same
CN101145571B (en) Memory device using magnetic domain wall moving
JP5311809B2 (en) Information storage device using domain wall motion, manufacturing method thereof and operation method thereof
CN101207176B (en) Information storage devices using movement of magnetic domain wall and methods of manufacturing the same
CN101217181B (en) Magnetic domain data storage devices and methods of manufacturing the same
EP1901305B1 (en) Memory device employing magnetic domain wall movement
US7961491B2 (en) Data storage device using magnetic domain wall movement and method of operating the same
US20100172169A1 (en) Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same
CN101211652B (en) Information storage devices using magnetic domain wall movement and methods of manufacturing the same
US7924594B2 (en) Data writing and reading method for memory device employing magnetic domain wall movement
CN101206914B (en) Information storage devices using magnetic domain wall movement and methods of manufacturing the same
KR101168284B1 (en) Information storage device using magnetic domain wall moving and method of manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant