CN101201328A - On-line detecting method for silicon slice pattern defect - Google Patents
On-line detecting method for silicon slice pattern defect Download PDFInfo
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- CN101201328A CN101201328A CNA2006101473277A CN200610147327A CN101201328A CN 101201328 A CN101201328 A CN 101201328A CN A2006101473277 A CNA2006101473277 A CN A2006101473277A CN 200610147327 A CN200610147327 A CN 200610147327A CN 101201328 A CN101201328 A CN 101201328A
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Abstract
The invention discloses an on-line detection method of defects of silicon wafer figures, which can detect the repetitive defects on each chip of a silicon wafer. The method adopts the following steps: the method of electron beam scanning is adopted to get the novel figures on the chip; the novel figures are contrasted with the figures of a mask board or a layout. The method is carried out easily; optimizes the conditions of the photolithographic process; eliminates the defects; and improves the yield.
Description
Technical field
The present invention relates to a kind of on-line detecting method for silicon slice pattern defect, relate in particular to a kind of defect online detection method on each chip of silicon chip, all repeating.
Background technology
At present, the method that generally all adopts the silicon chip adjacent chips to compare to the defects detection of silicon slice pattern in semiconductor fabrication process realizes, but when figure by photoetching process when mask plate is printed onto on the silicon chip, some violate the figure of design rule in the process window deficiency, can produce defective, because this defective can repeat on each chip of silicon chip, cause and adopt conventional detection can't check out this defective.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of on-line detecting method for silicon slice pattern defect, and the defective that repeats on can each the sheet chip to silicon chip detects.
For solving the problems of the technologies described above, the invention provides a kind of on-line detecting method for silicon slice pattern defect, comprising:
The method of employing electron beam scanning is obtained the layer pattern of working as on the chip;
Described figure when layer pattern and mask plate or domain is compared.
The present invention is owing to adopted technique scheme, has such beneficial effect, promptly by obtain the layer pattern of working as on the chip with the electron beam method for scanning, mask plate figure with domain figure or process OPC simulation compares then, thereby the defective that repeats on can each the sheet chip to silicon chip detects, and this method is easy to implement, and has optimized the photoetching process condition, eradicate defective, improved yield rate.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 be to a silicon chip chip adopt that the method for electron beam scanning obtains when the layer pattern synoptic diagram;
Fig. 2 is the mask plate pictorial diagram of silicon chip chip shown in Figure 1;
Fig. 3 is the synoptic diagram of mask plate figure shown in Figure 2 after the OPC simulation.
Embodiment
The method of the invention realizes by following steps:
At first, the method for employing electron beam scanning is obtained the layer pattern of working as on the chip.The mode that adopts electron beam scanning is because the scanning machine of general optical principle, no matter be bright field or details in a play not acted out on stage, but told through dialogues, all have very strong preceding layer pattern to disturb, this is for the figure that can not differentiate when layer signal and preceding layer signal, at all can't be effectively and mask plate or domain do comparison.
Then, the obtained figure when layer pattern and mask plate or domain is compared.If with domain figure figure as a comparison, because the figure after layer pattern might be the different layers stack of electron beam scanning gained, as can see the figure of Si-gate and the figure of active area simultaneously after the Si-gate etching, the domain figure that therefore at this moment just need choose after different layers superposes is used as comparative pattern.If with mask plate figure figure as a comparison, so because the existence of optical proximity effect, need at first to carry out OPC (optical proximity effect correction) simulation to described mask plate figure, and then with the figure after the simulation as a comparison figure come with scan after silicon slice pattern compare.
The effect of the method for the invention is described with a specific embodiment below.As shown in Figure 1, at first the method for a certain silicon chip chip employing electron beam scanning is obtained the layer pattern of working as on this chip, specifically as shown in Figure 1; Then, the mask plate figure (see figure 2) of this chip is carried out the OPC simulation remove optical proximity effect, the mask plate figure after the OPC simulation as shown in Figure 3.Fig. 3 and Fig. 1 are compared, can find out clearly that the place in Fig. 1 circle exists defective.
Claims (3)
1. an on-line detecting method for silicon slice pattern defect is characterized in that, comprising:
The method of employing electron beam scanning is obtained the layer pattern of working as on the chip;
Described figure when layer pattern and mask plate or domain is compared.
2. on-line detecting method for silicon slice pattern defect according to claim 1, it is characterized in that, when described figure when layer pattern and domain is compared, if described after layer pattern is different layers stack figure, then need to choose the domain figure figure as a comparison after different layers superposes.
3. on-line detecting method for silicon slice pattern defect according to claim 1 is characterized in that, when described figure when layer pattern and mask plate is compared, needs at first described mask plate figure to be carried out the OPC simulation, removes optical proximity effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101473277A CN101201328A (en) | 2006-12-15 | 2006-12-15 | On-line detecting method for silicon slice pattern defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101473277A CN101201328A (en) | 2006-12-15 | 2006-12-15 | On-line detecting method for silicon slice pattern defect |
Publications (1)
| Publication Number | Publication Date |
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| CN101201328A true CN101201328A (en) | 2008-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101473277A Pending CN101201328A (en) | 2006-12-15 | 2006-12-15 | On-line detecting method for silicon slice pattern defect |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881609A (en) * | 2012-09-17 | 2013-01-16 | 上海华力微电子有限公司 | Method for detecting repetitive defect and design weakness of multi-project wafer (MPW) product |
| CN104423142A (en) * | 2013-08-22 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Calibration data collection method and system for optical proximity correction model |
| CN110689477A (en) * | 2019-09-07 | 2020-01-14 | 创新奇智(重庆)科技有限公司 | Universal flaw image simulation method |
| CN113990770A (en) * | 2021-12-28 | 2022-01-28 | 晶芯成(北京)科技有限公司 | Wafer detection method and detection device |
-
2006
- 2006-12-15 CN CNA2006101473277A patent/CN101201328A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881609A (en) * | 2012-09-17 | 2013-01-16 | 上海华力微电子有限公司 | Method for detecting repetitive defect and design weakness of multi-project wafer (MPW) product |
| CN102881609B (en) * | 2012-09-17 | 2016-04-27 | 上海华力微电子有限公司 | Detect the method for MPW product repeated defects and design weakness |
| CN104423142A (en) * | 2013-08-22 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Calibration data collection method and system for optical proximity correction model |
| CN110689477A (en) * | 2019-09-07 | 2020-01-14 | 创新奇智(重庆)科技有限公司 | Universal flaw image simulation method |
| CN110689477B (en) * | 2019-09-07 | 2023-01-10 | 创新奇智(重庆)科技有限公司 | Universal flaw image simulation method |
| CN113990770A (en) * | 2021-12-28 | 2022-01-28 | 晶芯成(北京)科技有限公司 | Wafer detection method and detection device |
| CN113990770B (en) * | 2021-12-28 | 2022-03-22 | 晶芯成(北京)科技有限公司 | Wafer detection method and detection device |
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Open date: 20080618 |