CN101180545A

CN101180545A - Sheet probe for wafer inspection and applications thereof

Info

Publication number: CN101180545A
Application number: CNA2006800173574A
Authority: CN
Inventors: 木村洁; 原富士雄; 山田大典
Original assignee: JSR Corp
Current assignee: JSR Corp
Priority date: 2005-05-19
Filing date: 2006-05-19
Publication date: 2008-05-14
Also published as: TW200702672A; KR20080015828A; EP1882952A4; WO2006123772A1; US20090072844A1; EP1882952A1

Abstract

Disclosed is a wafer inspecting sheet-like probe which can surely achieve an excellent electrical connection status even with a wafer wherein a pitch of electrodes to be inspected is extremely small, and application of such probe. The wafer inspecting sheet-like probe is provided with an insulating sheet having a plurality of through holes extending in the thickness direction by following a pattern that corresponds to a pattern of the electrode to be inspected in the entire or a part of an integrated circuit formed on the wafer; and an electrode structure arranged to protrude from both planes of the insulating sheet in each of the through holes on the insulating sheet. The electrode structure is provided by connecting a front plane electrode section, which is exposed on the front plane of the insulating sheet and has a diameter larger than that of the front plane opening of the through hole on the insulating sheet, with a rear plane electrode section, which is exposed on the rear plane of the insulating sheet and has a diameter larger than that of the rear plane opening of the through hole on the insulating sheet, by a short-circuiting section inserted into the through hole of the insulating sheet, and the electrode structure is movable in the thickness direction of the insulating sheet.

Description

Sheet probe for wafer inspection and application thereof

Technical field

The invention relates to the electric-examination of under wafer state, carrying out a plurality of integrated circuit of on wafer, forming look into employed sheet probe for wafer inspection, wafer inspection with probe member, wafer inspection with probe and wafer inspector.

Background technology

General in the manufacturing process of conductor integrated circuit device, on the wafer that for example constitutes, form a plurality of integrated circuit by silicon, then each of these integrated circuit is carried out the electrical characteristics inspection on basis, select the detection test of defective integrated circuit thus.Cut this wafer then, form semi-conductor chip, be contained in the suitable encapsulation this semi-conductor chip and sealing.To the conductor integrated circuit device after the encapsulation each, under hot environment, check electrical characteristics then, select the aging test of the conductor integrated circuit device of latent defect thus.

During the electric-examination of integrated circuit such as above-mentioned detection test or aging test is looked into, check that in order to make in the object each is examined electrode and is electrically connected with detector, used to have the probe of checking with electrode, above-mentioned inspection with electrode according to the pattern setting corresponding with the pattern that is examined electrode.As above-mentioned probe, used the inspection that constitutes by pin or blade to arrange formed probe with electrode (inspection detector) in the past.

And, in the detection test that the integrated circuit that is formed on the wafer is carried out, the method of Cai Yonging was in the past: wafer is divided into a plurality of zones, each zone is formed with a plurality of as 16 integrated circuit, all integrated circuit that form are gone up in this zone carried out detection test in the lump, successively the integrated circuit that forms is gone up in other zones and carried out detection test in the lump.In recent years, in order to improve checking efficiency, to reduce and check cost, need carry out detection test in the lump to more integrated circuit.

In addition, in the aging test, very small as the integrated circuit (IC) apparatus of checking object, its operation is very inconvenient, so, for a plurality of integrated circuit (IC) apparatus are carried out aging test respectively, need the long period, so check that cost is quite high.Therefore, in recent years, WLBI (Wafer LevelBurn-in) test was suggested, and, to a plurality of integrated circuit that form on the wafer, carried out aging test in the lump that is.

But, make above-mentioned detection test and WLBI and test employed probe, need to arrange very many inspection detectors, so this probe price is high, and be examined the many and its spacing of electrode hour, it is just very difficult to make probe itself.

For the above reasons, recently, shown in Figure 51, a kind of probe is suggested, have: form the inspection circuit substrate 85 of a plurality of inspections according to the pattern corresponding on the one side with electrode 86 with the pattern that is examined electrode, be arranged on this inspection with the anisotropic conductive elastomeric sheets 80 on the one side of circuit substrate 85, be arranged on the sheet probe 90 (for example patent documentation 1) on this anisotropic conductive elastomeric sheets 80.

Sheet probe 90 in the above-mentioned probe is made of insulativity sheet 91 and a plurality of electrode assembly 95, above-mentioned a plurality of electrode assembly 95 is on this insulativity sheet 91, according to as the corresponding pattern setting of the pattern that is examined electrode in the wafer of checking object, on thickness direction, run through insulativity sheet 91 and extension respectively, each electrode assembly 95 is connected as one by the short circuit portion 98 that inserts logical insulativity sheet 91 at thickness direction and extend by the backplate portion 97 of overshooting shape surface electrode portion 96 of exposing from insulativity sheet 91 surfaces and the sheet exposed from insulativity sheet 91 back sides and to constitute.

Such sheet detection device 90 is generally by following method manufacturing.

At first, shown in Figure 52 (a), form the stacking material 90A that metal level 92 is constituted on the one side of preparation insulativity sheet 91, shown in Figure 52 (b),, be formed on the through hole 98H that inserts logical insulativity sheet 91 on the thickness direction by Laser Processing, dry corrosion processing etc.

Then, shown in Figure 52 (c), after forming etchant resist 93 on the metal level 92 of insulativity sheet 91, with metal level 92 as common electrode, handle as metallide by enforcement, at the inner deposit body of filling metal of the through hole 98H of insulativity sheet 91, form the short circuit portion 98 that connects as one with metal level 92, form the overshooting shape surface electrode portion 96 that connects as one with short circuit portion 98 on these insulativity sheet 91 surfaces simultaneously.

Remove etchant resist 93 from metal level 92 then, then shown in Figure 52 (d), comprising formation etchant resist 94A on insulativity sheet 91 surfaces of surface electrode portion 96, simultaneously on metal level 92, according to the pattern corresponding with the pattern that should form backplate portion, form etchant resist 94B, by this metal level 92 is implemented etch processes, shown in Figure 52 (e), remove the part of exposing in the metal level 92, form backplate portion 97, form electrode assembly 95 thus.

From insulativity sheet 91 sur-face peeling etchant resist 94A, peel off etchant resist 94B from backplate portion 92 simultaneously then, obtain sheet probe 90.

In the above-mentioned probe, on the wafer surface of checking object, the surface electrode portion 96 of the electrode assembly 95 in the sheet probe 90 is arranged on being examined on the electrode of this wafer, under this state, wafer is pushed down by probe, thus, anisotropic conductive elastomeric sheets 80 is pushed down by the backplate portion 97 of the electrode assembly in the sheet probe 90 95, thus, in this anisotropic conductive elastomeric sheets 80, this backplate portion 97 and inspection are used between the electrode 86 with the inspection of circuit substrate 85, form conductive path on its thickness, its result, wafer be examined electrode with check with the inspection of circuit substrate 85 accomplished with being electrically connected between the electrode 86.Then, under this state, this wafer is carried out required electric-examination look into.

And by above-mentioned probe, when wafer was pushed down by probe, according to the size of this wafer bending, anisotropic conductive elastomeric sheets distortion was so each that is examined electrode for a plurality of in the wafer can realize good electrical connection really.

But, in the above-mentioned probe, following problem is arranged.

Form in the metallide treatment process of short circuit portion 98 and surface electrode portion 96 in the manufacture method of sheet probe 90, provide electric current distribution uniform electric current to whole metal level 92, be actually very difficult, the inequality of this electric current distribution can cause the coating speed of growth difference of each through hole 98H of insulativity sheet 91, shown in Figure 53 (a), the projecting height of the surface electrode portion 96 of formation has deviation.And, shown in Figure 53 (b), when carrying out being electrically connected of sheet probe 90 and wafer 6, the flexibility that being insulated property of the deviation sheet 91 of surface electrode portion 96 projecting heights is had absorbs, promptly according to the extent of deviation of surface electrode portion 96 projecting heights, insulativity sheet 91 can be crooked, and this electrode assembly 95 is subjected to displacement, so each surface electrode portion 96 contacts with respectively being examined electrode 7, realizes required electrical connection thus.

But, in the wafer 6 be examined electrode 7 spacing is set when very little, be in the sheet probe 90 electrode assembly 95 spacing is set when very little, spacing distance between the adjacent electrode structure 95 diminishes with the ratio of insulativity sheet 91 thickness, so the flexibility of whole sheet probe 90 significantly reduces.Its result, shown in Figure 53 (c), when carrying out being electrically connected of sheet probe 90 and wafer 6, the deviation of surface electrode portion 96 projecting heights is not absorbed fully, be that electrode assembly 95 does not have abundant displacement, so, the surface electrode portion 96 that for example projecting height is little (among the figure left side surface electrode portion 96) not be examined electrode 7 and contact, therefore, be difficult to realize stable electrical connection to being examined electrode 7.

Patent documentation 1: the spy opens the 2001-15565 communique

Summary of the invention

The present invention is according to the problems referred to above inventions, though that its purpose is to provide is minimum as the spacing that is examined electrode in the wafer of checking object, also can realize really sheet probe for wafer inspection, wafer inspection to the good electrical connection status of wafer with probe member, wafer inspection with probe and wafer inspector.

Sheet probe for wafer inspection of the present invention has:

The insulativity sheet, according to as the corresponding pattern of the pattern that is examined electrode in all or part of integrated circuit that forms on the wafer of checking object, be respectively formed at a plurality of through holes that extend on the thickness direction,

Electrode assembly is arranged in each through hole of this insulativity sheet, and is outstanding from the two sides of this insulativity sheet respectively;

It is characterized in that, in each above-mentioned electrode assembly, expose from above-mentioned insulativity sheet surface, diameter greater than the surface electrode portion of the through hole face side opening diameter of this insulativity sheet with expose from this insulativity sheet back side, diameter is greater than the backplate portion of the through hole rear side opening diameter of this insulativity sheet, connect by the short circuit portion that inserts logical this insulativity sheet through hole, this insulativity sheet can move on its thickness direction relatively.

Wafer inspection probe member of the present invention is characterized in that, has above-mentioned sheet probe for wafer inspection and the anisotropic conductive connector that is arranged on this sheet probe for wafer inspection back side.

Wafer inspection probe of the present invention, have: according to the inspection circuit substrate of going up a plurality of inspections usefulness of formation electrodes as the corresponding pattern of the pattern that is examined electrode in all or part of integrated circuit that forms on the wafer of checking object, surface, be arranged on this inspection with the lip-deep anisotropic conductive connector of circuit substrate, be arranged on the sheet probe for wafer inspection on this anisotropic conductive connector;

It is characterized in that, above-mentioned sheet probe for wafer inspection has: form the insulativity sheet of a plurality of through holes that extend respectively according to the pattern corresponding with the above-mentioned pattern that is examined electrode on thickness direction, be arranged in each through hole of this insulativity sheet, respectively from the outstanding electrode assembly in the two sides of this insulativity sheet;

In each above-mentioned electrode assembly, expose from above-mentioned insulativity sheet surface, diameter greater than the surface electrode portion of the through hole face side opening diameter of this insulativity sheet with expose from this insulativity sheet back side, diameter is greater than the backplate portion of the through hole rear side opening diameter of this insulativity sheet, connect by the short circuit portion that inserts logical this insulativity sheet through hole, this insulativity sheet can move on its thickness direction relatively.

Wafer inspection of the present invention is with in the probe, and the distance that electrode assembly can move on insulativity sheet thickness direction is that 5～50 μ m are preferable.

In addition, the insulativity sheet is 3 * 10 by coefficient of linear thermal expansion ^-5The following material of/K constitutes preferable.

In addition, the anisotropic conductive connector has: with the electrode zone that is examined electrode is corresponding, the frame plate of a plurality of openings of formation as forming in all or part of integrated circuit that forms on the wafer of checking object, with a plurality of elastic anisotropy conducting films that are set up and are supported with blocking this frame plate opening; This elastic anisotropy conducting film has: according to above-mentioned electrode zone in be examined the connection conductive part corresponding pattern setting of the pattern of electrode, that contain the magnetic conductive particle in the elastomer, make the insulation division of the elastomer formation of their mutually insulateds, preferable.

Wafer inspector of the present invention be to be formed on the wafer a plurality of integrated circuit each, under wafer state, carry out the galvanoscopic wafer inspector of this integrated circuit, it is characterized in that having above-mentioned wafer inspection probe.

According to wafer inspection probe of the present invention, each electrode assembly in the sheet probe for wafer inspection, relative insulativity sheet, can on its thickness direction, move, so even the surface electrode portion projecting height of electrode assembly has deviation, when pressurizeing, according to the projecting height of this surface electrode portion to being examined electrode, electrode assembly moves on the thickness direction of insulativity sheet, so can realize the good electrical connection status to wafer.

In addition, the diameter of each surface electrode portion and backplate portion is greater than the face side opening diameter and the rear side opening diameter of the through hole of insulativity sheet, so each of this surface electrode portion and this backplate portion plays barrier effect, can prevent that electrode assembly from coming off from the insulativity sheet.

In addition, form the resin material of insulativity sheet,, can suppress the caused electrode assembly of thermal expansion and the dislocation that is examined electrode of this insulativity sheet by using the little material of coefficient of linear thermal expansion.

In addition, as the anisotropic conductive connector, the elastic anisotropy conducting film is set up and is supported on a plurality of openings that form on the frame plate, thus, each elastic anisotropy conducting film is can area less, the elastic anisotropy conducting film that area is little is because the thermal expansion absolute magnitude on its face direction is little, so can suppress connection conductive part and the dislocation of checking with electrode and electrode assembly that temperature variation causes.

Therefore, in the inspection of wafer, can stable maintenance to the good electrical connection status of wafer.

Description of drawings

[Fig. 1] expression is about the explanation sectional view of probe the 1st routine structure of the present invention.

[Fig. 2] enlarges the major part structure of the probe of the 1st example the explanation sectional view of back expression.

Inspection in the probe of [Fig. 3] expression the 1st example planimetric map of circuit substrate.

[Fig. 4] will check the key diagram of representing with after the expansion of the lead-in wire electrode part in the circuit substrate.

The planimetric map of the anisotropic conductive connector in the probe of [Fig. 5] the 1st example.

[Fig. 6] enlarges the elastic anisotropy conducting film in the anisotropic conductive connector explanation sectional view of back expression.

The explanation sectional view of the sheet probe structure in the probe of [Fig. 7] expression the 1st example.

[Fig. 8] enlarges the major part structure of sheet probe the explanation sectional view of back expression.

[Fig. 9] expression is used to make the explanation sectional view of the laminated material structure of sheet probe.

Form the explanation sectional view of the state of opening on the metal level in [Figure 10] presentation layer laminate materials.

Form the explanation sectional view of the state of through hole on the insulativity sheet in [Figure 11] presentation layer laminate materials.

The explanation sectional view of [Figure 12] expression composite laminate materials structure.

Form the explanation sectional view of the state of etchant resist in [Figure 13] expression composite laminate materials.

Form the explanation sectional view of the state of electrode assembly in the through hole of the insulativity sheet in [Figure 14] expression composite laminate materials.

The explanation sectional view of the state behind the etchant resist is removed in [Figure 15] expression from composite laminate materials.

[Figure 16] expression is about the explanation sectional view of probe the 2nd routine structure of the present invention.

[Figure 17] enlarges the major part structure of the probe of the 2nd example the explanation sectional view of back expression.

Inspection in the probe of [Figure 18] expression the 2nd example planimetric map of circuit substrate.

The planimetric map of the anisotropic conductive connector in the probe of [Figure 19] the 2nd example.

[Figure 20] expression is about the explanation sectional view of the 1st routine structure of wafer inspector of the present invention.

[Figure 21] enlarges the major part structure of the wafer inspector of the 1st example the explanation sectional view of back expression.

[Figure 22] enlarges the connector in the wafer inspector of the 1st example the explanation sectional view of back expression.

[Figure 23] expression is about the explanation sectional view of the 2nd routine structure of wafer inspector of the present invention.

The explanation sectional view of the major part structure in other examples of [Figure 24] expression sheet probe.

[Figure 25] expression is used to make the explanation sectional view of the laminate construction of sheet probe shown in Figure 24.

[Figure 26] represents to form in the duplexer shown in Figure 25 the explanation sectional view of the state of through hole.

Form the explanation sectional view of the state of thin metal layer on [Figure 27] stacked surface of expression and the through hole internal face.

Form the explanation sectional view of the state of electrode structure body and function pillar in the through hole of [Figure 28] expression duplexer.

The explanation sectional view of the structure of [Figure 29] expression complex.

[Figure 30] expression insulativity sheet is arranged on the explanation sectional view of the state on the padded coaming.

Be provided with the explanation sectional view of the state of complex on [Figure 31] expression insulativity sheet.

Form the explanation sectional view of the state of through hole on [Figure 32] expression insulativity sheet.

The explanation sectional view of the state after the end face of [Figure 33] expression electrode structure body and function pillar exposes.

The explanation sectional view of the state after [Figure 34] expression electrode assembly forms.

The explanation sectional view of the state after [Figure 35] expression metal forming and thin metal layer expose.

The explanation sectional view of the major part structure in other examples of [Figure 36] expression sheet probe.

[Figure 37] expression is used to make the explanation sectional view of the laminate construction of sheet probe shown in Figure 36.

[Figure 38] represents to have formed in the duplexer shown in Figure 37 the explanation sectional view of the state of through hole.

Form the explanation sectional view of the state of thin metal layer on [Figure 39] stacked surface of expression and the through hole internal face.

Formed the explanation sectional view of the state of electrode structure body and function pillar in the through hole of [Figure 40] expression duplexer.

The explanation sectional view of the structure of [Figure 41] expression complex.

The explanation sectional view of the state on the surface of [Figure 42] expression insulativity sheet behind the formation resist layer.

The back side of [Figure 43] expression insulativity sheet is provided with the explanation sectional view of the state behind the complex.

Formed the explanation sectional view of the state behind the through hole in [Figure 44] expression insulativity sheet.

The explanation sectional view of the state after the front end face of [Figure 45] expression electrode structure body and function pillar exposes.

The explanation sectional view of the state after [Figure 46] expression electrode assembly forms.

The explanation sectional view of the state after [Figure 47] expression metal forming and thin metal layer expose.

[Figure 48] expression is about the explanation sectional view of the major part structure in other examples of probe of the present invention.

[Figure 49] expression is about the explanation sectional view of the structure of other examples of wafer inspector of the present invention.

The explanation sectional view of the structure of the employed anisotropic conductive connector of wafer inspector that [Figure 50] expression is shown in Figure 49.

The explanation sectional view of the structure in one example of [Figure 51] expression probe in the past.

[Figure 52] expression is used for making the explanation sectional view of operation of the sheet probe of probe in the past.

[Figure 53] is the explanation sectional view that the electrode assembly in the sheet probe in the probe is in the past enlarged the back expression (a), (b) be the explanation sectional view of the state after respectively being examined electrode and contacting of expression each surface electrode portion and wafer, (c) be the presentation surface electrode part and be examined the explanation sectional view that electrode comes in contact bad state.

Symbol description

2 controllers

3 input and output terminals

3R input and output terminal portion

4 connectors

The 4A conductive pin

The 4B holding components

5 wafer carrying bench

6 wafers

7 are examined electrode

10 probe

The 10A probe member

11 inspection circuit substrates

12 the 1st base components

13 lead-in wire electrodes

The 13R electrode part that goes between

14 supports

The 14K opening

The 14S stage portion

15 the 2nd base components

16 inspection electrodes

16R checks and uses electrode part

17 strengthening parts

20 anisotropic conductive connectors

21 frame plates

22 openings

23,23A elastic anisotropy conducting film

24 connection conductive parts

25 insulation divisions

26 function portions

27 teats

28 are supported portion

29 anisotropic conductive elastomeric sheets

30 sheet probes

The 30A composite laminate materials

The 30B stacking material

31 insulativity sheets

The 31H opening

32 electrode assemblies

32a surface electrode portion

32b backplate portion

32c short circuit portion

32P electrode structure body and function pillar

The 33A metal level

The 33B thin metal layer

The 33K opening

34,35 etchant resists

34H, 35H pattern hole

40 holding members

50 complexs

The 50A duplexer

The 50H through hole

51 metal formings

The 51H through hole

52,53 resist layers

52H, 53H through hole

54,55 resin sheets

54H, 55H through hole

56 thin metal layers

57 padded coamings

60 complexs

The 60A duplexer

The 60H through hole

61 metal formings

The 61H through hole

62,63 resist layers

62H, 63H through hole

64,65 resin sheets

64H, 65H through hole

66 thin metal layers

67 resist layers

70 anisotropic conductive connectors

71 supports

72 openings

75 anisotropic conductive elastomeric sheets

76 travel mechanisms

77 winding rollers

78 take up rolls

80 anisotropic conductive elastomeric sheets

85 inspection circuit substrates

86 inspection electrodes

90 sheet probes

The 90A stacking material

91 insulativity sheets

92 metal levels

93 etchant resists

94A, 94B etchant resist

95 electrode assemblies

96 surface electrode portions

97 backplate portions

98 short circuit portions

The 98H through hole

The P electroconductive particle

Embodiment

Describe embodiments of the present invention below in detail.

＜wafer inspection probe 〉

Fig. 1 represents about the explanation sectional view of wafer inspection of the present invention with probe (being designated hereinafter simply as " probe ") the 1st routine structure, and Fig. 2 represents the explanation sectional view of major part structure of the probe of the 1st example.

The 1st routine probe 10, for example be used for to the wafer that formed a plurality of integrated circuit, wafer state next and carry out the aging test of each this integrated circuit, constitute with probe member (being designated hereinafter simply as " probe member ") 10A with the wafer inspection on the one side (Fig. 1 and Fig. 2's is top) of circuit substrate 11 by checking with circuit substrate 11 and being arranged on this inspection, probe member 10A is made of sheet probe for wafer inspection (being designated hereinafter simply as " sheet probe ") 30 and the anisotropic conductive connector 20 that is arranged on these sheet probe 30 back sides.

Check with circuit substrate 11, as shown in Figure 3, the 1st base component 12 with disk shape, the middle body on the surface of the 1st base component 12 (Fig. 1 and Fig. 2's is top), sheet the 2nd base component 15, the 2 base components 15 that are provided with polygon-octagonal keep by being fixed on the 1st base component 12 lip-deep supports 14.In addition, be provided with strengthening part 17 on the middle body at the 1st base component 12 back sides.

On the middle body on the 1st base component 12 surfaces, a plurality of connections form according to suitable pattern with electrode (omitting diagram).In addition, on the periphery at the 1st base component 12 back sides, as shown in Figure 4, form lead-in wire electrode part 13R, among the lead-in wire electrode part 13R, a plurality of lead-in wire electrodes 13 are arranged along the circumferencial direction of the 1st base component 12.The pattern of lead-in wire electrode 13, be with wafer inspector described later in the corresponding pattern of pattern of input and output terminal of controller.Each electrode 13 that goes between is electrically connected with being connected with electrode by internal wiring (omit diagram).

The surface of the 2nd base component 15 (Fig. 1 and Fig. 2's is top) forms inspection electrode part 16R, check with among the electrode part 16R, a plurality of inspections with electrode 16 according to wafer as the inspection object on the corresponding pattern setting of the pattern that is examined electrode in all integrated circuit of forming.In addition, the 2nd base component 15 back sides, a plurality of terminal electrodes (omit and illustrate) are according to suitable pattern setting, and each terminal electrode is electrically connected with electrode 16 with inspection by internal wiring (omitting diagram).

And the connection of the 1st base component 12 is electrically connected by suitable mode with the terminal electrode of electrode and the 2nd base component 15.

Constitute the baseplate material of checking with the 1st base component 12 in the circuit substrate 11, can use well-known in the past various materials, object lesson is such as compound resin baseplate materials such as glass-fiber reinforced epoxy resin, glass-fiber reinforced phenolics, glass-fiber reinforced polyimide resin, glass-fiber reinforced bismaleimide-triazine resin etc.

Constitute the material of checking with the 2nd base component 15 in the circuit substrate 11, using coefficient of linear thermal expansion is 3 * 10 ^-5Material below the/K is better, is more preferably 1 * 10 ^-7～1 * 10 ^-5/ K, preferably 1 * 10 ^-6～6 * 10 ^-6/ K.The sheet metal that the object lesson of such baseplate material constitutes such as, the mineral-type baseplate material of formations such as パイレ Star Network ス (registered trademark) glass, quartz glass, alumina, beryllia, silit, aluminium nitride, boron nitride, with Fe-Ni alloy steel such as 42 alloys, section's Lip river fernico, invar alloy is the multilayer board material of resins such as core material, stacked epoxy resin or polyimide resin etc.

Support 14 has the polygon-octagonal opening 14K that is fit to the 2nd base component 15 profiles, has held the 2nd base component 15 in this opening 14K.In addition, the outer rim of support 14 is circular, on the outer rim of this support 14, forms stage portion 14S along circumferencial direction.

Anisotropic conductive connector 20 among the probe member 10A as shown in Figure 5, has the disk shape frame plate 21 that is formed with a plurality of openings 22 that run through respectively on thickness direction.The opening 22 of this frame plate 21 forms accordingly with the pattern that is examined the electrode zone of electrode as the formation in the whole integrated circuit that form on the wafer of checking object.In the frame plate 21, a plurality of elastic anisotropy conducting films 23 that have electric conductivity on thickness direction are set to: block an opening 22 respectively, and supported by the edge of opening portion of this frame plate 21.

The base material of each elastic anisotropy conducting film 23 is made of elastomer, enlarge expression as Fig. 6, have: a plurality of connections of extending on thickness direction are with conductive parts 24, by be formed on this connection with conductive part 24 each around, function portion 26 that this connection is constituted with the insulation division 25 of each mutual insulating of conductive part 24; This function portion 26 is arranged in the opening 22 of frame plate 21.Connection in this function portion 26 is with conductive part 24, according to the corresponding pattern setting of the pattern that is examined electrode as the electrode zone in the integrated circuit that forms on the wafer of checking object.

Form the fixing portion that is supported 28 that supports around the function portion 26, form as one continuously with this function portion 26 by frame plate 21 edge of opening portions.Specifically, the portion that is supported 28 in this example forms two strands, the edge of opening portion of frame plate 21 is clamped, with the support that is fixed of state closely.

Connection in the function portion 26 of elastic anisotropy conducting film 23 has closely comprised the electroconductive particle P with magnetic with in the conductive part 24 in the mode of arranging on thickness direction.Relative with it, insulation division 25 does not contain or contains hardly electroconductive particle P fully.

In addition, outstanding on the two sides of the function portion 26 in the elastic anisotropy conducting film 23 in the illustrated embodiment from connecting with the surface outside the place at conductive part 24 and peripheral part place thereof, form teat 27.

The thickness of frame plate 21, according to its material and difference, it is preferable to be generally 20～600 μ m, and 40～400 μ m are better.

During this thickness less than 20 μ m, when using anisotropic conductive connector 20, can not get necessary strength, the permanance that becomes easily is lower, perhaps can not get keeping the rigidity of these frame plate 21 shapes, the operability step-down of anisotropic conductive connector 20.In addition, when thickness surpassed 600 μ m, the thickness of the elastic anisotropy conducting film 23 that forms on the opening 22 was excessive, was difficult to obtain connecting with the satisfactory electrical conductivity in the conductive part 24 and adjacent connection with the insulativity between the conductive part 24.

The shape and size of the face direction of the opening 22 of frame plate 21 are according to the size that is examined electrode, spacing and design as the wafer of checking object.

The material that constitutes frame plate 21 is not particularly limited, so long as this frame plate 21 material not yielding, that have the rigidity of its shape of stable maintenance gets final product, for example can use various materials such as metal material, stupalith, resin material, when frame plate 21 is made of metal material, also can form insulativity by overlay film on these frame plate 21 surfaces.

Constitute the object lesson of the metal material of frame plate 21, for example the alloy of combination more than 2 kinds or alloy steel etc. in metal such as iron, copper, nickel, titanium, aluminium or these metals.

In addition, constitute the material of frame plate 21, coefficient of linear thermal expansion is 3 * 10 ^-5/ K following preferable ,-1 * 10 ^-7～1 * 10 ^-5/ K is better, and preferably 1 * 10 ^-6～8 * 10 ^-6/ K.

The object lesson of such material for example can be enumerated the alloy such as Eyring Wa Er type constant modulus alloy, super Invar alloy, section's Lip river fernico, 42 alloys such as invar type alloy, nickel chromium triangle constant modulus alloy of invar alloy etc. or alloy steel etc.

Thick entirely (being the thickness of connection with conductive part 24 in the illustrated example) of elastic anisotropy conducting film 23 is that 50～3000 μ m are preferable, and 70～2500 μ m are better, are preferably 100～2000 μ m.This thickness can access the elastic anisotropy conducting film 23 with sufficient intensity when 50 μ m are above.In addition, this thickness can access the connection conductive part 23 with required electric conductivity characteristic when 3000 μ m are following.

The projecting height of teat 27, it adds up to the preferable more than 10% of these teat 27 thickness, and is better more than 20%.Formation has the teat 27 of above-mentioned projecting height, can fully compress with little plus-pressure to connect with conductive part 24, so can access good electrical conductivity.

In addition, the projecting height of teat 27, preferable below 100% for the shortest width of this teat 27 or diameter, better below 70%.Formation has the teat 27 of above-mentioned projecting height, can be crooked when this teat 27 is pressurized, so can access the electric conductivity of expectation.

In addition, the thickness (in the illustrated example be in two bursts of parts wherein one thickness) that is supported portion 28 is that 5～600 μ m are preferable, and 10～500 μ m are better, are preferably 20～400 μ m.

In addition, being supported portion 28 is not to form two strands of shapes, can only be fixed on the one side of frame plate 21 yet.

As the elastomer that constitutes elastic anisotropy conducting film 23, the thermotolerance polymer substance with cross-linked structure is preferable.Can be used in the hardening polymer substance formation material that obtains above-mentioned cross-linked polymer material and can use various materials, object lesson is such as, silicon rubber, polybutadiene glue, natural rubber, polyisoprene rubber, Styrene-Butadiene rubber, acrylonitrile-butadiene copolymer rubber equiconjugate polydiene and hydrogen additive thereof, styrene-butadiene-diene block copolymer rubber, block copolymer rubber and hydrogen additives thereof such as styrene-isoprene block copolymer, chlorbutadiene, urethane rubber, polyesters rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, soft aqueous epoxy rubber etc.

Wherein, silicon rubber is because of its shaping processability and electrical characteristics, and is preferable.

As silicon rubber, with preferable after aqueous silicone rubber crosslinking or the condensation.Aqueous silicon rubber, its viscosity is in deformation velocity 10 ^-1 Be 10 during sec ⁵Pool is following preferable, can be condensed type, add-on type, contain vinyl and hydroxyl etc. in any.Specifically, such as dimethyl-silicon natural rubber, methyl ethylene silicon natural rubber, methyl phenyl vinyl silicon natural rubber etc.

Wherein, the aqueous silicon rubber (dimethyl silicone polymer that contains vinyl) that contains vinyl, normally with dimethyldichlorosilane or dimethyl dialkoxy silicane, in the presence of dimethyl vinyl chlorosilane or dimethyl vinyl alkoxy silane, add water decomposition and condensation reaction, for example continuous-dissolution-precipitation distinguishes repeatedly.

In addition, two ends contain the aqueous silicon rubber of vinyl, be that annular siloxane with octamethylcy-clotetrasiloxane and so on carries out anionic polymerisation in the presence of catalyzer, chain terminating agent for example uses the dimethyl divinylsiloxanes, other reaction conditionss (for example amount of the amount of annular siloxane and chain terminating agent) are suitably selected, and obtain thus.Here, as the catalyzer of anionic polymerisation, can use highly basic such as tetramethylammonium hydroxide and hydroxide n-butyl phosphorus or their tert-butoxy (silanolate) solution etc., temperature of reaction for example is 80～130 ℃.

The above-mentioned dimethyl silicone polymer that contains vinyl, its molecular weight Mw (is called polystyrene standard converted weight mean molecular weight.Down with) be 10000～40000 preferable.In addition, it seems that molecular weight distributing index (is called the value that the ratio Mw/Mn of average molecular mass Mn is counted in polystyrene standard converted weight average molecular weight Mw and polystyrene standard conversion from the thermotolerance viewpoint of the elastic anisotropy conducting film 23 that obtains.Be preferable below 2 down together).

In addition, the aqueous silicon rubber (dimethyl silicone polymer of hydroxyl) that contains hydroxyl, normally with dimethyldichlorosilane or dimethyl dialkoxy silicane, in the presence of dimethyl silicane hydroxide or dimethyl hydrogen alkoxy silane, add water decomposition and condensation reaction, for example continuous-dissolution-precipitation distinguishes repeatedly.

In addition, annular siloxane is carried out anionic polymerisation in the presence of catalyzer, chain terminating agent for example uses dimethyl silicane hydroxide, methyl two silicane hydroxides or dimethyl hydrogen alkoxy silane etc., other reaction conditionss (for example amount of the amount of annular siloxane and chain terminating agent) are suitably selected, and obtain thus.Here, as the catalyzer of anionic polymerisation, can use highly basic such as tetramethylammonium hydroxide and hydroxide n-butyl phosphorus or their tert-butoxy (silanolate) solution etc., temperature of reaction for example is 80～130 ℃.

The dimethyl silicone polymer of above-mentioned hydroxyl, its molecular weight Mw are 10000～40000 preferable.In addition, it seems that from the thermotolerance viewpoint of the elastic anisotropy conducting film 23 that obtains molecular weight distributing index is preferable below 2.

Among the present invention, can use in the dimethyl silicone polymer of above-mentioned dimethyl silicone polymer that contains vinyl and hydroxyl any, also can both and use.

Polymer substance forms in the material, can contain the hardening catalyst that makes this polymer substance form the material sclerosis.As above-mentioned hardening catalyst, can use organic peroxide, fatty acid azo-compound, silylanizing catalyzer etc.

The object lesson of the organic peroxide that uses as hardening catalyst is such as benzoyl peroxide, peroxidating bsidicyclo benzoyl, cumyl peroxide, peroxidating di tert butyl carbonate etc.

The object lesson of the fatty acid azo-compound that uses as hardening catalyst is such as azobis isobutyronitrile etc.

The object lesson that uses as the catalyzer of silylation reactive, such as chloro-platinic acid and salt thereof, platinum-contain complex compound, the platinum and 1 of unsaturated group siloxane complex compound, vinylsiloxane and platinum, the well-known materials such as complex compound of the complex compound of the complex compound of 3-divinyl tetramethyl disiloxane, triorganophosphine or phosphite ester and platinum, acetoacetate platinum chelate, cyclic diene and platinum.

The use amount of hardening catalyst is considered suitably to select after polymer substance forms the kind of the kind of material, hardening catalyst, other cure process conditions, and polymer substance forms material 100 weight portions relatively usually, is 3～15 weight portions.

Connection in the elastic anisotropy conducting film 23 is with the electroconductive particle P that contains in the conductive part 24, in the formation of this elastic anisotropy conducting film 23, from the moulding material that is used to form this elastic anisotropy conducting film 23, the viewpoint that moves easily of this electroconductive particle P it seems, uses the electroconductive particle P with magnetic preferable.Above-mentioned object lesson with electroconductive particle P of magnetic, have the metallics or their alloy particle of magnetic or contain the particle of these metals such as iron, nickel, cobalt etc., perhaps with above-mentioned particle as core particle, in electric conductivity good metal such as this core particle surface plating gold, silver, palladium, rhodiums, perhaps with dead matter particle such as nonmagnetic metal particle or beaded glass or polymer particle as core particle, at electric conductivity magnetics such as this core particle surface plating nickel, cobalts, perhaps on core particle, cover electric conductivity magnetic and electric conductivity good metal.

Wherein, use with nickel particles as core particle, its surface go up plating electric conductivity good metal such as gold, silver preferable.

Method in core particle surface coverage conductive metal is not particularly limited, and for example can be undertaken by electroless plating.

As electroconductive particle P, during the particle of conductive metal that used the core particle surface coverage, it seems from the viewpoint that obtains satisfactory electrical conductivity, the coverage rate of the conductive metal of particle surface (ratio of conductive metal area coverage and core particle surface area) is preferable more than 40%, better more than 45%, be preferably 47～95%.

In addition, the overlay capacity of conductive metal, preferable for 2.5～50 weight % of core particle, 3～45 weight % are better, 3.5～40 weight % are better, be preferably 5～30 weight %.

In addition, the particle of electroconductive particle P directly is that 1～500 μ m is preferable, 2～400 μ m are better, 5～300 μ m are preferable, is preferably 10～150 μ m.

In addition, the particle of electroconductive particle P directly distribute (Dw/Dn) be 1～10 preferable, 1～7 better, 1～5 better, be preferably 1～4.

The elastic anisotropy conducting film 23 that the electroconductive particle P of above-mentioned condition obtains is satisfied in use, and the pressurizing and deformation ratio is easier to, and the connection in this elastic anisotropy conducting film 23 can access enough electrical connections with in the conductive part 24 between electroconductive particle P.

Electroconductive particle P with above-mentioned averaged particles footpath can be by grading plants such as air stating device, sound wave filtration units, electroconductive particle and/or the core particle that forms this electroconductive particle is carried out classification handle, and modulates thus.The actual conditions that classification is handled can according to purpose electroconductive particle averaged particles footpath and particle directly distributes and the kind of grading plant etc. is suitably set.

In addition, the shape of electroconductive particle P is not particularly limited, from forming the viewpoint of disperseing easily the material at polymer substance, spherical, celestial body shape or condense by them after that 2 times particle constituted was block preferable.

In addition, the water percentage of electroconductive particle P be preferable below 5%, better below 3%, below 2%, be preferably below 1%.The electroconductive particle P of above-mentioned condition is satisfied in use, when the cure process of moulding material layer, can prevent from or suppress to produce in this moulding material layer bubble.

In addition, can suitably use particle after electroconductive particle P surface is handled by coupling agents such as silane coupling agents.Electroconductive particle P surface is after coupling agent is handled, and the cohesive of this electroconductive particle P and elastomer uprises, its result, and the elastic anisotropy conducting film 23 that obtains is at reusable permanance height.

The use amount of coupling agent, in the scope of the electric conductivity that does not influence electroconductive particle P, suitably select, but the coupling agent coverage rate in the electroconductive particle P surface (ratio of the area coverage of coupling agent and electric conductivity core particle surface area) is preferable, the above-mentioned coverage rate of amount more than 5% be 7～100% better, 10～100% better, be preferably 20～100%.

The connection of function portion 26 is proportional with containing of the electroconductive particle P in the conductive part 24, and volume fraction 10～60%, to be more preferably 15～50% ratios preferable.During this ratio less than 10%, can not get the enough little connection of resistance value conductive part 24 sometimes.In addition, this ratio surpasses at 60% o'clock, and the connection that obtains becomes fragile easily with conductive part 24, as connecting with conductive part 24, can not get essential elasticity.

Polymer substance forms in the material, as required, can contain inorganic filling materials such as common silica flour, silica gel, silica aerogel, alumina.Contain so inorganic filling material, can guarantee the thixotropy of the moulding material that obtains, its viscosity uprises, and the dispersion stabilization of electroconductive particle P is improved, and the intensity of the elastic anisotropy conducting film 23 that obtains after the cure process uprises.

The use amount of inorganic filling material like this is not particularly limited, but use amount in manufacture method described later, significantly hinders moving of the caused electroconductive particle P in magnetic field, so be not suitable for when excessive.

Such anisotropic conductive connector 20 for example can be opened the method for putting down in writing in the 2002-334732 communique by the spy and make.

Fig. 7 is the explanation sectional view of structure of sheet probe 30 in the probe 10 of expression the 1st example, and Fig. 8 is that the major part with sheet probe 30 enlarges the explanation sectional view that the back is represented.

This sheet probe 30 has insulativity sheet 31, in this insulativity sheet 31, a plurality of through hole 31H that on thickness direction, extend respectively according to form as the corresponding pattern of the pattern that is examined electrode of the wafer of checking object.Each through hole 31H of the insulativity sheet 31 that this is routine is same diameter, and therefore, face side opening diameter and the rear side opening diameter of this through hole 31H are identical in fact.Among each through hole 31H of this insulativity sheet 31, electrode assembly 32 is outstanding from these insulativity sheet 31 two sides respectively.And, insulativity sheet 31 back sides, circular ring-type holding member 40 is along the periphery setting (with reference to Fig. 1) of this insulativity sheet 31, and insulativity sheet 31 is kept by this holding member 40.

The structure of each electrode assembly 32 is: the surface electrode 31a of portion that expose, overshooting shape and that expose from insulativity sheet 31 back sides, the tabular backplate 32b of portion from insulativity sheet 31 surfaces are connected as one by the cylindric short circuit 32c of portion that inserts the through hole 31H that leads to insulativity sheet 31.The 32a of short circuit portion in this routine electrode assembly 32 is same diameter.The length L of the 32c of short circuit portion is greater than the thickness d of insulativity sheet 31 in the electrode assembly 32, and the diameter r2 of the 32a of this short circuit portion is less than the diameter r1 of the through hole 31H of insulativity sheet 31, thus, this electrode assembly 32 can move on the thickness direction of insulativity sheet 31.In addition, the diameter r4 of the diameter r3 of the 32a of surface electrode portion in the electrode assembly 32 and the 32b of backplate portion is respectively greater than the diameter r1 of the through hole 31H of insulativity sheet 31.

Constitute the material of insulativity sheet 31, for example can use fibre-reinforced resin materials such as resin materials such as aqueous polymkeric substance, polyimide resin, vibrin, amide resin, Nomex resin, glass-fiber reinforced epoxy resin, glass-fiber reinforced vibrin, glass-fiber reinforced polyimide resin, inorganic material such as vanadine, boron nitride are included in composite resin material in the epoxy resin etc. etc. as filling material.

In addition, insulativity sheet 31, using coefficient of linear thermal expansion is 3 * 10 ^-5Material below the/K is better, is more preferably 1 * 10 ^-6～2 * 10 ^-5/ K, preferably 1 * 10 ^-6～6 * 10 ^-6/ K.Use such insulativity sheet 31, can suppress the dislocation of the caused electrode assembly 32 of thermal expansion of this insulativity sheet 31.

In addition, the thickness d of insulativity sheet 31 is that 10～200 μ m are preferable, 15～100 μ m are better.

In addition, the diameter r1 of the through hole 31H of insulativity sheet 31 is that 20～250 μ m are preferable, 30～150 μ m are better.

Constitute the material of electrode assembly 32, can suitably use metal material, in the manufacture method particularly described later, use more preferable than the difficult etched material of the thin metal layer that forms on the insulativity sheet.The object lesson of such metal material is such as metal simple-substances such as nickel, cobalt, gold, aluminium or their alloy etc.Electrode assembly 32 also can be to constitute behind the metal stacking more than 2 kinds.

In addition, when the surface has been formed being examined electrode and carrying out electric-examination and look into of oxide film, make and be examined electrode and contact with the electrode assembly 32 of sheet probe 30, need destroy the oxide film that is examined electrode surface by the 32a of surface electrode portion of electrode assembly 32, to realize this electrode assembly 32 and to be examined being electrically connected of electrode.Therefore, the hardness of the 32a of surface electrode portion of electrode assembly 32 is that to destroy the degree of oxide film easily preferable.In order to obtain such 32a of surface electrode portion, can be contained in the metal that constitutes the surface electrode 32a of portion by the powdered rubber that hardness is high.

Such powdered rubber, can use diamond dust, silicon nitride, silit, pottery, glass etc., contain these an amount of non-conductive powdered rubbers, can not damage electrode assembly 32 electric conductivity, destroy being formed on the oxide film that is examined electrode surface by the 32a of surface electrode portion of electrode assembly 32.

In addition, in order to destroy easily the oxide film that is examined electrode surface, the shape of the 32a of surface electrode portion in the electrode assembly 32 can be made sharp keen overshooting shape, also can form fine concavo-convex on surface electrode portion 32a surface.

In addition, on 32a of surface electrode portion in the electrode assembly 32 and the 32b of backplate portion, as required, also can form coverlay.When for example being examined electrode and constituting, it seems that it is preferable to form the coverlay that is made of diffusion resistance metals such as silver, palladium, rhodiums on the 32a of surface electrode portion from the viewpoint that prevents this soldering diffuse by the soldering material.

The diameter r2 of the 32c of short circuit portion is that 18 μ m are above preferable, better more than the 25 μ m in the electrode assembly 32.When this diameter r2 was too small, this electrode assembly 32 can not get necessary strength sometimes.In addition, the diameter r2 of the diameter r1 of the through hole 31H of insulativity sheet 31 and the 32c of short circuit portion in the electrode assembly 32 poor (r1-r2) be 0.5 μ m above preferable, better more than the 1 μ m, be preferably more than the 2 μ m.When this difference is too small, on insulativity sheet 31 thickness directions, be difficult to make electrode assembly 32 to move.

The diameter r3 of the 32a of surface electrode portion in the electrode assembly 32 is for being examined the 70～150% preferable of electrode diameter.In addition, poor (r3-r1) of the diameter r1 of the diameter r3 of the 32a of surface electrode portion in the electrode assembly 32 and the through hole 31H of insulativity sheet 31, be 3 μ m above preferable, better more than the 5 μ m, be preferably more than the 10 μ m.When this difference was too small, electrode assembly 32 may come off from insulativity sheet 31.

In addition, the diameter r4 of the 32b of backplate portion in the electrode assembly 32 is for checking with 70～150% preferable with electrode 16 diameters of the inspection of circuit substrate 11.In addition, the diameter r1 of the through hole 31H of the diameter r4 of the 32b of backplate portion in the electrode assembly 32 and insulativity sheet 31 poor (r4-r1) be 3 μ m above preferable, better more than the 5 μ m, be preferably more than the 10 μ m.When this difference was too small, electrode assembly 32 may come off from insulativity sheet 31.

The distance that electrode assembly 32 can move on the thickness direction of insulativity sheet 31, promptly poor (L-d) of the thickness d of the length L of the 32c of short circuit portion in the electrode assembly 32 and insulativity sheet 31 is that 5～50 μ m are preferable, 10～40 μ m are better.When the distance that electrode assembly 32 can move is too small, be difficult to realize good electrical connection.In addition, when the distance that electrode assembly 32 can move was excessive, it is big that the length of the 32c of short circuit portion of the electrode assembly 32 that exposes from the through hole 31H of insulativity sheet 31 becomes, and when being used to check, the 32c of short circuit portion of electrode assembly 32 may crooked or damage.

The spacing of electrode assembly 32 according to setting as the spacing that is examined electrode of the wafer of checking object, for example is that 40～250 μ m are preferable, 40～150 μ m are better.

Here, " spacing of electrode assembly " is meant the center distance between the adjacent electrode structure, is the shortest distance.

Constitute the material of holding member 40, can use stupaliths such as low thermal expansion metal base material such as Eyring Wa Er type constant modulus alloy, section's Lip river fernico, 42 alloys such as invar type alloy, nickel chromium triangle constant modulus alloys such as invar alloy, super Invar alloy or alumina, silit, silicon nitride etc.

And, when sheet probe 30 is set, make being connected in the elastic anisotropy conducting film 23 of the 32b of backplate portion and anisotropic conductive connector 20 in each electrode assembly 32 with conductive part 24 butt joints, make holding member 40 with check with the stage portion 14S of the support 14 in the circuit substrate 11 mutually build-in decide.

Such sheet probe 30 for example can be by following method manufacturing.

At first, as shown in Figure 9, the one side of easily erosion property of preparation metal level 33A and insulativity sheet 31 is stacked to be the stacking material 30B that one constituted, metal level 33A among this stacking material 30B is carried out etch processes, remove a wherein part, thus, as shown in figure 10, according to the pattern corresponding, form a plurality of opening 33K with the pattern of the electrode that should connect metal level 33A.Then, as shown in figure 11, on the insulativity sheet 31 in stacking material 30B, form respectively the through hole 31H that is communicated with, on thickness direction, extends with the opening 33K of metal level 33A.Then as shown in figure 12, form the tubular thin metal layer 33B of easily erosion property, cover the through hole 31H internal face of insulativity sheet 31 and the edge of opening of metal level 33A.Produce composite laminate materials 30A thus, it has: the insulativity sheet 31 that has formed a plurality of through hole 31H that extend respectively on thickness direction, be layered in the easy erosion metal level 33A that has a plurality of opening 33K that are communicated with the through hole 31H of insulativity sheet 31 on the one side of this insulativity sheet 31, respectively, cover the through hole 31H internal face of insulativity sheet 31 and the easy erosion thin metal layer 33B of metal level 33A edge of opening.

In the above operation, form the method for the through hole 31H of insulativity sheet 31, can use laser processing method, boring processing method, etching and processing method etc.

Constitute the easy erosion metal material of metal level 33A and thin metal layer 33B, can use copper etc.

In addition, the thickness of metal level 33A is considered that purpose electrode assembly 32 can displacement waits to set, and specifically, is that 5～25 μ m are preferable, 8～20 μ m are better.

In addition, the thickness of thin metal layer 33B is set behind the diameter of the 32c of short circuit portion in the diameter of the through hole 31H of consideration insulativity sheet 31 and the electrode assembly 32 that should form.

In addition, form the method for thin metal layer 33B, can use non-electrolytic plating method etc.

Then this composite laminate materials 30A is carried out the light plating and handle, in each through hole 31H of insulativity sheet 31, form electrode assembly 32.Specifically, as shown in figure 13, form etchant resist 34 on metal level 33A surface, on this etchant resist 34, according to the electrode assembly 32 that should form in the corresponding pattern of the 32a of surface electrode portion pattern, be formed with a plurality of pattern hole 34H that are communicated with the through hole 31H of insulativity sheet 31 respectively; Form simultaneously etchant resist 35 at insulativity sheet 31 back sides, on this etchant resist 35, according to the electrode assembly 32 that should form in the corresponding pattern of the 32b of backplate portion pattern, be formed with a plurality of pattern hole 35H that are communicated with the through hole 31H of insulativity sheet 31 respectively.Then, with metal level 33A as common electrode, the enforcement metallide is handled, depositing metal on the part of in this metal level 33A, exposing, at thin metal layer 33B surface deposition metal, in the through hole 31H of insulativity sheet 31 and in pattern hole 34H, the 35H of etchant resist 34,35, form metallic object simultaneously, by an end face that exposes among the pattern hole 35H that grinds the etchant resist 35 from this metallic object, as shown in figure 14, be formed on the electrode assembly 32 that extends on insulativity sheet 31 thickness directions.

After forming electrode assembly 32 thus, remove etchant resist 34, remove etchant resist 35 from insulativity sheet 31 back sides simultaneously, as shown in figure 15, expose metal level 33A and insulativity sheet 31 from metal level 33A surface.Implement etch processes then, remove metal level 33A and thin metal layer 33B, thus, obtain sheet probe shown in Figure 7 30.

Probe 10 according to above-mentioned the 1st example, each electrode assembly 32 in the sheet probe 30, relative insulativity sheet 31, can on its thickness direction, move, so even the projecting height of the 32a of surface electrode portion of electrode assembly 32 has deviation, when being examined the electrode pressurization, according to the projecting height of the 32a of this surface electrode portion, electrode assembly 32 moves on the thickness direction of insulativity sheet 31, so can realize the good electrical connection status to wafer.

In addition, the diameter of each 32a of surface electrode portion and the 32b of backplate portion is greater than the diameter of the through hole 31H of insulativity sheet 31, so each of this 32a of surface electrode portion and the 32b of this backplate portion plays barrier effect, the result can prevent that electrode assembly 32 from coming off from insulativity sheet 31.

In addition, form the material of insulativity sheet 31, use the coefficient of linear thermal expansion materials with smaller, thus, can suppress the caused electrode assembly 32 of thermal expansion and the dislocation that is examined electrode of this insulativity sheet 31.

In addition, in the anisotropic conductive connector 20, elastic anisotropy conducting film 23 is arranged on a plurality of openings 22 that form on the frame plate 21 and is supported, therefore, each elastic anisotropy conducting film 23 is can area very little, the elastic anisotropy conducting film 23 that area is little is because of the thermal expansion absolute magnitude on its face direction is very little, so can suppress temperature variation causes, the inspection dislocation of the connection of electrode 12 and electrode assembly 32 with conductive part 24 relatively.

Therefore, in the aging test of wafer, can stable maintenance to the good electrical connection status of wafer.

Figure 16 is the explanation sectional view of expression about probe the 2nd routine structure of the present invention.Figure 17 is the explanation sectional view of major part structure of the probe of expression the 2nd example.

The 2nd routine probe 10, be used for for example to the wafer that has formed a plurality of integrated circuit, the aging test of under wafer state, carrying out each this integrated circuit, have and check that probe member 10A has sheet probe 30 and is arranged on the anisotropic conductive connector 20 at these sheet probe 30 back sides with circuit substrate 11 and the probe member 10A that is arranged on this inspection usefulness one side (Figure 16 and Figure 17's is top) of circuit substrate 11.

The inspection of the probe 10 of the 2nd example is with in the circuit substrate 11, as shown in figure 18, be formed with inspection electrode part 16R on the surface of the 2nd base component 15, this checks with among electrode part 16R, a plurality of inspections with electrode 16 according to wafer as the inspection object on the corresponding pattern setting of the pattern that is examined electrode in for example 32 (8 * 4) integrated circuit in the integrated circuit that forms.Check with other structures in the circuit substrate 11, with check with circuit substrate 11 in the probe 10 of the 1st example basic identical.

Anisotropic conductive connector 20 among the probe member 10A as shown in figure 19, has the frame plate 21 of rectangle sheet, has formed a plurality of openings 22 that run through extension respectively on thickness direction on this frame plate 21.The opening 22 of this frame plate 21 is and as forming the corresponding formation of electrode zone pattern that is examined electrode in for example 32 (8 * 4) integrated circuit in the integrated circuit that forms on the wafer of checking object.On the frame plate 21, a plurality of elastic anisotropy conducting films 23 that have electric conductivity on thickness direction are blocked opening 22 ground respectively and are supported by the edge of opening portion of this frame plate 21.Other structures in the anisotropic conductive connector 20 are identical with anisotropic conductive connector 20 in the probe 10 of the 1st example.

Sheet probe 30 has insulativity sheet 31, on the insulativity sheet 31, the a plurality of through hole 31H that on thickness direction, extend respectively, according to form as the corresponding pattern of the pattern that is examined electrode in for example 32 (8 * 4) integrated circuit in the integrated circuit that forms on the wafer of checking object; On each through hole 31H of this insulativity sheet 31, electrode assembly 32 is outstanding from these insulativity sheet 31 two sides respectively.In addition, the back side of insulativity sheet 31, circular ring-type holding member 40 is along the periphery setting of this insulativity sheet 31, and insulativity sheet 31 is kept by this holding member 40.Other structures in this sheet probe 30 are the same with sheet probe 30 in the probe 10 of the 1st example.

In addition, this routine sheet probe 30 can with the sheet probe 30 the same manufacturings in the probe 10 of the 1st example.

Probe 10 according to above-mentioned the 2nd example, each electrode assembly 32 in the sheet probe 30, relative insulativity sheet 31, can on its thickness direction, move, so even the projecting height of the 32a of surface electrode portion of electrode assembly 32 has deviation, when being examined the electrode pressurization, according to the projecting height of the 32a of this surface electrode portion, electrode assembly 32 moves on the thickness direction of insulativity sheet 31, so can realize the good electrical connection status to wafer.

[wafer inspector]

Figure 20 represents that about the general explanation sectional view of the 1st routine structure of wafer inspector of the present invention Figure 21 is the explanation sectional view that the major part structure of the wafer inspector of the 1st example is enlarged the back expression.The 1st wafer inspector, for each of a plurality of integrated circuit that form on the wafer, wafer state next and carry out the aging test of this integrated circuit.

The wafer inspector of the 1st example has controller 2, is used for carrying out that the temperature control as the wafer 6 of checking object, the power supply that carries out the inspection of wafer 6 are supplied with, the input and output control of signal, judges whether the integrated circuit of this wafer 6 is good after detecting the output signal from wafer 6.As shown in figure 22, controller 2 below have the 3R of input and output terminal portion that a plurality of input and output terminals 3 are provided with along circumferencial direction.

The below of controller 2 is provided with the probe 10 of the 1st example, it is provided with state as shown in figure 22, check the electrode 13 that respectively goes between that forms with on the 1st base component 12 in the circuit substrate 11, relative with the input and output terminal 3 of this controller 2, be held by suitable hold mode.

Be provided with connector 4 between the 3R of input and output terminal portion of controller 2 and the inspection in the probe 10 the lead-in wire electrode part 13R with circuit substrate 11, by this connector 4, the electrode 13 that respectively goes between that forms on the 1st base component 12 is electrically connected with each input and output terminal 3 of controller 2.The connector 4 of illustrated example has: a plurality of conductive pin 4A that can elastic compression on the length direction, support the holding components 4B of these conductive pins 4A, conductive pin 4A is arranged between the lead-in wire electrode 13 that forms on the input and output terminal 3 of controller 2 and the 1st base component 12.

The below of probe 10 is provided with the wafer carrying bench 5 of carrying as the wafer 6 of checking object.

In the above-mentioned wafer inspector, placed on the wafer carrying bench 5 as the wafer 6 of checking object, then pressurize from the below to probe 10, each 32a of surface electrode portion in the electrode assembly 32 of its sheet probe 30 contacts with the electrode 7 that respectively is examined of wafer 6, and, by each of the 32a of this surface electrode portion, wafer 6 respectively is examined electrode 7 pressurizations.Under this state, in the elastic anisotropy conducting film 23 of anisotropic conductive connector 20 each connects to be examined with the inspection of circuit substrate 11 32b of backplate portion with the electrode assembly 32 of electrode 16 and sheet probe 30 with conductive part 24 and clips, on thickness direction, be compressed, thus, this connection forms conductive path with conductive part 24 on its thickness direction, its result, the electrode 7 that is examined of wafer 6 is electrically connected with realization between the electrode 16 with checking the inspection with circuit substrate 11.Then,, wafer 6 is heated to set point of temperature, under this state, in a plurality of integrated circuit in this wafer 6 each is carried out required electric-examination look into by wafer carrying bench 5.

Wafer inspector according to above-mentioned the 1st example, probe 10 by the 1st example, realize and be examined being electrically connected of electrode 7 as the wafer 6 of inspection object, so can realize good electrical connection status to wafer, and can stable maintenance to the good electrical connection of wafer, therefore, in the aging test of wafer, can carry out the required electric-examination of this wafer is looked into.

Figure 23 represents about the general explanation sectional view of the 2nd routine structure of wafer inspector of the present invention, and this wafer inspector for a plurality of integrated circuit that form on the wafer each, carries out the aging test of this integrated circuit under wafer state.

The wafer inspector of the 2nd example, except the probe 10 with the 2nd example replaced the probe 10 of the 1st example, structure was basic identical with the wafer inspector of the 1st example.

In the wafer inspector of the 2nd example, from whole integrated circuit that wafer 6 forms, select and be examined electrode 7 such as 32 integrated circuit, be electrically connected with probe 10, check, then a plurality of integrated circuit of from other integrated circuit, selecting be examined electrode 7, be electrically connected with probe 10, check, by repeating this operation, the whole integrated circuit that form on the wafer 6 are carried out detection test.

Wafer inspector according to above-mentioned the 2nd example, probe 10 by the 2nd example, realize and be examined being electrically connected of electrode 7 as the wafer 6 of inspection object, so can realize good electrical connection status to wafer, and can stable maintenance to the good electrical connection of wafer, therefore, in the aging test of wafer, can carry out the required electric-examination of this wafer is looked into.

The present invention is not limited to above-mentioned embodiment, as following, various changes can be arranged.

(1) in the anisotropic conductive connector 20, be not to form teat on the elastic anisotropy conducting film 23, the whole surface of elastic anisotropy conducting film 23 can be smooth.

(2) on the elastic anisotropy conducting film 23 in the anisotropic conductive connector 20, except the connection that forms according to the pattern corresponding with the pattern that is examined electrode with conductive part 24, can also form not and be examined the disconnected conductive part of using that electrode is electrically connected.

(3) structure of sheet probe 30 can have insulativity sheet that has formed single opening and the dielectric film that is provided with in the mode of blocking this insulativity sheet opening, also can be to have insulativity sheet that has formed a plurality of openings and a plurality of dielectric films that are provided with in the mode of blocking each opening respectively, or have the insulativity sheet that formed a plurality of openings, the dielectric film more than 1 or 2 that is provided with in the mode of an opening blocking this insulativity sheet, 2 dielectric films more than 1 or 2 that are provided with upper shed blocking the insulativity sheet.

(4) in the sheet probe 30, as shown in figure 24, each 32a of surface electrode portion in the electrode assembly 32 and the shape of the 32b of backplate portion can be the approximate circle frustum, and the diameter of its end face is greater than face side opening diameter and the rear side opening diameter of the through hole 31H of insulativity sheet 31.

This sheet probe 30 can be by following method manufacturing.

At first, as shown in figure 25, make duplexer 50A, it has: the easy metal forming 51 of erosion property, one side of metal forming 51 (among the figure following) and another side are stacked therewith respectively is the resist

layer

52,53 of one.The thickness that metal forming 51 and resist

layer

52,53 these threes add up among this duplexer 50A is greater than the length of the electrode assembly 32 that should form, and is formed on the thickness of the thickness of resist layer on metal forming 51 one sides (below be also referred to as " resist layer ") 52 greater than the insulativity sheet of purpose sheet probe.In addition, among the duplexer 50A of illustrated example, the resin sheet 54,55 that for example is made of Polyvinylchloride has been gone up on the surface separately of resist

layer

52,53 stacked.

Among this duplexer 50A, constitute the easy erosion metal material of metal forming 51, can use copper etc.

In addition, the thickness of metal forming 51 is that 3～75 μ m are preferable, 5～50 μ m are better, is preferably 8～25 μ m.

The thickness of a resist layer 52 is suitably selected according to the thickness of the insulativity sheet of purpose sheet probe, for example is 10～200 μ m, and 15～100 μ m are preferable.

Being formed on the thickness of the resist layer (below be also referred to as " another side resist layer ") 53 of metal forming 51 another sides, for example is 10～50 μ m, and 15～30 μ m are preferable.

In addition, the thickness of resin sheet 54,55 is respectively 10～100 μ m.

Above-mentioned duplexer 50A is carried out Laser Processing, as shown in figure 26, through hole 51H, the 52H, 53H, 54H, the 55H that interconnect respectively with metal forming 51, resist

layer

52,53 and resin sheet 54,55, respectively according to form as the corresponding pattern of the pattern that is examined electrode of the wafer of checking object, thus, be formed on the through hole 50H that runs through on the thickness direction of duplexer 50A.

Then duplexer 50A being implemented electroless plating handles, as shown in figure 27, form the thin metal layer 56 of easily erosion property, cover the through hole 50H of duplexer 50A internal face, be the internal face of through hole 52H, 53H of the internal face of through hole 51H of metal forming 51 and resist layer 52,53 and the internal face of resin sheet 54,55 surfaces and through hole 54H, 55H, from resist layer 52,53, peel off resin sheet 54,55 then.Then for duplexer 50A, metal forming 51 and thin metal layer 56 as electrode, are implemented metallide and handled, depositing metal in through hole 52H, the 53H of the through hole 51H of metal forming 51 and resist layer 52,53, its result as shown in figure 28, forms columned electrode structure body and function pillar 32P.Then, both ends of the surface to resist layer 52,53 surfaces and electrode structure body and function pillar 32P are carried out milled processed, peel off a resist layer 52 from the one side of metal forming 51 then, electrode structure body and function pillar 32P is implemented electroless plating to be handled, as shown in figure 29, the whole surface of the part that the one side of the metal forming 51 from electrode structure body and function pillar 32P is outstanding is obtained complex 50 thus by the state that easy erosion property thin metal layer 56 covers.

In above-mentioned, the diameter of the through hole 50H that duplexer 50A go up to form is set according to the diameter of the 32c of short circuit portion of the electrode assembly 32 that should form.

Constitute the easy erosion metal material of thin metal layer 56, can use copper etc.

The thickness of thin metal layer 56, the diameter of the 32c of short circuit portion in the diameter of the through hole 50H of consideration duplexer 50A and the electrode assembly 32 that should form waits to be set.

As shown in figure 30, insulativity sheet 31 is arranged on the padded coaming 57 that is made of the high polymer elastic material, form adhesion layer (omitting diagram) above the insulativity sheet 31 at this simultaneously, the complex 50 of manufacturing is set on formed the insulativity sheet 31 of this adhesion layer, as shown in figure 31, the metallic film 56 that forms on the front end face of each electrode structure body and function pillar 32P contacts with this insulativity sheet 31.Under this state, for example by complex 50 extruding insulation sheet 31 on thickness direction, thus, utilization has formed each electrode structure body and function pillar 32P of thin metal layer 56, make 31 perforation of insulativity sheet, shown in figure 32, form a plurality of through hole 31H on the insulativity sheet 31, insert electrode assembly pillar 32P in each through hole 31H simultaneously.At this moment, the metal forming 51 in the complex 50 by adhesion layer, can be fixed on above the insulativity sheet 31 with peeling off.

Then, the thin metal layer that is formed on the electrode structure body and function pillar 32P end face is carried out milled processed, as shown in figure 33, expose the end face of electrode structure body and function pillar 32P.Then processing is forged at the two ends of electrode structure body and function pillar 32P.Specifically, on thickness direction, electrode structure body and function pillar 32P pressurization back is removed, repeat this operation, as shown in figure 34, form end face diameter greater than the through hole 31H face side opening diameter of insulativity sheet 31 and the surface electrode 32a and the 32b of backplate portion of rear side opening diameter, thus, on the short circuit portion 32c two ends of the through hole 31H of insertion insulativity sheet 31, end face diameter forms as one continuously greater than the through hole 31H face side opening of insulativity sheet 31 and the 32a of surface electrode portion and the 32b of backplate portion of rear side opening, forms electrode assembly 32.

To the pressurized conditions of electrode structure body and function pillar 32P, different according to the material of electrode structure body and function pillar 32P and size etc., it is preferable for example to add hot-working by embossing machine in the above-mentioned forging processing.

After forming electrode assembly 32, remove resist layer 52, as shown in figure 35, expose metal forming and thin metal layer 56 from metal forming 51.Implement etch processes then, remove metal forming 51 and thin metal layer 56, between the through hole 31H back side of insulativity sheet 31 and electrode assembly 32 surfaces, form the gap thus, thus, electrode assembly 32 can move on the thickness direction of insulativity sheet 31, thus, obtain sheet probe shown in Figure 24 30.

(5) in addition, in the sheet probe, as shown in figure 36, the shape of the through hole 31H of insulativity sheet 31 can be, by these insulativity sheet 31 surfaces (among the figure below) to the big taper of back side increasing diameter, each electrode assembly 32 has: the 32c of short circuit portion of the taper that increases to the other end diameter of rear side from an end of insulativity sheet 31 face side, the sheet surface electrode 32a of portion that forms as one with the end of the 32c of short circuit portion, the 32b of backplate portion of the taper that form continuously with the other end of the 32c of short circuit portion, diameter increases towards end face; The diameter of the 31a of surface electrode portion is greater than the face side opening diameter of the through hole 31H of insulativity sheet 31, and the end face diameter of the 31b of backplate portion is greater than the rear side opening diameter of the through hole 31H of insulativity sheet 31.

Above-mentioned sheet probe 30 can be by following method manufacturing.

At first, as shown in figure 37, make duplexer 60A, it has: the easy metal forming 61 of erosion property, one side of metal forming 61 (among the figure following) and another side are stacked therewith respectively is the resist

layer

62,63 of one.Metal forming 61 and resist

layer

62,63 among this duplexer 60A, the thickness that the three adds up to is greater than the length that the 32b of backplate portion in the electrode assembly 32 that should form and the 32c of short circuit portion add up to, and is formed on the thickness of the thickness of resist layer on metal forming 61 one sides (below be also referred to as " resist layer ") 62 greater than insulativity sheet 31.In addition, among the duplexer 60A of illustrated example, the

resin sheet

64,65 that for example is made of Polyvinylchloride has been gone up on the surface separately of resist

layer

62,63 stacked.

Among this duplexer 60A, constitute the easy erosion metal material of metal forming 61, can use copper etc.

In addition, the thickness of metal forming 61 is that 3～75 μ m are preferable, 5～50 μ m are better, is preferably 8～25 μ m.

The thickness of a resist layer 62 is suitably selected according to the thickness of insulativity sheet 31, for example is 10～200 μ m, and 15～100 μ m are preferable.

Being formed on the thickness of the resist layer (below be also referred to as " another side resist layer ") 63 of metal forming 61 another sides, for example is 10～50 μ m, and 15～30 μ m are preferable.

In addition, the thickness of

resin sheet

64,65 is respectively 10～100 μ m.

Above-mentioned duplexer 60A is carried out Laser Processing, as shown in figure 38, the taper through hole 61H, 62H, 63H, 64H, the 65H that interconnect respectively with metal forming 61, resist

layer

62,63 and

resin sheet

64,65, respectively according to form as the corresponding pattern of the pattern that is examined electrode of the wafer of checking object, thus, be formed on the taper through hole 60H that runs through on the thickness direction of duplexer 60A.

Then duplexer 60A being implemented electroless plating handles, as shown in figure 39, form the thin metal layer 66 of easily erosion property, cover the through hole 60H of duplexer 60A internal face, be the internal face of through hole 62H, 63H of the internal face of through hole 61H of metal forming 61 and resist layer 62,63 and the internal face of resin sheet 64,65 surfaces and through hole 64H, 65H, from resist layer 62,63, peel off resin sheet 64,65 then.Then for duplexer 60A, metal forming 61 and thin metal layer 66 as electrode, are implemented metallide and handled, depositing metal in through hole 62H, the 63H of the through hole 61H of metal forming 61 and resist layer 62,63, its result as shown in figure 40, forms the electrode structure body and function pillar 32P of taper.Then, both ends of the surface to resist layer 62,63 surfaces and electrode structure body and function pillar 32P are carried out milled processed, peel off a resist layer 62 from the one side of metal forming 61 then, electrode structure body and function pillar 32P is implemented electroless plating to be handled, as shown in figure 41, the whole surface of the part that the one side of the metal forming 61 from electrode structure body and function pillar 32P is outstanding is obtained complex 60 thus by the state that easy erosion property thin metal layer 66 covers.

In above-mentioned, duplexer 60A goes up the diameter of the through hole 60H that forms, sets according to the 32b of backplate portion of the electrode assembly 32 that should form and the diameter of the 32c of short circuit portion.

Constitute the easy erosion metal material of thin metal layer 66, can use copper etc.

The thickness of

thin metal layer

66,32b of backplate portion in the diameter of the through hole 60H of consideration duplexer 60A and the electrode assembly 32 that should form and the diameter of the 32c of short circuit portion wait to be set.

Then, as shown in figure 42, go up formation resist layer 67 on the surface of insulativity sheet 31 (below among the figure), then, as shown in figure 43, the complex 60 of manufacturing is set on insulativity sheet 31 back sides, and the thin metal layer 66 that forms on each front end face of its electrode structure body and function pillar 32P contacts with these insulativity sheet 31 back sides.Under this state, for example utilize complex 60 extruding insulation sheet 31 on thickness direction, thus, utilization has formed each electrode structure body and function pillar 32P of thin metal layer 66, insulativity sheet 31 and resist layer 67 are bored a hole, thus, as shown in figure 44, form a plurality of through hole 31H on the insulativity sheet 31, insert electrode assembly pillar 32P in each through hole 31H simultaneously.Then, carry out milled processed to being formed on the lip-deep thin metal layer 66 of resist layer 67 surfaces and electrode structure body and function pillar 32P, as shown in figure 45, the front end face that exposes electrode structure body and function pillar 32P, front end face to this electrode structure body and function pillar 32P carries out the plating processing, as shown in figure 46, form the surface electrode 32a of sheet, the electrode assembly that backplate 32b constituted 32 of the taper that form the surface electrode 32a of the sheet that forms as one by the 32c of short circuit portion of taper, with short circuit portion 32c one end thus, forms as one with the 32c of the short circuit portion other end continuously.

As above-mentioned, behind the formation electrode assembly 32, on metal forming 61 and insulativity sheet 31, remove resist

layer

63,67 respectively, thus, as shown in figure 47, expose metal forming 61 and thin metal layer 66.Implement etch processes then, remove metal forming 61 and thin metal layer 66, obtain sheet probe shown in Figure 36 30 thus.

(6) in the probe of the present invention, as shown in figure 48, the anisotropic conductive connector can have elastic anisotropy conducting film 23A, the structure of this elastic anisotropy conducting film 23A is: contain the electroconductive particle P with magnetic in elastomer, electroconductive particle P with magnetic arranges, forms chain on thickness direction, and is disperse state at the chain that is formed by this electroconductive particle P under this state on the face direction.In addition, on the sheet probe 30 anisotropic conductive elastomeric sheets 29 can be set.The structure of above-mentioned anisotropic conductive elastomeric sheets 29 can be: contain the electroconductive particle P with magnetic in elastomer, electroconductive particle P with magnetic arranges, forms chain on thickness direction, and under this state, the chain that is formed by this electroconductive particle P is disperse state on the face direction.

(7) in the wafer inspector, as Figure 49 and shown in Figure 50, can be provided with: anisotropic conductive connector 70, it has 75, one anisotropic conductive elastomeric sheets 75 of anisotropic conductive elastomeric sheets of arranging along its length on overlength frame shape support 71 that forms a plurality of openings 72 and each opening 72 that is arranged on support 71 and is arranged on as between the wafer 6 and probe 30 of checking object; Travel mechanism 76 is used to make this anisotropic conductive connector 70 to move on its length direction.

Material as constituting support 71 can use resin material, its object lesson such as, aqueous polymkeric substance, polyimide resin, vibrin, amide resin, Nomex resin etc.

The structure of anisotropic conductive elastomeric sheets 75 can be: contain the electroconductive particle with magnetic in elastomer, chain is arranged, formed to electroconductive particle with magnetic on thickness direction, and under this state, the chain that is formed by this electroconductive particle is disperse state on the face direction.

Travel mechanism 76 can have winding roller 77 and take up roll 78.

Wafer inspector according to said structure, when repeating the inspection of wafer, when the anisotropic conductive elastomeric sheets 75 in the anisotropic conductive connector 70 breaks down, move anisotropic conductive connector 70 by travel mechanism 76, the anisotropic conductive elastomeric sheets 75 of this fault can be easily and is exchanged for other anisotropic conductive elastomeric sheets 75 in this anisotropic conductive connector 70 in short time, so can improve the checking efficiency of wafer.

(8) make in the wafer inspector controller 2 with check the connector 4 that is electrically connected with circuit substrate 11, be not limited to connector shown in Figure 22, can use various structures.

Claims

1. sheet probe for wafer inspection has:

The insulativity sheet, according to be formed with a plurality of through holes that on thickness direction, extend respectively as the corresponding pattern of the pattern that is examined electrode in all or part of integrated circuit that forms on the wafer of checking object; And

Electrode assembly is arranged in each through hole of this insulativity sheet, and is outstanding from the two sides of this insulativity sheet respectively, it is characterized in that:

Each above-mentioned electrode assembly, by expose from above-mentioned insulativity sheet surface, diameter greater than the surface electrode portion of the through hole face side opening diameter of this insulativity sheet with expose from this insulativity sheet back side, diameter is connected by the short circuit portion that inserts logical this insulativity sheet through hole greater than the backplate portion of the through hole rear side opening diameter of this insulativity sheet and constitutes, with respect to this insulativity sheet, can on its thickness direction, move.

2. a wafer inspection probe member is characterized in that, has described sheet probe for wafer inspection of claim 1 and the anisotropic conductive connector that is arranged on this sheet probe for wafer inspection back side.

3. wafer inspection probe has:

According to as the corresponding pattern of the pattern that is examined electrode in all or part of integrated circuit that forms on the wafer of checking object, be formed with the inspection circuit substrate of a plurality of inspections from the teeth outwards with electrodes;

Be arranged on this inspection lip-deep anisotropic conductive connector of circuit substrate; And

Be arranged on the sheet probe for wafer inspection on this anisotropic conductive connector,

It is characterized in that above-mentioned sheet probe for wafer inspection has:

Form the insulativity sheet of a plurality of through holes that on thickness direction, extend respectively according to the pattern corresponding with the above-mentioned pattern that is examined electrode; And

Be arranged in each through hole of this insulativity sheet, respectively from the outstanding electrode assembly in the two sides of this insulativity sheet, and

Each above-mentioned electrode assembly, by expose from above-mentioned insulativity sheet surface, diameter greater than the surface electrode portion of the through hole face side opening diameter of this insulativity sheet with expose from this insulativity sheet back side, diameter is connected by the short circuit portion that inserts logical this insulativity sheet through hole greater than the backplate portion of the through hole rear side opening diameter of this insulativity sheet and constitutes, this insulativity sheet can move on its thickness direction relatively.

4. wafer inspection probe according to claim 3 is characterized in that, the distance that electrode assembly can move on insulativity sheet thickness direction is 5～50 μ m.

5. according to claim 3 or 4 described wafer inspection probe, it is characterized in that the insulativity sheet is 3 * 10 by coefficient of linear thermal expansion ^-5The following material of/K constitutes.

6. according to each described wafer inspection probe in the claim 3 to 5, it is characterized in that,

The anisotropic conductive connector has: with as forming the frame plate that the electrode zone that is examined electrode is formed with a plurality of openings accordingly in all or part of integrated circuit that forms on the wafer of checking object; With a plurality of elastic anisotropy conducting films that are provided with in the mode of blocking this frame plate opening and are supported,

This elastic anisotropy conducting film has: according to above-mentioned electrode zone in be examined corresponding connection conductive part pattern setting, that in elastomer, contain electroconductive particle of pattern of electrode with magnetic; With the insulation division that constitutes by elastomer that makes their mutually insulateds.

7. wafer inspector, to be formed on each of a plurality of integrated circuit on the wafer, the electric-examination of carrying out this integrated circuit under wafer state is looked into,

It is characterized in that having each described wafer inspection probe in the claim 3 to 6.