CN101187015A - Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field - Google Patents
Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field Download PDFInfo
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- CN101187015A CN101187015A CNA2007101502289A CN200710150228A CN101187015A CN 101187015 A CN101187015 A CN 101187015A CN A2007101502289 A CNA2007101502289 A CN A2007101502289A CN 200710150228 A CN200710150228 A CN 200710150228A CN 101187015 A CN101187015 A CN 101187015A
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Abstract
The invention discloses a special-shaped electrode capable of achieving large-area reaction chamber of VHF-PECVD with uniform electric fields. A power electrode plate of the invention is provided with a corresponding additional electrode plate at the position near a power feed-in port, the corresponding additional electrode plate is parallel with the horizontal surface of the power electrode plate of which the thickness is larger than the thickness of the additional electrode plate which is connected to the edge of a power electrode surface of the power electrode plate. The special-shaped electrode of the invention is capable of being employed in reaction chambers of PECVD of arbitrary excitation frequency and arbitrary area, which can change current distribution on the electrode surface by using the additional electrode of the electrode power feed-in port, thereby being capable of suppressing logarithm singular point effect of electric potential near the electrode feel-in port.
Description
[technical field]
The present invention relates to the technical field of the film transistor matrix in silicon-film solar-cell and the flat pannel display field, particularly a kind of big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field.
[background technology]
Existing in recent years report proof, application very high frequency(VHF) (VHF) technology can increase depositing of thin film speed to the method for PECVD, and result of study shows: VHF-PECVD is fit to the high speed deposition of microcrystalline silicon film and amorphous silicon membrane fully.Yet the applied research of VHF-PECVD is normally carried out in small size PECVD reaction chamber, thereby can not directly apply in the large-scale commercial production.Radio frequency condenser coupling parallel-plate electrode reaction chamber is widely used in the plasma reinforced chemical vapour deposition or the film etching of amorphous silicon membrane, silica membrane, silicon nitride film; The rectangle PECVD reaction chamber that area surpasses 1m2 is used to the film transistor matrix producing the photovoltaic solar battery and be used for the large-area flat-plate indicating meter.These industrial application are had relatively high expectations to the ununiformity of film thickness.Generally, these reaction chambers drive with standard 13.56MHz excitation frequency, and (the very high frequency(VHF) technology VHF) has keen interest but people are to using higher frequency.Adopt the VHF activated plasma, thereby can reduce the ion energy that plasma sheath layer thickness and voltage reduce electronic temp, reduce the bombardment substrate, increased the ion-flow rate that is transported to growth surface, can improve the particle size that sedimentation rate can increase crystal grain in the film again, and have the good technical compatibility with the amorphous/microcrystalline silicon solar cell preparation technology of routine.Therefore, people produce very big interest to VHF-PECVD in industrial application.
In the process of deposition or etching, many factors can cause the heteropical generation of film transverse growth in radio frequency parallel plate reaction chamber.This comprises substrate and electrode imperfectly contacts, have that dust granules pollutes in the geometrical shape of substrate, inappropriate gas flow distribution, plasma body, electrode asymmetric, and various electrostatics and Electromagnetic Environmental Effect etc.Because in the design of the parameter of plasma body and reaction chamber, these effects all have remarkable influence under various excitation frequencies, and appropriate design and the appropriate parameters adjustment by reaction chamber can partly or entirely be solved usually.Yet, when improving along with the excitation frequency that is applied to the big area reaction chamber, in the reaction chamber of traditional condenser coupling parallel-plate electrode reaction chamber or application ladder type electrode, the electromotive force logarithmic singularity effect of electromotive force standing wave effect and power feed-in coupling end has had a strong impact on the homogeneity of Potential Distributing.Since plasma body have caused wavelength attenuation or a degradation effects, when the size of reaction chamber approximately is to be in the wavelength X in the freeboard under the excitation frequency
0(λ under 13.56MHz
0/ 4=5.53m only is 0.75m when 100MHz) four/for the moment, it is important that the standing wave heterogeneity has become.Expect that uniform plasma body realizes uniformly deposition or etching, must reasonably design the standing electromagnetic wave effect in the inhibited reaction chamber reaction chamber (mainly being electrode wherein).Therefore, obtain the uniform big area VHF-PECVD electrode design of electric field, have important practical significance and using value.
[summary of the invention]
Purpose of the present invention is intended to for solving these problems of prior art, and provide a kind of big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field, this electrode can obtain the big area VHF-PECVD reaction chamber of practicability, provide electric field uniform electrode design scheme, and then promote the industrialization process of low-cost silicon-film solar-cell.
The present invention has designed a kind of big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field for achieving the above object.It comprises power electrode plates and power feed-in port, it is characterized in that described power electrode plates is provided with corresponding additional electrical pole piece near power feed-in port, described additional electrical pole piece is parallel to the power electrode plates horizontal plane, and described additional electrical pole piece is connected the edge of the power electrode face of power electrode plates.
Described power feed-in port can be symmetricly set on power electrode relatively for two ends, four ends, six ends or eight ends with vertical two sides of electrode plane or four sides on.
The power electrode face of described power electrode plates can be a single or double.
Described power feed-in port can be horizontally set on the vertical side of power electrode board plane on.
Described power feed-in port also can be to be vertically set on the opposing another side of power electrode plates electrode surface.
Described power feed-in port can be a contact or is the feed-in of line contact.
Described additional electrical pole piece can be other shapes such as arc (circular arc or elliptic arc) or rectangle.
Described additional electrical pole piece and power electrode plates can be whole, also can be that split connects up.
The present invention adopts this special-shaped electrode can obtain the big area VHF-PECVD reaction chamber of uniform electric field, and reaction chamber comprises: ground connection reaction chamber, power electrode, ground-electrode, power transit line and power feed-in port.Described power electrode plates is provided with corresponding additional electrical pole piece near power feed-in port, described additional electrical pole piece is parallel to the power electrode plates horizontal plane, the thickness of described additional electrical pole piece is less than power electrode plates, and described additional electrical pole piece is connected the edge of the power electrode face of power electrode plates.
Special-shaped power electrode of the present invention can adopt in the PECVD reaction chamber of any excitation frequency and arbitrary area size.This special-shaped power electrode utilizes the additional pole of electrode power feed-in port to change the electrode surface distribution of current, can suppress near the logarithmic singularity effect of the electromotive force of feedthrough electrode inbound port.The present invention is by optimizing big area very high frequency(VHF) power source feed-in mode, electrode shape etc., solved broad-area electrode plate Potential distribution homogeneity, be the reliable assurance of research and development big area VHF-PECVD thin film deposition and etching system, can promote silicon thin-film battery and film transistor matrix technology industrialization process effectively.
[description of drawings]
Fig. 1 is a big area abnormity parallel-plate electrode PECVD reaction chamber synoptic diagram;
Fig. 2 is big area abnormity parallel-plate electrode and power feed-in port distribution schematic diagram;
Fig. 3 is a big area abnormity parallel-plate electrode floor map;
Fig. 4 is an arc special-shaped electrode structural representation;
Fig. 5 is an arc special-shaped electrode floor map;
Fig. 6 is vacuum electric field distribution Theoretical Calculation result between arc abnormity parallel-plate electrode;
Fig. 7 is a rectangle I special-shaped electrode structural representation;
Fig. 8 is a rectangle I special-shaped electrode floor map;
Fig. 9 is vacuum electric field distribution Theoretical Calculation result between rectangle I abnormity parallel-plate electrode;
Figure 10 is a rectangle II special-shaped electrode structural representation;
Figure 11 is a rectangle II special-shaped electrode floor map;
Figure 12 is vacuum electric field distribution Theoretical Calculation result between rectangle II abnormity parallel-plate electrode;
Figure 13 is an arc back feed-in type special-shaped electrode structural representation;
Figure 14 is an arc back feed-in type special-shaped electrode floor map;
Figure 15 is vacuum electric field distribution Theoretical Calculation result between arc back feed-in type abnormity parallel-plate electrode.
[embodiment]
Be described in detail with reference to accompanying drawing below in conjunction with embodiments of the invention.
The VHF-PECVD reaction chamber of the big area abnormity parallel-plate electrode that the present invention adopts mainly is made up of ground-electrode G, substrate S, special-shaped parallel plate power electrode P, power transmission line L1, L2 and connectivity port D1, D2, D3, the D4 of ground connection stainless steel reaction chamber R, placement substrate, shown in accompanying drawing 1,2.
In the power electrode plate structure of the present invention's redesign, power electrode plates is provided with corresponding additional electrical pole piece near power feed-in port, the additional electrical pole piece is parallel to the power electrode plates horizontal plane, the thickness of additional electrical pole piece is less than power electrode plates, and the additional electrical pole piece is connected the edge of the power electrode face of power electrode plates.Shown in accompanying drawing 2,3.Electrode side four end symmetric power feed-in modes, power transit line lays respectively at two relative sides of power electrode with connectivity port D1, D4 and D2, the D3 of power electrode, has added four additional electrical pole pieces towards substrate one side simultaneously near power feed-in four port D1, D2, D3 and D4.According to the special-shaped parallel-plate electrode of power electrode feed-in port Position Design, can change near the distribution of current of power feed-in port, influence the homogeneity of Potential Distributing between electrode thus.
For power feed-in mode, the present invention can adopt the feed-in of electrode points contact, also can be the feed-in of line style contact.Four ends symmetry feed-in mode can be adopted, feed-in modes such as two ends, six ends, eight ends can be also can adopted according to electrode size in the practical application.
Additional electrical pole piece design for power electrode:
According to the structure of reaction chamber, the power electrode plates plane relative with substrate is electrode plane, and the additional electrical pole piece then is connected its edge.If double-face electrode, promptly power electrode has two planes all to be used for handling plasma foil deposition or etching, and the horizontal edge of two relative substrates of this of power electrode all need connect the additional electrical pole piece.The shape of additional electrical pole piece can be circular arc, rectangle, half elliptic and other shape or the like.The additional electrical pole piece is connected the electrode plane edge of power feed-in port one side symmetrically.
Arc special-shaped electrode structural representation (shown in Figure 4).
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts side four ends symmetry feed-in mode, and four power feed-in ports are centered close to the horizontal central line position of electrode L long side face, and the two-port center is at a distance of 70cm; Each port one side is added an arc-shaped electrode, constitutes a plane with rectangular electrode, this plane in reaction chamber with substrate plane over against.The radius of arc-shaped electrode is 15cm, and thickness 1cm highly is 9cm.Arc special-shaped electrode planeform as shown in Figure 5.
Use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power.Adopt the PECVD reaction chamber of the special-shaped electrode structure of this example design, the Theoretical Calculation result of electric field distribution under the 40.68MHz excitation frequency as shown in Figure 6 between its electrode.Among the figure as can be seen: the electric field distribution heterogeneity is greatly about ± 4%, and this result is obviously less than the requirement of deposit film thickness heterogeneity within ± 10% usually.
Embodiment 2
Rectangle I special-shaped electrode structure (shown in Figure 7).
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts side four ends symmetry feed-in mode, and four power feed-in ports are centered close to the horizontal central line position of electrode L long side face, and the two-port center is at a distance of 70cm; Each port one side is added a little rectangular electrode, constitutes a plane with the rectangular large area electrode, this plane in reaction chamber with substrate plane over against.The long 30cm of little rectangular electrode, wide 8cm, thickness are 1cm, its long outward flange is not as good as the length edge of power electrode.Rectangle I special-shaped electrode planeform is shown in 8.
Use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power.Adopt the PECVD reaction chamber of the rectangle I special-shaped electrode structure of this example design, the Theoretical Calculation result of electric field distribution under the 40.68MHz excitation frequency as shown in Figure 9 between its electrode.Among the figure as can be seen: the electric field distribution heterogeneity is greatly about ± 4%, and this result is obviously less than the requirement of deposit film thickness heterogeneity within ± 10% usually.
Embodiment 3
Rectangle II special-shaped electrode structure (shown in Figure 10)
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts side four ends symmetry feed-in mode, and four power feed-in ports are centered close to the horizontal central line position of electrode L long side face, and the two-port center is at a distance of 70cm; Each port one side is added a little rectangular electrode, constitutes a plane with the rectangular large area electrode, this plane in reaction chamber with substrate plane over against.The length of little rectangular electrode is 40cm, wide 8.5cm, thickness 1cm, the length imbricate of its long outward flange and power electrode.Rectangle II special-shaped electrode planeform as shown in figure 11.
Use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power.Adopt the PECVD reaction chamber of the rectangle II special-shaped electrode structure of this example design, the Theoretical Calculation result of electric field distribution under the 40.68MHz excitation frequency as shown in figure 12 between its electrode.Among the figure as can be seen: the electric field distribution heterogeneity is greatly about ± 4%, and this result is obviously less than the requirement of deposit film thickness heterogeneity within ± 10% usually.
Embodiment 4
Arc back feed-in type special-shaped electrode structure (shown in Figure 13).
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm, adopt dorsal edge four ends symmetry feed-in mode, four power feed-in ports are centered close to the marginal position at the back side, the long limit of electrode L, and power transit line is vertical with electrode plane, and the two-port center is at a distance of 70cm; The opposite side of each port adds an arc-shaped electrode, constitutes a plane with rectangular electrode, this plane in reaction chamber with substrate plane over against.The radius 15cm of arc-shaped electrode, thickness 1cm highly is 8cm.This arc back feed-in type special-shaped electrode planeform as shown in figure 14.
Use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power.Adopt the PECVD reaction chamber of the special-shaped electrode structure of this example design, the Theoretical Calculation result of electric field distribution under the 40.68MHz excitation frequency as shown in figure 15 between its electrode.Among the figure as can be seen: the electric field distribution heterogeneity is greatly about ± 4%, and this result is obviously less than the requirement of deposit film thickness heterogeneity within ± 10% usually.
Claims (8)
1. big area VHF-PECVD reaction chamber special-shaped electrode that can obtain uniform electric field, comprise power electrode plates and power feed-in port, it is characterized in that described power electrode plates is provided with corresponding additional electrical pole piece near power feed-in port, described additional electrical pole piece is parallel to the power electrode plates horizontal plane, and described additional electrical pole piece is connected the edge of the power electrode face of power electrode plates.
2. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 1, it is characterized in that described power feed-in port can be symmetricly set on power electrode relatively for two ends, four ends, six ends or eight ends with vertical two sides of electrode plane or four sides on.
3. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 1 and 2 is characterized in that the power electrode face of described power electrode plates is a single or double.
4. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 3, it is characterized in that the horizontal saliva of described power feed side mouth flat be arranged on the vertical side of power electrode board plane on.
5. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 1 and 2 is characterized in that described power feed-in port is vertically set on the opposing another side of power electrode plates electrode surface.
6. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 1 and 2 is characterized in that described power feed-in port is a contact or the feed-in of line contact.
7. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 6 is characterized in that described additional electrical pole piece is arc or rectangle.
8. the big area VHF-PECVD reaction chamber special-shaped electrode that obtains uniform electric field according to claim 7 is characterized in that described additional electrical pole piece and power electrode plates are whole, or split connects up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101502289A CN100519836C (en) | 2007-11-19 | 2007-11-19 | Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field |
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| CN101187015A true CN101187015A (en) | 2008-05-28 |
| CN100519836C CN100519836C (en) | 2009-07-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800148A (en) * | 2010-03-17 | 2010-08-11 | 南开大学 | Tile type power electrode of large-area VHF-PECVD reaction chamber capable of obtaining uniform electric field |
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Face feed electrode for thin-film solar cell deposition |
-
2007
- 2007-11-19 CN CNB2007101502289A patent/CN100519836C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800148A (en) * | 2010-03-17 | 2010-08-11 | 南开大学 | Tile type power electrode of large-area VHF-PECVD reaction chamber capable of obtaining uniform electric field |
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Face feed electrode for thin-film solar cell deposition |
| WO2011153673A1 (en) * | 2010-06-11 | 2011-12-15 | 深圳市创益科技发展有限公司 | Surface feed-in electrode for deposition of thin film solar battery and signal feed-in method thereof |
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| CN100519836C (en) | 2009-07-29 |
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