CN101196593A - 光纤 - Google Patents
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Abstract
一种光纤,包括:纤芯,包括至少两种纤芯掺杂,并且该纤芯具有与光学外包层的折射率差Δn1;第一内包层,具有与外包层的折射率差Δn2;以及第二下陷型内包层,具有与所述外包层的折射率差Δn3,该折射率差Δn3小于-3×10-3。至少一种纤芯掺杂的径向浓度在整个纤芯区域上连续变化。相比标准传输光纤,本发明的光纤利用有限的光纤损耗同时获得降低的弯曲和微弯损耗以及高得多的布里渊阈值,而不改变光纤的光传输参数。
Description
技术领域
本发明涉及光纤传输领域,并且更具体地涉及具有由于受激布里渊散射(stimulated Brillouin scattering,SBS)引起的降低的损耗以及降低的弯曲和微弯损耗的光纤。
背景技术
光纤的折射率分布是作为光纤半径的函数的折射率值的图形表示。在标准方式中,横轴表示到光纤中心的距离r,而纵轴表示纤芯的折射率与光纤包层的折射率之间的差。因此,针对具有台阶、梯形、抛物线或三角形形状的图形表示,相应地将光纤折射率分布称为“台阶”、“梯形”、“抛物线”或“三角形”。这些曲线通常是光纤的理论形状或基准折射率分布的表示,光纤制造约束可能导致稍有差异的形状。
光纤典型地包括光学纤芯和光学包层,光学纤芯的功能是传输光信号并可能放大光信号,而光学包层的功能是把光信号限制在纤芯内。为此目的,纤芯的折射率nc和外包层的折射率ng总是nc>ng。如公知的那样,在单模光纤中光信号的传播分成在纤芯中的引导的主导模式和通过整个纤芯-包层中一定距离的引导的次要模式,其被称为包层模式。
光纤是现代通信***中的关键元件。运营商一直在关注着在限制光纤的老化和损耗同时,提高沿光纤传输的光功率。出于运销原因,运营商关注着减少不同类型的光纤的数目并且愿意使用相同类型的光纤作为馈线和终端光纤以及作为线路光纤。终端光纤需要具有低的弯曲灵敏度,因为它们通常在其安装中呈现小的弯曲半径,而馈线光纤需要具有降低的布里渊散射,因为它们将高输入功率分布到传输***。
如所知的,将这样的光纤用于通信应用的一个限制是布里渊散射(SBS)引起的损耗。SBS是构成光纤的玻璃基体的声子与光子的相互作用引起的光学非线性。SBS限制了光纤传输***的最大光功率通过量;当输入功率提高到高于已知的布里渊阈值时,可以沿着光纤传输的功率达到上限。对光纤的任何额外的输入功率由于与声子的相互作用而在后向方向上散射,而不是如较高的功率信号那样在前向发送方向上传播。因此,SBS如它被称为的那样降低了接收机处的信噪比并且可以使得发射机由于反射光的进入变得不稳定。而且,以越来越高的数据率在越来越长的距离上越来越多地使用光放大器、固态Nd:YAG激光器,共同作用导致加剧了SBS。
文献中建议的用于提高布里渊阈值的技术减小了SBS的不利影响,并且例如通过对源的光子能量谱或玻璃的光子能量谱进行扩展来降低相互作用的效率,从而提高了光纤的功率处理能力。自发布里渊谱宽度的扩展将提高布里渊阈值。这可以通过进行布里渊频率偏移以在光纤截面中或沿着光纤长度发生变化来实现。
EP-A-0839 770提出调整沿光纤的牵引张力以抑制SBS,而不会显著改变光纤损耗或色散因子。
JP-A-09-311231提出通过变化背景氟浓度来改变沿光纤(轴向)长度的折射率分布。
WO-A-2004/027941提出通过应用紫外线辐射或通过热处理来改变沿光纤长度的折射率分布。
JP-A-09-048629公开了一种光纤,包括纤芯区域,其中锗掺杂从中心部分向外周递减并且氟掺杂从外周向中心部分递减。由此均匀地调节光纤横截面中的玻璃粘性以防止在光纤牵引期间的残留应力。
JP-A-09-218319公开了一种具有降低的布里渊散射的光纤。纤芯直径在光纤的纵向发生变化,并且包括用以提高折射率和降低纵向声波的速度的第一掺杂、以及用于降低折射率和降低纵向声波的第二掺杂。
US-A-2002/0118935提出了一种围绕光学包层的不规则涂层,其在长度方向发生变化,以便改变声波的模式分布。
N.Yoshizawa等人于1993年在IEEE JLT,卷11,No 10,第1518-1522页中的“Stimulated Brillouin Scattering suppression bymeans of applying strain distribution to fiber with cabling”,提出将光纤绕着中心杆进行缠绕以引入应力来改变声子的能量分布。
改变沿光纤轴向的折射率以及紧密光纤缠绕的一些缺点包括:沿着光纤长度的不均匀的光纤特性(接头特性、拉曼增益、截止波长)、以及增大的影响光纤寿命的疲劳。
US-A-6542683提出通过提供一种光纤纤芯来扩展参与SBS光子的能量谱,该光纤纤芯包括交替的、改变掺杂的玻璃层,其导致不均匀的热膨胀和粘性分布,这在光纤截面中引起残留的永久非均匀应力。至少两层不同热膨胀系数(CTE)和粘性系数在光纤截面中产生应力变化,其接着产生布里渊频率移动变化,并且因此该模式的线宽增加。
交替层中的CTE和粘性控制难以实现,并且用以获得在纤芯内的掺杂层和非掺杂层的预制件的制造工艺需要昂贵的设备。而且,只要掺杂纤芯,光纤损耗都增大,尤其是当掺杂浓度具有锐变时。这样的锐变将在其界面引入硅网络缺陷(silica network defect),引起增大的光纤吸收损耗和降低的老化性能。
US-A-6587623提出控制声波以在光纤纤芯中很差地引导声波,从而降低光子-光子的交互作用,并且因此降低SBS影响。然而,这样的光纤难以获得,因为光纤折射率分布必须同时实现好的光引导和差的声引导。在优化SBS影响的工作中,可预料到光传输特性的缺陷。
J.Botineau等人于1995年11月9日在Electronics Letters,Vol.31,No.23中的“Effective stimulated Brillouin gain in single mode opticalfibers”中确定:相比于台阶折射率分布,梯形折射率分布光纤允许获得较高布里渊阈值。然而,对于特定的通信应用,梯形分布形状可能最适合的。
US-A-2004/0218882公开了一种具有高SBS阈值的光纤。纤芯包括具有特定掺杂方案的三个区域。然而,对于特定的通信应用,此文献中公开的光纤折射率分布不是最适合的。
针对不同制造商的光***之间的兼容性的需求,国际电信联盟(ITU)已经公开了称为ITU-T G.652的标准,标准单模光纤(SSMF)必须满足该标准。
该用于传输光纤的G.652标准特别推荐波长1310nm处的模场直径(MFD)的范围为[8.6-9.5μm];电缆布线(cabling)截止波长最大为1260nm;标为λ0的色散消除波长的范围为[1300-1324nm];色散斜率最大为0.092ps/nm2-km。常规地,电缆布线截止波长被测量为这样的波长,其中该波长的光信号在光纤上传播22米之后不再是单模的,例如由国际电工委员会的子委员会86A基于标准IEC60793-1-44所定义的那样。
提高SBS阈值的工作不应该导致超出G.652标准。
而且,传输光纤中的高光功率存在风险,会毁坏光纤涂层并且因此无论是否存在弯曲都加速光纤的老化。降低具有高布里渊阈值的光纤的弯曲灵敏度将降低高功率应用的老化问题。
另外,如上文指出的那样,运营商也愿意降低光纤的弯曲灵敏度,以便用作终端光纤。
用于降低损耗的典型解决方案是影响MAC值。对于给定的光纤,所谓的MAC值被定义为光纤在1550nm处的模场直径与有效截止波长λceff的比率。常规地,有效截止波长被测量为这样的波长,其中该波长的光信号在光纤上传播2米之后不再是单模的,例如由国际电工委员会的子委员会86A基于标准IEC 60793-1-44所定义的那样。MAC值被用于评价光纤性能,特别是用于找到模场直径、有效截止波长和弯曲损耗之间的折衷。
图1示出了申请人的实验结果,给出了在弯曲半径为15mm的情况下在波长1625nm处标准SSMF光纤中的弯曲损耗相对于波长1550nm处的MAC值的关系。可以看出MAC值影响光纤的弯曲损耗,并且通过降低MAC值可以降低这些弯曲损耗。
然而,通过降低模场直径和/或通过提高有效截止波长来降低MAC值可能导致超出G.652标准,使得光纤在商业上与一些传输***不兼容。
对于旨在针对单接入光纤的光纤应用而言,在降低弯曲损耗并提高SBS阈值的同时注意G.652标准是一个真正的挑战,其中该单接入光纤将被同时用在长距离传输***和光纤到户(FTTH)或光纤到路边(FTTC)***中。
S.Matsuo等人在OFC’04 Proceedings,paper TH13(2004)发表的“Bend-Insensitive and Low Splice-Loss Optical Fiber for IndoorWiring in FTTH”描述了针对单模光纤(SMF)的折射率分布,其能够降低弯曲损耗。然而,该光纤表现出的色散在10.2ps/nm-km与14.1ps/nm-km之间,其超出了G.652标准。
S.Matsuo等人于2005年5月在IEICE Trans.Electron.Vol.E88-C,No.5发表的“Low bending loss and low splice loss single mode fibersemploying a trench profile”描述了一种光纤,其具有中央纤芯、第一内包层和沟道。该文献中描述的一些光纤示例还满足G.652标准的准则。
I.Sakabe等人在53rd IWCS Proceedings,pp.112-118(2004)发表的“Enhanced Bending Loss Insensitive Fiber and New Cables for CWDMAccess Networks”提出减小模场直径以降低弯曲损耗。然而,该模场直径的减小导致超出了G.652标准。
K.Bandou等人在53rd IWCS Proceedings,pp.119-122(2004)发表的“Development of Premise Optical Wiring Components UsingHole-Assised Fiber”提出了一种孔助(hole assisted)光纤,其具有弯曲损耗降低的标准SSMF光纤的光学特性。制造所述光纤的成本和当前的高衰减水平(>0.25dB/km)使其难以在FTTH***中得到商业使用。
T.Yokokawa等人在53rd IWCS Proceedings,PP.150-155(2004)发表的“Ultra-Low Loss and Bend Insensitive Pure-Silica-Core FiberComplying with G.652 C/D and its Applications to a Loose Tube Cable”提出了一种纯二氧化硅芯光纤PSCF,其具有降低的传输损耗和弯曲损耗,但是减小的模场直径超出了G.652标准。
US-A-6771865描述了具有降低的弯曲损耗的传输光纤的折射率分布。该光纤具有纤芯、环形内包层和光学外包层。环形包层掺杂有锗和氟。该文献中给出的信息不能够确定该光纤是否满足G.652标准规定的准则。
US-A-4852968描述了具有降低的弯曲损耗的传输光纤的分布。然而,该光纤具有的色散不满足标准G.652的准则;G.652标准要求在1300nm与1324nm之间的波长处消除色散,但是在US 4852962中描述的光纤表明在1400nm与1800nm之间的波长处消除了色散。
WO-A-2004/092794描述了具有降低的弯曲损耗的传输光纤的折射率分布。该光纤具有中央纤芯、第一内包层、第二下陷型内包层和光学外包层。该文献中描述的一些光纤示例还满足G.652标准的准则。该文献中描述的光纤通过汽相轴向沉积(VAD)或化学汽相沉积(CVD)来制造。然而,该文献中描述的光纤没有提及微弯损耗和布里渊散射的问题。
因此,需要一种可能满足G.652标准的准则的传输光纤,即其可以在FTTH类型的传输***中得到商业使用,并且该光纤同时表现出降低的弯曲损耗和微弯损耗以及提高的受激布里渊散射阈值。这样的光纤可以用作单接入光纤,即用于长距离传输应用的线路光纤和FTTH应用中的馈线光纤或终端光纤。
因此,需要一种光纤,其具有降低的弯曲损耗和提高的布里渊阈值,而不改变光纤传输特性,即不改变光纤折射率分布并且只具有有限的光纤损耗增加。
发明内容
因此,本发明提出一种光纤,其包括:
纤芯,具有半径r1,包括至少两种纤芯掺杂,其中该纤芯具有与光学外包层的折射率差Δn1;
第一内包层,具有半径r2以及与外包层的折射率差Δn2;
第二下陷型内包层,具有半径r3以及与外包层的折射率差Δn3,该折射率差Δn3小于-3×10-3;
其中至少一种纤芯掺杂的径向浓度在整个纤芯区域上连续地变化。
根据实施例,本发明的光纤可以包括下述附加特征的一个或多个:
所述至少两种纤芯掺杂中的每一种的径向浓度在整个纤芯区域上连续地变化;
至少一种纤芯掺杂浓度的径向变化使得其一阶导数与光纤中传输的光信号的径向功率部分P(r)成比例;
光纤在波长1550nm处具有等于或大于100MHz的自发布里渊谱宽度;
至少一种纤芯掺杂浓度的变化对应于大于或等于1×10-3的折射率变化;
该至少两种纤芯掺杂从包括Ge、F、P、Al、Cl、B、N和碱金属的组中选择;
所述纤芯掺杂之一是锗(Ge),其浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在1wt%到20wt%的范围内;
所述纤芯掺杂之一是氟(F),其浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在0.3wt%到8wt%的范围内;
所述纤芯掺杂之一是磷(P),其浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在1wt%到10wt%的范围内;
该第二下陷型内包层包括锗,其径向浓度基于构成第二下陷型内包层的材料在所述径向浓度的半径上的总成分而在0.5wt%与7wt%之间;
该第二内包层与外包层的折射率差大于-15×10-3;
光纤在波长1550nm处具有的有效面积大于或等于50μm2;
光纤在波长1550nm处的衰减小于或等于0.3dB/km;
光纤在波长1625nm处具有的围绕15mm的弯曲半径绕10图的弯曲损耗等于或小于0.1dB,围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB,并且围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.5dB;
光纤在波长1550nm处具有的围绕15mm的弯曲半径绕10圈的弯曲损耗等于或小于0.02dB,围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.05dB,并且围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB;
直至波长1625nm,该光纤都具有由所谓的固定直径缆盘(fixeddiameter drum)方法所测量的等于或小于0.8dB/km的微弯损耗。
本发明还涉及光模块或存储盒,其包括容纳根据本发明的光纤的至少缠绕部分的外壳。
根据实施例,在本发明的光模块或存储盒中,以小于15mm或小于10mm的弯曲半径来缠绕光纤。
本发明还涉及光纤到户(FTTH)或光纤到路边(FTTC)光***,其包括根据本发明的至少一个光模块或至少一个存储盒。
附图说明
通过阅读本发明的实施例以及作为示例给出的描述并且参考附图,本发明的其他特性和优点将变得更清楚,在附图中:
图1是示出在弯曲半径为15mm的情况下在波长1625nm处标准SSMF光纤中的弯曲损耗相对于波长1550nm处的MAC值的关系的图示,在先前已经进行了描述;
图2是表示根据本发明的一个实施例的单模光纤的标称(nominal)分布的图示;
图3a是根据本发明的示例的光纤的基准折射率分布的图形表示;
图3b是图3a的光纤中锗掺杂浓度的图形表示;
图3c是图3a的光纤中氟掺杂浓度的图形表示;
图4是示出四种不同类型的光纤的色散特性的图示。
具体实施方式
本发明的光纤包括中央纤芯区域和包层区域,在中央纤芯区域中待传输的光信号被引导,包层区域用于将光信号限制在纤芯中。包层区域包括第一内包层、下陷型沟道(或第二下陷型内包层)和外包层。下陷型沟道与外包层的折射率差小于-3×10-3,并且可以达到-15×10-3。
根据本发明,光纤的纤芯区域包括至少两种掺杂,其浓度在纤芯区域的整个半径上连续发生变化。第一掺杂(锗)的变化由第二掺杂(氟)的变化来补偿,以得到纤芯区域的预定折射率分布。纤芯区域沿光纤纵向保持均匀,即在光纤的纵向上掺杂浓度是恒定的。光纤具有根据取决于应用的参数所限定的给定折射率分布,其中该参数即模场直径、色散参数、有效截止波长、有效面积。
光纤特别是光纤纤芯中径向上掺杂浓度的变化允许扩展布里渊谱并且由此提高布里渊阈值。平滑的掺杂变化保证了针对不同掺杂浓度的均匀模式功率重新分配,并且限制了光纤损耗。使用至少两种掺杂允许获得针对光纤的给定折射率分布,并且降低了SBS降低对光纤的其他光参数的影响,特别是对模场直径和色散参数的影响。这样的光纤的折射率分布满足先前定义的G.652标准。
参考图2,其示出了本发明的实施例的标称折射率分布,本发明的单模传输光纤包括:中央纤芯,其与外包层的折射率差为Δn1;第一内包层,其与外包层的折射率差为Δn2;以及下陷型沟道,其与外包层的折射率差为Δn3。纤芯的宽度由其半径r1限定,包层的宽度由其各自的外径r2和r3限定。
为了限定针对光纤的标称折射率分布,通常采用外包层的折射率作为基准。中央纤芯的折射率值和包层的折射率值被给定为折射率差Δn1 ,2,3。通常外包层由硅形成,但是可以对该外包层进行掺杂以便增大或减小其折射率,例如以便改变信号传播特性。
因此,可以使用积分来限定光纤的折射率分布的每个截面,其中该积分将折射率的变化与每个光纤截面的半径相关联。
因此可以针对光纤限定三个积分,其表示纤芯表面I1,第一内包层的表面12,和第二下陷型内包层的表面I3。表述“表面”不应从几何上进行解释,而是对应于考虑了两个维度的值。这三个积分可以表述如下:
下面的表1给出了半径和折射率差的极限值以及积分I1的极限值,要求这些极限值使得光纤表现出降低的弯曲损耗和微弯损耗,同时满足标准G.652针对传输光纤的光传输准则。表中给出的值是光纤的标称分布。
表1
r1(μm) | r2(μm) | r3(μm) | r1/r2 | Δn1(×10-3) | Δn2(×10-3) | Δn3(×10-3) | Δn1-Δn2(×10-3) | I1(μm×10-3) | |
最小 | 3.5 | 7.5 | 12.0 | 0.2 | 4.2 | -1.2 | -15 | 3.9 | 17 |
最大 | 4.5 | 14.5 | 25.0 | 0.5 | 6.2 | 1.2 | -3 | 5.9 | 24 |
中央纤芯的积分I1影响光纤中信号的基本传播模式的形状和大小。在17×10-3μm与24×10-3μm之间的中央纤芯的积分值使得特别可能维持与G.652标准兼容的模场直径。另外,下陷型沟道Δn3使得可能相对于标准SSMF光纤的损耗改善弯曲损耗和微弯损耗。
根据本发明,光纤的纤芯区域包括至少两种掺杂,其浓度在整个纤芯区域上连续发生变化,同时维持纤芯区域的预定折射率分布。这允许扩展布里渊谱并且由此提高布里渊阈值。因为掺杂浓度变化被补偿以保持预定的折射率分布,特别是在纤芯区域中,不会由于在纤芯中存在至少两种掺杂而危及标准G.652的光传播准则。而且,第一内包层(Δn2,r2)保证了光功率保持在纤芯区域中,而下陷型沟道(Δn3,r3)不影响光功率通过量。
对于在波长1550nm处传播的信号而言,本发明的光纤具有的自发布里渊谱宽度等于或大于100MHz。这样的扩展布里渊谱允许相对于标准单模光纤(SSMF)将布里渊阈值提高至少因子2(或对数等级中的3dB)。本发明的光纤获得比具有有限光纤损耗(在波长1550nm处小于0.3dB/km)的标准传输光纤高得多的布里渊阈值,而不显著改变光纤的光传输参数。
选择第一纤芯掺杂(例如锗)来获得光纤材料的密度和弹性的强烈而连续的变化。根据可能的实施例,第一掺杂浓度的径向分布Cd(r)可以根据下面的关系式使得其一阶导数与光纤中传输的光信号的径向功率部分P(r)成比例:
其中α是常数值。
该径向功率分量P(r)以瓦/米来表述,根据以下关系式,该径向功率分量P(r)的积分等于总传输功率P:
∫P(r)dr=P
根据可能的实施例,下陷型沟道可以包括一些锗,其重量浓度在0.5%与7%之间,并且优选地重量浓度在0.5%与1.5%之间,即使折射率需要小于-3×10-3。下陷型沟道中锗的存在改变了硅的粘性和所述包层的弹光(elasto-optical)系数,以便改善微弯灵敏度。
图3a至图3c示出了根据本发明的光纤的示例。
图3a至图3c的光纤具有纤芯台阶分布,其中纤芯具有给定的恒定折射率值,并且下陷型沟道通过中间内包层与纤芯分离。图3a示出了具有任意单位的折射率分布。
转到图3b和3c,光纤的纤芯区域包括:第一掺杂(锗(Ge)),已知用于提高硅的折射率值;第二掺杂(氟(F)),已知用于减小硅的折射率值。图3b至图3c示出了以wt%为单位的掺杂浓度。根据本发明,至少一种纤芯掺杂的浓度在整个纤芯区域上连续地发生变化。在图3的示例中,两种掺杂在整个纤芯区域上都连续地发生变化。使用至少两种掺杂保证了纤芯折射率分布被维持在标称分布,从而服从给定的光传输特性。确实,因为第二掺杂可以补偿第一掺杂浓度的变化引入的折射率变化,所以可以获得给定的折射率分布。
至少一种纤芯掺杂浓度的变化引入了光纤截面中的密度和弹性变化,其扩展了布里渊谱并且由此提高了布里渊阈值。纤芯掺杂浓度的变化应该足够大以引入充分的密度和弹性变化以便降低SBS。发明人已经确定:如果至少一种纤芯掺杂在整个纤芯区域上的浓度变化对应于大于或等于1×10-3的折射率变化,即在不由另一纤芯掺杂进行补偿的情况下该折射率变化将是由纤芯掺杂浓度变化引起的折射率变化,则可以获得满意的结果。
回到图3b至图3c,锗浓度从5.8wt%(重量百分比)到12wt%连续地发生变化;并且氟浓度从0.1wt%到1.7wt%连续地发生变化。
掺杂浓度的平滑而规则的变化保证了针对不同掺杂浓度的统一模式功率重新分配并且限制了光纤损耗。针对图3a至图3c中所示例的光纤而进行的仿真给出:在1550nm的信号波长处,自发布里渊谱宽度大于100MHz并且SBS阈值功率相比标准单模光纤提高了至少因子2,并且有限的瑞利损耗增加了约0.013dB/km。尽管具有该瑞利损耗增加,但是本发明的光纤仍保持G.652标准,遵从衰减损耗在1550nm处小于或等于0.3dB/km。
图3a至图3c是作为本发明的示例给出的。根据本发明,可以使用不同于锗(Ge)和氟(F)的其他掺杂来获得具有降低SBS的光纤。纤芯区域包括从包括Ge、F、P、Al、Cl、B、N和碱金属的组中选择的至少两种掺杂。只要所述纤芯掺杂之一是锗(Ge),浓度可以在1wt%到20wt%的范围内;只要所述纤芯掺杂之一是氟(F),浓度可以在0.3wt%到8wt%的范围内;只要所述纤芯掺杂之一是磷(P),浓度可以在1wt%到10wt%的范围内。
图3a至图3c的光纤还具有下陷型沟道,以便降低对光纤弯曲损耗的灵敏度。因此,本发明的光纤结合了低弯曲损耗和高布里渊阈值。
典型地,从上文提到的J.Botineau等人在Electronics Letters,1995年11月9日,Vol.31,No.23的出版物“Effective stimulated Brillouingain in single mode optical fibers”中的教导出发,本领域的普通技术人员将选择具有三角形形状或抛物线形状的折射率分布来提高布里渊阈值,并且将应用外沟道来降低弯曲损耗。然而,这两个特性的简单组合使得光纤难以实现G.652规范。
图4示出比较下述四种不同类型的折射率分布形状的图示:不带沟道的典型的台阶折射率分布(SSMF),在包层中带沟道的台阶纤芯折射率分布(图3a至图3c的光纤),在包层中带沟道的三角形纤芯折射率分布,以及在包层中带沟道的抛物线纤芯分布。对于每种分布类型,对具有不同纤芯直径和最大掺杂水平的大量折射率分布进行了仿真。
图4示出了零色散波长λ0和在零色散波长处的色散斜率。矩形表示G.652规范针对那些光特性的边界。省略了这样的光纤分布,其具有过高截止波长并且在1310nm处不符合要求的标称模场直径,从而不满足G.652规范。
图4示出向SSMF分布添加下陷型沟道已经在生产上稍微限制了分布灵活性,并且因此增大了光纤报废率。使用包层中带沟道的三角形纤芯折射率分布导致不满足G.652要求的光纤。包层中带沟道的抛物线纤芯折射率分布使得某些光纤满足G.652规范,但是容限区域非常窄并且可以预期有很多产品会报废。
相比标准传输光纤,本发明的光纤获得了降低的弯曲和微弯损耗以及高得多的布里渊阈值。本发明的光纤还可用于FTTH***的接收机模块或发射机模块,以便以降低的光损耗而将高功率信号输入到通信***或高比特率长距离传输光缆。本发明的光纤与商用***兼容,因为它满足标准G.652。
显然,本发明的光纤展现出:在波长1310nm处色散斜率等于或小于0.092ps/nm2-km;在1300与1324nm之间的波长处和等于或小于1260nm的电缆布线截止波长处消除色散。
本发明的光纤在波长1550nm处有效面积大于或等于50μm2,典型地是80μm2,并且1550nm处衰减小于或等于0.3dB/km。这样的光纤适合用于在通信***的数据传输。这样的光传输***可以包括:光发射机,其发射预定波长范围内的光信号;传输光纤,其是本发明的光纤;以及光接收机,其接收由于降低的SBS和有限的光纤损耗提高而具有改善的信噪比(SNR)的光信号。与现有技术的***相比,该光传输发射机可以输入较高功率的光信号到光纤;用于传输光纤的布里渊阈值功率相比SMF以至少因子2增加。
此外,本发明的光纤在波长1625nm处围绕15mm的弯曲半径绕10圈的弯曲损耗等于或小于0.1dB;围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB;并且围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.5dB。而且,本发明的光纤还在波长1550nm处围绕15mm的弯曲半径绕10圈的弯曲损耗等于或小于0.02dB;围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.05dB;并且围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB。而且,直至波长1625mm,本发明的光纤都表现出由所谓的固定直径缆盘方法所测量的等于或小于0.8dB/km的微弯损耗。这样的光纤适合于在用于FTTH或FTTC***的光模块或存储盒中实施。
Claims (29)
1.一种光纤,包括:
纤芯,具有半径r1,包括至少两种纤芯掺杂,其中所述纤芯具有与光学外包层的折射率差Δn1;
第一内包层,具有半径r2以及与所述外包层的折射率差Δn2;
第二下陷型内包层,具有半径r3以及与所述外包层的折射率差Δn3,该折射率差Δn3小于-3×10-3;
其中至少一种所述纤芯掺杂的径向浓度在整个纤芯区域上连续地变化。
2.根据权利要求1所述的光纤,其中所述至少两种纤芯掺杂中的每一种的径向浓度在整个纤芯区域上连续地变化。
3.根据权利要求1或2所述的光纤,其中至少一种纤芯掺杂浓度的径向变化使得其一阶导数与光纤中传输的光信号的径向功率部分P(r)成比例。
4.根据权利要求1到3中任意一项所述的光纤,其中所述光纤在波长1550nm处具有等于或大于100MHz的自发布里渊谱宽度。
5.根据权利要求1到4中任意一项所述的光纤,其中至少一种纤芯掺杂浓度的变化对应于大于或等于1×10-3的折射率变化。
6.根据权利要求1到5中任意一项所述的光纤,其中所述至少两种纤芯掺杂从包括Ge、F、P、Al、Cl、B、N和碱金属的组中选择。
7.根据权利要求1到6中任意一项所述的光纤,其中所述纤芯掺杂之一是锗(Ge),其径向浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在1wt%到20wt%的范围内变化。
8.根据权利要求1到7中任意一项所述的光纤,其中所述纤芯掺杂之一是氟(F),其径向浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在0.3wt%到8wt%的范围内变化。
9.根据权利要求1到8中任意一项所述的光纤,其中所述纤芯掺杂之一是磷(P),其径向浓度基于构成所述纤芯的材料在所述径向浓度的半径上的总成分而在1wt%到10wt%的范围内变化。
10.根据权利要求1到9中任意一项所述的光纤,其中所述第二下陷型内包层包括锗,其径向浓度基于构成所述第二下陷型内包层的材料在所述径向浓度的半径上的总成分而在0.5wt%与7wt%之间。
11.根据权利要求1到10中任意一项所述的光纤,其中所述第二内包层与所述外包层的折射率差Δn3大于-15×10-3。
12.根据权利要求1到11中任意一项所述的光纤,其在波长1550nm处具有的有效面积大于或等于50μm2。
13.根据权利要求1到12中任意一项所述的光纤,其在波长1550nm处的衰减小于或等于0.3dB/km。
14.根据权利要求1到13中任意一项所述的光纤,其在波长1625nm处具有的围绕15mm的弯曲半径绕10圈的弯曲损耗等于或小于0.1dB。
15.根据权利要求1到14中任意一项所述的光纤,其在波长1625nm处具有的围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB。
16.根据权利要求1到15中任意一项所述的光纤,其在波长1625nm处具有的围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.5dB。
17.根据权利要求1到16中任意一项所述的光纤,其在波长1550nm处具有的围绕15mm的弯曲半径绕10圈的弯曲损耗等于或小于0.02dB。
18.根据权利要求1到14中任意一项所述的光纤,其在波长1550nm处具有的围绕10mm的弯曲半径绕1圈的弯曲损耗等于或小于0.05dB。
19.根据权利要求1到15中任意一项所述的光纤,其在波长1550nm处具有的围绕7.5mm的弯曲半径绕1圈的弯曲损耗等于或小于0.2dB。
20.根据权利要求1到19中任意一项所述的光纤,直至波长1625nm,其都具有由所谓的固定直径缆盘方法所测量的等于或小于0.8dB/km的微弯损耗。
21.根据前述权利要求1-20中一项或多项所述的光纤,其中所述纤芯与所述外包层的折射率差Δn1为正,所述第一内包层与所述外包层的折射率差Δn2为正或为负,并且Δn1>Δn2。
22.根据权利要求21所述的光纤,其中:
r1大于或等于3.5μm,并且小于或等于4.5μm;
r2大于或等于7.5μm,并且小于或等于14.5μm;
r3大于或等于12.0μm,并且小于或等于25.0μm;
Δn1大于或等于4.2×10-3,并且小于或等于6.2×10-3;
Δn2大于或等于-1.2×10-3,并且小于或等于1.2×10-3;
Δn3大于或等于-15×10-3。
23.根据前述权利要求21-22中一项或多项所述的光纤,其中比率r1/r2大于或等于0.27并且小于或等于0.5。
24.根据前述权利要求21-23中一项或多项所述的光纤,其中积分I1的值
小于或等于24×10-3并且大于或等于17×10-3。
25.一种光模块,其包括外壳,所述外壳容纳根据权利要求1到24中任意一项所述的光纤的至少缠绕部分。
26.一种存储盒,其容纳根据权利要求1到24中任意一项所述的光纤的至少缠绕部分。
27.根据权利要求25所述的光模块或根据权利要求26所述的存储盒,其中所述光纤以小于15mm的弯曲半径进行缠绕。
28.根据权利要求25所述的光模块或根据权利要求26所述的存储盒,其中所述光纤以小于10mm的弯曲半径进行缠绕。
29.一种光纤到户(FTTH)或光纤到路边(FTTC)光***,其包括至少一个根据权利要求25-28中任意一项所述的光模块或存储盒。
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EP1930753B1 (en) | 2015-02-18 |
US20090263092A1 (en) | 2009-10-22 |
JP2008139887A (ja) | 2008-06-19 |
EP1930753A1 (en) | 2008-06-11 |
JP5425391B2 (ja) | 2014-02-26 |
DK1930753T3 (en) | 2015-03-30 |
US20080152288A1 (en) | 2008-06-26 |
US7894698B2 (en) | 2011-02-22 |
CN101196593B (zh) | 2012-09-19 |
US7555186B2 (en) | 2009-06-30 |
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